WO2012177017A3 - 금속 배선 식각액 및 이를 이용한 액정 표시 장치의 제조 방법 - Google Patents

금속 배선 식각액 및 이를 이용한 액정 표시 장치의 제조 방법 Download PDF

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Publication number
WO2012177017A3
WO2012177017A3 PCT/KR2012/004717 KR2012004717W WO2012177017A3 WO 2012177017 A3 WO2012177017 A3 WO 2012177017A3 KR 2012004717 W KR2012004717 W KR 2012004717W WO 2012177017 A3 WO2012177017 A3 WO 2012177017A3
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WIPO (PCT)
Prior art keywords
etchant
etching
liquid composition
metal film
etchant liquid
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PCT/KR2012/004717
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English (en)
French (fr)
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WO2012177017A2 (ko
Inventor
구병수
이명한
조삼영
이기범
Original Assignee
㈜동진쎄미켐
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Application filed by ㈜동진쎄미켐 filed Critical ㈜동진쎄미켐
Priority to CN201280030638.9A priority Critical patent/CN103635608A/zh
Publication of WO2012177017A2 publication Critical patent/WO2012177017A2/ko
Publication of WO2012177017A3 publication Critical patent/WO2012177017A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/10—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a boron compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

반도체 장치에 사용되는 구리를 포함한 금속막 식각액 조성물 및 이를 사용한 식각 방법을 개시한다. 본 발명의 금속막 식각액 조성물은 불화붕소산 또는 불화붕소산과 적어도 한 종류의 함불소 화합물을 포함한다. 본 발명에 따른 식각액 조성물을 이용한 구리를 포함한 금속막의 식각 방법은 식각시에 하부의 유리 기판을 손상시키지 않을 뿐 아니라, 구리 함유 다층 금속막도 일괄적으로 식각할 수 있어 반도체 장치의 생산 수율을 향상시킬 수 있다. 본 발명의 식각액 조성물과 이를 이용한 식각 방법은 황산염을 사용하지 않아 단차 및 침식에 의한 단선(Data Open)불량을 방지 할 수 있으며, 또한 유기산을 사용하지 않고 식각이 가능하기 때문에 금속염과의 석출 문제를 해결할 수 있고 패턴의 미세화도 기할 수 있는 장점이 있다.
PCT/KR2012/004717 2011-06-21 2012-06-15 금속 배선 식각액 및 이를 이용한 액정 표시 장치의 제조 방법 WO2012177017A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201280030638.9A CN103635608A (zh) 2011-06-21 2012-06-15 金属配线蚀刻液及利用其的液晶显示装置的制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110060238A KR101770754B1 (ko) 2011-06-21 2011-06-21 금속 배선 식각액 및 이를 이용한 액정 표시 장치의 제조 방법
KR10-2011-0060238 2011-06-21

Publications (2)

Publication Number Publication Date
WO2012177017A2 WO2012177017A2 (ko) 2012-12-27
WO2012177017A3 true WO2012177017A3 (ko) 2013-02-28

Family

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PCT/KR2012/004717 WO2012177017A2 (ko) 2011-06-21 2012-06-15 금속 배선 식각액 및 이를 이용한 액정 표시 장치의 제조 방법

Country Status (4)

Country Link
KR (1) KR101770754B1 (ko)
CN (1) CN103635608A (ko)
TW (1) TW201313879A (ko)
WO (1) WO2012177017A2 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102092350B1 (ko) * 2013-10-18 2020-03-24 동우 화인켐 주식회사 액정표시장치용 어레이 기판의 제조방법
KR102160286B1 (ko) * 2013-11-04 2020-09-28 동우 화인켐 주식회사 액정표시장치용 어레이 기판의 제조방법
KR102178949B1 (ko) 2013-11-21 2020-11-16 삼성디스플레이 주식회사 식각액 및 이를 이용한 표시 장치의 제조방법
CN103668209B (zh) * 2013-12-07 2016-01-20 江阴江化微电子材料股份有限公司 钛-铝-钛金属层叠膜用蚀刻液组合物
KR102368376B1 (ko) * 2015-09-22 2022-02-28 동우 화인켐 주식회사 금속막의 식각액 조성물 및 이를 이용한 액정표시장치용 어레이 기판의 제조방법
KR102479444B1 (ko) * 2015-12-30 2022-12-21 삼영순화(주) 식각액 조성물 및 이를 이용한 반도체 장치의 제조 방법
KR102007428B1 (ko) 2017-03-09 2019-08-05 코닝 인코포레이티드 글라스 지지체에 의하여 지지되는 금속 박막의 제조방법
WO2018164535A1 (ko) * 2017-03-09 2018-09-13 코닝 인코포레이티드 글라스 지지체에 의하여 지지되는 금속 박막의 제조방법
CN114774922B (zh) * 2022-04-01 2022-11-15 肇庆微纳芯材料科技有限公司 一种钼铝金属蚀刻液及其制备方法与蚀刻方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040051502A (ko) * 2002-12-12 2004-06-18 엘지.필립스 엘시디 주식회사 구리 몰리브덴막에서 몰리브덴 잔사를 제거할 수 있는식각용액 및 그 식각 방법
KR20060024775A (ko) * 2003-05-12 2006-03-17 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 제2단계 구리 라이너 및 관련된 물질을 위한 ｃｍｐ조성물및 그 이용방법
KR20080045853A (ko) * 2006-11-21 2008-05-26 동우 화인켐 주식회사 액정표시장치용 ｔｆｔ 어레이 기판의 제조방법
KR20100123131A (ko) * 2009-05-14 2010-11-24 삼성전자주식회사 식각액 조성물 및 이를 이용한 어레이 기판의 제조방법
KR20110063055A (ko) * 2009-12-04 2011-06-10 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040051502A (ko) * 2002-12-12 2004-06-18 엘지.필립스 엘시디 주식회사 구리 몰리브덴막에서 몰리브덴 잔사를 제거할 수 있는식각용액 및 그 식각 방법
KR20060024775A (ko) * 2003-05-12 2006-03-17 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 제2단계 구리 라이너 및 관련된 물질을 위한 ｃｍｐ조성물및 그 이용방법
KR20080045853A (ko) * 2006-11-21 2008-05-26 동우 화인켐 주식회사 액정표시장치용 ｔｆｔ 어레이 기판의 제조방법
KR20100123131A (ko) * 2009-05-14 2010-11-24 삼성전자주식회사 식각액 조성물 및 이를 이용한 어레이 기판의 제조방법
KR20110063055A (ko) * 2009-12-04 2011-06-10 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법

Also Published As

Publication number Publication date
KR101770754B1 (ko) 2017-08-24
WO2012177017A2 (ko) 2012-12-27
TW201313879A (zh) 2013-04-01
CN103635608A (zh) 2014-03-12
KR20120140481A (ko) 2012-12-31

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