WO2011064914A1 - 有機elデバイス - Google Patents
有機elデバイス Download PDFInfo
- Publication number
- WO2011064914A1 WO2011064914A1 PCT/JP2010/004315 JP2010004315W WO2011064914A1 WO 2011064914 A1 WO2011064914 A1 WO 2011064914A1 JP 2010004315 W JP2010004315 W JP 2010004315W WO 2011064914 A1 WO2011064914 A1 WO 2011064914A1
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- WIPO (PCT)
- Prior art keywords
- organic
- hole
- electrode
- emitting region
- film
- Prior art date
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- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/874—Passivation; Containers; Encapsulations including getter material or desiccant
Definitions
- the present invention relates to an organic EL device that suppresses a decrease in organic EL emission characteristics.
- An organic EL panel is mentioned as a flat panel display excellent in terms of low voltage driving, all solid-state type, high-speed response, self-luminous property, and the like.
- a thin film transistor hereinafter referred to as “TFT”
- TFT thin film transistor
- An electrode, an organic layer, and a second electrode are sequentially stacked.
- the flattening film is an acrylic resin or a polyimide resin in view of easy permittivity, film thickness, flattening, and easy control of the taper angle of the pattern formation and the formed pattern end. It is comprised with organic resin materials, such as.
- the acrylic resin is superior to the polyimide resin in terms of being colorless and transparent while the polyimide resin is colored and transparent, and in terms of cost, and is suitably used as a planarizing film.
- the acrylic resin has higher hygroscopicity than the polyamide resin, and contains more moisture therein. It is conceivable that the moisture inside the organic resin is removed in advance by firing. For example, in the case of an acrylic resin, the heat resistant temperature is about 250 ° C. Is not enough to remove. Therefore, when the planarizing film is composed of an organic resin material, moisture etc. leaks from the planarizing film, the outgas reaches the electrode and the organic layer, and the periphery of the electrode and the organic layer is damaged and deteriorated. There is a problem that the luminance in the portion is lowered.
- Patent Document 1 discloses a configuration in which an inorganic insulating film is provided in a lower layer and an upper layer of a planarizing film made of an organic material. Since the planarization film is completely covered with the inorganic insulating film, the planarization film can be prevented from absorbing moisture during the production of the organic EL device, and the organic layer can be prevented from being deteriorated by moisture. It is described that it is.
- Patent Document 2 discloses an organic EL panel having a configuration in which a flattening film is divided for each pixel by a flattening film dividing unit provided in a display region. According to this configuration, even if moisture leaks from the planarization film in any pixel, moisture cannot move to the planarization film of other pixels, so that moisture leaked from the planarization film is displayed. It is described that it can be prevented from spreading over the entire area.
- the organic EL panel having the configuration of Patent Document 2 it is possible to prevent moisture contained in the flattening film from moving through the entire display region by the flattening film dividing unit, but it is divided and formed. Since each of the planarization films is covered with an inorganic film that is a pixel electrode, moisture remains contained in the planarization film. For this reason, when the organic EL panel is used for a long period of time, it is conceivable that the organic EL characteristics deteriorate due to the pixel electrode being damaged by moisture leaked from the planarization film.
- An object of the present invention is to suppress deterioration of organic EL light emission characteristics due to leakage of moisture or the like contained in an organic resin such as a planarizing film over time.
- the organic EL device of the present invention has a light-emitting region and a non-light-emitting region outside the light-emitting region, and is a planarization made of a substrate and an organic resin provided on the substrate so as to cover the light-emitting region and the non-light-emitting region.
- a second electrode provided so as to cover the light emitting region, and in the non-light emitting region, a hole reaching the planarizing film from the second electrode and at least exposing the planarizing film is formed on the inner wall surface.
- the hole reaching the planarizing film from the second electrode is formed in the non-light emitting region, and at least the planarizing film is exposed on the inner wall surface of the hole.
- Moisture contained in the organic resin is released to the outside from the inner wall surface of the hole. For this reason, the moisture contained in the organic resin constituting the planarization film is prevented from leaching into the organic layer and the electrode, and as a result, the organic EL light emission characteristics are deteriorated by the moisture contained in the planarization film. Can be suppressed.
- the first electrode is provided so as to cover a part of the non-light-emitting region, and the edge cover provided so as to cover the first electrode and the planarizing film is provided in the non-light-emitting region. Furthermore, it is preferable to provide.
- the hole is formed so as to penetrate the planarizing film.
- the hole is formed so as to penetrate the planarizing film, the exposed area of the planarizing film on the inner wall surface of the hole can be increased, and moisture can be supplied from the inside of the planarizing film to the outside. A large flow path for escaping can be secured.
- the inner wall surface of the hole is preferably perpendicular to the substrate.
- the material which comprises the organic layer formed after forming a hole, a 2nd electrode, etc. is each. It is possible to suppress adhesion to the inner wall of the hole during formation, and as a result, the planarization film can be reliably exposed on the inner wall of the hole, and a flow path for allowing moisture to escape from the inside of the planarization film to the outside Can be secured.
- the planarizing film may have a thickness of 2 to 5 ⁇ m.
- the planarization film has a thickness of 2 ⁇ m or more, the flatness and electrical insulation of the substrate surface can be sufficiently ensured.
- the planarizing film exposed on the inner wall surface of the hole may be covered with a coating film formed of the same material as the edge cover and integrally with the edge cover.
- the shape of the hole may be circular in plan view.
- the shape of the hole may be rectangular in plan view.
- the area of the inner wall surface of the hole can be made larger than in the case of a circle, and a larger moisture flow path can be secured.
- the planarizing film may be formed of a polyimide resin or an acrylic resin.
- the organic EL device of the present invention may be used for display.
- a hole reaching from the second electrode to the planarization film is formed in the non-light emitting region, and at least the planarization film is exposed on the inner wall surface of the hole.
- Moisture contained in the organic resin is released from the inner wall surface of the hole to the outside. For this reason, the moisture contained in the organic resin constituting the planarization film is prevented from leaching into the organic layer and the electrode, and as a result, the organic EL light emission characteristics are deteriorated by the moisture contained in the planarization film. Can be suppressed.
- FIG. 1 is a plan view of an organic EL display device according to Embodiment 1.
- FIG. FIG. 2 is a cross-sectional view taken along line II-II in FIG. It is a figure which shows the modification of the shape of a hole.
- (A)-(e) is explanatory drawing which shows the manufacturing method of the organic electroluminescence display which concerns on Embodiment 1.
- FIG. 6 is a cross-sectional view of an organic EL display device according to Embodiment 2.
- FIG. (A)-(d) is explanatory drawing which shows the manufacturing method of the organic electroluminescence display which concerns on Embodiment 2.
- FIG. It is sectional drawing of the organic electroluminescence display which concerns on Embodiment 3.
- FIG. (A)-(d) is explanatory drawing which shows the manufacturing method of the organic electroluminescence display which concerns on Embodiment 3.
- Embodiment 1 (Configuration of organic EL display device) 1 and 2 show an organic EL display device 10 according to the first embodiment.
- the organic EL display device 10 is used for, for example, a display of a portable information device, a full color high-definition television, or the like.
- the organic EL display device 10 is provided such that the substrate such as the TFT substrate 11 and the sealing member face each other.
- the planarization film 12, the first electrode 13, and the like are formed in the space formed between the TFT substrate 11 and the sealing member from the TFT substrate 11 side.
- the organic layer 14 and the second electrode 15 are sequentially stacked.
- the plurality of light emitting areas P are configured in a matrix, and a predetermined image display is performed in the light emitting areas P by driving these light emitting areas P independently.
- region P comprise the non-light emission area
- the plurality of light emitting regions P are configured by three types of light emitting regions P, a red light emitting region P, a green light emitting region P, and a blue light emitting region P.
- the organic EL display device 10 has, for example, a length of 400 to 500 mm, a width of 300 to 400 mm, and a thickness of 1 to 30 mm.
- Each of the light emitting regions P is, for example, about 200 ⁇ m in length and about 50 ⁇ m in width, and they are arranged with an interval of about 100 ⁇ m in the vertical direction and about 50 ⁇ m in the horizontal direction, for example.
- the TFT substrate 11 has a configuration in which a TFT 11b, a wiring 11c, and the like are formed on a TFT substrate main body 11a.
- a plurality of TFTs 11b are provided at predetermined intervals (for example, about every 300 ⁇ m in length and about every 100 ⁇ m in width) corresponding to the pitch at which the plurality of light emitting regions P are formed.
- An insulating planarizing film 12 is formed so as to cover each of the TFTs 11b.
- the TFT substrate body 11a is an insulating substrate such as glass, for example, and has a length of about 320 mm, a width of about 400 mm, and a thickness of about 0.7 mm.
- the TFT 11b has a function as a switching element in each light emitting region P.
- Examples of the material constituting the TFT 11b include inorganic semiconductor materials such as amorphous silicon and polycrystalline silicon.
- the flattening film 12 has a function of flattening the steps and irregularities of the TFT substrate 11 so that the first electrode 13 can be formed flat.
- the material constituting the planarizing film 12 include photosensitive organic resin materials such as acrylic resin, polyimide resin, and novolac resin. Of these, acrylic resins are preferred from the viewpoints of being inexpensive and being colorless and transparent.
- the organic EL panel has a bottom emission type structure, the TFT substrate 11 is required to be light transmissive. Therefore, the organic EL panel is preferably made of a light transmissive material such as an acrylic resin.
- a contact hole 12c is provided in the planarizing film 12 so as to correspond to each of the plurality of TFTs 11b, thereby enabling conduction from the surface of the TFT substrate body 11a to the TFT 11b.
- the planarizing film 12 has a film thickness of, for example, 0.5 to 5 ⁇ m, and is preferably 2 ⁇ m or more from the viewpoint of ensuring flatness and electrical insulation more reliably.
- a TFT substrate having a planarizing film for a liquid crystal device can be used as the TFT substrate 11 whose surface is covered with the planarizing film 12.
- the first electrode 13 is provided so as to have an independent island pattern for each light emitting region P.
- the first electrode 13 is electrically connected to the TFT 11 b corresponding to each light emitting region P through a contact hole 12 c formed on the planarizing film 12.
- the island pattern of the first electrode 13 may be formed so as to correspond at least to the light emitting region P, but a part of the island pattern is also formed in the non-light emitting region N surrounding the light emitting region P.
- the first electrode 13 is covered with the edge cover 16. That is, each of the island-shaped patterns of the first electrodes 13 has a peripheral portion covered with the edge cover 16, and the islands of the adjacent first electrodes 13 are partitioned by the edge cover 16.
- the first electrode 13 has a thickness of about 100 nm, for example.
- the first electrode 13 has a function as an anode for injecting holes into the organic layer 14.
- the material of the anode include ITO (indium oxide-tin oxide alloy), indium zinc oxide alloy (In 2 O 3 —ZnO), zinc oxide (ZnO), and the like.
- the organic EL display device 10 has a bottom emission structure in which light is extracted from the first electrode 13 side, the first electrode 13 is made of a light transmissive or light semi-transmissive material.
- the first electrode 13 is made of a light reflective material.
- the edge cover 16 is provided on the first electrode 13 so as to cover the periphery of the first electrode 13 in the non-light emitting region N. In a region where the first electrode 13 is not provided, the edge cover 16 is provided on the planarizing film 12. That is, the edge cover 16 is formed so as to partition the islands of the light emitting regions P adjacent to each other of the first electrode 13, thereby preventing the adjacent islands of the first electrode 13 from conducting. .
- the edge cover 16 is made of, for example, an inorganic insulating material such as silicon dioxide (SiO 2 ), silicon nitride film (SiN x ), silicon oxide film (SiO x ), silicon nitride oxide film (SiNO), acrylic resin, or polyimide-based material. It is made of an organic resin such as a resin.
- the edge cover 16 has a height of 0.5 to 2 ⁇ m, for example.
- the edge cover 16 has a hole 17 that reaches the planarization film 12 from the surface of the edge cover 16 and penetrates the planarization film 12.
- the planarization film 12 is exposed on the inner wall surface of the hole 17. Yes.
- the hole 17 has a function of releasing moisture contained in the planarizing film 12 into the space in the hole 17 from the exposed portion of the planarizing film 12 on the inner wall surface. Since the space in the hole 17 leads to the space formed between the TFT substrate 11 and the sealing member, the moisture released into the space in the hole 17 is transferred to the space formed between the two. It is absorbed by the provided desiccant and moisture absorbent.
- the hole 17 has, for example, a circular shape in its opening in plan view.
- the hole 17 has a hole depth of about 3 ⁇ m and a hole diameter of about 5 ⁇ m.
- the material of the organic layer 14 and the second electrode 15 is deposited on the bottom surface of the hole 17 as described later in the description of the manufacturing method. It doesn't matter.
- the wall surface of the hole 17 is preferably perpendicular to the TFT substrate 11. Thereby, when other substances enter the hole 17 from the opening of the hole 17, they can be prevented from adhering to the inner wall of the hole 17, and as a result, the planarizing film 12 is formed on the inner wall of the hole 17. Can be reliably exposed.
- the shape of the hole 17 is not limited to a circular shape in plan view as shown in FIG. For example, it may be rectangular as shown in FIG. When the shape of the hole 17 is a rectangle in plan view, the area of the inner wall surface of the hole 17 serving as a moisture removal path can be increased. Further, a plurality of holes 17 may be provided as shown in FIGS. 3B and 3C, or may have a meandering shape as shown in FIG. 3D. Thus, by enlarging the area of the inner wall surface of the hole 17, it is possible to secure a large flow path for releasing moisture in the organic resin to the outside.
- the organic layer 14 includes at least a light emitting layer, and is provided with a hole injection layer, a hole transport layer, an electron blocking layer, and the like on the hole injection side (anode side), and on the electron injection side (cathode side).
- An electron injection layer, an electron transport layer, a hole blocking layer, and the like are provided.
- the organic layer 14 may have a three-layer structure in which a hole transport layer, a light emitting layer, and an electron transport layer are stacked, and a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection.
- It may be a five-layer structure in which layers are stacked, and a six-layer structure in which a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, a hole blocking layer, and an electron injection layer are stacked. Also good.
- the hole injection layer and the hole transport layer have a function of efficiently injecting and transporting holes received from the anode to the light emitting layer.
- the hole injection material include copper phthalocyanine (CuPc).
- the hole transporting material include aromatic tertiary amine compounds such as 4′-bis [N- (1-naphthyl) -N-phenyl-amino] biphenyl) ( ⁇ -NPD).
- the hole injection layer and the hole transport layer have a thickness of about 30 nm and about 20 nm, respectively.
- the light emitting layer has a function of emitting light by injecting holes from the anode and electrons from the cathode when a voltage is applied to the first electrode 13 and the second electrode 15 and recombining them.
- the light-emitting material include metal oxinoid compounds (8-hydroxyquinoline metal complexes), naphthalene derivatives, anthracene derivatives, diphenylethylene derivatives, vinylacetone derivatives, triphenylamine derivatives, butadiene derivatives, coumarin derivatives, benzoxador derivatives, oxalates.
- the light emitting layer has a thickness of about 20 nm, for example.
- the electron injection layer and the electron transport layer have a function of efficiently injecting and transporting electrons received from the cathode to the light emitting layer.
- the electron transport material include tris (8-hydroxyquinoline) aluminum (Alq3).
- the electron injection material include lithium fluoride (LiF).
- the electron transport layer and the electron injection layer have a thickness of about 30 nm and about 1 nm, respectively.
- the second electrode 15 is formed so as to cover the entire surface of the substrate, that is, the organic layer 14 in the light emitting region P, and the edge cover 16 and the organic layer 14 attached on the edge cover 16 in the non-light emitting region N. Yes.
- the second electrode 15 has a thickness of about 10 to 200 nm, for example.
- the second electrode 15 has a function as a cathode for injecting electrons into the organic layer 14.
- the material of the cathode include Ag (silver), aluminum (Al), vanadium (V), cobalt (Co) nickel (Ni), tungsten (W), gold (Au), calcium (Ca), and titanium (Ti ), Yttrium (Y), sodium (Na), ruthenium (Ru), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb), or other metal materials, or fluoride Examples thereof include alloys such as lithium (LiF) / calcium (Ca) / aluminum (Al).
- the second electrode 15 is made of a light reflective material.
- the second electrode 15 is made of a light transmissive or light semi-transmissive material.
- the reverse structure type organic EL element in which the first electrode 13 functions as a cathode and the second electrode 15 as an anode may be used.
- the first electrode 13 is made of a cathode material
- the second electrode 15 is made of an anode material.
- the sealing member is a substrate made of glass or the like, for example, and a desiccant is affixed to the non-light emitting region N on the surface on the TFT substrate 11 side.
- the sealing member has, for example, a length of 400 to 500 mm, a width of 300 to 400 mm, and a thickness of 0.3 to 1.1 mm.
- the TFT substrate 11 and the sealing member are bonded together with a sealing resin such as an ultraviolet curable resin or a thermosetting epoxy resin.
- a space formed by sealing with the TFT substrate 11 and the sealing member is filled with an inert gas such as dry argon or dry nitrogen.
- a polarizing plate may be provided on each of the outer surfaces of the TFT substrate 11 and the sealing member.
- the manufacturing method of the organic EL display device 10 includes a planarization film forming step, a first electrode forming step, an edge cover forming step, a hole forming step, an organic layer / second electrode forming step, and a sealing step.
- a manufacturing method when the edge cover 16 is formed of an inorganic insulating material such as SiO 2 will be described.
- a plurality of TFTs 11b are formed at a predetermined interval on the insulating TFT substrate body 11a, and further, a planarizing film 12 is formed using a photolithography technique.
- a photolithography technique for example, an acrylic resin is applied on a substrate having a cleaned surface by spin coating, and prebaked at about 80 ° C. for about 20 minutes to obtain an acrylic resin film.
- the acrylic resin film is exposed using a photomask (for example, the exposure amount is about 360 mJ / cm 2 ), and further developed using, for example, tetramethylammonium hydroxide (TMAH) as a photoresist developer.
- TMAH tetramethylammonium hydroxide
- the contact hole 12c that is electrically connected to the TFT 11b is formed.
- the contact hole 12c has a diameter of about 5 ⁇ m, for example.
- post-baking is performed at about 220 ° C. for about 1 hour to form the planarizing film 12.
- the first electrode 13 is formed.
- an ITO film having a thickness of about 100 nm is formed by sputtering, and the first electrode 13 is formed so as to correspond to the pixel region by using a photolithography technique. To do.
- the first electrode 13 is electrically connected to the TFT 11b through the contact hole 12c of the planarizing film 12.
- the edge cover 16 is patterned so as to cover the peripheral edge portion of the first electrode 13 in the non-light emitting region N.
- an inorganic insulating material eg, SiO 2
- the pattern of the edge cover 16 at this time covers the peripheral edge portion of the first electrode 13 in the non-light emitting region N and penetrates the edge cover 16 at a predetermined position of the non-light emitting region N to the planarizing film 12. It is assumed that the pattern 17a is formed.
- the planarization film 12 is etched using the pattern in which the holes 17a are provided in the edge cover 16 as a mask, so that the holes 17b leading from the edge cover 16 to the planarization film 12 are obtained.
- the inner wall surface of the hole 17 formed by etching the planarizing film 12 is in contact with the TFT substrate 11. And can be formed so as to be vertical.
- the etching is performed under the conditions that the RF power is about 1000 W, the O 2 flow rate is about 300 sccm, the bias voltage is about 500 V, and the etching time is about 300 seconds.
- a predetermined light emitting region P (for example, a red light emitting region) is used by using a known method such as a resistance heating vapor deposition method, an ion beam (EB) vapor deposition method, or an ink jet method.
- the organic layer 14 is patterned so as to be provided with a predetermined organic layer 14 (for example, an organic layer made of a red light-emitting organic EL material). At this time, even if the organic layer 14 adheres to the non-light emitting region N, the performance of the organic EL display device is not affected.
- the manufacturing process can be simplified.
- a second electrode 15 is formed on the organic layer 14 using a known method such as a sputtering method. At this time, the second electrode 15 is formed on the entire surface of the substrate. Similar to the organic layer 14, even when the material of the second electrode 15 is laminated on the bottom of the hole 17 that leads from the edge cover 16 to the planarization film 12, the second electrode 15a affects the performance of the organic EL display device. Since the second electrode 15 does not need to be patterned, the manufacturing process can be simplified.
- the TFT substrate 11 and the sealing member are opposed to each other and bonded together with a sealing resin.
- a recess is provided in advance on a surface of the sealing glass on the TFT substrate 11 side in a region that becomes the non-light emitting region N, and a desiccant is pasted thereon.
- the bonding between the TFT substrate 11 and the sealing member is preferably performed in a glove box in order to perform the moisture concentration and the oxygen concentration under the condition of a predetermined value or less.
- the inside of the glove box is filled with an inert gas such as nitrogen or argon, and each of the water concentration and the oxygen concentration is preferably controlled to 10 ppm or less, and more preferably 1 ppm or less.
- the organic EL display device 10 according to Embodiment 1 is obtained.
- the holes 17 reaching the planarizing film 12 from the second electrode 15 are formed in the non-light emitting region N, and at least the planarizing film 12 is formed on the inner wall surface of the hole 17. Since it is exposed, the moisture contained in the organic resin constituting the planarizing film 12 is released from the inner wall surface of the hole 17 to the outside. Therefore, the moisture contained in the organic resin constituting the planarizing film 12 is suppressed from leaching out into the organic layer 14 and the electrodes, and as a result, the organic EL light emission characteristics are degraded by the moisture contained in the planarizing film 12. Can be suppressed.
- the hole 17 is formed so as to penetrate the planarizing film 12, the exposed surface of the planarizing film 12 on the inner wall surface of the hole 17 can be enlarged, and moisture inside the planarizing film 12 is removed to the outside. It is possible to secure a large flow path for discharging to the surface.
- the planarization film 12 is etched by using the pattern of the holes 17 formed on the edge cover 16 as a mask. 17 can be formed, and the manufacturing process can be simplified.
- Embodiment 2 >> Next, the organic EL display device 10 according to the second embodiment will be described. In addition, about the structure corresponding to the organic electroluminescence display 10 of Embodiment 1, it represents using the same referential mark.
- FIG. 5 shows an organic EL display device 10 according to the second embodiment.
- the organic EL display device 10 has a configuration in which a planarizing film 12, a first electrode 13, an organic layer 14, and a second electrode 15 are sequentially stacked on a TFT substrate 11.
- the TFT substrate 11, the planarizing film 12, the first electrode 13, and the edge cover 16 have the same configuration as in the first embodiment, description thereof is omitted.
- a hole 17 reaching the planarizing film 12 from the surface of the edge cover 16 is formed, and the planarizing film 12 is exposed on the inner wall surface of the hole 17.
- the holes 17 are formed to a depth that does not penetrate the planarizing film 12.
- the hole 17 has a function of releasing moisture contained in the planarizing film 12 into the space in the hole 17 from the exposed portion of the planarizing film 12 on the inner wall surface. Since the space in the hole 17 leads to the space formed between the TFT substrate 11 and the sealing member, the moisture released into the space in the hole 17 is transferred to the space formed between the two. It is absorbed by the provided desiccant and moisture absorbent.
- the hole 17 has, for example, a circular shape in its opening in plan view.
- the hole 17 has a depth of about 3 ⁇ m and a diameter of about 5 ⁇ m.
- the planarizing film 12 may be exposed on the bottom surface of the hole 17, but the material of the organic layer 14 and the second electrode 15 may be deposited on the bottom surface of the hole 17.
- the organic layer 14, the second electrode 15, the sealing member, and the sealing structure of the TFT substrate 11 and the sealing member have the same configuration as that of the first embodiment, and thus the description thereof is omitted.
- this manufacturing method includes a planarization film forming step, a first electrode forming step, an edge cover forming step, a hole forming step, an organic layer / second electrode forming step, and a sealing step.
- a manufacturing method in the case where the edge cover 16 is formed of an organic resin such as SiO 2 will be described.
- first electrode formation process- First in the same manner as in the first embodiment, after the planarization film 12 is formed on the TFT substrate 11 and the contact hole 12c is formed, the first electrode 13 is patterned for each light emitting region P so as to be electrically connected to the TFT 11b. Form.
- the edge cover 16 is patterned by using, for example, a photolithography technique based on a spin coat method so as to cover the peripheral portion of the first electrode 13.
- edge cover 16 and the planarizing film 12 are simultaneously etched to form a hole 17 in a state where a mask is disposed so as to cover the edge cover 16 and the first electrode 13.
- the inner wall surface of the hole 17 formed by etching the planarizing film 12 becomes perpendicular to the TFT substrate 11.
- the etching is performed under the conditions that the RF power is about 1000 W, the O 2 flow rate is about 300 sccm, the bias voltage is about 500 V, and the etching time is about 300 seconds.
- the organic layer 14 and the second electrode 15 are sequentially formed as in the first embodiment.
- the TFT substrate 11 and the sealing member are opposed to each other and bonded with a sealing resin.
- the organic EL display device 10 according to Embodiment 2 is obtained.
- the holes 17 reaching the planarizing film 12 from the second electrode 15 are formed in the non-light emitting region N, and at least the planarizing film 12 is formed on the inner wall surface of the hole 17. Since it is exposed, the moisture contained in the organic resin constituting the planarizing film 12 is released from the inner wall surface of the hole 17 to the outside. Therefore, the moisture contained in the organic resin constituting the planarizing film 12 is suppressed from leaching out into the organic layer 14 and the electrodes, and as a result, the organic EL light emission characteristics are degraded by the moisture contained in the planarizing film 12. Can be suppressed.
- edge cover 16 is formed of an organic resin
- moisture is also contained in the edge cover 16, but the second electrode 15 penetrates the edge cover 16 to form the planarizing film 12. Since the reaching hole 17 is formed, a part of the edge cover 16 is exposed on the inner wall surface of the hole 17. For this reason, moisture contained in the organic resin constituting the edge cover 16 is organic. As a result, it is possible to suppress the organic EL light emission characteristics from being deteriorated by moisture contained in the edge cover 16.
- the hole 17 is formed so as to be shallower than the depth penetrating the planarizing film 12 when the hole 17 is formed.
- the etching time for performing can be shortened.
- the holes 17 may be formed by etching them simultaneously so as to penetrate the edge cover 16 and reach the planarizing film 12. it can.
- Embodiment 3 >> Next, the organic EL display device 10 according to Embodiment 3 will be described. In addition, about the structure corresponding to the organic electroluminescence display 10 of Embodiment 1, it represents using the same referential mark.
- FIG. 7 shows an organic EL display device 10 according to the third embodiment.
- the organic EL display device 10 has a configuration in which a planarizing film 12, a first electrode 13, an organic layer 14, and a second electrode 15 are sequentially stacked on a TFT substrate 11.
- the TFT substrate 11, the planarizing film 12, the first electrode 13, and the edge cover 16 have the same configuration as in the first embodiment, description thereof is omitted.
- the edge cover 16 has a hole 17 that reaches the planarization film 12 from the surface of the edge cover 16 and penetrates the planarization film 12.
- the planarization film 12 is exposed on the inner wall surface of the hole 17. Yes.
- a coating film 12 a made of the same material as the edge cover 16 (for example, an inorganic insulating material or an organic resin) is formed on the exposed surface of the planarizing film 12.
- the coating film 12 a is integrated with the edge cover 16. It has become.
- the hole 17 has a function of releasing moisture contained in the planarizing film 12 into the space in the hole 17 from the exposed portion of the planarizing film 12 on the inner wall surface. Since the space in the hole 17 leads to the space formed between the TFT substrate 11 and the sealing member, the moisture released into the space in the hole 17 is transferred to the space formed between the two. It is absorbed by the provided desiccant and moisture absorbent.
- the hole 17 has, for example, a circular shape in its opening in plan view.
- the hole 17 has a hole depth of about 3 ⁇ m and a hole diameter of about 5 ⁇ m.
- the covering film 12 a may be formed on the entire exposed portion of the planarizing film 12 on the inner wall surface of the hole 17 or may be formed on a part of the exposed surface of the planarizing film 12.
- the coating film 12a has a thickness of about 200 nm, for example.
- the organic layer 14, the second electrode 15, the sealing member, and the sealing structure of the TFT substrate 11 and the sealing member have the same configuration as that of the first embodiment, and thus the description thereof is omitted.
- the manufacturing method of the organic EL display device 10 includes a planarization film forming step, a first electrode forming step, a hole forming step, an edge cover forming step, an organic layer / second electrode forming step, and a sealing step.
- first electrode formation process- First as shown in FIG. 8A, in the same manner as in the first embodiment, after the planarization film 12 is formed on the TFT substrate 11 and the contact hole 12c is formed, the light is emitted so as to be electrically connected to the TFT 11b.
- the first electrode 13 is patterned for each region P.
- the planarization film 12 is etched using the etching mask in which the pattern of the holes 17 is formed, thereby forming the holes 17.
- the inner wall surface of the hole 17 formed by etching the planarizing film 12 becomes perpendicular to the TFT substrate 11. Can be formed.
- the edge cover 16 is patterned so as to cover the peripheral edge portion of the first electrode 13 in the non-light emitting region N.
- an inorganic insulating material eg, SiO 2
- the organic layer 14 and the second electrode 15 are sequentially formed as in the first embodiment.
- the TFT substrate 11 and the sealing member are opposed to each other and bonded with a sealing resin.
- the organic EL display device 10 according to Embodiment 3 is obtained.
- the holes 17 reaching the planarization film 12 from the second electrode 15 are formed in the non-light emitting region N, and at least the planarization film 12 is formed on the inner wall surface of the hole 17. Since it is exposed, the moisture contained in the organic resin constituting the planarizing film 12 is released from the inner wall surface of the hole 17 to the outside. Therefore, the moisture contained in the organic resin constituting the planarizing film 12 is suppressed from leaching out into the organic layer 14 and the electrodes, and as a result, the organic EL light emission characteristics are degraded by the moisture contained in the planarizing film 12. Can be suppressed.
- Embodiments 1 to 3 the case where the organic EL device is an organic EL display device has been described.
- the present invention is not limited to this.
- the organic EL device may be an organic EL lighting device or the like.
- the present invention is useful for organic EL devices such as organic EL display devices.
- Non-light-emitting area 10 Organic EL display device (organic EL device) 11 TFT substrate (substrate) 12 planarization film 12a coating film 13 first electrode 14 organic layer 15 second electrode 16 edge cover 17 hole
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Abstract
Description
(有機EL表示装置の構成)
図1及び2は、実施形態1の有機EL表示装置10を示す。この有機EL表示装置10は、例えば、携帯情報機器のディスプレイやフルカラーハイビジョンテレビ等に用いられるものである。
次に、図4を用いて、実施形態1にかかる有機EL表示装置10の製造方法を説明する。この有機EL表示装置10の製造方法は、平坦化膜形成工程、第1電極形成工程、エッジカバー形成工程、ホール形成工程、有機層・第2電極形成工程、及び封止工程を備える。なお、ここでは、エッジカバー16をSiO2等の無機絶縁材料で形成する場合の製造方法について説明する。
まず、公知の方法を用いて、絶縁性のTFT基板本体11aにTFT11bを所定の間隔で複数形成し、さらに、フォトリソグラフィ技術を用いて平坦化膜12を形成する。具体的には、例えば、表面を清浄化した基板上にスピンコート法を用いてアクリル樹脂を塗布し、さらに80℃程度で約20分間プリベークを行ってアクリル樹脂膜とする。このアクリル樹脂膜に、フォトマスクを用いて露光(例えば、露光量が360mJ/cm2程度)を行い、さらにフォトレジスト現像液として例えば水酸化テトラメチルアンモニウム(TMAH)を使用して現像することにより、TFT11bに導通するコンタクトホール12cを形成する。コンタクトホール12cは、例えば径が約5μmである。最後に220℃程度で約1時間ポストベークを行って、平坦化膜12とする。
次に、図4(a)に示すように、第1電極13を形成する。例えばITOで第1電極13を形成する場合、まず、スパッタ法を用いて厚さ100nm程度のITO膜を成膜し、フォトリソグラフィ技術を用いて画素領域に対応するように第1電極13を形成する。このとき、平坦化膜12のコンタクトホール12cを通じて第1電極13がTFT11bと導通する。
次に、図4(b)に示すように、非発光領域Nにおける第1電極13の周縁部を覆うようにエッジカバー16をパターン形成する。まず、スパッタ法等を用いて、無機絶縁材料(例えば、SiO2)膜を150nm程度の厚さに成膜する。これを、フォトリソグラフィ技術を用いて露光、現像を行い、続いて、ドライエッチング(例えば、RFパワーが1000W、ガス流量比がCF4/O2=425/75[sccm/sccm]、及びエッチング時間が150~200秒)を行って、エッジカバー16を所定のパターンに形成する。
続いて、図4(c)に示すように、エッジカバー16にホール17aが設けられたパターンをマスクとして、平坦化膜12をエッチングすることにより、エッジカバー16から平坦化膜12に通じるホール17bを形成する。
続いて、図4(d)に示すように、抵抗加熱蒸着法やイオンビーム(EB)蒸着法、インクジェット法等の公知の方法を用いて、所定の発光領域P(例えば、赤色の発光領域)に所定の有機層14(例えば、赤色発光有機EL材料からなる有機層)が設けられるように有機層14をパターン形成する。このとき、非発光領域Nに有機層14が付着しても、有機EL表示装置の性能には影響を与えない。また、エッジカバー16から平坦化膜12に通じるホール17の底部に有機層14の材料が積層された場合でも、この有機層14aが有機EL素子の機能に影響を与えることがなく、有機層14をパターン形成する必要がないので、製造工程を簡略化することができる。
最後に、TFT基板11と封止部材とを対向させて封止樹脂で貼り合わせる。なお、封止ガラスのTFT基板11側表面には、予め、非発光領域Nとなる領域に凹部が設けて乾燥剤を貼り付けておく。
実施形態1の有機EL表示装置10によれば、非発光領域Nにおいて第2電極15から平坦化膜12まで達するホール17が形成されており、ホール17の内壁面には少なくとも平坦化膜12が露出しているので、平坦化膜12を構成する有機樹脂に含まれている水分はホール17の内壁面から外部に放出される。そのため、平坦化膜12を構成する有機樹脂の内部に含まれる水分が有機層14や電極に浸み出すのが抑制され、結果として、平坦化膜12に含まれる水分によって有機EL発光特性が低下するのを抑制することができる。
次に、実施形態2に係る有機EL表示装置10について説明する。なお、実施形態1の有機EL表示装置10と対応する構成については同一の参照符号を用いて表す。
図5は、実施形態2に係る有機EL表示装置10を示す。
次に、図6を用いて、実施形態2に係る有機EL表示装置10の製造方法を説明する。この製造方法は、実施形態1と同様、平坦化膜形成工程、第1電極形成工程、エッジカバー形成工程、ホール形成工程、有機層・第2電極形成工程、及び封止工程を備える。なお、ここでは、エッジカバー16をSiO2等の有機樹脂で形成する場合の製造方法について説明する。
まず、実施形態1と同様にして、TFT基板11上に平坦化膜12を成膜し、コンタクトホール12cを形成した後、それぞれTFT11bに導通するように発光領域P毎に第1電極13をパターン形成する。
次に、図6(a)に示すように、第1電極13の周縁部を覆うようにして、例えばスピンコート法によるフォトリソグラフィ技術を用いてエッジカバー16をパターン形成する。
次いで、図6(b)に示すように、エッジカバー16及び第1電極13を覆うようにマスクを配した状態で、エッジカバー16及び平坦化膜12を同時にエッチングしてホール17を形成する。
続いて、図6(c)及び(d)に示すように、実施形態1と同様に有機層14及び第2電極15を順次形成する。そして、最後に、実施形態1と同様にして、TFT基板11と封止部材とを対向させて封止樹脂で貼り合わせる。こうして、実施形態2に係る有機EL表示装置10が得られる。
実施形態2の有機EL表示装置10によれば、非発光領域Nにおいて第2電極15から平坦化膜12まで達するホール17が形成されており、ホール17の内壁面には少なくとも平坦化膜12が露出しているので、平坦化膜12を構成する有機樹脂に含まれている水分はホール17の内壁面から外部に放出される。そのため、平坦化膜12を構成する有機樹脂の内部に含まれる水分が有機層14や電極に浸み出すのが抑制され、結果として、平坦化膜12に含まれる水分によって有機EL発光特性が低下するのを抑制することができる。
次に、実施形態3に係る有機EL表示装置10について説明する。なお、実施形態1の有機EL表示装置10と対応する構成については同一の参照符号を用いて表す。
図7は、実施形態3に係る有機EL表示装置10を示す。
次に、図8を用いて、有機EL表示装置10の製造方法を説明する。この有機EL表示装置10の製造方法は、平坦化膜形成工程、第1電極形成工程、ホール形成工程、エッジカバー形成工程、有機層・第2電極形成工程、及び封止工程を備える。
まず、図8(a)に示すように、実施形態1と同様にして、TFT基板11上に平坦化膜12を成膜し、コンタクトホール12cを形成した後、それぞれTFT11bに導通するように発光領域P毎に第1電極13をパターン形成する。
次に、図8(b)に示すように、非発光領域Nにおいて、ホール17のパターンが形成されたエッチングマスクを用いて平坦化膜12のエッチングを行い、ホール17を形成する。このとき、例えば反応性イオンエッチング(RIE)法等を用いて異方性エッチングを行うことにより、平坦化膜12をエッチングして形成するホール17の内壁面がTFT基板11に対して垂直になるように形成することができる。
次いで、図8(c)に示すように、非発光領域Nにおける第1電極13の周縁部を覆うようにエッジカバー16をパターン形成する。まず、スパッタ法等を用いて、無機絶縁材料(例えば、SiO2)膜を150nm程度の厚さに成膜する。これを、フォトリソグラフィ技術を用いて露光、現像を行い、続いて、ドライエッチング(例えば、RFパワーが1000W、ガス流量比がCF4/O2=425/75[sccm/sccm]、及びエッチング時間が150~200秒)を行って、エッジカバー16を所定のパターンに形成する。
続いて、図8(d)に示すように、実施形態1と同様に有機層14及び第2電極15を順次形成する。そして、最後に、実施形態1と同様にして、TFT基板11と封止部材とを対向させて封止樹脂で貼り合わせる。こうして、実施形態3に係る有機EL表示装置10が得られる。
実施形態3の有機EL表示装置10によれば、非発光領域Nにおいて第2電極15から平坦化膜12まで達するホール17が形成されており、ホール17の内壁面には少なくとも平坦化膜12が露出しているので、平坦化膜12を構成する有機樹脂に含まれている水分はホール17の内壁面から外部に放出される。そのため、平坦化膜12を構成する有機樹脂の内部に含まれる水分が有機層14や電極に浸み出すのが抑制され、結果として、平坦化膜12に含まれる水分によって有機EL発光特性が低下するのを抑制することができる。
実施形態1~3では有機ELデバイスが有機EL表示装置である場合について説明したが、特にこれに限られず、例えば、有機ELデバイスが有機EL照明装置等であってもよい。
N 非発光領域
10 有機EL表示装置(有機ELデバイス)
11 TFT基板(基板)
12 平坦化膜
12a 被覆膜
13 第1電極
14 有機層
15 第2電極
16 エッジカバー
17 ホール
Claims (10)
- 発光領域とその外側の非発光領域とを有する有機ELデバイスであって、
基板と、
上記基板上に上記発光領域及び上記非発光領域を覆うように設けられた有機樹脂からなる平坦化膜と、
上記平坦化膜上に少なくとも上記発光領域を覆うように設けられた第1電極と、
上記第1電極上に少なくとも上記発光領域を覆うように設けられた有機層と、
上記有機層上に上記発光領域及び上記非発光領域を覆うように設けられた第2電極と、
を備え、
上記非発光領域において、上記第2電極から上記平坦化膜まで達すると共に内壁面に少なくとも該平坦化膜が露出したホールが形成されていることを特徴とする有機ELデバイス。 - 請求項1に記載された有機ELデバイスにおいて、
上記第1電極は上記非発光領域の一部をも覆うように設けられており、
上記非発光領域において、上記第1電極及び上記平坦化膜を覆うように設けられたエッジカバーをさらに備えたことを特徴とする有機ELデバイス。 - 請求項1又は2に記載された有機ELデバイスにおいて、
上記ホールは、上記平坦化膜を貫通して形成されていることを特徴とする有機ELデバイス。 - 請求項1~3のいずれかに記載された有機ELデバイスにおいて、
上記ホールは、その内壁面が上記基板に対して垂直であることを特徴とする有機ELデバイス。 - 請求項1~4のいずれかに記載された有機ELデバイスにおいて、
上記平坦化膜は、その厚さが2~5μmであることを特徴とする有機ELデバイス。 - 請求項2に記載された有機ELデバイスにおいて、
上記ホールの内壁面に露出した上記平坦化膜は、上記エッジカバーと同一材料で該エッジカバーと一体に形成された被覆膜で被覆されていることを特徴とする有機ELデバイス。 - 請求項1~6のいずれかに記載された有機ELデバイスにおいて、
上記ホールは、その形状が平面視で円形であることを特徴とする有機ELデバイス。 - 請求項1~6のいずれかに記載された有機ELデバイスにおいて、
上記ホールは、その形状が平面視で矩形であることを特徴とする有機ELデバイス。 - 請求項1~8のいずれかに記載された有機ELデバイスにおいて、
上記平坦化膜がポリイミド系樹脂又はアクリル系樹脂で形成されていることを特徴とする有機ELデバイス。 - 請求項1~9のいずれかに記載された有機ELデバイスにおいて、
用途が表示用途であることを特徴とする有機ELデバイス。
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JP2017022003A (ja) * | 2015-07-10 | 2017-01-26 | 双葉電子工業株式会社 | 表示装置 |
WO2022153665A1 (ja) * | 2021-01-12 | 2022-07-21 | 株式会社ジャパンディスプレイ | 表示装置 |
WO2022162496A1 (ja) * | 2021-01-28 | 2022-08-04 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法、表示装置、表示モジュール、及び、電子機器 |
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EP2469986B1 (en) | 2016-06-01 |
US8872166B2 (en) | 2014-10-28 |
US20120181525A1 (en) | 2012-07-19 |
CN102511199B (zh) | 2016-06-15 |
EP2469986A4 (en) | 2015-04-15 |
JP5330541B2 (ja) | 2013-10-30 |
CN102511199A (zh) | 2012-06-20 |
EP2469986A1 (en) | 2012-06-27 |
JPWO2011064914A1 (ja) | 2013-04-11 |
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