WO2011037343A3 - Dispositif de production de lingot de silicium polycristallin pourvu d'un dispositif d'ouverture et de fermeture de porte rotative - Google Patents

Dispositif de production de lingot de silicium polycristallin pourvu d'un dispositif d'ouverture et de fermeture de porte rotative Download PDF

Info

Publication number
WO2011037343A3
WO2011037343A3 PCT/KR2010/006183 KR2010006183W WO2011037343A3 WO 2011037343 A3 WO2011037343 A3 WO 2011037343A3 KR 2010006183 W KR2010006183 W KR 2010006183W WO 2011037343 A3 WO2011037343 A3 WO 2011037343A3
Authority
WO
WIPO (PCT)
Prior art keywords
door
shutting
opening
crucible
polycrystalline silicon
Prior art date
Application number
PCT/KR2010/006183
Other languages
English (en)
Korean (ko)
Other versions
WO2011037343A2 (fr
Inventor
김한성
Original Assignee
주식회사 글로실
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 글로실 filed Critical 주식회사 글로실
Priority to CN2010800428601A priority Critical patent/CN102648311A/zh
Priority to JP2012530767A priority patent/JP5569758B2/ja
Publication of WO2011037343A2 publication Critical patent/WO2011037343A2/fr
Publication of WO2011037343A3 publication Critical patent/WO2011037343A3/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B21/00—Unidirectional solidification of eutectic materials
    • C30B21/02—Unidirectional solidification of eutectic materials by normal casting or gradient freezing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

La présente invention est un dispositif de production de lingot de silicium polycristallin comprenant une chambre de vide, un creuset, un élément chauffant, un suscepteur, une plaque de refroidissement, un dispositif d'ouverture et de fermeture de porte qui est placé entre le creuset et la plaque de refroidissement et limite le dégagement de chaleur afin de faire fondre ou de développer le silicium, un capteur de température et une unité de commande qui reçoit la valeur de sortie du capteur de température et commande la température à l'intérieur du creuset de sorte que le silicium à l'intérieur du creuset fonde et se développe de façon homogène ; le dispositif d'ouverture et de fermeture de porte se compose d'une première porte et d'une seconde porte qui sont pourvues d'une ouverture espacée d'un intervalle prédéfini, et renferme une unité d'entraînement destiné à ouvrir et à fermer sélectivement l'ouverture par la rotation relative entre la première porte et la seconde porte.
PCT/KR2010/006183 2009-09-24 2010-09-10 Dispositif de production de lingot de silicium polycristallin pourvu d'un dispositif d'ouverture et de fermeture de porte rotative WO2011037343A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2010800428601A CN102648311A (zh) 2009-09-24 2010-09-10 具备旋转型门开闭装置的多晶硅铸锭制造装置
JP2012530767A JP5569758B2 (ja) 2009-09-24 2010-09-10 回転型ドア開閉装置を備えた多結晶シリコン鋳塊製造装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0090382 2009-09-24
KR1020090090382A KR101217458B1 (ko) 2009-09-24 2009-09-24 회전형 도어 개폐장치가 구비된 다결정 실리콘 주괴 제조장치

Publications (2)

Publication Number Publication Date
WO2011037343A2 WO2011037343A2 (fr) 2011-03-31
WO2011037343A3 true WO2011037343A3 (fr) 2011-07-14

Family

ID=43796339

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/006183 WO2011037343A2 (fr) 2009-09-24 2010-09-10 Dispositif de production de lingot de silicium polycristallin pourvu d'un dispositif d'ouverture et de fermeture de porte rotative

Country Status (4)

Country Link
JP (1) JP5569758B2 (fr)
KR (1) KR101217458B1 (fr)
CN (1) CN102648311A (fr)
WO (1) WO2011037343A2 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101336748B1 (ko) * 2011-04-14 2013-12-04 주식회사 글로실 다결정 잉곳 성장장치
FR2980489B1 (fr) * 2011-09-28 2014-09-19 Ecm Technologies Four de solidification dirigee de cristaux
KR101308318B1 (ko) * 2011-11-10 2013-09-17 주식회사 엘지실트론 에피텍셜 반응기 및 에피텍셜 반응기의 써셉터 지지장치
US9493357B2 (en) 2011-11-28 2016-11-15 Sino-American Silicon Products Inc. Method of fabricating crystalline silicon ingot including nucleation promotion layer
ITTO20130258A1 (it) * 2013-03-28 2014-09-29 Saet Spa Dispositivo e metodo per produrre un blocco di materiale multicristallino, in particolare silicio, mediante solidificazione direzionale
GB201319671D0 (en) * 2013-11-07 2013-12-25 Ebner Ind Ofenbau Controlling a temperature of a crucible inside an oven
KR101837159B1 (ko) 2015-11-16 2018-04-19 주식회사 한국열기술 개폐장치를 포함하는 용융로 및 그 제어방법
FR3081173B1 (fr) * 2018-05-17 2020-05-29 Ecm Greentech Four de solidification dirigee de cristaux
KR102557909B1 (ko) * 2021-05-31 2023-07-21 (주)지에스엠 개폐식 회전판을 구비한 다결정 실리콘 주상정 제조장치

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003327403A (ja) * 2002-05-09 2003-11-19 Denso Corp 水素供給装置
KR200411950Y1 (ko) * 2006-01-09 2006-03-21 박달재 자동개폐도어가 부설된 컴퓨터용 배기팬
JP2007332022A (ja) * 2006-06-13 2007-12-27 Young Sang Cho 多結晶シリコンインゴット製造装置
KR20080068423A (ko) * 2007-01-19 2008-07-23 주식회사 글로실 태양전지용 다결정 실리콘 주괴 제조 장치
KR20090035336A (ko) * 2007-10-05 2009-04-09 주식회사 글로실 힌지를 이용한 도어 개폐장치가 구비된 태양전지용 다결정실리콘 주괴 제조 장치
JP2009533288A (ja) * 2006-04-14 2009-09-17 ジョンソンディバーシー・インコーポレーテッド 計量及び供給用密封装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0446099A (ja) * 1990-06-12 1992-02-17 Nippon Steel Corp シリコン単結晶体の引上装置
JP3520957B2 (ja) * 1997-06-23 2004-04-19 シャープ株式会社 多結晶半導体インゴットの製造方法および装置
JP3428624B2 (ja) * 1998-06-12 2003-07-22 三菱住友シリコン株式会社 シリコン単結晶の引上げ方法
JP2001163697A (ja) * 1999-12-10 2001-06-19 Sumitomo Metal Ind Ltd 単結晶育成後の石英るつぼ回収方法およびｃｚ単結晶育成装置
JP4444482B2 (ja) * 2000-10-31 2010-03-31 三菱マテリアル株式会社 結晶シリコン製造装置
JP4444483B2 (ja) * 2000-10-31 2010-03-31 三菱マテリアル株式会社 結晶シリコン製造装置
JP3846285B2 (ja) * 2001-11-26 2006-11-15 三菱マテリアル株式会社 結晶製造装置及び結晶製造方法
KR100861412B1 (ko) * 2006-06-13 2008-10-07 조영상 다결정 실리콘 잉곳 제조장치
CN101165226A (zh) * 2007-08-23 2008-04-23 浙江精工科技股份有限公司 多晶硅铸锭炉的热场节能增效装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003327403A (ja) * 2002-05-09 2003-11-19 Denso Corp 水素供給装置
KR200411950Y1 (ko) * 2006-01-09 2006-03-21 박달재 자동개폐도어가 부설된 컴퓨터용 배기팬
JP2009533288A (ja) * 2006-04-14 2009-09-17 ジョンソンディバーシー・インコーポレーテッド 計量及び供給用密封装置
JP2007332022A (ja) * 2006-06-13 2007-12-27 Young Sang Cho 多結晶シリコンインゴット製造装置
KR20080068423A (ko) * 2007-01-19 2008-07-23 주식회사 글로실 태양전지용 다결정 실리콘 주괴 제조 장치
KR20090035336A (ko) * 2007-10-05 2009-04-09 주식회사 글로실 힌지를 이용한 도어 개폐장치가 구비된 태양전지용 다결정실리콘 주괴 제조 장치

Also Published As

Publication number Publication date
CN102648311A (zh) 2012-08-22
KR101217458B1 (ko) 2013-01-07
KR20110032739A (ko) 2011-03-30
JP2013505891A (ja) 2013-02-21
JP5569758B2 (ja) 2014-08-13
WO2011037343A2 (fr) 2011-03-31

Similar Documents

Publication Publication Date Title
WO2011037343A3 (fr) Dispositif de production de lingot de silicium polycristallin pourvu d'un dispositif d'ouverture et de fermeture de porte rotative
CN101319366B (zh) 多晶硅铸锭炉自动控制系统及方法
CN102877117B (zh) 基于多加热器的铸锭炉热场结构及运行方法
WO2012134092A3 (fr) Procédé de fabrication de lingot monocristallin et lingot monocristallin et tranche ainsi fabriqués
WO2010053915A3 (fr) Procédés de préparation d'une masse fondue de poudre de silicium pour une croissance cristalline de silicium
TW200833881A (en) Semiconductor wafers of silicon and method for their production
WO2011136479A3 (fr) Appareil à haut débit pour la fabrication d'un lingot de silicium polycristallin pour une photopile
WO2008131075A3 (fr) Procédé et système de génération de lingot semi-conducteur multicristallin à grand grain
WO2014190165A3 (fr) Procédés d'obtention de lingots de silicium à faible teneur en oxygène
CN101624187A (zh) 一种多晶硅生长铸锭炉
CN202989351U (zh) 基于多加热器的铸锭炉热场结构
WO2008095111A3 (fr) Procédé et système de formation d'un lingot semi-conducteur de pureté supérieur utilisant un semi-conducteur de départ de faible pureté
WO2012099343A3 (fr) Dispositif pour faire croître un lingot de monocristal de saphir chauffé avec une résistance, procédé de fabrication d'un lingot de monocristal de saphir chauffé avec une résistance, lingot de monocristal de saphir et tranche de saphir
TW200643233A (en) Production process of silicon single crystal
CN104131345A (zh) 一种底部气冷的多晶硅半熔铸锭装置及工艺
TW201129730A (en) Single crystal pulling apparatus and single crystal pulling method
WO2011072278A3 (fr) Lingots/tranches de germanium ayant une faible densité de micro-cavités (mpd) ainsi que systèmes et procédés pour leur fabrication
WO2011060905A3 (fr) Dispositif et procédé d'évaporation thermique du silicium
WO2008120435A1 (fr) Procédé de croissance d'un monocristal et appareil de traction de monocristal
CN102242390B (zh) 铸造法生产类似单晶硅锭化料加热方法
WO2010058980A3 (fr) Appareil de croissance de monocristaux
TW200500507A (en) Process for producing single crystal
CN102703973B (zh) 一种生长氧化锌晶体的方法
WO2010053586A3 (fr) Systèmes, procédés et substrats de croissance cristalline de germanium monocristallin
CN107130296A (zh) 一种多晶体硅制作工艺

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201080042860.1

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10818984

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2012530767

Country of ref document: JP

122 Ep: pct application non-entry in european phase

Ref document number: 10818984

Country of ref document: EP

Kind code of ref document: A2