WO2011004684A1 - 基板および超電導線材の製造方法 - Google Patents
基板および超電導線材の製造方法 Download PDFInfo
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- WO2011004684A1 WO2011004684A1 PCT/JP2010/060102 JP2010060102W WO2011004684A1 WO 2011004684 A1 WO2011004684 A1 WO 2011004684A1 JP 2010060102 W JP2010060102 W JP 2010060102W WO 2011004684 A1 WO2011004684 A1 WO 2011004684A1
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- 239000000758 substrate Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 124
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 42
- 239000010949 copper Substances 0.000 claims abstract description 33
- 238000007747 plating Methods 0.000 claims abstract description 15
- 229910052802 copper Inorganic materials 0.000 claims abstract description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 133
- 239000010409 thin film Substances 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000000313 electron-beam-induced deposition Methods 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 3
- 229910018054 Ni-Cu Inorganic materials 0.000 description 2
- 229910018481 Ni—Cu Inorganic materials 0.000 description 2
- -1 YAlO 3 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000002887 superconductor Substances 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 241000954177 Bangana ariza Species 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 235000002639 sodium chloride Nutrition 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B12/00—Superconductive or hyperconductive conductors, cables, or transmission lines
- H01B12/02—Superconductive or hyperconductive conductors, cables, or transmission lines characterised by their form
- H01B12/06—Films or wires on bases or cores
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/026—Alloys based on copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
- H10N60/0632—Intermediate layers, e.g. for growth control
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Definitions
- the present invention relates to a method for manufacturing a substrate and a method for manufacturing a superconducting wire.
- a ceramic thin film intermediate layer is formed on a metal substrate, and a superconducting layer is formed thereon.
- a superconducting layer is formed thereon.
- Patent Document 1 an oxide layer on the surface of an oriented metal substrate is removed, and thin films such as an intermediate layer and a superconducting layer are epitaxially grown while maintaining the biaxial orientation of the oriented metal substrate. How to do is described.
- an object of the present invention is to provide a method for producing a substrate and a method for producing a superconducting wire capable of improving the orientation and flatness of the nickel plating layer surface.
- the present invention provides a nickel layer after a step of preparing a substrate having a nickel layer formed on a copper layer using a plating method, a step of heat-treating the nickel layer at 800 to 1000 ° C., and a step of heat-treating the nickel layer And a step of epitaxially growing an intermediate layer thereon.
- a substrate having improved orientation and flatness of the nickel layer surface can be obtained by heat-treating the nickel layer at 800 to 1000 ° C. Moreover, it can suppress that a copper atom diffuses from a copper layer to the nickel layer surface in the case of heat processing.
- the step of heat-treating the nickel layer is preferably performed in a reducing atmosphere.
- the oxide film formed on the surface of the nickel layer can be removed.
- the step of heat-treating the nickel layer is performed under an atmosphere of a gas containing hydrogen under reduced pressure.
- the oxide film formed on the nickel layer surface can be more effectively removed.
- the present invention provides a nickel layer after a step of preparing a substrate having a nickel layer formed on a copper layer using a plating method, a step of heat-treating the nickel layer at 800 to 1000 ° C., and a step of heat-treating the nickel layer
- a method of manufacturing a superconducting wire comprising a step of epitaxially growing an intermediate layer thereon and a step of forming a superconducting layer on the intermediate layer.
- a substrate having improved nickel layer surface orientation and flatness can be obtained by heat-treating the nickel layer at 800 to 1000 ° C.
- a superconducting wire with improved flatness can be obtained.
- a substrate with improved orientation and flatness of the nickel layer surface and a superconducting wire with improved orientation and flatness of the superconducting layer can be obtained.
- FIG. 1 is a cross-sectional view schematically showing a method for manufacturing a substrate 1 according to an embodiment of the present invention.
- substrate 1 in one embodiment of this invention uses the plating method as shown in FIG.1 (b) on Cu layer 2 as shown in FIG.1 (a).
- Step of preparing a substrate> As shown in FIG.1 (b), specifically, the base material with which the Ni layer 3 was formed on the Cu layer 2 using the plating method is prepared first.
- the Cu layer 2 is suitable for an alignment substrate because Cu atoms are biaxially oriented.
- the term “biaxially oriented” includes not only complete biaxial orientation but also a case where the crystal axis shift angle is 25 ° or less.
- the orientation is preferably such that the ⁇ 100> axis is oriented in the direction perpendicular to the substrate surface and the ⁇ 010> axis is oriented in the length direction of the substrate.
- the Cu layer 2 can be laminated on another metal or alloy.
- the Cu layer 2 can be provided on stainless steel (hereinafter referred to as SUS), which is a high-strength material.
- the Cu layer 2 can have a long tape-like shape.
- the Ni layer 3 is formed on the Cu layer 2 using a plating method. Examples of the plating method include an electrolytic plating method and an electroless plating method. In consideration of efficient and continuous processing, the electrolytic plating method is preferable.
- the Ni layer 3 is a layer for preventing oxidation when the intermediate layer 4 is formed. When the Cu layer 2 is oriented, the Ni layer 3 formed thereon is also oriented.
- the thickness of the Ni layer 3 is preferably 1 to 10 ⁇ m, and more preferably 1 to 3 ⁇ m.
- the thickness is 1 ⁇ m or more, Cu atoms can be prevented from diffusing to the surface of the Ni layer even when heat of about 800 to 1000 ° C. is applied in the step of heat-treating the Ni layer 3 described later. For this reason, it is possible to effectively exhibit the function of the Ni layer 3 that is not easily oxidized and has good lattice matching with the intermediate layer 4. If the thickness of the Ni layer 3 exceeds 10 ⁇ m, the orientation of the epitaxial growth of the Ni layer 3 may be greatly broken, which is not preferable.
- the step of heat-treating the Ni layer 3 is preferably performed in a reducing atmosphere.
- the heat treatment in a reducing atmosphere refers to heat treatment in a reducing atmosphere sufficient to remove the oxide layer formed on the surface of the oriented metal substrate.
- Under reducing atmosphere means, for example, the presence of a reducing gas such as hydrogen (H 2 ) gas under reduced pressure.
- Under reduced pressure is a pressure lower than atmospheric pressure, and is preferably 1 to 10 Pa, for example.
- the H 2 gas should be 1 mol% or more. Preferably, it is 3 mol% or more.
- the temperature for heat-treating the Ni layer 3 is preferably 800 to 1000 ° C.
- the heat treatment temperature is less than 800 ° C.
- the orientation and flatness of the Ni layer 3 are not sufficiently improved.
- the temperature exceeds 1000 ° C. Ni and Cu diffuse and form a complete alloy, so that Cu diffuses on the Ni layer surface. Since Cu is easily oxidized, the orientation and flatness of the surface of the Ni layer 3 cannot be improved.
- the time for heat-treating the Ni layer 3 is not particularly limited, but is preferably 15 minutes or more. If the heat treatment time is less than 15 minutes, the orientation and flatness of the Ni layer 3 are not sufficiently improved.
- the intermediate layer 4 is epitaxially grown on the heat-treated Ni layer 3 to obtain the substrate 1.
- a metal oxide having one or more metal elements having a pyrochlore type, a meteorite type, a rock salt type or a perovskite type crystal structure is preferably used.
- the rare earth element oxide such as CeO 2, YSZ (yttria-stabilized zirconia), BZO (BaZrO 3), STO (SrTiO 3), Al 2 O 3, YAlO 3, MgO, Ln-M-O -based Compounds (Ln is one or more lanthanoid elements, M is one or more elements selected from Sr, Zr and Ga, and O is oxygen).
- Such an oxide alleviates the difference in crystal constant and crystal orientation between the Cu layer 2 which is an oriented metal substrate and the superconducting layer 5 formed on the intermediate layer 4, and metal atoms from the Cu layer 2 to the superconducting layer. It plays a role in preventing the outflow.
- the method for forming the oxide thin film to be the intermediate layer 4 is not particularly limited as long as it does not contradict the object of the present invention.
- a method such as a pulse laser deposition method or a thermal evaporation method is preferably used.
- a CeO 2 thin film is formed as an intermediate layer 4 on the Ni layer 3 that is biaxially oriented in the direction in which the ⁇ 100> axis after the heat treatment is perpendicular to the substrate surface and the ⁇ 010> axis is in the length direction of the substrate. is grown epitaxially, the ⁇ 100> axis is the direction perpendicular to the substrate surface, ⁇ 011> axes CeO 2 thin film is formed which is aligned in a lengthwise direction of the substrate, high CeO 2 thin film biaxial orientation is obtained It is done.
- the intermediate layer 4 has good orientation and flatness, so that the superconducting layer 5 having high biaxial orientation can be obtained.
- Superconducting layer 5 has a long tape-like shape.
- the superconducting layer 5 is made of REBa 2 Cu 3 O y (y is 6 to 8, more preferably about 7, RE is Y (yttrium), or rare earth such as Gd (gadolinium), Sm (samarium), Ho (holmium), etc.
- GdBCO is expressed as GdBa 2 Cu 3 O y (y is 6 to 8, more preferably approximately 7).
- the method for forming the oxide thin film to be the superconducting layer 5 is not particularly limited as long as it does not contradict the purpose of the present invention.
- PLD method, MOD (Metal Organic Deposition) method, MOCVD (Organic Metal Vapor Phase) A method such as growth; Metal Organic Chemical Vapor Deposition) is preferably used.
- a protective layer (not shown) can be formed on the superconducting layer 5 as necessary.
- the protective layer is not particularly limited as long as it has high conductivity, but Ag, Au, Pt, Al, or an alloy thereof is preferably used.
- Methods such as a sputtering method, EBD method, PLD method, thermal evaporation method, MOD method, MOCVD method, a plating method, are used preferably.
- Example 1 a substrate having a Cu layer with a thickness of 18 ⁇ m on a SUS substrate was prepared.
- the substrate having the Cu layer was subjected to electrolytic nickel plating to form a Ni layer having a thickness shown in Table 1.
- the Ni layer is formed under a pressure of 8.1 Pa atmosphere using a mixed gas of H 2 gas and Ar gas (composition: H 2 gas 3 mol%, Ar gas 97 mol%) as a reducing gas.
- the heat treatment was performed at the heat treatment temperature shown in 1 for 16 minutes.
- a mixed gas of H 2 gas and Ar gas composition: H 2 gas 3 mol%, Ar gas 97 mol%) was used as the reducing gas, under a pressure of 5.2 Pa atmosphere, and the substrate temperature.
- a CeO 2 thin film having a thickness of 0.15 ⁇ m was formed on the nickel layer as a first intermediate layer.
- a YSZ thin film having a thickness of 0.25 ⁇ m was formed as a second intermediate layer to prevent element diffusion. Further, a CeO 2 thin film having a thickness of 0.05 ⁇ m was formed as a third intermediate layer for lattice matching with the superconducting film.
- a GdBCO film was formed as a superconducting layer on the intermediate layer consisting of the three layers by the PLD method.
- the obtained substrate was measured for the biaxial orientation, surface roughness (Ra) and Ni—Cu diffusion of the CeO 2 thin film as the first intermediate layer. Further, the critical current value Ic was measured for the obtained superconducting wire.
- the X-ray diffraction peak intensity from the (200) plane is the amount of crystals in which the ⁇ 100> axis is biaxially oriented in the direction perpendicular to the substrate surface and the ⁇ 011> axis is biaxially oriented in the length direction of the substrate.
- the X-ray diffraction peak intensity from the (111) plane indicates the amount of crystals in which the ⁇ 111> axis is uniaxially oriented in the direction perpendicular to the substrate surface.
- Ra Surface roughness
- Ni-Cu diffusion is performed by 2A (°) of (A) copper layer (200) plane (Cu (200) plane) and (B) Ni layer (200) plane (Ni (200) plane). ), Measured by the XRD method, and evaluated by the numerical values of (B)-(A), the smaller the numerical value, the more the alloying of Ni and Cu progresses. Further, when the value is 0, it indicates that the alloy is completely alloyed.
- the critical current value Ic was measured in a self-magnetic field at a temperature of 77 K, and was defined as an energization current value when an electric field of 10 ⁇ 6 V / cm was generated.
- Examples 1 to 4 are substrates obtained by heat-treating the Ni layer at a temperature in the range of 850 to 950 ° C. Compared to Comparative Examples 1 and 2 in which the Ni layer was not heat-treated, the biaxial orientation of the CeO 2 thin film as the first intermediate layer could be improved. Further, the thicker the Ni layer, the higher the heat treatment temperature is required for improving the biaxial orientation of the CeO 2 thin film as the first intermediate layer. Furthermore, the surface roughness can be reduced and the surface flatness is improved as compared with Comparative Examples 1 and 2 in which the Ni layer is not heat-treated. Cu and Ni were only partially alloyed, and Cu did not diffuse on the Ni layer surface.
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Abstract
Description
図1(b)に示すように、具体的には、まず、めっき法を用いてCu層2上にNi層3が形成された基材を準備する。
Ni層3は、Cu層2上に、めっき法を用いて形成する。めっき法の方法としては、電解めっき法、無電解めっき法などの方法が挙げられる。特に効率よく、連続処理することを考慮すると、電解めっき法が好ましい。Ni層3は、中間層4を形成する際に、酸化を防止するための層である。Cu層2が配向している場合には、その上に形成されるNi層3も配向する。
次に、Ni層3を熱処理する。この工程により、Ni層3の配向性および平坦性が向上する。
図1(c)に示すように、次に、熱処理を行ったNi層3上に中間層4をエピタキシャル成長させて、基板1を得る。中間層4としては、パイロクロア型、螢石型、岩塩型またはペロブスカイト型の結晶構造をもつ、1種以上の金属元素を有する金属酸化物が好ましく用いられる。具体的には、CeO2などの希土類元素酸化物、YSZ(イットリア安定化ジルコニア)、BZO(BaZrO3)、STO(SrTiO3)、Al2O3、YAlO3、MgO、Ln-M-O系化合物(Lnは1種以上のランタノイド元素、MはSr、ZrおよびGaの中から選ばれる1種以上の元素、Oは酸素)などが挙げられる。かかる酸化物は、配向金属基板であるCu層2と、中間層4上に形成される超電導層5の、結晶定数および結晶配向の差を緩和するとともに、Cu層2から超電導層への金属原子の流出を防止する役割を果たす。中間層4となる酸化物薄膜の形成方法としては、本発明の目的に反さない限り特に制限はなく、スパッタ法、EBD(電子線ビーム蒸着;Electron Beam Deposition)法、PLD(パルスレーザー蒸着;Pulse Laser Deposition)法、熱蒸着法などの方法が好ましく用いられる。
得られた基板1の中間層4の上に超電導層5を形成した場合、中間層4は配向性および平坦性が良好であるため、2軸配向性の高い超電導層5を得ることができる。
まず、SUS基板上に18μmの厚みのCu層を有する基板を準備した。前記Cu層を有する基板を電解ニッケルめっきを行い、表1に示す厚みのNi層を形成した。
Ni層の熱処理を行わない以外は、上記実施例1~4と同様にして3層からなる中間層および超電導層を形成した。
上記実施例1~4と同様にして3層からなる中間層および超電導層を形成した。
得られた基板について、第1の中間層であるCeO2薄膜の2軸配向性、表面粗さ(Ra)およびNi-Cu拡散について測定を行った。さらに、得られた超電導線材について、臨界電流値Icについて測定を行った。
実施例1~4は、Ni層を850~950℃の範囲の温度で熱処理した基板である。Ni層の熱処理を行わない比較例1および2に比べて、第1の中間層であるCeO2薄膜の2軸配向性を向上することができた。また、Ni層が厚いほど、第1の中間層であるCeO2薄膜の2軸配向性の向上には高い熱処理温度が必要であった。さらに、Ni層の熱処理を行わない比較例1および2に比べて、表面粗さを小さくすることができ、表面平坦性が向上した。またCuとNiは一部のみ合金化し、Ni層表面にCuは拡散しなかった。
Claims (4)
- めっき法を用いて銅層(2)上にニッケル層(3)が形成された基材を準備する工程と、
前記ニッケル層(3)を800~1000℃で熱処理する工程と、
前記ニッケル層(3)を熱処理する工程の後に前記ニッケル層(3)上に中間層(4)をエピタキシャル成長させる工程とを備えた、基板(1)の製造方法。 - 前記ニッケル層(3)を熱処理する工程を還元雰囲気下にて行う、請求の範囲1に記載の基板(1)の製造方法。
- 前記ニッケル層(3)を熱処理する工程を減圧下で水素を含むガスの雰囲気下にて行う、請求の範囲1に記載の基板(1)の製造方法。
- めっき法を用いて銅層(2)上にニッケル層(3)が形成された基材を準備する工程と、
前記ニッケル層(3)を800~1000℃で熱処理する工程と、
前記ニッケル層(3)を熱処理する工程の後に前記ニッケル層(3)上に中間層(4)をエピタキシャル成長させる工程と、
前記中間層(4)上に超電導層(5)を形成する工程とを備えた、超電導線材(6)の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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CN201080031249.9A CN102473488B (zh) | 2009-07-10 | 2010-06-15 | 制造衬底和超导线材的方法 |
US13/381,191 US9306147B2 (en) | 2009-07-10 | 2010-06-15 | Method of producing substrate and superconducting wire |
EP10796995.8A EP2453446A4 (en) | 2009-07-10 | 2010-06-15 | METHOD FOR PRODUCING A SUBSTRATE AND SUPERCONDUCTING WIRE |
KR1020127003395A KR101685732B1 (ko) | 2009-07-10 | 2010-06-15 | 기판 및 초전도 선재의 제조 방법 |
IN528DEN2012 IN2012DN00528A (ja) | 2009-07-10 | 2010-10-07 |
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JP2009163513A JP5096422B2 (ja) | 2009-07-10 | 2009-07-10 | 基板および超電導線材の製造方法 |
JP2009-163513 | 2009-07-10 |
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EP (1) | EP2453446A4 (ja) |
JP (1) | JP5096422B2 (ja) |
KR (1) | KR101685732B1 (ja) |
CN (1) | CN102473488B (ja) |
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WO2012132128A1 (ja) * | 2011-03-28 | 2012-10-04 | 株式会社村田製作所 | 検出デバイスおよびその製造方法、センサ電極、ならびに、空隙配置構造体およびそれを用いた検出方法 |
JP2013089354A (ja) * | 2011-10-14 | 2013-05-13 | Sumitomo Electric Ind Ltd | 超電導薄膜線材用の中間層付基材とその製造方法、および超電導薄膜線材 |
WO2015033808A1 (ja) | 2013-09-04 | 2015-03-12 | 東洋鋼鈑株式会社 | 酸化物層の成膜方法、並びにエピタキシャル成長用積層基材及びその製造方法 |
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JP2005001935A (ja) | 2003-06-11 | 2005-01-06 | Sumitomo Electric Ind Ltd | 酸化物薄膜の製造方法 |
JP2006127847A (ja) * | 2004-10-27 | 2006-05-18 | Sumitomo Electric Ind Ltd | 膜形成用配向基板および超電導線材 |
JP2007165153A (ja) * | 2005-12-14 | 2007-06-28 | Internatl Superconductivity Technology Center | 厚膜テープ状re系(123)超電導体の製造方法。 |
JP2007188756A (ja) * | 2006-01-13 | 2007-07-26 | Internatl Superconductivity Technology Center | 希土類系テープ状酸化物超電導体 |
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CN1208850C (zh) * | 1999-07-23 | 2005-06-29 | 美国超导公司 | 增强的涂布高温超导体 |
KR100352976B1 (ko) * | 1999-12-24 | 2002-09-18 | 한국기계연구원 | 전기도금법에 의한 2축 집합조직을 갖는 니켈 도금층 및 그 제조방법 |
GB0010494D0 (en) * | 2000-04-28 | 2000-06-14 | Isis Innovation | Textured metal article |
US6500568B1 (en) * | 2001-06-06 | 2002-12-31 | 3M Innovative Properties Company | Biaxially textured metal substrate with palladium layer |
AU2002365423A1 (en) | 2001-07-31 | 2003-09-02 | American Superconductor Corporation | Methods and reactors for forming superconductor layers |
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US7781376B2 (en) | 2005-07-29 | 2010-08-24 | American Superconductor Corporation | High temperature superconducting wires and coils |
US7674751B2 (en) * | 2006-01-10 | 2010-03-09 | American Superconductor Corporation | Fabrication of sealed high temperature superconductor wires |
JP5074083B2 (ja) * | 2007-04-17 | 2012-11-14 | 中部電力株式会社 | エピタキシャル薄膜形成用のクラッド配向金属基板及びその製造方法 |
JP5324763B2 (ja) * | 2007-08-21 | 2013-10-23 | 中部電力株式会社 | エピタキシャル膜形成用配向基板及びエピタキシャル膜形成用配向基板の表面改質方法 |
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JP2005001935A (ja) | 2003-06-11 | 2005-01-06 | Sumitomo Electric Ind Ltd | 酸化物薄膜の製造方法 |
JP2006127847A (ja) * | 2004-10-27 | 2006-05-18 | Sumitomo Electric Ind Ltd | 膜形成用配向基板および超電導線材 |
JP2007165153A (ja) * | 2005-12-14 | 2007-06-28 | Internatl Superconductivity Technology Center | 厚膜テープ状re系(123)超電導体の製造方法。 |
JP2007188756A (ja) * | 2006-01-13 | 2007-07-26 | Internatl Superconductivity Technology Center | 希土類系テープ状酸化物超電導体 |
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IN2012DN00528A (ja) | 2015-08-21 |
JP2011018598A (ja) | 2011-01-27 |
EP2453446A4 (en) | 2015-04-22 |
JP5096422B2 (ja) | 2012-12-12 |
US9306147B2 (en) | 2016-04-05 |
KR101685732B1 (ko) | 2016-12-12 |
EP2453446A1 (en) | 2012-05-16 |
US20120108439A1 (en) | 2012-05-03 |
CN102473488A (zh) | 2012-05-23 |
CN102473488B (zh) | 2015-05-06 |
KR20120051010A (ko) | 2012-05-21 |
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