WO2016093343A1 - Capteur capacitif d'humidité - Google Patents

Capteur capacitif d'humidité Download PDF

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Publication number
WO2016093343A1
WO2016093343A1 PCT/JP2015/084797 JP2015084797W WO2016093343A1 WO 2016093343 A1 WO2016093343 A1 WO 2016093343A1 JP 2015084797 W JP2015084797 W JP 2015084797W WO 2016093343 A1 WO2016093343 A1 WO 2016093343A1
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WO
WIPO (PCT)
Prior art keywords
electrode
pattern
surrounding
lower electrode
sensitive film
Prior art date
Application number
PCT/JP2015/084797
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English (en)
Japanese (ja)
Inventor
西田 達也
愛子 島田
Original Assignee
北陸電気工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 北陸電気工業株式会社 filed Critical 北陸電気工業株式会社
Priority to JP2016563748A priority Critical patent/JP6611362B2/ja
Priority to CN201580066677.8A priority patent/CN107003262B/zh
Publication of WO2016093343A1 publication Critical patent/WO2016093343A1/fr

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/22Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance

Definitions

  • the present invention relates to a capacitive humidity sensor with low humidity hysteresis.
  • a lower electrode is formed on a substrate, and the moisture sensitivity is formed on the lower electrode.
  • a film is formed, and an upper electrode is formed on the moisture sensitive film.
  • a moisture-impermeable protective film is further formed on the upper electrode.
  • the upper electrode is extended on the substrate for electrical connection with a connection electrode provided on the substrate.
  • An object of the present invention is to provide a capacitive humidity sensor that can prevent intrusion and discharge of excess moisture without forming a moisture-impermeable protective film.
  • another object of the present invention is to provide a capacitive humidity sensor that can prevent the upper electrode from peeling off from the substrate surface.
  • the capacitive humidity sensor according to the present invention includes a lower electrode formed by including an insulating substrate and a base electrode layer formed of a material having good adhesion to the insulating substrate, and a first electrode electrically connected to the lower electrode.
  • the upper electrode pattern is formed so as to cover most of the peripheral edge of the moisture sensitive film pattern.
  • the lower electrode pattern includes a first connection electrode that is electrically connected to the lower electrode. And it has a base electrode layer and is formed in the same structure as the lower electrode pattern, and is formed on an insulating substrate with a gap between the lower electrode and most of the peripheral portion of the lower electrode, and most of the peripheral portion of the lower electrode is formed. It is preferable to further include a surrounding electrode pattern including a surrounding electrode and a second connection electrode electrically connected to the surrounding electrode. In this case, the moisture sensitive film pattern fills the first slit formed between the surrounding electrode and most of the peripheral edge of the lower electrode, and continuously exposes the surrounding electrode along the surrounding electrode.
  • the slit is preferably formed so as to form a slit.
  • the upper electrode pattern is preferably formed so as to fill the second slit.
  • the surrounding electrode is provided under the second slit, and the upper electrode is in close contact with the surrounding electrode and does not come into contact with the insulating substrate. Therefore, it is possible to prevent the upper electrode from peeling off.
  • the upper electrode pattern fills the second slit most of the peripheral portion of the moisture sensitive film pattern is covered with the upper electrode pattern. As a result, moisture absorption and drainage are eliminated from the outer periphery of the moisture sensitive film, and the hysteresis characteristics of the moisture sensitive film are improved.
  • the lower electrode pattern includes a first connection portion that connects between the lower electrode and the first connection electrode, and the width dimension of the first connection portion is shorter than the width dimension of the first connection electrode. It is preferable. Moreover, it is preferable that the surrounding electrode is provided with a pair of extension part extended with a space
  • membrane part utilized for the detection of the humidity formed in the case of providing a 1st connection electrode can be lengthened.
  • the humidity hysteresis characteristic can be further improved.
  • the surrounding electrode pattern preferably includes a connection portion that connects the surrounding electrode and the second connection electrode.
  • the moisture sensitive film pattern covers the first connection portion of the lower electrode pattern, the second connection portion of the surrounding electrode pattern, and the pair of extension portions, and surrounds the first connection electrode and the second connection electrode. It is preferable to be formed so as to cover.
  • the moisture sensitive film pattern covers almost the entire surface of the insulating substrate on which the lower electrode pattern is formed, and the upper electrode does not come into contact with the substrate during film formation, so the upper electrode is peeled off from the substrate. Can be processed without any problems.
  • the base electrode layer of the lower electrode pattern and the surrounding electrode pattern is preferably made of any one of NiCr, Cr, and Ti, and a surface electrode layer made of Au or Pt is preferably formed on the base electrode layer. With such a combination of materials, it is possible to prevent the lower electrode pattern from being peeled off from the substrate surface, and to reliably prevent the upper electrode from being peeled off from the surrounding electrode.
  • the base electrode layer of the lower electrode pattern and the surrounding electrode pattern is made of a thin film made of any one of NiCr, Cr and Ti, and a diffusion prevention layer made of Ta or the like is formed on the base electrode layer by the thin film.
  • a surface electrode layer made of Au or Pt (5000 ⁇ ) is preferably formed on the prevention layer.
  • the cost can be reduced.
  • connection by wire bonding becomes possible.
  • the width dimension of the first slit is preferably 10 to 20 ⁇ m or more, and the width dimension of the second slit is preferably 10 to 20 ⁇ m or more.
  • the lower electrode pattern and the upper electrode pattern are preferably formed of a thin film of 6000 mm or less, and the moisture sensitive film pattern is preferably formed of a thin film of 0.2 to 2 microns.
  • FIG. 1st Embodiment It is a top view of the capacity type humidity sensor of a 1st embodiment of the present invention.
  • (A) and (B) are the AA 'sectional view taken on the line and the BB' sectional view on FIG. (A) thru
  • (A) to (C) are the lower electrode pattern used to form the reference capacitive humidity sensor for temperature compensation with the lower electrode pattern and the surrounding electrode pattern used in the capacitive humidity sensor according to the second embodiment of the present invention. It is a top view of an electrode pattern and a surrounding electrode pattern, a top view of a moisture sensitive film pattern, and a top view of an upper electrode pattern. It is the figure which showed the equivalent circuit of 2nd Embodiment.
  • or (E) are the top view of the lower electrode pattern and surrounding electrode pattern which are used with the capacitive humidity sensor of the 3rd Embodiment of this invention, the figure of a moisture sensitive film pattern, the upper electrode pattern, It is a top view which shows the state which covered the lower electrode pattern with the moisture sensitive film pattern, and the top view which shows the state which formed the upper electrode pattern on the moisture sensitive film pattern which covered the lower electrode pattern.
  • FIG. 1 is a plan view of a capacitive humidity sensor 1 according to a first embodiment of the present invention
  • FIGS. 2A and 2B are cross-sectional views taken along line AA ′ and BB ′ of FIG. 3 (A) to 3 (D) show the lower electrode pattern 3 and the surrounding electrode pattern 5, the moisture sensitive film pattern 7 and the upper electrode pattern 9 respectively used in the embodiment of FIG. Yes. 1 to 3 are prepared for explaining the embodiment, and the dimensions of each part, the number of holes, and the like are different from the actual ones.
  • the capacitive humidity sensor 1 of the present embodiment includes an insulating substrate 2 that is formed of a material such as glass, surface-oxidized silicon wafer, or ceramic and has a smooth surface.
  • a lower electrode pattern 3 and a surrounding electrode pattern 5 are formed on the surface of the insulating substrate 2.
  • the lower electrode pattern 3 includes a lower electrode 31, a first connection electrode 33, and a first connection portion 32 that connects the lower electrode 31 and the first connection electrode 33.
  • the width dimension of the first connection portion 32 is shorter than the width dimension of the first connection electrode 33.
  • the surrounding electrode pattern 5 is formed on the insulating substrate 2 with a gap between the lower electrode 31 and most of the peripheral portion of the lower electrode 31, and surrounds most of the peripheral portion of the lower electrode 31 and the surrounding electrode.
  • a pair of extension portions 54 and 55 extending between the first slit 4 and a first slit 4 to be described later are provided [see FIG. 2B].
  • a first slit 4 is formed between the surrounding electrode 51 and most of the peripheral edge of the lower electrode 31.
  • the lower electrode pattern 3 includes a base electrode layer 3a formed of a material having good adhesion to the surface of the insulating substrate 2, and a diffusion prevention layer 3b formed on the base electrode layer 3a. And a surface electrode layer 3c formed on the diffusion prevention layer 3b.
  • the diffusion preventing layer 3b prevents the base electrode layer 3a and the surface electrode layer 3c from diffusing each other.
  • the surrounding electrode pattern 5 also has the same structure as the lower electrode pattern. Therefore, the lower electrode pattern 3 and the surrounding electrode pattern are simultaneously formed in the same manufacturing process.
  • a thin film layer of any one of NiCr, Cr and Ti is formed in order to form the base electrode layer 3a on the entire surface of the insulating substrate 2 by sputtering or vapor deposition, and Ta is formed in order to form the diffusion prevention layer 3b thereon.
  • a multilayer thin film is formed by forming a thin film layer made of Au, and further forming a thin film layer made of Au or Pt in order to form the surface electrode layer 3c thereon.
  • a resist photosensitive material film
  • pattern exposure is performed to form a positive type.
  • development and rinsing are performed to remove excess resist, and then etching is performed and then the resist is removed to form the base electrode pattern 3.
  • the surrounding electrode pattern 5 is also formed.
  • the moisture sensitive film pattern 7 includes a moisture sensitive film 71 that entirely covers the lower electrode 31.
  • the moisture sensitive film pattern 7 fills the first slit 4 formed between the surrounding electrode 51 and most of the peripheral edge of the lower electrode 31 and continuously exposes the surrounding electrode 51 along the surrounding electrode 51.
  • the second slit 8 to be formed is formed.
  • the moisture sensitive film pattern 7 fills the extension portions 41 and 42 of the first slit 4 extended by the pair of extension portions 54 and 55 and continuously connects the pair of extension portions along the pair of extension portions 54 and 55.
  • the second slit 8 is formed so as to be exposed.
  • the moisture sensitive film pattern 7 further includes a covering portion 72 that covers the second connection portion 52 of the surrounding electrode pattern and covers the periphery of the first connection electrode 33 and the second connection electrode 53. ing.
  • the moisture sensitive film pattern 7 is formed of polyimide. However, even if the moisture sensitive film pattern is formed using polyimide organic compound, cellulose, cellulose organic compound, polyvinyl alcohol (PVA), or the like. Of course it is good.
  • the moisture-sensitive film pattern 7 is formed by forming a polyimide film on the entire surface of the lower electrode pattern of the insulating substrate 2 and etching a predetermined pattern by using a photolithography technique, similarly to the formation of the lower electrode pattern 3. To do.
  • the upper electrode pattern 9 includes an upper electrode 91 that covers the moisture sensitive film 71 so as to be partially exposed.
  • the upper electrode pattern 9 is formed so as to cover most of the peripheral edge of the moisture sensitive film 71 with a thin film of Au or Pt.
  • the upper electrode 91 is formed with a plurality of through holes 10 for allowing moisture to enter and exit the moisture sensitive film 71.
  • the upper electrode pattern 9 is formed so as to fill the second slit 8 of the moisture sensitive film pattern 7. Further, the upper electrode pattern 9 is formed so as to fill the extended portions 81 and 82 of the second slit 8.
  • the surrounding electrode 51 is present under the second slit 8, and the upper electrode 91 is in close contact with the surrounding electrode 51 and does not come into contact with the insulating substrate 2. Therefore, the upper electrode 91 can be prevented from peeling off.
  • the upper electrode pattern 9 fills the second slit 8 and the extended portions 81 and 82 of the second slit 8
  • most of the peripheral portion of the moisture sensitive film 71 is covered with the upper electrode pattern 9. It becomes.
  • moisture absorption and drainage are eliminated from the outer peripheral portion of the moisture sensitive film 71, and the hysteresis characteristic of the moisture sensitive film 71 is improved.
  • FIG. 5 is a diagram showing the results of measuring the humidity hysteresis of the capacitive humidity sensor of the present embodiment and the humidity hysteresis of the capacitive humidity sensor of the conventional structure.
  • the capacitive humidity sensor having the conventional structure has a structure in which the peripheral portion of the moisture sensitive film is not covered by the upper electrode.
  • curve X is the humidity hysteresis of the capacitive humidity sensor having the conventional structure
  • Y is the humidity hysteresis of the capacitive humidity sensor of the present embodiment.
  • FIG. 5 shows a relative difference between the humidity measured by the sensor and the actual humidity when the humidity is increased from 10% to 90%.
  • the upper electrode pattern 9 includes electrode covering portions 92 and 93 that cover the surfaces of the first connection electrode 33 and the second connection electrode 53. When such electrode covering portions 92 and 93 are provided, the wire bonding connection to the connection electrode is improved.
  • the size of the insulating substrate 2 is 5 mm ⁇ 7 mm ⁇ 1 mm.
  • the first connection electrode 33 and the second connection electrode 53 have a size to be an electrode pad for wire bonding.
  • the width dimension of the first slit 4 is 10 to 20 ⁇ m
  • the width dimension of the second slit 8 is 10 to 20 ⁇ m.
  • the lower electrode pattern 3 and the upper electrode pattern 9 are formed with a thin film of 6000 mm or less, and the moisture sensitive film pattern is formed with a thin film of 0.2 ⁇ m to 2 ⁇ m.
  • the diameter of the through hole formed in the upper electrode 71 is 10 ⁇ m.
  • FIGS. 6A to 6C show the lower electrode pattern 13 and the surrounding electrode pattern 15 used in the capacitive humidity sensor according to the second embodiment of the present invention, the moisture sensitive film pattern 17 and the upper electrode pattern 19, respectively.
  • a lower electrode pattern 13 'and an surrounding electrode pattern 15' for forming a reference capacitive humidity sensor for temperature compensation, a moisture sensitive film pattern 17 'and an upper electrode pattern 19' are shown.
  • These patterns are formed by the same method using the same material as each pattern in the first embodiment.
  • FIG. 6 the same reference numerals as those in the first embodiment shown in FIGS. 1 to 4 are added to the reference numerals in FIGS. 1 to 4 by the number of 10 or 100. The detailed description is omitted.
  • constituent elements constituting the reference capacity type humidity sensor are given a dash “′” to the reference numerals used in the capacity type humidity sensor, and detailed description thereof is omitted.
  • the equivalent circuit of the sensor formed by overlapping these patterns is as shown in FIG.
  • C1 is the capacitance of the capacitive humidity sensor
  • C2 is the capacitance of the reference capacitance sensor.
  • the terminal portion T1 corresponds to the first connection electrode 33 in the first embodiment. Therefore, in FIG. 6, reference numeral 133 is added to reference numeral T1.
  • the terminal portion T2 corresponds to the second connection electrode 153 in the first embodiment. Therefore, in FIG. 6, reference numeral 153 is added to reference numeral T21.
  • T3 is a terminal part of the reference capacitive sensor
  • T4 is a terminal part of the surrounding electrode 160 for the entire electrode pattern.
  • the lower electrode 131 of the lower electrode pattern 13 and the lower electrode 131 ′ of the lower electrode pattern 13 ′ are electrically connected by the connecting portion 132.
  • the surrounding electrode 151 surrounds most of the periphery of the lower electrode 131 and is connected to the terminal portion T2.
  • First slits 14 and 14 ′ are formed in the lower electrode patterns 13 and 13 ′.
  • the moisture-sensitive films 171 and 171 ′ in the moisture-sensitive film pattern 17 fill the first slits 14 and 14 ′ and continuously expose the surrounding electrodes 151 and 151 ′ along the surrounding electrodes 151 and 151 ′.
  • the slits 18 and 18 ' are formed.
  • the upper electrode pattern 19 includes an upper electrode 191 that covers the moisture sensitive film 171 so as to be partially exposed, an upper electrode 191 ′ that covers the moisture sensitive film 171 ′, and covered electrode portions 192 to 192 that cover the terminal portions T 1 to T 4. 195.
  • the upper electrode 191 includes a connecting portion 191A surrounded by a U-shaped or U-shaped slit, and the upper electrode 191 ′ includes a connecting portion 191B surrounded by a U-shaped or U-shaped slit. 191C is included.
  • the connecting portion 191A is connected to the connecting portion 133 included in the lower electrode pattern 13, the connecting portion 191B is connected to the connecting portion 134 included in the lower electrode pattern 13, and the connecting portion 191C is connected to the connecting portion 135 included in the lower electrode pattern 13. Connected with. By connecting these connecting portions, the surrounding electrodes 151 and 151 ′ each have a continuous pattern.
  • the upper electrodes 191 and 191 ′ are in close contact with the surrounding electrodes 151 and 151 ′ and are in contact with the insulating substrate. There is nothing. Therefore, the upper electrodes 191 and 191 ′ can be prevented from peeling off. In the state where the upper electrode pattern 19 fills the second slits 18 and 18 ′, most of the peripheral portions of the moisture sensitive films 171 and 171 ′ are covered with the upper electrode patterns 19 and 19 ′. As a result, moisture absorption and drainage are eliminated from the outer periphery of the moisture sensitive films 171 and 171 ′, and the hysteresis characteristics of the moisture sensitive films 171 and 171 ′ are improved.
  • providing the surrounding electrode 160 has an effect of reducing noise mixed in the output, but the surrounding electrode 160 is not necessarily provided.
  • [Third Embodiment] 8A to 8E show a lower electrode pattern 213 and a surrounding electrode pattern 215 used in the capacitive humidity sensor according to the third embodiment of the present invention, a moisture sensitive film pattern 217, an upper electrode pattern 219, The top view which shows the state which covered the lower electrode pattern 213 with the moisture sensitive film pattern 217, and the top view which shows the state which formed the upper electrode pattern 219 on the moisture sensitive film pattern 217 are shown.
  • These patterns (213, 215, 217, 219) are formed by the same method using the same material as each pattern in the first embodiment.
  • the same components as those of the second embodiment shown in FIG. 6 are denoted by the reference numerals obtained by adding the number of 200 to the reference numerals of FIG.
  • the surrounding electrode 351 of the surrounding electrode pattern 215 surrounds most of the periphery of the lower electrode 331 and is connected to the terminal portion T2.
  • a first slit 214 is formed in the lower electrode pattern 213.
  • the moisture sensitive film 371 in the moisture sensitive film pattern 217 is configured to form a second slit 218 that fills the first slit 214 and continuously exposes the surrounding electrode 351 along the surrounding electrode 351. .
  • the upper electrode pattern 219 includes an upper electrode 391 that covers the moisture sensitive film 371 so as to be partially exposed, and covered electrode portions 392, 393, and 395 that cover the terminal portions T1, T2, and T4.
  • the upper electrode 391 includes a connecting portion 391A surrounded by a U-shaped or U-shaped slit.
  • the connecting portion 391A is connected to the connecting portion 333 included in the lower electrode pattern 213. Due to the connection of these connecting portions, the surrounding electrode 351 becomes a continuous pattern.
  • the surrounding electrode 351 is provided under the second slit 218, and the upper electrode 391 is in close contact with the surrounding electrode 351 and does not come into contact with the insulating substrate. Therefore, the upper electrode 391 can be prevented from peeling off.
  • the upper electrode pattern 219 fills the second slit 218, most of the peripheral edge of the moisture sensitive film 371 is covered with the upper electrode pattern 219. As a result, moisture absorption and drainage are eliminated from the outer peripheral portion of the moisture sensitive film 371, and the hysteresis characteristic of the moisture sensitive film 371 is improved.
  • providing the surrounding electrode 360 has an effect of reducing noise mixed in during output.
  • the surrounding electrode 360 is not necessarily provided.
  • connection electrode included in the lower electrode pattern is covered with the upper electrode pattern, but this configuration is not necessarily employed.
  • connection electrode included in the lower electrode pattern is covered with the upper electrode pattern, but this configuration is not necessarily employed.
  • the present invention most of the peripheral part of the moisture sensitive film pattern is covered with the upper electrode pattern, so that excess moisture absorption and exhaustion from the outer peripheral part of the moisture sensitive film is eliminated, and non-moisture permeable protection is achieved. Even if a film is not formed, the hysteresis characteristic of the moisture sensitive film is improved.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
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  • General Health & Medical Sciences (AREA)
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  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

L'invention concerne un capteur capacitif d'humidité permettant d'empêcher l'infiltration et l'évacuation de l'humidité en excès sans formation d'un film protecteur imperméable à l'humidité. Une première fente 4 est formée entre une électrode périphérique 51 et la plus grande partie d'une section de bord périphérique d'une électrode inférieure 31. Un motif 7 de film sensible à l'humidité remplit la première fente 4 formée entre l'électrode périphérique 51 et la plus grande partie de la section de bord périphérique de l'électrode inférieure 31, et est pourvu d'une seconde fente 8 destinée à amener l'électrode périphérique 51 à être exposée de façon continue, la seconde fente 8 étant disposée le long de l'électrode périphérique 51. Un motif 9 d'électrode supérieure est formé de manière à recouvrir la plus grande partie d'une section de bord périphérique d'un film 71 sensible à l'humidité. Le motif 9 d'électrode supérieure est formé de manière à remplir la seconde fente 8 dans le motif 7 de film sensible à l'humidité.
PCT/JP2015/084797 2014-12-11 2015-12-11 Capteur capacitif d'humidité WO2016093343A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2016563748A JP6611362B2 (ja) 2014-12-11 2015-12-11 容量式湿度センサ
CN201580066677.8A CN107003262B (zh) 2014-12-11 2015-12-11 电容式湿度传感器

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Application Number Priority Date Filing Date Title
JP2014-250773 2014-12-11
JP2014250773 2014-12-11

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WO2016093343A1 true WO2016093343A1 (fr) 2016-06-16

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60239657A (ja) * 1984-05-15 1985-11-28 Sharp Corp 感湿素子及びその製造方法
US4603372A (en) * 1984-11-05 1986-07-29 Direction De La Meteorologie Du Ministere Des Transports Method of fabricating a temperature or humidity sensor of the thin film type, and sensors obtained thereby
JPH0365643A (ja) * 1989-06-19 1991-03-20 Testoterm Messtechnik Gmbh & Co 静電容量型湿度センサー
JPH03167463A (ja) * 1989-11-27 1991-07-19 Yamatake Honeywell Co Ltd 感湿素子
US20090134026A1 (en) * 2004-08-27 2009-05-28 Markus Langenbacher Gas sensor and method for the production thereof
JP2011196835A (ja) * 2010-03-19 2011-10-06 Fujitsu Ltd センサ装置およびその製造方法
WO2012046501A1 (fr) * 2010-10-04 2012-04-12 アルプス電気株式会社 Capteur détecteur d'humidité et son procédé de production

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0814553B2 (ja) * 1986-10-09 1996-02-14 エヌオーケー株式会社 湿度センサ
JPS63163265A (ja) * 1986-12-26 1988-07-06 Toshiba Corp 感湿素子及びその製造方法
JPH03163345A (ja) * 1989-11-22 1991-07-15 Yamatake Honeywell Co Ltd 感湿素子
WO2010113711A1 (fr) * 2009-03-31 2010-10-07 アルプス電気株式会社 Capteur d'humidité capacitif et son procédé de production
CN102549416B (zh) * 2009-11-30 2014-03-12 阿尔卑斯电气株式会社 湿度检测传感器

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60239657A (ja) * 1984-05-15 1985-11-28 Sharp Corp 感湿素子及びその製造方法
US4603372A (en) * 1984-11-05 1986-07-29 Direction De La Meteorologie Du Ministere Des Transports Method of fabricating a temperature or humidity sensor of the thin film type, and sensors obtained thereby
JPH0365643A (ja) * 1989-06-19 1991-03-20 Testoterm Messtechnik Gmbh & Co 静電容量型湿度センサー
JPH03167463A (ja) * 1989-11-27 1991-07-19 Yamatake Honeywell Co Ltd 感湿素子
US20090134026A1 (en) * 2004-08-27 2009-05-28 Markus Langenbacher Gas sensor and method for the production thereof
JP2011196835A (ja) * 2010-03-19 2011-10-06 Fujitsu Ltd センサ装置およびその製造方法
WO2012046501A1 (fr) * 2010-10-04 2012-04-12 アルプス電気株式会社 Capteur détecteur d'humidité et son procédé de production

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CN107003262A (zh) 2017-08-01
JP6611362B2 (ja) 2019-11-27
CN107003262B (zh) 2019-10-11
JPWO2016093343A1 (ja) 2017-09-21

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