201119223 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種水晶振盪裝置，更詳細而言，係關 於具備設於密封空間内之水晶振盪器之水晶振盪裝置。 【先前技術】 以往’使用具有水晶基板之水晶振盪器之水晶振盪裝 置’作為能實現非常高精度之振盪裝置，大多用於例如時 鐘等之要求非常高振盪精度之用途。然而，在水晶振盪器 曝露於大氣之狀態下，會有因外部干擾而無法充分獲得高 精度之振盪特性之情形。因此，一般而言，水晶振盪器係 配置於密封空間内。又，即使將水晶振盪器配置於密封空 間内之情形，在密封空間内存在有氣體時，會有因該氣體 存在導致水晶振盪器之頻率特性變動之情形。是以，例如 下述專利文獻1所記載，-般而言，水晶振t器係真 封。 專利文獻1 :日本特開昭55 — 2236〇7號公報 然而，將水晶振盪器真空密封時，BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a crystal oscillation device, and more particularly to a crystal oscillation device having a crystal oscillator provided in a sealed space. [Prior Art] Conventionally, a crystal oscillation device using a crystal oscillator having a crystal substrate has been used as an oscillation device capable of achieving very high precision, and is often used for applications requiring extremely high oscillation accuracy such as a clock. However, when the crystal oscillator is exposed to the atmosphere, there is a case where high-accuracy oscillation characteristics cannot be sufficiently obtained due to external disturbance. Therefore, in general, the crystal oscillator is disposed in a sealed space. Further, even when the crystal oscillator is disposed in the sealed space, when there is a gas in the sealed space, the frequency characteristics of the crystal oscillator may fluctuate due to the presence of the gas. For example, as described in Patent Document 1 below, the crystal vibrator is generally sealed. Patent Document 1: Japanese Patent Laid-Open No. 55-2236〇7 However, when the crystal oscillator is vacuum-sealed,
τ 右激發振盛電力ί IS 動位準）變動，則水晶振盪器之振 (’τ Right-excited vibrating power ί IS moving level), the crystal oscillator vibrates (’
^ „ 鴻+大幅變動，因& I 有不易實現高振盈精度之問題。 會 本發明係有鑑於上述問題而構成， 種即使驅動位準變動時振i頻率其目的在於提供-精度之水晶振盪裝置。 I動、具有高振盪 201119223 本發明之水晶振盪裝置具備支承基板、水晶振盪器、 及密封構件。水晶振盪器具有水晶基板、及將電壓施加至 水晶基板之一對電極。水晶振盪器係裝載於支承基板上。 密封構件係、以與丨承基板一起形成將纟晶振M器加以密封 之密封空間之方式設於支承基板上。密封空間内之壓力為 60000Pa〜800〇〇pa 〇 本發明之水晶振盪裝置之另一特定形態甲，密封空E 為空氣環境氣氛。根據此構成，更容易製造水晶振盈裝置 本發明之水晶振盈裝置之另一特定形態中，形成有名 蓋水晶振廬器表面之薄臈。根據此構成，能更有效 驅動位準之變動導致之振盪頻率之變動。 本發明之水晶振堡裝置之另一特定形態中， 機薄膜或無機薄膜。 $ 本發明之水晶振盥裝置之另_特定形態中， 備將密封構件與支承基板加以接著之樹脂接著劑層。根摘 = 鼻成，更容易製造水晶振堡裝置。又，由於在低 密封構件’因此能使密封構件 代 再1千或支承基板之殘留應力變 本發明中，設配置有水晶振堡器之密封空間内之壓* 為 60000Pa〜80000Pa。因 <婴力 月t*抑制因驅動位準之變說古 致之振盪頻率之變動，且在笨 雙動薄^ „ Hong+ has changed greatly, because & I has difficulty in achieving high vibration accuracy. The present invention is constructed in view of the above problems, and the crystal oscillation device is provided for the purpose of providing the -accuracy even if the driving level is changed. I move and have high oscillation 201119223 The crystal oscillation device of the present invention includes a support substrate, a crystal oscillator, and a sealing member. The crystal oscillator has a crystal substrate and a voltage applied to one of the crystal substrates. The crystal oscillator is loaded. The sealing member is provided on the support substrate so as to form a sealed space for sealing the crystal oscillator M together with the bearing substrate. The pressure in the sealed space is 60000 Pa to 800 〇〇pa. Another specific form of the crystal oscillating device, the sealing space E is an air atmosphere. According to this configuration, it is easier to manufacture the crystal vibrating device. In another specific form of the crystal vibrating device of the present invention, a crystal vibrator is formed. According to this configuration, it is possible to more effectively drive the fluctuation of the oscillation frequency caused by the fluctuation of the level. In another specific form of the crystal vibrating device, a machine film or an inorganic film is used. In another embodiment of the crystal vibrating device of the present invention, a sealing resin member and a support substrate are provided with a resin adhesive layer. = Nasal, it is easier to manufacture the crystal vibrating device. Moreover, due to the low sealing member', it is possible to change the residual stress of the sealing member to a thousand or the supporting substrate. In the present invention, a sealed space provided with a crystal vibrating device is provided. The pressure inside is *60000~80000Pa. Because < infant strength month t* suppresses the change of the oscillation frequency due to the change of the driving level, and is in the stupid double moving thin
呆形態下能抑制因密封空M 溫度上昇導致之振盪頻率之 β Τ二間之 度。 變動。是以’能實現高振邀稍 【實施方式】 以下，針對實施本發明 之較佳形態 例舉圖 及圆3 4 201119223 所示之水晶振盪裝置進行說明。然而，圖1及圖3所示之 水晶振盪裝置僅為例示，本發明並不限於該等水晶振盈茫 置。 (第1實施形態） 圖1係本實施形態之水晶振盪裝置之概略分解立體 圖。圖2係本實施形態之水晶振盪裝置之概略剖面圖。 如圖1及圖2所示，水晶振盪裝置！具備支承基板1〇。 支承基板10係用以支承後述水晶振盪器2〇之基板。支承 基板10只要為能支承水晶振盪器2〇之基板則不特別限 定。支承基板10可藉由例如金屬基板、合金基板、陶瓷基 板、樹脂基板等構成β 在支承基板10之上裝載有水晶振盪器20。詳細而言， 水晶振盪器20係以在水晶基板22與支承基板1〇之間形成 有間隙之方式構裝於支承基板上。 水曰日振盪裔20具備水晶基板22、及將電壓施加至水晶 基板22之—對電極21，23。本實施形態中，在水晶基板22 之上側主面上設有電極2卜在水晶基板22之下側主面上以 隔著水晶基板22與電極21對向之方式設有電極23。設置 在水曰曰基22之上側主面上之電極21係引出至下側主 面’電極21,23係透過導電性接著劑層12連接於形成在支 承基板10上之配線電極1 〇a。In the dead form, it is possible to suppress the degree of β Τ between the oscillation frequencies caused by the rise in the temperature of the sealed air M. change. The present invention will be described with reference to the preferred embodiments of the present invention and the crystal oscillation device shown in Japanese Patent No. 3 201119223. However, the crystal oscillation device shown in Figs. 1 and 3 is merely illustrative, and the present invention is not limited to the crystal oscillation devices. (First Embodiment) Fig. 1 is a schematic exploded perspective view of a crystal oscillation device according to the present embodiment. Fig. 2 is a schematic cross-sectional view showing the crystal oscillation device of the embodiment. As shown in Figure 1 and Figure 2, the crystal oscillator! A support substrate 1 is provided. The support substrate 10 is a substrate for supporting a crystal oscillator 2 to be described later. The support substrate 10 is not particularly limited as long as it can support the crystal oscillator. The support substrate 10 can be made of, for example, a metal substrate, an alloy substrate, a ceramic substrate, a resin substrate or the like. The crystal oscillator 20 is mounted on the support substrate 10. Specifically, the crystal oscillator 20 is mounted on the support substrate so as to form a gap between the crystal substrate 22 and the support substrate 1A. The otter 20 has a crystal substrate 22 and a counter electrode 21, 23 for applying a voltage to the crystal substrate 22. In the present embodiment, the electrode 2 is provided on the upper main surface of the crystal substrate 22, and the electrode 23 is provided on the lower main surface of the crystal substrate 22 so as to face the electrode 21 via the crystal substrate 22. The electrode 21 provided on the upper main surface of the water raft base 22 is led to the lower main surface electrode 21, and the 23 is connected to the wiring electrode 1 〇a formed on the support substrate 10 through the conductive adhesive layer 12.
電極 2 1，2 3 夕 士、if I 之形成材料只要具有導電性則不特別限 定。電極21，23可Μ出你丨4 0 错由例如 Cu、AI、Ag、Au、pt、⑷、 等之金屬或含有Cu、A卜Ap aThe material for forming the electrode 2 1, 2 3 and if I is not particularly limited as long as it has conductivity. The electrodes 21, 23 can pick up a metal such as Cu, AI, Ag, Au, pt, (4), etc. or contain Cu, Ab Ap a
Ag、Au、Pt、Ni、Cr等之金屬之 至少一種之合金等形成。 201119223 又，在支承基板10之上設有密封構件15。詳細而言， 密封構件15之周緣部係透過接著劑層13與絕緣層14接著 於支承基板10。藉此，藉由支承基板1〇與密封構件15形 成將水晶振盪器20加以密封之密封空間1 。 搶封構件1 5只要能形成密封空間則不特別限定，例 如，可藉由金屬、合金或樹脂製之罩體構成。 接著劑層13只要為能將密封構件15與支承基板丨〇加 以接著則不特別限定，例如，可藉由樹脂接著劑形成。作 為樹脂接著劑之具體例，可舉出例如環氧系、矽氧系、氨 酯系、醯亞胺系之接著劑等。又，接著劑層13為煅燒有玻 璃或金屬氧化物（絕緣體）之糊者亦可。 絕緣層1 4例如在密封構件丨5具有導電性之情形特別 有效，但並非必需之構成構件，不設置亦可。絕緣層14可 藉由例如環氧系、矽氧系、氨酯系、醯亞胺系之樹脂，或 煅燒有玻璃或金屬氧化物（絕緣體）之糊者等形成。 本實施形態中，設密封空間15a内之壓力為大氣壓 (l〇〇〇〇〇Pa)未滿、15000Pa以上。例如’密封空間15a内之 壓力為大氣壓以上之情形，密封空間15a之溫度只要些許上 幵，則密封空間15a内之壓力成為正壓，因此振盪頻率大幅 變動。相對於此，本實施形態中，如上述，設密封空間i5a 内之壓力為大氣壓未滿。亦即，設密封空間15 a内之壓力為 lOOOOOPa未滿。因此，即使密封空間l5a之溫度上昇之情 形’密封空間15a内之壓力亦不易成為正壓。是以，能抑制 振盈頻率隨著密封空間15a内之溫度上昇而變動。 又’例如，密封空間1 5a内之壓力為真空之情形，若驅 6 201119223 動位準變動，則振盪頻率大幅變動。相對於此’本實施形 態中，設密封空間15a内之壓力為15〇〇〇Pa以上。藉此，由 下述實驗例亦可證明，能抑制振盪頻率隨著驅動位準之變 動而變動。 從上述說明可知，如本實施形態所示，藉由使密封空 間15a内之壓力為大氣壓（1〇〇〇〇〇Pa)未滿、i5〇〇〇pa以上， 能抑制振盪頻率隨著驅動位準之變動或密封空間15&内之 溫度變動而變動。其結果，可實現高振盪精度。 此外’使密封空間15a内之壓力為15〇〇〇Pa以上時能抑 制因驅動位準之變動導致之振盪頻率變動之原因，可考慮 為由存在於水晶振盪器2〇周圍之氣體抑制（減振）水晶振盪 器20之振動。 從更有效抑制振盪頻率隨著密封空間丨5a内之溫度上 昇而變動之觀點觀之，密封空間15a内之壓力較佳為 8_0Pa以下。又，藉由使密封空間⑸内之壓力為麵心 以下，能使譜振電阻值變小。 &外m形態中’密封μ i 5 a内之環境氣氛並不 特別限定，例如，a氮氣環境氣氛、氬氣環境氣氛、二氧 化碳環境氣氛、空氣環境氣氛等亦可，其中，氣環境 氣氛較佳。此時，容易製造水晶振盪裝置。 以下，針對實施本發明之較佳形態之另一例進行說 明。此外，以下說明中，對具有與上述第丨實施形態實質 上共通功能之構件賦予共通符號以省略其說明。 (第2實施形態） '第2貫轭形態之水晶振盪裝置之概略分解立體 201119223 圖。圖4係第2實施形態之水晶振盪裝置之概略剖面圖。 如圖3及圖4所示，本實施形態中，設置覆蓋水晶振 盪器20表面之薄膜24a，24b。具體而言，薄膜24a覆蓋水 晶振盈器20之電極21側表面β另一方面，薄膜24b覆蓋 水晶振盪器2 0之電極2 3側表面。 如上述，藉由設置薄膜24a，24b，由下述實驗例亦可證 明’能更有效抑制振盪頻率隨著驅動位準之變動而變動。 薄膜24a，24b之種類並不特別限定，薄膜24a，24b例 如為有機薄膜或無機薄膜亦可。薄膜24a，24b為有機薄膜 之情形或無機薄膜之情形皆能更有效抑制振盪頻率隨著驅 動位準之變動而變動。薄膜24a，24b為有機薄膜之情形， 月b進一步更有效抑制振盪頻率隨著驅動位準之變動而變 動，因此薄膜24a，24b為有機薄膜更佳。 此外，作為有機薄膜之具體例，可舉出矽烷化合物等。 作為無機薄膜之具體例，可舉出Ag、Αιι等。 又，薄膜24a，⑽之厚度並不特別限定，例如以數_ 〜數程度為佳，以5nm〜1〇〇nm程度為更佳。 (實驗例） 製作圖1或圖3所示構成之水晶振盪器，使密封空 内之壓力產生各種變動’調查驅動位準與振盪頻率變動 之關係。其結果顯示於圖5。 丰皮動 從圖5所不之結果可知’密封空 lOOOPa、20〇〇Pa 夕样π 刀马 50Pa 月形，任—情形皆因驅動位準之變動 致振盪頻率大幅變動 .M〇〇〇p S動相對於此，可知設密封空間之壓 為15000Pa以上時，酿备乂六-往 動位準之變動導致之振盪頻率之 8 201119223 動量變小。從此結果可知， 15000Pa以上，可抑制驅動位準 動。 藉由使密封空間之壓力為 之變動導致之振盪頻率之變 在狁封I間之壓力為8〇〇〇〇Pa之情形與密封空間 為100000Pa(大氣壓）之情形，振盈頻率隨著驅動位 準之變動之變動量大致相同。由此可％，考慮使密封空間 會成為正壓，更佳為使密封空間之壓力為以下。 ^又，從圖5所示之結果可知，藉由設置薄膜24a，24b， 7使振盪頻率隨著驅動位準之變動之變動量更小。其中， 可头相較於a又置無機薄膜之情形，設置有機薄膜之情形能 使振盪頻率p过著驅動位準之變動之變動量進一步更小。從 此結果可知，較佳為設置薄膜24a, 24b，更佳為設置由有機 薄膜構成之薄膜24a，24b。 接著’使密封空間内之壓力產生各種變化來製作複數 個圖1所不之水晶振盪器2〇，調查密封空間内之壓力與諧 振電阻值之關係。其結果顯示於圖6。 從圖6所示之結果可知，藉由使密封空間内之壓力為 大氣壓未滿’能使諸振電阻值變小。又，可知藉由使密封 工間内之壓力為80000Pa以下，能使諧振電阻值進一步變 /J、〇 【圖式簡單說明】 圖1係第1實施形態之水晶振盪裝置之概略分解立體 圖2係圖1中線π 一 π之概略視圖。 201119223 圖3係第2實施形態之水晶振盪裝置之概略分解立體 圖。 圖4係第2實施形態之水晶振盪裝置之概略剖面圖。 圖5係顯示驅動位準與頻率變動量之關係的圖表。 圖6係顯示密封空間内之壓力與諳振電阻值之關係的 圖表。 【主要元件符號說明】 1 水晶振盪裝置 10 支承基板 10a 配線電極 12 導電性接著劑層 13 接著劑層 14 絕緣層 15 密封構件 15a 密封空間 20 水晶振盈裔 21, 23 電極 22 水晶基板 24a, 24b 薄膜 10An alloy of at least one of metals such as Ag, Au, Pt, Ni, Cr, or the like is formed. 201119223 Further, a sealing member 15 is provided on the support substrate 10. Specifically, the peripheral portion of the sealing member 15 passes through the adhesive layer 13 and the insulating layer 14 to follow the support substrate 10. Thereby, the sealed space 1 for sealing the crystal oscillator 20 is formed by the support substrate 1A and the sealing member 15. The sealing member 15 is not particularly limited as long as it can form a sealed space, and for example, it can be formed of a metal, an alloy or a resin. The subsequent layer 13 is not particularly limited as long as it can be applied to the sealing member 15 and the support substrate, and can be formed, for example, by a resin adhesive. Specific examples of the resin binder include an epoxy-based, an anthracene-based, a urethane-based, and a quinone-based adhesive. Further, the adhesive layer 13 may be a paste in which a glass or a metal oxide (insulator) is fired. The insulating layer 14 is particularly effective in the case where the sealing member 5 is electrically conductive, for example, but it is not a necessary constituent member and may not be provided. The insulating layer 14 can be formed of, for example, an epoxy-based, an anthracene-based, a urethane-based, a quinone-based resin, or a paste in which a glass or a metal oxide (insulator) is fired. In the present embodiment, the pressure in the sealed space 15a is such that the atmospheric pressure (10 Pa) is less than 15,000 Pa or more. For example, when the pressure in the sealed space 15a is equal to or higher than the atmospheric pressure, the temperature in the sealed space 15a is slightly increased, and the pressure in the sealed space 15a becomes a positive pressure, so that the oscillation frequency greatly fluctuates. On the other hand, in the present embodiment, as described above, the pressure in the sealed space i5a is such that the atmospheric pressure is not full. That is, it is assumed that the pressure in the sealed space 15a is less than 100OOPa. Therefore, even if the temperature of the sealed space 15a rises, the pressure in the sealed space 15a does not easily become a positive pressure. Therefore, it is possible to suppress the fluctuation frequency from fluctuating as the temperature in the sealed space 15a rises. Further, for example, the pressure in the sealed space 15a is a vacuum, and if the movement level of the drive 6 201119223 changes, the oscillation frequency greatly fluctuates. On the other hand, in the present embodiment, the pressure in the sealed space 15a is set to 15 〇〇〇 Pa or more. As a result, it can be confirmed from the following experimental examples that the oscillation frequency can be suppressed from varying with the change of the driving level. As is apparent from the above description, as shown in the present embodiment, by suppressing the pressure in the sealed space 15a to be less than atmospheric pressure (1 〇〇〇〇〇 Pa) and i5 〇〇〇 pa or more, it is possible to suppress the oscillation frequency with the drive position. The change or the temperature in the sealed space 15 & As a result, high oscillation accuracy can be achieved. Further, when the pressure in the sealed space 15a is 15 〇〇〇Pa or more, the fluctuation of the oscillation frequency due to the fluctuation of the driving level can be suppressed, and it can be considered that the gas existing around the crystal oscillator 2 is suppressed (minus). Vibration) The vibration of the crystal oscillator 20. From the viewpoint of more effectively suppressing the fluctuation of the oscillation frequency as the temperature in the sealed space 丨5a rises, the pressure in the sealed space 15a is preferably 8_0Pa or less. Further, by setting the pressure in the sealed space (5) to be less than the center of the face, the spectral resistance value can be made small. In the outer m form, the ambient atmosphere in the 'sealing μ i 5 a' is not particularly limited. For example, a nitrogen atmosphere, an argon atmosphere, a carbon dioxide atmosphere, an air atmosphere, and the like may be used. good. At this time, it is easy to manufacture a crystal oscillation device. Hereinafter, another example of a preferred embodiment of the present invention will be described. In the following description, components having substantially the same functions as those of the above-described embodiment are denoted by the same reference numerals, and their description will be omitted. (Second Embodiment) A schematic exploded perspective of a crystal oscillation device of a second yoke type 201119223. Fig. 4 is a schematic cross-sectional view showing a crystal oscillation device according to a second embodiment. As shown in Figs. 3 and 4, in the present embodiment, the films 24a, 24b covering the surface of the crystal oscillator 20 are provided. Specifically, the film 24a covers the side surface β of the electrode 21 of the crystal vibrator 20, and the film 24b covers the side surface of the electrode 2 3 of the crystal oscillator 20. As described above, by providing the films 24a and 24b, it can be confirmed from the following experimental examples that the oscillation frequency can be more effectively suppressed from fluctuating with the fluctuation of the driving level. The type of the films 24a, 24b is not particularly limited, and the films 24a, 24b may be, for example, an organic film or an inorganic film. In the case where the films 24a, 24b are organic thin films or inorganic thin films, the oscillation frequency can be more effectively suppressed from fluctuating with the change of the driving level. In the case where the films 24a, 24b are organic thin films, the month b is more effective in suppressing the oscillation frequency from changing as the driving level fluctuates, so that the films 24a, 24b are more preferably organic films. Moreover, as a specific example of an organic film, a decane compound etc. are mentioned. Specific examples of the inorganic thin film include Ag, Αι, and the like. Further, the thickness of the films 24a and (10) is not particularly limited, and is preferably in the range of several _ to several, more preferably about 5 nm to 1 〇〇 nm. (Experimental Example) A crystal oscillator having the configuration shown in Fig. 1 or Fig. 3 was produced, and various changes were made in the pressure in the sealed space. The relationship between the driving level and the fluctuation of the oscillation frequency was investigated. The result is shown in Fig. 5. From the results of Fig. 5, it can be seen that the 'sealed empty lOOOPa, 20〇〇Pa 夕 π 刀 刀 50Pa shape, any situation is caused by the change of the driving level, the oscillation frequency changes greatly. M〇〇〇p On the other hand, when the pressure of the sealed space is 15000 Pa or more, it is known that the oscillation frequency is 8 201119223 due to the fluctuation of the six-way moving level. From this result, it is understood that the drive position can be suppressed by 15,000 Pa or more. The oscillation frequency is changed by the pressure of the sealed space, and the pressure between the seals I is 8 〇〇〇〇 Pa and the sealed space is 100000 Pa (atmospheric pressure), and the vibration frequency follows the drive position. The amount of change in the quasi-variation is about the same. Therefore, it is considered that the sealed space becomes a positive pressure, and it is more preferable that the pressure in the sealed space is as follows. Further, as is apparent from the results shown in Fig. 5, by providing the films 24a, 24b, 7, the variation of the oscillation frequency with the fluctuation of the driving level is made smaller. Among them, in the case where the inorganic film is disposed in comparison with a, the case where the organic film is provided can further reduce the variation of the oscillation frequency p over the driving level. From the results, it is preferable to provide the films 24a, 24b, and it is more preferable to provide the films 24a, 24b made of an organic film. Then, a variety of changes in the pressure in the sealed space were made to produce a plurality of crystal oscillators 2 in Fig. 1, and the relationship between the pressure in the sealed space and the value of the resonance resistance was investigated. The result is shown in Fig. 6. As is apparent from the results shown in Fig. 6, the values of the vibration resistances can be made small by making the pressure in the sealed space less than atmospheric pressure. In addition, it is understood that the resonance resistance value can be further changed by the pressure in the sealing chamber to be 80000 Pa or less. 〇 [Fig. 1 is a schematic exploded perspective view of the crystal oscillation device of the first embodiment. A schematic view of the line π - π in Fig. 1. 201119223 Fig. 3 is a schematic exploded perspective view of the crystal oscillation device of the second embodiment. Fig. 4 is a schematic cross-sectional view showing a crystal oscillation device according to a second embodiment. Fig. 5 is a graph showing the relationship between the driving level and the amount of frequency variation. Fig. 6 is a graph showing the relationship between the pressure in the sealed space and the value of the resonance resistance. [Description of main component symbols] 1 Crystal oscillation device 10 Support substrate 10a Wiring electrode 12 Conductive adhesive layer 13 Subsequent layer 14 Insulating layer 15 Sealing member 15a Sealing space 20 Crystal vibrating body 21, 23 Electrode 22 Crystal substrate 24a, 24b Film 10