WO2011065478A1 - Appareil de traitement de substrat et procédé de fabrication d'élément d'affichage - Google Patents

Appareil de traitement de substrat et procédé de fabrication d'élément d'affichage Download PDF

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Publication number
WO2011065478A1
WO2011065478A1 PCT/JP2010/071124 JP2010071124W WO2011065478A1 WO 2011065478 A1 WO2011065478 A1 WO 2011065478A1 JP 2010071124 W JP2010071124 W JP 2010071124W WO 2011065478 A1 WO2011065478 A1 WO 2011065478A1
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WO
WIPO (PCT)
Prior art keywords
substrate
unit
processing apparatus
sheet substrate
substrate holding
Prior art date
Application number
PCT/JP2010/071124
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English (en)
Japanese (ja)
Inventor
章 宮地
徹 木内
圭 奈良
Original Assignee
株式会社ニコン
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社ニコン filed Critical 株式会社ニコン
Priority to CN201080048800.0A priority Critical patent/CN102666323B/zh
Priority to KR1020187019872A priority patent/KR101906129B1/ko
Priority to KR1020127009105A priority patent/KR101843545B1/ko
Priority to JP2011543319A priority patent/JP5887935B2/ja
Priority to KR1020187007930A priority patent/KR101880017B1/ko
Publication of WO2011065478A1 publication Critical patent/WO2011065478A1/fr
Priority to HK13101660.2A priority patent/HK1174316A1/xx

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • B65G49/067—Sheet handling, means, e.g. manipulators, devices for turning or tilting sheet glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G2249/00—Aspects relating to conveying systems for the manufacture of fragile sheets
    • B65G2249/04—Arrangements of vacuum systems or suction cups
    • B65G2249/045—Details of suction cups suction cups

Definitions

  • the present invention relates to a substrate processing apparatus and a display element manufacturing method.
  • This application claims priority based on Japanese Patent Application No. 2009-268789 filed in Japan on November 26, 2009, the contents of which are incorporated herein by reference.
  • an organic electroluminescence (organic EL) element As a display element constituting a display device such as a display device, for example, an organic electroluminescence (organic EL) element is known.
  • the organic EL element has an anode and a cathode on a substrate and an organic light emitting layer sandwiched between the anode and the cathode.
  • holes are injected from an anode into an organic light emitting layer to combine holes and electrons in the organic light emitting layer, and display light can be obtained by emitted light at the time of the combination.
  • an electric circuit connected to, for example, an anode and a cathode is formed on a substrate.
  • a method for producing an organic EL element for example, a method called a roll-to-roll method (hereinafter simply referred to as “roll method”) is known (for example, see Patent Document 1).
  • roll method a single sheet-like substrate wound around a substrate supply side roller is sent out, and the substrate is transported while being wound up by a substrate recovery side roller.
  • a light emitting layer, an anode, a cathode, an electric circuit, and the like constituting an organic EL element are sequentially formed on a substrate in a processing apparatus.
  • An object according to the present invention is to provide a substrate processing apparatus and a display element manufacturing method excellent in processing accuracy.
  • a substrate processing apparatus includes a processing unit that performs predetermined processing on a substrate, and a substrate holding unit that moves relative to the processing unit and holds a substrate while forming a surface to be processed of the substrate.
  • a display element manufacturing method includes a processing step of performing a predetermined process on a surface to be processed of a substrate, and a substrate holding step of holding the substrate while forming the surface to be processed of the substrate by the substrate holding portion. And a moving step of moving the substrate holding portion disposed on the endless support member in the substrate transport direction.
  • FIG. 1B is a bb cross-sectional view of the organic EL element in FIG. 1A.
  • FIG. 1C is a cc cross-sectional view of the organic EL element in FIG. 1A.
  • the figure which shows the structure of a conveyance mechanism The figure which shows the structure of a conveyance mechanism.
  • substrate Sectional drawing of the partition formed in a sheet
  • Sectional drawing of the droplet apply
  • FIG. 1A is a plan view showing a configuration of an organic EL element.
  • 1B is a cross-sectional view taken along line bb in FIG. 1A.
  • 1C is a cross-sectional view taken along the line cc in FIG. 1A.
  • a gate insulating layer I is formed on the gate electrode G.
  • a source electrode S of the source bus line SBL is formed on the gate insulating layer I, and a drain electrode D connected to the pixel electrode P is formed.
  • An organic semiconductor layer OS is formed between the source electrode S and the drain electrode D. This completes the field effect transistor.
  • a light emitting layer IR is formed on the pixel electrode P, and a transparent electrode ITO is formed on the light emitting layer IR.
  • a partition wall BA (bank layer) is formed on the sheet substrate FB.
  • source bus lines SBL are formed between the barrier ribs BA.
  • the gate bus line GBL is also formed between the partition walls BA in the same manner as the source bus line SBL.
  • the organic EL element 50 is suitably used for a display device such as a display device and a display unit of an electronic device.
  • a display device such as a display device and a display unit of an electronic device.
  • an organic EL element 50 formed in a panel shape is used.
  • TFT thin film transistor
  • a pixel electrode In manufacturing such an organic EL element 50, it is necessary to form a substrate on which a thin film transistor (TFT) and a pixel electrode are formed.
  • TFT thin film transistor
  • a pixel electrode In order to accurately form one or more organic compound layers (light-emitting element layers) including a light-emitting layer on the pixel electrode on the substrate, a partition BA (bank layer) is easily and accurately formed in the boundary region of the pixel electrode. It is desirable.
  • FIG. 2 is a schematic diagram illustrating a configuration of a substrate processing apparatus 100 that performs processing using a flexible sheet substrate FB.
  • the substrate processing apparatus 100 is an apparatus that forms the organic EL element 50 shown in FIGS. 1A to 1C using a belt-shaped sheet substrate FB.
  • the substrate processing apparatus 100 includes a substrate supply unit 101, a substrate processing unit 102, a substrate collection unit 103, and a control unit 104.
  • the sheet substrate FB is transported from the substrate supply unit 101 to the substrate recovery unit 103 via the substrate processing unit 102.
  • the control unit 104 controls the overall operation of the substrate processing apparatus 100.
  • an XYZ orthogonal coordinate system is set, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system.
  • the sheet substrate FB is conveyed in the X-axis direction
  • the direction orthogonal to the X-axis direction is the Y-axis direction
  • the direction orthogonal to the X-axis direction and the Y-axis direction (that is, the vertical direction) is Z.
  • Z Axial direction.
  • the rotation (inclination) directions around the X axis, Y axis, and Z axis are the ⁇ X, ⁇ Y, and ⁇ Z directions, respectively.
  • the sheet substrate FB for example, a heat-resistant resin film, stainless steel, or the like can be used.
  • the resin film is made of polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin, polystyrene resin, vinyl acetate resin, etc. Can be used.
  • the dimension in the Y direction of the sheet substrate FB is, for example, about 1 m to 2 m, and the dimension in the X direction is, for example, 10 m or more. Of course, this dimension is only an example and is not limited thereto.
  • the dimension in the Y direction of the sheet substrate FB may be 50 cm or less, or 2 m or more.
  • substrate FB may be 10 m or less.
  • the flexibility in the present embodiment refers to the property that the substrate can be bent without being broken or broken even when a predetermined force of at least its own weight is applied to the substrate. The flexibility varies depending on the material, size, thickness, environment such as temperature, etc. of the substrate.
  • the sheet substrate FB preferably has a smaller coefficient of thermal expansion so that the dimensions do not change even when subjected to heat of about 200 ° C., for example.
  • an inorganic filler can be mixed with a resin film to reduce the thermal expansion coefficient.
  • the inorganic filler include titanium oxide, zinc oxide, alumina, silicon oxide and the like.
  • the substrate supply unit 101 is connected to a supply side connection unit 102 ⁇ / b> A provided in the substrate processing unit 102.
  • the substrate supply unit 101 supplies, for example, the sheet substrate FB wound in a roll shape to the substrate processing unit 102.
  • the substrate recovery unit 103 recovers the sheet substrate FB that has been processed by the substrate processing unit 102.
  • the substrate supply unit 101 is not limited to the configuration in which the sheet substrate FB is accommodated in a rolled state, and for example, the sheet substrate FB is accommodated in a state in which the sheet substrate FB is folded several times. It doesn't matter.
  • the folded state includes a state in which no crease is formed and the substrate is not broken or broken even when a predetermined force of at least about its own weight is applied to the substrate.
  • FIG. 3 is a diagram illustrating a configuration of the substrate processing unit 102.
  • the substrate processing unit 102 includes a transport unit 105, an element forming unit 106, an alignment unit 107, and a substrate cutting unit 108.
  • the substrate processing unit 102 forms each component of the organic EL element 50 on the sheet substrate FB while conveying the sheet substrate FB supplied from the substrate supply unit 101, and the sheet on which the organic EL element 50 is formed. This is the part that sends out the substrate FB to the substrate recovery unit 103.
  • the element forming unit 106 includes a partition forming unit 91, an electrode forming unit 92, and a light emitting layer forming unit 93.
  • the partition wall forming portion 91, the electrode forming portion 92, and the light emitting layer forming portion 93 are arranged in the order of the partition wall forming portion 91, the electrode forming portion 92, and the light emitting layer forming portion 93 from the upstream side to the downstream side in the transport direction of the sheet substrate FB. ing.
  • each structure of the element formation part 106 is demonstrated.
  • the partition wall forming unit 91 includes an imprint roller 110 and a thermal transfer roller 115.
  • the partition forming unit 91 forms the partition BA on the sheet substrate FB sent from the substrate supply unit 101.
  • the sheet substrate FB is pressed by the imprint roller 110, and the sheet substrate FB is heated to the glass transition point or more by the thermal transfer roller 115 so that the pressed partition wall BA maintains its shape. Therefore, the mold shape formed on the roller surface of the imprint roller 110 is transferred to the sheet substrate FB.
  • the sheet substrate FB is heated to, for example, about 200 ° C. by the thermal transfer roller 115.
  • the roller surface of the imprint roller 110 is mirror-finished, and a fine imprint mold 111 made of a material such as SiC or Ta is attached to the roller surface.
  • the fine imprint mold 111 forms a thin film transistor wiring stamper and a color filter stamper.
  • the imprint roller 110 forms the alignment mark AM on the sheet substrate FB using the fine imprint mold 111.
  • the fine imprint mold 111 has a stamper for the alignment marks AM.
  • the electrode forming portion 92 is provided on the + X side of the partition wall forming portion 91, and for example, a thin film transistor using an organic semiconductor is formed. Specifically, after forming the gate electrode G, the gate insulating layer I, the source electrode S, the drain electrode D, and the pixel electrode P as shown in FIGS. 1A to 1C, the organic semiconductor layer OS is formed.
  • the thin film transistor may be an inorganic semiconductor type or an organic semiconductor type.
  • an inorganic semiconductor thin film transistor an amorphous silicon type is known, but a thin film transistor using an organic semiconductor may be used. If a thin film transistor is formed using this organic semiconductor, the thin film transistor can be formed by utilizing a printing technique or a droplet coating technique.
  • field effect transistors FETs as shown in FIGS. 1A to 1C are particularly preferable.
  • the electrode forming unit 92 includes a droplet applying device 120, a heat treatment device BK, a cutting device 130, and the like.
  • a droplet applying device 120 for example, a droplet applying device 120G used when forming the gate electrode G, a droplet applying device 120I used when forming the gate insulating layer I, the source electrode S, A droplet applying device 120SD used when forming the drain electrode D and the pixel electrode P, a droplet applying device 120OS used when forming the organic semiconductor OS, and the like are used.
  • FIG. 4 is a plan view showing the configuration of the droplet applying apparatus 120.
  • FIG. 4 shows a configuration when the droplet applying device 120 is viewed from the + Z side.
  • the droplet applying device 120 is formed long in the Y-axis direction.
  • the droplet applying device 120 is provided with a driving device (not shown).
  • the droplet applying device 120 can be moved, for example, in the X direction, the Y direction, and the ⁇ Z direction by the driving device.
  • a plurality of nozzles 122 are formed in the droplet applying device 120.
  • the nozzle 122 is provided on the surface of the droplet applying device 120 that faces the sheet substrate FB.
  • the nozzles 122 are arranged, for example, along the Y-axis direction, and two rows (nozzle rows) of the nozzles 122 are formed, for example.
  • the control unit 104 can apply the droplets to all the nozzles 122 at once, and can individually adjust the timing of applying the droplets to each nozzle 122.
  • an inkjet method or a dispenser method can be employed.
  • the inkjet method include a charge control method, a pressure vibration method, an electromechanical conversion method, an electrothermal conversion method, and an electrostatic suction method.
  • the use of the material is less wasteful, and a desired amount of the material can be accurately disposed at a desired position.
  • the amount of one drop of metal ink applied by the droplet application method is, for example, 1 to 300 nanograms.
  • the droplet applying device 120G applies metal ink into the partition wall BA of the gate bus line GBL.
  • the droplet applying device 120I applies an electrically insulating ink of polyimide resin or urethane resin to the switching unit.
  • the droplet applying device 120SD applies metal ink in the partition BA of the source bus line SBL and in the partition BA of the pixel electrode P.
  • the droplet applying device 120OS applies the organic semiconductor ink to the switching unit between the source electrode S and the drain electrode D.
  • Metal ink is a liquid in which a conductor having a particle diameter of about 5 nm is stably dispersed in a solvent at room temperature, and carbon, silver (Ag), gold (Au), or the like is used as the conductor.
  • the compound forming the organic semiconductor ink may be a single crystal material family or an amorphous material, and may be a low molecule or a polymer. Particularly preferred among the compounds forming the organic semiconductor ink include a single crystal or ⁇ -conjugated polymer of a condensed ring aromatic hydrocarbon compound typified by pentacene, triphenylene, anthracene and the like.
  • the heat treatment apparatus BK is disposed on the + X side (downstream side in the substrate transport direction) of each droplet applying apparatus 120.
  • the heat treatment apparatus BK can radiate, for example, hot air or far infrared rays to the sheet substrate FB.
  • the heat treatment apparatus BK uses these radiant heats to dry or bake (bake) the droplets applied to the sheet substrate FB and harden them.
  • the cutting device 130 is provided on the + X side of the droplet applying device 120SD and on the upstream side of the droplet applying device 120OS.
  • the cutting device 130 cuts the source electrode S and the drain electrode D formed by the droplet applying device 120SD using, for example, laser light.
  • the cutting device 130 includes a light source (not shown) and a galvanometer mirror 131 that irradiates the laser light from the light source onto the sheet substrate FB.
  • a laser having a wavelength to be absorbed is preferable for the metal film to be cut. Further, by using a pulsed laser, thermal diffusion can be prevented and damage other than the cut portion can be reduced.
  • a femtosecond laser with a wavelength of 760 nm is preferable.
  • a femtosecond laser irradiation unit using a titanium sapphire laser as a light source is used.
  • the femtosecond laser irradiation unit irradiates the laser beam LL with a pulse of 10 KHz to 40 KHz, for example.
  • the distance between the source electrode S and the drain electrode D that determines the performance of the field effect transistor can be accurately cut. ing.
  • the distance between the source electrode S and the drain electrode D is, for example, about 3 ⁇ m to about 30 ⁇ m.
  • a carbon dioxide laser or a green laser can be used.
  • the galvanometer mirror 131 is disposed in the optical path of the laser beam LL.
  • the galvanometer mirror 131 reflects the laser beam LL from the light source onto the sheet substrate FB.
  • the galvanometer mirror 131 is provided to be rotatable in the ⁇ X direction, the ⁇ Y direction, and the ⁇ Z direction, for example. As the galvano mirror 131 rotates, the irradiation position of the laser beam LL changes.
  • a thin film transistor or the like can be formed by utilizing a printing technique or a droplet coating method technique without using a so-called photolithography process. Yes.
  • a printing technique a droplet coating technique, or the like
  • the partition wall BA is formed by using the partition wall forming portion 91, ink bleeding and spreading are prevented.
  • the distance between the source electrode S and the drain electrode D that determines the performance of the thin film transistor is formed by laser processing or machining.
  • the light emitting layer forming portion 93 is disposed on the + X side of the electrode forming portion 92.
  • the light emitting layer forming unit 93 forms, for example, the light emitting layer IR and the pixel electrode ITO which are components of the organic EL device on the sheet substrate FB on which the electrodes are formed.
  • the light emitting layer forming unit 93 includes a droplet applying device 140 and a heat treatment device BK.
  • the light emitting layer IR formed by the light emitting layer forming portion 93 contains a host compound and a phosphorescent compound (also referred to as a phosphorescent compound).
  • the host compound is a compound contained in the light emitting layer.
  • a phosphorescent compound is a compound in which light emission from an excited triplet is observed and emits phosphorescence at room temperature.
  • a droplet applying device 140 for example, a droplet applying device 140Re that forms a red light emitting layer, a droplet applying device 140Gr that forms a green light emitting layer, a droplet applying device 140Bl that forms a blue light emitting layer, an insulating material.
  • a droplet applying device 140I that forms a layer, a droplet applying device 140IT that forms a pixel electrode ITO, and the like are used.
  • an ink jet method or a dispenser method can be adopted as in the case of the droplet applying device 120 described above.
  • a device for forming these layers for example, a droplet applying device
  • the droplet applying device 140Re applies the R solution onto the pixel electrode P.
  • the discharge amount of the R solution is adjusted so that the film thickness after drying becomes 100 nm.
  • the R solution for example, a solution obtained by dissolving a red dopant material in 1,2-dichloroethane in polyvinyl carbazole (PVK) as a host material is used.
  • the droplet applying device 140Gr applies the G solution onto the pixel electrode P.
  • the G solution for example, a solution in which a green dopant material is dissolved in 1,2-dichloroethane in a host material PVK is used.
  • the droplet applying device 140B1 applies the B solution onto the pixel electrode P.
  • the solution B for example, a solution in which a blue dopant material is dissolved in 1,2-dichloroethane in a host material PVK is used.
  • the droplet applying device 120I applies an electrically insulating ink to a part of the gate bus line GBL or the source bus line SBL.
  • the electrically insulating ink for example, polyimide resin or urethane resin ink is used.
  • the droplet applying device 120IT applies ITO (Indium Tin Oxide) ink on the red, green, and blue light emitting layers.
  • ITO Indium Tin Oxide
  • a compound in which several percent of tin oxide (SnO 2 ) is added to indium oxide (In 2 O 3 ) is used.
  • an amorphous material such as IDIXO (In 2 O 3 —ZnO) capable of forming a transparent conductive film may be used.
  • the transparent conductive film preferably has a transmittance of 90% or more.
  • the heat treatment apparatus BK is disposed on the + X side (downstream side in the substrate transport direction) of each droplet applying apparatus 140.
  • the heat treatment apparatus BK can emit hot air, far-infrared rays, and the like to the sheet substrate FB, similarly to the heat treatment apparatus BK used in the electrode forming unit 92.
  • the heat treatment apparatus BK uses these radiant heats to dry or bake (bake) the droplets applied to the sheet substrate FB and harden them.
  • the transport unit 105 includes a plurality of rollers RR and a transport mechanism TR disposed at positions along the X direction.
  • the roller RR may be a rubber roller that sandwiches the sheet substrate FB from both sides, or may be a roller RR with a ratchet as long as the sheet substrate FB has perforation.
  • some of the rollers RR are movable in the Y-axis direction orthogonal to the transport direction.
  • the transport mechanism TR is disposed at a position corresponding to the electrode forming portion 92 and the light emitting layer forming portion 93 in the element forming portion 106 in the X direction.
  • Alignment unit 107 has a plurality of alignment cameras CA (CA1 to CA8) provided along the X direction.
  • the alignment camera CA may pick up an image with CCD or CMOS under visible light illumination, process the picked-up image to detect the position of the alignment mark AM, or irradiate the alignment mark AM with the laser light and scatter the light. Even if light is received, the position of the alignment mark AM may be detected.
  • the alignment camera CA1 is disposed on the + X side of the thermal transfer roller 115.
  • the alignment camera CA1 detects the position of the alignment mark AM formed by the thermal transfer roller 115 on the sheet substrate FB.
  • the alignment cameras CA2 to CA8 are respectively arranged on the + X side of the heat treatment apparatus BK. Alignment cameras CA2 to CA8 detect the position of alignment mark AM on sheet substrate FB that has passed through heat treatment apparatus BK.
  • the sheet substrate FB may expand and contract in the X axis direction and the Y axis direction through the thermal transfer roller 115 and the heat treatment apparatus BK.
  • the alignment camera CA By disposing the alignment camera CA on the + X side of the thermal transfer roller 115 that performs heat treatment or on the + X side of the heat treatment apparatus BK in this way, it is possible to detect the positional deviation of the sheet substrate FB due to thermal deformation or the like. Yes.
  • the detection results from the alignment cameras CA1 to CA8 are transmitted to the control unit 104. Based on the detection results of the alignment cameras CA1 to CA8, the control unit 104 adjusts, for example, the ink application position and timing of the droplet application device 120 and the droplet application device 140, and supplies the sheet substrate FB from the substrate supply unit 101. Adjustment of the speed and the conveyance speed of the roller RR, adjustment of movement in the Y direction by the roller RR, adjustment of the cutting position and timing of the cutting device 130, and the like are performed.
  • FIG. 5 is a diagram illustrating a configuration of the transport mechanism TR.
  • the plurality of transport mechanisms TR shown in FIG. 3 have the same configuration.
  • the transport mechanism TR disposed corresponding to the droplet applying device 120 among the plurality of transport mechanisms TR will be described as an example.
  • the transport mechanism TR includes a belt mechanism 10, a belt driving mechanism 20, and an air pad mechanism 40.
  • the belt mechanism 10 and the belt driving mechanism 20 are disposed on the ⁇ Z side with respect to the sheet substrate FB.
  • the air pad mechanism 40 is disposed on the + Z side with respect to the sheet substrate FB.
  • the belt mechanism 10 is disposed around the belt drive mechanism 20 along the ⁇ Y direction.
  • the belt mechanism 10 includes a rotating unit 11 and a suction holding plate (substrate holding unit) 12.
  • the rotating part 11 is configured by connecting a plurality of support members 13 in an endless manner. Specifically, support members 13 adjacent to each other in the ⁇ Y direction are connected to each other by a common shaft member 14 so as to be rotatable. This configuration is provided continuously in the ⁇ Y direction, and the rotating portion 11 is formed in an endless shape.
  • the belt mechanism 10 is provided so as to be rotatable in the ⁇ Y direction by the belt drive mechanism 20.
  • the adsorption holding plate 12 is provided on the outer peripheral surface of each support member 13.
  • the suction holding plate 12 is a plate-like member formed in a rectangular shape, for example.
  • the suction holding plate 12 has a suction holding surface 12a that sucks and holds the sheet substrate FB.
  • the suction holding surface 12 a is provided outside the belt mechanism 10.
  • FIG. 6 is a diagram when the transport mechanism TR is viewed from the + Z side. As shown in FIG. 6, the suction holding plate 12 is formed so as to protrude in the Y direction with respect to the sheet substrate FB. As shown in FIGS. 5 and 6, the transport mechanism TR holds the sheet substrate FB by the four suction holding plates 12 (S) at the center in the X direction.
  • FIG. 7 and 8 are diagrams showing the configuration of one suction holding plate 12.
  • FIG. 7 is a view when the suction holding plate 12 is viewed from the + Z side
  • FIG. 8 is a view showing the configuration of the AA ′ cross section in FIG.
  • the suction holding plate 12 has a configuration in which a holding member 15 and a suction pad 16 are arranged on a support plate 17, respectively.
  • the holding member 15 is disposed substantially at the center of the support plate 17 in the Y direction, and is formed to have a dimension that covers the processing target FBA of the sheet substrate FB shown in FIG. 7 in the Y direction. Therefore, at least the portion to be processed FBA of the sheet substrate FB is held by the holding member 15.
  • the surface on the + Z side of the holding member 15 is a holding surface 15a for holding the sheet substrate FB.
  • the holding member 15 is formed so that the holding surface 15a is flat. For this reason, the to-be-processed part FBA of the sheet
  • the suction pads 16 are arranged one by one on both end sides in the Y direction with respect to the holding member 15.
  • the suction pad 16 sucks a position of the sheet substrate FB that deviates from the processed portion FBA toward the edge in the Y direction (for example, a position other than the processed portion FBA of the sheet substrate FB).
  • the suction pad 16 is held by a pad support member 17b and is configured to have a negative pressure on the suction surface 16a on the + Z side in FIGS.
  • the suction pad 16 vacuum-sucks the sheet substrate FB with the suction surface 16a.
  • the ⁇ Z side of the suction pad 16 is connected to a pad support member 17 b and a pipe 16 b formed in the support plate 17, and the pipe 16 b is connected to a pipe 17 c outside the support plate 17.
  • the pipe 17c is connected to a pump mechanism 18 shown in FIG. 9, and the suction surface 16a is formed at a negative pressure by the pump mechanism 18.
  • the suction surface 16a is formed so as to be flush with the holding surface 15a of the holding member 15. Accordingly, the suction holding surface 12a formed by the suction holding plate 12 is formed by the holding surface 15a and the suction surface 16a formed to be flush with each other.
  • the sheet substrate FB is adsorbed on the adsorption surfaces 16a provided at both ends in the Y direction of the adsorption holding surface 12a, and is not adsorbed on the central holding surface 15a in the Y direction.
  • the pad support member 17b is provided so as to be movable in the Y direction by the Y direction actuator 17a. With this configuration, the position of the suction pad 16 in the Y direction can be moved in the Y direction.
  • the sheet substrate FB is sucked by the two suction pads 16, the + Y side suction pad 16 is moved in the + Y direction, and the ⁇ Y side suction pad 16 is moved in the ⁇ Y direction.
  • Tension can be applied to the sheet substrate FB in the Y direction while maintaining the holding state on the holding surface 15a.
  • FIG. 9 is a cross-sectional view showing the configuration of the pump mechanism 18 connected to the suction pad 16.
  • the pump mechanism 18 includes a fixed cylindrical shaft 30, a rotating cylinder 31, and a suction pump 32.
  • the fixed cylindrical shaft 30 is formed in a cylindrical shape as viewed in the Y direction, and is held in a fixed position.
  • the fixed cylindrical shaft 30 has a convex portion 30a, a suction supply port 30b, and an air release port 30c.
  • Two convex portions 30 a are provided on the + Z side of the outer surface of the fixed cylindrical shaft 30.
  • the convex portions 30 a are provided along the Y direction across both ends of the fixed cylindrical shaft 30 in the Y direction.
  • the suction supply port 30 b is an opening formed along the Y direction inside the fixed cylindrical shaft 30, and is connected to the suction pump 32.
  • the suction supply port 30b is provided with a branch portion 30d formed in the + Z direction in the drawing.
  • the branch portion 30d is formed so as to be connected between the two convex portions 30a. For this reason, the suction action of the suction pump 32 extends between the two convex portions 30a via the suction supply port 30b and the branch portion 30d.
  • the atmosphere release port 30c is formed between both ends of the fixed cylindrical shaft 30 in the Y direction, and is connected to the atmosphere at both ends.
  • the air release port 30c has a branch portion 30e.
  • the branch part 30e is connected to a position deviated from between the two convex parts 30a.
  • the rotating cylinder 31 is provided so as to surround the fixed cylindrical shaft 30.
  • the rotating cylinder 31 is disposed with a certain gap between the rotating cylinder 31 and the fixed cylindrical shaft 30 via spacers 33 provided at both ends in the Y direction, for example.
  • the inner surface of the rotating cylinder 31 is in contact with the two convex portions 30 a of the fixed cylindrical shaft 30 through the spacer 33 without any gap. For this reason, the space between the outer surface of the fixed cylindrical shaft 30 and the inner surface of the rotating cylinder 31 is in a state divided into the space S1 and the space S2 by the two convex portions 30a. Among these, the space S1 is sucked by the suction pump 32, and the space S2 is always released to the atmosphere.
  • the rotary cylinder 31 is provided with a plurality of openings 31a along the ⁇ Y direction. Each opening 31a is connected to the pipe 16c. Of the plurality of openings 31 a, the opening 31 a connected to the space S ⁇ b> 1 is sucked by the suction pump 32. The rotating cylinder 31 is rotated in accordance with the rotational speed of the belt mechanism 10 by a rotating mechanism (not shown), and the sucked opening 31a is switched with rotation. In the present embodiment, the suction action is exerted on the openings 31a connected to the four rotating parts 11 that support the sheet substrate FB.
  • the pump mechanism 18 performs suction before the suction holding plate 12 closest to the ⁇ Y side among the four suction holding plates 12 reaches the position holding the sheet substrate FB. It is preferable that the suction holding plate 12 on the most + Y side is removed from the position where the sheet substrate FB is held and suction is released (released to the atmosphere) at the same time.
  • the belt drive mechanism 20 includes a base portion 21, a belt pressing portion 22, and a belt pressing actuator 23.
  • the base 21 is fixed with respect to other parts (for example, a floor part or a surface plate part) of the substrate processing part 102 so that the position does not fluctuate.
  • a plurality of belt pressing portions 22 are arranged along the ⁇ Y direction with respect to the base portion 21, and the rotation portions 11 corresponding to the respective suction holding plates 12 of the belt mechanism 10 are routed (for example, the rotation route of the rotation portion 11 or The outer periphery of the rotating belt mechanism 10 or the like is provided so as to press outward.
  • the belt mechanism 10 is supported by the plurality of belt pressing portions 22.
  • the front end of the belt pressing portion 22 is in contact with the belt mechanism 10 via a roller that can rotate in the ⁇ Y direction.
  • a plurality of belt pressing portions 22 are provided along the rotation direction of the belt mechanism 10.
  • the plurality of belt pressing portions 22 are arranged according to the pitch of the suction holding plate 12.
  • four belt pressing portions 22 are arranged on the + Z side of the base portion 21 so as to press one by one against the four suction holding plates 12 that hold the sheet substrate FB.
  • four belt pressing portions 22 are arranged on the + X side and the ⁇ X side of the base portion 21 so that the belt mechanism 10 does not bend.
  • the plurality of belt pressing portions 22 for example, four belt pressing portions 22 arranged on the + Z side of the base portion 21 are respectively connected to the belt pressing actuator 23.
  • These belt pressing portions 22 are provided by a belt pressing actuator 23 so as to be movable in the Z direction in the figure.
  • positioned at the + Z side of the base 21 are pressed by the + Z side.
  • the four suction holding plates 12 are disposed at a position where the droplet applying device 120 is processed and in the vicinity thereof.
  • the suction holding plate 12 is pressed by the belt pressing unit 22 at least at the processing position of the droplet applying device 120.
  • the eight belt pressing portions 22 disposed on the + X side and the ⁇ X side of the base portion 21 are fixed to the base portion 21, respectively.
  • the belt pressing part 22 may be comprised with the member which has high rigidity, and may be comprised with an elastic member like a spring.
  • the air pad mechanism 40 (gas layer forming part) includes a pad member 41, an airflow adjusting mechanism 42, and a pipe 43.
  • one pad member 41 is provided on the upstream side (+ X side) and the downstream side ( ⁇ X side) of the droplet applying device 120.
  • Each pad member 41 is provided with a plurality of gas ejection ports 41a for ejecting gas (eg, air, inert gas such as nitrogen) on the ⁇ Z side, and a plurality of gas suction ports 41b for sucking gas.
  • the gas ejection port 41 a and the gas suction port 41 b are connected to the airflow adjustment mechanism 42 via the pipe 43, respectively.
  • the air flow adjusting mechanism 42 adjusts the ejection amount of the gas ejection port 41a and the suction amount of the gas suction port 41b. By adjusting the ejection amount and the suction amount by the air flow adjusting mechanism 42, a gas layer (gas layer or receiving portion) is formed on the ⁇ Z side of the pad member 41 with a constant layer thickness in the Z direction. It is like that.
  • the transport mechanism TR is disposed across the droplet applying apparatuses 140R, 140G, and 140B.
  • the TR may be configured to be provided individually for each of the droplet applying apparatuses 140R, 140G, and 140B, or may be configured to extend over two of the three droplet applying apparatuses 140. .
  • the transport mechanism TR is individually provided for the droplet applying apparatuses 120G, 120I, and 120SD, but is not limited to this configuration.
  • the configuration may be such that the droplet coating apparatuses 120G, 120I, and 120SD are disposed across two droplet coating apparatuses 120, or the two droplet coating apparatuses 120 may be disposed across two.
  • the substrate processing apparatus 100 forms elements on the sheet substrate FB in the substrate processing unit 102 while supplying the sheet substrate FB from the substrate supply unit 101 to the substrate processing unit 102. .
  • the sheet substrate FB is transported by the roller RR and the transport mechanism TR.
  • the control unit 104 adjusts the rotation speed of each roller RR in the substrate processing unit 102 and the rotation speed of the belt mechanism 10 of the transport mechanism TR according to the supply speed of the sheet substrate FB supplied from the substrate supply unit 101. To do. In addition, the control unit 104 detects whether or not the roller RR is displaced in the Y-axis direction, and when it is displaced, moves the roller RR to correct the position. Further, the control unit 104 causes the position correction of the sheet substrate FB to be performed by moving the roller RR.
  • the sheet substrate FB supplied from the substrate supply unit 101 to the substrate processing unit 102 is first transported to the partition wall forming unit 91.
  • the sheet substrate FB is sandwiched and pressed between the imprint roller 110 and the thermal transfer roller 115, and the partition BA and the alignment mark AM are formed on the sheet substrate by thermal transfer.
  • FIG. 10 is a view showing a state in which the partition walls BA and the alignment marks AM are formed on the sheet substrate FB.
  • FIG. 11 is an enlarged view of a part of FIG.
  • FIG. 12 is a diagram showing a configuration along a section DD ′ in FIG. 10 and 11 show a state when the sheet substrate FB is viewed from the + Z side.
  • the partition wall BA is formed in the element formation region 60 at the center in the Y direction of the sheet substrate FB.
  • the element formation region 60 includes a region for forming the gate bus line GBL and the gate electrode G (gate formation region 52), the source bus line SBL, the source electrode S, A region for forming the drain electrode D and the anode P (source / drain formation region 53) is partitioned.
  • the gate formation region 52 is formed in a trapezoidal shape in a cross-sectional view.
  • the source / drain formation region 53 has the same shape.
  • the width W ( ⁇ m) in the partition wall BA is the line width of the gate bus line GBL.
  • the width W is preferably about 2 to 4 times the droplet diameter d ( ⁇ m) applied from the droplet applying apparatus 120G.
  • the cross-sectional shapes of the gate formation region 52 and the source / drain formation region 53 are V-shaped or U-shaped in cross-section so that the sheet substrate FB is easily peeled after the fine imprint mold 111 presses the sheet substrate FB. It is preferable to have a shape. As other shapes, for example, a rectangular shape in a sectional view may be used.
  • a pair of alignment marks AM is formed in the edge regions 61 at both ends in the Y direction of the sheet substrate FB.
  • the partition wall BA and the alignment mark AM are formed at the same time because the mutual positional relationship is important.
  • a predetermined distance PY between the alignment mark AM and the gate formation region 52 is defined in the Y-axis direction, and the alignment mark AM and the source / drain formation region 53 are defined in the X-axis direction.
  • a predetermined distance PX is defined. Therefore, based on the positions of the pair of alignment marks AM, it is possible to detect the deviation in the X-axis direction, the deviation in the Y-axis direction, and the ⁇ rotation of the sheet substrate FB.
  • a pair of alignment marks AM is provided for each of the plurality of rows of barrier ribs BA in the X-axis direction.
  • the alignment mark AM is provided for each row of barrier ribs BA.
  • the alignment mark AM may be provided not only in the edge region 61 of the sheet substrate FB but also in the element formation region 60. 10 and 11, the alignment mark AM has a cross shape, but may have another mark shape such as a circular mark or an oblique straight mark.
  • the sheet substrate FB is conveyed to the electrode forming unit 92 by the conveying roller RR.
  • the electrode forming section 92 droplets are applied by each droplet applying device 120, and electrodes are formed on the sheet substrate FB.
  • the control unit 104 operates the air pad mechanism 40 of the transport mechanism TR and the pump mechanism 18 before the sheet substrate FB is transported to the transport mechanism TR. By this operation, an air layer AR (see FIG. 20) having a constant thickness is formed on the ⁇ Z side of the pad member 41, and the suction operation on the suction pad 16 of the rotating unit 11 is started.
  • the sheet substrate FB is conveyed to the conveyance mechanism TR, the sheet substrate FB is adsorbed to the adsorption surface 16a by the adsorption pad 16 and is held on the holding surface 15a of the holding member 15. Therefore, the sheet substrate FB is held by the suction holding surface 12a.
  • the control unit 104 applies tension to the sheet substrate FB to increase the flatness of the sheet substrate FB by moving the pad support member 17b in the Y direction as necessary.
  • the control unit 104 moves the belt pressing unit 22 to the + Z side as shown in FIG. 20, and the sheet substrate is placed on the gas layer AR formed on the ⁇ Z side of the pad member 41. Press FB.
  • the sheet substrate FB is pressed to the ⁇ Z side also on the pad member 41 side by the reaction.
  • the surface ARc on the ⁇ Z side of the gas layer AR is used as a reference surface, and the sheet substrate FB is sandwiched between the gas layer AR and the suction holding surface 12a, so that the flatness of the processing surface FBc of the sheet substrate FB is improved. Will be maintained.
  • the control unit 104 conveys the sheet substrate FB in the + X direction by rotating the belt mechanism 10 while maintaining flatness on the processing surface FBc of the sheet substrate FB. Thereafter, the control unit 104 causes the same operation to be performed in the transport mechanism TR on the downstream side of the substrate processing unit 102.
  • the control unit 104 starts the operation of the droplet applying device 120 while maintaining the flatness of the processing surface FBc of the sheet substrate FB.
  • the gate bus line GBL and the gate electrode G are formed on the sheet substrate FB by the droplet applying device 120G.
  • 13A and 13B are views showing a state of the sheet substrate FB on which droplet application is performed by the droplet applying apparatus 120G.
  • the droplet applying device 120G applies metal ink to the gate forming region 52 of the sheet substrate FB on which the partition walls BA are formed, for example, in the order of 1 to 9. This order is, for example, the order in which the ink is applied linearly with the tension between the metal inks.
  • FIG. 13B is a diagram illustrating a state in which, for example, one drop of metal ink is applied. As shown in FIG. 13B, since the partition wall BA is provided, the metal ink applied to the gate formation region 52 is held without being diffused. In this manner, the droplet applying device 120G applies the metal ink to the entire gate forming region 52.
  • FIG. 14A is a diagram illustrating a state of the gate formation region 52 after the metal ink is dried. As shown in FIG. 14A, by drying the metal ink, the conductors included in the metal ink are laminated in a thin film shape. Such a thin film-like conductor is formed on the entire gate formation region 52, and as shown in FIG. 14B, the gate bus line GBL and the gate electrode G are formed on the sheet substrate FB.
  • the sheet substrate FB is conveyed to the ⁇ Z side of the droplet applying apparatus 120I.
  • the electrically insulating ink is applied to the sheet substrate FB.
  • electrically insulating ink is applied onto the gate bus line GBL and the gate electrode G passing through the source / drain formation region 53.
  • FIG. 15 shows a state in which the gate insulating layer I is formed in a circular shape so as to straddle the partition BA, but it is not particularly necessary to form the gate insulating layer I beyond the partition BA.
  • the sheet substrate FB is transported to the ⁇ Z side of the droplet applying apparatus 120SD.
  • metal ink is applied to the source / drain formation region 53 of the sheet substrate FB.
  • metal ink is ejected in the order of 1 to 9 shown in FIG.
  • the sheet substrate FB After discharging the metal ink, the sheet substrate FB is conveyed to the ⁇ Z side of the heat treatment apparatus BK, and the metal ink is dried. After the drying process, the conductor contained in the metal ink is laminated in a thin film shape, and the source bus line SBL, the source electrode S, the drain electrode D, and the anode P are formed. However, at this stage, the source electrode S and the drain electrode D are connected.
  • FIG. 17 is a diagram illustrating a state in which the gap between the source electrode S and the drain electrode D is cut by the cutting device 130.
  • the cutting device 130 performs cutting while adjusting the irradiation position of the laser beam LL onto the sheet substrate FB using the galvanometer mirror 131.
  • the sheet substrate FB is transported to the ⁇ Z side of the droplet applying apparatus OS.
  • the organic semiconductor layer OS is formed on the sheet substrate FB.
  • Organic semiconductor ink is ejected across the source electrode S and the drain electrode D into a region overlapping the gate electrode G on the sheet substrate FB.
  • the sheet substrate FB is conveyed to the ⁇ Z side of the heat treatment apparatus BK, and the organic semiconductor ink is dried. After the drying treatment, semiconductors included in the organic semiconductor ink are laminated in a thin film shape, and an organic semiconductor OS is formed as shown in FIG. Through the above steps, the field effect transistor and the connection wiring are formed on the sheet substrate FB.
  • the sheet substrate FB is transported to the light emitting layer forming unit 93 by the transport roller RR (see FIG. 3).
  • red, green, and blue light emitting layers IR are formed by the droplet applying device 140Re, the droplet applying device 140Gr, the droplet applying device 140Bl, and the heat treatment device BK, respectively. Since the barrier ribs BA are formed on the sheet substrate FB, even when the red, green, and blue light emitting layers IR are continuously applied without heat treatment by the heat treatment apparatus BK, the solution is applied to the adjacent pixel regions. Overflow does not cause color mixing.
  • the insulating layer I is formed on the sheet substrate FB via the droplet applying device 140I and the heat treatment device BK, and the transparent electrode IT is formed via the droplet applying device 140IT and the heat treatment device BK.
  • the organic EL element 50 shown in FIGS. 1A to 1C is formed on the sheet substrate FB.
  • an alignment operation is performed. Is going.
  • the alignment operation will be described with reference to FIG.
  • a plurality of alignment cameras CA (CA1 to CA8) provided in each unit appropriately detect the alignment mark AM formed on the sheet substrate FB, and transmit the detection result to the control unit 104.
  • the control unit 104 causes the alignment operation to be performed based on the transmitted detection result.
  • control unit 104 detects the feeding speed of the sheet substrate FB based on the imaging interval of the alignment mark AM detected by the alignment camera CA (CA1 to CA8), and whether or not the roller RR is rotating at a predetermined speed, for example. Determine whether. When it is determined that the roller RR is not rotating at a predetermined speed, the control unit 104 issues an instruction for adjusting the rotation speed of the roller RR and applies feedback.
  • control unit 104 detects whether or not the position of the alignment mark AM in the Y-axis direction is shifted based on the imaging result of the alignment mark AM, and detects whether or not the sheet substrate FB is displaced in the Y-axis direction. To do. When the misregistration is detected, the control unit 104 detects how long the misregistration continues in a state where the sheet substrate FB is conveyed.
  • the time of positional deviation corresponds by switching the nozzle 122 which apply
  • FIG. If the deviation of the sheet substrate FB in the Y-axis direction continues for a long time, the position of the sheet substrate FB in the Y-axis direction is corrected by the movement of the roller RR.
  • the control unit 104 detects whether or not the sheet substrate FB is displaced in the ⁇ Z direction based on the positions of the alignment marks AM detected by the alignment camera CA in the X-axis and Y-axis directions.
  • the control unit 104 detects how long the positional deviation continues while the sheet substrate FB is conveyed, as in the case of detecting the positional deviation in the Y-axis direction. If the positional deviation time is short, it can be dealt with by switching the nozzle 122 that applies droplets among the plurality of nozzles 122 of the droplet applying apparatus 120. If the deviation continues for a long time, the two rollers RR provided at a position sandwiching the alignment camera CA that has detected the deviation are moved in the X direction or the Y direction to correct the position of the sheet substrate FB in the ⁇ Z direction.
  • the gas layer AR is controlled to be a layer having a uniform thickness, and an alignment operation, an electrode formation operation, and a light emitting layer formation are performed.
  • the layer thickness, the formation range of the gas layer AR, the supply rate or supply amount of the gas from the pad member 41, and the like are controlled according to the processing of the substrate processing unit 102 in the above embodiment, such as the operation and the cutting operation of the sheet substrate FB. It is preferable.
  • the substrate processing apparatus 100 moves with respect to the droplet applying apparatuses 120 and 140 that perform a predetermined process on the sheet substrate FB, and the droplet applying apparatuses 120 and 140. And a suction holding plate 12 that holds the sheet substrate FB while forming the processing target surface FBc of the sheet substrate FB. Further, according to the substrate processing apparatus 100 of the present embodiment, it is possible to perform processing on the sheet substrate FB while ensuring flatness on the processing surface FBc of the sheet substrate FB. Thereby, the substrate processing apparatus 100 which can form a highly accurate pattern with respect to a flexible substrate can be provided.
  • the transport mechanism TR is configured to be long in the transport direction (X direction) with respect to the floor portion of the substrate processing apparatus 100 and short in the vertical direction (Z direction) of the transport direction.
  • the present invention is not limited to this.
  • it may be configured to be long in the Z direction.
  • the sheet substrate FB is transported along the Z direction, and the processing for the sheet substrate FB is performed in the X direction or the Y direction.
  • the present invention is not limited to this.
  • the conveyance and formation of the processing surface FBc may be performed using the suction holding plate 12 on the ⁇ Z side of the base portion 21.
  • the droplet applying device 120 of the electrode forming unit 92 performs the above-described processing on the sheet substrate FB using the + Z side suction holding plate 12 of the base 21 to apply the droplets of the light emitting layer forming unit 93.
  • the apparatus 140 performs the above-described processing on the sheet substrate FB using the suction holding plate 12 on the ⁇ Z side of the base 21. As a result, the size of the substrate processing apparatus 100 itself is reduced, and the space for placing the substrate processing apparatus 100 is saved.
  • the transport mechanism TR is provided only at a position corresponding to the droplet applying apparatuses 120 and 140.
  • the transport mechanism TR may be disposed at another position.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un appareil de traitement de substrat qui comprend : une section de traitement, qui réalise un traitement déterminé par rapport à un substrat ; et une section de support de substrat, qui se déplace par rapport à la section de traitement, et qui supporte le substrat, tout en comprenant la surface traitée du substrat en cours de formation.
PCT/JP2010/071124 2009-11-26 2010-11-26 Appareil de traitement de substrat et procédé de fabrication d'élément d'affichage WO2011065478A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CN201080048800.0A CN102666323B (zh) 2009-11-26 2010-11-26 基板处理装置以及显示元件的制造方法
KR1020187019872A KR101906129B1 (ko) 2009-11-26 2010-11-26 기판 처리 장치 및 표시 소자의 제조 방법
KR1020127009105A KR101843545B1 (ko) 2009-11-26 2010-11-26 기판 처리 장치 및 표시 소자의 제조 방법
JP2011543319A JP5887935B2 (ja) 2009-11-26 2010-11-26 基板処理装置、表示素子の製造方法および基板処理方法
KR1020187007930A KR101880017B1 (ko) 2009-11-26 2010-11-26 기판 처리 장치 및 표시 소자의 제조 방법
HK13101660.2A HK1174316A1 (en) 2009-11-26 2013-02-06 Substrate processing apparatus and method for manufacturing display element

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JP2009-268789 2009-11-26
JP2009268789 2009-11-26

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WO2011065478A1 true WO2011065478A1 (fr) 2011-06-03

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KR (3) KR101880017B1 (fr)
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JP2015510261A (ja) * 2012-01-17 2015-04-02 エーエスエムエル ネザーランズ ビー．ブイ． 柔軟性基板を搬入する方法、デバイス製造方法、柔軟性基板を搬入するための装置、及びリソグラフィ装置
KR101643679B1 (ko) * 2012-01-17 2016-07-28 에이에스엠엘 네델란즈 비.브이. 가요성 기판의 로딩 방법 및 리소그래피 장치

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CN102666323A (zh) 2012-09-12
KR20180033596A (ko) 2018-04-03
JP5887935B2 (ja) 2016-03-16
JPWO2011065478A1 (ja) 2013-04-18
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HK1174316A1 (en) 2013-06-07
KR101906129B1 (ko) 2018-10-08

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