WO2008002403A3 - Motif de balayage pour implanteur ionique - Google Patents

Motif de balayage pour implanteur ionique Download PDF

Info

Publication number
WO2008002403A3
WO2008002403A3 PCT/US2007/014008 US2007014008W WO2008002403A3 WO 2008002403 A3 WO2008002403 A3 WO 2008002403A3 US 2007014008 W US2007014008 W US 2007014008W WO 2008002403 A3 WO2008002403 A3 WO 2008002403A3
Authority
WO
WIPO (PCT)
Prior art keywords
scan pattern
workpiece
ion implanter
ion beam
front surface
Prior art date
Application number
PCT/US2007/014008
Other languages
English (en)
Other versions
WO2008002403A2 (fr
Inventor
Joseph P Dzengeleski
Original Assignee
Varian Semiconductor Equipment
Joseph P Dzengeleski
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment, Joseph P Dzengeleski filed Critical Varian Semiconductor Equipment
Priority to KR1020097000152A priority Critical patent/KR101365103B1/ko
Priority to JP2009516520A priority patent/JP5109209B2/ja
Priority to CN2007800208224A priority patent/CN101461028B/zh
Publication of WO2008002403A2 publication Critical patent/WO2008002403A2/fr
Publication of WO2008002403A3 publication Critical patent/WO2008002403A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/36—Gas-filled discharge tubes for cleaning surfaces while plating with ions of materials introduced into the discharge, e.g. introduced by evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30483—Scanning
    • H01J2237/30488—Raster scan

Abstract

Implanteur ionique comportant un générateur de faisceau ionique configuré pour générer un faisceau ionique et le diriger sur une pièce à usiner, le mouvement relatif entre le faisceau ionique et la pièce à usiner produisant un motif de balayage sur une surface avant de la pièce à usiner. Le motif de balayage présente une caractéristique oscillante sur une partie au moins de ladite surface avant de ladite pièce à usiner.
PCT/US2007/014008 2006-06-23 2007-06-14 Motif de balayage pour implanteur ionique WO2008002403A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020097000152A KR101365103B1 (ko) 2006-06-23 2007-06-14 이온 주입기용 주사 패턴
JP2009516520A JP5109209B2 (ja) 2006-06-23 2007-06-14 イオン注入装置およびその方法
CN2007800208224A CN101461028B (zh) 2006-06-23 2007-06-14 离子植入机的扫描图案

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/473,860 US7498590B2 (en) 2006-06-23 2006-06-23 Scan pattern for an ion implanter
US11/473,860 2006-06-23

Publications (2)

Publication Number Publication Date
WO2008002403A2 WO2008002403A2 (fr) 2008-01-03
WO2008002403A3 true WO2008002403A3 (fr) 2008-04-03

Family

ID=38846168

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/014008 WO2008002403A2 (fr) 2006-06-23 2007-06-14 Motif de balayage pour implanteur ionique

Country Status (6)

Country Link
US (1) US7498590B2 (fr)
JP (1) JP5109209B2 (fr)
KR (1) KR101365103B1 (fr)
CN (1) CN101461028B (fr)
TW (1) TWI397097B (fr)
WO (1) WO2008002403A2 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100059688A1 (en) * 2006-07-06 2010-03-11 Ion Beam Applications S.A. Method And Software For Irradiating A Target Volume With A Particle Beam And Device Implementing Same
EP2228817B1 (fr) * 2009-03-09 2012-07-18 IMS Nanofabrication AG Fonction de dispersion globale du point dans la formation de motifs à plusieurs faisceaux
US9147554B2 (en) * 2009-07-02 2015-09-29 Axcelis Technologies, Inc. Use of beam scanning to improve uniformity and productivity of a 2D mechanical scan implantation system
CH701762A2 (de) * 2009-09-14 2011-03-15 Markus R Mueller Verfahren und Vorrichtung zum Herstellen von beliebigen Produkten mit gewünschten Eigenschaften durch computergesteuertes Zusammensetzen von Atomen und/oder Molekülen.
US8378313B2 (en) * 2011-03-31 2013-02-19 Axcelis Technologies, Inc. Uniformity of a scanned ion beam
US8421039B2 (en) 2011-03-31 2013-04-16 Axcelis Technologies, Inc. Method and apparatus for improved uniformity control with dynamic beam shaping
US9340870B2 (en) 2013-01-25 2016-05-17 Advanced Ion Beam Technology, Inc. Magnetic field fluctuation for beam smoothing
US9190248B2 (en) * 2013-09-07 2015-11-17 Varian Semiconductor Equipment Associates, Inc. Dynamic electrode plasma system
US9612534B2 (en) 2015-03-31 2017-04-04 Tokyo Electron Limited Exposure dose homogenization through rotation, translation, and variable processing conditions
WO2016160301A1 (fr) * 2015-03-31 2016-10-06 Tokyo Electron Limited Homogénéisation d'une dose d'exposition par l'intermédiaire de conditions de rotation, de translation et de traitement variable
US10657737B2 (en) 2017-10-23 2020-05-19 Toyota Motor Engineering & Manufacturing North America, Inc. Vehicle error identification system

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4449051A (en) * 1982-02-16 1984-05-15 Varian Associates, Inc. Dose compensation by differential pattern scanning
EP0431757A2 (fr) * 1989-11-07 1991-06-12 Varian Associates, Inc. Mécanisme de balayage pour implanteur d'ions
EP1306879A2 (fr) * 2001-10-26 2003-05-02 Nissin Electric Co., Ltd. Procédé et appareil d'implantation ionique

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4736107A (en) * 1986-09-24 1988-04-05 Eaton Corporation Ion beam implanter scan control system
US5132544A (en) * 1990-08-29 1992-07-21 Nissin Electric Company Ltd. System for irradiating a surface with atomic and molecular ions using two dimensional magnetic scanning
JP3341749B2 (ja) * 1999-12-28 2002-11-05 日新電機株式会社 イオン注入方法およびイオン注入装置
KR100815635B1 (ko) * 2000-05-15 2008-03-20 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. 작업편에 이온을 주입하기 위한 방법 및 이온 주입 장치
US6903350B1 (en) * 2004-06-10 2005-06-07 Axcelis Technologies, Inc. Ion beam scanning systems and methods for improved ion implantation uniformity
US7442944B2 (en) * 2004-10-07 2008-10-28 Varian Semiconductor Equipment Associates, Inc. Ion beam implant current, spot width and position tuning
US20060113489A1 (en) * 2004-11-30 2006-06-01 Axcelis Technologies, Inc. Optimization of beam utilization
US7589333B2 (en) * 2006-09-29 2009-09-15 Axcelis Technologies, Inc. Methods for rapidly switching off an ion beam

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4449051A (en) * 1982-02-16 1984-05-15 Varian Associates, Inc. Dose compensation by differential pattern scanning
EP0431757A2 (fr) * 1989-11-07 1991-06-12 Varian Associates, Inc. Mécanisme de balayage pour implanteur d'ions
EP1306879A2 (fr) * 2001-10-26 2003-05-02 Nissin Electric Co., Ltd. Procédé et appareil d'implantation ionique

Also Published As

Publication number Publication date
KR101365103B1 (ko) 2014-02-26
CN101461028A (zh) 2009-06-17
TWI397097B (zh) 2013-05-21
US20080073575A1 (en) 2008-03-27
CN101461028B (zh) 2010-09-29
WO2008002403A2 (fr) 2008-01-03
JP5109209B2 (ja) 2012-12-26
KR20090024239A (ko) 2009-03-06
US7498590B2 (en) 2009-03-03
JP2009541935A (ja) 2009-11-26
TW200802492A (en) 2008-01-01

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