WO2015033808A1 - 酸化物層の成膜方法、並びにエピタキシャル成長用積層基材及びその製造方法 - Google Patents
酸化物層の成膜方法、並びにエピタキシャル成長用積層基材及びその製造方法 Download PDFInfo
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- C23C28/3455—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer with a refractory ceramic layer, e.g. refractory metal oxide, ZrO2, rare earth oxides or a thermal barrier system comprising at least one refractory oxide layer
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- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming superconductor layers
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Definitions
- the present invention relates to a method for forming an oxide layer, a laminated base material for epitaxial growth, and a method for manufacturing the same.
- the superconducting wire is a single layer or a plurality of layers made of an oxide layer such as cerium oxide (CeO 2 ), zirconia-added yttrium oxide (YSZ), yttrium oxide (Y 2 O 3 ), or a buffer layer on a metal substrate.
- the intermediate layer is laminated to form a superconducting wire laminated base material (epitaxial growth laminated base material), and a superconducting layer (RE123 film, RE: Y, Gd, Ho, Sm, Dy, etc.) are laminated.
- the superconducting layer is a laminated base material for superconducting wires whose surface layer is crystallized using a vapor phase growth method such as sputtering or pulsed laser deposition (PLD) or a liquid phase growth method such as coating pyrolysis (MOD). Since the oxide superconductor is formed by growing the oxide superconductor in a predetermined direction, it is effective to improve the crystal orientation of the laminated substrate for superconducting wire in order to improve the crystal orientation of the superconducting layer.
- a vapor phase growth method such as sputtering or pulsed laser deposition (PLD) or a liquid phase growth method such as coating pyrolysis (MOD). Since the oxide superconductor is formed by growing the oxide superconductor in a predetermined direction, it is effective to improve the crystal orientation of the laminated substrate for superconducting wire in order to improve the crystal orientation of the superconducting layer.
- a nickel layer is formed on a copper layer using a plating method.
- a method of manufacturing a substrate provided is disclosed, and the biaxial orientation of the intermediate layer is improved by this method.
- Patent Document 2 is a method of manufacturing an oxide superconducting thin film wire in which an intermediate layer and an oxide superconducting layer are sequentially laminated on an oriented metal substrate, and the step of forming the intermediate layer includes at least to form Y 2 O 3 layer using an electron beam evaporation method and CeO 2 layer formation step of forming a CeO 2 layer, the CeO 2 layer on by RF sputtering on the textured metal substrate Y 2 O
- a method for manufacturing an oxide superconducting thin film wire comprising a three- layer forming step is disclosed.
- the crystal orientation of the oxide layer is further improved.
- an object of the present invention is to provide a method for forming an oxide layer on a metal substrate, which can form an oxide layer with improved crystal orientation as compared with the outermost layer of the metal substrate.
- Another object of the present invention is to provide a laminated substrate for epitaxial growth that is excellent in crystal orientation of an oxide layer by utilizing the film forming method.
- the laminated substrate for epitaxial growth refers to a laminated substrate including a metal substrate and an oxide layer formed thereon, and a superconducting layer is formed thereon to produce a superconducting wire.
- the concept includes a base material for forming a photovoltaic power generation layer such as Si, a laminated base material for semiconductor for forming a semiconductor layer, and the like.
- the gist of the present invention is as follows.
- a method of forming an oxide layer on a metal substrate by RF magnetron sputtering On a crystal-oriented metal substrate having a c-axis orientation ratio of 99% or more on the outermost layer, a perpendicular at a film forming position on the metal substrate and a magnetic flux density in a vertical direction on a target at the shortest distance from the film forming position
- the said film-forming method including the process of performing RF magnetron sputtering by making the angle which the line leading to 0 point forms within 15 degrees.
- a method for producing a laminated base material for epitaxial growth comprising a metal substrate and an oxide layer formed on the metal substrate, Preparing a crystal-oriented metal substrate having a c-axis orientation ratio of 99% or more of the outermost layer; On the metal substrate, an angle formed by a perpendicular line at the film formation position on the metal substrate and a line extending to the zero point of the magnetic flux density in the vertical direction on the target at the shortest distance from the film formation position is set within 15 °.
- Performing RF magnetron sputtering to form an oxide layer The said manufacturing method containing.
- the oxide layer is, the manufacturing method of the epitaxial growth laminated substrate according to the above (4) consisting of CeO 2.
- a laminated base material for epitaxial growth including a metal substrate and an oxide layer formed on the metal substrate, The laminated substrate for epitaxial growth, wherein ⁇ c of the oxide layer satisfies a relationship of ⁇ c ⁇ ⁇ m ⁇ 0.5 ° with respect to ⁇ m of the outermost layer of the metal substrate.
- a layered substrate for epitaxial growth including a metal substrate and an oxide layer formed on the metal substrate, The laminated substrate for epitaxial growth, wherein ⁇ c of the oxide layer satisfies a relationship of ⁇ c ⁇ ⁇ m ⁇ 1.2 ° with respect to ⁇ m of the outermost layer of the metal substrate.
- an oxide layer having ⁇ improved by 0.5 ° or more and ⁇ improved by 1.2 ° or more compared to the outermost layer of the metal substrate can be formed.
- the ratio of the area deviating from a predetermined crystal orientation to some extent can be greatly reduced.
- the method for forming an oxide layer according to the present invention includes a perpendicular line at a film formation position on the metal substrate and a shortest distance from the film formation position on a crystal-oriented metal substrate having a c-axis orientation ratio of 99% or more of the outermost layer. It includes a step of performing RF magnetron sputtering with an angle formed by a line reaching a zero magnetic flux density point on the target at a distance within 15 °.
- a laminated base material for epitaxial growth such as a laminated base material for a superconducting wire to be a substrate for producing a superconducting wire by providing a superconducting layer as an upper layer can be obtained.
- the laminated base material for superconducting wires is manufactured is mainly demonstrated, it is not limited to this.
- the metal substrate requires that the c-axis orientation ratio of the outermost layer be 99% or more.
- the in-plane orientation degree ( ⁇ ) and the out-of-plane orientation degree ( ⁇ ) of the outermost layer are preferably ⁇ ⁇ 6 ° and ⁇ ⁇ 8 °, and particularly when used for a superconducting wire, ⁇ ⁇ 5 °. ⁇ ⁇ 6 ° is more preferable. Both can be determined by EBSD (Electron Back Scatter Diffraction) measurement on the outermost layer. EBSD is a technique for analyzing crystal orientation using reflected electron Kikuchi diffraction (Kikuchi pattern) generated when a sample is irradiated with an electron beam in an SEM (Scanning Electron Microscope).
- the surface of the outermost layer is irradiated with an electron beam, and information obtained at this time is azimuth information up to a depth of several tens of nm into which the electron beam penetrates, that is, azimuth information of the outermost layer.
- the outermost layer of the metal substrate is not particularly limited and can contain various metals.
- one or more selected from the group consisting of nickel, copper, silver, tungsten, vanadium, chromium, molybdenum, manganese, aluminum, iron and palladium or an alloy thereof can be included, and in particular, nickel or a nickel alloy is included. It is preferable.
- the metal substrate is composed of a plurality of layers, if the outermost layer contains nickel or a nickel alloy, the outermost layer is oxidized by the oxide layer provided on the metal substrate, and the crystal orientation is prevented from being disturbed. it can.
- a metal substrate according to the present invention includes a non-magnetic metal plate and a high-rolled metal layer (hereinafter referred to as a crystal-oriented metal layer) laminated on the non-magnetic metal plate and crystallized by heat treatment. Including.
- the high-rolled metal layer may be laminated only on one side of the nonmagnetic metal plate, or may be laminated on both sides of the metal plate.
- non-magnetic means a state that is not ferromagnetic at 77 K or higher, that is, a state in which a Curie point or a Neel point exists at 77 K or lower and becomes a paramagnetic or antiferromagnetic material at a temperature of 77 K or higher.
- a nickel alloy or an austenitic stainless steel plate is preferably used because it has a role as a reinforcing material having excellent strength.
- austenitic stainless steel is non-magnetic at room temperature, that is, the metal structure is 100% austenite ( ⁇ ) phase, but the martensite ( ⁇ ′) phase transformation point (Ms point) which is a ferromagnetic material is 77K.
- the ⁇ ′ phase which is a ferromagnetic substance, may develop at the liquid nitrogen temperature. Therefore, as a metal plate for a superconducting wire used under a liquid nitrogen temperature (77K), a plate with an Ms point designed to be 77K or less is preferably used.
- SUS316, SUS316L, SUS310, and SUS305 are used because they have a stable ⁇ phase designed to have an Ms point sufficiently lower than 77K and are generally popular and available at a relatively low cost. Etc. are preferably used.
- the thickness of these metal plates is usually applicable as long as it is 20 ⁇ m or more, and considering the thinning and strength of the superconducting wire, it is preferably 50 ⁇ m to 100 ⁇ m, but is not limited to this range. .
- the “highly rolled metal layer” means that the rolling reduction at the time of final rolling is preferably 90% or higher, more preferably 95% or higher, and the cold rolling is performed. It refers to a metal layer that has not yet been subjected to heat treatment for post-recrystallization and has retained a rolling texture developed by cold rolling. If the rolling reduction is less than 90%, the metal may not be oriented in the subsequent heat treatment.
- the highly rolled metal layer used for the metal substrate is not particularly limited, and is one or more selected from the group consisting of nickel, copper, silver, tungsten, vanadium, chromium, molybdenum, manganese, aluminum, and iron, or an alloy thereof.
- the high-rolled metal layer may contain a trace amount of elements of about 1% or less.
- examples of such an additive element include one or more elements selected from Ag, Sn, Zn, Zr, O, N, and the like.
- a metal foil is preferably used as the highly rolled metal layer.
- Applicable metal foils are generally available.
- copper foil high-rolled copper foil (HA foil (trade name)) manufactured by JX Nippon Mining & Metals, Hitachi Cable, Ltd. ) High rolled copper foil (HX foil (trade name)) and the like.
- the thickness of the high-rolled metal layer is usually preferably in the range of 7 ⁇ m to 70 ⁇ m in order to ensure the strength of the high-rolled metal layer itself and improve the workability when processing the superconducting wire later.
- the surface activated bonding method is preferably used for the lamination.
- the surface activated bonding method the surface adsorption layer and the surface oxide film are removed and activated by performing sputter etching on the surfaces of the nonmagnetic metal plate and the high-rolled metal layer, and then activated 2 The two surfaces are joined by cold pressure welding.
- a non-magnetic metal plate and a highly rolled metal layer are prepared as long coils having a width of 150 mm to 600 mm, and are respectively installed in the recoiler portion of the surface activated bonding apparatus.
- the non-magnetic metal plate and the high-rolled metal layer conveyed from each recoiler are continuously conveyed to the surface activation treatment step, where two surfaces to be joined are activated in advance and then cold-welded.
- a non-magnetic metal plate having a joint surface and a high-rolled metal layer are each grounded as one electrode, and an alternating current of 1 to 50 MHz is applied between the other electrodes that are insulated and supported. Glow discharge is generated and sputter etching is performed.
- the inert gas used at that time argon, neon, xenon, krypton, or a mixed gas containing at least one of these can be used.
- the surface adsorbing layer may be removed and the surface oxide film may be further removed by sputtering the surface to which the non-magnetic metal plate and the high-rolled metal layer are joined with an inert gas.
- the surfaces to be joined are activated by.
- the grounded electrode is in the form of a cooling roll to prevent the temperature of each conveying material from rising.
- the press-contact roll process continuously conveys to the press-contact roll process, and presses the activated surfaces.
- the surface subjected to the activation treatment is re-oxidized during the transfer and adversely affects the adhesion.
- the laminated body brought into close contact through the pressure contact process is conveyed to the winding process, and is wound there.
- the adsorbate on the bonding surface is completely removed, but the surface oxide layer need not be completely removed. Even if an oxide layer remains on the entire surface, the reduction ratio is increased in the joining process, and the base is exposed by friction on the joining surface, thereby ensuring the bondability between the non-magnetic metal plate and the highly rolled metal layer. Because it can.
- the oxide layer is completely removed by dry etching, high plasma output or long-time etching is required, and the temperature of the material increases.
- the sputter etching process when the temperature rises above the recrystallization start temperature of the metal in the high-rolled metal layer, the high-rolled metal layer recrystallizes, and the high-rolled metal layer crystallizes before joining. Become.
- strain is introduced into the highly rolled metal layer, and the biaxial crystal orientation of the highly rolled metal layer is deteriorated. For this reason, in the sputter etching process, it is necessary to keep the temperature of the highly rolled metal layer below the metal recrystallization start temperature.
- the temperature of the copper foil is kept below 150 ° C.
- the metal structure of the high-rolled metal layer is maintained at a temperature of 100 ° C. or lower and the rolled texture is maintained.
- the high temperature during pressure welding is increased.
- the high temperature during pressure welding is increased.
- Contact with the rolled metal layer raises the temperature of the high-rolled metal layer, and the high-rolled metal layer may be recrystallized at the same time as rolling, which may deteriorate the biaxial crystal orientation.
- the copper foil may be held at less than 150 ° C., preferably from room temperature to 100 ° C.
- the degree of vacuum at this time is preferably higher in order to prevent re-adsorbed substances on the surface, but may be in the range of 10 ⁇ 5 Pa to 10 ⁇ 2 Pa.
- the rolling roll bonding is performed in a non-oxidizing atmosphere, for example, an inert gas atmosphere such as Ar. It is also preferable to do.
- the pressing by the rolling roll is performed in order to ensure the adhesion area of the bonding interface, and to partially peel the surface oxide film layer by friction occurring at the bonding interface at the time of rolling down, to expose the substrate, and it is preferable to add 300 MPa or more, In particular, since the nonmagnetic metal plate and the highly rolled metal layer are both hard materials, pressurization at 600 MPa to 1.5 GPa is preferable.
- the pressure may be higher than this, and it has been confirmed that the crystal orientation does not deteriorate after the subsequent heat treatment up to a reduction rate of 30%, but the pressure is preferably reduced to a reduction rate of less than 5%. If the rolling reduction exceeds 30%, cracks may occur on the surface of the high-rolled metal layer, and the crystal orientation of the crystal-oriented metal layer after rolling and heat treatment may deteriorate.
- heat treatment is performed to crystallize the highly rolled metal layer to obtain a crystallographically oriented metal layer.
- the heat treatment is performed at a temperature of 150 ° C. or higher, for example.
- the heat treatment time varies depending on the temperature. For example, if it is 400 ° C., it may be 1 hour to 10 hours, and if it is 700 ° C. or higher, it may be held for several seconds to 5 minutes. If the heat treatment temperature is too high, the crystal orientation metal layer is liable to cause secondary recrystallization, and the crystal orientation deteriorates. Therefore, the heat treatment is preferably performed at 150 ° C. or more and 1000 ° C. or less.
- stepwise, after heat treatment at a low temperature, heat treatment at a high temperature is performed, so that the crystal orientation and surface roughness of the crystal orientation metal layer and the protective layer formed thereafter are improved.
- the metal substrate in this invention forms a protective layer further on a crystal orientation metal layer.
- the protective layer is the outermost layer of the metal substrate.
- the protective layer is not particularly limited, and includes nickel, palladium, silver, or the like, or an alloy thereof, and preferably includes nickel or a nickel alloy.
- the protective layer containing nickel is excellent in oxidation resistance, and the presence of the protective layer produces a metal oxide film contained in the crystal orientation metal layer when an oxide layer such as CeO 2 is formed thereon. Thus, the crystal orientation can be prevented from being lost.
- an element contained in an alloy of nickel, palladium, or silver those having reduced magnetic properties are preferable, and examples thereof include elements such as Cu, Sn, W, and Cr. Further, impurities may be included as long as the crystal orientation is not adversely affected.
- the thickness of the protective layer is too thin, for example, in the production of a superconducting wire, when the oxide layer and the superconducting layer are laminated thereon, the metal in the crystal orientation metal layer diffuses to the surface of the protective layer. There is a possibility of oxidation, and if it is too thick, the crystal orientation of the protective layer is lost, and the plating strain is also increased. Specifically, it is preferably in the range of 1 ⁇ m to 5 ⁇ m.
- the protective layer inherits the crystal orientation of the crystal orientation metal layer on the crystal orientation metal layer by plating a laminate of the nonmagnetic metal plate and the crystal orientation metal layer biaxially crystal oriented by heat treatment.
- a protective layer can be formed.
- the plating treatment can be performed by appropriately adopting conditions that reduce the plating strain of the protective layer.
- the plating strain refers to the degree of strain (strain) generated in the plating film when plating is applied to a base such as a metal plate.
- a layer made of nickel is formed as the protective layer, it can be performed using a Watt bath or a sulfamic acid bath known conventionally as a plating bath.
- the sulfamic acid bath is preferably used because it easily reduces the plating strain of the protective layer.
- a plating bath composition is as follows, it is not limited to this. (Watt bath) Nickel sulfate 200-300g / l Nickel chloride 30-60g / l Boric acid 30-40g / l pH 4-5 Bath temperature 40-60 °C (Sulfamic acid bath) Nickel sulfamate 200-600g / l Nickel chloride 0-15g / l Boric acid 30-40g / l Additive appropriate amount pH 3.5-4.5 Bath temperature 40-70 ° C
- the current density at the time of performing the plating process is not particularly limited, and is appropriately set in consideration of the balance with the time required for the plating process. Specifically, for example, when a plating film of 2 ⁇ m or more is formed as a protective layer, the time required for the plating process becomes long if the current density is low, and the line speed is slowed down in order to secure the time.
- the current density is preferably set to 10 A / dm 2 or more because the properties may be lowered or the control of the plating may be difficult.
- the upper limit of the current density varies depending on the type of plating bath and is not particularly limited.
- it is 25 A / dm 2 or less for a watt bath and 35 A / dm 2 or less for a sulfamic acid bath. Is preferred. Generally, when the current density exceeds 35 A / dm 2 , good crystal orientation may not be obtained due to so-called plating burn.
- the surface of the protective layer Since there may be oxides on the surface of the protective layer, the oxides are removed by heat treatment, and micropits may be generated on the surface depending on the plating conditions, etc.
- the surface can be smoothed by averaging by heat treatment.
- the heat treatment of the protective layer is preferably performed at a temperature of 650 ° C. to 1000 ° C. for 5 minutes to 30 minutes in a reducing atmosphere of about 1 Pa such as Ar gas containing 3 mol% of H 2 .
- the thickness of the metal substrate varies depending on the final use of the laminated substrate for epitaxial growth and is not particularly limited, but is preferably 50 ⁇ m to 200 ⁇ m, for example. This is because if the thickness is less than 50 ⁇ m, the mechanical strength of the substrate cannot be ensured, and if the thickness is greater than 200 ⁇ m, for example, workability when processing into a superconducting wire cannot be ensured.
- a non-magnetic metal plate and a high-rolled metal layer are provided as necessary.
- a treatment for reducing the surface roughness Ra of the highly rolled metal layer may be performed.
- methods such as rolling with a rolling roll, buff polishing, electrolytic polishing, and electrolytic abrasive polishing can be used.
- the surface roughness Ra is, for example, 20 nm or less, preferably 10 nm or less. Is desirable.
- a laminated substrate for epitaxial growth can be manufactured by performing RF magnetron sputtering on the metal substrate having the above crystal orientation to form an oxide layer.
- the composition of the oxide layer formed on the metal substrate is not particularly limited, but for superconducting wires, for example, an oxide having a fluorite type, pyrochlore type, rock salt type or perovskite type crystal structure is preferred, specifically , CeO 2 , MgO, SrTiO 3 , La 2 O 3 , YSZ, Y 2 O 3 and the like. These oxides play a role of reducing the difference in crystal constant and crystal orientation between the metal substrate and the superconducting layer and preventing diffusion of metal atoms from the metal substrate to the superconducting layer.
- an oxide having a fluorite structure such as CeO 2 is an oxide having a very good crystal orientation by the film forming method of the present invention when the outermost layer of the metal substrate is in a biaxial crystal orientation state containing Ni. Since a layer can be formed, it is preferably used.
- the thickness of the oxide layer is preferably in the range of 50 nm to 300 nm, but is not limited thereto.
- the above oxide is used as a target, a magnet is installed on the back side of the target to generate a magnetic field, gas ion atoms collide with the target surface, and the secondary electrons that are knocked out are captured by Lorentz force to generate a cyclotron. It promotes the ionization of inert gas by movement. Since negative ions and secondary electrons are captured by the magnetic field, the temperature rise of the metal substrate is suppressed, gas ionization is promoted by the captured electrons, and the deposition rate can be increased.
- the perpendicular at the film formation position 20a on the metal substrate 20 and the target 10 at the shortest distance from the film formation position 20a is performed with the angle ⁇ formed by the line extending to the upper vertical magnetic flux density 0 point 10a within 15 °.
- the vertical magnetic flux density 0 point is a point where the vertical magnetic flux density is 0, which is formed by the magnetic field lines from the magnet installed on the back surface of the target, and the erosion region (the target is eroded) around this point. Region) is formed.
- the crystal orientation and grain size of the outermost layer of the metal substrate as the lower layer are inherited by the oxide layer, and ⁇ is 0.5 ° or more and ⁇ is 1.2 °. An improved oxide layer can be obtained.
- the angle ⁇ is within 13.5 °, whereby ⁇ and ⁇ of the oxide layer can be improved by 1 ° or more and 2 ° or more, respectively, compared with ⁇ and ⁇ of the outermost layer of the metal substrate.
- the crystal orientation of the resulting oxide layer is such that the c-axis orientation ratio is 99% or more, ⁇ ⁇ 5.5 °, preferably ⁇ ⁇ 4.5 °, more preferably ⁇ ⁇ 4 °, and ⁇ ⁇ 6.8 °, preferably ⁇ ⁇ 4.8 °, more preferably ⁇ ⁇ 4 °.
- the ratio of the area where the crystal orientation of the oxide layer deviates from a predetermined crystal orientation to some extent can be reduced as compared with the conventional case.
- “the ratio of the area deviating from the predetermined crystal orientation to some extent” means that the angle difference from the predetermined crystal orientation (for example, (001) [110]) is to some extent when observed by the EBSD method ( For example, the ratio of the area of the crystal that is 4 ° or more.
- the reason why the crystal orientation of the upper oxide layer is improved as compared with the lower layer is not clear, but by making the angle ⁇ within 15 °, oxygen ions generated on the surface of the oxide target are formed. By colliding with the oxide layer in the film, the oxide layer is formed in a state in which lattice defects such as oxygen vacancies are unlikely to occur, so there is a possibility that ⁇ and ⁇ of the oxide layer may decrease.
- RF magnetron sputtering is preferably performed in an Ar gas atmosphere, but other inert gases such as helium, neon, and krypton may be used.
- the gas pressure is not particularly limited, but is preferably in the range of 0.01 Pa to 6 Pa, for example. Furthermore, it is preferable to set the sputtering conditions so that the deposition rate of the oxide layer is in the range of 1 nm / min to 30 nm / min.
- the temperature of the metal substrate when performing RF magnetron sputtering is preferably controlled to be 350 ° C. or higher and lower than 600 ° C., particularly 400 ° C. or higher and lower than 550 ° C.
- the c-axis orientation ratio of the oxide layer can be favorably maintained.
- both the target 10 and the metal substrate 20 are disk-shaped.
- the perpendicular line at the film formation position on the metal substrate and the target at the shortest distance from the film formation position As long as the condition that the angle formed by the line leading to the zero magnetic flux density in the vertical direction is within 15 ° is satisfied, various shapes are applicable.
- both the target and the metal substrate can be formed into a long plate shape.
- a method of moving the metal substrate at the same time to form an oxide layer on the entire surface of the metal substrate can be employed.
- a plurality of targets having a disk shape or a quadrangular shape can be arranged along the metal substrate.
- a superconducting wire can be manufactured by sequentially laminating an intermediate layer and a superconducting layer in accordance with a conventional method on the superconducting wire laminated base material (epitaxial growth laminated base material) obtained as described above. Specifically, one or a plurality of intermediate layers containing SrTiO 3 , MgO, La 2 O 3 , YSZ, Y 2 O 3 and the like are epitaxially formed on the outermost layer of the superconducting wire laminated base material, and On top of this, a superconducting compound layer such as REBaCuO (RE: Y, Gd, Ho, Sm, Dy, etc.) is sputtered, EB vapor-deposited, MOD (Metal Organic Deposition), PLD (pulsed laser vapor deposition; A superconducting wire can be obtained by forming a film by a method such as a pulse laser deposition (MOCVD) method or a MOCVD (Metal Organic Chemical Vapor Deposition) method. Further,
- the film formation method for forming the intermediate layer is not limited to the RF magnetron sputtering method, and for example, EBD (electron It may be formed by a line beam evaporation (Electron Beam Deposition) method, a PLD method, a thermal evaporation method, or the like.
- EBD electron It may be formed by a line beam evaporation (Electron Beam Deposition) method, a PLD method, a thermal evaporation method, or the like.
- SUS316L (thickness: 100 ⁇ m) was used as the nonmagnetic metal plate, and copper foil (thickness: 48 ⁇ m) rolled at a reduction ratio of 96.8% was used as the high-rolling metal layer.
- SUS316L and copper foil were surface activated bonded at room temperature using a surface activated bonding apparatus to form a laminate of SUS316L and copper foil.
- surface activated bonding sputter etching is performed under conditions of 0.1 Pa, plasma output of 200 W, and sputter irradiation time on the bonding surface of 20 seconds, and the SUS316L and the adsorbate layer on the copper foil are completely formed. Removed.
- the pressurization with a rolling roll was 600 MPa.
- the copper foil side surface of the laminated material was polished to a surface roughness Ra of 20 nm or less, and then maintained at a temperature of 250 ° C. for 5 minutes in a non-oxidizing atmosphere of Ar. Then, heat treatment was performed under the condition that the temperature was maintained at 850 ° C. for 5 minutes, and the copper foil was biaxially crystallized to form a crystal-oriented metal layer.
- the laminated material is used as a cathode, nickel plating is performed on the crystal orientation metal layer made of copper foil, the nickel plating layer is formed as a protective layer, and a ⁇ 50 mm metal substrate made of three layers of SUS / Cu / Ni is formed.
- the composition of the plating bath is as follows. The plating thickness was 2.5 ⁇ m, the plating bath temperature was set to 60 ° C., and the pH of the plating bath was set to pH 4.
- the ratio of the c-axis orientation ratio, ⁇ , ⁇ , and crystal orientation of the obtained metal substrate deviated from (001) [100] by 4 ° or more and less than 6 ° and the proportion of the area deviated by 6 ° or more are represented by X
- the area ratio was 20.8%, and the area ratio shifted by 6 ° or more was 4.8%.
- the surface of the metal substrate was subjected to a heat treatment in a reducing atmosphere of 1 Pa made of Ar gas containing 3 mol% of H 2 at a temperature of 700 ° C. for 20 minutes to remove Ni oxide on the surface.
- CeO 2 is prepared as a target, and the metal substrate surface and the target surface are placed in parallel as shown in FIGS. 1 and 2, and an oxide layer made of CeO 2 is formed on the metal substrate by RF magnetron sputtering.
- a laminated base material for epitaxial growth was manufactured by forming a film.
- the distance D1 from the target 10 to the surface including the metal substrate 20 is set to 40 mm, 60 mm, or 80 mm.
- the center-to-center distance D2 between the target 10 and the metal substrate 20 is 30 mm, and the diameter D5 of the metal substrate 20 is 50 mm.
- the distance D4 from the peripheral edge of the target 10 to the magnetic flux density 0 point 10a in the vertical direction was 9 mm.
- RF magnetron sputtering was performed in an Ar gas, 1 Pa atmosphere, with the substrate temperature set to 400 ° C.
- the thickness of the formed oxide layer was about 200 nm at the center of the metal substrate.
- FIG. 2 shows film forming positions a to i to be measured on the epitaxial growth laminated base material.
- the distance D3 from the center of the target 10 to the film forming position a in plan view was 10 mm, and a to i were all equally spaced.
- b ′ and c ′ have the same distance from the center of the target 10 in plan view as b and c, respectively.
- the axis is rotated so that ⁇ 111> is aligned with ND [001] in the sample coordinate system.
- Ratio of area where crystal orientation is shifted Analyzed using EBSD and crystal orientation analysis software, the ratio of area where crystal orientation is shifted per 1 mm 2 was determined. Specifically, in the measurement of the protective layer (Ni plating layer) of the metal substrate, the ratio of the area where the crystal orientation is shifted by 4 ° or more and less than 6 ° from (001) [100] and the area where the crystal orientation is shifted by 6 ° or more In the measurement of the oxide layer (CeO 2 layer), the ratio of the area where the crystal orientation deviated from (001) [110] by 4 ° or more and less than 6 ° and the ratio of the area deviated by 6 ° or more were obtained. .
- Orientation is set to (001) [100] in the measurement of the protective layer of the metal substrate, and set to (001) [110] in the measurement of the oxide layer.
- the range of the inclination from the direction was specified, and the area ratio in each range was calculated.
- an angle ⁇ formed by a perpendicular line at the film forming position 20a on the metal substrate 20 and a line extending from the film forming position 20a to the perpendicular magnetic flux density 0 point 10a on the target 10 at the shortest distance is defined.
- ⁇ was improved by 1 ° or more.
- ⁇ was also improved by 1.2 ° or more.
- a great improvement in ⁇ of 2 ° or more was observed.
- the ratio of the area deviating from a predetermined crystal orientation is greatly reduced by setting the angle ⁇ within 15 °.
- the c-axis orientation ratio of the oxide layer was 99% or more at any of the film formation positions a to i.
- an oxide layer (lower layer) made of CeO 2 is formed on the metal substrate, and another oxide layer (upper layer) made of YSZ is further RF-bonded to the lower layer.
- a laminated base material for epitaxial growth was produced in the same manner as in the above example except that the film was formed by magnetron sputtering, and the crystal orientation at the film forming position where the angle ⁇ was 8.53 ° was evaluated. The results are shown in Table 2.
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Abstract
Description
最表層のc軸配向率が99%以上である結晶配向した金属基板上に、前記金属基板上の成膜位置における垂線と、前記成膜位置から最短距離にあるターゲット上の垂直方向の磁束密度0地点へ至る線とが成す角度を15°以内にしてRFマグネトロンスパッタリングを行う工程を含む前記成膜方法。
最表層のc軸配向率が99%以上である結晶配向した金属基板を準備する工程と、
前記金属基板上に、前記金属基板上の成膜位置における垂線と、前記成膜位置から最短距離にあるターゲット上の垂直方向の磁束密度0地点へ至る線とが成す角度を15°以内にしてRFマグネトロンスパッタリングを行い、酸化物層を形成する工程と、
を含む前記製造方法。
前記酸化物層のΔφcが、前記金属基板の最表層のΔφmに対し、Δφc≦Δφm-0.5°の関係を満たす前記エピタキシャル成長用積層基材。
前記酸化物層のΔωcが、前記金属基板の最表層のΔωmに対し、Δωc≦Δωm-1.2°の関係を満たす前記エピタキシャル成長用積層基材。
金属基板は、最表層のc軸配向率が99%以上であることを要する。c軸配向率は、X線回折のθ/2θ測定での(200)面の回折ピーク強度率から求められ、(200)面が金属基板の表面と垂直になっている割合を示している。具体的には、c軸配向率(%)=I(200)/ΣI(hkl)×100(%)により求められる。また、最表層の面内配向度(Δφ)及び面外配向度(Δω)については、Δφ≦6°、Δω≦8°であることが好ましく、特に超電導線材に用いる場合は、Δφ≦5°、Δω≦6°であることがより好ましい。いずれも、最表層のEBSD(Electron Back Scatter Diffraction:電子後方散乱回折)測定により求めることができる。EBSDとは、SEM(Scanning Electron Microscope:走査電子顕微鏡)内で試料に電子線を照射したときに生じる反射電子菊池線回折(菊池パターン)を利用して結晶方位を解析する技術である。通常、電子線は最表層表面に照射され、このとき得られる情報は電子線が侵入する数十nmの深さまでの方位情報、すなわち最表層の方位情報である。
(ワット浴)
硫酸ニッケル 200~300g/l
塩化ニッケル 30~60g/l
ホウ酸 30~40g/l
pH 4~5
浴温 40~60℃
(スルファミン酸浴)
スルファミン酸ニッケル 200~600g/l
塩化ニッケル 0~15g/l
ホウ酸 30~40g/l
添加剤 適量
pH 3.5~4.5
浴温 40~70℃
非磁性の金属板としてSUS316L(厚さ100μm)を用い、高圧延金属層として、圧下率96.8%で圧延された銅箔(厚さ48μm)を用いた。SUS316Lと銅箔とを、表面活性化接合装置を用いて常温で表面活性化接合し、SUS316Lと銅箔の積層材を形成した。表面活性化接合においては、スパッタエッチングを、0.1Pa下で、プラズマ出力を200W、接合面へのスパッタ照射時間を20秒の条件で実施し、SUS316L及び銅箔上の吸着物層を完全に除去した。また、圧延ロールでの加圧は600MPaとした。
(スルファミン酸浴)
スルファミン酸ニッケル 450g/l
塩化ニッケル 5g/l
ホウ酸 30g/l
添加剤 5ml/l
EBSD(日本電子株式会社SEM-840及び株式会社TSLソリューションズDigiView、以下同じ)及び結晶方位解析ソフト(EDAX社OIM Data Collection及びOIM Analysis、以下同じ)を用い、「Crystal Direction」の<111>∥NDを用いて以下の方法で解析することにより得た。
EBSD及び結晶方位解析ソフトを用い、「Crystal Direction」の<001>∥NDを用いて以下の方法で解析することにより得た。
EBSD及び結晶方位解析ソフトを用いて解析し、1mm2当たりの結晶方位がずれている面積の割合を求めた。具体的には、金属基板の保護層(Niめっき層)の測定においては結晶方位が(001)[100]から4°以上6°未満ずれている面積の割合及び6°以上ずれている面積の割合を、酸化物層(CeO2層)の測定においては結晶方位が(001)[110]から4°以上6°未満ずれている面積の割合及び6°以上ずれている面積の割合を求めた。
上記の金属基板20に代えて、金属基板上にCeO2からなる酸化物層(下層)を形成したものを用い、この下層に対して、さらにYSZからなる別の酸化物層(上層)をRFマグネトロンスパッタリングにより成膜した以外は、上記実施例と同様にしてエピタキシャル成長用積層基材を製造し、角度αが8.53°となる成膜位置における結晶配向性を評価した。その結果を表2に示す。
10a 垂直方向の磁束密度0地点
20 金属基板
20a 成膜位置
Claims (8)
- RFマグネトロンスパッタ法により金属基板上へ酸化物層を成膜する方法であって、
最表層のc軸配向率が99%以上である結晶配向した金属基板上に、前記金属基板上の成膜位置における垂線と、前記成膜位置から最短距離にあるターゲット上の垂直方向の磁束密度0地点へ至る線とが成す角度を15°以内にしてRFマグネトロンスパッタリングを行う工程を含む前記成膜方法。 - 前記最表層のΔφが、Δφ≦6°である請求項1に記載の酸化物層の成膜方法。
- 前記RFマグネトロンスパッタリングが、金属基板の温度を350℃以上600℃未満として行われる請求項1又は2に記載の酸化物層の成膜方法。
- 金属基板と、前記金属基板の上に形成された酸化物層とを含むエピタキシャル成長用積層基材の製造方法であって、
最表層のc軸配向率が99%以上である結晶配向した金属基板を準備する工程と、
前記金属基板上に、前記金属基板上の成膜位置における垂線と、前記成膜位置から最短距離にあるターゲット上の垂直方向の磁束密度0地点へ至る線とが成す角度を15°以内にしてRFマグネトロンスパッタリングを行い、酸化物層を形成する工程と、
を含む前記製造方法。 - 前記酸化物層が、CeO2からなる請求項4に記載のエピタキシャル成長用積層基材の製造方法。
- 前記金属基板の最表層が、Ni又はNi合金からなる請求項4又は5に記載のエピタキシャル成長用積層基材の製造方法。
- 金属基板と、前記金属基板の上に形成された酸化物層とを含むエピタキシャル成長用積層基材であって、
前記酸化物層のΔφcが、前記金属基板の最表層のΔφmに対し、Δφc≦Δφm-0.5°の関係を満たす前記エピタキシャル成長用積層基材。 - 金属基板と、前記金属基板の上に形成された酸化物層とを含むエピタキシャル成長用積層基材であって、
前記酸化物層のΔωcが、前記金属基板の最表層のΔωmに対し、Δωc≦Δωm-1.2°の関係を満たす前記エピタキシャル成長用積層基材。
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EP3042978A4 (en) | 2017-05-03 |
US20160194750A1 (en) | 2016-07-07 |
JPWO2015033808A1 (ja) | 2017-03-02 |
JP6530713B2 (ja) | 2019-06-12 |
US10174420B2 (en) | 2019-01-08 |
EP3042978B1 (en) | 2020-07-29 |
EP3042978A1 (en) | 2016-07-13 |
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