WO2011101361A1 - Mélangeur de gaz pour dépôt en phase vapeur - Google Patents

Mélangeur de gaz pour dépôt en phase vapeur Download PDF

Info

Publication number
WO2011101361A1
WO2011101361A1 PCT/EP2011/052258 EP2011052258W WO2011101361A1 WO 2011101361 A1 WO2011101361 A1 WO 2011101361A1 EP 2011052258 W EP2011052258 W EP 2011052258W WO 2011101361 A1 WO2011101361 A1 WO 2011101361A1
Authority
WO
WIPO (PCT)
Prior art keywords
flow
mixing device
carrier gas
inlet channel
gas stream
Prior art date
Application number
PCT/EP2011/052258
Other languages
German (de)
English (en)
Inventor
Markus Gersdorff
Baskar Pagadala Gopi
Martin Kunat
Original Assignee
Aixtron Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron Se filed Critical Aixtron Se
Publication of WO2011101361A1 publication Critical patent/WO2011101361A1/fr

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512Premixing before introduction in the reaction chamber

Definitions

  • the invention relates to a device for homogenizing a vaporized aerosol and a device for depositing a polymer layer on a substrate with an injector for introducing small polymer particles in a carrier gas stream, with an evaporator in which the polymer particles are evaporated, and with a deposition device for depositing the Help the carrier gas flow in the deposition device transported polymer vapor as a polymer layer on a substrate.
  • DE 10 2008 026 974 A1 describes an apparatus for depositing polymeric para-xylylenes on a substrate.
  • the device has an evaporator unit with which a first, in particular solid starting material in the form of a polymer, for example a dimer, is evaporated in a carrier gas stream.
  • the vaporized in the heated evaporator dimer is fed to a downstream of the evaporator heatable separation chamber.
  • the dimer is decomposed into a monomer.
  • the monomer is brought from the carrier gas into a deposition chamber downstream of the separation chamber in the direction of flow, in which it flows through a gas inlet member into a process chamber.
  • the process chamber is located on a susceptor, a substrate which is cooled, so that the gaseous monomer can be deposited there to a polymer.
  • EP 1 095 169 B1 describes a brush dispenser for producing an aerosol.
  • the brush dispenser has a storage chamber in which a solid to be pulverized is located. This solid can also consist of compressed powder. By means of a punch, the solid is against the pressed rotating bristles of a brush wheel. The bristles dissolve matter particles from the front side of the solid and convey them into a gas stream.
  • the bristles are not arranged homogeneously in the circumferential direction of the bristle wheel, for example a different length and individual bristles also have different stiffnesses, their removal action is uneven. This has the consequence that different particle concentrations are brought into the carrier gas flow in succession. These particles are decomposed in a subsequent evaporator or vaporized into the gas phase. The then purely gaseous material flow then has different concentrations over time, that is, it is temporally inhomogeneous.
  • GB 1 356 040 describes a method for applying optical layers to a lens, wherein vaporized starting materials in a mixer are to mix with each other.
  • the mixer has meandering arranged gas conducting means.
  • US 2004/0089235 Al describes a mixing chamber for mixing gases.
  • the gases enter into different mixing ports in a mixing chamber, where they mix in a turbulent gas flow with each other.
  • DE 10 2008 017 076 B3, DE 10 2008 034 330 A1, DE 10 2008 026 974 A1, DE 100 64 178 A1, DE 30 35 992 A1, US 6,244,575 B1, US 2006/0137608 A1, US 5,256,060, US 4,874,634, EP 0 452 006 A2, JP 04318174A describe CVD devices in which a plurality of process gases are used, which are introduced separately from one another into a process chamber where there is a susceptor on which a layer is deposited whose constituents are connected to the Process gases are introduced into the process chamber. There, the process gases may mix in a portion of the process chamber upstream of the susceptor.
  • US 5,381,605 describes a source of an organometallic compound.
  • US 5,186,120, EP 1 132 504 A1 and JP 06116743A1 describe CVD coating devices in which the process gases are fed separately from one another to a mixing chamber which has a substantially tubular shape. The gases mixed in the mixing chamber are directed into a process chamber.
  • the invention has for its object to provide a gas flow with improved temporal homogeneity in a generic device.
  • the invention provides a mixing device which is connected in line with the evaporator and which is downstream of the evaporator in the flow direction.
  • a previously placed in a gas stream aerosol in the form of solid particles or liquid droplets is evaporated.
  • the required heat of vaporization can be removed from the gas stream. But it can also be supplied from the outside by means of a heater.
  • the mixing device according to the invention thus enters a Sieggas- ström, which carries the evaporated matter particles. Since the aerosol intake solution in the carrier gas stream has inhomogeneities, which are due to the design of the aerosol generator, the carrier gas flow carries time varying concentrations of the vaporized aerosol.
  • This temporally inhomogeneous gas stream is brought in the device according to the invention through a uniform inlet channel into the mixing device. He also emerges through a uniform outlet channel from the mixing device out again.
  • the gas stream entering the mixing device through the inlet channel which is preferably a single inlet channel, is divided into different partial streams.
  • the partial flows are not separated from each other by baffles or other conducting means, but form a laminar, ie vortex-free flow profile.
  • the gas stream entering through the inlet channel is fanned out such that in the form of a layered gas stream a multiplicity of partial streams is formed which have different lengths within the mixing device and which flow through the mixing device in dwell times different from one another.
  • the laminar streams flow through the mixer along different paths. Volume elements, which simultaneously enter through the inlet channel into the mixing device and which flow through the mixing device along different paths, thus emerge from the preferably single outlet channel at different times
  • Blender out On the other hand, there are also volume elements that enter the mixing device at different times through the inlet channel, which flow through the mixing device in such different ways that they emerge from the outlet channel at the same time. Thus, measures are provided that a temporal mixing of the entering into the inlet channel gas flow takes place.
  • the sub-streams are formed by the adjacent layers of laminar flow having different flow lengths and flow rates.
  • the mixing device is preferably formed by a hollow body.
  • the housing of the hollow body is preferably cylindrical.
  • the two End faces of the hollow cylinder preferably have a circular base crack.
  • the inlet channel or the outlet channel is in each case in the center of the cover plates.
  • the housing is preferably rotationally symmetrical. It can thus also have the shape of an ellipsoid, a sphere or a cone.
  • Within the hollow body is a deflection for the in the
  • Hollow body inflowing gas stream In the simplest case, this is a baffle plate, which is provided immediately before the mouth of the inlet channel within the housing. It may be a circular disk-shaped plate, against whose center the gas flow occurs. The gas flow is diverted approximately at right angles, widening, slowing down and forming a laminar flow within the mixer housing. It forms a first streamline, which is closest to the center of the housing. The volume elements transported along this streamline have the shortest residence time within the mixer. It also forms a second, along the housing wall extending streamline, which is the longest
  • Streamline is.
  • the volume elements transported along the streamline through the mixer have the largest residence time within the mixer housing.
  • a multiplicity of streamlines lying between these two streamlines form, along which volume elements of the gas flow at different flow rates.
  • At the same time in the mixer entering volume elements thus reach the outlet channel from the mixer housing at different times.
  • the mixer according to the invention thus homogenization of a gas stream can be realized.
  • the formation of the aerosol can be done with an injector. For example, a powder is introduced into a carrier gas stream with a brush injector. This can be diluted in a diluent downstream of the injector. The thinner is an evaporator, for example.
  • the matter particles are a dimer, for example a para-xylylene dimer
  • the temperature within the Evaporator can also be adjusted so that the dimer is decomposed in the evaporator to a monomer.
  • This monomer can then be fed in particular via heated supply lines to a gas inlet member of a deposition device. It flows there through the gas inlet member, which has the shape of a shower head, into a process chamber. The ceiling of the process chamber is formed by the said shower head.
  • the carrier gas flows with the gaseous monomer in the process chamber.
  • the bottom of the process chamber is formed by a, in particular water-cooled susceptor. At least one substrate is located on the susceptor. On the substrate surface, a polymer is deposited. The deposition process can be done in the low pressure range.
  • the device thus preferably comprises an aerosol injector, with which solid or liquid matter particles are introduced into a carrier gas stream, and an evaporation device with which these, in particular, organic matter particles are vaporized, this steam being supplied as an inhomogeneous gas stream through a line to the mixing device.
  • FIG. 1 is a schematic representation of the overall device
  • FIG. 2 shows the injector unit with a thinner designed as a flow divider
  • FIG. the evaporation unit with a mixing device and a valve
  • FIG. 4 is a perspective view of the mixing device and Fig. 5 shows the operation of the mixing device.
  • the coating device for a layer consisting of an organic material, in particular for para-xylylene consists of an aerosol generator 1 and an evaporation unit 6, 7 downstream of it, a five / two-way valve 8 arranged downstream of this evaporation unit, and a deposition apparatus with a process chamber 9 and a gas inlet member 10, a susceptor 11, on which a substrate 12 can be placed to coat it.
  • a carrier gas 13 is mass flow controlled in a mass flow controller 3 and transported to an injector 2.
  • a reservoir 4 of the injector 2 is a solid, which is injected into the injector 2 in powder form in the gas stream.
  • an inert gas such as hydrogen or nitrogen injected solid state aerosol is fed to a flow divider 5, in which a large proportion of the injected powder is deposited again.
  • the branched off from the gas flow powder accumulates in a collecting container 14.
  • a subset of the aerosol is branched off from the input aerosol stream, so that an output gas stream is formed, which has a reduced particle density.
  • This gas stream is passed from the flow divider 5 in an evaporator 6.
  • the heated tube has a length of about 100cm.
  • the tube is heated to a temperature that not only allows the solid particles to evaporate, but also causes a partial decomposition of the vaporized solid.
  • the thus evaporated and optionally also decomposed solid-state aerosol is then passed into a mixer 7.
  • the mixer 7 is a lateral mixer in which the gas stream is fanned out into individual flow paths which have a different length. Consequently, different volume elements of the gas stream which have entered the mixer substantially simultaneously have a different residence time within the mixer.
  • a laminar flow with differently long flow paths preferably forms.
  • a homogenization of the gas flow takes place.
  • the volume elements entering the mixer at the same time move on different paths through the mixer housing and reach the outlet channel 31 of the mixer at different times.
  • the gas stream emerging from the mixer 7 enters a valve arrangement 8.
  • a first gas flow 27 flows in as a "run gas stream". This gas stream may already transport another vaporized polymer or other vaporized feedstock.
  • the gas flow 27 emerges as gas flow 27 'out of the valve arrangement 8 again.
  • a second gas stream 15, a "vent gas stream” enters, which also passes through the valve 8 and exits through a line 15 'again. Only the line 27 'is connected to a deposition device.
  • the deposition apparatus has a housing, a gas inlet member 10 disposed in the housing, and a susceptor 11 disposed below the gas inlet member 10 and capable of supporting one or more substrates 12 to be coated.
  • the gas inlet member 10 may have gas inlet openings arranged over a large area and thus be designed in the form of a shower head.
  • the susceptor 11 may have a support surface facing the gas inlet opening, onto which a substrate can be placed. The support surface can be formed by a cooling block, which is cooled, for example, with cooling water.
  • FIG. 2 schematically shows the injector 2, which is embodied as a brush dispenser, as described in principle by EP 1 095 169 B1.
  • a reservoir 4 in the form of a tube in which a solid 25 is located.
  • the solid 25 may be a pressed powder. It can also be a loose powder.
  • the solid 25 is pressed by means of a punch 26 against a peripheral region of the brush wheel 24.
  • the bristles of the brush wheel 24 carry from the end face of the solid 25 matter particles in the form of a powder. This powder is transported by the rotation of the brush wheel 24 in the carrier gas stream 13, which flows on the opposite side relative to the solid body 25 on the brush wheel 24.
  • the solid-state aerosol thus produced enters the diluter 5 through the supply line 17.
  • the diluent is capable of continuously diverting a subset of the aerosol stream flowing into the diluent 5. It thus acts as a current divider with respect to the powder injected into the carrier gas stream.
  • the flow divider 5 has a housing 23 which is gas-tight.
  • the housing 23 has on its underside a removable collecting container 14.
  • the supply line 17 In the housing 23 projects the supply line 17, which ends to form an outlet opening 16.
  • the supply line 17 extends through an opening of a flange plate, which closes the opening of a Genzousearmes. Transverse to this, in the horizontal direction extending housing arm extends a vertical housing arm.
  • a nozzle 20 In the flow direction behind the outlet opening 16 is a nozzle 20 which is connected to a discharge line 19.
  • Supply line 17 and discharge 19 are formed by tubes which are aligned with each other.
  • the discharge line 90 also extends through a closure cap, which closes an opening of a housing arm. This, in the horizontal direction extending housing arm is aligned with the supply line 17 associated housing arms.
  • the inlet nozzle 10 is located approximately in the middle of the vertical housing arm.
  • the nozzle 20 is formed by a conical nozzle body whose tip forms an inlet opening 18 of about one millimeter in diameter.
  • the edge of the inlet opening 18 is sharp-edged.
  • the opening area of the inlet opening 18 is at least a factor of ten smaller than the opening area of the outlet opening 16.
  • the nozzle 20 is located approximately centrally above the collecting container 14. Above the edge of the collecting container 14 is a substantially circular disk-shaped baffle plate 21, through the center of which Derivative 19 runs.
  • the baffle plate is thus set back in the flow direction with respect to the inlet opening 18.
  • the nozzle body of the nozzle 20 is plugged onto the end of the tube 19 forming the discharge line 19, which has substantially the same diameter as the tube forming the outlet opening 16 and forming the feed line 17.
  • the nozzle body 20 may be fastened by means of a grub screw on the tube outer wall.
  • the tip of the nozzle body is directed to the center of the inlet opening 16.
  • the operation of the flow divider 5 is the following:
  • the aerosol generated by the injector 2 is conveyed by means of the carrier gas 13 through the feed line 17 into the housing 23 of the diluent. It emerges from the outlet opening 16 of the feed line 17 and widens within the housing. see this.
  • the aerosol is conveyed against the inlet opening 18. Only a small number of the particles of matter emerging from the outlet opening 16 enter directly into the inlet opening 18. The majority of the matter particles flows around the nozzle 20 and against the baffle plate 21. The gas flow is widened and slows down. Since a total pressure of less than ten millibars prevails within the housing 23, the particles of matter transported past the nozzle 20 can settle to a large extent in the collecting container 14. A residual portion of the non-settled matter particles flows together with the carrier gas flow through the inlet opening 18 into the discharge line 19.
  • the flow divider 5 can thus reduce the aerosol concentration in a carrier gas, without changing the mass flow of the carrier gas, since the flow divider 5 is flowed through in the preferred embodiment of the total carrier gas.
  • FIG. 3 shows the tubular evaporator 6, which is arranged downstream of the current divider 5 in the current direction.
  • the jacket of the tubular evaporator is heated by a heater.
  • the aerosol flowing into the evaporator 6 is thereby vaporized.
  • the temperature of the evaporator 6 is preferably chosen so that after the evaporation of the aerosol and a decomposition of the aerosol takes place.
  • the mixer 7 arranged downstream of the evaporator 6 in the flow direction has a cylinder symmetry (compare FIG. 4), wherein the supply line 30 and the discharge line 31 lie in the cylinder axis 36 (see also FIG. 5).
  • the cylindrical body has two parallel cylindrical disks, each having an opening in the center. One opening forms the supply line 30 and the opening of the other plate, the discharge line 31.
  • the cylindrical cavity of the mixer 7 is bounded by a curved Umf angswand.
  • Within the cylindrical housing 35 there is a deflecting plate 28 arranged in the center in front of the mouth of the inlet channel 30. The gas stream entering through the inlet channel 30 in the radial direction relative to the axis 36 is discharged at the deflecting plate 28 in the radial direction.
  • a substantially laminar flow is formed. It forms a short streamline 34, which has the smallest radial distance from the axis 36. A multiplicity of further flow lines 33 extending further from the innermost streamline 34 and having a greater length than the innermost streamline 34 are formed. An outermost streamline 32 has the greatest length.
  • This mixer 7 is advantageous because manufacturing tolerances or the like on the brush wheel 24 time-varying particle concentrations are injected into the gas stream 13. This temporal inhomogeneity is compensated in the mixer 7.
  • the housing of the mixer 7 may be made of stainless steel.
  • the deflection plate 28 can be fastened to the housing wall opposite the inlet channel 30 by means of support rods 29. It is also possible to model the side of the deflection plate 28 facing the inlet channel 30 or the side of the deflection plate 28 facing the outlet channel 31 in a streamlined manner, in particular in order to avoid the formation of vertebrae. But it is also provided on the other hand, within the housing 35, the baffle 28 or more deflection Arrange plates so that deliberately create vortexes, since such vortex unfold a memory function and thus contribute to the homogenization.
  • the gas flow flowing in through the inlet channel 30 is thus fanned out into flow paths along which the gas molecules pass through the mixing chamber of the mixer 7 in a different residence time.

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne un dispositif d'homogénéisation d'un aérosol vaporisé, qui comprend un injecteur (2) pour l'introduction de petites particules de matière dans un gaz vecteur (13), un évaporateur (6) connecté par canalisation à l'injecteur (2), dans lequel les particules de matière transportées par le gaz vecteur (13) dans l'évaporateur (6) s'évaporent, et un dispositif de mélange (7) connecté par canalisation à l'évaporateur (6), dispositif de mélange dans lequel le courant de gaz vecteur transportant les particules de matière vaporisées est réparti en courants partiels laminaires qui traversent le dispositif de mélange le long de parcours différents les uns des autres, en des temps de séjour différents.
PCT/EP2011/052258 2010-02-19 2011-02-16 Mélangeur de gaz pour dépôt en phase vapeur WO2011101361A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010000479.0 2010-02-19
DE102010000479A DE102010000479A1 (de) 2010-02-19 2010-02-19 Vorrichtung zur Homogenisierung eines verdampften Aerosols sowie Vorrichtung zum Abscheiden einer organischen Schicht auf einem Substrat mit einer derartigen Homogenisierungseinrichtung

Publications (1)

Publication Number Publication Date
WO2011101361A1 true WO2011101361A1 (fr) 2011-08-25

Family

ID=43902991

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2011/052258 WO2011101361A1 (fr) 2010-02-19 2011-02-16 Mélangeur de gaz pour dépôt en phase vapeur

Country Status (3)

Country Link
DE (1) DE102010000479A1 (fr)
TW (1) TW201139710A (fr)
WO (1) WO2011101361A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114105679A (zh) * 2021-11-25 2022-03-01 西安鑫垚陶瓷复合材料有限公司 化学气相渗透导流设备及利用其制备陶瓷复材管件的方法

Citations (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1356040A (en) 1970-12-09 1974-06-12 Mettler Instrumente Ag Methods of producing thin uniform optical layers on substrates
DE3035992A1 (de) 1980-09-24 1982-05-19 The University of Delaware, Newark, Del. Verfahren und vorrichtung zum auftragen von materialien durch aufdampfen
JPS62278273A (ja) * 1986-05-26 1987-12-03 Nec Corp プラズマcvd装置
DE3802732A1 (de) 1987-01-31 1988-08-11 Toyoda Gosei Kk Verfahren und vorrichtung zur zuechtung von galliumnitrid aus der gasphase
US4874634A (en) 1987-04-16 1989-10-17 U.S. Philips Corp. Vapor phase deposition of cadmium and mercury telluride for electronic device manufacture
EP0452006A2 (fr) 1990-03-30 1991-10-16 Atsushi Ogura Film composite et procédé de sa production
JPH04318174A (ja) 1991-04-18 1992-11-09 Hitachi Electron Eng Co Ltd Teosガス供給装置
US5186120A (en) 1989-03-22 1993-02-16 Mitsubishi Denki Kabushiki Kaisha Mixture thin film forming apparatus
US5256060A (en) 1992-01-28 1993-10-26 Digital Equipment Corporation Reducing gas recirculation in thermal processing furnace
JPH06116743A (ja) 1992-10-02 1994-04-26 Vacuum Metallurgical Co Ltd ガス・デポジション法による微粒子膜の形成法およびその形成装置
US5381605A (en) 1993-01-08 1995-01-17 Photonics Research Incorporated Method and apparatus for delivering gas
JPH11329116A (ja) * 1998-05-13 1999-11-30 Fujikura Ltd 酸化物超電導導体の製造装置および製造方法
US6244575B1 (en) 1996-10-02 2001-06-12 Micron Technology, Inc. Method and apparatus for vaporizing liquid precursors and system for using same
US20010019747A1 (en) * 1997-09-29 2001-09-06 Affinito John D. Plasma enhanced chemical deposition with low vapor pressure compounds
EP1132504A1 (fr) 2000-02-28 2001-09-12 Horiba, Ltd. Procédé et appareillage pour le dépôt des couches minces, analyseur de gaz du type FT-IR, ainsi que dispositif pour fournir un mélange de gaz dans un tel procédé de dépôt
DE10064178A1 (de) 1999-12-24 2001-09-20 Murata Manufacturing Co Verfahren und Vorrichtung zur Ausbildung einer Dünnschicht
EP1095169B1 (fr) 1998-06-15 2002-05-02 Siemens Aktiengesellschaft Procede et dispositif pour la production d'un aerosol pulverulent, ainsi que son utilisation
JP2003239072A (ja) * 2002-02-14 2003-08-27 Ulvac Japan Ltd 成膜装置
US20040089235A1 (en) 2001-12-03 2004-05-13 Takakazu Yamada Mixer, and device and method for manufacturing thin-film
US20060137608A1 (en) 2004-12-28 2006-06-29 Choi Seung W Atomic layer deposition apparatus
US20090186479A1 (en) * 2008-01-18 2009-07-23 Tokyo Electron Limited Semiconductor processing system including vaporizer and method for using same
DE102008017076B3 (de) 2008-04-01 2009-09-03 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Chemisches Dampfabscheide-Verfahren unter Atmosphärendruck zur Herstellung einer n-halbleitenden Metallsulfid-Dünnschicht
DE102008026974A1 (de) 2008-06-03 2009-12-10 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden dünner Schichten aus polymeren Para-Xylylene oder substituiertem Para-Xylylene
DE102008034330A1 (de) 2008-07-23 2010-01-28 Ionbond Ag Olten CVD-Reaktor zur Abscheidung von Schichten aus einem Reaktionsgasgemisch auf Werkstücken

Patent Citations (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1356040A (en) 1970-12-09 1974-06-12 Mettler Instrumente Ag Methods of producing thin uniform optical layers on substrates
DE3035992A1 (de) 1980-09-24 1982-05-19 The University of Delaware, Newark, Del. Verfahren und vorrichtung zum auftragen von materialien durch aufdampfen
JPS62278273A (ja) * 1986-05-26 1987-12-03 Nec Corp プラズマcvd装置
DE3802732A1 (de) 1987-01-31 1988-08-11 Toyoda Gosei Kk Verfahren und vorrichtung zur zuechtung von galliumnitrid aus der gasphase
US4874634A (en) 1987-04-16 1989-10-17 U.S. Philips Corp. Vapor phase deposition of cadmium and mercury telluride for electronic device manufacture
US5186120A (en) 1989-03-22 1993-02-16 Mitsubishi Denki Kabushiki Kaisha Mixture thin film forming apparatus
EP0452006A2 (fr) 1990-03-30 1991-10-16 Atsushi Ogura Film composite et procédé de sa production
JPH04318174A (ja) 1991-04-18 1992-11-09 Hitachi Electron Eng Co Ltd Teosガス供給装置
US5256060A (en) 1992-01-28 1993-10-26 Digital Equipment Corporation Reducing gas recirculation in thermal processing furnace
JPH06116743A (ja) 1992-10-02 1994-04-26 Vacuum Metallurgical Co Ltd ガス・デポジション法による微粒子膜の形成法およびその形成装置
US5381605A (en) 1993-01-08 1995-01-17 Photonics Research Incorporated Method and apparatus for delivering gas
US6244575B1 (en) 1996-10-02 2001-06-12 Micron Technology, Inc. Method and apparatus for vaporizing liquid precursors and system for using same
US20010019747A1 (en) * 1997-09-29 2001-09-06 Affinito John D. Plasma enhanced chemical deposition with low vapor pressure compounds
JPH11329116A (ja) * 1998-05-13 1999-11-30 Fujikura Ltd 酸化物超電導導体の製造装置および製造方法
EP1095169B1 (fr) 1998-06-15 2002-05-02 Siemens Aktiengesellschaft Procede et dispositif pour la production d'un aerosol pulverulent, ainsi que son utilisation
DE10064178A1 (de) 1999-12-24 2001-09-20 Murata Manufacturing Co Verfahren und Vorrichtung zur Ausbildung einer Dünnschicht
EP1132504A1 (fr) 2000-02-28 2001-09-12 Horiba, Ltd. Procédé et appareillage pour le dépôt des couches minces, analyseur de gaz du type FT-IR, ainsi que dispositif pour fournir un mélange de gaz dans un tel procédé de dépôt
US20040089235A1 (en) 2001-12-03 2004-05-13 Takakazu Yamada Mixer, and device and method for manufacturing thin-film
JP2003239072A (ja) * 2002-02-14 2003-08-27 Ulvac Japan Ltd 成膜装置
US20060137608A1 (en) 2004-12-28 2006-06-29 Choi Seung W Atomic layer deposition apparatus
US20090186479A1 (en) * 2008-01-18 2009-07-23 Tokyo Electron Limited Semiconductor processing system including vaporizer and method for using same
DE102008017076B3 (de) 2008-04-01 2009-09-03 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Chemisches Dampfabscheide-Verfahren unter Atmosphärendruck zur Herstellung einer n-halbleitenden Metallsulfid-Dünnschicht
DE102008026974A1 (de) 2008-06-03 2009-12-10 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden dünner Schichten aus polymeren Para-Xylylene oder substituiertem Para-Xylylene
DE102008034330A1 (de) 2008-07-23 2010-01-28 Ionbond Ag Olten CVD-Reaktor zur Abscheidung von Schichten aus einem Reaktionsgasgemisch auf Werkstücken

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MOERMAN I: "INFLUENCE OF GAS MIXING ON THE LATERAL UNIFORMITY IN HORIZONTAL MOVPE REACTORS", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 107, no. 1 / 04, 1 January 1991 (1991-01-01), pages 175 - 180, XP000246592, ISSN: 0022-0248, DOI: DOI:10.1016/0022-0248(91)90452-B *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114105679A (zh) * 2021-11-25 2022-03-01 西安鑫垚陶瓷复合材料有限公司 化学气相渗透导流设备及利用其制备陶瓷复材管件的方法

Also Published As

Publication number Publication date
DE102010000479A1 (de) 2011-08-25
TW201139710A (en) 2011-11-16

Similar Documents

Publication Publication Date Title
US20230416921A1 (en) Method and apparatus for atmospheric pressure plasma jet coating deposition on a substrate
EP1325177B1 (fr) Procede pour deposer notamment des couches cristallines, dispositif d'entree de gaz et dispositif pour mettre ledit procede en oeuvre
EP2173388B1 (fr) Évaporateur pour la stérilisation de récipients en matière plastique
DE102014106523A1 (de) Vorrichtung und Verfahren zum Versorgen einer CVD- oder PVD-Beschichtungseinrichtung mit einem Prozessgasgemisch
EP0698418A2 (fr) Procédé et dispositif de dispersion et pulvérisation simultanées d'au moins deux fluides
EP1322801A1 (fr) Organe d'entree de gaz destine a un procede et a un dispositif de depot chimique en phase vapeur
DE102011076806A1 (de) Vorrichtung und Verfahren zur Erzeugung eines kalten, homogenen Plasmas unter Atmosphärendruckbedingungen
DE202007019184U1 (de) Vorrichtung zur Behandlung oder Beschichtung von Oberflächen
DE60129175T2 (de) Verfahren und System zur Zerstäubung einer Flüssigkeit
DE102006019643B4 (de) Vorrichtung zur pneumatischen, tribostatischen Pulverbeschichtung von Werkstücken
DE102015121253A1 (de) Vorrichtung zum Erzeugen eines atmosphärischen Plasmastrahls zur Behandlung der Oberfläche eines Werkstücks
DE102011051263A1 (de) Vorrichtung zur Aerosolerzeugung und Abscheiden einer lichtemittierenden Schicht
DE102006026576A1 (de) Vorrichtung und Verfahren zum Aufdampfen eines pulverförmigen organischen Ausgangsstoffs
EP1364076B1 (fr) Procede et dispositif pour alimenter un reacteur de depot chimique en phase vapeur en materiau de base, passe de la phase liquide a la phase gazeuse
DE102012220986B4 (de) Dosiereinheit und ihre Verwendung
EP2407181A1 (fr) Evaporateur pour stérilisation de récipients en matière plastique
WO2011101361A1 (fr) Mélangeur de gaz pour dépôt en phase vapeur
DE102010000388A1 (de) Gaseinlassorgan mit Prallplattenanordnung
EP1777070A2 (fr) Appareil de poudrage de substrats, en particulier de substrats imprimés
DE102007055936B4 (de) Aerosolerzeugerdüse, Aerosolerzeugersystem, Beschichtungssystem und Verfahren
EP4063016A1 (fr) Buse d'atomiseur
EP1186347A1 (fr) Procédé et dispositif de pulvérisation de liquides
DE102010000480A1 (de) Vorrichtung zum Abscheiden einer organischen Schicht, insbesondere einer Polymerschicht mit einem Aerosolerzeuger sowie ein hierzu geeigneter Aerosolerzeuger
DE102011054208A1 (de) Verteiler für Aerosol
DE102019105163B3 (de) Plasmadüse und Plasmavorrichtung

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11706499

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 11706499

Country of ref document: EP

Kind code of ref document: A1