WO2011004825A1 - Wafer-pasting adhesive sheet and wafer processing method using the same - Google Patents

Wafer-pasting adhesive sheet and wafer processing method using the same Download PDF

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Publication number
WO2011004825A1
WO2011004825A1 PCT/JP2010/061485 JP2010061485W WO2011004825A1 WO 2011004825 A1 WO2011004825 A1 WO 2011004825A1 JP 2010061485 W JP2010061485 W JP 2010061485W WO 2011004825 A1 WO2011004825 A1 WO 2011004825A1
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WO
WIPO (PCT)
Prior art keywords
wafer
styrene
adhesive sheet
resin film
pressure
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PCT/JP2010/061485
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French (fr)
Japanese (ja)
Inventor
郷史 大田
朗 矢吹
正三 矢野
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古河電気工業株式会社
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Application filed by 古河電気工業株式会社 filed Critical 古河電気工業株式会社
Priority to CN201080030584.7A priority Critical patent/CN102473617B/en
Priority to KR1020117030393A priority patent/KR101336430B1/en
Priority to JP2011521930A priority patent/JPWO2011004825A1/en
Publication of WO2011004825A1 publication Critical patent/WO2011004825A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/50—Additional features of adhesives in the form of films or foils characterized by process specific features
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2453/00—Presence of block copolymer
    • C09J2453/006—Presence of block copolymer in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Definitions

  • the present invention relates to an adhesive sheet for attaching a wafer and a method for processing a wafer using the same, and more particularly, to reduce chipping or cracking (hereinafter referred to as chipping) that occurs when a semiconductor wafer is cut and separated into small pieces.
  • chipping chipping or cracking
  • a semiconductor wafer such as silicon or gallium arsenide is subjected to a picking process after a process of cutting and separating (dicing) into small pieces.
  • a general semiconductor wafer dicing step and pick-up step will be described with reference to cross-sectional views shown in FIGS.
  • a semiconductor wafer 13 is stuck to a wafer sticking adhesive sheet 12 having both ends fixed to a holder 11 and coated with an adhesive on a base resin film (FIG. 2).
  • Chip 14 (FIG. 3).
  • the expander 16 in order to pick up the chip 14, it is pushed up by the expander 16 in the direction of the solid arrow 15 and expanded in the direction of the dotted arrow 17 to expand the interval between the chips 14 (FIG. 4).
  • 14 picks up (FIG. 5). 2 to 5, the same reference numerals mean the same parts.
  • an adhesive sheet obtained by applying an adhesive to a base resin film has been used.
  • a base material made of a relatively soft resin is used in consideration of expandability, and for example, a polyvinyl chloride film or a polyethylene film may be used.
  • chipping or cracking called chipping occurs, and it is not uncommon for the size to be 100 ⁇ m or more.
  • chipping reaches the circuit surface, the performance of the circuit itself may be hindered.
  • chip fragments generated by chipping during the pick-up process may adhere to the surface of another chip and destroy the circuit itself.
  • the present invention is intended to solve the problems associated with the above-described conventional technology, and provides a wafer sticking pressure-sensitive adhesive sheet that can reduce the occurrence of chipping during dicing and a wafer processing method using the same. Let it be an issue.
  • a dynamic viscoelasticity measuring apparatus using a base resin film and a test piece in which a pressure-sensitive adhesive layer is formed on the base resin film, wherein the pressure-sensitive adhesive sheet is processed into a width of 5 mm.
  • the adhesive sheet for sticking a wafer wherein the minimum value of the loss coefficient measured by the above is 0.20 or more.
  • (3) At least one layer of the base resin film is made of styrene-hydrogenated isoprene-styrene block copolymer, styrene-isoprene-styrene copolymer, styrene-hydrogenated butadiene-styrene copolymer, and styrene-hydrogenated.
  • At least one layer of the base resin film is composed of 100 parts by mass of polypropylene resin as component (A), styrene-hydrogenated isoprene-styrene block copolymer, styrene-isoprene-styrene copolymer as component (B).
  • a resin composition comprising 30 to 100 parts by mass of at least one selected from a polymer, a styrene-hydrogenated butadiene-styrene copolymer, and a styrene-hydrogenated isoprene-butadiene-styrene copolymer.
  • the adhesive sheet for sticking a wafer according to any one of (1) to (3).
  • At least one layer of the base resin film is composed of a resin dispersion in which the component (A) is a continuous phase and the component (B) is a dispersed phase, and the average diameter of the dispersed phase particles is 15 nm or more.
  • FIG. 1 is a schematic cross-sectional view showing a preferred embodiment of an adhesive sheet for sticking a wafer of the present invention, wherein a base resin film 1 and an adhesive layer 2 are formed on the base resin film 1.
  • an adhesive sheet contains an adhesive tape (for example, a dicing tape and a dicing die-bonding tape).
  • the adhesive sheet for sticking a wafer of the present invention is measured by applying a tensile stress having a frequency of 400 to 900 Hz at a temperature of 23 ° C. with a dynamic viscoelasticity measuring device using a film-like test piece processed to a width of 5 mm.
  • the minimum value of the loss coefficient is 0.20 or more
  • the minimum value of the loss coefficient measured by applying a tensile stress having a frequency of 650 Hz at a temperature of 15 to 40 ° C. is 0.20 or more.
  • the pressure-sensitive adhesive sheet for wafer sticking of the present invention applies a tensile stress with a frequency of 400 to 900 Hz at a temperature of 23 ° C.
  • the minimum value of the loss coefficient measured by the above is 0.40 or less, and the minimum value of the loss coefficient measured by applying a tensile stress having a frequency of 650 Hz at a temperature of 15 to 40 ° C. is 0.40 or less.
  • This method is a method in which periodic microstrain is given to a specimen and the response to the microstrain is measured. By using this method, it is possible to know how much both the elastic element and the viscous element in the test body are provided. If the test body is a perfect elastic body, the response to it appears in the same phase, and the loss coefficient determined by the ratio of the storage elastic modulus and the loss elastic modulus becomes zero. However, if there is a viscous element, a delay occurs in the response, and the loss coefficient takes a positive value.
  • the storage elastic modulus appears due to the elastic element, and when the elastic element is deformed by applying stress, it receives a response to it and has the property of conserving mechanical energy, whereas the loss elastic modulus is attributed to the viscous element When it is deformed by stress application, mechanical energy corresponding to the applied stress has a property of being consumed as heat.
  • the stress is applied from the rotation of the blade during dicing, but if the loss coefficient when applying a tensile stress to the wafer sticking adhesive sheet is a specific value or more, the wafer sticking adhesive sheet has its stress. It has been found that chipping can be reduced because the vibration of the chip corresponding to the recovery of deformation can be suppressed. Since the value of dynamic viscoelasticity varies depending on the frequency applied and the measurement temperature, it is possible to collect the frequency characteristics with a constant temperature, or to collect the temperature characteristics by applying a constant frequency.
  • the loss coefficient is the storage tensile elastic modulus (E ′) measured with a dynamic viscoelasticity measuring apparatus (for example, trade name “Rheogel-E4000” manufactured by UBM) and the loss tensile elastic modulus. It can be obtained from the ratio (E ′ / E ′′) of (E ′′).
  • the minimum value of the loss coefficient at a frequency of 400 to 900 Hz at a temperature of 23 ° C. can be obtained from the response by fixing the temperature at 23 ° C. and applying a tensile stress to the test piece within a frequency range of 400 to 900 Hz. it can.
  • the minimum value of the loss coefficient at a temperature of 15 to 40 ° C. and a frequency of 650 Hz can be obtained from the response when a tensile stress with a frequency fixed at 650 Hz is applied to the test piece at a temperature of 15 to 40 ° C.
  • Chipping is caused by a rotating blade called a blade at the time of dicing, and the present inventors have examined the cause of the chipping, and the chip sticking generated at the time of dicing can be attenuated by the adhesive sheet attached to the wafer.
  • the present invention provides an adhesive sheet for sticking a wafer with a loss coefficient under a specific condition measured in a film shape by a dynamic viscoelasticity measuring device that exceeds a specific value. It came to complete. When dicing with a blade, heat is generated by contact between the rotating blade and the wafer.
  • the rotation speed of the blade is usually 25000 to 55000 rpm, and the value is converted to a frequency of 400 to 900 Hz.
  • cooling water of 15 to 25 ° C. is flowed to the contact portion during dicing, and the adhesive sheet for adhering the wafer is kept at a substantially constant temperature (for example, 23 ° C.).
  • a substantially constant temperature for example, 23 ° C.
  • the adhesive sheet for adhering a wafer may be brought into contact with the rotating blade, the wafer, and the adhesive sheet for adhering a wafer, for example, at a temperature of 15 to 40 ° C. due to excessive or insufficient cooling. Therefore, by setting the minimum value of the loss coefficient at a temperature of 15 to 40 ° C. and a frequency of 650 Hz to 0.20 or more, chip vibration generated during dicing can be attenuated and chipping can be prevented.
  • the loss factor of the pressure-sensitive adhesive sheet to be attached to the wafer is 0.20 or more, preferably 0.22 or more. If the loss factor is too small, vibration due to the dicing blade cannot be reduced, and chipping is difficult to prevent. Usually, the loss coefficient of the pressure-sensitive adhesive sheet to be attached to a wafer is 0.40 or less.
  • the 5% modulus of the base resin film is 4.0 to 7.0 MPa and the tear strength is 100 N / mm or more.
  • the 5% modulus of the base resin film can be obtained by measuring the stress at 5% strain according to JIS K 7127/2/300. If the base resin film has a 5% modulus and tear strength within this range, even if sufficient tensile stress is applied in the expanding process, the base resin film will not tear and the chip spacing will be expanded evenly. can do. If the 5% modulus of the base resin film is too large, the adhesive sheet for adhering to a wafer of the present invention cannot sufficiently expand the chip interval in the expanding process for expanding the interval between the chips 14 shown in FIG.
  • the 5% modulus of the base resin film is too small, the pressure-sensitive adhesive sheet for wafer sticking may be stretched with low stress, which may hinder handling.
  • the 5% modulus of the base resin film is preferably 4.5 to 6.5 MPa, more preferably 5.0 to 6.5 MPa.
  • the 5% modulus in the MD direction and the TD direction of the base resin film of the adhesive sheet for wafer sticking of the present invention is 4.0 to 7.0 MPa. It is preferable.
  • the tear strength of the base resin film is 100 N / mm or more.
  • the tear strength of the base resin film can be obtained according to JIS K7128-3.
  • the adhesive sheet for affixing a wafer having a tear strength of the base resin film of less than 100 N / mm may be broken in the expanding step.
  • the tear strength of the base resin film is preferably 110 N / mm or more, more preferably 115 N / mm or more.
  • the tear strength of the base resin film in the MD direction and the TD direction of the base resin film of the adhesive sheet for wafer sticking of the present invention is 100 N / mm or more. It is preferable that
  • the base resin film can be used without particular limitation as long as it has excellent heat resistance against cutting of the wafer with a blade in the dicing process.
  • the resin of the base resin film includes those that can be formed into a sheet shape, such as plastic, thermoplastic elastomer, and rubber.
  • this resin include styrene-hydrogenated isoprene-styrene block copolymer (hereinafter referred to as “SEPS”), styrene-isoprene-styrene copolymer (hereinafter referred to as “SIS”), styrene-hydrogenated butadiene-styrene copolymer.
  • the base resin film 1 may be a single layer or multiple layers. In the case of multiple layers, different materials or the same material may be used, but at least one of the layers constituting the base resin film 1 is the above SEPS, It is preferable to contain at least one selected from SIS, SEBS, and SEEPS.
  • the layers composed of at least one selected from SEPS, SIS, SEBS, and SEEPS can be laminated and used in combination.
  • the layer comprising at least one selected from the above SEPS, SIS, SEBS, and SEEPS includes polypropylene, low density polyethylene (LDPE), linear low density polyethylene (LLDPE), ethylene / propylene copolymer, propylene copolymer Polymer, Ethylene-propylene-diene copolymer vulcanizate, polybutene, polybutadiene, polymethylpentene, ethylene-vinyl acetate copolymer, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid methyl copolymer Polymer, ethylene- (meth) acrylate copolymer, polyvinyl chloride, vinyl chloride-vinyl acetate copolymer, ethylene-vinyl chloride-vinyl acetate copolymer, polyurethane, polyamide, ionomer, nitrile rubber, butyl rubber, Styrene isoprene rubber, styrene butad
  • the ionomer refers to a resin in which molecules of an ethylene-methacrylic acid copolymer or ethylene-acrylic acid copolymer are intermolecularly bonded with a metal ion such as sodium or zinc. Zinc is preferred as the metal ion.
  • At least one of the layers constituting the base resin film is a polypropylene resin as the component (A), a styrene-hydrogenated isoprene-styrene block copolymer, a styrene-isoprene-styrene copolymer as the component (B),
  • a resin composition containing at least one selected from a styrene-hydrogenated butadiene-styrene copolymer and a styrene-hydrogenated isoprene-butadiene-styrene copolymer is preferable.
  • the polypropylene resin in this case includes a propylene homopolymer, an ethylene-propylene copolymer, an ethylene-propylene-diene copolymer vulcanizate, other propylene copolymers, and the like. Either a polymer or a block copolymer may be used and is appropriately selected.
  • the blending amount of the polypropylene resin of component (A) and at least one selected from SEPS, SIS, SEBS and SEEPS of component (B) takes into consideration the balance between film strength and vibration damping properties. It can be determined as appropriate. It is preferable that at least one selected from SEPS, SIS, SEBS and SEEPS of component (B) is 30 to 100 parts by mass with respect to 100 parts by mass of component (A) polypropylene resin. When the amount of at least one selected from SEPS, SIS, SEBS and SEEPS of the component (B) is too small relative to 100 parts by mass of the component (A), sufficient vibration damping properties cannot be obtained, and the chipping suppressing effect is obtained. It may be small. Moreover, when there are too many at least 1 sort (s) selected from SEPS, SIS, SEBS, and SEEPS of (B) component with respect to 100 mass parts of (A) component, the film itself becomes too soft and troubles arise in handling. .
  • resin (A) is a continuous phase
  • component (B) is a dispersed phase
  • the average diameter of the dispersed phase particles is 15 nm or more. A dispersion is preferred.
  • the upper limit of the particles of the dispersed phase is not particularly limited, but if it is too large, the film strength may locally vary, and is preferably 25 nm or less.
  • energy is applied due to the collision of molecular chains or side chains between the components (B) in the process of pulling or restoring during stress application.
  • causes loss when the average diameter of the dispersed phase of component (B) is too small, there are few adjacent molecular chains, so that sufficient energy loss for suppressing chipping cannot be obtained, and it is difficult to attenuate the chip vibration generated during dicing. There is a case.
  • the surface of the base resin film that contacts the pressure-sensitive adhesive layer may be subjected to corona treatment or may be provided with other layers such as a primer.
  • the thickness of the base resin film 1 is not particularly limited, but is preferably 30 to 200 ⁇ m, particularly preferably 50 to 100 ⁇ m.
  • the thickness of the SEPS, SIS, SEBS or SEEPS-containing layer is preferably 5 to 100 ⁇ m.
  • the pressure-sensitive adhesive layer can be formed of various pressure-sensitive adhesives.
  • the resin component used in such an adhesive is not limited at all.
  • an adhesive having a base polymer such as a rubber polymer such as natural rubber or various synthetic rubbers, an acrylic polymer, a silicone polymer, or a polyvinyl ether polymer is used.
  • acrylic polymers such as poly (meth) acrylic acid alkyl esters, copolymers of (meth) acrylic acid alkyl esters and other unsaturated monomers copolymerizable therewith. .
  • a crosslinking agent can be blended.
  • the cross-linking agent by appropriately selecting a cross-linking agent having a functional group capable of reacting with the functional group corresponding to the functional group in the resin component, the cohesive force is imparted to the pressure-sensitive adhesive and the initial pressure-sensitive adhesive is used.
  • the force can be set to a desired value.
  • the crosslinking agent include isocyanate crosslinking agents, epoxy crosslinking agents, metal chelate crosslinking agents, aziridine crosslinking agents, and amine resins. From the viewpoint of versatility, an isocyanate-based crosslinking agent is preferable as the crosslinking agent.
  • polyvalent isocyanate compounds such as 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylene diisocyanate, diphenylmethane-4,4′- Diisocyanate, diphenylmethane-2,4′-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4′-diisocyanate, dicyclohexylmethane-2,4′-diisocyanate, lysine isocyanate, etc. are used. .
  • the pressure-sensitive adhesive can contain various additive components as desired within the range in which the object of the present invention is not impaired.
  • a radiation curable or heat-foamed pressure-sensitive adhesive can be used.
  • the radiation curable adhesive it is possible to use an adhesive that is cured by ultraviolet rays, electron beams, etc., and easily peels off at the time of peeling. An adhesive that easily peels can be used.
  • the radiation curable pressure-sensitive adhesive for example, those described in JP-B-1-56112, JP-A-7-135189 and the like are preferably used, but are not limited thereto.
  • At least two photopolymerizable carbons in the molecule for a normal rubber-based or acrylic pressure-sensitive resin component For example, at least two photopolymerizable carbons in the molecule for a normal rubber-based or acrylic pressure-sensitive resin component.
  • a low molecular weight photopolymerizable compound having a carbon double bond hereinafter referred to as a photopolymerizable compound
  • a photopolymerization initiator can be blended.
  • Examples of the photopolymerizable compound include trimethylolpropane triacrylate, tetramethylolmethane tetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butylene.
  • Examples include glycol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, organopolysiloxane composition, commercially available oligoester acrylate, and urethane acrylate.
  • one having a photocurable carbon-carbon double bond may be used.
  • an acrylic copolymer and / or a methacrylic copolymer (a1) having a photocurable carbon-carbon double bond with respect to a repeating unit of the main chain and having a functional group, and the functional group The thing obtained by making it react with the compound (a2) which has a functional group which can react can be mentioned.
  • the acrylic copolymer and / or methacrylic copolymer (a1) having a radiation curable carbon-carbon double bond and a functional group with respect to the repeating unit of the main chain is, for example, radiation curing.
  • a monomer (a1-1) such as an alkyl acrylate and / or alkyl methacrylate having a functional carbon-carbon double bond and a monomer (a1-2) having a functional group are copolymerized. Obtainable.
  • a (meth) acrylic acid alkyl ester having 6 to 12 carbon atoms in the alkyl group of the alkyl ester eg, hexyl acrylate, n-octyl acrylate, isooctyl acrylate, 2- Ethyl hexyl acrylate, dodecyl acrylate, decyl acrylate.
  • (meth) acrylic acid alkyl ester having 5 or less carbon atoms in the alkyl group of the alkyl ester (for example, pentyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, methyl acrylate, or similar methacrylates) Can be mentioned.
  • Examples of the functional group possessed by the monomer (a1-2) include a carboxyl group, a hydroxyl group, an amino group, a cyclic acid anhydride group, an epoxy group, and an isocyanate group.
  • Specific examples of the monomer (a1-2) include, for example, acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, Glycol monoacrylates, glycol monomethacrylates, N-methylolacrylamide, N-methylolmethacrylamide, allyl alcohol, N-alkylaminoethyl acrylates, N-alkylaminoethyl methacrylates, acrylamides, methacrylamides, maleic anhydride Itaconic anhydride, fumaric anhydride, phthalic anhydride, glycidyl acrylate, glycidyl methacrylate,
  • examples of the functional group (a1) include a hydroxyl group, an epoxy group, and an isocyanate group.
  • examples of the functional group (a2) include a hydroxyl group, an epoxy group, and an isocyanate group.
  • examples of the functional group (a2) include a hydroxyl group, examples of the functional group (a1) include a cyclic acid anhydride group and an isocyanate group.
  • examples of the functional group (a2) include an epoxy group and an isocyanate group.
  • examples of the functional group of (a2) include a carboxyl group, a cyclic acid anhydride group, and an amino group.
  • an ultraviolet curable pressure-sensitive adhesive by mixing a photopolymerization initiator in the pressure-sensitive adhesive, it is possible to reduce the polymerization curing time and the amount of ultraviolet irradiation by ultraviolet irradiation.
  • a photopolymerization initiator include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzyldiphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, dibenzyl, diacetyl, ⁇ -chloranthraquinone and the like can be mentioned.
  • the thickness of the pressure-sensitive adhesive layer is not particularly limited, but is preferably 4 to 30 ⁇ m, particularly preferably 5 to 25 ⁇ m.
  • the pressure-sensitive adhesive sheet for sticking a wafer of the present invention can be used as a dicing tape without further providing an adhesive layer on the pressure-sensitive adhesive layer.
  • the pressure-sensitive adhesive layer of the present invention is a pressure-sensitive adhesive that can also be used for dicing die bonding, it can be used as a dicing die-bonding tape.
  • the pressure-sensitive adhesive layer is peeled off from the base resin film, and direct bonding can be performed thereafter using the chip having the pressure-sensitive adhesive layer attached to the chip.
  • the pressure-sensitive adhesive sheet for wafer sticking of the present invention may be one in which an adhesive layer is laminated at least on the part to be stuck to the wafer on the pressure-sensitive adhesive layer.
  • the adhesive layer adheres to the chip and is used as an adhesive when fixing the chip to the substrate or lead frame Is done.
  • a film-like adhesive generally used for dicing die-bonding sheets can be used, such as an acrylic adhesive, an epoxy resin / phenolic resin / acrylic resin blend adhesive, and the like. It can be preferably used.
  • the thickness may be appropriately set, but is preferably about 5 to 100 ⁇ m.
  • the resin composition constituting the adhesive layer has such adhesiveness that it can be bonded to a wafer at normal temperature and can be diced, and can be peeled off from the adhesive layer after the dicing is completed, and then the adhesive property is obtained by heating. Appears and acts as a die bond agent.
  • the heating at this time is not particularly limited, but is preferably performed at 40 to 100 ° C., more preferably at 60 to 80 ° C.
  • the wafer can be bonded to the adhesive sheet for sticking a wafer of the present invention, and the wafer can be diced and picked up as shown in FIGS.
  • not cutting up to the base resin film reduces cutting resistance of the dicing blade, smoothes wafer cutting, and reduces chipping. ,preferable. More preferably, it is preferable to perform the maximum cutting up to about 2/3 of the thickness of the pressure-sensitive adhesive layer.
  • the setting of the cutting depth of the dicing apparatus to be used may be appropriately changed according to the manual.
  • the bare wafer used in the present invention is not particularly limited, and can be appropriately selected from any conventionally used bare wafers.
  • Coronate L 3 parts by weight, 10 parts by weight of tetramethylolmethane tetraacrylate as a photopolymerizable compound, and 1 part by weight of ⁇ -hydroxycyclohexyl phenyl ketone as a photopolymerization initiator are mixed and mixed to form an adhesive composition.
  • Product 1 was obtained
  • Adhesive composition 2 2-hydroxyhexyl acrylate (69 mol%), 2-hydroxyethyl acrylate (29 mol%) and a methacrylic acid (2 mol%) copolymer of 2-hydroxyethyl acrylate side chain terminal hydroxyl group and 2-methacryloyloxyethyl isocyanate By reacting the isocyanate group, an acrylic copolymer having a photocurable carbon-carbon double bond was obtained.
  • Example 1 to 3, 6, 7 and Comparative Examples 1 and 2 In Examples 1 to 3, 7 and Comparative Example 1, styrene-hydrogenated isoprene-styrene block copolymer (SEPS) (trade name “Septon KF-2104” manufactured by Kuraray Co., Ltd.) and homopropylene (PP) (Ube) Manufactured by Kosan Co., Ltd., trade name “J-105G”) at a blending ratio shown in Table 1, and processed by film extrusion at about 200 ° C. with a twin-screw kneader to form a base resin film having a thickness of 100 ⁇ m. Manufactured.
  • SEPS styrene-hydrogenated isoprene-styrene block copolymer
  • PP homopropylene
  • Example 6 a styrene-hydrogenated isoprene-styrene block copolymer (SEPS) (manufactured by Kuraray Co., Ltd., trade name “Septon KF-2104”) of 30 ⁇ m was prepared.
  • This resin film is used as an intermediate layer, and styrene-hydrogenated isoprene-styrene block copolymer (SEPS) is added to 100 parts by mass of homopropylene (PP) (trade name “J-105G”, manufactured by Ube Industries) on both sides of the resin film.
  • PP homopropylene
  • the pressure-sensitive adhesive composition 1 was applied to a thickness of 10 ⁇ m and then cured to form a pressure-sensitive adhesive layer.
  • Examples 1 to 3, 6 , 7 and Comparative Examples 1 and 2 were prepared as pressure-sensitive adhesive sheets for attaching wafers.
  • Example 4 and 5 instead of the styrene-hydrogenated isoprene-styrene block copolymer (SEPS), a pressure-sensitive adhesive sheet for wafer sticking, which was carried out in the same manner as in Example 1, except that the following copolymers were mixed in the mixing ratios shown in Table 1, respectively.
  • SEPS Styrene-hydrogenated butadiene-styrene copolymer
  • SEEPS Styrene-hydrogenated isoprene / butadiene-styrene copolymer
  • SEEPS Styrene-hydrogenated isoprene / butadiene-styrene copolymer
  • Example 8 The pressure-sensitive adhesive composition 2 was applied to one surface of the base resin film produced in Example 1 to a thickness of 10 ⁇ m, and then cured to form a pressure-sensitive adhesive layer. A pressure-sensitive adhesive sheet for wafer sticking was produced.
  • Example 9 ⁇ Production of die bond film> 50 parts by mass of a cresol novolac type epoxy resin (epoxy equivalent 197, molecular weight 1200, softening point 70 ° C.) as an epoxy resin, 1.5 parts by mass of ⁇ -mercaptopropyltrimethoxysilane as a silane coupling agent, ⁇ -ureidopropyltriethoxysilane 3 parts by mass and 30 parts by mass of silica filler having an average particle diameter of 16 nm were blended, cyclohexanone was added and stirred and mixed, and further kneaded for 90 minutes using a bead mill.
  • a cresol novolac type epoxy resin epoxy equivalent 197, molecular weight 1200, softening point 70 ° C.
  • a surface gold-deposited silicon wafer having a diameter of 6 inches and a thickness of 350 ⁇ m was pasted on the pressure-sensitive adhesive layer or adhesive layer of the pressure-sensitive adhesive sheet to be adhered to the wafers of Examples 1 to 9 and Comparative Examples 1 and 2, and a dicing apparatus (DISCO Dicing was performed using a DAD-340) manufactured by the company so that the chip size was 5 mm square.
  • the dicing conditions are: a rotating round blade rotation speed: 40000 rpm, a cutting speed: 100 mm / s, and a cutting water flow rate of 20 mL.
  • the depth which a rotary round blade cuts into an adhesive sheet in the case of dicing was performed so that it might be set to 30 micrometers.
  • Test pieces having a width of 5 mm and a length of 10 mm were cut out from the adhesive sheets for sticking wafers of Examples 1 to 9 and Comparative Examples 1 and 2.
  • the test piece is fixed to a supporting jig of a dynamic viscoelasticity measuring apparatus (Rheogel-E4000, manufactured by UBM), measured at a temperature of 23 ° C. and a frequency of 400 to 900 Hz, and has a minimum loss coefficient within that range. Got the value.
  • Rogel-E4000 dynamic viscoelasticity measuring apparatus
  • test pieces of 5 mm width ⁇ 10 mm length cut out from the adhesive sheets for attaching wafers of Examples 1 to 7 and Comparative Examples 1 and 2 were similarly fixed to the supporting jig of the dynamic viscoelasticity measuring apparatus. Then, measurement was performed at a frequency of 650 Hz and a temperature of 15 to 40 ° C., and the minimum value of the loss coefficient within the range was obtained.
  • Chipability The wafer was mounted on the adhesive sheet for attaching wafers of Examples 1 to 9 and Comparative Examples 1 and 2, and dicing was performed. After that, UV irradiation was performed (500 mJ / m 2 ), 50 chips were randomly taken out from one wafer, and the maximum chipping size on each side of the chip back surface (adhesive surface) was measured with a microscope (100 to 200 times). The average of all values was calculated.
  • the wafer was mounted on the adhesive sheet for attaching wafers of Examples 1 to 9 and Comparative Examples 1 and 2, and dicing was performed. Thereafter, ultraviolet irradiation was performed (500 mJ / m 2 ), and using an expanding apparatus (trade name “TEX-218G” manufactured by Technovision), the adhesive sheet was evaluated for the presence or absence of breakage.
  • the particle diameter of the dispersed phase in the field of view (200 nm ⁇ 200 nm) of the transmission electron microscope was measured, and the average value was obtained.
  • the average diameter of the SEPS in Example 1 was 21 nm.
  • the average diameter of SEPS of Example 2 was 19 nm.
  • the average diameter of Example 3 was 18 nm.
  • the adhesive sheets for attaching wafers of Examples 1 to 9 can greatly reduce the size of chipping to 1 ⁇ 2 or less compared to the adhesive sheets for attaching wafers of Comparative Examples 1 and 2, and are expanded. Also showed good performance.

Abstract

Provided is a wafer-pasting adhesive sheet, which comprises a base-material resin film, and an adhesive sheet that has an adhesive layer formed on the base-material resin film, wherein the wafer-pasting adhesive sheet has, when using a test strip that is obtained by processing the adhesive sheet so as to have a width of 5 mm, and using a dynamic-viscoelasticity measurement device, a minimum value of 0.20 or more for a loss-factor measured by applying a tensile stress with a frequency of 400-900 Hz, at a temperature of 23°C, and a minimum value of 0.20 or more for a loss-factor measured by applying a tensile stress with a frequency of 650 Hz, at a temperature of 15-40°C.

Description

ウエハ貼着用粘着シートおよびそれを用いたウエハの加工方法Wafer sticking adhesive sheet and wafer processing method using the same
　本発明はウエハ貼着用粘着シートおよびそれを用いたウエハの加工方法に関し、さらに詳しくは、半導体ウエハを小片に切断分離する際に発生するチップの欠けもしくはヒビ（以後、チッピングと記載）を低減することができるウエハ貼着用粘着シートおよびそれを用いたウエハの加工方法に関する。 The present invention relates to an adhesive sheet for attaching a wafer and a method for processing a wafer using the same, and more particularly, to reduce chipping or cracking (hereinafter referred to as chipping) that occurs when a semiconductor wafer is cut and separated into small pieces. The present invention relates to an adhesive sheet for attaching a wafer and a method for processing a wafer using the same.
　ＩＣ、ＬＳＩなどの半導体装置の製造工程においては、シリコン、ガリウムヒ素などの半導体ウエハは小片に切断分離（ダイシング）する工程の後、ピックアップ工程に供される。一般的な半導体ウエハのダイシング工程及びピックアップ工程について図２～５に示した断面図を参照しながら説明する。 In a manufacturing process of a semiconductor device such as IC or LSI, a semiconductor wafer such as silicon or gallium arsenide is subjected to a picking process after a process of cutting and separating (dicing) into small pieces. A general semiconductor wafer dicing step and pick-up step will be described with reference to cross-sectional views shown in FIGS.
　まず、両端がホルダー１１に固定されている、基材樹脂フィルム上に粘着剤を塗布したウエハ貼着用粘着シート１２に、半導体ウエハ１３を貼着し（図２）、ダイシングによりウエハを素子小片（チップ）１４に分割する（図３）。次いで、チップ１４をピックアップするために、実線矢印方向１５にエキスパンダー１６により突き上げ、点線矢印方向１７にエキスパンドしてチップ１４間の間隔を拡張し（図４）、全チップ１４のピックアップもしくは一部チップ１４のピックアップを行う（図５）。なお、図２～５において、同じ符号は同じものを意味する。 First, a semiconductor wafer 13 is stuck to a wafer sticking adhesive sheet 12 having both ends fixed to a holder 11 and coated with an adhesive on a base resin film (FIG. 2). Chip) 14 (FIG. 3). Next, in order to pick up the chip 14, it is pushed up by the expander 16 in the direction of the solid arrow 15 and expanded in the direction of the dotted arrow 17 to expand the interval between the chips 14 (FIG. 4). 14 picks up (FIG. 5). 2 to 5, the same reference numerals mean the same parts.
　従来、半導体ウエハのダイシング工程からピックアップ工程に至る工程では、基材樹脂フィルムに粘着剤を塗布した粘着シートが用いられてきた。このような粘着シートにおいて、エキスパンド性を考慮して、比較的軟質な樹脂からなる基材が用いられており、たとえばポリ塩化ビニルフィルムやポリエチレン系フィルムが用いられることがある。
　ダイシング時には、チッピングと呼ばれるチップの欠け・ヒビが生じ、大きさは１００μｍ以上となることは珍しくなく、回路面にチッピングが達すると回路そのものの性能に支障を来たすこともある。また、ピックアップ工程の際にチッピングにより生じたチップの破片が他のチップ表面に付着し、回路そのものを破壊することがある。 Conventionally, in a process from a dicing process of a semiconductor wafer to a pickup process, an adhesive sheet obtained by applying an adhesive to a base resin film has been used. In such an adhesive sheet, a base material made of a relatively soft resin is used in consideration of expandability, and for example, a polyvinyl chloride film or a polyethylene film may be used.
During dicing, chipping or cracking called chipping occurs, and it is not uncommon for the size to be 100 μm or more. When chipping reaches the circuit surface, the performance of the circuit itself may be hindered. In addition, chip fragments generated by chipping during the pick-up process may adhere to the surface of another chip and destroy the circuit itself.
　ダイシングに使用されるブレードと呼ばれる回転刃により、切削中のチップは振動する。その際、チップとブレードが接触してチッピングが生じる。従って、粘着シートの代わりにワックスでウエハを完全に固定し、振動が起こらないようにする方法もある（例えば、特許文献１参照）。しかし繰り返しダイシングを行う製造工程の場合は、ワックスによる固定・除去が手間となるため、特許文献１記載の方法は現実的とはいえない。また、ワックスが完全に除去できない場合は、ワックスがウエハの汚染として残るため、汚染物質を極度に嫌う電子機器においては、特許文献１の方法を適用することは難しい。 ¡The cutting tip vibrates by a rotary blade called a blade used for dicing. At that time, the chip and the blade come into contact with each other to cause chipping. Therefore, there is a method in which the wafer is completely fixed with wax instead of the adhesive sheet so that vibration does not occur (for example, see Patent Document 1). However, in the case of a manufacturing process in which dicing is repeatedly performed, fixing and removing with wax is troublesome, so the method described in Patent Document 1 is not practical. In addition, when the wax cannot be completely removed, the wax remains as contamination of the wafer. Therefore, it is difficult to apply the method of Patent Document 1 to an electronic device that is extremely disliked by the contaminant.
特開平７－１６９７１８号公報Japanese Patent Laid-Open No. 7-169718
　本発明は、上記の従来技術に伴う問題点を解決しようとするものであり、ダイシング時に発生するチッピングの発生を低減できるウエハ貼着用粘着シートおよびそれを用いたウエハの加工方法を提供することを課題とする。 The present invention is intended to solve the problems associated with the above-described conventional technology, and provides a wafer sticking pressure-sensitive adhesive sheet that can reduce the occurrence of chipping during dicing and a wafer processing method using the same. Let it be an issue.
　本発明者らは、上記課題について鋭意検討した結果、ウエハ貼着用粘着シートに特定の損失係数を有するようにすることで、上記課題を解決できることを見出し、本発明はその知見に基づきなされたものである。
　すなわち、本発明によれば以下の手段が提供される。
（１）基材樹脂フィルムと、該基材樹脂フィルム上に粘着剤層が形成された粘着シートであって、該粘着シートを幅５ｍｍに加工した試験片を用いて、動的粘弾性測定装置により、温度２３℃において周波数４００～９００Ｈｚの引張応力を印加することにより測定された損失係数の最小値が０．２０以上であり、かつ温度１５～４０℃において周波数６５０Ｈｚの引張応力を印加することにより測定された損失係数の最小値が０．２０以上であることを特徴とするウエハ貼着用粘着シート。
（２）前記基材樹脂フィルムの５％モジュラスが４．０～７．０ＭＰａであり、かつ引き裂き強さが１００Ｎ／ｍｍ以上であることを特徴とする（１）記載のウエハ貼着用粘着シート。
（３）前記基材樹脂フィルムの少なくとも１層が、スチレン－水添イソプレン－スチレンブロック共重合体、スチレン－イソプレン－スチレン共重合体、スチレン－水添ブタジエン－スチレン共重合体およびスチレン－水添イソプレン－ブタジエン－スチレン共重合体から選ばれた少なくとも１種を含有することを特徴とする（１）または（２）に記載のウエハ貼着用粘着シート。
（４）前記基材樹脂フィルムの少なくとも１層が、（Ａ）成分としてポリプロピレン樹脂１００質量部に対し、（Ｂ）成分としてスチレン－水添イソプレン－スチレンブロック共重合体、スチレン－イソプレン－スチレン共重合体、スチレン－水添ブタジエン－スチレン共重合体およびスチレン－水添イソプレン－ブタジエン－スチレン共重合体から選ばれた少なくとも１種３０～１００質量部を含有する樹脂組成物であることを特徴とする（１）～（３）のいずれか１項に記載のウエハ貼着用粘着シート。
（５）前記基材樹脂フィルムのうち少なくとも１層が、（Ａ）成分を連続相とし、（Ｂ）成分を分散相とする樹脂分散体で構成され、当該分散相粒子の平均直径が１５ｎｍ以上であることを特徴とする（４）に記載のウエハ貼着用粘着シート。
（６）前記粘着剤層上にさらに接着剤層が形成されたことを特徴とする（１）～（５）のいずれか１項に記載のウエハ貼着用粘着シート。
（７）前記粘着剤層を形成する粘着剤がアクリル系粘着剤であることを特徴とする（１）～（６）のいずれか１項に記載のウエハ貼着用粘着シート。
（８）（１）～（７）のいずれか１項に記載のウエハ貼着用粘着シートにウエハを貼合し、該ウエハのダイシングを行うウエハの加工方法であって、前記基材樹脂フィルムまで切り込みを行わないことを特徴とするウエハの加工方法。 As a result of intensive studies on the above problems, the present inventors have found that the above problems can be solved by having a specific loss factor in the adhesive sheet to be attached to a wafer, and the present invention has been made based on the findings. It is.
That is, according to the present invention, the following means are provided.
(1) A dynamic viscoelasticity measuring apparatus using a base resin film and a test piece in which a pressure-sensitive adhesive layer is formed on the base resin film, wherein the pressure-sensitive adhesive sheet is processed into a width of 5 mm. By applying a tensile stress of frequency 650 Hz at a temperature of 15-40 ° C., the minimum value of the loss factor measured by applying a tensile stress of frequency 400-900 Hz at a temperature of 23 ° C. The adhesive sheet for sticking a wafer, wherein the minimum value of the loss coefficient measured by the above is 0.20 or more.
(2) The adhesive sheet for adhering a wafer according to (1), wherein the substrate resin film has a 5% modulus of 4.0 to 7.0 MPa and a tear strength of 100 N / mm or more.
(3) At least one layer of the base resin film is made of styrene-hydrogenated isoprene-styrene block copolymer, styrene-isoprene-styrene copolymer, styrene-hydrogenated butadiene-styrene copolymer, and styrene-hydrogenated. The pressure-sensitive adhesive sheet for sticking to a wafer according to (1) or (2), comprising at least one selected from isoprene-butadiene-styrene copolymer.
(4) At least one layer of the base resin film is composed of 100 parts by mass of polypropylene resin as component (A), styrene-hydrogenated isoprene-styrene block copolymer, styrene-isoprene-styrene copolymer as component (B). A resin composition comprising 30 to 100 parts by mass of at least one selected from a polymer, a styrene-hydrogenated butadiene-styrene copolymer, and a styrene-hydrogenated isoprene-butadiene-styrene copolymer. The adhesive sheet for sticking a wafer according to any one of (1) to (3).
(5) At least one layer of the base resin film is composed of a resin dispersion in which the component (A) is a continuous phase and the component (B) is a dispersed phase, and the average diameter of the dispersed phase particles is 15 nm or more. (4) The adhesive sheet for sticking a wafer according to (4).
(6) The adhesive sheet for sticking to a wafer according to any one of (1) to (5), wherein an adhesive layer is further formed on the adhesive layer.
(7) The adhesive sheet for adhering a wafer according to any one of (1) to (6), wherein the adhesive forming the adhesive layer is an acrylic adhesive.
(8) A wafer processing method in which a wafer is bonded to the wafer sticking adhesive sheet described in any one of (1) to (7), and the wafer is diced up to the base resin film. A wafer processing method, characterized in that no cutting is performed.
　本発明に係るウエハ貼着用粘着シートおよびそれを用いたウエハの加工方法により、チッピングを大幅に減少することができる。
　本発明の上記及び他の特徴及び利点は、適宜添付の図面を参照して、下記の記載からより明らかになるであろう。 The chipping can be greatly reduced by the wafer sticking pressure-sensitive adhesive sheet and the wafer processing method using the same.
The above and other features and advantages of the present invention will become more apparent from the following description, with reference where appropriate to the accompanying drawings.
本発明のウエハ貼着用粘着シートの一実施形態を示す断面図である。It is sectional drawing which shows one Embodiment of the adhesive sheet for wafer sticking of this invention. 半導体ウエハのダイシング工程及びピックアップ工程を説明する断面図である。It is sectional drawing explaining the dicing process and pick-up process of a semiconductor wafer. 半導体ウエハのダイシング工程及びピックアップ工程を説明する断面図である。It is sectional drawing explaining the dicing process and pick-up process of a semiconductor wafer. 半導体ウエハのダイシング工程及びピックアップ工程を説明する断面図である。It is sectional drawing explaining the dicing process and pick-up process of a semiconductor wafer. 半導体ウエハのダイシング工程及びピックアップ工程を説明する断面図である。It is sectional drawing explaining the dicing process and pick-up process of a semiconductor wafer.
　図１は本発明のウエハ貼着用粘着シートの好ましい実施態様を示す概略断面図であり、基材樹脂フィルム１と、基材樹脂フィルム１上に粘着剤層２が形成されている。本発明において、後述の工程の説明で示されるように、粘着シートは粘着テープ（例えば、ダイシングテープやダイシングダイボンドテープ）を含むものである。 FIG. 1 is a schematic cross-sectional view showing a preferred embodiment of an adhesive sheet for sticking a wafer of the present invention, wherein a base resin film 1 and an adhesive layer 2 are formed on the base resin film 1. In this invention, as shown by description of the process mentioned later, an adhesive sheet contains an adhesive tape (for example, a dicing tape and a dicing die-bonding tape).
　本発明のウエハ貼着用粘着シートは、幅５ｍｍに加工したフィルム状の試験片を用いて、動的粘弾性測定装置により、温度２３℃において周波数４００～９００Ｈｚの引張応力を印加することにより測定された損失係数の最小値が０．２０以上であり、かつ温度１５～４０℃において周波数６５０Ｈｚの引張応力を印加することにより測定された損失係数の最小値が０．２０以上である。通常は、本発明のウエハ貼着用粘着シートは、幅５ｍｍに加工したフィルム状の試験片を用いて、動的粘弾性測定装置により、温度２３℃において周波数４００～９００Ｈｚの引張応力を印加することにより測定された損失係数の最小値は０．４０以下であり、かつ温度１５～４０℃において周波数６５０Ｈｚの引張応力を印加することにより測定された損失係数の最小値は０．４０以下である。 The adhesive sheet for sticking a wafer of the present invention is measured by applying a tensile stress having a frequency of 400 to 900 Hz at a temperature of 23 ° C. with a dynamic viscoelasticity measuring device using a film-like test piece processed to a width of 5 mm. The minimum value of the loss coefficient is 0.20 or more, and the minimum value of the loss coefficient measured by applying a tensile stress having a frequency of 650 Hz at a temperature of 15 to 40 ° C. is 0.20 or more. Usually, the pressure-sensitive adhesive sheet for wafer sticking of the present invention applies a tensile stress with a frequency of 400 to 900 Hz at a temperature of 23 ° C. with a dynamic viscoelasticity measuring device using a film-like test piece processed to a width of 5 mm. The minimum value of the loss coefficient measured by the above is 0.40 or less, and the minimum value of the loss coefficient measured by applying a tensile stress having a frequency of 650 Hz at a temperature of 15 to 40 ° C. is 0.40 or less.
　ここで一般的な動的粘弾性の測定方法について説明する。当該方法は、試験体に周期的な微小歪を与え、それに対する応答を測定する方法である。この方法を用いることにより、試験体における弾性要素と粘性要素の両方の要素をどの程度有するのか知ることができる。試験体が完全な弾性体であれば、それに対する応答は同位相で現れ、貯蔵弾性率と、損失弾性率の比で求められる損失係数は零となる。しかし粘性要素が存在すると、応答に遅れが生じ、損失係数は、正の値をとる。
　貯蔵弾性率は弾性要素に起因して現れ、弾性要素は応力印加によって変形した際、それに対する応答を受け、力学的エネルギーが保存される性質を有するのに対し、損失弾性率は粘性要素に起因して現れ、応力印加によって変形した際、印加した応力に応じた力学的エネルギーは熱として消費される性質を有する。
　本発明においては、ダイシング加工時に応力はブレードの回転から与えられるが、ウエハ貼着用粘着シートに引張応力を印加した場合の損失係数が特定の値以上であれば、ウエハ貼着用粘着シートがその応力に対する変形の回復に対応するチップの振動を抑制できるため、チッピングを低減できることを見出した。
　また動的粘弾性は印加される周波数と測定温度によりその値は変化するため、温度を一定とし周波数特性を採取することや、一定周波数を印加して温度特性を採取することが可能である。 Here, a general method for measuring dynamic viscoelasticity will be described. This method is a method in which periodic microstrain is given to a specimen and the response to the microstrain is measured. By using this method, it is possible to know how much both the elastic element and the viscous element in the test body are provided. If the test body is a perfect elastic body, the response to it appears in the same phase, and the loss coefficient determined by the ratio of the storage elastic modulus and the loss elastic modulus becomes zero. However, if there is a viscous element, a delay occurs in the response, and the loss coefficient takes a positive value.
The storage elastic modulus appears due to the elastic element, and when the elastic element is deformed by applying stress, it receives a response to it and has the property of conserving mechanical energy, whereas the loss elastic modulus is attributed to the viscous element When it is deformed by stress application, mechanical energy corresponding to the applied stress has a property of being consumed as heat.
In the present invention, the stress is applied from the rotation of the blade during dicing, but if the loss coefficient when applying a tensile stress to the wafer sticking adhesive sheet is a specific value or more, the wafer sticking adhesive sheet has its stress. It has been found that chipping can be reduced because the vibration of the chip corresponding to the recovery of deformation can be suppressed.
Since the value of dynamic viscoelasticity varies depending on the frequency applied and the measurement temperature, it is possible to collect the frequency characteristics with a constant temperature, or to collect the temperature characteristics by applying a constant frequency.
　本発明においては、損失係数は、動的粘弾性測定装置（例えば、ユービーエム社製、商品名「Ｒｈｅｏｇｅｌ－Ｅ４０００」）で、測定される貯蔵引張弾性率（Ｅ’）と、損失引張弾性率（Ｅ’’）の比（Ｅ’／Ｅ’’）から求めることができる。温度２３℃における周波数４００～９００Ｈｚでの損失係数の最小値は、温度を２３℃に固定し、試験片に周波数４００～９００Ｈｚの範囲内で引張応力を印加することにより、その応答から求めることができる。また温度１５～４０℃で周波数６５０Ｈｚにおける損失係数の最小値は、試験片に周波数を６５０Ｈｚに固定した引張応力を温度１５～４０℃で印加し、その応答から求めることができる。 In the present invention, the loss coefficient is the storage tensile elastic modulus (E ′) measured with a dynamic viscoelasticity measuring apparatus (for example, trade name “Rheogel-E4000” manufactured by UBM) and the loss tensile elastic modulus. It can be obtained from the ratio (E ′ / E ″) of (E ″). The minimum value of the loss coefficient at a frequency of 400 to 900 Hz at a temperature of 23 ° C. can be obtained from the response by fixing the temperature at 23 ° C. and applying a tensile stress to the test piece within a frequency range of 400 to 900 Hz. it can. Further, the minimum value of the loss coefficient at a temperature of 15 to 40 ° C. and a frequency of 650 Hz can be obtained from the response when a tensile stress with a frequency fixed at 650 Hz is applied to the test piece at a temperature of 15 to 40 ° C.
　チッピングは、ダイシング時のブレードと呼ばれる回転刃により引き起こされるものであるが、その原因について本発明者等が検討したところ、ウエハ貼着用粘着シートにより、ダイシング時に発生したチップの振動を減衰させることができれば、チッピングを小さくすることができることを見出し、鋭意検討した結果、動的粘弾性測定装置によりフィルム状で測定した特定条件における損失係数を特定の値以上としたウエハ貼着用粘着シートにより、本発明を完成するに至った。
　ブレードによるダイシング時には、回転するブレードとウエハとの接触により発熱する。ブレードの回転数は通常、２５０００～５５０００ｒｐｍであり、その値を周波数に換算すると４００～９００Ｈｚとなる。通常発熱を抑制するために、ダイシング時には１５～２５℃の冷却水がその接触部分に流され、ウエハ貼着用粘着シートはほぼ一定温度（例えば、２３℃）で保たれる。温度２３℃で周波数４００～９００Ｈｚにおける損失係数の最小値が０．２０以上とすることにより、ダイシング時に発生したチップの振動を減衰させ、チッピングを防ぐことができる。 Chipping is caused by a rotating blade called a blade at the time of dicing, and the present inventors have examined the cause of the chipping, and the chip sticking generated at the time of dicing can be attenuated by the adhesive sheet attached to the wafer. As a result of finding out that chipping can be reduced if possible, and as a result of intensive studies, the present invention provides an adhesive sheet for sticking a wafer with a loss coefficient under a specific condition measured in a film shape by a dynamic viscoelasticity measuring device that exceeds a specific value. It came to complete.
When dicing with a blade, heat is generated by contact between the rotating blade and the wafer. The rotation speed of the blade is usually 25000 to 55000 rpm, and the value is converted to a frequency of 400 to 900 Hz. In order to suppress normal heat generation, cooling water of 15 to 25 ° C. is flowed to the contact portion during dicing, and the adhesive sheet for adhering the wafer is kept at a substantially constant temperature (for example, 23 ° C.). By setting the minimum loss coefficient at a temperature of 23 ° C. and a frequency of 400 to 900 Hz to 0.20 or more, chip vibration generated during dicing can be attenuated and chipping can be prevented.
　また部分的にウエハ貼着用粘着シートは冷却の過不足により、例えば温度１５～４０℃で、回転するブレードとウエハおよびウエハ貼着用粘着シートとの接触が行われる場合がある。そこで温度１５～４０℃で周波数６５０Ｈｚにおける損失係数の最小値が０．２０以上とすることにより、ダイシング時に発生したチップの振動を減衰させ、チッピングを防ぐことができる。
　ウエハ貼着用粘着シートの損失係数は０．２０以上、好ましくは０．２２以上である。損失係数が小さすぎるとダイシングブレードによる振動を低減できず、チッピングを防ぎにくくなる。通常、ウエハ貼着用粘着シートの損失係数は０．４０以下である。 In addition, the adhesive sheet for adhering a wafer may be brought into contact with the rotating blade, the wafer, and the adhesive sheet for adhering a wafer, for example, at a temperature of 15 to 40 ° C. due to excessive or insufficient cooling. Therefore, by setting the minimum value of the loss coefficient at a temperature of 15 to 40 ° C. and a frequency of 650 Hz to 0.20 or more, chip vibration generated during dicing can be attenuated and chipping can be prevented.
The loss factor of the pressure-sensitive adhesive sheet to be attached to the wafer is 0.20 or more, preferably 0.22 or more. If the loss factor is too small, vibration due to the dicing blade cannot be reduced, and chipping is difficult to prevent. Usually, the loss coefficient of the pressure-sensitive adhesive sheet to be attached to a wafer is 0.40 or less.
　本発明のウエハ貼着用粘着シートにおいては、基材樹脂フィルムの５％モジュラスが４．０～７．０ＭＰａであり、かつ引き裂き強さが１００Ｎ／ｍｍ以上であることが好ましい。基材樹脂フィルムの５％モジュラスは、ＪＩＳ　Ｋ　７１２７／２／３００に従い、５％歪み時の応力を測定することにより得られる。基材樹脂フィルムの５％モジュラスと引き裂き強さがこの範囲内のものは、エキスパンド工程において十分に引張応力を印加しても、基材樹脂フィルムに引き裂きが生じることなく、均一にチップ間隔を拡張することができる。
　基材樹脂フィルムの５％モジュラスが大きすぎると、本発明のウエハ貼着用粘着シートは、図４に示すチップ１４間の間隔を拡張するエキスパンド工程において、十分にチップ間隔を拡張できず、ピックアップ不良が生ずることがある。基材樹脂フィルムの５％モジュラスが小さすぎると、低応力でウエハ貼着用粘着シートが伸びて、取扱いに支障を生じることがある。基材樹脂フィルムの５％モジュラスは好ましくは４．５～６．５ＭＰａ、さらに好ましくは５．０～６．５ＭＰａである。
　エキスパンド工程において、チップ間の間隔を均一に拡張できるためには、本発明のウエハ貼着用粘着シートの基材樹脂フィルムのＭＤ方向とＴＤ方向の５％モジュラスが４．０～７．０ＭＰａであることが好ましい。 In the adhesive sheet for sticking a wafer of the present invention, it is preferable that the 5% modulus of the base resin film is 4.0 to 7.0 MPa and the tear strength is 100 N / mm or more. The 5% modulus of the base resin film can be obtained by measuring the stress at 5% strain according to JIS K 7127/2/300. If the base resin film has a 5% modulus and tear strength within this range, even if sufficient tensile stress is applied in the expanding process, the base resin film will not tear and the chip spacing will be expanded evenly. can do.
If the 5% modulus of the base resin film is too large, the adhesive sheet for adhering to a wafer of the present invention cannot sufficiently expand the chip interval in the expanding process for expanding the interval between the chips 14 shown in FIG. May occur. If the 5% modulus of the base resin film is too small, the pressure-sensitive adhesive sheet for wafer sticking may be stretched with low stress, which may hinder handling. The 5% modulus of the base resin film is preferably 4.5 to 6.5 MPa, more preferably 5.0 to 6.5 MPa.
In the expanding process, in order to be able to uniformly extend the distance between chips, the 5% modulus in the MD direction and the TD direction of the base resin film of the adhesive sheet for wafer sticking of the present invention is 4.0 to 7.0 MPa. It is preferable.
　本発明のウエハ貼着用粘着シートにおいては、基材樹脂フィルムの引き裂き強さは１００Ｎ／ｍｍ以上である。基材樹脂フィルムの引き裂き強さは、ＪＩＳ　Ｋ７１２８－３に従うことにより得られる。基材樹脂フィルムの引き裂き強さが１００Ｎ／ｍｍ未満のウェハ貼着用粘着シートは、エキスパンド工程で破断してしまう場合がある。基材樹脂フィルムの引き裂き強さは大きいほど引き裂かれてしまうことはないが、通常、１５０Ｎ／ｍｍ以下であれば、十分使用することができる。基材樹脂フィルムの引き裂き強さは好ましくは１１０Ｎ／ｍｍ以上、さらに好ましくは１１５Ｎ／ｍｍ以上である。
　また図４に示すエキスパンダー１６により、エキスパンド工程が行われる場合に、本発明のウエハ貼着用粘着シートの基材樹脂フィルムのＭＤ方向とＴＤ方向の基材樹脂フィルムの引き裂き強さは１００Ｎ／ｍｍ以上であることが好ましい。 In the adhesive sheet for sticking a wafer of the present invention, the tear strength of the base resin film is 100 N / mm or more. The tear strength of the base resin film can be obtained according to JIS K7128-3. The adhesive sheet for affixing a wafer having a tear strength of the base resin film of less than 100 N / mm may be broken in the expanding step. The larger the tear strength of the base resin film, the more it will not be torn. However, it is usually sufficient if it is 150 N / mm or less. The tear strength of the base resin film is preferably 110 N / mm or more, more preferably 115 N / mm or more.
When the expanding process is performed by the expander 16 shown in FIG. 4, the tear strength of the base resin film in the MD direction and the TD direction of the base resin film of the adhesive sheet for wafer sticking of the present invention is 100 N / mm or more. It is preferable that
　基材樹脂フィルムには、ダイシング工程でのブレードによるウエハの切断に対する耐熱性に優れているものであれば特に制限なく使用することができる。本発明においては、基材樹脂フィルムの樹脂には、プラスチック、熱可塑性エラストマー、ゴムなどシート状に成形できるものを含むものとする。この樹脂として例えば、スチレン－水添イソプレン－スチレンブロック共重合体（以下、「ＳＥＰＳ」という）、スチレン－イソプレン－スチレン共重合体（以下、「ＳＩＳ」という）、スチレン－水添ブタジエン－スチレン共重合体（以下、「ＳＥＢＳ」という）およびスチレン－水添イソプレン／ブタジエン－スチレン共重合体（以下、「ＳＥＥＰＳ」という）から選ばれた少なくとも１種を挙げることができる。基材樹脂フィルム１は単層でも複層でもよく、複層の場合は異なる材料でも、同一の材料でもよいが、基材樹脂フィルム１を構成する層のうち少なくとも１層が、上記のＳＥＰＳ、ＳＩＳ、ＳＥＢＳ、ＳＥＥＰＳから選ばれた少なくとも１種を含有することが好ましい。このＳＥＰＳ、ＳＩＳ、ＳＥＢＳ、ＳＥＥＰＳから選ばれた少なくとも１種からなる層は、積層して組み合わせて用いることもできる。 The base resin film can be used without particular limitation as long as it has excellent heat resistance against cutting of the wafer with a blade in the dicing process. In the present invention, the resin of the base resin film includes those that can be formed into a sheet shape, such as plastic, thermoplastic elastomer, and rubber. Examples of this resin include styrene-hydrogenated isoprene-styrene block copolymer (hereinafter referred to as “SEPS”), styrene-isoprene-styrene copolymer (hereinafter referred to as “SIS”), styrene-hydrogenated butadiene-styrene copolymer. Examples thereof include at least one selected from a polymer (hereinafter referred to as “SEBS”) and a styrene-hydrogenated isoprene / butadiene-styrene copolymer (hereinafter referred to as “SEEPS”). The base resin film 1 may be a single layer or multiple layers. In the case of multiple layers, different materials or the same material may be used, but at least one of the layers constituting the base resin film 1 is the above SEPS, It is preferable to contain at least one selected from SIS, SEBS, and SEEPS. The layers composed of at least one selected from SEPS, SIS, SEBS, and SEEPS can be laminated and used in combination.
　上記のＳＥＰＳ、ＳＩＳ、ＳＥＢＳ、ＳＥＥＰＳから選ばれた少なくとも１種からなる層には、ポリプロピレン、低密度ポリエチレン（ＬＤＰＥ）、直鎖低密度ポリエチレン（ＬＬＤＰＥ）、エチレン・プロピレン共重合体、プロピレン共重合体、エチレン－プロピレン－ジエン共重合体加硫物、ポリブテン、ポリブタジエン、ポリメチルペンテン、エチレン－酢酸ビニル共重合体、エチレン－（メタ）アクリル酸共重合体、エチレン－（メタ）アクリル酸メチル共重合体、エチレン－（メタ）アクリル酸エチル共重合体、ポリ塩化ビニル、塩化ビニル－酢酸ビニル共重合体、エチレン－塩化ビニル－酢酸ビニル共重合体、ポリウレタン、ポリアミド、アイオノマー、ニトリルゴム、ブチルゴム、スチレンイソプレンゴム、スチレンブタジエンゴム、天然ゴムおよびその水添加物または変性物等などを配合した樹脂組成物とすることができる。
　本発明において、アイオノマーとしては、エチレン－メタクリル酸共重合体やエチレン－アクリル酸共重合体の分子間を、ナトリウムや亜鉛などの金属イオンで分子間結合した樹脂をいう。金属イオンとしては、亜鉛が好ましい。
　基材樹脂フィルムを構成する層のうち少なくとも１層は、（Ａ）成分としてポリプロピレン樹脂と、（Ｂ）成分としてスチレン－水添イソプレン－スチレンブロック共重合体、スチレン－イソプレン－スチレン共重合体、スチレン－水添ブタジエン－スチレン共重合体およびスチレン－水添イソプレン－ブタジエン－スチレン共重合体から選ばれた少なくとも１種を含有する樹脂組成物とすることが好ましい。この場合のポリプロピレン樹脂は、プロピレンの単独重合体、エチレン－プロピレン共重合体、エチレン－プロピレン－ジエン共重合体加硫物やその他のプロピレン共重合体等を含み、共重合体の場合はランダム共重合体、ブロック共重合体のいずれでもよく、適宜選択される。 The layer comprising at least one selected from the above SEPS, SIS, SEBS, and SEEPS includes polypropylene, low density polyethylene (LDPE), linear low density polyethylene (LLDPE), ethylene / propylene copolymer, propylene copolymer Polymer, Ethylene-propylene-diene copolymer vulcanizate, polybutene, polybutadiene, polymethylpentene, ethylene-vinyl acetate copolymer, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid methyl copolymer Polymer, ethylene- (meth) acrylate copolymer, polyvinyl chloride, vinyl chloride-vinyl acetate copolymer, ethylene-vinyl chloride-vinyl acetate copolymer, polyurethane, polyamide, ionomer, nitrile rubber, butyl rubber, Styrene isoprene rubber, styrene butadiene Rubber may be natural rubber and its hydrogenated product or a modified product such as a resin composition containing such.
In the present invention, the ionomer refers to a resin in which molecules of an ethylene-methacrylic acid copolymer or ethylene-acrylic acid copolymer are intermolecularly bonded with a metal ion such as sodium or zinc. Zinc is preferred as the metal ion.
At least one of the layers constituting the base resin film is a polypropylene resin as the component (A), a styrene-hydrogenated isoprene-styrene block copolymer, a styrene-isoprene-styrene copolymer as the component (B), A resin composition containing at least one selected from a styrene-hydrogenated butadiene-styrene copolymer and a styrene-hydrogenated isoprene-butadiene-styrene copolymer is preferable. The polypropylene resin in this case includes a propylene homopolymer, an ethylene-propylene copolymer, an ethylene-propylene-diene copolymer vulcanizate, other propylene copolymers, and the like. Either a polymer or a block copolymer may be used and is appropriately selected.
　本発明において、（Ａ）成分のポリプロピレン樹脂と、（Ｂ）成分のＳＥＰＳ、ＳＩＳ、ＳＥＢＳおよびＳＥＥＰＳから選ばれた少なくとも１種との配合量は、フィルム強度と制振性のバランスを考慮して適宜決定できる。
　（Ａ）成分のポリプロピレン樹脂１００質量部に対して、（Ｂ）成分のＳＥＰＳ、ＳＩＳ、ＳＥＢＳおよびＳＥＥＰＳから選ばれた少なくとも１種を３０～１００質量部とすることが好ましい。（Ａ）成分１００質量部に対して、（Ｂ）成分のＳＥＰＳ、ＳＩＳ、ＳＥＢＳおよびＳＥＥＰＳから選ばれた少なくとも１種が少なすぎる場合は、十分な制振性が得られず、チッピング抑制効果が小さい場合がある。また、（Ａ）成分１００質量部に対して、（Ｂ）成分のＳＥＰＳ、ＳＩＳ、ＳＥＢＳおよびＳＥＥＰＳから選ばれた少なくとも１種が多すぎる場合は、フィルム自体が軟らかくなりすぎ、取扱いに支障が生じる。 In the present invention, the blending amount of the polypropylene resin of component (A) and at least one selected from SEPS, SIS, SEBS and SEEPS of component (B) takes into consideration the balance between film strength and vibration damping properties. It can be determined as appropriate.
It is preferable that at least one selected from SEPS, SIS, SEBS and SEEPS of component (B) is 30 to 100 parts by mass with respect to 100 parts by mass of component (A) polypropylene resin. When the amount of at least one selected from SEPS, SIS, SEBS and SEEPS of the component (B) is too small relative to 100 parts by mass of the component (A), sufficient vibration damping properties cannot be obtained, and the chipping suppressing effect is obtained. It may be small. Moreover, when there are too many at least 1 sort (s) selected from SEPS, SIS, SEBS, and SEEPS of (B) component with respect to 100 mass parts of (A) component, the film itself becomes too soft and troubles arise in handling. .
　（Ａ）成分としてポリプロピレン樹脂と、（Ｂ）成分としてスチレン－水添イソプレン－スチレンブロック共重合体、スチレン－イソプレン－スチレン共重合体、スチレン－水添ブタジエン－スチレン共重合体およびスチレン－水添イソプレン－ブタジエン－スチレン共重合体から選ばれた少なくとも１種を含有する場合、（Ａ）成分を連続相とし、（Ｂ）成分を分散相とし、当該分散相粒子の平均直径が１５ｎｍ以上の樹脂分散体であることが好ましい。この分散相の粒子の上限には特に制限はないが、大きすぎると、局所的にフィルム強度がばらつく場合があり、好ましくは２５ｎｍ以下である。
　（Ａ）成分を連続相とし、（Ｂ）成分を分散相とした樹脂分散体において、応力印加時における引張りもしくはその復元過程で、（Ｂ）成分同士の分子鎖もしくは側鎖の衝突により、エネルギー損失を生じる。（Ｂ）成分の分散相の平均直径が小さすぎる場合には、隣接する分子鎖が少ないため、チッピング抑制するためのエネルギー損失が十分に得られず、ダイシング時に発生したチップの振動を減衰させにくい場合がある。 Polypropylene resin as component (A) and styrene-hydrogenated isoprene-styrene block copolymer, styrene-isoprene-styrene copolymer, styrene-hydrogenated butadiene-styrene copolymer and styrene-hydrogenated as component (B) In the case of containing at least one selected from isoprene-butadiene-styrene copolymer, resin (A) is a continuous phase, component (B) is a dispersed phase, and the average diameter of the dispersed phase particles is 15 nm or more. A dispersion is preferred. The upper limit of the particles of the dispersed phase is not particularly limited, but if it is too large, the film strength may locally vary, and is preferably 25 nm or less.
In a resin dispersion in which the component (A) is a continuous phase and the component (B) is a dispersed phase, energy is applied due to the collision of molecular chains or side chains between the components (B) in the process of pulling or restoring during stress application. Cause loss. When the average diameter of the dispersed phase of component (B) is too small, there are few adjacent molecular chains, so that sufficient energy loss for suppressing chipping cannot be obtained, and it is difficult to attenuate the chip vibration generated during dicing. There is a case.
　基材樹脂フィルムの粘着剤層と接する面には密着性を向上するために、コロナ処理を施したり、プライマー等の他の層を設けてもよい。基材樹脂フィルム１の厚さは特に制限されないが、好ましくは３０～２００μｍ、特に好ましくは５０～１００μｍである。
　また、基材樹脂フィルム１が複層で構成される場合には、上記ＳＥＰＳ、ＳＩＳ、ＳＥＢＳ又はＳＥＥＰＳ含有層の厚さは５～１００μｍであることが好ましい。 In order to improve adhesion, the surface of the base resin film that contacts the pressure-sensitive adhesive layer may be subjected to corona treatment or may be provided with other layers such as a primer. The thickness of the base resin film 1 is not particularly limited, but is preferably 30 to 200 μm, particularly preferably 50 to 100 μm.
When the base resin film 1 is composed of a plurality of layers, the thickness of the SEPS, SIS, SEBS or SEEPS-containing layer is preferably 5 to 100 μm.
　粘着剤層は、種々の粘着剤により形成され得る。このような粘着剤に使用される樹脂成分としては、何ら限定されるものではない。例えば、天然ゴムや各種の合成ゴムなどのゴム系ポリマー、アクリル系、シリコーン系、ポリビニルエーテル系等をベースポリマーとした粘着剤が用いられる。この中でも、アクリル系ポリマー、例えば、ポリ（メタ）アクリル酸アルキルエステル、（メタ）アクリル酸アルキルエステルとこれと共重合可能な他の不飽和単量体との共重合体を使用することが好ましい。 The pressure-sensitive adhesive layer can be formed of various pressure-sensitive adhesives. The resin component used in such an adhesive is not limited at all. For example, an adhesive having a base polymer such as a rubber polymer such as natural rubber or various synthetic rubbers, an acrylic polymer, a silicone polymer, or a polyvinyl ether polymer is used. Among these, it is preferable to use acrylic polymers such as poly (meth) acrylic acid alkyl esters, copolymers of (meth) acrylic acid alkyl esters and other unsaturated monomers copolymerizable therewith. .
　これらの樹脂成分に凝集力を付加するために架橋剤を配合することができる。
　該架橋剤としては、樹脂成分中の官能基に対応して、この官能基と反応可能な官能基を有する架橋剤を適宜選択することにより、粘着剤に凝集力を付与するとともに、初期の粘着力を所望の値に設定することができる。架橋剤としては、例えば、イソシアネート系架橋剤、エポキシ系架橋剤、金属キレート系架橋剤、アジリジン系架橋剤、アミン樹脂などが挙げられる。
　汎用性の点から、架橋剤としては、イソシアネート系架橋剤が好ましい。具体的には、多価イソシアネート化合物、例えば、２，４－トリレンジイソシアネート、２，６－トリレンジイソシアネート、１，３－キシリレンジイソシアネート、１，４－キシレンジイソシアネート、ジフェニルメタン－４，４’－ジイソシアネート、ジフェニルメタン－２，４’－ジイソシアネート、３－メチルジフェニルメタンジイソシアネート、ヘキサメチレンジイソシアネート、イソホロンジイソシアネート、ジシクロヘキシルメタン－４，４’－ジイソシアネート、ジシクロヘキシルメタン－２，４’－ジイソシアネート、リジンイソシアネートなどが用いられる。
　さらに粘着剤には、本発明の目的が損なわれない範囲で、所望により、各種添加成分を含有させることができる。 In order to add cohesive force to these resin components, a crosslinking agent can be blended.
As the cross-linking agent, by appropriately selecting a cross-linking agent having a functional group capable of reacting with the functional group corresponding to the functional group in the resin component, the cohesive force is imparted to the pressure-sensitive adhesive and the initial pressure-sensitive adhesive is used. The force can be set to a desired value. Examples of the crosslinking agent include isocyanate crosslinking agents, epoxy crosslinking agents, metal chelate crosslinking agents, aziridine crosslinking agents, and amine resins.
From the viewpoint of versatility, an isocyanate-based crosslinking agent is preferable as the crosslinking agent. Specifically, polyvalent isocyanate compounds such as 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylene diisocyanate, diphenylmethane-4,4′- Diisocyanate, diphenylmethane-2,4′-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4′-diisocyanate, dicyclohexylmethane-2,4′-diisocyanate, lysine isocyanate, etc. are used. .
Further, the pressure-sensitive adhesive can contain various additive components as desired within the range in which the object of the present invention is not impaired.
　粘着剤として、放射線硬化型や加熱発泡型の粘着剤を用いることができる。放射線硬化型の粘着剤としては、紫外線、電子線等で硬化し、剥離時には剥離しやすくなる粘着剤を使用することができ、加熱発泡型の粘着剤とは、加熱により発泡剤や膨張剤により剥離しやすくなる粘着剤を使用することができる。放射線硬化型粘着剤としては、たとえば、特公平１－５６１１２号公報、特開平７－１３５１８９号公報等に記載のものが好ましく使用されるが、これらに限定されることはない。
　本発明においては、紫外線硬化型粘着剤を用いることが好ましい。その場合には、放射線により硬化し三次元網状化する性質を有すればよく、例えば通常のゴム系あるいはアクリル系の感圧性の樹脂成分に対して、分子中に少なくとも２個の光重合性炭素－炭素二重結合を有する低分子量の光重合性化合物（以下、光重合性化合物という）および光重合開始剤を配合することができる。 As the pressure-sensitive adhesive, a radiation curable or heat-foamed pressure-sensitive adhesive can be used. As the radiation curable adhesive, it is possible to use an adhesive that is cured by ultraviolet rays, electron beams, etc., and easily peels off at the time of peeling. An adhesive that easily peels can be used. As the radiation curable pressure-sensitive adhesive, for example, those described in JP-B-1-56112, JP-A-7-135189 and the like are preferably used, but are not limited thereto.
In the present invention, it is preferable to use an ultraviolet curable adhesive. In that case, it is only necessary to have a property of being cured by radiation to form a three-dimensional network. For example, at least two photopolymerizable carbons in the molecule for a normal rubber-based or acrylic pressure-sensitive resin component. -A low molecular weight photopolymerizable compound having a carbon double bond (hereinafter referred to as a photopolymerizable compound) and a photopolymerization initiator can be blended.
　光重合性化合物としては、たとえば、トリメチロールプロパントリアクリレート、テトラメチロールメタンテトラアクリレート、ペンタエリスリトールトリアクリレート、ペンタエリスリトールテトラアクリレート、ジペンタエリスリトールモノヒドロキシペンタアクリレート、ジペンタエリスリトールヘキサアクリレート、１，４－ブチレングリコールジアクリレート、１，６－ヘキサンジオールジアクリレート、ポリエチレングリコールジアクリレート、オルガノポリシロキサン組成物、市販のオリゴエステルアクリレート、ウレタンアクリレートなどが挙げられる。 Examples of the photopolymerizable compound include trimethylolpropane triacrylate, tetramethylolmethane tetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butylene. Examples include glycol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, organopolysiloxane composition, commercially available oligoester acrylate, and urethane acrylate.
　粘着剤を構成する樹脂成分として、光硬化性炭素－炭素二重結合を有するものを使用してもよい。例えば、主鎖の繰り返し単位に対して光硬化性炭素－炭素二重結合を有し、かつ官能基を有するアクリル系共重合体及び／又はメタクリル系共重合体（ａ１）と、該官能基と反応し得る官能基をもつ化合物（ａ２）とを反応させて得たものを挙げることができる。前記の主鎖の繰り返し単位に対して放射線硬化性炭素－炭素二重結合を有し、かつ官能基を有するアクリル系共重合体及び／又はメタクリル系共重合体（ａ１）は、例えば、放射線硬化性炭素－炭素二重結合を有するアクリル酸アルキルエステル及び／又はメタクリル酸アルキルエステルなどの単量体（ａ１－１）と、官能基を有する単量体（ａ１－２）とを共重合させて得ることができる。 As the resin component constituting the pressure-sensitive adhesive, one having a photocurable carbon-carbon double bond may be used. For example, an acrylic copolymer and / or a methacrylic copolymer (a1) having a photocurable carbon-carbon double bond with respect to a repeating unit of the main chain and having a functional group, and the functional group The thing obtained by making it react with the compound (a2) which has a functional group which can react can be mentioned. The acrylic copolymer and / or methacrylic copolymer (a1) having a radiation curable carbon-carbon double bond and a functional group with respect to the repeating unit of the main chain is, for example, radiation curing. A monomer (a1-1) such as an alkyl acrylate and / or alkyl methacrylate having a functional carbon-carbon double bond and a monomer (a1-2) having a functional group are copolymerized. Obtainable.
　単量体（ａ１－１）としては、例えば、アルキルエステルのアルキル基の炭素数が６～１２の（メタ）アクリル酸アルキルエステル（例えば、ヘキシルアクリレート、ｎ－オクチルアクリレート、イソオクチルアクリレート、２－エチルヘキシルアクリレート、ドデシルアクリレート、デシルアクリレート）を挙げることができる。また、アルキルエステルのアルキル基の炭素数が５以下の（メタ）アクリル酸アルキルエステル（例えば、ペンチルアクリレート、ｎ－ブチルアクリレート、イソブチルアクリレート、エチルアクリレート、メチルアクリレート、またはこれらと同様のメタクリレートなど）を挙げることができる。 As the monomer (a1-1), for example, a (meth) acrylic acid alkyl ester having 6 to 12 carbon atoms in the alkyl group of the alkyl ester (eg, hexyl acrylate, n-octyl acrylate, isooctyl acrylate, 2- Ethyl hexyl acrylate, dodecyl acrylate, decyl acrylate). In addition, (meth) acrylic acid alkyl ester having 5 or less carbon atoms in the alkyl group of the alkyl ester (for example, pentyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, methyl acrylate, or similar methacrylates) Can be mentioned.
　単量体（ａ１－２）が有する官能基としては、カルボキシル基、水酸基、アミノ基、環状酸無水基、エポキシ基、イソシアネート基などを挙げることができる。単量体（ａ１－－２）の具体例としては、例えば、アクリル酸、メタクリル酸、けい皮酸、イタコン酸、フマル酸、フタル酸、２－ヒドロキシアルキルアクリレート類、２－ヒドロキシアルキルメタクリレート類、グリコールモノアクリレート類、グリコールモノメタクリレート類、Ｎ－メチロールアクリルアミド、Ｎ－メチロールメタクリルアミド、アリルアルコール、Ｎ－アルキルアミノエチルアクリレート類、Ｎ－アルキルアミノエチルメタクリレート類、アクリルアミド類、メタクリルアミド類、無水マレイン酸、無水イタコン酸、無水フマル酸、無水フタル酸、グリシジルアクリレート、グリシジルメタクリレート、アリルグリシジルエーテル、ポリイソシアネート化合物のイソシアネート基の一部を水酸基またはカルボキシル基および放射線硬化性炭素－炭素二重結合を有する単量体でウレタン化したものなどを列挙することができる。 Examples of the functional group possessed by the monomer (a1-2) include a carboxyl group, a hydroxyl group, an amino group, a cyclic acid anhydride group, an epoxy group, and an isocyanate group. Specific examples of the monomer (a1-2) include, for example, acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, Glycol monoacrylates, glycol monomethacrylates, N-methylolacrylamide, N-methylolmethacrylamide, allyl alcohol, N-alkylaminoethyl acrylates, N-alkylaminoethyl methacrylates, acrylamides, methacrylamides, maleic anhydride Itaconic anhydride, fumaric anhydride, phthalic anhydride, glycidyl acrylate, glycidyl methacrylate, allyl glycidyl ether, a part of isocyanate group of polyisocyanate compound is hydroxyl group or carboxyl group And radiation-curable carbon - can enumerate such as those urethanization a monomer having a carbon-carbon double bond.
　前記（ａ２）の官能基がカルボキシル基や環状酸無水基の場合は、（ａ１）の有する官能基としては、例えば、水酸基、エポキシ基、イソシアネート基などを挙げることができる。また（ａ２）の官能基が水酸基の場合は、（ａ１）の有する官能基としては、例えば、環状酸無水基、イソシアネート基などを挙げることができる。（ａ２）の官能基がアミノ基の場合は、（ａ１）の有する官能基としては、エポキシ基、イソシアネート基などを挙げることができる。（ａ２）の官能基がエポキシ基である場合には、（ａ１）の有する官能基としては、例えば、カルボキシル基、環状酸無水基、アミノ基などを挙げることができる。 When the functional group (a2) is a carboxyl group or a cyclic acid anhydride group, examples of the functional group (a1) include a hydroxyl group, an epoxy group, and an isocyanate group. When the functional group (a2) is a hydroxyl group, examples of the functional group (a1) include a cyclic acid anhydride group and an isocyanate group. When the functional group (a2) is an amino group, examples of the functional group (a1) include an epoxy group and an isocyanate group. When the functional group of (a2) is an epoxy group, examples of the functional group of (a1) include a carboxyl group, a cyclic acid anhydride group, and an amino group.
　紫外線硬化型粘着剤の場合には、粘着剤中に光重合開始剤を混入することにより、紫外線照射による重合硬化時間ならびに紫外線照射量を少なくなることができる。
　このような光重合開始剤としては、具体的には、ベンゾイン、ベンゾインメチルエーテル、ベンゾインエチルエーテル、ベンゾインイソプロピルエーテル、ベンジルジフェニルサルファイド、テトラメチルチウラムモノサルファイド、アゾビスイソブチロニトリル、ジベンジル、ジアセチル、β－クロールアンスラキノンなどが挙げられる。
　粘着剤層の厚さは特に制限されないが、好ましくは４～３０μｍ、特に好ましくは５～２５μｍである。 In the case of an ultraviolet curable pressure-sensitive adhesive, by mixing a photopolymerization initiator in the pressure-sensitive adhesive, it is possible to reduce the polymerization curing time and the amount of ultraviolet irradiation by ultraviolet irradiation.
Specific examples of such a photopolymerization initiator include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzyldiphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, dibenzyl, diacetyl, β-chloranthraquinone and the like can be mentioned.
The thickness of the pressure-sensitive adhesive layer is not particularly limited, but is preferably 4 to 30 μm, particularly preferably 5 to 25 μm.
　本発明のウエハ貼着用粘着シートは、粘着剤層上に、さらに接着剤層を設けずにダイシングテープとして使用することができる。また、本発明の粘着剤層がダイシングダイボンディング兼用可能な粘着剤の場合には、ダイシングダイボンドテープとして使用することができる。この場合は、ダイシング工程終了後に、粘着剤層は基材樹脂フィルムとの間で剥離され、チップに粘着剤層が付着したものを用いて、その後ダイレクトボンディングが可能となる。
　また、本発明のウエハ貼着用粘着シートは、粘着剤層上の少なくともウエハ貼着予定部分に、接着剤層が積層されたものでもよい。その場合、接着剤層にウエハを貼着しダイシングした後、得られたチップをピックアップする際に、接着剤層はチップに付着し、チップを基板やリードフレームに固定する際の接着剤として使用される。接着剤層は、ダイシングダイボンドシートに一般的に使用されるフィルム状接着剤を使用することができ、アクリル系粘接着剤、エポキシ樹脂／フェノール樹脂／アクリル樹脂のブレンド系粘接着剤等を好ましく使用することができる。その厚さは適宜設定してよいが、５～１００μｍ程度が好ましい。
　接着剤層を構成する樹脂組成物は、常温でウエハに貼合できダイシング加工できるような粘着性を有するとともに、ダイシング加工が終了した後に粘着剤層から剥離でき、その後加熱することにより接着性が発現し、ダイボンド剤として作用する。この際の加熱は、特に制限するものではないが、好ましくは４０～１００℃、より好ましくは６０～８０℃で行う。 The pressure-sensitive adhesive sheet for sticking a wafer of the present invention can be used as a dicing tape without further providing an adhesive layer on the pressure-sensitive adhesive layer. When the pressure-sensitive adhesive layer of the present invention is a pressure-sensitive adhesive that can also be used for dicing die bonding, it can be used as a dicing die-bonding tape. In this case, after completion of the dicing step, the pressure-sensitive adhesive layer is peeled off from the base resin film, and direct bonding can be performed thereafter using the chip having the pressure-sensitive adhesive layer attached to the chip.
The pressure-sensitive adhesive sheet for wafer sticking of the present invention may be one in which an adhesive layer is laminated at least on the part to be stuck to the wafer on the pressure-sensitive adhesive layer. In that case, after sticking the wafer to the adhesive layer and dicing, when picking up the obtained chip, the adhesive layer adheres to the chip and is used as an adhesive when fixing the chip to the substrate or lead frame Is done. For the adhesive layer, a film-like adhesive generally used for dicing die-bonding sheets can be used, such as an acrylic adhesive, an epoxy resin / phenolic resin / acrylic resin blend adhesive, and the like. It can be preferably used. The thickness may be appropriately set, but is preferably about 5 to 100 μm.
The resin composition constituting the adhesive layer has such adhesiveness that it can be bonded to a wafer at normal temperature and can be diced, and can be peeled off from the adhesive layer after the dicing is completed, and then the adhesive property is obtained by heating. Appears and acts as a die bond agent. The heating at this time is not particularly limited, but is preferably performed at 40 to 100 ° C., more preferably at 60 to 80 ° C.
　本発明のウエハ貼着用粘着シートにウエハを貼合し、図２～５に示すようなウエハのダイシングおよびピックアップを行うことができる。本発明のウエハ貼着用粘着シートを用いたウエハの加工方法においては、基材樹脂フィルムまで切り込みを行わないことが、ダイシングブレードの切削抵抗を低減し、ウエハ切削をスムーズにし、チッピングを低減するため、好ましい。さらに好ましくは、粘着剤層の厚さの２／３程度まで最大限切り込みを行うようにすることが好ましい。切り込みが基材樹脂フィルムまで達しないためには、例えば、用いるダイシング装置の切り込み深さの設定を、マニュアルに従い適宜変更すれば良い。 The wafer can be bonded to the adhesive sheet for sticking a wafer of the present invention, and the wafer can be diced and picked up as shown in FIGS. In the wafer processing method using the adhesive sheet for adhering a wafer according to the present invention, not cutting up to the base resin film reduces cutting resistance of the dicing blade, smoothes wafer cutting, and reduces chipping. ,preferable. More preferably, it is preferable to perform the maximum cutting up to about 2/3 of the thickness of the pressure-sensitive adhesive layer. In order to prevent the cutting from reaching the base resin film, for example, the setting of the cutting depth of the dicing apparatus to be used may be appropriately changed according to the manual.
　本発明に用いられるベアウエハは、特に限定されるものではなく、従来用いられている任意のベアウエハから適宜選択して用いることができる。 The bare wafer used in the present invention is not particularly limited, and can be appropriately selected from any conventionally used bare wafers.
　以下、本発明を実施例に基づきさらに詳細に説明するが、本発明はこれら実施例に限定されるものではない。なお、実施例および比較例で用いた粘着剤、基材構成樹脂は以下のとおりである。 Hereinafter, the present invention will be described in more detail based on examples, but the present invention is not limited to these examples. In addition, the adhesive and base material constituent resin used in Examples and Comparative Examples are as follows.
（粘着剤組成物１）
　アクリル系ベースポリマー（２－エチルヘキシルアクリレート、メチルアクリレート及び２－ヒドロキシエチルアクリレートからなる共重合体、重量平均分子量２０万、ガラス転移点＝－３５℃）１００質量部にイソシアネート系架橋剤（日本ポリウレタン社製、商品名コロネートＬ）３質量部、光重合性化合物としてテトラメチロールメタンテトラアクリレート１０質量部、光重合開始剤としてα－ヒドロキシシクロヘキシルフェニルケトン１質量部を添加し、混合して、粘着剤組成物１を得た。 (Adhesive composition 1)
Isocyanate-based crosslinking agent (Nippon Polyurethanes Co., Ltd.) in 100 parts by mass of acrylic base polymer (copolymer consisting of 2-ethylhexyl acrylate, methyl acrylate and 2-hydroxyethyl acrylate, weight average molecular weight 200,000, glass transition point = -35 ° C.) Manufactured, trade name Coronate L) 3 parts by weight, 10 parts by weight of tetramethylolmethane tetraacrylate as a photopolymerizable compound, and 1 part by weight of α-hydroxycyclohexyl phenyl ketone as a photopolymerization initiator are mixed and mixed to form an adhesive composition. Product 1 was obtained.
（粘着剤組成物２）
　２－エチルヘキシルアクリレート（６９ｍｏｌ％）、２－ヒドロキシエチルアクリレート（２９ｍｏｌ％）及びメタクリル酸（２ｍｏｌ％）からなる共重合体の２－ヒドロキシエチルアクリレート側鎖末端の水酸基と、２－メタクリロイルオキシエチルイソシアネートのイソシアネート基を反応させて、光硬化性炭素－炭素二重結合を有するアクリル系共重合体を得た。この共重合体１００質量部にイソシアネート系架橋剤（日本ポリウレタン社製、商品名コロネートＬ）２質量部、光重合開始剤としてα－ヒドロキシシクロヘキシルフェニルケトン１質量部を添加し、混合して、粘着剤組成物２を得た。 (Adhesive composition 2)
2-hydroxyhexyl acrylate (69 mol%), 2-hydroxyethyl acrylate (29 mol%) and a methacrylic acid (2 mol%) copolymer of 2-hydroxyethyl acrylate side chain terminal hydroxyl group and 2-methacryloyloxyethyl isocyanate By reacting the isocyanate group, an acrylic copolymer having a photocurable carbon-carbon double bond was obtained. To 100 parts by mass of this copolymer, 2 parts by mass of an isocyanate-based cross-linking agent (trade name Coronate L, manufactured by Nippon Polyurethane Co., Ltd.) and 1 part by mass of α-hydroxycyclohexyl phenyl ketone as a photopolymerization initiator are added, mixed, and adhered. Agent composition 2 was obtained.
［実施例１～３、６、７及び比較例１、２］
　実施例１～３、７及び比較例１においては、スチレン－水添イソプレン－スチレンブロック共重合体（ＳＥＰＳ）（クラレ社製、商品名「セプトンＫＦ－２１０４」）とホモプロピレン（ＰＰ）（宇部興産社製、商品名「Ｊ－１０５Ｇ」）を表１で示す配合比で混合し、２軸混練機で、約２００℃でフィルム押し出し成形にて加工し、厚さ１００μｍの基材樹脂フィルムを製造した。
　実施例６では、まず、スチレン－水添イソプレン－スチレンブロック共重合体（ＳＥＰＳ）（クラレ社製、商品名「セプトンＫＦ－２１０４」）３０μｍの樹脂フィルムを用意した。この樹脂フィルムを中間層とし、その両側に、ホモプロピレン（ＰＰ）（宇部興産社製、商品名「Ｊ－１０５Ｇ」）１００質量部に対し、スチレン－水添イソプレン－スチレンブロック共重合体（ＳＥＰＳ）（クラレ社製、商品名「セプトンＫＦ－２１０４」）３０質量部からなる樹脂組成物層各３５μｍを形成して、３層構成の厚さ１００μｍの基材樹脂フィルムを約２００℃でフィルム押し出し成形して得た。表１には、基材樹脂フィルム中間層以外の層の樹脂組成物における配合比を示す。
　比較例２の場合は、アイオノマーとして、三井・デュポンポリケミカル社製、商品名「ハイミラン１５５４」を使用し、約２００℃でフィルム押し出し成形にて加工し、厚さ１００μｍの基材樹脂フィルムを製造した。
　得られた基材樹脂フィルムの一方の表面に、上記の粘着剤組成物１を厚さ１０μｍに塗工して、その後養生することにより、粘着剤層を形成し、実施例１～３、６、７及び比較例１、２のウエハ貼着用粘着シートを製造した。 [Examples 1 to 3, 6, 7 and Comparative Examples 1 and 2]
In Examples 1 to 3, 7 and Comparative Example 1, styrene-hydrogenated isoprene-styrene block copolymer (SEPS) (trade name “Septon KF-2104” manufactured by Kuraray Co., Ltd.) and homopropylene (PP) (Ube) Manufactured by Kosan Co., Ltd., trade name “J-105G”) at a blending ratio shown in Table 1, and processed by film extrusion at about 200 ° C. with a twin-screw kneader to form a base resin film having a thickness of 100 μm. Manufactured.
In Example 6, a styrene-hydrogenated isoprene-styrene block copolymer (SEPS) (manufactured by Kuraray Co., Ltd., trade name “Septon KF-2104”) of 30 μm was prepared. This resin film is used as an intermediate layer, and styrene-hydrogenated isoprene-styrene block copolymer (SEPS) is added to 100 parts by mass of homopropylene (PP) (trade name “J-105G”, manufactured by Ube Industries) on both sides of the resin film. ) (Kuraray Co., Ltd., trade name “Septon KF-2104”) 30 μm of each resin composition layer of 35 μm was formed, and a base resin film having a thickness of 3 μm and a thickness of 100 μm was extruded at about 200 ° C. Obtained by molding. In Table 1, the compounding ratio in the resin composition of layers other than the base resin film intermediate layer is shown.
In the case of Comparative Example 2, the product name “HIMILAN 1554” manufactured by Mitsui DuPont Polychemical Co., Ltd. is used as the ionomer and processed by film extrusion at about 200 ° C. to produce a base resin film having a thickness of 100 μm. did.
On one surface of the obtained base resin film, the pressure-sensitive adhesive composition 1 was applied to a thickness of 10 μm and then cured to form a pressure-sensitive adhesive layer. Examples 1 to 3, 6 , 7 and Comparative Examples 1 and 2 were prepared as pressure-sensitive adhesive sheets for attaching wafers.
［実施例４、５］
　上記スチレン－水添イソプレン－スチレンブロック共重合体（ＳＥＰＳ）に代えて、次の共重合体をそれぞれ表１に示す配合比で混合した以外は、実施例１と同様に行いウエハ貼着用粘着シートを製造した。
　スチレン－水添ブタジエン－スチレン共重合体（ＳＥＢＳ）
　　　　　　　（クラレ社製、商品名「セプトン８１０４」）
　スチレン－水添イソプレン／ブタジエン－スチレン共重合体（ＳＥＥＰＳ）
　　　　　　　（クラレ社製、商品名「セプトン４０３３」） [Examples 4 and 5]
Instead of the styrene-hydrogenated isoprene-styrene block copolymer (SEPS), a pressure-sensitive adhesive sheet for wafer sticking, which was carried out in the same manner as in Example 1, except that the following copolymers were mixed in the mixing ratios shown in Table 1, respectively. Manufactured.
Styrene-hydrogenated butadiene-styrene copolymer (SEBS)
(Kuraray's product name "Septon 8104")
Styrene-hydrogenated isoprene / butadiene-styrene copolymer (SEEPS)
(Kuraray's product name "Septon 4033")
［実施例８］
　実施例１で作製した基材樹脂フィルムの一方の表面に、上記の粘着剤組成物２を厚さ１０μｍに塗工して、その後養生することにより、粘着剤層を形成し、実施例８のウエハ貼着用粘着シートを製造した。 [Example 8]
The pressure-sensitive adhesive composition 2 was applied to one surface of the base resin film produced in Example 1 to a thickness of 10 μm, and then cured to form a pressure-sensitive adhesive layer. A pressure-sensitive adhesive sheet for wafer sticking was produced.
［実施例９］
＜ダイボンドフィルムの作製＞
　エポキシ樹脂としてクレゾールノボラック型エポキシ樹脂（エポキシ当量１９７、分子量１２００、軟化点７０℃）５０質量部、シランカップリング剤としてγ－メルカプトプロピルトリメトキシシラン１．５質量部、γ－ウレイドプロピルトリエトキシシラン３質量部、平均粒径１６ｎｍのシリカフィラー３０質量部を配合して、シクロヘキサノンを加えて攪拌混合し、更にビーズミルを用いて９０分混練した。これにアクリル樹脂（質量平均分子量：８０万、ガラス転移温度－１７℃）１００質量部、キュアゾール２ＰＺ（四国化成（株）製、商品名：２－フェニルイミダゾール）２．５質量部を加え、攪拌混合し、真空脱気して、ダイボンドフィルム用接着剤組成物を得た。該接着剤組成物を厚さ２５μｍの離型処理したポリエチレンテレフタレートフィルム上に塗布し、１１０℃で１分間加熱乾燥して、膜厚が２０μｍの塗膜を形成し、ダイボンドフィルムを作製した。
＜ウエハ貼着用粘着シートの作製＞
　得られたダイボンドフィルムを実施例１と同じ構成の粘着剤層上に貼り合わせることで、粘着剤層上にダイボンドフィルムの接着剤層が形成された、実施例９のウエハ貼着用粘着シートを製造した。 [Example 9]
<Production of die bond film>
50 parts by mass of a cresol novolac type epoxy resin (epoxy equivalent 197, molecular weight 1200, softening point 70 ° C.) as an epoxy resin, 1.5 parts by mass of γ-mercaptopropyltrimethoxysilane as a silane coupling agent, γ-ureidopropyltriethoxysilane 3 parts by mass and 30 parts by mass of silica filler having an average particle diameter of 16 nm were blended, cyclohexanone was added and stirred and mixed, and further kneaded for 90 minutes using a bead mill. To this was added 100 parts by mass of acrylic resin (mass average molecular weight: 800,000, glass transition temperature -17 ° C.) and 2.5 parts by mass of Curesol 2PZ (trade name: 2-phenylimidazole, manufactured by Shikoku Kasei Co., Ltd.), and stirred. It mixed and deaerated in vacuum and the adhesive composition for die-bonding films was obtained. The adhesive composition was applied onto a release-treated polyethylene terephthalate film having a thickness of 25 μm and dried by heating at 110 ° C. for 1 minute to form a coating film having a thickness of 20 μm, thereby producing a die bond film.
<Preparation of adhesive sheet for wafer attachment>
The obtained die-bonding film is bonded onto the pressure-sensitive adhesive layer having the same structure as in Example 1, thereby producing a wafer-bonding pressure-sensitive adhesive sheet in Example 9 in which the adhesive layer of the die-bonding film is formed on the pressure-sensitive adhesive layer. did.
　実施例１～９及び比較例１、２のウエハ貼着用粘着シートの粘着剤層又は接着剤層上に、直径６インチ、厚さ３５０μｍの表面金蒸着シリコンウエハを貼合し、ダイシング装置（ＤＩＳＣＯ社製、ＤＡＤ－３４０）を使用してチップサイズが５ｍｍ角となるようにダイシングをおこなった。ダイシング条件は、回転丸刃回転数：４００００ｒｐｍ、切削速度：１００ｍｍ／ｓ、切削水流量は２０ｍＬである。また、ダイシングの際、回転丸刃が粘着シートに切り込む深さは３０μｍとなるように行った。 A surface gold-deposited silicon wafer having a diameter of 6 inches and a thickness of 350 μm was pasted on the pressure-sensitive adhesive layer or adhesive layer of the pressure-sensitive adhesive sheet to be adhered to the wafers of Examples 1 to 9 and Comparative Examples 1 and 2, and a dicing apparatus (DISCO Dicing was performed using a DAD-340) manufactured by the company so that the chip size was 5 mm square. The dicing conditions are: a rotating round blade rotation speed: 40000 rpm, a cutting speed: 100 mm / s, and a cutting water flow rate of 20 mL. Moreover, the depth which a rotary round blade cuts into an adhesive sheet in the case of dicing was performed so that it might be set to 30 micrometers.
　諸特性評価を下記のように行い、結果を表１に示した。
（損失係数）
　実施例１～９及び比較例１、２のウエハ貼着用粘着シートから、幅５ｍｍ×長さ１０ｍｍの試験片を切り出した。その試験片を動的粘弾性測定装置（ユービーエム社製、Ｒｈｅｏｇｅｌ－Ｅ４０００）の支持用治具に固定し、温度２３℃、周波数４００～９００Ｈｚで測定し、その範囲内での損失係数の最小値を得た。また、実施例１～７および比較例１、２のウエハ貼着用粘着シートから切り出した、幅５ｍｍ×長さ１０ｍｍの試験片を同様に、前記動的粘弾性測定装置の支持用治具に固定し、周波数６５０Ｈｚ、温度１５～４０℃で測定し、その範囲内での損失係数の最小値を得た。 Various characteristics were evaluated as follows, and the results are shown in Table 1.
(Loss factor)
Test pieces having a width of 5 mm and a length of 10 mm were cut out from the adhesive sheets for sticking wafers of Examples 1 to 9 and Comparative Examples 1 and 2. The test piece is fixed to a supporting jig of a dynamic viscoelasticity measuring apparatus (Rheogel-E4000, manufactured by UBM), measured at a temperature of 23 ° C. and a frequency of 400 to 900 Hz, and has a minimum loss coefficient within that range. Got the value. Similarly, test pieces of 5 mm width × 10 mm length cut out from the adhesive sheets for attaching wafers of Examples 1 to 7 and Comparative Examples 1 and 2 were similarly fixed to the supporting jig of the dynamic viscoelasticity measuring apparatus. Then, measurement was performed at a frequency of 650 Hz and a temperature of 15 to 40 ° C., and the minimum value of the loss coefficient within the range was obtained.
（５％モジュラス）
　実施例１～９及び比較例１、２のウエハ貼着用粘着シートに使用した基材樹脂フィルムを用いて、ＪＩＳ　Ｋ７１２７／２／３００に従い、試験片を作製し、５％モジュラスを測定した。測定数ｎ＝５の平均値を試験結果とした。 (5% modulus)
Using the base resin films used for the adhesive sheets for attaching wafers in Examples 1 to 9 and Comparative Examples 1 and 2, test pieces were prepared according to JIS K7127 / 2/300, and 5% modulus was measured. The average value of the number of measurements n = 5 was taken as the test result.
（引き裂き強さ）
　実施例１～９及び比較例１、２のウエハ貼着用粘着シートに使用した基材樹脂フィルムを用いて、ＪＩＳ　Ｋ７１２８－３に従い、試験片を作製し、引き裂き強さを測定した。測定数ｎ＝５の平均値を試験結果とした。 (Tear strength)
Using the base resin films used for the adhesive sheets for attaching wafers of Examples 1 to 9 and Comparative Examples 1 and 2, test pieces were prepared according to JIS K7128-3, and the tear strength was measured. The average value of the number of measurements n = 5 was taken as the test result.
（チッピング性）
　実施例１～９及び比較例１、２のウエハ貼着用粘着シートにウエハをマウントし、ダイシングを行った。その後、紫外線照射を実施し（５００ｍＪ／ｍ２）、１枚のウエハからランダムに５０チップを取り出し、チップ裏面（粘着面）の各辺における最大のチッピングの大きさを顕微鏡（１００～２００倍）で測定し、全値の平均を算出した。 (Chipability)
The wafer was mounted on the adhesive sheet for attaching wafers of Examples 1 to 9 and Comparative Examples 1 and 2, and dicing was performed. After that, UV irradiation was performed (500 mJ / m 2 ), 50 chips were randomly taken out from one wafer, and the maximum chipping size on each side of the chip back surface (adhesive surface) was measured with a microscope (100 to 200 times). The average of all values was calculated.
（エキスパンド性）
　実施例１～９及び比較例１、２のウエハ貼着用粘着シートにウエハをマウントし、ダイシングを行った。その後、紫外線照射を実施し（５００ｍＪ／ｍ２）、エキスパンド装置（テクノビジョン社製、商品名「ＴＥＸ－２１８Ｇ」）を使用して、２０ｍｍエキスパンドし粘着シートの破断の有無を評価した。測定数ｎ＝３０とし、一度も破断しなかった場合は◎、測定数ｎ＝３０中、破断したサンプル数がｎ＝３未満を○、ｎ＝３以上が破断した場合は×とした。 (Expandable)
The wafer was mounted on the adhesive sheet for attaching wafers of Examples 1 to 9 and Comparative Examples 1 and 2, and dicing was performed. Thereafter, ultraviolet irradiation was performed (500 mJ / m 2 ), and using an expanding apparatus (trade name “TEX-218G” manufactured by Technovision), the adhesive sheet was evaluated for the presence or absence of breakage. The number of measurements was set to n = 30, and when the sample was never broken, 一度, among the measured number n = 30, the number of broken samples was less than n = 3, and when n = 3 or more was broken, it was marked as x.
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
（分散径の測定）
　前記の通り作製した実施例１および２に使用した基材樹脂フィルムをエポキシ樹脂で固めた後に、四酸化ルテニウムで染色し、ミクロトームを用いて薄切片を作製した。その薄切片を透過電子顕微鏡（日立ハイテクノロジーズ社製、商品名「Ｈ－９０００ＮＡ」）で、観察した。その結果、実施例１も、実施例２も、連続相中に染色された分散相が存在する様子が観察された。ＳＥＰＳに含まれるスチレンが四酸化ルテニウムによって染色されやすいことから、連続相がポリプロピレンで、分散相がＳＥＰＳであることがわかった。透過電子顕微鏡の視野（２００ｎｍ×２００ｎｍ）における分散相の粒子直径を測定し、その平均値を求めた。その結果、実施例１のＳＥＰＳの平均直径は２１ｎｍであった。また、実施例２のＳＥＰＳの平均直径は１９ｎｍであった。また、実施例３の平均直径は１８ｎｍであった。 (Measurement of dispersion diameter)
The base resin film used in Examples 1 and 2 prepared as described above was solidified with an epoxy resin, then stained with ruthenium tetroxide, and a thin slice was prepared using a microtome. The thin section was observed with a transmission electron microscope (manufactured by Hitachi High-Technologies Corporation, trade name “H-9000NA”). As a result, in both Example 1 and Example 2, it was observed that a disperse phase dyed in the continuous phase was present. Since styrene contained in SEPS was easily dyed with ruthenium tetroxide, it was found that the continuous phase was polypropylene and the dispersed phase was SEPS. The particle diameter of the dispersed phase in the field of view (200 nm × 200 nm) of the transmission electron microscope was measured, and the average value was obtained. As a result, the average diameter of the SEPS in Example 1 was 21 nm. Moreover, the average diameter of SEPS of Example 2 was 19 nm. Moreover, the average diameter of Example 3 was 18 nm.
　表１に示すように、実施例１～９のウエハ貼着用粘着シートは、比較例１、２のウエハ貼着用粘着シートに比べチッピングの大きさを１／２以下に大幅に低減でき、且つエキスパンド性でも良好な性能を示した。 As shown in Table 1, the adhesive sheets for attaching wafers of Examples 1 to 9 can greatly reduce the size of chipping to ½ or less compared to the adhesive sheets for attaching wafers of Comparative Examples 1 and 2, and are expanded. Also showed good performance.
　１　基材樹脂フィルム
　２　粘着剤層
　１１　ホルダー
　１２　ウエハ貼着用粘着シート
　１３　半導体ウエハ
　１４　素子小片（チップ）
　１５　実線矢印方向
　１６　エキスパンダー
　１７　点線矢印方向 DESCRIPTION OF SYMBOLS 1 Base resin film 2 Adhesive layer 11 Holder 12 Adhesive sheet for wafer sticking 13 Semiconductor wafer 14 Element piece (chip)
15 Solid arrow direction 16 Expander 17 Dotted arrow direction
　本発明をその実施態様とともに説明したが、我々は特に指定しない限り我々の発明を説明のどの細部においても限定しようとするものではなく、添付の請求の範囲に示した発明の精神と範囲に反することなく幅広く解釈されるべきであると考える。 While this invention has been described in conjunction with its embodiments, we do not intend to limit our invention in any detail of the description unless otherwise specified and are contrary to the spirit and scope of the invention as set forth in the appended claims. I think it should be interpreted widely.
　本願は、２００９年７月８日に日本国で特許出願された特願２００９－１６２００９に基づく優先権を主張するものであり、これはここに参照してその内容を本明細書の記載の一部として取り込む。 This application claims priority based on Japanese Patent Application No. 2009-162009 filed in Japan on July 8, 2009, the contents of which are hereby incorporated herein by reference. Capture as part.

Claims (8)

  1. 　基材樹脂フィルムと、該基材樹脂フィルム上に粘着剤層が形成された粘着シートであって、該粘着シートを幅５ｍｍに加工した試験片を用いて、動的粘弾性測定装置により、温度２３℃において周波数４００～９００Ｈｚの引張応力を印加することにより測定された損失係数の最小値が０．２０以上であり、かつ温度１５～４０℃において周波数６５０Ｈｚの引張応力を印加することにより測定された損失係数の最小値が０．２０以上であることを特徴とするウエハ貼着用粘着シート。 A pressure-sensitive adhesive sheet having a base resin film and a pressure-sensitive adhesive layer formed on the base resin film, the test piece obtained by processing the pressure-sensitive adhesive sheet into a width of 5 mm, is measured by a dynamic viscoelasticity measuring device. The minimum value of the loss factor measured by applying a tensile stress with a frequency of 400 to 900 Hz at 23 ° C. is 0.20 or more, and is measured by applying a tensile stress with a frequency of 650 Hz at a temperature of 15 to 40 ° C. The adhesive sheet for sticking to a wafer, wherein the minimum loss coefficient is 0.20 or more.
  2. 　前記基材樹脂フィルムの５％モジュラスが４．０～７．０ＭＰａであり、かつ引き裂き強さが１００Ｎ／ｍｍ以上であることを特徴とする請求項１記載のウエハ貼着用粘着シート。 2. The adhesive sheet for adhering to a wafer according to claim 1, wherein the substrate resin film has a 5% modulus of 4.0 to 7.0 MPa and a tear strength of 100 N / mm or more.
  3. 　前記基材樹脂フィルムの少なくとも１層が、スチレン－水添イソプレン－スチレンブロック共重合体、スチレン－イソプレン－スチレン共重合体、スチレン－水添ブタジエン－スチレン共重合体およびスチレン－水添イソプレン－ブタジエン－スチレン共重合体から選ばれた少なくとも１種を含有することを特徴とする請求項１または２に記載のウエハ貼着用粘着シート。 At least one layer of the base resin film comprises a styrene-hydrogenated isoprene-styrene block copolymer, a styrene-isoprene-styrene copolymer, a styrene-hydrogenated butadiene-styrene copolymer, and a styrene-hydrogenated isoprene-butadiene. The adhesive sheet for adhering a wafer according to claim 1 or 2, comprising at least one selected from styrene copolymers.
  4. 　前記基材樹脂フィルムの少なくとも１層が、（Ａ）成分としてポリプロピレン樹脂１００質量部に対し、（Ｂ）成分としてスチレン－水添イソプレン－スチレンブロック共重合体、スチレン－イソプレン－スチレン共重合体、スチレン－水添ブタジエン－スチレン共重合体およびスチレン－水添イソプレン－ブタジエン－スチレン共重合体から選ばれた少なくとも１種３０～１００質量部を含有する樹脂組成物であることを特徴とする請求項１～３のいずれか１項に記載のウエハ貼着用粘着シート。 At least one layer of the base resin film is composed of 100 parts by mass of polypropylene resin as component (A), styrene-hydrogenated isoprene-styrene block copolymer, styrene-isoprene-styrene copolymer as component (B), The resin composition comprising 30 to 100 parts by mass of at least one selected from a styrene-hydrogenated butadiene-styrene copolymer and a styrene-hydrogenated isoprene-butadiene-styrene copolymer. 4. The adhesive sheet for sticking a wafer according to any one of 1 to 3.
  5. 　前記基材樹脂フィルムのうち少なくとも１層が、（Ａ）成分を連続相とし、（Ｂ）成分を分散相とする樹脂分散体で構成され、当該分散相粒子の平均直径が１５ｎｍ以上であることを特徴とする請求項４に記載のウエハ貼着用粘着シート。 At least one layer of the base resin film is composed of a resin dispersion in which the component (A) is a continuous phase and the component (B) is a dispersed phase, and the average diameter of the dispersed phase particles is 15 nm or more. The adhesive sheet for sticking a wafer according to claim 4.
  6. 　前記粘着剤層上にさらに接着剤層が形成されたことを特徴とする請求項１～５のいずれか１項に記載のウエハ貼着用粘着シート。 The adhesive sheet for sticking a wafer according to any one of claims 1 to 5, wherein an adhesive layer is further formed on the adhesive layer.
  7. 　前記粘着剤層を形成する粘着剤がアクリル系粘着剤であることを特徴とする請求項１～６のいずれか１項に記載のウエハ貼着用粘着シート。 The pressure-sensitive adhesive sheet for sticking a wafer according to any one of claims 1 to 6, wherein the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer is an acrylic pressure-sensitive adhesive.
  8. 　請求項１～７のいずれか１項に記載のウエハ貼着用粘着シートにウエハを貼合し、該ウエハのダイシングを行うウエハの加工方法であって、前記基材樹脂フィルムまで切り込みを行わないことを特徴とするウエハの加工方法。 A wafer processing method in which a wafer is bonded to the wafer sticking pressure-sensitive adhesive sheet according to any one of claims 1 to 7, and the wafer is diced, and the base resin film is not cut. A wafer processing method characterized by the above.
PCT/JP2010/061485 2009-07-08 2010-07-06 Wafer-pasting adhesive sheet and wafer processing method using the same WO2011004825A1 (en)

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Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013072036A (en) * 2011-09-28 2013-04-22 Furukawa Electric Co Ltd:The Pressure-sensitive adhesive tape for working brittle wafer and grinding method using the same
KR20140019355A (en) * 2011-05-17 2014-02-14 린텍 코포레이션 Film and adhesive sheet
JP2015530702A (en) * 2012-08-03 2015-10-15 エルジー・ケム・リミテッド Adhesive film and organic electronic device sealing method using the same
JP2015185591A (en) * 2014-03-20 2015-10-22 日立化成株式会社 Wafer processing tape
WO2016093308A1 (en) * 2014-12-12 2016-06-16 日東電工株式会社 Dicing sheet, dicing/die-bonding film, and method for manufacturing semiconductor device
TWI555806B (en) * 2014-10-20 2016-11-01 積水化成品工業股份有限公司 Adhesive gel sheet for a bonding purpose, a method of manufacturing the same, a fixing method for bonded bodies, and composity materials
JPWO2014129469A1 (en) * 2013-02-22 2017-02-02 デンカ株式会社 Adhesive sheet and method for manufacturing electronic component using adhesive sheet
JP2017057341A (en) * 2015-09-18 2017-03-23 住友ベークライト株式会社 Tape for tentative fixing
JP2017183640A (en) * 2016-03-31 2017-10-05 古河電気工業株式会社 Tape for electronic device package
WO2017170437A1 (en) * 2016-03-31 2017-10-05 古河電気工業株式会社 Adhesive sheet for semiconductor processing
WO2018105613A1 (en) * 2016-12-07 2018-06-14 古河電気工業株式会社 Tape for semiconductor processing
CN108207116A (en) * 2016-03-31 2018-06-26 古河电气工业株式会社 Semiconductor machining bonding sheet
JP2018165293A (en) * 2017-03-28 2018-10-25 古河電気工業株式会社 Adhesive tape
JP2018195616A (en) * 2017-05-12 2018-12-06 古河電気工業株式会社 Adhesive tape for semiconductor processing
KR20190059935A (en) * 2016-10-27 2019-05-31 미쓰이 가가쿠 토세로 가부시키가이샤 Method for manufacturing electronic device, adhesive film for electronic device manufacturing
JP2020036007A (en) * 2018-08-23 2020-03-05 東レ株式会社 Film, and method of manufacturing film
EP3533850A4 (en) * 2016-10-27 2020-06-17 Mitsui Chemicals Tohcello, Inc. Electronic device production method, adhesive film for electronic device production, and electronic component testing device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101659057B1 (en) * 2013-09-30 2016-09-22 주식회사 엘지화학 Semiconductor wafer dicing film and dicing die bonding film
JP6068386B2 (en) * 2014-03-31 2017-01-25 日東電工株式会社 Thermosetting die bond film, dicing die bond film, and semiconductor device manufacturing method
JP6280459B2 (en) * 2014-06-27 2018-02-14 株式会社ディスコ Tape expansion unit
JP7430853B2 (en) * 2019-05-28 2024-02-14 シーカ テクノロジー アクチェンゲゼルシャフト Methods for selecting adhesives, adhesive composites, and methods for manufacturing adhesive composites

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002155249A (en) * 2000-11-22 2002-05-28 Mitsui Chemicals Inc Adhesive tape for processing wafer and method for producing the same and method for using the same
JP2003092273A (en) * 2001-09-19 2003-03-28 Mitsubishi Plastics Ind Ltd Dicing film for semiconductor wafer
JP2007335467A (en) * 2006-06-12 2007-12-27 Furukawa Electric Co Ltd:The Dicing tape for laser dicing
JP2008066688A (en) * 2006-08-11 2008-03-21 Furukawa Electric Co Ltd:The Tape for wafer processing
JP2008103655A (en) * 2006-09-20 2008-05-01 Furukawa Electric Co Ltd:The Wafer adhesive sheet and wafer manufacturing method
WO2009063793A1 (en) * 2007-11-15 2009-05-22 The Furukawa Electric Co., Ltd. Adhesive tape for processing semiconductor wafer
WO2009078440A1 (en) * 2007-12-18 2009-06-25 The Furukawa Electric Co., Ltd. Adhesive sheet for bonding wafer and wafer processing method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002155249A (en) * 2000-11-22 2002-05-28 Mitsui Chemicals Inc Adhesive tape for processing wafer and method for producing the same and method for using the same
JP2003092273A (en) * 2001-09-19 2003-03-28 Mitsubishi Plastics Ind Ltd Dicing film for semiconductor wafer
JP2007335467A (en) * 2006-06-12 2007-12-27 Furukawa Electric Co Ltd:The Dicing tape for laser dicing
JP2008066688A (en) * 2006-08-11 2008-03-21 Furukawa Electric Co Ltd:The Tape for wafer processing
JP2008103655A (en) * 2006-09-20 2008-05-01 Furukawa Electric Co Ltd:The Wafer adhesive sheet and wafer manufacturing method
WO2009063793A1 (en) * 2007-11-15 2009-05-22 The Furukawa Electric Co., Ltd. Adhesive tape for processing semiconductor wafer
WO2009078440A1 (en) * 2007-12-18 2009-06-25 The Furukawa Electric Co., Ltd. Adhesive sheet for bonding wafer and wafer processing method

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US9343697B2 (en) 2012-08-03 2016-05-17 Lg Chem, Ltd. Adhesive film and sealing method for organic electronic device using same
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