WO2011096244A1 - Procédé de fabrication de substrat électroconducteur transparent, substrat électroconducteur transparent obtenu, et élément d'afficheur - Google Patents

Procédé de fabrication de substrat électroconducteur transparent, substrat électroconducteur transparent obtenu, et élément d'afficheur Download PDF

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Publication number
WO2011096244A1
WO2011096244A1 PCT/JP2011/050229 JP2011050229W WO2011096244A1 WO 2011096244 A1 WO2011096244 A1 WO 2011096244A1 JP 2011050229 W JP2011050229 W JP 2011050229W WO 2011096244 A1 WO2011096244 A1 WO 2011096244A1
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transparent
electrode
substrate
digging
transparent conductive
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PCT/JP2011/050229
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English (en)
Japanese (ja)
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雄也 平尾
真和 岡田
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コニカミノルタホールディングス株式会社
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Priority to JP2011527128A priority Critical patent/JP4883249B2/ja
Publication of WO2011096244A1 publication Critical patent/WO2011096244A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/153—Constructional details
    • G02F1/155—Electrodes

Definitions

  • the present invention relates to a method for producing a transparent conductive substrate, a transparent conductive substrate, and a display element.
  • ITO indium tin oxide
  • Patent Document 1 discloses that when a transparent electrode is provided on the transparent substrate via an insulating film, a linear metal low resistance electrode is provided on the transparent substrate. A method of providing and electrically connecting the low resistance electrode to a transparent electrode through a through hole formed in an insulating film is disclosed.
  • Patent Document 2 discloses a method in which a metal electrode is formed by a plating method, and then a transparent resin material is applied and filled between the metal electrodes, and a transparent conductive film is laminated on the metal electrode. A method of filling the resin composition and covering the auxiliary electrode with the resin composition is disclosed.
  • a transparent conductive film is formed on a transparent substrate, a pattern made of a transparent insulating material is formed on the transparent conductive film, and an exposed portion of the transparent conductive film is selectively formed by electroplating.
  • a method of forming a metal film is disclosed.
  • an insulating film is formed by filling an insulating material between low resistance electrodes after forming a low resistance electrode on a transparent substrate.
  • an insulating film tends to be interposed between the low-resistance electrode and the transparent conductive film, and there is a problem that the resistance reduction is prevented.
  • Patent Document 2 in the case of using an insulating material as the transparent resin material, an insulating material is interposed between the metal electrode and the transparent conductive film, as in Patent Document 1. This may hinder the reduction in resistance.
  • the method using the resin composition having conductivity cannot ensure the flatness of the surface of the resin composition, and the resin composition and the transparent conductive film may be cut off at the raised portion corresponding to the edge portion of the metal electrode. .
  • the transparent conductive substrate is used for an electrochemical display element with the resin composition and the transparent conductive film cut, the electrolyte of the electrochemical display element penetrates into the transparent conductive substrate and corrodes the metal electrode. Cause problems.
  • a transparent conductive film is further formed on the transparent insulating material and the metal film after the electroplating step. Need to form.
  • the transparent conductive film acting as an electrode for electroplating there is a problem that unevenness in thickness occurs in the plated metal film, resulting in uneven display density and poor contact with the transparent conductive film.
  • the present invention has been made in view of the above problems, and a method for manufacturing a transparent conductive substrate capable of manufacturing a highly reliable transparent conductive substrate without complicating the manufacturing process and increasing the price, It is an object of the present invention to provide a transparent conductive substrate manufactured by the manufacturing method and a display element using the same.
  • the object of the present invention can be achieved by the following configuration.
  • a recess forming step of forming a recess on the surface of the transparent substrate A metal film forming step of forming a metal film on the surface of the transparent substrate including the recess; Leaving the metal in the recess, removing the metal film formed on the surface of the transparent substrate by chemical mechanical polishing, forming a digging electrode with the metal in the recess, An insulating film forming step of forming an insulating film covering an edge portion of the digging electrode on the surface of the transparent substrate; A transparent electrode forming step of forming a transparent electrode electrically connected to the digging electrode on a side of the transparent substrate on which the digging electrode and the insulating film are formed; Of manufacturing a conductive substrate.
  • the manufacturing method of a highly reliable transparent conductive substrate, the transparent conductive substrate manufactured by the manufacturing method, and a display using the same, without causing the complexity and high price of a manufacturing process are caused.
  • An element can be provided.
  • FIG. 1A and 1B are schematic views showing the configuration of the transparent conductive substrate in the first embodiment.
  • FIG. 1A is a plan view
  • FIG. 1B is a cross-sectional view taken along the line ABC in FIG. FIG.
  • a transparent conductive substrate used as a common substrate common to each display pixel of the display element will be described as an example.
  • a transparent conductive substrate 100 includes a digging electrode 105 formed by filling a concave portion 103 formed in a lattice shape on a transparent substrate 101 with a metal, and a digging electrode 105.
  • the insulating film 107 to be covered and the transparent electrode 111 formed so as to cover the insulating film 107 are provided on the entire surface of the transparent substrate 101 on the side where the digging electrode 105 and the insulating film 107 are formed.
  • the digging electrode 105 and the transparent electrode 111 are electrically connected via a contact hole (opening) 109 formed in the insulating film 107.
  • the digging electrode 105 has a lattice shape so as to surround each pixel P when the transparent conductive substrate 100 is used as a display element, and a metal film is formed on the entire surface of the transparent substrate 101 including the recess 103.
  • the metal film other than the recess 103 is formed by a method of removing by chemical mechanical polishing. By this method, as shown in FIG. 1B, a metal electrode having a large aspect ratio can be realized, and both high aperture ratio and low resistance can be achieved.
  • the digging electrode 105 is polished slightly lower than the transparent substrate 101 due to the characteristics of chemical mechanical polishing, there is a slight step between the digging electrode 105 and the transparent substrate 101.
  • the insulating film 107 does not have to cover the entire surface of the digging electrode 105, and at least the edge portion of the digging electrode 105 on the surface of the transparent substrate 101 as in the contact hole 109 on the right side of FIG. That is, the boundary portion between the transparent substrate 101 and the digging electrode 105 may be covered. Instead of covering only the digging electrode 105, the entire surface of the transparent substrate 101 on the side where the digging electrode 105 is formed may be covered except for the contact hole 109. However, in this case, the insulating film 107 needs to be transparent.
  • the portion of the digging electrode 105 that extends vertically in FIG. 1A is entirely covered with the insulating film 107 in the width direction (left side of FIG. 1B). 1) A part of the portion of the digging electrode 105 that extends laterally in FIG. 1A is covered only with the insulating film 107 so that the contact hole 109 is provided at the center in the width direction (FIG. 1). 1b) right side).
  • the transparent electrode 111 is formed directly on the side of the transparent substrate 101 where the digging electrode 105 is formed without providing the insulating film 107, the transparent electrode 111 at the upper part of the edge portion of the digging electrode 105 may be cracked. There is a possibility that the electrolyte of the display element enters the crack and the electrode is corroded.
  • the cause of this crack is that there is a slight step between the surface of the transparent substrate 101 and the digging electrode 105 as described above, the end of the stepped portion is very sharp, the transparent substrate 101, digging. This is because strains concentrate on the transparent electrode 111 at the upper part of the edge portion of the digging electrode 105 due to a temperature change or the like because the thermal expansion coefficients of the materials of the burying electrode 105 and the transparent electrode 111 are different.
  • the sharp portion at the end of the step portion of the transparent substrate 101 can be covered and loosened, so that the transparent electrode 111 is cracked. Can be prevented.
  • the step between the digging electrode 105 and the transparent substrate 101 is preferably 1 ⁇ m or less. If the level difference is larger than 1 ⁇ m, even if the insulating film 107 is provided at the edge portion between the transparent substrate 101 and the digging electrode 105, it may not be possible to completely prevent the transparent electrode 111 and the insulating film 107 from cracking. is there.
  • the contact hole 109 is partially provided in the horizontal portion of the grid of the digging electrode 105, but is provided in the vertical portion or intersection of the digging electrode 105. Alternatively, it may be provided over the entire circumference of the grating.
  • FIG. 2A and 2B are schematic views showing the configuration of the transparent conductive substrate in the second embodiment.
  • FIG. 2A is a plan view
  • FIG. 2B is a cross-sectional view taken along the line ABC in FIG. FIG.
  • the second embodiment is different from the first embodiment in that a filter layer 113 is formed under the transparent electrode 111. Except for the filter layer 113, the second embodiment is the same as the first embodiment, and a description thereof will be omitted.
  • the filter layer 113 is, for example, a color filter of each color of red (R), green (G), and blue (B), and is formed in a region surrounded by the insulating film 107 under the transparent electrode 111.
  • the insulating film 107 can be used as a partition layer in a filter formation region called a bank layer when the filter layer 113 is formed, and can contribute to omission of steps and cost reduction.
  • the recessed portion formed in the transparent substrate is filled with metal to form the digging electrode, and the transparent electrode is formed on the edge portion of the digging electrode covered with the insulating film.
  • the digging electrode and the transparent electrode are electrically connected through a contact hole formed in the insulating film, it is possible to prevent the digging electrode from being corroded while achieving both high aperture ratio and low resistance. It is possible to provide a transparent conductive substrate and a display element that are high in image quality and highly reliable.
  • FIG. 3 is a process diagram showing a flow of a manufacturing method of a transparent conductive substrate
  • FIGS. 4 to 6 are schematic cross-sectional views showing states in each process of FIG. 4 to 6 are cross-sectional views taken along the line ABC in FIG. 2A.
  • the second embodiment having the filter layer 113 is used.
  • the manufacturing method will be described.
  • the manufacturing method of the first embodiment is different only in that the filter layer 113 is not formed.
  • Process S1 This is a step of forming the recess 103 in the transparent substrate 101.
  • a resist 151 is applied on the transparent substrate 101, and an opening pattern 153 is formed at a position where the concave portion 103 of the transparent substrate 101 is formed, for example, by photolithography.
  • a method for forming the opening pattern 153 known methods such as a screen printing method, an ink jet coating method, and a flexographic printing method may be used in addition to the photolithography method.
  • a hard material used for an electronic device such as soda lime glass, non-alkali glass, or quartz, or a material made of a flexible plastic can be used.
  • plastic material examples include polyethylene terephthalate (PET), triacetyl cellulose (TAC), cellulose acetate propionate (CAP), polycarbonate (PC), polyethersulfone (PES), polyethylene naphthalate (PEN), and polyimide. (PI) or the like can be used, and in order to enhance the characteristics of the substrate composed of these plastic materials, it is preferable to use a surface whose surface is subjected to a known surface coating or surface treatment.
  • PET polyethylene terephthalate
  • TAC triacetyl cellulose
  • CAP cellulose acetate propionate
  • PC polycarbonate
  • PES polyethersulfone
  • PEN polyethylene naphthalate
  • PI polyimide.
  • a recess 103 is formed in the transparent substrate 101 through the opening pattern 153 by, for example, an etching method.
  • the resist 151 is peeled off, and the transparent substrate 101 having the recess 103 is completed. This state is shown in FIG.
  • Step S3 This is a step of forming a metal film 157 on the surface of the transparent substrate 101 where the recess 103 is formed.
  • a method for forming the metal film in addition to the sputtering method, many methods such as a vacuum deposition method, an electroless plating method, and an electroplating method can be applied, and these methods may be combined. For example, a method of forming a base film by a sputtering method and increasing the thickness by an electroplating method can be used.
  • examples of the material for the metal film 157 include Au, Pt, Ag, Al, and alloys thereof.
  • Process S5 digging electrode formation process
  • the metal film 157 is polished to form the digging electrode 105.
  • the metal film 157 formed on the transparent substrate 101 is polished by a chemical mechanical polishing method, and the metal film 157 is left only in the concave portion 103 of the transparent substrate 101, whereby the digging electrode 105 made of metal inside the concave portion 103 is formed. It is formed. This state is shown in FIG. By polishing until the height of the surface of the formed digging electrode 105 is slightly lower than the height of the surface of the transparent substrate 101, the metal film 157 other than the inside of the recess 103 can be completely removed.
  • the transparent substrate 101 that is an object to be polished is held by a member called a carrier, and pressed against a flat plate (lap) with a polishing cloth or a polishing pad, depending on the material of the metal film 157.
  • polishing is performed by relatively moving the transparent substrate 101 and the flat plate while flowing a slurry containing various chemical components and hard fine abrasive grains.
  • Step S7 This is a step of forming the insulating film 107 covering the digging electrode 105 and the contact hole 109.
  • a photosensitive resin film is formed on the side of the transparent substrate 101 where the digging electrode 105 is formed, and exposure and development are performed using a photolithography method, whereby the insulating film 107 and the contact hole 109 are formed simultaneously.
  • This state is shown in FIG.
  • the inclination angle of the end portion of the insulating film 107 with respect to the transparent substrate 101 is much gentler than that shown in the figure, and the transparent electrode 111 is replaced with the insulating film 107 and the transparent substrate in step S11 (transparent electrode forming step) described later. Even if formed on 101, the transparent electrode 111 does not crack at the end of the insulating film 107.
  • a method of forming the insulating film 107 and the contact hole 109 there is a method of directly printing a resin in a desired shape by using, for example, an ink jet method in addition to the photolithography method.
  • a material for the insulating film 107 an organic material such as acrylic resin, silicone, or fluorine, or an inorganic material such as SiO 2 or SiN X can be used, but a highly transparent material is desirable.
  • Step S9 filter layer forming step
  • the filter layer 113 is formed on the transparent substrate 101. In the case of the first embodiment, this step may be omitted.
  • the filter layer 113 is formed by directly printing a filter resin on the transparent substrate 101 where the insulating film 107 is not formed, for example, by an inkjet method. This state is shown in FIG. At this time, the insulating film 107 can be used as a partition layer of a filter formation region called a bank layer, and it is not necessary to provide a separate bank layer, which can contribute to omission of steps and cost reduction.
  • a film is formed by coating a photosensitive filter resin using a spin coating method or the like, and exposure and development are performed using a photolithography method to form the filter layer 113.
  • Various methods such as a method, a method in which a photosensitive filter resin is formed into a film, laminated on the transparent substrate 101, and exposed to light and developed using a photolithography method to form the filter layer 113 can be used.
  • Step S11 transparent electrode forming step
  • the transparent electrode 111 is formed.
  • ITO indium tin oxide
  • the transparent electrode 111 is formed on the entire surface of the transparent substrate 101 on which the insulating film 107, the contact hole 109, and the filter layer 113 are formed, for example, by sputtering, and the transparent electrode 111 is formed.
  • the digging electrode 105 and the transparent electrode 111 are electrically connected by the material of the transparent electrode 111 that has entered the contact hole 109. This state is shown in FIG.
  • the transparent electrode 111 is made of a transparent inorganic oxide such as fluorine-doped tin oxide (FTO), zinc oxide (ZnO), indium zinc oxide (IZO), and amorphous oxide semiconductor (IGZO). It can be formed by forming a film using a sputtering method, a vacuum deposition method, or the like.
  • a transparent conductive polymer typified by polystyrene sulfonate-doped polyethylene dioxythiophene (PEDOT / PSS) can be formed using various wet coating methods such as spin coating.
  • the transparent conductive substrate 100 is formed through the above steps.
  • step S1 recessed portion forming step
  • the recessed portion 103 is formed on the transparent substrate 101 by an etching method, but the recessed portion 103 can be formed by other methods.
  • FIG. 6 is a schematic cross-sectional view for explaining another method for forming the recess. Here, a method of forming the recess 103 using the nanoimprint method will be described.
  • a transparent ultraviolet (UV) curable resin layer 101b is formed on a transparent base plate 101a such as polyethersulfone (PES) by, for example, a coating method.
  • the base plate 101a and the UV curable resin layer 101b are combined to form a transparent substrate 101.
  • a pressing die 161 having a convex portion 163 at a position where the concave portion 103 is formed is prepared.
  • the convex portion 163 of the pressing die 161 is embossed by the UV curable resin layer 101b, and the shape of the convex portion 163 is transferred to the UV curable resin layer 101b.
  • the UV curable resin layer 101 b is irradiated with ultraviolet rays UV, and the UV curable resin layer 101 b is cured, thereby forming a recess 103 in the transparent substrate 101. Is done. Also by such a method, the recess 103 can be formed in the transparent substrate 101.
  • a highly reliable transparent conductive substrate can be achieved while achieving both high aperture ratio and low resistance without complicating the manufacturing process and increasing the cost.
  • a manufacturing method can be provided.
  • FIG. 7 is a schematic diagram for explaining the shape of the digging electrode 105.
  • the digging electrode 105 has a lattice shape surrounding the periphery of each pixel P when the transparent conductive substrate 100 is used as a display element.
  • the digging electrode 105 may be thinned and provided.
  • the digging electrodes 105 may be arranged in a grid so as to surround a plurality of (in this case, four) pixels P.
  • the digging electrode 105 is striped for each horizontal row or vertical column of the pixel P, or for each of a plurality of horizontal rows or a plurality of vertical columns (here, every two horizontal rows). You may arrange in a shape.
  • the pixel P when the transparent conductive substrate 100 is used as a display element is obtained.
  • the aperture ratio can be increased, contributing to higher image quality. Even if the wiring area is reduced, the digging electrode 105 has a large aspect ratio and a low resistance, so that an increase in wiring resistance does not cause a problem.
  • the thickness of the filter layer 113 is preferably 1 ⁇ m or less. In the actual color filter, the thickness is about 0.1 ⁇ m, and the thickness is not such that the transparent substrate 101 is cracked.
  • the insulating film 107 may be provided also in a portion between the filter layers 113 where the digging electrode 105 is thinned out, for example, a D portion in FIG. Thereby, the step between the filter layers 113 can be filled, and distortion of the transparent electrode 111 can be prevented.
  • FIG. 8 is a circuit block diagram illustrating a configuration of the display element in this embodiment.
  • an ED element an electrodeposition type electrochemical display element ED
  • ECD elements electrochromic electrochemical display elements
  • the display element 1 includes pixels Pjk (j and k are positive integers) arranged in a two-dimensional matrix of m rows and n columns (m and n are positive integers), 1 ⁇ j ⁇ m, ⁇ k ⁇ n), a vertical scanning circuit 31 that performs vertical scanning of m rows, a horizontal scanning circuit 21 that performs horizontal scanning of n columns, a power supply Vdd that supplies a driving voltage for the pixel Pjk, and a common that supplies a common potential for the pixel Pjk It consists of a power supply Vcom and the like.
  • four pixels P11, P12, P21, and P22 are illustrated.
  • the vertical scanning circuit 31 sequentially controls the vertical scanning lines Gj (1 ⁇ j ⁇ m) to an active state (for example, high potential) based on a vertical drive signal Sg supplied from the outside in order to drive the display element 1.
  • the horizontal scanning circuit 21 sequentially controls the horizontal scanning lines Sk (1 ⁇ k ⁇ n) to an active state (for example, a high potential) based on a horizontal drive signal Ss supplied from the outside to drive the display element 1. .
  • the pixel Pjk is composed of two thin film transistors TFT, a selection transistor Q1 and a drive transistor Q2, and an ED element ED.
  • the ED element ED is configured by sealing an electrolyte solution 301 as a display material between a pixel electrode 211 provided for each pixel and a transparent electrode 111 common to all pixels (see FIG. 9).
  • the transparent electrode 111 is connected to a common power source Vcom.
  • the two thin film transistors Q1 and Q2 have a so-called active matrix type configuration.
  • the gate GA1 is connected to the vertical scanning line Gj
  • the source SO1 is connected to the horizontal scanning line Sk
  • the drain D1 is connected to the gate GA2 of the driving transistor Q2.
  • the source SO2 is connected to the power supply Vdd
  • the drain D2 is connected to the pixel electrode 211 of the ED element ED.
  • the horizontal scanning line Sk is activated, so that the driving transistor Q2 of the pixel Pjk is on.
  • the pixel electrode 211 is connected to the power supply Vdd via the driving transistor Q2.
  • a positive or negative voltage is selectively applied between the pixel electrode 211 and the transparent electrode 111, whereby a silver oxidation-reduction reaction is performed on the surfaces of both electrodes, and the surface of the transparent electrode 111.
  • a state in which reduced black silver is present and a transparent state in the oxidized state are reversibly switched, and display is performed on the pixel Pjk.
  • FIG. 9 is a schematic cross-sectional view showing the configuration of the pixel in the display element shown in FIG. Here, a cross section of one pixel of the pixel Pjk is shown. The cross section is cut in the same way as the cross section ABC shown in FIG.
  • the display element 1 includes a common substrate (transparent conductive substrate) 100 that is a substrate on the viewing side of the display element 1, a pixel electrode substrate (counter substrate) 200 that faces the common substrate 100, and the common substrate 100 and pixel electrodes. It is comprised with the electrolyte solution 301 etc. which were enclosed between the board
  • FIG. The end of the display element 1 is sealed with a sealant (not shown) provided between the common substrate 100 and the pixel electrode substrate 200. Note that the pixel electrode 211 of the ED element ED is provided in the pixel electrode substrate 200.
  • the transparent conductive substrate of the first embodiment shown in FIG. 1 is used. If the filter layer 113 is necessary for color display or the like, the transparent conductive substrate of the second embodiment shown in FIG. 2 may be used.
  • the transparent electrode 111 of the common substrate 100 is disposed so as to face the electrolytic solution 301.
  • the pixel electrode substrate 200 includes a substrate 201, a pixel electrode 211, a porous layer 207, two thin film transistors TFT including a selection transistor Q1 and a drive transistor Q2, and the like.
  • a transparent substrate material such as glass or polyethylene terephthalate (PET) can be used, and since it is not necessarily transparent, a substrate material such as stainless foil or polyimide can also be used.
  • PET polyethylene terephthalate
  • the pixel electrode 211 constituting the ED element ED is preferably a chemically stable metal electrode such as a silver electrode or a silver palladium electrode, and is formed as a part of the pixel electrode substrate 200.
  • the two thin film transistors TFT are ordinary bottom-gate thin film transistors, and have an active matrix type configuration as shown in FIG.
  • gates GA1 and GA2 are formed on a substrate 201, and gates GA1 and GA2 are covered with a gate insulating film 203, and then sources SO1, SO2, drains D1, D2 and semiconductor layers SC1, SC2 are formed.
  • the A pixel electrode 211 is formed on the sources SO1, SO2, drains D1, D2 and the semiconductor layers SC1, SC2 covered with the interlayer insulating film 205.
  • the top of the pixel electrode 211 is covered with a porous layer 207.
  • the porous layer 207 is a layer used for protecting the pixel electrode 211 and improving the whiteness at the time of white display. For example, fine particles such as TiO 2 and ZnO are made porous by using a binder such as a water-soluble polymer material. Layer.
  • silver or a compound containing silver in the chemical structure for example, a compound such as silver oxide, silver sulfide, metallic silver, silver colloidal particles, silver halide, silver complex compound, silver ion, or the like is used.
  • a spacer for maintaining the thickness of the electrolyte solution 301 may be mixed in the electrolyte solution 301.
  • the spacer for example, a fine sphere made of glass, acrylic resin, silica, or the like used for a liquid crystal display or the like can be used.
  • metal oxide fine particles such as TiO 2 and ZnO may be dispersed in the electrolytic solution 301 instead of the porous layer 207.
  • the configuration using the transparent conductive substrate of FIG. 1 as the common substrate 100 of the display element 1 is shown, but the same configuration can be used as the pixel electrode substrate 200.
  • the transparent electrode 111 is divided and formed as a pixel electrode for each pixel, an active matrix type thin film transistor TFT is formed under the transparent electrode 111, for example, and the transparent electrode 111 and the digging electrode 105 are interposed via the thin film transistor TFT. To be connected.
  • the resistance value of the transparent conductive substrate can be reduced using a thin digging electrode, the occurrence of display unevenness due to the resistance value can be prevented even if the display area is increased,
  • the aperture ratio can also be increased, contributing to improvement in display quality.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)

Abstract

La présente invention concerne, d'une part un substrat électroconducteur transparent doté d'une haute qualité d'image et d'une fiabilité élevée, d'autre part un procédé de fabrication de ce substrat électroconducteur transparent, et enfin un élément d'afficheur. Pour éviter la corrosion des électrodes encastrées, tout en obtenant une ouverture relative élevée et une faible résistance, l'invention consiste, d'abord à combler de métal les creux formés dans le substrat transparent pour constituer les électrodes encastrées, ensuite à recouvrir d'un film isolant au moins les zones des bordures entre le substrat transparent et les électrodes encastrées, et enfin à former une électrode transparente.
PCT/JP2011/050229 2010-02-08 2011-01-08 Procédé de fabrication de substrat électroconducteur transparent, substrat électroconducteur transparent obtenu, et élément d'afficheur WO2011096244A1 (fr)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104320909A (zh) * 2014-10-27 2015-01-28 皆利士多层线路版(中山)有限公司 高阶梯铜电路板及其制作方法
JP2016509359A (ja) * 2013-03-08 2016-03-24 サン−ゴバン グラス フランス Ｏｌｅｄ用導電性支持体、これを組み込んだｏｌｅｄ、及びその製造
TWI610112B (zh) * 2012-09-17 2018-01-01 友達光電股份有限公司 顯示面板及其製作方法
WO2020149113A1 (fr) * 2019-01-17 2020-07-23 Ｊｘｔｇエネルギー株式会社 Film électroconducteur transparent

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TWI610112B (zh) * 2012-09-17 2018-01-01 友達光電股份有限公司 顯示面板及其製作方法
JP2016509359A (ja) * 2013-03-08 2016-03-24 サン−ゴバン グラス フランス Ｏｌｅｄ用導電性支持体、これを組み込んだｏｌｅｄ、及びその製造
US10181566B2 (en) 2013-03-08 2019-01-15 Saint-Gobain Glass France Electrically conductive OLED carrier, OLED incorporating said carrier, and its manufacture
CN104320909A (zh) * 2014-10-27 2015-01-28 皆利士多层线路版(中山)有限公司 高阶梯铜电路板及其制作方法
WO2020149113A1 (fr) * 2019-01-17 2020-07-23 Ｊｘｔｇエネルギー株式会社 Film électroconducteur transparent

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