CN102648311A - 具备旋转型门开闭装置的多晶硅铸锭制造装置 - Google Patents

具备旋转型门开闭装置的多晶硅铸锭制造装置 Download PDF

Info

Publication number
CN102648311A
CN102648311A CN2010800428601A CN201080042860A CN102648311A CN 102648311 A CN102648311 A CN 102648311A CN 2010800428601 A CN2010800428601 A CN 2010800428601A CN 201080042860 A CN201080042860 A CN 201080042860A CN 102648311 A CN102648311 A CN 102648311A
Authority
CN
China
Prior art keywords
opening
ingot casting
polycrystalline silicon
smelting furnace
possesses
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010800428601A
Other languages
English (en)
Chinese (zh)
Inventor
金翰成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GLOSIL株式会社
Korea Research Institute of Chemical Technology KRICT
Original Assignee
Korea Research Institute of Chemical Technology KRICT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea Research Institute of Chemical Technology KRICT filed Critical Korea Research Institute of Chemical Technology KRICT
Publication of CN102648311A publication Critical patent/CN102648311A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B21/00—Unidirectional solidification of eutectic materials
    • C30B21/02—Unidirectional solidification of eutectic materials by normal casting or gradient freezing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN2010800428601A 2009-09-24 2010-09-10 具备旋转型门开闭装置的多晶硅铸锭制造装置 Pending CN102648311A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2009-0090382 2009-09-24
KR1020090090382A KR101217458B1 (ko) 2009-09-24 2009-09-24 회전형 도어 개폐장치가 구비된 다결정 실리콘 주괴 제조장치
PCT/KR2010/006183 WO2011037343A2 (fr) 2009-09-24 2010-09-10 Dispositif de production de lingot de silicium polycristallin pourvu d'un dispositif d'ouverture et de fermeture de porte rotative

Publications (1)

Publication Number Publication Date
CN102648311A true CN102648311A (zh) 2012-08-22

Family

ID=43796339

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800428601A Pending CN102648311A (zh) 2009-09-24 2010-09-10 具备旋转型门开闭装置的多晶硅铸锭制造装置

Country Status (4)

Country Link
JP (1) JP5569758B2 (fr)
KR (1) KR101217458B1 (fr)
CN (1) CN102648311A (fr)
WO (1) WO2011037343A2 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101336748B1 (ko) * 2011-04-14 2013-12-04 주식회사 글로실 다결정 잉곳 성장장치
FR2980489B1 (fr) * 2011-09-28 2014-09-19 Ecm Technologies Four de solidification dirigee de cristaux
KR101308318B1 (ko) * 2011-11-10 2013-09-17 주식회사 엘지실트론 에피텍셜 반응기 및 에피텍셜 반응기의 써셉터 지지장치
US9493357B2 (en) 2011-11-28 2016-11-15 Sino-American Silicon Products Inc. Method of fabricating crystalline silicon ingot including nucleation promotion layer
ITTO20130258A1 (it) * 2013-03-28 2014-09-29 Saet Spa Dispositivo e metodo per produrre un blocco di materiale multicristallino, in particolare silicio, mediante solidificazione direzionale
GB201319671D0 (en) * 2013-11-07 2013-12-25 Ebner Ind Ofenbau Controlling a temperature of a crucible inside an oven
KR101837159B1 (ko) 2015-11-16 2018-04-19 주식회사 한국열기술 개폐장치를 포함하는 용융로 및 그 제어방법
FR3081173B1 (fr) * 2018-05-17 2020-05-29 Ecm Greentech Four de solidification dirigee de cristaux
KR102557909B1 (ko) * 2021-05-31 2023-07-21 (주)지에스엠 개폐식 회전판을 구비한 다결정 실리콘 주상정 제조장치

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0446099A (ja) * 1990-06-12 1992-02-17 Nippon Steel Corp シリコン単結晶体の引上装置
CN1209472A (zh) * 1997-06-23 1999-03-03 夏普公司 生产多晶半导体晶锭的工艺和设备
JP2002137996A (ja) * 2000-10-31 2002-05-14 Mitsubishi Materials Corp 結晶シリコン製造装置
JP2002145695A (ja) * 2000-10-31 2002-05-22 Mitsubishi Materials Corp 結晶シリコン製造装置
CN101089233A (zh) * 2006-06-13 2007-12-19 赵荣相 多晶硅锭制造装置
CN101165226A (zh) * 2007-08-23 2008-04-23 浙江精工科技股份有限公司 多晶硅铸锭炉的热场节能增效装置
KR100852686B1 (ko) * 2007-01-19 2008-08-19 주식회사 글로실 태양전지용 다결정 실리콘 주괴 제조 장치
CN101440518A (zh) * 2007-10-05 2009-05-27 Glosil株式会社 安装有采用铰链的门开关装置的太阳能电池用多结晶硅锭块制造装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3428624B2 (ja) * 1998-06-12 2003-07-22 三菱住友シリコン株式会社 シリコン単結晶の引上げ方法
JP2001163697A (ja) * 1999-12-10 2001-06-19 Sumitomo Metal Ind Ltd 単結晶育成後の石英るつぼ回収方法およびｃｚ単結晶育成装置
JP3846285B2 (ja) * 2001-11-26 2006-11-15 三菱マテリアル株式会社 結晶製造装置及び結晶製造方法
JP4000898B2 (ja) * 2002-05-09 2007-10-31 株式会社デンソー 水素供給装置
KR200411950Y1 (ko) * 2006-01-09 2006-03-21 박달재 자동개폐도어가 부설된 컴퓨터용 배기팬
AU2006342248B2 (en) * 2006-04-14 2013-01-17 Diversey, Inc. Metering and dispensing closure
US8057598B2 (en) * 2006-06-13 2011-11-15 Young Sang Cho Manufacturing equipment for polysilicon ingot

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0446099A (ja) * 1990-06-12 1992-02-17 Nippon Steel Corp シリコン単結晶体の引上装置
CN1209472A (zh) * 1997-06-23 1999-03-03 夏普公司 生产多晶半导体晶锭的工艺和设备
JP2002137996A (ja) * 2000-10-31 2002-05-14 Mitsubishi Materials Corp 結晶シリコン製造装置
JP2002145695A (ja) * 2000-10-31 2002-05-22 Mitsubishi Materials Corp 結晶シリコン製造装置
CN101089233A (zh) * 2006-06-13 2007-12-19 赵荣相 多晶硅锭制造装置
KR100852686B1 (ko) * 2007-01-19 2008-08-19 주식회사 글로실 태양전지용 다결정 실리콘 주괴 제조 장치
CN101165226A (zh) * 2007-08-23 2008-04-23 浙江精工科技股份有限公司 多晶硅铸锭炉的热场节能增效装置
CN101440518A (zh) * 2007-10-05 2009-05-27 Glosil株式会社 安装有采用铰链的门开关装置的太阳能电池用多结晶硅锭块制造装置

Also Published As

Publication number Publication date
WO2011037343A3 (fr) 2011-07-14
WO2011037343A2 (fr) 2011-03-31
JP5569758B2 (ja) 2014-08-13
KR20110032739A (ko) 2011-03-30
KR101217458B1 (ko) 2013-01-07
JP2013505891A (ja) 2013-02-21

Similar Documents

Publication Publication Date Title
CN102648311A (zh) 具备旋转型门开闭装置的多晶硅铸锭制造装置
KR100955221B1 (ko) 힌지를 이용한 도어 개폐장치가 구비된 태양전지용 다결정실리콘 주괴 제조 장치
CN102131963B (zh) 用于制造锭块的设备和方法
CN102877117A (zh) 基于多加热器的铸锭炉热场结构及运行方法
CN102330148A (zh) 低缺陷高产出多晶硅铸锭方法及其热场结构
CN102732959A (zh) 多晶硅铸锭炉和多晶硅铸锭方法
CN103966657B (zh) 一种多晶硅和准单晶硅铸锭炉及其使用方法
KR100852686B1 (ko) 태양전지용 다결정 실리콘 주괴 제조 장치
CN202989351U (zh) 基于多加热器的铸锭炉热场结构
CN106637402A (zh) 单晶硅平收尾方法及制备方法
CN102021644A (zh) 一种晶硅铸锭炉热场热门控制装置
CN102936748B (zh) 一种铸锭炉的加热器
CN103132142B (zh) 多晶硅锭及其制造方法
CN103422165A (zh) 一种多晶硅及其制备方法
KR101345747B1 (ko) 반도체 또는 금속산화물 잉곳 제조장치
CN201162068Y (zh) 多晶硅铸锭炉
KR100931018B1 (ko) 걸림지지대를 이용한 도어 개폐장치가 구비된 태양전지용다결정 실리콘 주괴 제조 장치
CN103160934B (zh) 一种生长晶体材料时的温度梯度控制装置及其方法
CN201962416U (zh) 晶硅铸锭炉热场热门控制装置
CN101311345A (zh) 多晶硅制造方法及制造装置
CN201162064Y (zh) 多晶硅制造装置
CN101294307A (zh) 回旋式连续供料的晶体生长方法及其装置
KR101382176B1 (ko) 윙 타입 도어 개폐장치를 구비한 다결정 실리콘 주괴 제조장치
CN202064030U (zh) 一种单晶炉
CN115354390B (zh) 一种高均匀性铸锭单晶热场结构

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20120822