WO2011010872A3 - 금속 배선 형성을 위한 식각액 조성물 - Google Patents

금속 배선 형성을 위한 식각액 조성물 Download PDF

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Publication number
WO2011010872A3
WO2011010872A3 PCT/KR2010/004782 KR2010004782W WO2011010872A3 WO 2011010872 A3 WO2011010872 A3 WO 2011010872A3 KR 2010004782 W KR2010004782 W KR 2010004782W WO 2011010872 A3 WO2011010872 A3 WO 2011010872A3
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WO
WIPO (PCT)
Prior art keywords
etchant composition
etching
layer film
forming
metal line
Prior art date
Application number
PCT/KR2010/004782
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English (en)
French (fr)
Other versions
WO2011010872A2 (ko
Inventor
임민기
이석준
장상훈
박영철
Original Assignee
동우 화인켐 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020090066921A external-priority patent/KR101602499B1/ko
Priority claimed from KR1020090077208A external-priority patent/KR101754417B1/ko
Application filed by 동우 화인켐 주식회사 filed Critical 동우 화인켐 주식회사
Priority to CN201080033704.9A priority Critical patent/CN102471898B/zh
Publication of WO2011010872A2 publication Critical patent/WO2011010872A2/ko
Publication of WO2011010872A3 publication Critical patent/WO2011010872A3/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/20—Acidic compositions for etching aluminium or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)

Abstract

본 발명은 금속 배선 형성을 위한 식각액 조성물에 관한 것이다. 상기 식각액 조성물은 티타늄, 티타늄 합금, 알루미늄 및 알루미늄 합금으로 이루어진 군으로부터 선택되는 1종 이상의 금속으로 형성된 단일막 또는 이중막 이상의 다중막을 일괄적으로 습식 식각할 수 있고, 식각처리 매수가 많기 때문에 식각 공정의 생산성을 크게 향상시킨다. 또한, 식각속도가 빠르고, 하부막 및 장비에 대한 손상이 없으며, 패턴/비패턴 간의 균일한 에칭이 가능하여 우수한 식각 특성을 제공하며, 고가의 장비구성이 필요하지 않고 대면적화에 유리하여 매우 경제적인 이점을 제공한다.
PCT/KR2010/004782 2009-07-22 2010-07-21 금속 배선 형성을 위한 식각액 조성물 WO2011010872A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201080033704.9A CN102471898B (zh) 2009-07-22 2010-07-21 用于形成金属线的蚀刻组合物

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2009-0066921 2009-07-22
KR1020090066921A KR101602499B1 (ko) 2009-07-22 2009-07-22 금속 배선 형성을 위한 식각액 조성물
KR1020090077208A KR101754417B1 (ko) 2009-08-20 2009-08-20 금속 배선 형성을 위한 식각액 조성물
KR10-2009-0077208 2009-08-20

Publications (2)

Publication Number Publication Date
WO2011010872A2 WO2011010872A2 (ko) 2011-01-27
WO2011010872A3 true WO2011010872A3 (ko) 2011-04-21

Family

ID=43499545

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/004782 WO2011010872A2 (ko) 2009-07-22 2010-07-21 금속 배선 형성을 위한 식각액 조성물

Country Status (2)

Country Link
CN (1) CN102471898B (ko)
WO (1) WO2011010872A2 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140086669A (ko) * 2012-12-28 2014-07-08 동우 화인켐 주식회사 금속 산화물막의 식각액 조성물
CN103668209B (zh) * 2013-12-07 2016-01-20 江阴江化微电子材料股份有限公司 钛-铝-钛金属层叠膜用蚀刻液组合物
CN104498950B (zh) * 2014-12-02 2018-01-02 江阴润玛电子材料股份有限公司 一种高选择性钛层腐蚀液组合物
KR20180060489A (ko) 2016-11-29 2018-06-07 삼성전자주식회사 식각용 조성물 및 이를 이용한 반도체 장치 제조 방법
JP6893562B2 (ja) * 2017-01-17 2021-06-23 インテグリス・インコーポレーテッド 進歩したノードｂｅｏｌ処理のためのエッチング後残留物除去
CN109554711A (zh) * 2019-01-31 2019-04-02 武汉华星光电半导体显示技术有限公司 蚀刻液组合物
CN109852970A (zh) * 2019-02-18 2019-06-07 湖北兴福电子材料有限公司 一种双氧化组分铝蚀刻液
CN110344062B (zh) * 2019-08-19 2022-03-25 江阴江化微电子材料股份有限公司 一种栅极钛铝钛层叠金属膜用蚀刻液

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007067367A (ja) * 2005-02-24 2007-03-15 Kanto Chem Co Inc チタン、アルミニウム金属積層膜エッチング液組成物
JP2008053374A (ja) * 2006-08-23 2008-03-06 Kanto Chem Co Inc チタン、アルミニウム金属積層膜エッチング液組成物
KR20080051249A (ko) * 2006-12-05 2008-06-11 동우 화인켐 주식회사 티타늄 또는 티타늄 합금막, 및 알루미늄 또는 알루미늄합금막을 포함하는 다층막 식각액 조성물
KR100839428B1 (ko) * 2007-05-17 2008-06-19 삼성에스디아이 주식회사 식각액, 및 이를 이용한 박막트랜지스터를 갖는 기판의제조 방법

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* Cited by examiner, † Cited by third party
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KR20030079740A (ko) * 2002-04-02 2003-10-10 동우 화인켐 주식회사 알루미늄(또는 알루미늄 합금)층을 함유한 다층막 및단일막 식각액 조성물
KR100440343B1 (ko) * 2002-04-03 2004-07-15 동우 화인켐 주식회사 고 선택성 은 식각용액-1
CN100537847C (zh) * 2005-02-24 2009-09-09 关东化学株式会社 钛、铝金属层叠膜蚀刻液组合物

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007067367A (ja) * 2005-02-24 2007-03-15 Kanto Chem Co Inc チタン、アルミニウム金属積層膜エッチング液組成物
JP2008053374A (ja) * 2006-08-23 2008-03-06 Kanto Chem Co Inc チタン、アルミニウム金属積層膜エッチング液組成物
KR20080051249A (ko) * 2006-12-05 2008-06-11 동우 화인켐 주식회사 티타늄 또는 티타늄 합금막, 및 알루미늄 또는 알루미늄합금막을 포함하는 다층막 식각액 조성물
KR100839428B1 (ko) * 2007-05-17 2008-06-19 삼성에스디아이 주식회사 식각액, 및 이를 이용한 박막트랜지스터를 갖는 기판의제조 방법

Also Published As

Publication number Publication date
CN102471898B (zh) 2014-11-05
CN102471898A (zh) 2012-05-23
WO2011010872A2 (ko) 2011-01-27

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