WO2011065507A1 - Capteur de détection d'humidité - Google Patents

Capteur de détection d'humidité Download PDF

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Publication number
WO2011065507A1
WO2011065507A1 PCT/JP2010/071175 JP2010071175W WO2011065507A1 WO 2011065507 A1 WO2011065507 A1 WO 2011065507A1 JP 2010071175 W JP2010071175 W JP 2010071175W WO 2011065507 A1 WO2011065507 A1 WO 2011065507A1
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WO
WIPO (PCT)
Prior art keywords
humidity
region
moisture sensitive
sensitive film
detection sensor
Prior art date
Application number
PCT/JP2010/071175
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English (en)
Japanese (ja)
Inventor
澄人 森田
聡 和賀
崇 佐藤
英紀 牛膓
Original Assignee
アルプス電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アルプス電気株式会社 filed Critical アルプス電気株式会社
Priority to JP2011543336A priority Critical patent/JP5470512B2/ja
Priority to CN201080040905.1A priority patent/CN102549416B/zh
Publication of WO2011065507A1 publication Critical patent/WO2011065507A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
    • G01N27/223—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity
    • G01N27/225—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity by using hygroscopic materials

Definitions

  • the present invention relates to a humidity detection sensor using a polymer moisture sensitive film as a dielectric.
  • Humidity detection sensors used for humidity change measurement include capacitive humidity detection sensors in which a polymer moisture sensitive film whose dielectric constant changes according to the amount of absorbed or released water is used as a dielectric.
  • the capacitive humidity detection sensor includes a sensor unit whose capacitance changes in accordance with the humidity, and a reference unit which holds a constant capacitance regardless of the humidity, and it is between the sensor unit and the reference unit. Convert the capacity difference into a voltage and output it.
  • the sensor unit and the reference unit have a laminated structure formed by sandwiching a polymer moisture sensitive film between a pair of electrodes and laminating a protective layer thereon. As such a humidity detection sensor, there is, for example, one described in Patent Document 1.
  • the polymer moisture sensitive film is exposed to expose the polymer moisture sensitive film of the sensor portion to the outside. It is necessary to partially remove the electrode formed above. In this case, it is conceivable to remove the electrode layer by dry etching such as milling after the electrode layer is formed on the polymer moisture sensitive film.
  • the sensitivity of the humidity detection sensor may vary.
  • the present invention has been made in view of the foregoing, and it is an object of the present invention to provide a parallel plate type humidity detection sensor free from variations in sensitivity.
  • the humidity detection sensor includes a substrate and a polymer moisture sensitive film provided on the substrate and having a dielectric constant that changes in accordance with the humidity sandwiched between a pair of electrodes, and the polymer moisture sensitive film is partially A sensor unit having a humidity sensitive region exposed to the outside, and a protective layer formed on at least the upper electrode of the pair of electrodes, wherein the pair of electrodes are in a region other than the humidity sensitive region. And a region having a polymer moisture sensitive film having a thickness substantially the same as the thickness of the polymer moisture sensitive film sandwiched therebetween, in the vicinity of the upper electrode.
  • the region having the polymeric moisture sensitive film having substantially the same thickness as the thickness of the polymeric moisture sensitive film sandwiched by the pair of electrodes is provided. It is possible to secure a path of a leaked electric field when an electric field is applied between the upper electrode and the lower electrode in the moisture sensitive film. As a result, the variation in sensitivity of the humidity detection sensor can be reduced.
  • the width of the region is a width including a leak region of a magnetic field between at least the pair of electrodes.
  • the electrode on the polymer moisture sensitive film is patterned by photolithography and etching.
  • the electrode on the polymer moisture sensitive film is constituted of a seed layer patterned by photolithography and etching, and a plating layer formed on the seed layer. Is preferred.
  • the substrate and the polymer moisture sensitive film provided on the substrate and whose dielectric constant changes according to the humidity are sandwiched between a pair of electrodes, and the polymer moisture sensitive film is a part A sensor portion having a humidity sensitive area exposed to the outside, and a protective layer formed on the upper electrode of at least the pair of electrodes, wherein the pair is formed in an area other than the humidity sensitive area Since a region having a polymer moisture sensitive film having a thickness substantially the same as the thickness of the polymer moisture sensitive film sandwiched between the electrodes is provided in the vicinity of the upper electrode, a parallel plate humidity detection sensor without variation in sensitivity is obtained. It can be realized.
  • FIG. 1 It is a block diagram showing composition of a humidity detection sensor concerning an embodiment of the invention. It is a top view which shows the sensor part and reference part of a humidity detection sensor concerning an embodiment of the invention.
  • (A), (b) is sectional drawing which shows the structure of the area
  • (A) to (e) are cross-sectional views for explaining a method of manufacturing the humidity detection sensor according to the embodiment of the present invention.
  • FIG. 1 is a block diagram showing a configuration of a humidity detection sensor according to an embodiment of the present invention.
  • the humidity detection sensor shown in FIG. 1 is a polymer film humidity sensor using a polymer moisture sensitive material whose dielectric constant changes in accordance with the amount of absorbed or released water.
  • the humidity detection sensor includes a sensor unit 20 having a capacitance C 20 that changes with humidity, a reference unit 30 that holds a constant capacitance C 30 regardless of humidity, and the sensor unit 20.
  • the circuit unit 40 is provided with a connection pad 40 a for connection to an external circuit.
  • An external circuit connected to the humidity detection sensor via the pad 40a detects a humidity change (relative humidity) from the output of the humidity detection sensor (voltage corresponding to the capacitance difference ⁇ C).
  • FIG. 2 is a plan view showing a sensor unit and a reference unit of the humidity detection sensor according to the embodiment of the present invention.
  • the right side is the sensor unit 20 and the left side is the reference unit 30.
  • the sensor unit 20 and the reference unit 30 have a structure in which a lower electrode, a polymer moisture sensitive film 54 and an upper electrode are stacked. That is, the sensor unit 20 and the reference unit 30 have a parallel plate structure in which a polymer moisture sensitive film whose dielectric constant changes according to humidity is sandwiched between a pair of electrodes (lower electrode and upper electrode).
  • the lower electrode 53 is formed on the substrate 51 with the thermal oxide film 52 interposed therebetween.
  • a polymer moisture sensitive film 54 whose dielectric constant changes according to humidity is formed on the lower electrode 53, and an upper electrode 55 is partially formed on the polymer moisture sensitive film 54.
  • a protective layer 56 for protecting the exposed upper electrode 55 is formed.
  • a plurality of openings 54 a for exposing the polymer moisture sensitive film 54 to the outside are formed in the moisture sensitive region A of the upper electrode 55 (a region where the polymer moisture sensitive film 54 is partially exposed to the outside).
  • the protective layer 56 is also provided with a plurality of openings for exposing the polymer moisture sensitive film 54 to the outside.
  • the openings 54a are arranged side by side at predetermined intervals in the left and right and up and down directions, and have a rectangular planar shape.
  • the number, planar shape and formation position of the openings 54a are arbitrary.
  • the present inventors can not remove only the upper electrode 55 if the upper electrode 55 is partially removed in the sensor part by milling, and the polymer moisture sensitive film 54 is also removed. I focused on things.
  • the thickness of the polymer moisture sensitive film 54 in the region (humidity region) where the upper electrode 55 does not exist becomes thin, that is, the polymer sandwiched between the lower electrode 53 and the upper electrode 55
  • the thickness of the moisture sensitive film 54 (the region other than the moisture sensitive region) is different from the thickness of the region where the upper electrode 55 is not present (the moisture sensitive region).
  • the thickness of the polymer moisture sensitive film in the region other than the moisture sensitive region is different from the thickness of the polymer moisture sensitive film in the moisture sensitive region as described above, that is, the polymer moisture sensitive film It has been found that the variation in the thickness of 54 (with the thickness distribution) causes variation in the sensitivity of the humidity detection sensor.
  • the polymer moisture sensitive film is actually scraped in the range of 85 nm to 115 nm in the wafer (the milling distribution is 10% of the total amount of milling) Become).
  • the capacity decreases by 41.2 fF when the polymer moisture sensitive film is scraped by 200 nm in the device design shown in FIG. 2, so the capacity changes by 6.18 fF with a film thickness change of 85 nm to 115 nm. It will be. Since the sensitivity (rate of change of capacitance) of the element is determined with respect to the element capacitance, the variation of 6.18 fF leads directly to the sensitivity variation. For example, when the element capacitance is 200 fF and the capacitance change rate is 20%, the sensitivity is 0.4 fF /%. In addition, when there is no variation in the amount of scraping of the polymer moisture sensitive film, the sensitivity will also be uniform.
  • the present inventors set a region having a polymer moisture sensitive film having substantially the same thickness as the thickness of the polymeric moisture sensitive film sandwiched between the pair of electrodes in the vicinity of the upper electrode.
  • the region that is, by providing a region in which the volume of the polymer moisture sensitive film is secured in the vicinity of the upper electrode, it has been found that the variation in the sensitivity of the humidity detection sensor can be suppressed.
  • the region having the polymeric moisture sensitive film having substantially the same thickness as the thickness of the polymeric moisture sensitive film sandwiched between the pair of electrodes
  • This area B is located near the upper electrode 55 of the area C.
  • the thickness D 3 of polymer humidity-sensitive film 54 is thinner.
  • the width W of the region B is preferably a width including a leakage region of the electric field between at least the pair of electrodes 53 and 55 (a region capable of securing a path of the leakage electric field).
  • the electrode material is patterned by photolithography and etching to form the upper electrode 55.
  • the electrode material is deposited to form a plating seed layer, and the plating seed layer is patterned by photolithography. Thereafter, electroplating is performed using the resist as a frame, and a plating layer is formed on the plating seed layer to form an upper electrode.
  • the plating seed layer protects the plating layer and is removed by etching in a wet process.
  • the lower electrode is formed on the substrate via the thermal oxide film.
  • a polymeric moisture-sensitive film is formed on the lower electrode so as to cover the entire lower electrode.
  • An upper electrode is formed on the polymer moisture sensitive film so as to cover the entire polymer moisture sensitive film.
  • a protective layer is formed on the entire reference portion 30 to protect the exposed upper electrode.
  • a substrate eg, a silicon substrate or the like whose surface is protected by an insulator can be used.
  • a material which comprises the lower electrode 52 and the upper electrode 55 Al, AlCu, Ta, Ti, NiFe, Ni etc. can be used, for example.
  • a material for forming the polymeric moisture sensitive film 54 polyimide or the like which can be easily patterned can be used.
  • the protective layer 56 for example, a silicon nitride (SiNx) film, an SiO 2 film, an Al 2 O 3 / SiO 2 laminated film, an SiO 2 / SiN laminated film, or the like can be used.
  • the lower electrode 21 is provided commonly to the sensor unit 20 and the reference unit 30.
  • a lower electrode wire is drawn out from a substantially middle position between the sensor unit 20 and the reference unit 30, and the lower electrode wire is connected to the electrode pad 40 a of the circuit unit 40.
  • the polymer moisture sensitive film 54 and the upper electrode 55 are separately provided in the sensor unit 20 and the reference unit 30.
  • the upper electrode wiring is provided on the upper electrode 55 to connect the upper electrode 55 and the electrode pad 40 a of the circuit unit 40.
  • the upper electrode wiring is a wiring pattern extending from the pair of upper electrodes 55 with a fixed width, and the width is adjusted so that parasitic capacitances generated in the sensor unit 20 and the reference unit 30 become the same. ing. Thus, it is possible to reduce variations in sensor capacitance C 20 and the reference capacitance C 30 due to parasitic capacitance.
  • the humidity detection sensor having the above configuration detects humidity as follows. First, in the sensor unit 20, the polymer moisture sensitive film 54 is exposed to the outside through the opening 54a in the moisture sensitive region A. For this reason, the amount of moisture absorbed or released in the polymer moisture sensitive film 54 changes in accordance with the humidity (the amount of water) in the atmosphere, and the dielectric constant ⁇ changes. Therefore, the capacitance C 20 between the lower electrode 53 and the upper electrode 55 changes. On the other hand, in the reference portion 30, the polymer moisture sensitive film 54 is not exposed to the outside, so the moisture content in the polymer moisture sensitive film 54 does not change even if the humidity (water content) in the atmosphere changes. Also ⁇ does not change.
  • a constant capacitance C 30 is held between the lower electrode 53 and the upper electrode 55. Then, by obtaining a capacitance difference between the electrostatic capacitance C 30 of the capacitance C 20 and the reference portion 30 of the sensor unit 20 may measure the changed capacitance (difference value) by humidity.
  • the present humidity detection sensor is configured to convert this difference value into a voltage and output it.
  • 4 (a) to 4 (e) are cross-sectional views for explaining the method of manufacturing the humidity detection sensor according to the embodiment of the present invention.
  • the silicon substrate 51 is thermally oxidized to form a thermal oxide film (SiO 2 film) 52.
  • the lower electrode 53 is formed on the thermal oxide film 52. That is, the lower electrode 53 is formed by depositing an electrode material on the entire surface of the silicon substrate 51 having the thermal oxide film 52, forming a resist layer thereon, patterning it as a mask, and etching the electrode material through the mask It forms by doing.
  • the lower electrode 53 is common to the sensor unit 20 and the reference unit 30. When the lower electrode 53 is formed, the wiring conductor of the circuit section 40 and the pad 40a are simultaneously formed.
  • the polymer moisture sensitive film 54 is formed on the lower electrode 53 in the sensor unit 20 and the reference unit 30 so as to cover the lower electrode 53. That is, the polymer moisture sensitive film 54 is formed by applying and curing a polymer material (for example, polyimide) on the entire surface of the silicon substrate 51, forming a resist layer thereon, patterning it as a mask, and using the mask It is formed by etching a polymer material. Alternatively, the polymeric moisture-sensitive film 54 is formed by forming a pattern by photolithography using a photosensitive polymeric material and curing the polymeric material. The polymeric moisture sensitive film 54 is individual in each of the sensor unit 20 and the reference unit 30.
  • a polymer material for example, polyimide
  • the upper electrode 55 is formed on the polymer moisture sensitive film 54 in the sensor unit 20 and the reference unit 30 so as to cover the polymer moisture sensitive film 54. That is, the upper electrode 55 is formed by depositing an electrode material on the entire surface of the silicon substrate 51, forming a resist layer thereon, patterning it as a mask, and etching the electrode material through the mask. Thus, the opening 55 a (width corresponding to the humidity sensitive region A + region B) is formed in the upper electrode 55.
  • the upper electrode 55 is individual in each of the sensor unit 20 and the reference unit 30.
  • the protective layer forming material is deposited on the entire humidity detection sensor to form the protective layer 56 on the sensor unit 20 and the reference unit 30.
  • the openings 56a and 54a are formed by anisotropic etching such as dry etching with the region (region B + region C) other than the moisture sensitive region A masked.
  • the humidity of the present invention having a region B having a thickness D 1 substantially equal thickness D 2 of the polymer humidity-sensitive film 54 of polymer humidity-sensitive film 54 which is sandwiched by a pair of electrodes 53 and 55 A detection sensor can be made.
  • variation in a sensitivity was investigated. The variation in sensitivity was measured by an LCR meter. As a result, the sensitivity variation was 6%, which was very small.
  • a humidity detection sensor was manufactured in the same manner as in the example except that the region B was not present in the vicinity of the upper electrode, that is, the upper electrode was partially removed by milling.
  • variation in a sensitivity was investigated like the Example. As a result, the sensitivity variation was 11%, which was very large.
  • the humidity detection sensor according to the present invention in the area other than the moisture sensitive area, the area having the polymer moisture sensitive film having substantially the same thickness as the thickness of the polymer moisture sensitive film sandwiched between the pair of electrodes. Since it is in the vicinity of the upper electrode, it is possible to secure a path of a leaked electric field when an electric field is applied between the upper electrode and the lower electrode in the polymer moisture sensitive film. As a result, the variation in sensitivity of the humidity detection sensor can be reduced. As described above, according to the present invention, it is possible to realize a parallel plate type humidity detection sensor with no sensitivity variation.
  • the present invention is not limited to the above embodiment, and can be implemented with appropriate modifications.
  • the humidity detection sensor provided with the sensor unit and the reference unit is described, the present invention is not limited to this, and the present invention is similarly applied to a humidity detection sensor composed of only the sensor unit. can do.
  • the materials, the arrangement position of each layer, the thickness, the size, the manufacturing method, and the like in the above-described embodiment can be appropriately changed and implemented.
  • the present invention can be implemented with appropriate modifications without departing from the scope of the present invention.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
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Abstract

L'invention concerne un capteur de détection d'humidité présentant une forme de plaque plate parallèle exempte de variabilité de sensibilité. Le capteur selon l'invention comprend : un substrat (51) ; une unité capteur comprenant une zone de sensibilité à l'humidité (A) dans laquelle un film polymère sensible à l'humidité (54) présentant une constante diélectrique qui varie en fonction de l'humidité est disposé sur le substrat (51) et maintenu entre une paire d'électrodes (53, 55), le film polymère (54) étant partiellement exposé à l'environnement externe ; et une couche protectrice (56) formée au moins sur l'électrode supérieure (55) de la paire d'électrodes. Le capteur de détection d'humidité comporte une zone (C) qui comprend un film polymère sensible à l'humidité (54) d'épaisseur sensiblement identique à celle du film polymère (54) maintenu entre la paire d'électrodes, et qui se trouve à proximité de l'électrode supérieure (55), dans la zone (zone (B) + zone (C)) autre que la zone de sensibilité à l'humidité (A).
PCT/JP2010/071175 2009-11-30 2010-11-26 Capteur de détection d'humidité WO2011065507A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011543336A JP5470512B2 (ja) 2009-11-30 2010-11-26 湿度検出センサ
CN201080040905.1A CN102549416B (zh) 2009-11-30 2010-11-26 湿度检测传感器

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Application Number Priority Date Filing Date Title
JP2009-272427 2009-11-30
JP2009272427 2009-11-30

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WO2011065507A1 true WO2011065507A1 (fr) 2011-06-03

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101532151B1 (ko) * 2013-12-26 2015-06-26 삼성전기주식회사 습도센서 및 그 제조방법
KR101646048B1 (ko) * 2015-02-12 2016-08-08 인하대학교 산학협력단 나뭇잎의 수분을 측정하는 정전용량형 습도센서
JP2016170172A (ja) * 2015-03-10 2016-09-23 国立大学法人信州大学 容量型ガスセンサ及びその製造方法
WO2018062379A1 (fr) * 2016-09-30 2018-04-05 ミツミ電機株式会社 Capteur d'humidité

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9494538B2 (en) * 2014-04-04 2016-11-15 Deere & Company Agricultural moisture sensor with co-planar electrodes
WO2016093343A1 (fr) * 2014-12-11 2016-06-16 北陸電気工業株式会社 Capteur capacitif d'humidité
US10801985B2 (en) * 2016-06-03 2020-10-13 Texas Instruments Incorporated Sensing capacitor with a permeable electrode
JP6770238B2 (ja) * 2017-03-31 2020-10-14 ミツミ電機株式会社 湿度センサ
JP2019176574A (ja) * 2018-03-27 2019-10-10 豊田合成株式会社 トランスデューサー装置

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JPH04276544A (ja) * 1991-03-05 1992-10-01 Nikon Corp 接合型化学センサ
JPH10221288A (ja) * 1997-01-31 1998-08-21 Ngk Spark Plug Co Ltd 湿度センサ
WO2003021246A1 (fr) * 2001-08-31 2003-03-13 Kurabe Industrial Co., Ltd. Capteur d'humidite capacitif et son procede de fabrication
JP2003516538A (ja) * 1999-12-13 2003-05-13 エルジー エレクトロニクス インコーポレーテッド 絶対湿度センサ

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JPH10267874A (ja) * 1997-03-25 1998-10-09 Chichibu Onoda Cement Corp ガス検知装置および空調機器
JP2003156464A (ja) * 2001-11-19 2003-05-30 Denso Corp 容量式湿度センサ
CN1203312C (zh) * 2003-06-12 2005-05-25 东南大学 电容式相对湿度传感器
JP5272344B2 (ja) * 2007-05-08 2013-08-28 セイコーエプソン株式会社 流体噴射ヘッド、流体噴射ヘッドの製造方法、及び流体噴射装置
JPWO2010113711A1 (ja) * 2009-03-31 2012-10-11 アルプス電気株式会社 容量型湿度センサ及びその製造方法

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Publication number Priority date Publication date Assignee Title
JPH04276544A (ja) * 1991-03-05 1992-10-01 Nikon Corp 接合型化学センサ
JPH10221288A (ja) * 1997-01-31 1998-08-21 Ngk Spark Plug Co Ltd 湿度センサ
JP2003516538A (ja) * 1999-12-13 2003-05-13 エルジー エレクトロニクス インコーポレーテッド 絶対湿度センサ
WO2003021246A1 (fr) * 2001-08-31 2003-03-13 Kurabe Industrial Co., Ltd. Capteur d'humidite capacitif et son procede de fabrication

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101532151B1 (ko) * 2013-12-26 2015-06-26 삼성전기주식회사 습도센서 및 그 제조방법
KR101646048B1 (ko) * 2015-02-12 2016-08-08 인하대학교 산학협력단 나뭇잎의 수분을 측정하는 정전용량형 습도센서
JP2016170172A (ja) * 2015-03-10 2016-09-23 国立大学法人信州大学 容量型ガスセンサ及びその製造方法
WO2018062379A1 (fr) * 2016-09-30 2018-04-05 ミツミ電機株式会社 Capteur d'humidité
JPWO2018062379A1 (ja) * 2016-09-30 2019-07-11 ミツミ電機株式会社 湿度センサ
JP2020190567A (ja) * 2016-09-30 2020-11-26 ミネベアミツミ株式会社 湿度センサ
US10948448B2 (en) 2016-09-30 2021-03-16 Minebea Mitsumi Inc. Humidity sensor

Also Published As

Publication number Publication date
JP5470512B2 (ja) 2014-04-16
JPWO2011065507A1 (ja) 2013-04-18
CN102549416A (zh) 2012-07-04
CN102549416B (zh) 2014-03-12

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