WO2011065478A1 - Substrate processing apparatus and method for manufacturing display element - Google Patents

Abstract

Disclosed is a substrate processing apparatus which is provided with: a processing section, which performs predetermined processing with respect to a substrate; and a substrate holding section, which moves with respect to the processing section, and which holds the substrate, while having the processed surface of the substrate being formed.

Description

Substrate processing apparatus and display element manufacturing method

The present invention relates to a substrate processing apparatus and a display element manufacturing method.
This application claims priority based on Japanese Patent Application No. 2009-268789 filed in Japan on November 26, 2009, the contents of which are incorporated herein by reference.

As a display element constituting a display device such as a display device, for example, an organic electroluminescence (organic EL) element is known. The organic EL element has an anode and a cathode on a substrate and an organic light emitting layer sandwiched between the anode and the cathode. In the organic EL element, holes are injected from an anode into an organic light emitting layer to combine holes and electrons in the organic light emitting layer, and display light can be obtained by emitted light at the time of the combination. In the organic EL element, an electric circuit connected to, for example, an anode and a cathode is formed on a substrate.

As one method for producing an organic EL element, for example, a method called a roll-to-roll method (hereinafter simply referred to as “roll method”) is known (for example, see Patent Document 1). In the roll method, a single sheet-like substrate wound around a substrate supply side roller is sent out, and the substrate is transported while being wound up by a substrate recovery side roller. In the processing apparatus, a light emitting layer, an anode, a cathode, an electric circuit, and the like constituting an organic EL element are sequentially formed on a substrate in a processing apparatus.

International Publication No. 2006/100868 Pamphlet

However, in such a roll system, for example, when a substrate having a small plate thickness is used, there is a problem that it is difficult to ensure the flatness of the substrate. For this reason, the improvement of the processing precision in formation processing, alignment processing, etc. of a light emitting layer, an electrode, etc. was prevented.

An object according to the present invention is to provide a substrate processing apparatus and a display element manufacturing method excellent in processing accuracy.

A substrate processing apparatus according to an aspect of the present invention includes a processing unit that performs predetermined processing on a substrate, and a substrate holding unit that moves relative to the processing unit and holds a substrate while forming a surface to be processed of the substrate. With.

A display element manufacturing method according to an aspect of the present invention includes a processing step of performing a predetermined process on a surface to be processed of a substrate, and a substrate holding step of holding the substrate while forming the surface to be processed of the substrate by the substrate holding portion. And a moving step of moving the substrate holding portion disposed on the endless support member in the substrate transport direction.

According to the aspect of the present invention, it is possible to provide a substrate processing apparatus and a display element manufacturing method with excellent processing accuracy.

The block diagram of an organic EL element. FIG. 1B is a bb cross-sectional view of the organic EL element in FIG. 1A. FIG. 1C is a cc cross-sectional view of the organic EL element in FIG. 1A. The figure which shows the structure of a substrate processing apparatus. The figure which shows the structure of a board | substrate process part. The figure which shows the structure of a droplet application apparatus. The figure which shows the structure of a conveyance mechanism. The figure which shows the structure of a conveyance mechanism. The figure which shows the structure of a conveyance mechanism. The figure which shows the structure of a conveyance mechanism. The figure which shows the structure of a conveyance mechanism. The figure which shows the process of the partition formation of a board | substrate process part. The figure which shows the shape and arrangement | positioning of the partition formed in a sheet | seat board | substrate. Sectional drawing of the partition formed in a sheet | seat board | substrate. The figure which shows the application | coating operation | movement of a droplet. Sectional drawing of the droplet apply | coated between partition walls. Sectional drawing of the thin film formed between partition walls. The figure which shows the structure of the thin film formed between partition walls. The figure which shows the process of forming a gate insulating layer in a sheet | seat board | substrate. The figure which shows the process of cut | disconnecting the wiring of a sheet | seat board | substrate. The figure which shows the process of forming a thin film in a source-drain formation area. The figure which shows the process of forming an organic-semiconductor layer. The figure which shows an example of alignment. The figure which shows operation | movement of a conveyance mechanism. The figure which shows the modification of a conveyance mechanism.

[First Embodiment]
Hereinafter, a first embodiment according to the present invention will be described with reference to the drawings.
(Organic EL device)
FIG. 1A is a plan view showing a configuration of an organic EL element. 1B is a cross-sectional view taken along line bb in FIG. 1A. 1C is a cross-sectional view taken along the line cc in FIG. 1A.

As shown in FIGS. 1A to 1C, in the organic EL element 50, after the gate electrode G and the gate insulating layer I are formed on the sheet substrate FB, and the source electrode S, the drain electrode D, and the pixel electrode P are further formed, A bottom contact type in which an organic semiconductor layer OS is formed.

As shown in FIG. 1B, a gate insulating layer I is formed on the gate electrode G. A source electrode S of the source bus line SBL is formed on the gate insulating layer I, and a drain electrode D connected to the pixel electrode P is formed. An organic semiconductor layer OS is formed between the source electrode S and the drain electrode D. This completes the field effect transistor. Further, as shown in FIGS. 1B and 1C, a light emitting layer IR is formed on the pixel electrode P, and a transparent electrode ITO is formed on the light emitting layer IR.

As shown in FIGS. 1B and 1C, for example, a partition wall BA (bank layer) is formed on the sheet substrate FB. As shown in FIG. 1C, source bus lines SBL are formed between the barrier ribs BA. Thus, the presence of the partition BA allows the source bus line SBL to be formed with high accuracy, and the pixel electrode P and the light emitting layer IR to be accurately formed. Although not shown in FIGS. 1B and 1C, the gate bus line GBL is also formed between the partition walls BA in the same manner as the source bus line SBL.

The organic EL element 50 is suitably used for a display device such as a display device and a display unit of an electronic device. In this case, for example, an organic EL element 50 formed in a panel shape is used. In manufacturing such an organic EL element 50, it is necessary to form a substrate on which a thin film transistor (TFT) and a pixel electrode are formed. In order to accurately form one or more organic compound layers (light-emitting element layers) including a light-emitting layer on the pixel electrode on the substrate, a partition BA (bank layer) is easily and accurately formed in the boundary region of the pixel electrode. It is desirable.

(Substrate processing equipment)
FIG. 2 is a schematic diagram illustrating a configuration of a substrate processing apparatus 100 that performs processing using a flexible sheet substrate FB.
The substrate processing apparatus 100 is an apparatus that forms the organic EL element 50 shown in FIGS. 1A to 1C using a belt-shaped sheet substrate FB. As illustrated in FIG. 2, the substrate processing apparatus 100 includes a substrate supply unit 101, a substrate processing unit 102, a substrate collection unit 103, and a control unit 104. The sheet substrate FB is transported from the substrate supply unit 101 to the substrate recovery unit 103 via the substrate processing unit 102. The control unit 104 controls the overall operation of the substrate processing apparatus 100.

In the following description, an XYZ orthogonal coordinate system is set, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. In the horizontal plane, the sheet substrate FB is conveyed in the X-axis direction, in the horizontal plane the direction orthogonal to the X-axis direction is the Y-axis direction, and the direction orthogonal to the X-axis direction and the Y-axis direction (that is, the vertical direction) is Z. Axial direction. Further, the rotation (inclination) directions around the X axis, Y axis, and Z axis are the θX, θY, and θZ directions, respectively.

As the sheet substrate FB, for example, a heat-resistant resin film, stainless steel, or the like can be used. For example, the resin film is made of polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin, polystyrene resin, vinyl acetate resin, etc. Can be used. The dimension in the Y direction of the sheet substrate FB is, for example, about 1 m to 2 m, and the dimension in the X direction is, for example, 10 m or more. Of course, this dimension is only an example and is not limited thereto. For example, the dimension in the Y direction of the sheet substrate FB may be 50 cm or less, or 2 m or more. Moreover, the dimension of the X direction of the sheet | seat board | substrate FB may be 10 m or less. Note that the flexibility in the present embodiment refers to the property that the substrate can be bent without being broken or broken even when a predetermined force of at least its own weight is applied to the substrate. The flexibility varies depending on the material, size, thickness, environment such as temperature, etc. of the substrate.

The sheet substrate FB preferably has a smaller coefficient of thermal expansion so that the dimensions do not change even when subjected to heat of about 200 ° C., for example. For example, an inorganic filler can be mixed with a resin film to reduce the thermal expansion coefficient. Examples of the inorganic filler include titanium oxide, zinc oxide, alumina, silicon oxide and the like.

The substrate supply unit 101 is connected to a supply side connection unit 102 </ b> A provided in the substrate processing unit 102. The substrate supply unit 101 supplies, for example, the sheet substrate FB wound in a roll shape to the substrate processing unit 102. The substrate recovery unit 103 recovers the sheet substrate FB that has been processed by the substrate processing unit 102. Note that the substrate supply unit 101 is not limited to the configuration in which the sheet substrate FB is accommodated in a rolled state, and for example, the sheet substrate FB is accommodated in a state in which the sheet substrate FB is folded several times. It doesn't matter. Note that the folded state includes a state in which no crease is formed and the substrate is not broken or broken even when a predetermined force of at least about its own weight is applied to the substrate.

FIG. 3 is a diagram illustrating a configuration of the substrate processing unit 102.
As shown in FIG. 3, the substrate processing unit 102 includes a transport unit 105, an element forming unit 106, an alignment unit 107, and a substrate cutting unit 108. The substrate processing unit 102 forms each component of the organic EL element 50 on the sheet substrate FB while conveying the sheet substrate FB supplied from the substrate supply unit 101, and the sheet on which the organic EL element 50 is formed. This is the part that sends out the substrate FB to the substrate recovery unit 103.

The element forming unit 106 includes a partition forming unit 91, an electrode forming unit 92, and a light emitting layer forming unit 93. The partition wall forming portion 91, the electrode forming portion 92, and the light emitting layer forming portion 93 are arranged in the order of the partition wall forming portion 91, the electrode forming portion 92, and the light emitting layer forming portion 93 from the upstream side to the downstream side in the transport direction of the sheet substrate FB. ing. Hereinafter, each structure of the element formation part 106 is demonstrated.

The partition wall forming unit 91 includes an imprint roller 110 and a thermal transfer roller 115. The partition forming unit 91 forms the partition BA on the sheet substrate FB sent from the substrate supply unit 101. In the partition wall forming unit 91, the sheet substrate FB is pressed by the imprint roller 110, and the sheet substrate FB is heated to the glass transition point or more by the thermal transfer roller 115 so that the pressed partition wall BA maintains its shape. Therefore, the mold shape formed on the roller surface of the imprint roller 110 is transferred to the sheet substrate FB. The sheet substrate FB is heated to, for example, about 200 ° C. by the thermal transfer roller 115.

The roller surface of the imprint roller 110 is mirror-finished, and a fine imprint mold 111 made of a material such as SiC or Ta is attached to the roller surface. The fine imprint mold 111 forms a thin film transistor wiring stamper and a color filter stamper.

The imprint roller 110 forms the alignment mark AM on the sheet substrate FB using the fine imprint mold 111. In order to form alignment marks AM on both sides in the Y-axis direction, which is the width direction of the sheet substrate FB, the fine imprint mold 111 has a stamper for the alignment marks AM.

The electrode forming portion 92 is provided on the + X side of the partition wall forming portion 91, and for example, a thin film transistor using an organic semiconductor is formed. Specifically, after forming the gate electrode G, the gate insulating layer I, the source electrode S, the drain electrode D, and the pixel electrode P as shown in FIGS. 1A to 1C, the organic semiconductor layer OS is formed.

The thin film transistor (TFT) may be an inorganic semiconductor type or an organic semiconductor type. As an inorganic semiconductor thin film transistor, an amorphous silicon type is known, but a thin film transistor using an organic semiconductor may be used. If a thin film transistor is formed using this organic semiconductor, the thin film transistor can be formed by utilizing a printing technique or a droplet coating technique. Of the thin film transistors using organic semiconductors, field effect transistors (FETs) as shown in FIGS. 1A to 1C are particularly preferable.

The electrode forming unit 92 includes a droplet applying device 120, a heat treatment device BK, a cutting device 130, and the like.
In this embodiment, as the droplet applying device 120, for example, a droplet applying device 120G used when forming the gate electrode G, a droplet applying device 120I used when forming the gate insulating layer I, the source electrode S, A droplet applying device 120SD used when forming the drain electrode D and the pixel electrode P, a droplet applying device 120OS used when forming the organic semiconductor OS, and the like are used.

FIG. 4 is a plan view showing the configuration of the droplet applying apparatus 120. FIG. 4 shows a configuration when the droplet applying device 120 is viewed from the + Z side. The droplet applying device 120 is formed long in the Y-axis direction. The droplet applying device 120 is provided with a driving device (not shown). The droplet applying device 120 can be moved, for example, in the X direction, the Y direction, and the θZ direction by the driving device.

A plurality of nozzles 122 are formed in the droplet applying device 120. The nozzle 122 is provided on the surface of the droplet applying device 120 that faces the sheet substrate FB. The nozzles 122 are arranged, for example, along the Y-axis direction, and two rows (nozzle rows) of the nozzles 122 are formed, for example. The control unit 104 can apply the droplets to all the nozzles 122 at once, and can individually adjust the timing of applying the droplets to each nozzle 122.

As the droplet applying device 120, for example, an inkjet method or a dispenser method can be employed. Examples of the inkjet method include a charge control method, a pressure vibration method, an electromechanical conversion method, an electrothermal conversion method, and an electrostatic suction method. In the droplet coating method, the use of the material is less wasteful, and a desired amount of the material can be accurately disposed at a desired position. The amount of one drop of metal ink applied by the droplet application method is, for example, 1 to 300 nanograms.

Referring back to FIG. 3, the droplet applying device 120G applies metal ink into the partition wall BA of the gate bus line GBL. The droplet applying device 120I applies an electrically insulating ink of polyimide resin or urethane resin to the switching unit. The droplet applying device 120SD applies metal ink in the partition BA of the source bus line SBL and in the partition BA of the pixel electrode P. The droplet applying device 120OS applies the organic semiconductor ink to the switching unit between the source electrode S and the drain electrode D.

Metal ink is a liquid in which a conductor having a particle diameter of about 5 nm is stably dispersed in a solvent at room temperature, and carbon, silver (Ag), gold (Au), or the like is used as the conductor. The compound forming the organic semiconductor ink may be a single crystal material family or an amorphous material, and may be a low molecule or a polymer. Particularly preferred among the compounds forming the organic semiconductor ink include a single crystal or π-conjugated polymer of a condensed ring aromatic hydrocarbon compound typified by pentacene, triphenylene, anthracene and the like.

The heat treatment apparatus BK is disposed on the + X side (downstream side in the substrate transport direction) of each droplet applying apparatus 120. The heat treatment apparatus BK can radiate, for example, hot air or far infrared rays to the sheet substrate FB. The heat treatment apparatus BK uses these radiant heats to dry or bake (bake) the droplets applied to the sheet substrate FB and harden them.

The cutting device 130 is provided on the + X side of the droplet applying device 120SD and on the upstream side of the droplet applying device 120OS. The cutting device 130 cuts the source electrode S and the drain electrode D formed by the droplet applying device 120SD using, for example, laser light. The cutting device 130 includes a light source (not shown) and a galvanometer mirror 131 that irradiates the laser light from the light source onto the sheet substrate FB.

As the type of laser light, a laser having a wavelength to be absorbed is preferable for the metal film to be cut. Further, by using a pulsed laser, thermal diffusion can be prevented and damage other than the cut portion can be reduced. When the material is aluminum, a femtosecond laser with a wavelength of 760 nm is preferable.

In this embodiment, for example, a femtosecond laser irradiation unit using a titanium sapphire laser as a light source is used. The femtosecond laser irradiation unit irradiates the laser beam LL with a pulse of 10 KHz to 40 KHz, for example.

In this embodiment, since a femtosecond laser is used, processing on the order of submicron is possible, and the distance between the source electrode S and the drain electrode D that determines the performance of the field effect transistor can be accurately cut. ing. The distance between the source electrode S and the drain electrode D is, for example, about 3 μm to about 30 μm.

In addition to the femtosecond laser described above, for example, a carbon dioxide laser or a green laser can be used. Moreover, it is good also as a structure cut | disconnected mechanically with a dicing saw etc. besides a laser.

The galvanometer mirror 131 is disposed in the optical path of the laser beam LL. The galvanometer mirror 131 reflects the laser beam LL from the light source onto the sheet substrate FB. The galvanometer mirror 131 is provided to be rotatable in the θX direction, the θY direction, and the θZ direction, for example. As the galvano mirror 131 rotates, the irradiation position of the laser beam LL changes.

By using both the partition wall formation portion 91 and the electrode formation portion 92, a thin film transistor or the like can be formed by utilizing a printing technique or a droplet coating method technique without using a so-called photolithography process. Yes. For example, when only the electrode forming portion 92 using a printing technique, a droplet coating technique, or the like is used, there is a case where a thin film transistor or the like cannot be accurately performed due to ink bleeding and spreading.

On the other hand, since the partition wall BA is formed by using the partition wall forming portion 91, ink bleeding and spreading are prevented. The distance between the source electrode S and the drain electrode D that determines the performance of the thin film transistor is formed by laser processing or machining.

The light emitting layer forming portion 93 is disposed on the + X side of the electrode forming portion 92. The light emitting layer forming unit 93 forms, for example, the light emitting layer IR and the pixel electrode ITO which are components of the organic EL device on the sheet substrate FB on which the electrodes are formed. The light emitting layer forming unit 93 includes a droplet applying device 140 and a heat treatment device BK.

The light emitting layer IR formed by the light emitting layer forming portion 93 contains a host compound and a phosphorescent compound (also referred to as a phosphorescent compound). The host compound is a compound contained in the light emitting layer. A phosphorescent compound is a compound in which light emission from an excited triplet is observed and emits phosphorescence at room temperature.

In the present embodiment, as the droplet applying device 140, for example, a droplet applying device 140Re that forms a red light emitting layer, a droplet applying device 140Gr that forms a green light emitting layer, a droplet applying device 140Bl that forms a blue light emitting layer, an insulating material. A droplet applying device 140I that forms a layer, a droplet applying device 140IT that forms a pixel electrode ITO, and the like are used.

As the droplet applying device 140, an ink jet method or a dispenser method can be adopted as in the case of the droplet applying device 120 described above. When providing, for example, a hole transport layer and an electron transport layer as components of the organic EL element 50, a device for forming these layers (for example, a droplet applying device) is separately provided.

The droplet applying device 140Re applies the R solution onto the pixel electrode P. In the droplet applying device 140Re, the discharge amount of the R solution is adjusted so that the film thickness after drying becomes 100 nm. As the R solution, for example, a solution obtained by dissolving a red dopant material in 1,2-dichloroethane in polyvinyl carbazole (PVK) as a host material is used.

The droplet applying device 140Gr applies the G solution onto the pixel electrode P. As the G solution, for example, a solution in which a green dopant material is dissolved in 1,2-dichloroethane in a host material PVK is used.

The droplet applying device 140B1 applies the B solution onto the pixel electrode P. As the solution B, for example, a solution in which a blue dopant material is dissolved in 1,2-dichloroethane in a host material PVK is used.

The droplet applying device 120I applies an electrically insulating ink to a part of the gate bus line GBL or the source bus line SBL. As the electrically insulating ink, for example, polyimide resin or urethane resin ink is used.

The droplet applying device 120IT applies ITO (Indium Tin Oxide) ink on the red, green, and blue light emitting layers. As the ITO ink, a compound in which several percent of tin oxide (SnO ₂ ) is added to indium oxide (In ₂ O ₃ ) is used. Alternatively, an amorphous material such as IDIXO (In ₂ O ₃ —ZnO) capable of forming a transparent conductive film may be used. The transparent conductive film preferably has a transmittance of 90% or more.

The heat treatment apparatus BK is disposed on the + X side (downstream side in the substrate transport direction) of each droplet applying apparatus 140. The heat treatment apparatus BK can emit hot air, far-infrared rays, and the like to the sheet substrate FB, similarly to the heat treatment apparatus BK used in the electrode forming unit 92. The heat treatment apparatus BK uses these radiant heats to dry or bake (bake) the droplets applied to the sheet substrate FB and harden them.

The transport unit 105 includes a plurality of rollers RR and a transport mechanism TR disposed at positions along the X direction. As the roller RR rotates, the sheet substrate FB is conveyed in the X-axis direction. The roller RR may be a rubber roller that sandwiches the sheet substrate FB from both sides, or may be a roller RR with a ratchet as long as the sheet substrate FB has perforation. Among the plurality of rollers RR, some of the rollers RR are movable in the Y-axis direction orthogonal to the transport direction. The transport mechanism TR is disposed at a position corresponding to the electrode forming portion 92 and the light emitting layer forming portion 93 in the element forming portion 106 in the X direction.

Alignment unit 107 has a plurality of alignment cameras CA (CA1 to CA8) provided along the X direction. The alignment camera CA may pick up an image with CCD or CMOS under visible light illumination, process the picked-up image to detect the position of the alignment mark AM, or irradiate the alignment mark AM with the laser light and scatter the light. Even if light is received, the position of the alignment mark AM may be detected.

The alignment camera CA1 is disposed on the + X side of the thermal transfer roller 115. The alignment camera CA1 detects the position of the alignment mark AM formed by the thermal transfer roller 115 on the sheet substrate FB. The alignment cameras CA2 to CA8 are respectively arranged on the + X side of the heat treatment apparatus BK. Alignment cameras CA2 to CA8 detect the position of alignment mark AM on sheet substrate FB that has passed through heat treatment apparatus BK.

The sheet substrate FB may expand and contract in the X axis direction and the Y axis direction through the thermal transfer roller 115 and the heat treatment apparatus BK. By disposing the alignment camera CA on the + X side of the thermal transfer roller 115 that performs heat treatment or on the + X side of the heat treatment apparatus BK in this way, it is possible to detect the positional deviation of the sheet substrate FB due to thermal deformation or the like. Yes.

The detection results from the alignment cameras CA1 to CA8 are transmitted to the control unit 104. Based on the detection results of the alignment cameras CA1 to CA8, the control unit 104 adjusts, for example, the ink application position and timing of the droplet application device 120 and the droplet application device 140, and supplies the sheet substrate FB from the substrate supply unit 101. Adjustment of the speed and the conveyance speed of the roller RR, adjustment of movement in the Y direction by the roller RR, adjustment of the cutting position and timing of the cutting device 130, and the like are performed.

(Transport mechanism)
Next, the configuration of the transport mechanism TR provided in the substrate processing unit 102 will be described. FIG. 5 is a diagram illustrating a configuration of the transport mechanism TR. The plurality of transport mechanisms TR shown in FIG. 3 have the same configuration. For this reason, in FIG. 5, the transport mechanism TR disposed corresponding to the droplet applying device 120 among the plurality of transport mechanisms TR will be described as an example.

As shown in FIG. 5, the transport mechanism TR includes a belt mechanism 10, a belt driving mechanism 20, and an air pad mechanism 40. The belt mechanism 10 and the belt driving mechanism 20 are disposed on the −Z side with respect to the sheet substrate FB. The air pad mechanism 40 is disposed on the + Z side with respect to the sheet substrate FB.

The belt mechanism 10 is disposed around the belt drive mechanism 20 along the θY direction. The belt mechanism 10 includes a rotating unit 11 and a suction holding plate (substrate holding unit) 12. The rotating part 11 is configured by connecting a plurality of support members 13 in an endless manner. Specifically, support members 13 adjacent to each other in the θY direction are connected to each other by a common shaft member 14 so as to be rotatable. This configuration is provided continuously in the θY direction, and the rotating portion 11 is formed in an endless shape. The belt mechanism 10 is provided so as to be rotatable in the θY direction by the belt drive mechanism 20.

The adsorption holding plate 12 is provided on the outer peripheral surface of each support member 13. The suction holding plate 12 is a plate-like member formed in a rectangular shape, for example. The suction holding plate 12 has a suction holding surface 12a that sucks and holds the sheet substrate FB. The suction holding surface 12 a is provided outside the belt mechanism 10.

FIG. 6 is a diagram when the transport mechanism TR is viewed from the + Z side. As shown in FIG. 6, the suction holding plate 12 is formed so as to protrude in the Y direction with respect to the sheet substrate FB. As shown in FIGS. 5 and 6, the transport mechanism TR holds the sheet substrate FB by the four suction holding plates 12 (S) at the center in the X direction.

7 and 8 are diagrams showing the configuration of one suction holding plate 12. FIG. 7 is a view when the suction holding plate 12 is viewed from the + Z side, and FIG. 8 is a view showing the configuration of the AA ′ cross section in FIG.

7 and 8, the suction holding plate 12 has a configuration in which a holding member 15 and a suction pad 16 are arranged on a support plate 17, respectively. The holding member 15 is disposed substantially at the center of the support plate 17 in the Y direction, and is formed to have a dimension that covers the processing target FBA of the sheet substrate FB shown in FIG. 7 in the Y direction. Therefore, at least the portion to be processed FBA of the sheet substrate FB is held by the holding member 15.

7 and 8, the surface on the + Z side of the holding member 15 is a holding surface 15a for holding the sheet substrate FB. The holding member 15 is formed so that the holding surface 15a is flat. For this reason, the to-be-processed part FBA of the sheet | seat board | substrate FB hold | maintained at the holding surface 15a is hold | maintained flat by the holding surface 15a.

The suction pads 16 are arranged one by one on both end sides in the Y direction with respect to the holding member 15. The suction pad 16 sucks a position of the sheet substrate FB that deviates from the processed portion FBA toward the edge in the Y direction (for example, a position other than the processed portion FBA of the sheet substrate FB).

The suction pad 16 is held by a pad support member 17b and is configured to have a negative pressure on the suction surface 16a on the + Z side in FIGS. The suction pad 16 vacuum-sucks the sheet substrate FB with the suction surface 16a. As an example, the −Z side of the suction pad 16 is connected to a pad support member 17 b and a pipe 16 b formed in the support plate 17, and the pipe 16 b is connected to a pipe 17 c outside the support plate 17. . The pipe 17c is connected to a pump mechanism 18 shown in FIG. 9, and the suction surface 16a is formed at a negative pressure by the pump mechanism 18.

The suction surface 16a is formed so as to be flush with the holding surface 15a of the holding member 15. Accordingly, the suction holding surface 12a formed by the suction holding plate 12 is formed by the holding surface 15a and the suction surface 16a formed to be flush with each other. The sheet substrate FB is adsorbed on the adsorption surfaces 16a provided at both ends in the Y direction of the adsorption holding surface 12a, and is not adsorbed on the central holding surface 15a in the Y direction.

The pad support member 17b is provided so as to be movable in the Y direction by the Y direction actuator 17a. With this configuration, the position of the suction pad 16 in the Y direction can be moved in the Y direction.

With this configuration, for example, the sheet substrate FB is sucked by the two suction pads 16, the + Y side suction pad 16 is moved in the + Y direction, and the −Y side suction pad 16 is moved in the −Y direction. Tension can be applied to the sheet substrate FB in the Y direction while maintaining the holding state on the holding surface 15a.

FIG. 9 is a cross-sectional view showing the configuration of the pump mechanism 18 connected to the suction pad 16.
As shown in FIG. 9, the pump mechanism 18 includes a fixed cylindrical shaft 30, a rotating cylinder 31, and a suction pump 32.

The fixed cylindrical shaft 30 is formed in a cylindrical shape as viewed in the Y direction, and is held in a fixed position. The fixed cylindrical shaft 30 has a convex portion 30a, a suction supply port 30b, and an air release port 30c. Two convex portions 30 a are provided on the + Z side of the outer surface of the fixed cylindrical shaft 30. The convex portions 30 a are provided along the Y direction across both ends of the fixed cylindrical shaft 30 in the Y direction.

The suction supply port 30 b is an opening formed along the Y direction inside the fixed cylindrical shaft 30, and is connected to the suction pump 32. The suction supply port 30b is provided with a branch portion 30d formed in the + Z direction in the drawing. The branch portion 30d is formed so as to be connected between the two convex portions 30a. For this reason, the suction action of the suction pump 32 extends between the two convex portions 30a via the suction supply port 30b and the branch portion 30d. The atmosphere release port 30c is formed between both ends of the fixed cylindrical shaft 30 in the Y direction, and is connected to the atmosphere at both ends. The air release port 30c has a branch portion 30e. The branch part 30e is connected to a position deviated from between the two convex parts 30a.

The rotating cylinder 31 is provided so as to surround the fixed cylindrical shaft 30. The rotating cylinder 31 is disposed with a certain gap between the rotating cylinder 31 and the fixed cylindrical shaft 30 via spacers 33 provided at both ends in the Y direction, for example. The inner surface of the rotating cylinder 31 is in contact with the two convex portions 30 a of the fixed cylindrical shaft 30 through the spacer 33 without any gap. For this reason, the space between the outer surface of the fixed cylindrical shaft 30 and the inner surface of the rotating cylinder 31 is in a state divided into the space S1 and the space S2 by the two convex portions 30a. Among these, the space S1 is sucked by the suction pump 32, and the space S2 is always released to the atmosphere.

The rotary cylinder 31 is provided with a plurality of openings 31a along the θY direction. Each opening 31a is connected to the pipe 16c. Of the plurality of openings 31 a, the opening 31 a connected to the space S <b> 1 is sucked by the suction pump 32. The rotating cylinder 31 is rotated in accordance with the rotational speed of the belt mechanism 10 by a rotating mechanism (not shown), and the sucked opening 31a is switched with rotation. In the present embodiment, the suction action is exerted on the openings 31a connected to the four rotating parts 11 that support the sheet substrate FB.

Further, in order to make the delivery of the sheet substrate FB smooth, the pump mechanism 18 performs suction before the suction holding plate 12 closest to the −θY side among the four suction holding plates 12 reaches the position holding the sheet substrate FB. It is preferable that the suction holding plate 12 on the most + Y side is removed from the position where the sheet substrate FB is held and suction is released (released to the atmosphere) at the same time.

Returning to FIG. 5, the belt drive mechanism 20 includes a base portion 21, a belt pressing portion 22, and a belt pressing actuator 23. The base 21 is fixed with respect to other parts (for example, a floor part or a surface plate part) of the substrate processing part 102 so that the position does not fluctuate. A plurality of belt pressing portions 22 are arranged along the θY direction with respect to the base portion 21, and the rotation portions 11 corresponding to the respective suction holding plates 12 of the belt mechanism 10 are routed (for example, the rotation route of the rotation portion 11 or The outer periphery of the rotating belt mechanism 10 or the like is provided so as to press outward. The belt mechanism 10 is supported by the plurality of belt pressing portions 22. The front end of the belt pressing portion 22 is in contact with the belt mechanism 10 via a roller that can rotate in the θY direction.

A plurality of belt pressing portions 22 are provided along the rotation direction of the belt mechanism 10. The plurality of belt pressing portions 22 are arranged according to the pitch of the suction holding plate 12. As an example, four belt pressing portions 22 are arranged on the + Z side of the base portion 21 so as to press one by one against the four suction holding plates 12 that hold the sheet substrate FB. Furthermore, four belt pressing portions 22 are arranged on the + X side and the −X side of the base portion 21 so that the belt mechanism 10 does not bend. Among the plurality of belt pressing portions 22, for example, four belt pressing portions 22 arranged on the + Z side of the base portion 21 are respectively connected to the belt pressing actuator 23. These belt pressing portions 22 are provided by a belt pressing actuator 23 so as to be movable in the Z direction in the figure. For this reason, the four adsorption | suction holding plates 12 arrange | positioned at the + Z side of the base 21 are pressed by the + Z side. The four suction holding plates 12 are disposed at a position where the droplet applying device 120 is processed and in the vicinity thereof. For this reason, the suction holding plate 12 is pressed by the belt pressing unit 22 at least at the processing position of the droplet applying device 120. Further, the eight belt pressing portions 22 disposed on the + X side and the −X side of the base portion 21 are fixed to the base portion 21, respectively. In addition, as an example, the belt pressing part 22 may be comprised with the member which has high rigidity, and may be comprised with an elastic member like a spring.

The air pad mechanism 40 (gas layer forming part) includes a pad member 41, an airflow adjusting mechanism 42, and a pipe 43. For example, one pad member 41 is provided on the upstream side (+ X side) and the downstream side (−X side) of the droplet applying device 120. Each pad member 41 is provided with a plurality of gas ejection ports 41a for ejecting gas (eg, air, inert gas such as nitrogen) on the −Z side, and a plurality of gas suction ports 41b for sucking gas. . The gas ejection port 41 a and the gas suction port 41 b are connected to the airflow adjustment mechanism 42 via the pipe 43, respectively. The air flow adjusting mechanism 42 adjusts the ejection amount of the gas ejection port 41a and the suction amount of the gas suction port 41b. By adjusting the ejection amount and the suction amount by the air flow adjusting mechanism 42, a gas layer (gas layer or receiving portion) is formed on the −Z side of the pad member 41 with a constant layer thickness in the Z direction. It is like that.

As shown in FIG. 3, in the light emitting layer forming unit 93, the transport mechanism TR is disposed across the droplet applying apparatuses 140R, 140G, and 140B. However, the present invention is not limited to this configuration. The TR may be configured to be provided individually for each of the droplet applying apparatuses 140R, 140G, and 140B, or may be configured to extend over two of the three droplet applying apparatuses 140. .

In addition, in the electrode forming unit 92 of FIG. 3, the transport mechanism TR is individually provided for the droplet applying apparatuses 120G, 120I, and 120SD, but is not limited to this configuration. The configuration may be such that the droplet coating apparatuses 120G, 120I, and 120SD are disposed across two droplet coating apparatuses 120, or the two droplet coating apparatuses 120 may be disposed across two.

(Operation of substrate processing equipment)
Next, the operation of the substrate processing apparatus 100 configured as described above will be described.
As shown in FIG. 2, the substrate processing apparatus 100 forms elements on the sheet substrate FB in the substrate processing unit 102 while supplying the sheet substrate FB from the substrate supply unit 101 to the substrate processing unit 102. . In the substrate processing unit 102, as shown in FIG. 3, the sheet substrate FB is transported by the roller RR and the transport mechanism TR.

The control unit 104 adjusts the rotation speed of each roller RR in the substrate processing unit 102 and the rotation speed of the belt mechanism 10 of the transport mechanism TR according to the supply speed of the sheet substrate FB supplied from the substrate supply unit 101. To do. In addition, the control unit 104 detects whether or not the roller RR is displaced in the Y-axis direction, and when it is displaced, moves the roller RR to correct the position. Further, the control unit 104 causes the position correction of the sheet substrate FB to be performed by moving the roller RR.

The sheet substrate FB supplied from the substrate supply unit 101 to the substrate processing unit 102 is first transported to the partition wall forming unit 91. In the partition forming part 91, the sheet substrate FB is sandwiched and pressed between the imprint roller 110 and the thermal transfer roller 115, and the partition BA and the alignment mark AM are formed on the sheet substrate by thermal transfer.

FIG. 10 is a view showing a state in which the partition walls BA and the alignment marks AM are formed on the sheet substrate FB. FIG. 11 is an enlarged view of a part of FIG. FIG. 12 is a diagram showing a configuration along a section DD ′ in FIG. 10 and 11 show a state when the sheet substrate FB is viewed from the + Z side.

As shown in FIG. 10, the partition wall BA is formed in the element formation region 60 at the center in the Y direction of the sheet substrate FB. As shown in FIG. 11, by forming the partition wall BA, the element formation region 60 includes a region for forming the gate bus line GBL and the gate electrode G (gate formation region 52), the source bus line SBL, the source electrode S, A region for forming the drain electrode D and the anode P (source / drain formation region 53) is partitioned. As shown in FIG. 12, the gate formation region 52 is formed in a trapezoidal shape in a cross-sectional view. Although not shown, the source / drain formation region 53 has the same shape. The width W (μm) in the partition wall BA is the line width of the gate bus line GBL. The width W is preferably about 2 to 4 times the droplet diameter d (μm) applied from the droplet applying apparatus 120G.

Note that the cross-sectional shapes of the gate formation region 52 and the source / drain formation region 53 are V-shaped or U-shaped in cross-section so that the sheet substrate FB is easily peeled after the fine imprint mold 111 presses the sheet substrate FB. It is preferable to have a shape. As other shapes, for example, a rectangular shape in a sectional view may be used.

On the other hand, as shown in FIG. 10, a pair of alignment marks AM is formed in the edge regions 61 at both ends in the Y direction of the sheet substrate FB. The partition wall BA and the alignment mark AM are formed at the same time because the mutual positional relationship is important. As shown in FIG. 11, a predetermined distance PY between the alignment mark AM and the gate formation region 52 is defined in the Y-axis direction, and the alignment mark AM and the source / drain formation region 53 are defined in the X-axis direction. A predetermined distance PX is defined. Therefore, based on the positions of the pair of alignment marks AM, it is possible to detect the deviation in the X-axis direction, the deviation in the Y-axis direction, and the θ rotation of the sheet substrate FB.

10 and 11, a pair of alignment marks AM is provided for each of the plurality of rows of barrier ribs BA in the X-axis direction. However, the present invention is not limited to this. For example, the alignment mark AM is provided for each row of barrier ribs BA. Anyway. If there is a space in the sheet substrate FB, the alignment mark AM may be provided not only in the edge region 61 of the sheet substrate FB but also in the element formation region 60. 10 and 11, the alignment mark AM has a cross shape, but may have another mark shape such as a circular mark or an oblique straight mark.

Subsequently, the sheet substrate FB is conveyed to the electrode forming unit 92 by the conveying roller RR. In the electrode forming section 92, droplets are applied by each droplet applying device 120, and electrodes are formed on the sheet substrate FB.

The control unit 104 operates the air pad mechanism 40 of the transport mechanism TR and the pump mechanism 18 before the sheet substrate FB is transported to the transport mechanism TR. By this operation, an air layer AR (see FIG. 20) having a constant thickness is formed on the −Z side of the pad member 41, and the suction operation on the suction pad 16 of the rotating unit 11 is started.

In this state, when the sheet substrate FB is conveyed to the conveyance mechanism TR, the sheet substrate FB is adsorbed to the adsorption surface 16a by the adsorption pad 16 and is held on the holding surface 15a of the holding member 15. Therefore, the sheet substrate FB is held by the suction holding surface 12a. The control unit 104 applies tension to the sheet substrate FB to increase the flatness of the sheet substrate FB by moving the pad support member 17b in the Y direction as necessary.

After applying tension to the sheet substrate FB, the control unit 104 moves the belt pressing unit 22 to the + Z side as shown in FIG. 20, and the sheet substrate is placed on the gas layer AR formed on the −Z side of the pad member 41. Press FB. In this operation, the sheet substrate FB is pressed to the −Z side also on the pad member 41 side by the reaction. In this way, the surface ARc on the −Z side of the gas layer AR is used as a reference surface, and the sheet substrate FB is sandwiched between the gas layer AR and the suction holding surface 12a, so that the flatness of the processing surface FBc of the sheet substrate FB is improved. Will be maintained. The control unit 104 conveys the sheet substrate FB in the + X direction by rotating the belt mechanism 10 while maintaining flatness on the processing surface FBc of the sheet substrate FB. Thereafter, the control unit 104 causes the same operation to be performed in the transport mechanism TR on the downstream side of the substrate processing unit 102.

In this manner, the control unit 104 starts the operation of the droplet applying device 120 while maintaining the flatness of the processing surface FBc of the sheet substrate FB. For example, first, the gate bus line GBL and the gate electrode G are formed on the sheet substrate FB by the droplet applying device 120G. 13A and 13B are views showing a state of the sheet substrate FB on which droplet application is performed by the droplet applying apparatus 120G.

As shown in FIG. 13A, the droplet applying device 120G applies metal ink to the gate forming region 52 of the sheet substrate FB on which the partition walls BA are formed, for example, in the order of 1 to 9. This order is, for example, the order in which the ink is applied linearly with the tension between the metal inks. FIG. 13B is a diagram illustrating a state in which, for example, one drop of metal ink is applied. As shown in FIG. 13B, since the partition wall BA is provided, the metal ink applied to the gate formation region 52 is held without being diffused. In this manner, the droplet applying device 120G applies the metal ink to the entire gate forming region 52.

After the metal ink is applied to the gate formation region 52, the sheet substrate FB is transported so that the portion where the metal ink is applied is positioned on the −Z side of the heat treatment apparatus BK. The heat treatment apparatus BK performs heat treatment on the metal ink applied on the sheet substrate FB, and dries the metal ink. FIG. 14A is a diagram illustrating a state of the gate formation region 52 after the metal ink is dried. As shown in FIG. 14A, by drying the metal ink, the conductors included in the metal ink are laminated in a thin film shape. Such a thin film-like conductor is formed on the entire gate formation region 52, and as shown in FIG. 14B, the gate bus line GBL and the gate electrode G are formed on the sheet substrate FB.

Next, the sheet substrate FB is conveyed to the −Z side of the droplet applying apparatus 120I. In the droplet applying device 120I, the electrically insulating ink is applied to the sheet substrate FB. In the droplet applying device 120I, for example, as shown in FIG. 15, electrically insulating ink is applied onto the gate bus line GBL and the gate electrode G passing through the source / drain formation region 53.

After the electrical insulating ink is applied, the sheet substrate FB is transported to the −Z side of the heat treatment apparatus BK, and the heat treatment apparatus BK heat-treats the electrical insulation ink. By this heat treatment, the electrically insulating ink is dried, and the gate insulating layer I is formed. FIG. 15 shows a state in which the gate insulating layer I is formed in a circular shape so as to straddle the partition BA, but it is not particularly necessary to form the gate insulating layer I beyond the partition BA.

After the gate insulating layer I is formed, the sheet substrate FB is transported to the −Z side of the droplet applying apparatus 120SD. In the droplet applying device 120SD, metal ink is applied to the source / drain formation region 53 of the sheet substrate FB. For the portion of the source / drain formation region 53 straddling the gate insulating layer I, for example, metal ink is ejected in the order of 1 to 9 shown in FIG.

After discharging the metal ink, the sheet substrate FB is conveyed to the −Z side of the heat treatment apparatus BK, and the metal ink is dried. After the drying process, the conductor contained in the metal ink is laminated in a thin film shape, and the source bus line SBL, the source electrode S, the drain electrode D, and the anode P are formed. However, at this stage, the source electrode S and the drain electrode D are connected.

Next, the sheet substrate FB is conveyed to the −Z side of the cutting device 130. The sheet substrate FB is cut between the source electrode S and the drain electrode D by the cutting device 130. FIG. 17 is a diagram illustrating a state in which the gap between the source electrode S and the drain electrode D is cut by the cutting device 130. The cutting device 130 performs cutting while adjusting the irradiation position of the laser beam LL onto the sheet substrate FB using the galvanometer mirror 131.

After cutting between the source electrode S and the drain electrode D, the sheet substrate FB is transported to the −Z side of the droplet applying apparatus OS. In the droplet applying apparatus OS, the organic semiconductor layer OS is formed on the sheet substrate FB. Organic semiconductor ink is ejected across the source electrode S and the drain electrode D into a region overlapping the gate electrode G on the sheet substrate FB.

After the organic semiconductor ink is discharged, the sheet substrate FB is conveyed to the −Z side of the heat treatment apparatus BK, and the organic semiconductor ink is dried. After the drying treatment, semiconductors included in the organic semiconductor ink are laminated in a thin film shape, and an organic semiconductor OS is formed as shown in FIG. Through the above steps, the field effect transistor and the connection wiring are formed on the sheet substrate FB.

Subsequently, the sheet substrate FB is transported to the light emitting layer forming unit 93 by the transport roller RR (see FIG. 3). In the light emitting layer forming section 93, red, green, and blue light emitting layers IR are formed by the droplet applying device 140Re, the droplet applying device 140Gr, the droplet applying device 140Bl, and the heat treatment device BK, respectively. Since the barrier ribs BA are formed on the sheet substrate FB, even when the red, green, and blue light emitting layers IR are continuously applied without heat treatment by the heat treatment apparatus BK, the solution is applied to the adjacent pixel regions. Overflow does not cause color mixing.

After the formation of the light emitting layer IR, the insulating layer I is formed on the sheet substrate FB via the droplet applying device 140I and the heat treatment device BK, and the transparent electrode IT is formed via the droplet applying device 140IT and the heat treatment device BK. Through these steps, the organic EL element 50 shown in FIGS. 1A to 1C is formed on the sheet substrate FB.

In the element forming operation, in order to prevent the sheet substrate FB from shifting in the X direction, the Y direction, and the θZ direction in the process of forming the organic EL element 50 while transporting the sheet substrate FB as described above, an alignment operation is performed. Is going. Hereinafter, the alignment operation will be described with reference to FIG.

In the alignment operation, a plurality of alignment cameras CA (CA1 to CA8) provided in each unit appropriately detect the alignment mark AM formed on the sheet substrate FB, and transmit the detection result to the control unit 104. The control unit 104 causes the alignment operation to be performed based on the transmitted detection result.

For example, the control unit 104 detects the feeding speed of the sheet substrate FB based on the imaging interval of the alignment mark AM detected by the alignment camera CA (CA1 to CA8), and whether or not the roller RR is rotating at a predetermined speed, for example. Determine whether. When it is determined that the roller RR is not rotating at a predetermined speed, the control unit 104 issues an instruction for adjusting the rotation speed of the roller RR and applies feedback.

For example, the control unit 104 detects whether or not the position of the alignment mark AM in the Y-axis direction is shifted based on the imaging result of the alignment mark AM, and detects whether or not the sheet substrate FB is displaced in the Y-axis direction. To do. When the misregistration is detected, the control unit 104 detects how long the misregistration continues in a state where the sheet substrate FB is conveyed.

If the time of positional deviation is short, it corresponds by switching the nozzle 122 which apply | coats a droplet among the several nozzles 122 of the droplet application apparatus 120. FIG. If the deviation of the sheet substrate FB in the Y-axis direction continues for a long time, the position of the sheet substrate FB in the Y-axis direction is corrected by the movement of the roller RR.

For example, the control unit 104 detects whether or not the sheet substrate FB is displaced in the θZ direction based on the positions of the alignment marks AM detected by the alignment camera CA in the X-axis and Y-axis directions. When the positional deviation is detected, the control unit 104 detects how long the positional deviation continues while the sheet substrate FB is conveyed, as in the case of detecting the positional deviation in the Y-axis direction.
If the positional deviation time is short, it can be dealt with by switching the nozzle 122 that applies droplets among the plurality of nozzles 122 of the droplet applying apparatus 120. If the deviation continues for a long time, the two rollers RR provided at a position sandwiching the alignment camera CA that has detected the deviation are moved in the X direction or the Y direction to correct the position of the sheet substrate FB in the θZ direction.

In this embodiment, when the control unit 104 controls the air pad mechanism 40, for example, the gas layer AR is controlled to be a layer having a uniform thickness, and an alignment operation, an electrode formation operation, and a light emitting layer formation are performed. The layer thickness, the formation range of the gas layer AR, the supply rate or supply amount of the gas from the pad member 41, and the like are controlled according to the processing of the substrate processing unit 102 in the above embodiment, such as the operation and the cutting operation of the sheet substrate FB. It is preferable.

As described above, the substrate processing apparatus 100 according to this embodiment moves with respect to the droplet applying apparatuses 120 and 140 that perform a predetermined process on the sheet substrate FB, and the droplet applying apparatuses 120 and 140. And a suction holding plate 12 that holds the sheet substrate FB while forming the processing target surface FBc of the sheet substrate FB. Further, according to the substrate processing apparatus 100 of the present embodiment, it is possible to perform processing on the sheet substrate FB while ensuring flatness on the processing surface FBc of the sheet substrate FB. Thereby, the substrate processing apparatus 100 which can form a highly accurate pattern with respect to a flexible substrate can be provided.

The technical scope of the present invention is not limited to the above-described embodiment, and appropriate modifications can be made without departing from the spirit of the present invention.

For example, in the above embodiment, the transport mechanism TR is configured to be long in the transport direction (X direction) with respect to the floor portion of the substrate processing apparatus 100 and short in the vertical direction (Z direction) of the transport direction. However, the present invention is not limited to this. For example, as shown in FIG. 21, it may be configured to be long in the Z direction. In this case, the sheet substrate FB is transported along the Z direction, and the processing for the sheet substrate FB is performed in the X direction or the Y direction.

Further, in the above-described embodiment, only the + Z side suction holding plate 12 of the base 21 in the transport mechanism TR is used to form the transport and processing surface FBc, but the present invention is not limited to this. For example, as shown in FIG. 21, the conveyance and formation of the processing surface FBc may be performed using the suction holding plate 12 on the −Z side of the base portion 21. In this case, for example, the droplet applying device 120 of the electrode forming unit 92 performs the above-described processing on the sheet substrate FB using the + Z side suction holding plate 12 of the base 21 to apply the droplets of the light emitting layer forming unit 93. The apparatus 140 performs the above-described processing on the sheet substrate FB using the suction holding plate 12 on the −Z side of the base 21. As a result, the size of the substrate processing apparatus 100 itself is reduced, and the space for placing the substrate processing apparatus 100 is saved.

In the above embodiment, the transport mechanism TR is provided only at a position corresponding to the droplet applying apparatuses 120 and 140. However, the transport mechanism TR may be disposed at another position.

FB ... sheet substrate TR ... conveying mechanism FBA ... processed part S1 ... space S2 ... space 10 ... belt mechanism 12 ... adsorption holding plate 12a ... adsorption holding surface 13 ... support member 14 ... shaft member 15 ... holding member 16 ... adsorption pad 16a ... suction surface 17 ... support plate 17a ... actuator for Y direction 18 ... pump mechanism 20 ... belt drive mechanism 22 ... belt pressing part 23 ... belt pressing actuator 30 ... fixed cylinder shaft 31 ... rotating cylinder 40 ... air pad mechanism 41 ... pad member 43 ... Piping 100 ... Substrate processing apparatus 104 ... Control part 105 ... Conveying part

Claims (24)

1. A processing unit for performing predetermined processing on the substrate;
   A substrate processing apparatus comprising: a substrate holding unit that moves relative to the processing unit and holds the substrate while forming a surface to be processed of the substrate.
2. The substrate processing apparatus according to claim 1, wherein a plurality of the substrate holding units are provided.
3. The substrate processing apparatus according to claim 1, wherein the substrate holding unit has a holding surface that flattens the surface to be processed.
4. The substrate processing apparatus according to claim 1, wherein the substrate holding unit is disposed on an endless support member.
5. The substrate processing apparatus according to claim 1, wherein the substrate holding unit holds the substrate at a processing position by the processing unit.
6. The substrate processing apparatus according to claim 1, further comprising a pressing mechanism that pushes the substrate holding unit toward the processing unit.
7. The substrate processing apparatus according to claim 6, further comprising a receiving unit that receives the substrate holding unit pressed by the pressing mechanism.
8. A gas layer forming part that forms a gas layer with the substrate holding part;
   The substrate processing apparatus according to claim 7, wherein the gas layer is used as the receiving unit.
9. The substrate processing apparatus according to claim 7, wherein a reference surface serving as a reference for the processing target surface is formed using the substrate holding unit and the receiving unit.
10. The substrate processing apparatus according to claim 9, wherein the gas layer forming unit is provided so as to sandwich the processing unit in a moving direction of the substrate holding unit.
11. The substrate processing apparatus according to claim 1, further comprising a driving unit that drives the substrate holding unit.
12. A substrate transport unit for transporting the substrate;
    The substrate processing apparatus according to claim 11, wherein the driving unit drives the substrate holding unit according to a conveyance speed of the substrate.
13. The substrate processing apparatus according to claim 1, wherein the substrate holding unit includes an adsorption unit that adsorbs the substrate.
14. The substrate processing apparatus according to claim 13, wherein the suction unit includes a switching mechanism that switches a suction state of the substrate.
15. The substrate processing apparatus according to claim 14, wherein the switching mechanism switches the suction state according to a position of the substrate holding unit.
16. The substrate processing apparatus according to claim 13, wherein the suction unit is disposed corresponding to an edge of the substrate.
17. The substrate processing apparatus according to claim 13, wherein the substrate holding unit includes a moving mechanism that moves the suction unit.
18. A processing step for performing a predetermined process on the surface to be processed of the substrate;
    A substrate holding step of holding the substrate while forming a surface to be processed of the substrate by the substrate holding unit;
    A moving step of moving the substrate holding portion disposed on the endless support member in the substrate transport direction;
    The manufacturing method of the display element which has.
19. The method for manufacturing a display element according to claim 18, further comprising a forming step of forming a reference surface serving as a reference for the surface to be processed on the substrate.
20. The method of manufacturing a display element according to claim 19, wherein the forming step includes supplying a gas toward the substrate to form a gas layer on the substrate.
21. The method for manufacturing a display element according to claim 20, wherein the forming step includes controlling the gas layer in accordance with the predetermined process.
22. The method for manufacturing a display element according to any one of claims 18 to 21, further comprising a pressing step of pressing the substrate holding portion toward the substrate.
23. The said board | substrate holding process includes making the said board | substrate holding part adsorb | suck the said board | substrate, and switching the adsorption state of the said board | substrate according to the position of the said board | substrate holding part. The manufacturing method of the display element of description.
24. The method for manufacturing a display element according to any one of claims 18 to 23, further comprising a transporting step of transporting the flexible substrate in the transporting direction.

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