WO2011037343A2 - Dispositif de production de lingot de silicium polycristallin pourvu d'un dispositif d'ouverture et de fermeture de porte rotative - Google Patents

Dispositif de production de lingot de silicium polycristallin pourvu d'un dispositif d'ouverture et de fermeture de porte rotative Download PDF

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Publication number
WO2011037343A2
WO2011037343A2 PCT/KR2010/006183 KR2010006183W WO2011037343A2 WO 2011037343 A2 WO2011037343 A2 WO 2011037343A2 KR 2010006183 W KR2010006183 W KR 2010006183W WO 2011037343 A2 WO2011037343 A2 WO 2011037343A2
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WO
WIPO (PCT)
Prior art keywords
door
opening
crucible
closing device
shaft
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PCT/KR2010/006183
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English (en)
Korean (ko)
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WO2011037343A3 (fr
Inventor
김한성
Original Assignee
주식회사 글로실
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Application filed by 주식회사 글로실 filed Critical 주식회사 글로실
Priority to CN2010800428601A priority Critical patent/CN102648311A/zh
Priority to JP2012530767A priority patent/JP5569758B2/ja
Publication of WO2011037343A2 publication Critical patent/WO2011037343A2/fr
Publication of WO2011037343A3 publication Critical patent/WO2011037343A3/fr

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B21/00—Unidirectional solidification of eutectic materials
    • C30B21/02—Unidirectional solidification of eutectic materials by normal casting or gradient freezing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Definitions

  • the present invention relates to a polycrystalline silicon ingot manufacturing apparatus, and more particularly, to a polycrystalline silicon ingot manufacturing apparatus equipped with a rotary door opening and closing apparatus that can achieve effective silicon growth according to the improvement of thermal balance by supplementing the door opening and closing apparatus. It is about.
  • the production of polycrystalline silicon ingots for solar cells by the casting method is basically characterized by directional solidification.
  • Polycrystalline silicon kernels are melted in a crucible made of quartz or graphite, and then the heat of dissolution of silicon is removed from the bottom of the crucible so that the cooling solidification is also moved from the bottom of the crucible to the upper part. ) Is to get the ingot.
  • the polycrystalline silicon ingot manufactured as described above is deteriorated in terms of electrical efficiency in solar cell manufacturing due to the grain boundaries present inside compared to the single crystal silicon ingot manufactured by the pulling method, but the crystal is in the direction of ingot growth. Since it is composed of columnar phases, it is inferior to about 20% in terms of its overall physical properties. However, it has the advantage of mass production (2 ⁇ 3 times of single crystal pulling method), excellent productivity (2 ⁇ 3 times of single crystal pulling method) and simple manufacturing technology. 2 to 1/3 level.
  • the known casting method is to melt the polycrystalline silicon in advance in the polycrystalline silicon melting section made of quartz before supplying it to the graphite crucible, and then crystal growth by supplying from the lower part to a square or circular graphite crucible maintained at 600 to 1,200 ° C. There is a method of producing a polycrystalline silicon ingot.
  • the method of cooling the lower part by lowering the crucible containing the double molten liquid away from the heater and installing a heat exchanger on the lower part to force heat through the relatively cold cooling plate for the crucible The method is universal.
  • Crucible lowering method is preferred to use a heat exchanger because there is a limit to the discharge of heat to the bottom, but this method may be a phenomenon that the silicon does not melt enough because the heat is lost to the lower heat exchanger in the step of melting the silicon, so the melting step Energy consumption is high in.
  • a device using a heat exchanger is constituted by a kind of gate having a heat insulating material between the heat exchanger and the bottom of the crucible.
  • the gate is closed when the silicon melts, preventing heat from being taken away from the heat exchanger, allowing for a smoother melt, and opening during crystal growth to allow enough heat to escape to the heat exchanger below the gate.
  • FIG. 1 is a prior art filed by the applicant, the gate (in the ingot manufacturing apparatus having a vacuum chamber 10, a heater 20, a crucible 30, a temperature sensor 40 and a gate 40)
  • Various methods have been proposed as a method of constructing a door opener).
  • Commercially applied methods include a horizontal sliding method shown in FIG. 1 and a method of controlling opening and closing by pushing up a gate while the heat exchanger is up using a hinge structure shown in FIG. 2.
  • the horizontal sliding method is disadvantageous for the uniform growth of the ingot because it creates thermal unbalance in the growth space of the equipment. This is undesirable because it is the structure that affects the most important ingot growth.
  • the hinged door method has the advantage of obtaining a symmetrical thermal equilibrium condition, but since the heat exchanger pushes up the door, space is needed in the height direction so that the heat exchanger can open and close the gate sufficiently.
  • the door height In order to increase the size of the ingot in the future, it is necessary to grow the ingot in the width direction rather than in the height direction.
  • the door height In the hinge structure method, the door height must be increased together when the ingot extends to the side, so the height of the equipment is also increased. There is this.
  • the present invention for solving the above problems is to solve the thermal inequality of the polycrystalline silicon growth space, and in response to the future technology prospects, polycrystalline silicon which can increase the door size while eliminating the problems caused by the height direction size constraints of the ingot apparatus
  • An object of the present invention is to provide an ingot manufacturing apparatus.
  • the present invention for achieving the above object is a vacuum chamber of a predetermined size, a crucible provided in the vacuum chamber to accommodate the silicon raw material, a heater for applying heat to melt the silicon raw material in the crucible, A susceptor provided under the crucible, a cooling plate for dissipating heat to grow silicon melted in the crucible, and a door opening and closing device provided between the crucible and the cooling plate to restrain heat release to melt or grow silicon;
  • the door The opening and closing device has a first door and a second door in which openings are formed at predetermined intervals. It characterized in that it comprises a drive unit for selectively opening and closing the opening through the relative rotation between the first door and the second door.
  • the driving unit may include a first driving motor and a second driving motor for rotating the first door and the second door, respectively.
  • first door and the second door is coupled to the first driving motor and the second driving motor, respectively, coupled to the first hollow shaft and the second hollow shaft, the second hollow shaft is inserted into the hollow of the first hollow shaft It is provided, the first hollow shaft is characterized in that the support shaft for supporting the lower susceptor is further provided.
  • the support shaft is provided with the first hollow shaft extending is formed, characterized in that the bearing is further provided in contact with the susceptor.
  • the support shaft is provided separately, characterized in that the bearing is further provided in contact with the first hollow shaft.
  • the support shaft is provided through the hollow of the first hollow shaft, it is characterized in that it is provided to be fixed to the outside separately.
  • the driving unit may include a transfer unit including a shaft configured to move the first door up and down, a drive motor to rotate the second door, and a first door to interlock the first door according to the rotation of the second door. And a locking portion formed on each of the second doors and locked.
  • the shaft is inserted into the hollow of the hollow support shaft provided for supporting the susceptor, the plate is provided at the end of the shaft for transferring the first door up / down by the transfer means, the plate Is coupled to the coupling hole formed in the hollow support shaft is characterized in that for transporting the first door according to the up / down transport.
  • the driving unit may further include an encoder for detecting rotation amounts of the first door and the second door.
  • first and second doors are characterized in that the control of the endothermic amount can be controlled by adjusting the opening of the opening by any angle.
  • the polycrystalline silicon ingot manufacturing apparatus for growing the molten silicon raw material by melting the silicon raw material in the crucible provided in the vacuum chamber of a predetermined size and then expose the cooling plate by the selective opening of the door opening and closing device, the door
  • the opening and closing device is configured with a first door and a second door formed with an opening portion at a predetermined interval, characterized in that it comprises a drive unit for selectively opening and closing the opening through a relative rotation between the first door and the second door.
  • the present invention constructed and operated as described above has the advantage of eliminating the defects of silicon growth by eliminating thermal inequality.
  • the switchgear can reduce the overall size of the ingot manufacturing apparatus and at the same time increase the size of the door there is an advantage that can achieve an effective silicon solidification.
  • 1 to 3 is a schematic cutaway perspective view of the apparatus for producing ingots for solar cells according to the prior art
  • Figure 4 is a perspective view showing a state before opening of the rotary door opening and closing device according to the present invention
  • Figure 5 is a state diagram showing a state after the opening of the rotary door opening and closing apparatus according to the present invention
  • Figure 6 is a cross-sectional view showing an embodiment of the drive means for opening and closing the rotary door according to the present invention
  • Figure 7 is a cross-sectional view showing another embodiment of the drive means for opening and closing the rotary door according to the present invention.
  • FIG. 8 is a cross-sectional view showing another embodiment of FIG.
  • FIG. 9 is a sectional view showing another embodiment of FIG.
  • FIG. 10 is a cross-sectional view showing another embodiment of the drive means for opening and closing the rotary door according to the present invention.
  • FIG. 11 is a cross-sectional view showing an operating state of FIG. 10;
  • FIG. 12 is a cutaway perspective view of a polycrystalline silicon ingot manufacturing apparatus equipped with a rotary door opening and closing device according to the present invention.
  • susceptor 220 heater
  • door opening and closing device 510 first door
  • drive unit 541 first drive motor
  • Figure 4 is a perspective view showing a state before opening of the rotary door opening and closing device according to the invention
  • Figure 5 is a state diagram showing a state after opening of the rotary door opening and closing device according to the present invention
  • Figure 6 is a rotary type according to the present invention Sectional view showing one embodiment of the drive means for the door opening and closing device
  • Figure 7 is a cross-sectional view showing another embodiment of the drive means for opening and closing the rotary door according to the present invention.
  • FIG. 8 is a cross-sectional view showing another embodiment of Figure 7
  • Figure 9 is a cross-sectional view showing another embodiment of Figure 7
  • Figure 10 is a cross-sectional view showing another embodiment of the drive means for opening and closing the rotary door according to the present invention.
  • FIG. 11 is a cross-sectional view illustrating an operating state of FIG. 10
  • FIG. 12 is a cutaway perspective view of a polycrystalline silicon ingot manufacturing apparatus equipped with a rotatable door opening and closing device according to the present invention.
  • Polycrystalline silicon ingot manufacturing apparatus equipped with a rotatable door opening and closing device 500 according to the present invention, a vacuum chamber 100 of a predetermined size, a crucible 200 provided in the vacuum chamber to accommodate the raw material silicon, A heater 220 that applies heat to melt the silicon raw material in the crucible, a susceptor 210 provided below the crucible, and a cooling plate 400 that releases heat to grow silicon melted in the crucible. And a door opening and closing device 500 provided between the crucible and the cooling plate to constrain heat release to melt or grow silicon, a temperature sensor 300 for measuring the temperature of the crucible, and an output value of the temperature sensor.
  • the door opening and closing device includes a first door 510 and a second door 520 having an opening formed at a predetermined interval in a circular structure, and selectively opening and closing the opening through relative rotation between the first door and the second door. It characterized in that it comprises a drive unit 540.
  • a predetermined space is formed, and most components of the ingot manufacturing apparatus are provided in the vacuum chamber 100.
  • the crucible 200 is for accommodating the silicon raw material and melting therein, and is preferably provided at the center of the vacuum chamber 100.
  • the crucible 200 has an open top, and may have a cover (not shown) to open and close the top.
  • the crucible 200 is preferably formed in a cube shape and is made of quartz.
  • a susceptor 210 is provided below the crucible 200, and the susceptor serves to protect the crucible 200.
  • the susceptor material is preferably made of carbon or graphite excellent in heat transfer.
  • a heater 220 is provided along the circumference of the crucible except for the lower side of the crucible provided with the susceptor 210.
  • the heater may be provided in the lower portion of the susceptor 210, in one embodiment of the present invention, the heater 220 is provided only on the upper and circumference of the susceptor 210. This is because it is possible to melt the silicon raw material in the crucible 200 even if the heater 220 is provided only on the top and the circumference of the susceptor 210.
  • the heater is for melting the silicon raw material in the crucible, and the silicon raw material melting point is about 1423 degrees.
  • the power control method of the heater may be operated by a method of controlling a duty ratio of a voltage pulse applied to the heater or a method of controlling a period of the voltage pulse applied to the heater.
  • the temperature sensor 300 may be provided in plural ingot manufacturing apparatuses, and the temperature is measured by installing the heater and the crucible as an example.
  • a cooling plate 400 for growing molten silicon is provided below the susceptor provided below the crucible, and a door opening and closing device 500 is provided between the cooling plate and the susceptor. That is, molten silicon in the crucible grows by the cooling plate 400 by the door opening of the door opening and closing device.
  • the cooling plate 400 has a coolant path formed therein, and the coolant plate that cools by moving the coolant along the coolant path releases the crucible heat.
  • the door opening and closing device 500 is a main technical gist of the present invention.
  • the first door 510 and the second door 520 having the openings are provided at upper and lower positions at regular intervals, and are opened by rotating the door. Opening a certain radius to expose the cooling plate 400 provided on the lower side of the door opening and closing device with the crucible to perform heat dissipation for silicon growth (solidification).
  • the first door 510 and the second door 520 have a radial structure, and the opening is formed in a radial shape in a circular or polygonal structure.
  • the first door and the second door are provided in the same manner, and according to the rotation, the first and second doors are coincident or coincide with each other only by a specific angle, and the heat is released while simultaneously rotating.
  • the determining the opening size of the opening by a specific angle is to properly adjust the endothermic amount.
  • FIG. 6 illustrates a structure of the driving unit 540 as an embodiment of the door opening and closing apparatus 500 according to the present invention, which is a first driving motor 541 for driving the first door and a second door for driving the second door.
  • a two drive motor 542 is provided.
  • each door and the driving motor transmits a driving force to the hollow first hollow shaft and the second hollow shaft.
  • the first hollow shaft is connected to the first door, and the second hollow shaft is connected to the second door.
  • the first hollow shaft has a structure inserted into the hollow inside of the second hollow shaft, and a component such as a bearing (unsigned) may be configured therebetween for smooth rotation.
  • a bearing is installed in order to achieve smooth rotation even outside the second hollow shaft.
  • the first driving motor 541 is directly connected to the first hollow shaft 511 according to the structural characteristics of the first hollow shaft inserted into the second hollow shaft.
  • the drive motor 542 transmits a driving force from one side to the second hollow shaft 521 by using a drive transmission means such as a drive belt or a chain belt.
  • a drive transmission means such as a drive belt or a chain belt.
  • the mechanism of such a drive can be easily changed by those skilled in the art.
  • the driving unit is operated to rotate the first door or the second door to rotate a predetermined amount so that the openings have a specific opening angle.
  • the silicon is grown while performing heat dissipation by the cooling plate 400 provided under the door opening and closing device.
  • the openings of the first door and the second door coincide with each other and the silicon growth starts, the growth of the first door and the second door while simultaneously rotating the first door and the second door is gradually cooled from the bottom while maintaining the thermal equilibrium of the lower side of the crucible.
  • the first and second driving motors may further include a rotation position detecting unit such as an encoder 560.
  • the encoder is provided to detect an amount of rotation for adjusting the opening angle between the doors or to detect and control an appropriate amount of rotation in the entire rotation of the door.
  • FIG. 7 illustrates a structure for supporting the susceptor 210 provided below the crucible by using the structure of the driving unit in a further embodiment according to the present invention.
  • the susceptor At the center of the susceptor, deflection may occur because the load is most applied. Therefore, it has a structure for supporting the center of the susceptor by additionally provided with a support shaft 530 to extend to the first hollow shaft.
  • the support shaft 530 has a bearing 512 at its end contacting the susceptor to help smoothly rotate without friction by the bearing when the first hollow shaft rotates.
  • a support shaft 530 which is divided with the first hollow shaft and one end contacting the susceptor is fixed without friction due to rotation, such as being fixed with the susceptor. It proposes a structure in which the other end of the support shaft is in contact with the rotating first hollow shaft to install a bearing therein.
  • FIG. 9 is a further embodiment according to the present invention, in which the above-described support shaft is not provided on the first hollow shaft line and is provided separately to support the susceptor through the inside of the first hollow shaft hollow.
  • the support shaft is configured to support one end of the susceptor and to pass through the hollow of the first hollow shaft so that the other end thereof is supported by the external structure.
  • a bearing may be provided between the first hollow shaft and the support shaft to support the position with smooth rotation.
  • 10 and 11 is another embodiment of the drive unit according to the present invention, which has a structure for driving by using a single drive motor and a cylinder, the method of driving two doors through the operation of the cylinder and the drive motor Suggest.
  • a first hollow shaft and a second hollow shaft are provided, and the first hollow shaft is not connected to the first door and is extended to support the susceptor.
  • the hollow inside of the first hollow shaft is connected to the cylinder and the shaft flowing up and down penetrates, and the shaft end is provided with a plate 552 for supporting the first door to move up and down.
  • both sides of the first hollow shaft corresponding to the plate position is provided with a coupling hole 531 so that the plate protrudes outward through the coupling hole.
  • the second hollow shaft is connected to the second door to rotate the second door.
  • the locking parts 522 are provided at the first and second doors so that the first doors may interlock as the second door rotates.
  • the locking part is provided to allow the first door to rotate together with the first door according to the rotation of the second door when the first door is seated on the second door.
  • the plate connected to the shaft while the cylinder is operated upward lifts the first door to the upper side.
  • the first driving motor rotates the second door by a predetermined radius while the first door is raised, the locking portions of the first door and the second door are engaged with each other, so that the positions of the first door and the second door can be specified. You are ready.
  • the second door is rotated by the desired angle in the reverse direction, the opening and closing angles of the first door and the second door are specified as desired.
  • the plate supporting the first door is placed on the second door again by the downward driving of the cylinder.
  • the first door is constrained by the rotation of the second door in the state where the first door is placed on the second door, and rotates while maintaining the relative angle with the second door specified by the door opening operation.
  • the door is closed again by moving the first door upward from the second door by the cylinder, and rotating the second door in a reverse direction by the opening angle by rotating the second door, and then moving the first door downward again to release the opening. Will be.
  • the present invention configured as described above has the advantage of eliminating the defects of silicon growth by eliminating thermal inequality by applying the rotary door opening and closing device, and the overall size of the ingot manufacturing apparatus according to the structural features of the rotary opening and closing device. It has the effect of lowering.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

La présente invention est un dispositif de production de lingot de silicium polycristallin comprenant une chambre de vide, un creuset, un élément chauffant, un suscepteur, une plaque de refroidissement, un dispositif d'ouverture et de fermeture de porte qui est placé entre le creuset et la plaque de refroidissement et limite le dégagement de chaleur afin de faire fondre ou de développer le silicium, un capteur de température et une unité de commande qui reçoit la valeur de sortie du capteur de température et commande la température à l'intérieur du creuset de sorte que le silicium à l'intérieur du creuset fonde et se développe de façon homogène ; le dispositif d'ouverture et de fermeture de porte se compose d'une première porte et d'une seconde porte qui sont pourvues d'une ouverture espacée d'un intervalle prédéfini, et renferme une unité d'entraînement destiné à ouvrir et à fermer sélectivement l'ouverture par la rotation relative entre la première porte et la seconde porte.
PCT/KR2010/006183 2009-09-24 2010-09-10 Dispositif de production de lingot de silicium polycristallin pourvu d'un dispositif d'ouverture et de fermeture de porte rotative WO2011037343A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2010800428601A CN102648311A (zh) 2009-09-24 2010-09-10 具备旋转型门开闭装置的多晶硅铸锭制造装置
JP2012530767A JP5569758B2 (ja) 2009-09-24 2010-09-10 回転型ドア開閉装置を備えた多結晶シリコン鋳塊製造装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0090382 2009-09-24
KR1020090090382A KR101217458B1 (ko) 2009-09-24 2009-09-24 회전형 도어 개폐장치가 구비된 다결정 실리콘 주괴 제조장치

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WO2011037343A2 true WO2011037343A2 (fr) 2011-03-31
WO2011037343A3 WO2011037343A3 (fr) 2011-07-14

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FR2980489A1 (fr) * 2011-09-28 2013-03-29 Ecm Technologies Four de solidification dirigee de cristaux
ITTO20130258A1 (it) * 2013-03-28 2014-09-29 Saet Spa Dispositivo e metodo per produrre un blocco di materiale multicristallino, in particolare silicio, mediante solidificazione direzionale
US9493357B2 (en) 2011-11-28 2016-11-15 Sino-American Silicon Products Inc. Method of fabricating crystalline silicon ingot including nucleation promotion layer
US10094040B2 (en) 2013-11-07 2018-10-09 Ebner Industrieofenbau Gmbh Controlling a temperature of a crucible inside an oven

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KR101336748B1 (ko) * 2011-04-14 2013-12-04 주식회사 글로실 다결정 잉곳 성장장치
KR101308318B1 (ko) * 2011-11-10 2013-09-17 주식회사 엘지실트론 에피텍셜 반응기 및 에피텍셜 반응기의 써셉터 지지장치
KR101837159B1 (ko) 2015-11-16 2018-04-19 주식회사 한국열기술 개폐장치를 포함하는 용융로 및 그 제어방법
FR3081173B1 (fr) * 2018-05-17 2020-05-29 Ecm Greentech Four de solidification dirigee de cristaux
KR102557909B1 (ko) * 2021-05-31 2023-07-21 (주)지에스엠 개폐식 회전판을 구비한 다결정 실리콘 주상정 제조장치

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CN102648311A (zh) 2012-08-22
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KR20110032739A (ko) 2011-03-30
KR101217458B1 (ko) 2013-01-07
JP2013505891A (ja) 2013-02-21

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