WO2011030572A1 - 水晶発振装置 - Google Patents
水晶発振装置 Download PDFInfo
- Publication number
- WO2011030572A1 WO2011030572A1 PCT/JP2010/052080 JP2010052080W WO2011030572A1 WO 2011030572 A1 WO2011030572 A1 WO 2011030572A1 JP 2010052080 W JP2010052080 W JP 2010052080W WO 2011030572 A1 WO2011030572 A1 WO 2011030572A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- crystal
- sealed space
- pressure
- substrate
- oscillation device
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 84
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 238000007789 sealing Methods 0.000 claims abstract description 32
- 230000010355 oscillation Effects 0.000 claims description 59
- 239000010409 thin film Substances 0.000 claims description 33
- 239000012790 adhesive layer Substances 0.000 claims description 9
- 239000012298 atmosphere Substances 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 7
- 229920005989 resin Polymers 0.000 claims description 7
- 239000010453 quartz Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000003949 imides Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000000615 nonconductor Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- -1 silane compound Chemical class 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
- H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
Definitions
- the present invention relates to a crystal oscillation device, and more particularly to a crystal oscillation device including a crystal oscillator provided in a sealed space.
- a crystal oscillation device using a crystal resonator having a crystal substrate is widely used as an oscillation device capable of realizing very high accuracy, for example, in applications requiring extremely high oscillation accuracy such as a watch.
- the crystal oscillator is usually disposed in the sealed space. Even if the crystal oscillator is placed in the sealed space, if there is a gas in the sealed space, the frequency characteristics of the crystal oscillator will fluctuate due to the presence of the gas. There is a case. Therefore, for example, as described in Patent Document 1 below, the crystal oscillator is usually vacuum-sealed.
- the present invention has been made in view of the above points, and an object of the present invention is to provide a crystal oscillation device that has a high oscillation accuracy and the oscillation frequency is unlikely to vary even when the drive level varies. .
- the crystal oscillation device includes a support substrate, a crystal oscillator, and a sealing member.
- the crystal oscillator includes a crystal substrate and a pair of electrodes that apply a voltage to the crystal substrate.
- the crystal oscillator is mounted on a support substrate.
- the sealing member is provided on the support substrate so as to form a sealing space for sealing the crystal oscillator together with the support substrate.
- the pressure in the sealed space is less than atmospheric pressure and is 15000 Pa or more.
- the pressure in the sealed space is 80000 Pa or less. According to this configuration, since the inside of the sealed space is further suppressed to atmospheric pressure or more, variation in oscillation frequency can be more effectively suppressed. Further, the resonance resistance (CI) value can be reduced.
- the sealed space is an air atmosphere. According to this configuration, it becomes easier to manufacture the crystal oscillation device.
- a thin film covering the surface of the crystal oscillator is formed. According to this configuration, it is possible to more effectively suppress fluctuations in the oscillation frequency caused by fluctuations in the drive level.
- the thin film is an organic thin film or an inorganic thin film.
- the crystal oscillation device further includes a resin adhesive layer that bonds the sealing member and the support substrate. According to this configuration, it becomes easier to manufacture the crystal oscillation device. Further, since the sealing member can be fixed at a low temperature, the residual stress of the sealing member and the support substrate can be reduced.
- the pressure in the sealed space in which the crystal oscillator is disposed is less than atmospheric pressure and is set to 15000 Pa or more. For this reason, while being able to suppress the fluctuation
- FIG. 1 is a schematic exploded perspective view of the crystal oscillation device according to the first embodiment.
- FIG. 2 is a schematic arrow view taken along line II-II in FIG.
- FIG. 3 is a schematic exploded perspective view of the crystal oscillation device according to the second embodiment.
- FIG. 4 is a schematic cross-sectional view of the crystal oscillation device according to the second embodiment.
- FIG. 5 is a graph showing the relationship between the drive level and the frequency fluctuation amount.
- FIG. 6 is a graph showing the relationship between the pressure in the sealed space and the resonance resistance value.
- crystal oscillation device shown in FIGS. 1 and 3 As an example, the crystal oscillators shown in FIGS. 1 and 3 are merely examples, and the present invention is not limited to these crystal oscillators.
- FIG. 1 is a schematic exploded perspective view of the crystal oscillation device according to the present embodiment.
- FIG. 2 is a schematic cross-sectional view of the crystal oscillation device according to the present embodiment.
- the crystal oscillation device 1 includes a support substrate 10.
- the support substrate 10 is a substrate for supporting a crystal oscillator 20 described later.
- the support substrate 10 is not particularly limited as long as it is a substrate that can support the crystal oscillator 20.
- the support substrate 10 can be composed of, for example, a metal substrate, an alloy substrate, a ceramic substrate, a resin substrate, or the like.
- the crystal oscillator 20 is mounted on the support substrate 10. Specifically, the crystal oscillator 20 is mounted on the support substrate 10 so that a gap is formed between the crystal substrate 22 and the support substrate 10.
- the crystal oscillator 20 includes a crystal substrate 22 and a pair of electrodes 21 and 23 that apply a voltage to the crystal substrate 20.
- the electrode 21 is provided on the upper main surface of the crystal substrate 22, and the electrode 23 is provided on the lower main surface of the crystal substrate 22 so as to face the electrode 21 through the crystal substrate 22. Is provided.
- the electrode 21 provided on the upper main surface of the quartz substrate 22 is drawn to the lower main surface, and the electrodes 21 and 23 are formed on the support substrate 10 via the conductive adhesive layer 12. Is connected to the wiring electrode 10a formed on the substrate.
- the material for forming the electrodes 21 and 23 is not particularly limited as long as it has conductivity.
- the electrodes 21 and 23 are made of, for example, a metal such as Cu, Al, Ag, Au, Pt, Ni, or Cr, or an alloy containing at least one metal such as Cu, Al, Ag, Au, Pt, Ni, or Cr. Can be formed.
- a sealing member 15 is provided on the support substrate 10. Specifically, the peripheral edge of the sealing member 15 is bonded to the support substrate 10 via the adhesive layer 13 and the insulating layer 14. Thereby, a sealing space 15 a for sealing the crystal oscillator 20 is formed by the support substrate 10 and the sealing member 15.
- the sealing member 15 is not particularly limited as long as it can form a sealing space.
- the sealing member 15 can be formed of a metal, alloy, or resin cap.
- the adhesive layer 13 is not particularly limited as long as the sealing member 15 and the support substrate 10 can be bonded to each other.
- the adhesive layer 13 can be formed of a resin adhesive.
- the resin adhesive include, for example, epoxy-based, silicon-based, urethane-based, and imide-based adhesives.
- the adhesive layer 13 may be one obtained by baking a paste of glass or metal oxide (non-conductor).
- the insulating layer 14 is particularly effective when, for example, the sealing member 15 has conductivity, but it is not an essential constituent member and may not be provided.
- the insulating layer 14 can be formed of, for example, an epoxy-based, silicon-based, urethane-based, or imide-based resin, a material in which a paste of glass or metal oxide (non-conductor) is baked.
- the pressure in the sealed space 15a is less than atmospheric pressure (100,000 Pa) and is set to 15000 Pa or more.
- atmospheric pressure 100,000 Pa
- the pressure in the sealed space 15a is less than atmospheric pressure. That is, the pressure in the sealed space 15a is less than 100,000 Pa. For this reason, even if the temperature of the sealing space 15a rises, the pressure in the sealing space 15a is unlikely to be positive. Therefore, it is possible to suppress the fluctuation of the oscillation frequency accompanying the temperature rise of the sealed space 15a.
- the oscillation frequency greatly fluctuates when the drive level fluctuates.
- the pressure in the sealing space 15a is 15000 Pa or more.
- the drive level varies and the temperature of the sealed space 15a varies. Oscillation frequency fluctuation can be suppressed. As a result, high oscillation accuracy can be realized.
- the pressure in the sealed space 15a is preferably 80000 Pa or less. Further, by setting the pressure in the sealed space 15a to 80000 Pa or less, the resonance resistance value can be reduced.
- the atmosphere in the sealed space 15a is not particularly limited.
- the atmosphere may be a nitrogen atmosphere, an argon atmosphere, a carbon dioxide atmosphere, an air atmosphere, or the like. preferable. In this case, it becomes easy to manufacture the crystal oscillation device.
- FIG. 3 is a schematic exploded perspective view of the crystal oscillation device according to the second embodiment.
- FIG. 4 is a schematic cross-sectional view of the crystal oscillation device according to the second embodiment.
- thin films 24 a and 24 b that cover the surface of the crystal oscillator 20 are provided.
- the thin film 24 a covers the surface of the crystal oscillator 20 on the electrode 21 side.
- the thin film 24 b covers the surface of the crystal oscillator 20 on the electrode 23 side.
- the types of the thin films 24a and 24b are not particularly limited, and the thin films 24a and 24b may be, for example, organic thin films or inorganic thin films. Whether the thin films 24a and 24b are organic thin films or inorganic thin films, fluctuations in oscillation frequency due to fluctuations in drive level can be more effectively suppressed. When the thin films 24a and 24b are organic thin films, it is more preferable that the thin films 24a and 24b are organic thin films because fluctuations in oscillation frequency accompanying fluctuations in drive level can be more effectively suppressed.
- silane compound etc. are mentioned as a specific example of an organic thin film.
- the inorganic thin film include Ag and Au.
- the thickness of the thin films 24a, 24b is not particularly limited, but is preferably about several nm to several hundred nm, and more preferably about 5 nm to 100 nm.
- the pressure in the sealed space is 80000 Pa and when the pressure in the sealed space was 100000 Pa (atmospheric pressure), the amount of fluctuation in the oscillation frequency accompanying the change in drive level was almost the same. From this, it is understood that the pressure in the sealed space is more preferably 80000 Pa or less in consideration of preventing the sealed space from becoming a positive pressure.
- the oscillation frequency fluctuation amount accompanying the fluctuation of the drive level can be further reduced.
- the amount of oscillation frequency fluctuation accompanying the fluctuation of the drive level can be further reduced as compared with the case of providing the inorganic thin film. From this result, it is found that it is preferable to provide the thin films 24a and 24b, and it is more preferable to provide the thin films 24a and 24b made of organic thin films.
- the resonance resistance value can be reduced by setting the pressure in the sealed space to less than atmospheric pressure. It can also be seen that the resonance resistance value can be further reduced by setting the pressure in the sealed space to 80000 Pa or less.
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Abstract
Description
図1は、本実施形態に係る水晶発振装置の略図的分解斜視図である。図2は、本実施形態に係る水晶発振装置の略図的断面図である。
図3は、第2の実施形態に係る水晶発振装置の略図的分解斜視図である。図4は、第2の実施形態に係る水晶発振装置の略図的断面図である。
図1または図3に示す構成の水晶発振子を作成し、封止空間内の圧力を種々変動させてドライブレベルと発振周波数変動量との関係を調べた。結果を、図5に示す。
10…支持基板
10a…配線電極
12…導電性接着剤層
13…接着剤層
14…絶縁層
15…封止部材
15a…封止空間
20…水晶発振子
21,23…電極
22…水晶基板
24a、24b…薄膜
Claims (6)
- 支持基板と、
水晶基板と、前記水晶基板に電圧を印加する一対の電極とを有し、前記支持基板上に搭載されている水晶発振子と、
前記支持基板と共に前記水晶発振子を封止する封止空間を形成するように、前記支持基板上に設けられている封止部材とを備え、
前記封止空間内の圧力は、大気圧未満であって、15000Pa以上である、水晶発振装置。 - 前記封止空間内の圧力は80000Pa以下である、請求項1に記載の水晶発振装置。
- 前記封止空間が、空気雰囲気である、請求項1または2に記載の水晶発振装置。
- 前記水晶発振子の表面を覆う薄膜が形成されている、請求項1~3のいずれか一項に記載の水晶発振装置。
- 前記薄膜は、有機薄膜または無機薄膜である、請求項4に記載の水晶発振装置。
- 前記封止部材と前記支持基板とを接着している樹脂接着剤層をさらに備える、請求項1~5のいずれか一項に記載の水晶発振装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201080040503.1A CN102484465B (zh) | 2009-09-14 | 2010-02-12 | 晶体振荡装置 |
JP2010529174A JP5093355B2 (ja) | 2009-09-14 | 2010-02-12 | 水晶発振装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2009-211440 | 2009-09-14 | ||
JP2009211440 | 2009-09-14 |
Publications (1)
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WO2011030572A1 true WO2011030572A1 (ja) | 2011-03-17 |
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PCT/JP2010/052080 WO2011030572A1 (ja) | 2009-09-14 | 2010-02-12 | 水晶発振装置 |
Country Status (4)
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JP (1) | JP5093355B2 (ja) |
CN (1) | CN102484465B (ja) |
TW (1) | TWI449331B (ja) |
WO (1) | WO2011030572A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06338751A (ja) * | 1993-05-31 | 1994-12-06 | Kinseki Ltd | 水晶振動子 |
JP2003318653A (ja) * | 2002-04-24 | 2003-11-07 | Daishinku Corp | 圧電振動デバイス |
JP2007201858A (ja) * | 2006-01-27 | 2007-08-09 | Epson Toyocom Corp | 水晶振動子、高精度水晶発振器 |
JP2008054272A (ja) * | 2006-07-25 | 2008-03-06 | Epson Toyocom Corp | 圧電デバイスの製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4008258B2 (ja) * | 2002-02-15 | 2007-11-14 | セイコーインスツル株式会社 | 圧電振動子の製造方法 |
JP2005297221A (ja) * | 2004-04-06 | 2005-10-27 | Smk Corp | 振動部品の樹脂封止方法 |
US20060255691A1 (en) * | 2005-03-30 | 2006-11-16 | Takahiro Kuroda | Piezoelectric resonator and manufacturing method thereof |
JP2008005471A (ja) * | 2006-05-23 | 2008-01-10 | Matsushita Electric Ind Co Ltd | 圧電発振器およびその製造方法 |
WO2008038383A1 (fr) * | 2006-09-28 | 2008-04-03 | Pioneer Corporation | Appareil et procédé de contrôle |
TW200834833A (en) * | 2007-02-14 | 2008-08-16 | Besdon Technology Corp | Subminiature electronic device having hermetic cavity and method of manufacturing the same |
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2010
- 2010-02-12 JP JP2010529174A patent/JP5093355B2/ja active Active
- 2010-02-12 WO PCT/JP2010/052080 patent/WO2011030572A1/ja active Application Filing
- 2010-02-12 CN CN201080040503.1A patent/CN102484465B/zh active Active
- 2010-08-26 TW TW099128566A patent/TWI449331B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06338751A (ja) * | 1993-05-31 | 1994-12-06 | Kinseki Ltd | 水晶振動子 |
JP2003318653A (ja) * | 2002-04-24 | 2003-11-07 | Daishinku Corp | 圧電振動デバイス |
JP2007201858A (ja) * | 2006-01-27 | 2007-08-09 | Epson Toyocom Corp | 水晶振動子、高精度水晶発振器 |
JP2008054272A (ja) * | 2006-07-25 | 2008-03-06 | Epson Toyocom Corp | 圧電デバイスの製造方法 |
Also Published As
Publication number | Publication date |
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CN102484465B (zh) | 2015-04-08 |
CN102484465A (zh) | 2012-05-30 |
JPWO2011030572A1 (ja) | 2013-02-04 |
TWI449331B (zh) | 2014-08-11 |
TW201119223A (en) | 2011-06-01 |
JP5093355B2 (ja) | 2012-12-12 |
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