WO2011021802A3 - Appareil de génération de faisceau d'électrons - Google Patents

Appareil de génération de faisceau d'électrons Download PDF

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Publication number
WO2011021802A3
WO2011021802A3 PCT/KR2010/005236 KR2010005236W WO2011021802A3 WO 2011021802 A3 WO2011021802 A3 WO 2011021802A3 KR 2010005236 W KR2010005236 W KR 2010005236W WO 2011021802 A3 WO2011021802 A3 WO 2011021802A3
Authority
WO
WIPO (PCT)
Prior art keywords
electron beam
surface portion
hole
housing
generating apparatus
Prior art date
Application number
PCT/KR2010/005236
Other languages
English (en)
Korean (ko)
Other versions
WO2011021802A2 (fr
Inventor
박용운
박성주
고인수
김창범
홍주호
문성익
Original Assignee
포항공과대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 포항공과대학교 산학협력단 filed Critical 포항공과대학교 산학협력단
Priority to US13/122,109 priority Critical patent/US8736169B2/en
Priority to GB1106284.1A priority patent/GB2484763B/en
Priority to JP2011532032A priority patent/JP5386588B2/ja
Priority to DE112010000022.0T priority patent/DE112010000022B4/de
Priority to CN201080002969.2A priority patent/CN102187422B/zh
Publication of WO2011021802A2 publication Critical patent/WO2011021802A2/fr
Publication of WO2011021802A3 publication Critical patent/WO2011021802A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
    • H01J23/12—Vessels; Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J7/00—Details not provided for in the preceding groups and common to two or more basic types of discharge tubes or lamps
    • H01J7/14—Means for obtaining or maintaining the desired pressure within the vessel
    • H01J7/16—Means for permitting pumping during operation of the tube or lamp

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Particle Accelerators (AREA)
  • Lasers (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

La présente invention porte sur un appareil de génération de faisceau d'électrons capable de réduire l'émittance d'un faisceau d'électrons. À cette fin, l'appareil de génération de faisceau d'électrons selon la présente invention comprend : un boîtier ayant une partie de surface arrière pour générer un faisceau d'électrons, une partie de surface avant ayant un trou d'émission de faisceau d'électrons pour émettre vers l'extérieur le faisceau d'électrons généré, et une partie de surface latérale pour relier l'une à l'autre la partie de surface arrière et la partie de surface avant, la partie surface latérale ayant un premier trou, et la partie de surface latérale opposée, tournée vers ladite surface avec le premier trou, ayant un second trou pour réduire un déséquilibre de champ électrique provoqué par le premier trou; et un guide d'ondes agencé à la partie de surface latérale pour introduire des ondes électromagnétiques dans le boîtier à travers le premier trou. Le faisceau laser appliqué dans le boîtier génère un faisceau d'électrons et le faisceau d'électrons ainsi généré est accéléré par les ondes électromagnétiques introduites dans le boîtier.
PCT/KR2010/005236 2009-08-21 2010-08-10 Appareil de génération de faisceau d'électrons WO2011021802A2 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US13/122,109 US8736169B2 (en) 2009-08-21 2010-08-10 Electron beam generating apparatus
GB1106284.1A GB2484763B (en) 2009-08-21 2010-08-10 Electron beam generating apparatus
JP2011532032A JP5386588B2 (ja) 2009-08-21 2010-08-10 電子ビーム発生装置
DE112010000022.0T DE112010000022B4 (de) 2009-08-21 2010-08-10 Elektronenstrahlerzeugungsvorrichtung
CN201080002969.2A CN102187422B (zh) 2009-08-21 2010-08-10 电子束发生装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090077796A KR101041271B1 (ko) 2009-08-21 2009-08-21 전자빔 발생장치 및 전자빔 발생방법
KR10-2009-0077796 2009-08-21

Publications (2)

Publication Number Publication Date
WO2011021802A2 WO2011021802A2 (fr) 2011-02-24
WO2011021802A3 true WO2011021802A3 (fr) 2011-06-16

Family

ID=43607442

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/005236 WO2011021802A2 (fr) 2009-08-21 2010-08-10 Appareil de génération de faisceau d'électrons

Country Status (7)

Country Link
US (1) US8736169B2 (fr)
JP (1) JP5386588B2 (fr)
KR (1) KR101041271B1 (fr)
CN (1) CN102187422B (fr)
DE (1) DE112010000022B4 (fr)
GB (1) GB2484763B (fr)
WO (1) WO2011021802A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101364104B1 (ko) * 2012-08-21 2014-02-20 포항공과대학교 산학협력단 전자 빔 발생 장치 및 이를 이용한 전자 빔 발생 방법
CN104241799A (zh) * 2014-09-19 2014-12-24 电子科技大学 一种用于真空电子器件的双端输入或输出谐振器
KR20180078884A (ko) * 2016-12-30 2018-07-10 한국원자력연구원 전자빔 가속기용 rf 광전자총

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000223056A (ja) * 1999-01-29 2000-08-11 Toshiba Corp 電子ビーム発生装置
KR100783409B1 (ko) * 2005-12-27 2007-12-11 엘지전자 주식회사 마그네트론
KR100787168B1 (ko) * 2006-02-10 2007-12-21 (주)인텍 전자빔 발생장치

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0636344B2 (ja) 1985-03-08 1994-05-11 株式会社日立製作所 液体金属イオン発生方法とその装置
JPH0766749B2 (ja) 1985-05-30 1995-07-19 株式会社東芝 超高周波電子管
JPS63128523A (ja) 1986-11-19 1988-06-01 Toshiba Corp ジヤイロトロン装置
JPH0817081B2 (ja) * 1988-10-31 1996-02-21 株式会社東芝 超高周波発振管装置
JPH0612992A (ja) * 1992-06-26 1994-01-21 Toshiba Corp ジャイロトロン装置
JPH06176723A (ja) 1992-12-07 1994-06-24 Hitachi Ltd 電子線発生装置
JPH0750135A (ja) 1993-08-05 1995-02-21 Nec Corp 多空胴クライストロン
JP3119285B2 (ja) 1993-08-24 2000-12-18 株式会社日立製作所 光陰極とこれを用いた電子銃並びに加速器
GB9322934D0 (en) 1993-11-08 1994-01-26 Eev Ltd Linear electron beam tube arrangements
JPH1123482A (ja) 1997-06-30 1999-01-29 Advantest Corp ビームの照射位置調整方法、レーザビームを用いた異物検出装置、走査型電子顕微鏡及び組成分析装置
JP3647592B2 (ja) 1997-03-04 2005-05-11 松下電器産業株式会社 プラズマ源及びこれを用いたイオン源並びにプラズマ処理装置
JP3268237B2 (ja) * 1997-07-29 2002-03-25 住友重機械工業株式会社 フォトカソードを用いた電子銃
JP3707932B2 (ja) 1998-06-26 2005-10-19 川崎重工業株式会社 高周波電子銃
US6448722B1 (en) * 2000-03-29 2002-09-10 Duly Research Inc. Permanent magnet focused X-band photoinjector

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000223056A (ja) * 1999-01-29 2000-08-11 Toshiba Corp 電子ビーム発生装置
KR100783409B1 (ko) * 2005-12-27 2007-12-11 엘지전자 주식회사 마그네트론
KR100787168B1 (ko) * 2006-02-10 2007-12-21 (주)인텍 전자빔 발생장치

Also Published As

Publication number Publication date
CN102187422B (zh) 2014-08-13
GB201106284D0 (en) 2011-05-25
KR20110020085A (ko) 2011-03-02
GB2484763B (en) 2015-03-04
GB2484763A (en) 2012-04-25
DE112010000022T5 (de) 2012-12-27
US8736169B2 (en) 2014-05-27
CN102187422A (zh) 2011-09-14
KR101041271B1 (ko) 2011-06-14
JP5386588B2 (ja) 2014-01-15
JP2012506122A (ja) 2012-03-08
US20120133281A1 (en) 2012-05-31
DE112010000022B4 (de) 2015-02-12
WO2011021802A2 (fr) 2011-02-24

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