WO2011007433A1 - 撮像装置 - Google Patents
撮像装置 Download PDFInfo
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- WO2011007433A1 WO2011007433A1 PCT/JP2009/062825 JP2009062825W WO2011007433A1 WO 2011007433 A1 WO2011007433 A1 WO 2011007433A1 JP 2009062825 W JP2009062825 W JP 2009062825W WO 2011007433 A1 WO2011007433 A1 WO 2011007433A1
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- electron emission
- emission source
- magnet
- magnets
- optical axis
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/26—Image pick-up tubes having an input of visible light and electric output
- H01J31/28—Image pick-up tubes having an input of visible light and electric output with electron ray scanning the image screen
- H01J31/34—Image pick-up tubes having an input of visible light and electric output with electron ray scanning the image screen having regulation of screen potential at cathode potential, e.g. orthicon
- H01J31/38—Tubes with photoconductive screen, e.g. vidicon
Definitions
- the present invention relates to a photoconductive type imaging device having an electron emission source array in which a plurality of electron emission sources are arranged in a plane and a photoelectric conversion film arranged to face the electron emission source array.
- the present invention relates to an imaging device using a structure.
- An electron emission source array in which a plurality of minute electron emission sources that draw electrons by applying an electric field is arranged in a matrix on a substrate plane is known as a cold cathode.
- Each of these electron emission sources can be driven at a low voltage, has a simple structure, and is being studied for application to a small imaging device using an electron emission source array.
- Patent Document 1 proposes an imaging device in which a disk-shaped permanent magnet is arranged on the back side of the imaging element, facing the imaging element, in addition to the cylindrical magnet surrounding the imaging element.
- a cylindrical magnet with a large cylinder length and cylinder diameter is used to form a magnetic field in a direction parallel to the electron emission direction in the area of the effective photoelectric conversion film that receives light. is required.
- the inventor repeated experiments to reduce the size of the imaging device, and as a result, the magnetic field strength became non-uniform when the inner diameter of the cylindrical magnet of the magnetic field focusing structure arranged around the conventional imaging device was reduced, It has been found that such downsizing is difficult.
- FIG. 1 shows the execution result (strength) of the magnetic field distribution simulation when the cylindrical magnet 511 around the image sensor 821 and the disk magnet 521 on the back surface of the image sensor are used.
- the magnetic lines of force within the dotted line where the image sensor is arranged are not perpendicular to the electron emission source array but are distorted.
- the lines of magnetic force (arrows) in the region of the image sensor 821 indicated by the dotted line in the center of the figure are deviated from the vertical direction of the photoelectric conversion film.
- the present invention makes the magnetic field distribution uniform in the imaging device having the magnetic field focusing structure, and solves the problem that a uniform magnetic field cannot be obtained unless the inner diameter of the magnet is increased.
- An example is to provide an imaging device that contributes to the realization of the system.
- An image pickup apparatus is arranged to be opposed to the electron emission source array with a space on the optical axis and an electron emission source array in which a plurality of electron emission sources are arranged in a plane perpendicular to the optical axis.
- An imaging device that outputs an electrical signal corresponding to the optical image projected on A magnet portion that forms a magnetic field in a direction orthogonal to each of the main surfaces of the translucent substrate and the electron emission source array in the space;
- the magnet section is composed of a plurality of magnets arranged in parallel to the optical axis so that the magnetic poles are forward in a direction parallel to the optical axis and do not contact each other.
- the plurality of magnets of the magnet unit each define a cavity along the axis of symmetry, and the translucent substrate and the electron emission source array are accommodated in the center of the cavity. It may be a plurality of cylindrical permanent magnets arranged coaxially on the optical axis.
- a gap or a non-magnetic material may be provided between adjacent magnets in the plurality of magnets of the magnet unit.
- the gap or the non-magnetic material may be provided on the light incident side with respect to the photoelectric conversion film.
- the plurality of magnets of the magnet unit may be magnets having different coercive forces.
- the plurality of magnets of the magnet unit may be magnets having different inner diameters.
- the plurality of magnets of the magnet unit may be magnets having different outer diameters.
- the plurality of magnets of the magnet unit may be magnets having different magnet thicknesses.
- the second magnet unit includes the second magnet unit, and the second magnet unit is opposite to the light incident side on the optical axis so that the symmetry axis is coaxial with the optical axis.
- the disk-shaped second permanent magnet is disposed at a distance from the electron emission source array and faces the electron emission source array.
- the second permanent magnet may have an opening that is coaxial with the optical axis.
- an electron emission source array in which a photoelectric conversion film and a plurality of electron emission sources are arranged in an array, a magnet arranged around an imaging device for focusing an emitted electron beam of the electron emission source array, and imaging
- the image pickup device composed of magnets arranged at the rear of the device, a plurality of magnets for focusing the electron beam arranged around the image pickup device are formed.
- FIG. 2 is a block diagram illustrating a configuration of an electron emission source array chip including an electron emission source array and a circuit that drives the electron emission source array in the imaging device of the embodiment of the present invention, and a controller that controls the entire apparatus.
- Electron emission part 5b Second magnet part 10 Imaging element 11 Photoelectric conversion film 12 Translucent conductive film 13 Translucent substrate 15 Mesh electrode 20 Electron emission source array 22 Y scan driver 23 X scan driver 24 Electron emission source Array chip 25 Support 26 Controller 30 Element substrate 31 Electron emission source 33 Lower electrode 34 Electron supply layer 35 Insulator layer 36 Upper electrode 36a Bridge part 37 Carbon layer 77 Element isolation film 74 Gate insulating film 75 Gate electrode 72 Source electrode 76 Drain electrode 70 Interlayer insulating film 71 Contact hole 80 Expanded opening space 91 Electron emission part
- This imaging device includes an electron emission source array 20 in which a plurality of electron emission sources are arranged on a plane (XY plane) perpendicular to the optical axis (Z direction), and an electron emission source array 20 with a space on the optical axis.
- a light-transmitting substrate 13 having a photoelectric conversion film 11 disposed so as to be opposed to each other, scanning an electron emission source dot-sequentially to emit electrons to the photoelectric conversion film 11, and light from the light-transmitting substrate 13 This is output as an electrical signal corresponding to the optical image projected on the photoelectric conversion film 11 upon incidence.
- FIG. 3 is a cross-sectional view of the cylindrical image sensor 10.
- FIG. 4 is a block diagram showing a configuration of an electron emission source array 20 of the image pickup device 10, an electron emission source array chip 24 including a Y scan driver 22 and an X scan driver 23 for driving the same, and a controller 26 for controlling the entire device. It is.
- FIG. 5 is an enlarged partial sectional view schematically showing an enlarged portion of the electron emission source 31 of the electron emission source array chip formed on the silicon element substrate 30 in order to describe the active drive type electron emission source array. is there.
- the photoelectric conversion film 11 facing the internal space of the vacuum 4 is formed on a light-transmitting conductive film 12, and the light-transmitting conductive film 12 is formed on a light-transmitting substrate 13 such as glass. Pre-formed.
- the photoelectric conversion film 11 is a light receiving unit that receives light from an object to be photographed, and is composed mainly of amorphous selenium (Se), but other materials such as silicon (Si), lead oxide, and the like.
- Compound semiconductors such as (PbO), cadmium selenide (CdSe), and gallium arsenide (GaAs) can also be used.
- the translucent conductive film 12 can be formed of tin oxide (SnO 2 ), ITO (indium tin oxide), Se—As—Te, or the like. As will be described later, a predetermined positive voltage is applied to the translucent conductive film 12 via a connection terminal T ⁇ b> 1 provided on the translucent substrate 13.
- substrate 13 should just be formed with the material which permeate
- transmits the light of the wavelength which the image pick-up element 10 images For example, in the case of imaging with visible light, it is made of a material such as glass that transmits visible light, and in the case of imaging with ultraviolet light, it is formed of a material such as sapphire or quartz glass that transmits ultraviolet light.
- it may be made of a material that transmits X-rays, such as beryllium (Be), silicon (Si), boron nitride (BN), aluminum oxide (Al 2 O 3 ), or the like. That's fine.
- a hole injection blocking layer such as CeO 2 for blocking hole injection from the light transmitting conductive film 12 to the photoelectric conversion film 11 is provided on the light transmitting conductive film 12 side of the photoelectric conversion film 11,
- An electron injection element layer such as Sb 2 S 3 for preventing electron injection into the photoelectric conversion film 11 can be provided on the vacuum space side.
- the mesh electrode 15 in the vacuum space is provided with a plurality of through openings and is formed of a known metal material, alloy, semiconductor material, or the like. A predetermined positive voltage is applied to the mesh electrode 15 via a connection terminal (not shown).
- the mesh electrode is an intermediate electrode provided for electron acceleration and surplus electron recovery. Thereby, the directivity of the electron beam can be improved and the resolution can be improved.
- the electron emission source array chip 24 will be described in detail later.
- the gate electrode of a MOS (Metal Oxide Semiconductor) transistor that drives the electron emission source is connected to an X scan driver (horizontal scan circuit), and the source electrode is a Y scan driver. 22 (vertical scanning circuit), and dot sequential scanning is performed.
- the Y scan driver and the X scan driver are configured as one chip integrally with the electron emission source array on the electron emission source array chip 24, and are provided on the support 25 in the glass housing 10A. Signals and voltages necessary for driving the electron emission source array chip 24 are supplied through connection terminals (not shown) provided in the glass housing 10A.
- the electron emission source array chip 24 and the translucent substrate 13 are arranged substantially in parallel with the vacuum space 4 interposed therebetween, and are vacuum-sealed in the translucent substrate 13 and the glass housing 10A sealed with frit glass or indium metal. ing.
- a plurality of electron emission sources 31 are arranged in a matrix on the substrate plane (XY plane) to constitute an electron emission source array 20.
- An electron emission source array chip 24 including an electron emission source array 20 and a Y scan driver 22 and an X scan driver 23 for driving the array 20 is configured as one chip.
- the controller 26 and other circuits described later may be provided on the chip.
- the electron emission source array 20 formed on the upper surface of the chip is an active drive type field emission array (FEA: Field Emitter Array) in which the electron emission source array is directly laminated on the drive circuit LSI formed on the Si wafer. It is possible to cope with high-speed driving (for example, the drive pulse width of one electron emission source 31 is several tens of ns) of the imaging operation in which dot sequential scanning is performed.
- the electron emission source array 20 includes n rows and m columns (pixels) connected to scanning lines (hereinafter referred to as scanning lines) of n lines and m lines in the Y direction (vertical direction) and the X direction (horizontal direction), respectively.
- the number is composed of a plurality of electron emission sources 31 in a matrix arrangement of n ⁇ m).
- the number of electron emission sources 31 of the electron emission source array 20 is 1920 ⁇ 1080, for example, and the size of one electron emission source 31 is 20 ⁇ 20 ⁇ m 2 .
- An electron emission portion 91 that is an opening for electron emission is provided on the surface portion of the one-electron emission source 31.
- 3 ⁇ 3 electron emission portions 91 (1 ⁇ m ⁇ ) having an electron emission source diameter of about 1 ⁇ m are formed in an 8 ⁇ 8 ⁇ m 2 region of one electron emission source 31.
- an electron current of several microamperes ( ⁇ A) is emitted from one electron emission portion 91 (emission current density is about 4 A / cm 2 ).
- ⁇ A microamperes
- the Y scanning driver 22 and the X scanning driver 23 perform dot sequential scanning and electron emission based on control signals such as a vertical synchronization signal (V-Sync), a horizontal synchronization signal (H-Sync), and a clock signal (CLK) from the controller 26.
- FIG. 5 is a diagram for explaining an electron emission source 31 in an actively driven electron emission source array and a MOS transistor for switching the electron emission source 31.
- the portion of the electron emission source 31 of the electron emission source array chip 24 (FIG. 4) is shown. It has expanded.
- the electron emission source 31 of the electron emission source array formed on the silicon element substrate 30 is formed by forming a drive circuit composed of a MOS transistor array and a Y scan driver and an X scan driver for controlling the drive circuit on the element substrate 30, It is formed on the top.
- the upper electrode 36 is connected to, for example, a Y scanning driver, and a predetermined signal is applied to each.
- the lower electrode 33 is connected to, for example, an X scanning driver, and a predetermined signal is applied to each of them in synchronization with the vertical scanning pulse. Since the intersection of the lower electrode 33 and the upper electrode 36 corresponds to the arrangement of the electron emission portions 91, in the imaging device of the embodiment, the electron emission portions 91 are sequentially driven by the lower electrode and the upper electrode 36 and approached by emitted electrons. The photoelectric conversion film region is scanned to obtain a video signal photoelectrically converted from an image formed on the photoelectric conversion film.
- the electron emission source 31 includes a lower electrode 33, an electron supply layer 34, an insulator layer 35, for example, an upper electrode 36 made of tungsten (W), and a MIS (Metal Insulator) having a laminated structure of a carbon layer 37.
- Semiconductor) type electron emission source The upper electrode 36 of the electron emission source array 20 is common to each line, and the lower electrode 33 and the electron supply layer 34 are divided to electrically separate the electron emission sources 31.
- a concave portion 91 that penetrates the insulator layer 35 and the upper electrode 36 to the electron supply layer 34 is an electron emission portion.
- an element isolation film 77 is formed in the silicon element substrate 30, and a gate insulating film 74 and a gate made of polysilicon are formed on the silicon element substrate 30 between the element isolation films 77.
- An electrode 75 is formed.
- the source electrode 72 and the drain electrode 76 are formed in a self-aligned manner by introducing impurities into the silicon element substrate 30 and activating them using the gate electrode 75 and the element isolation film 77 as a mask.
- the lower electrode 33 is electrically connected to the drain electrode 76 through a metal such as tungsten in the contact hole 71 penetrating the interlayer insulating film 70. For each lower electrode 33, an electron emission source 31 is formed separately and independently.
- An electron supply layer 34, an insulator layer 35, and an upper electrode 36 are sequentially stacked on the lower electrode 33, and an electron emission portion 91 is formed as a recess and is covered with the carbon layer 37.
- the electron emission sources 31 are separated by an enlarged opening space 80 removed by etching the electron supply layer 34.
- the electron supply layer 34 is separated and independent for each electron emission source 31 similarly to the lower electrode 33, but the bridge portion 36 a of the upper electrode 36 is installed in the space and electrically connects the adjacent electron emission sources 31. is doing.
- a carbon layer 37 is formed on the upper electrode 36 of the electron emission portion 91.
- the imaging device 10 shown in FIG. 3 when light from the outside enters the photoelectric conversion film 11 through the translucent substrate 13 and the translucent conductive film 12, the amount of incident light is increased inside the film near the translucent conductive film 12. Corresponding electron / hole pairs are generated. Of these, holes are accelerated by a strong electric field applied to the photoelectric conversion film 11 through the translucent conductive film 12 and collide with atoms constituting the photoelectric conversion film 11 one after another to generate new electron / hole pairs. . As described above, the avalanche-multiplied holes are accumulated on the side of the photoelectric conversion film 11 facing the electron emission source array 20 (the side opposite to the light-transmitting conductive film 12), and the hole pattern corresponding to the incident light image. Is formed. A current when the hole pattern and the electrons emitted from the electron emission source array 20 are combined is detected from the translucent conductive film 12 as a video signal corresponding to the incident light image.
- FIG. 6 is a cross-sectional view schematically showing the configuration of the imaging element 10 and its surroundings in the imaging apparatus.
- FIG. 7 is a partially cutaway perspective view schematically showing the configuration of the imaging element 10 and its surroundings in the imaging apparatus.
- the imaging device includes a cylindrical magnet portion 5 surrounding the periphery of the imaging element 10 on the optical axis.
- the cylindrical magnet portion 5 surrounding the image sensor is composed of a plurality of magnets (light incident side magnet ring M1 and substrate side magnet ring M2) which are annular permanent magnets, and magnetic lines of force are oriented parallel to the optical axis. Is arranged.
- the light incident side magnet ring M1 and the substrate side magnet ring M2 are arranged so as to have polarity in the same direction.
- a buffer B1 is provided between the magnet rings M1 and M2.
- the buffer B1 is a nonmagnetic material such as aluminum, brass, or resin, or a gap. As long as the buffering portion B1 is a nonmagnetic material, it may be a member for fixing the light incident side magnet ring M1 and the substrate side magnet ring M2.
- a second magnet part 5b that is annular and has a buffer part B2 is provided on the back side of the image sensor so as to have a polarity opposite to that of the magnet part 5.
- the second buffer B2 is merely a through opening, but may be a nonmagnetic material such as aluminum, brass, or resin filled in the opening.
- the second magnet portion 5b is arranged on the opposite side of the light incident side on the optical axis with a space from the electron emission source array 20 so that the symmetry axis is coaxial with the optical axis, and the electron emission source.
- a disk-shaped second permanent magnet facing the array 20 can be used.
- FIG. 8 shows the magnetic field distribution in the embodiment using the cylindrical magnet portion 5 having the aluminum buffer portion B1 between the two magnet rings and the second disk magnet portion 5b having the opening on the back surface of the imaging element 10.
- the simulation execution result (strength) is shown.
- the magnetic field strength within the dotted line in which the imaging element 10 is arranged on the back side when viewed from the incident side of the aluminum buffer B1 of the cylindrical magnet unit 5 is more uniform than the conventional one shown in FIG. I know that there is.
- FIG. 9 shows lines of magnetic force around the image sensor in the imaging apparatus of the embodiment shown in FIG.
- the magnet part 5 having the buffer part B1 is provided in the space between the photoelectric conversion film 11 and the electron emission source array 20, respectively, on the main surfaces of the translucent substrate 13 and the electron emission source array 20. It can be seen that a magnetic field in a direction perpendicular to the magnetic field is formed, that is, the magnetic lines of force are oriented in the optical axis direction. 6 to 9, the buffer B1, that is, the gap or the nonmagnetic material is provided on the light incident side on the optical axis with respect to the photoelectric conversion film 11, so that the lines of magnetic force are aligned in the optical axis direction. I understand that.
- the preferable dimension range of the member of the imaging apparatus of the embodiment for obtaining the same distribution as in FIG. 8 is that the inner diameter (radius) R1 of the cylindrical magnet portion 5 is 10 to 35 mm.
- the ring outer diameter (radius) R2 is 20 to 40 mm, the ring length L of the cylindrical magnet part 5 is 15 to 25 mm, the ring thickness T of the cylindrical magnet part 5 is 5 to 10 mm, and the ring position of the buffer part B1 is the ring length. 1/2, the imaging element position (position of the photoelectric conversion film 11) P is 10 to 20 mm from the ring incident end face of the cylindrical magnet portion 5.
- the size of the image sensor is 1 ⁇ 2 inch optical (6.4 mm ⁇ 4.8 mm) to 1 inch optical (12.7 mm ⁇ 9.525 mm), and the coercive force of the magnet portion is 500 to 1500 kA / m.
- the number of inches of the image sensor size indicates the diagonal length (broken line) of the rectangular effective light receiving surface of the photoelectric conversion film 11 as shown in FIG.
- the inner diameter of the magnet portion 5 of this embodiment is reduced by 56/90 and the length in the optical axis direction is reduced by 340/488 compared to the conventional magnet (FIG. 1), and the entire apparatus is achieved. Can be made smaller.
- a space having a magnetic field line perpendicular to the electron emission source array 20 is formed by the plurality of magnet rings M, so that the electron beam emitted from the electron emission source array 20 with a spread is Lorentz. It reaches the photoelectric conversion film 11 while drawing a spiral so as to wrap around the magnetic field lines by force.
- the diameter of the electron beam reaching the photoelectric conversion film 11 is controlled by applying a voltage to the mesh electrode 15 disposed between the photoelectric conversion film 11 and the electron emission source array 20 and adjusting the electron velocity. Is possible.
- a plurality of focusing points can be formed by the voltage of the mesh electrode 15.
- the image sensor 10 is arranged to reduce the magnetic force near the middle between the two magnet rings, improve the uniformity of the horizontal magnetic field, and provide a hole (buffer part B2) in the center of the second magnet part 5b.
- the magnetic field lines in the vicinity of the image sensor 10 are made parallel to the vertical direction of the electron emission source array.
- each magnetic pole of the several magnet M may become a forward direction in the direction parallel to an optical axis, and may not contact.
- the plurality of magnets M of the magnet unit 5 each define a cavity along the axis of symmetry, and are coaxially aligned on the optical axis that houses the translucent substrate and the electron emission source array in the center of the cavity. It is.
- the magnetic field lines to be diffused are guided to the center of the cavity without in-plane variation of the electron beam from the electron emission source 31, and in the vicinity of the imaging device 10 disposed near the center. It is possible to make the magnetic field uniform and focus the magnetic field lines so as to be perpendicular to the electron emission source array 20.
- the magnet unit 5 has two magnet rings aligned with magnetic poles.
- the magnet unit 5 can also be configured by stacking seven magnet rings M with aligned magnetic poles. The same effect can be obtained if a large number of magnet rings have their magnetic poles in the forward direction parallel to the optical axis. A similar effect can also be obtained by alternately laminating a plurality of ring-shaped magnets M and non-magnetic materials B.
- a plurality of, for example, seven magnet rings M (for example, each having a thickness of 2 mm in the optical axis direction) of the magnet unit 5 are combined with a buffer unit B (optical axis).
- the magnet unit 5 includes, for example, seven magnet rings M (for example, each having a thickness of 2 mm in the optical axis direction) and seven buffer units B (in the optical axis direction).
- the imaging device of another embodiment a similar effect can be obtained by using a plurality of cylindrical magnet rings as a single structure and changing the inner and outer diameters as coaxial. . That is, the magnet portion 5 can be formed in accordance with the shape of the electron emission source array.
- the plurality of magnet rings of the magnet unit 5 may be magnets having different coercive forces.
- the cylindrical magnet portion 5 around the image sensor 10 is not limited to a cylindrical shape or a disk, but can be a rectangular or square rectangular cross-sectional shape in accordance with the imaging area of the image sensor 10. If the opening is also rectangular, the same effect as in the above embodiment can be obtained.
- the imaging apparatus includes a magnetic shielding mechanism for reducing the leakage magnetic field around the imaging apparatus.
- the electron emission source array is described as a matrix arrangement of a plurality of electron emission portions in which a carbon layer is coated in a recess that penetrates the insulator layer and the upper electrode to the electron supply layer.
- the present invention is not limited to this, and can be applied to an imaging apparatus using another planar type electron emission source array such as a so-called Spindt type electron emission source matrix array.
- the magnetic flux uniformity improving structure of the electron traveling portion of the electron emission source array in the present invention can be applied as a flat display device or a drawing apparatus.
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Abstract
Description
前記空間において前記透光性基板及び電子放出源アレイの主面それぞれに直交する方向の磁界を形成する磁石部を有し、
前記磁石部は、それぞれの磁極が前記光軸に平行な方向に順方向となりかつ、それぞれが接触しないように、前記光軸に平行に配置された複数の磁石からなることを特徴とする。
本発明により、撮像素子内での磁界分布を均一化させたことより、従来では磁石の内径を大きくしなければ均一磁界を得ることができなかった問題を解決し、電子放出源アレイを用いた撮像装置の小型化を達成できる。
5 磁石部
5b 第2の磁石部
10 撮像素子
11 光電変換膜
12 透光性導電膜
13 透光性基板
15 メッシュ電極
20 電子放出源アレイ
22 Y走査ドライバ
23 X走査ドライバ
24 電子放出源アレイチップ
25 サポート
26 コントローラ
30 素子基板
31 電子放出源
33 下部電極
34 電子供給層
35 絶縁体層
36 上部電極
36a ブリッジ部
37 炭素層
77 素子分離膜
74 ゲート絶縁膜
75 ゲート電極
72 ソース電極
76 ドレイン電極
70 層間絶縁膜
71 コンタクトホール
80 拡大開口空間
91 電子放出部
図3、図4及び図5を参照して、撮像装置の撮像素子の一例を説明する。この撮像素子は、光軸(Z方向)に垂直な平面(XY平面)に複数の電子放出源が配列された電子放出源アレイ20と、光軸上に空間を隔てて電子放出源アレイ20に対向して配置された光電変換膜11を有する透光性基板13と、を含み、電子放出源を点順次走査して電子を光電変換膜11へ放出して、透光性基板13からの光入射により光電変換膜11上に投影された光学像に対応した電気信号として出力するものである。
次に、撮像装置の動作について説明する。
上記実施形態では、磁石部5を2つの磁石環を磁極を揃え重ねたが、図10に示すように、さらに例えば7つの磁石環Mを磁極を揃え重ねて磁石部5を構成することもでき、多くの磁石環がそれぞれの磁極が光軸に平行な方向に順方向となるようにすれば、同様の効果が得られる。複数のリング状磁石Mと非磁性体Bを交互に積層することでも、同様な効果を得ることができるのである。
Claims (10)
- 光軸に垂直な平面に複数の電子放出源が配列された電子放出源アレイと、前記光軸上に空間を隔てて前記電子放出源アレイに対向して配置された光電変換膜を有する透光性基板と、を含み、前記電子放出源を点順次走査して電子を前記光電変換膜へ放出して、前記透光性基板からの光入射により前記光電変換膜上に投影された光学像に対応した電気信号として出力する撮像装置であって、
前記空間において前記透光性基板及び電子放出源アレイの主面それぞれに直交する方向の磁界を形成する磁石部を有し、
前記磁石部は、それぞれの磁極が前記光軸に平行な方向に順方向となりかつ、それぞれが接触しないように、前記光軸に平行に配置された複数の磁石からなることを特徴とする撮像装置。 - 前記磁石部の前記複数の磁石は、各々がその対称軸に沿った空洞を画定し、前記透光性基板及び前記電子放出源アレイを前記空洞内の中央に収納する前記光軸上に同軸に整列された筒型の複数の永久磁石であることを特徴とする請求項1記載の撮像装置。
- 前記磁石部の前記複数の磁石において、互いに隣り合う同士の間に間隙又は非磁性体が設けられていることを特徴とする請求項2記載の撮像装置。
- 前記間隙又は非磁性体は前記光電変換膜よりも前記光入射側に設けられていることを特徴とする請求項3記載の撮像装置。
- 前記磁石部の前記複数の磁石は、保磁力がそれぞれ異なる磁石であることを特徴とする請求項2~4のいずれか1記載の撮像装置。
- 前記磁石部の前記複数の磁石は、磁石の内径がそれぞれ異なる磁石であることを特徴とする請求項2~4のいずれか1記載の撮像装置。
- 前記磁石部の前記複数の磁石は、磁石の外径がそれぞれ異なる磁石であることを特徴とする請求項2~4のいずれか1記載の撮像装置。
- 前記磁石部の前記複数の磁石は、磁石の厚さがそれぞれ異なる磁石であることを特徴とする請求項2~4のいずれか1記載の撮像装置。
- 第2の磁石部を有し、前記第2の磁石部は、その対称軸が前記光軸上に同軸となるように、前記光軸上の光入射側の反対側に前記電子放出源アレイから空間を隔てて配置されかつ、前記電子放出源アレイと対向する円盤形の第2の永久磁石であることを特徴とする請求項1~8のいずれか1記載の撮像装置。
- 前記第2の永久磁石は前記光軸上に同軸となる開口を有することを特徴とする請求項9記載の撮像装置。
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US13/383,052 US20120153129A1 (en) | 2009-07-15 | 2009-07-15 | Imaging apparatus |
PCT/JP2009/062825 WO2011007433A1 (ja) | 2009-07-15 | 2009-07-15 | 撮像装置 |
JP2011522658A JP5221761B2 (ja) | 2009-07-15 | 2009-07-15 | 撮像装置 |
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PCT/JP2009/062825 WO2011007433A1 (ja) | 2009-07-15 | 2009-07-15 | 撮像装置 |
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JP (1) | JP5221761B2 (ja) |
WO (1) | WO2011007433A1 (ja) |
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WO2011007431A1 (ja) * | 2009-07-15 | 2011-01-20 | パイオニア株式会社 | 撮像装置 |
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JPS588851U (ja) * | 1981-07-10 | 1983-01-20 | 株式会社東芝 | 陰極線管用集束磁界装置 |
JP2005322581A (ja) * | 2004-05-11 | 2005-11-17 | Nippon Hoso Kyokai <Nhk> | 撮像素子及びそれを用いた撮像装置 |
JP2006134804A (ja) * | 2004-11-09 | 2006-05-25 | Nippon Hoso Kyokai <Nhk> | 撮像素子及びそれを用いた撮像装置 |
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US4731598A (en) * | 1987-08-24 | 1988-03-15 | The United States Of America As Represented By The Secretary Of The Army | Periodic permanent magnet structure with increased useful field |
JP2004055767A (ja) * | 2002-07-18 | 2004-02-19 | Canon Inc | 電子ビーム露光装置及び半導体デバイスの製造方法 |
-
2009
- 2009-07-15 WO PCT/JP2009/062825 patent/WO2011007433A1/ja active Application Filing
- 2009-07-15 JP JP2011522658A patent/JP5221761B2/ja not_active Expired - Fee Related
- 2009-07-15 US US13/383,052 patent/US20120153129A1/en not_active Abandoned
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS588851U (ja) * | 1981-07-10 | 1983-01-20 | 株式会社東芝 | 陰極線管用集束磁界装置 |
JP2005322581A (ja) * | 2004-05-11 | 2005-11-17 | Nippon Hoso Kyokai <Nhk> | 撮像素子及びそれを用いた撮像装置 |
JP2006134804A (ja) * | 2004-11-09 | 2006-05-25 | Nippon Hoso Kyokai <Nhk> | 撮像素子及びそれを用いた撮像装置 |
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JP5221761B2 (ja) | 2013-06-26 |
JPWO2011007433A1 (ja) | 2012-12-20 |
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