WO2010110535A2 - Procédé de modélisation de la courbe de distribution de réflectance, système de mesure d'épaisseur et réflectomètre de mesure d'épaisseur utilisant ce système - Google Patents

Procédé de modélisation de la courbe de distribution de réflectance, système de mesure d'épaisseur et réflectomètre de mesure d'épaisseur utilisant ce système Download PDF

Info

Publication number
WO2010110535A2
WO2010110535A2 PCT/KR2010/001131 KR2010001131W WO2010110535A2 WO 2010110535 A2 WO2010110535 A2 WO 2010110535A2 KR 2010001131 W KR2010001131 W KR 2010001131W WO 2010110535 A2 WO2010110535 A2 WO 2010110535A2
Authority
WO
WIPO (PCT)
Prior art keywords
distribution curve
thin film
intensity
film layer
reflectance
Prior art date
Application number
PCT/KR2010/001131
Other languages
English (en)
Korean (ko)
Other versions
WO2010110535A3 (fr
Inventor
박희재
안우정
김성룡
Original Assignee
에스엔유 프리시젼 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에스엔유 프리시젼 주식회사 filed Critical 에스엔유 프리시젼 주식회사
Priority to JP2012501920A priority Critical patent/JP5424143B2/ja
Priority to CN201080013587XA priority patent/CN102362146B/zh
Publication of WO2010110535A2 publication Critical patent/WO2010110535A2/fr
Publication of WO2010110535A3 publication Critical patent/WO2010110535A3/fr

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0608—Height gauges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02001—Interferometers characterised by controlling or generating intrinsic radiation properties
    • G01B9/02012—Interferometers characterised by controlling or generating intrinsic radiation properties using temporal intensity variation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/56—Cameras or camera modules comprising electronic image sensors; Control thereof provided with illuminating means

Definitions

  • the present invention relates to a method for modeling a reflection distribution curve, a thickness measuring method using the same, and a thickness measuring reflectometer. More particularly, the present invention relates to a thin film layer for light bandpassed using an integrated method within a predetermined wavelength band. The present invention relates to a method of modeling a reflectance distribution curve improved from a method of modeling a reflectance distribution curve, a thickness measuring method using the same, and a thickness measuring reflectometer.
  • Transparent thin film layer which is widely used in LCD and semiconductor fields, has a great influence on the post-process due to its thickness distribution. Therefore, a system that can monitor the thickness of the thin film layer is required throughout the industry. For the thickness measurement of the thin film layer, interferometers and reflectometers, which are non-contact measuring devices, are widely used.
  • a conventional reflectometer white light is irradiated onto a thin film layer, and light reflected by the thin film layer is spectroscopically obtained using a spectrometer to obtain intensity of light for each individual wavelength included in the white light. This intensity data is used to obtain the reflectivity of the thin film layer, and finally a reflectivity distribution curve representing the reflectance change with respect to the wavelength is completed.
  • the thickness of the thin film layer In order to determine the thickness of the thin film layer, a method of comparing the reflectance distribution curve measured as described above and the reflectance distribution modeled by the equation has been utilized. First, various thin film layers having different thicknesses are assumed, and a reflectance distribution curve is generated for each thin film layer by using an equation. Then, the modeled reflectivity distribution curve that most closely matches the measured reflectivity distribution curve among the plurality of modeled reflectance distribution curves was selected, and the thickness corresponding to the modeled reflectance distribution curve was determined as the thickness of the thin film layer.
  • the reflectance distribution curve obtained by the actual measurement shows a large error with the reflectance distribution curve generated by the conventional modeling method, and is inconsistent. Therefore, there is a problem in that the thickness of the thin film layer cannot be determined using a conventional modeling method.
  • an object of the present invention is to solve such a conventional problem, and in the case of light that is bandpassed and incident to a predetermined wavelength band, light reflected by the thin film layer using a method of integrating in the wavelength band.
  • modeling the reflectance distribution curve of by providing a method of modeling the reflectivity distribution curve that can mathematically model the reflectance distribution curve substantially close to the reflectance distribution curve obtained by the actual measurement, the thickness measurement method and the thickness measurement reflectometer using the same have.
  • the wavelength of light A reflectance distribution curve providing a reflectance distribution curve representing a reflectance distribution of the thin film layer according to a change of?
  • an intensity distribution curve representing an intensity distribution of light in a predetermined wavelength band is provided around the specific wavelength, and the intensity distribution curve is integrated within the wavelength band.
  • An input intensity setting step of setting an input intensity of the specific wavelength An output intensity setting step of integrating a complex intensity distribution curve combining the reflection distribution curve and the intensity distribution curve within the wavelength band and setting the output intensity of the specific wavelength;
  • Generating step characterized in that it comprises a.
  • the thickness measurement method of the present invention in order to achieve the above object, in the thickness measurement method of the thin film layer laminated on the base layer using a white light reflectometer, assuming a plurality of sample thin film layers having different thickness, the reflectivity A modeling step of preparing an integrated reflection distribution curve corresponding to each sample thin film layer using a distribution curve modeling method; Acquiring a measurement reflection distribution curve of the thin film layer according to a change in wavelength of light by irradiating white light toward the thin film layer; A comparison step of comparing a plurality of integral reflectance distribution curves with the measured reflectance distribution curves respectively; And selecting the integral reflection distribution curve that substantially matches the measurement reflection distribution curve, and determining a thickness corresponding to the integration reflection distribution curve as the thickness of the thin film layer.
  • the thickness measurement reflectometer of the present invention to achieve the above object, the light source for emitting white light; A linear variable filter bandpassing the incident white light with respect to a specific wavelength, passing a predetermined wavelength band around the specific wavelength, and changing a specific wavelength that can pass along the length direction; A filter transfer unit reciprocating the linear variable filter along the length direction; An optical system irradiating the light passing through the linear variable filter toward the thin film layer and receiving the light reflected by the thin film layer or the base layer supporting the thin film layer; And a camera unit for irradiating the reflected light passing through the optical system to form an image.
  • the actual reflection by modeling the reflection distribution curve of the light reflected by the thin film layer using a method of integrating the bandpass light in the wavelength band, It is possible to mathematically model the reflectivity distribution curve substantially close to the reflectance distribution curve obtained by.
  • the thickness of the thin film layer can be measured more precisely by passing only light having a wavelength band at the center of a specific wavelength to be measured without noise such as light having an undesired ambient wavelength. have.
  • the thickness measuring reflectometer of the present invention since the surface shape representing the thickness difference of the thin film layer as well as the relative thickness of the thin film layer can be obtained simultaneously, comprehensive information on the thin film layer can be calculated and visualized.
  • FIG. 1 is a schematic diagram of a thickness measuring reflectometer according to an embodiment of the present invention.
  • FIG. 2 illustrates intensity distribution curves of light bandpassed by the linear variable filter of the thickness measuring reflectometer of FIG.
  • FIG. 3 is a view schematically illustrating a thickness measuring method according to an embodiment of the present invention
  • FIG. 4 is a view schematically showing a reflection path of light incident on a thin film layer
  • FIG. 5 is a view schematically illustrating a reflectance distribution curve modeling method according to an embodiment of the present invention.
  • FIG. 6 is a diagram for comparing a reflection curve distribution curve, an integration reflection curve, and a reflection curve according to a conventional modeling method.
  • FIG. 7 is a diagram showing an example of the surface shape of the measured thin film layer.
  • optical system 150 camera unit
  • FIG. 1 is a schematic diagram of a thickness measuring reflectometer according to an exemplary embodiment of the present invention
  • FIG. 2 is a diagram showing intensity distribution curves of light bandpassed by a linear variable filter of the thickness measuring reflectometer of FIG. 7 is a diagram showing an example of the surface shape of the measured thin film layer.
  • the thickness measuring reflectometer 100 of the present embodiment includes a light source 110, a linear variable filter 120, a filter transfer unit 130, a condenser lens 160, , An optical system 140, and a camera unit 150.
  • the light source 110 emits white light and in this embodiment, halogen lighting is used.
  • the light L in the visible light wavelength band of 380 nm to 800 nm is output from the light source 110.
  • illumination of various sources other than halogen lighting may be used.
  • the linear variable filter 120 is a combination of a high-pass filter and a low-pass filter.
  • the linear variable filter 120 When white light is incident, the linear variable filter 120 has a predetermined wavelength band 32 around a specific wavelength 31. Pass only the light of).
  • the specific wavelength 31 that can pass through is also changed. For example, as shown in FIG. 2, when light is irradiated to the leftmost region of the linear variable filter 120, only light having a predetermined wavelength band 32 is passed through a specific wavelength 31 of 500 nm. The same intensity distribution curve 30 is shown.
  • the area where the light L is irradiated is changed to the right side, only light having a predetermined wavelength band 32 passes around the specific wavelength 31 of 550 nm, 600 nm, 650 nm, and 700 nm, respectively.
  • the filter transfer unit 130 reciprocates the linear variable filter 120 in the longitudinal direction, thereby changing the area irradiated with light from the linear variable filter 120.
  • the filter transfer unit 130 may be composed of a rotating motor, a ball screw, a combination unit of a linear motion guide or a linear motor unit, etc., which will be known to those skilled in the art, and thus, detailed description thereof will be omitted.
  • the condenser lens 160 is disposed between the light source 110 and the linear variable filter 120 and condenses the light L incident from the light source 110 and emits the light L toward the linear variable filter 120. The diameter of the light passing through the linear variable filter 120 is reduced by the condenser lens 160.
  • the linear variable filter 120 is disposed between the light source 110 and the optical system 140 to band pass the light L.
  • the linear variable filter 120 is disposed between the optical system 140 and the camera unit 150 to pass the light L reflected by the thin film layer 11, the light passing through the linear variable filter 120 may be Since the diameter of L) is large, not only the wavelength band 32 in the center of a specific wavelength 31 but also the noise of the peripheral wavelength is detected as a signal.
  • the light L passes through the linear variable filter 120 at a stage where the diameter of the light is small, only light having the wavelength band 32 around the specific wavelength 31 desired without noise passes.
  • the optical system 140 irradiates the light L passing through the linear variable filter 120 toward the thin film layer 11 stacked on the base layer 10 and is reflected by the thin film layer 11 or the base layer 10. Is incident to the optical system 140 again.
  • the optical system 140 includes various mirrors, lenses, and optical components, such as a reflection mirror that reflects incident light, a beam splitter that splits incident light and transmits the incident light through different paths, and a condenser lens that focuses the incident light toward the thin film layer or the camera unit. And a combination of these various mirrors, lenses, and optical components are well known to those skilled in the art, and thus detailed descriptions thereof will be omitted.
  • the camera unit 150 is reflected by the thin film layer 11 or the base layer 10 and is incident on the optical system 140 side to irradiate the light L through the optical system 140, such as the intensity of the light.
  • the information is imaged.
  • a charge coupled device (CCD) camera having a number of flowers suitable for a region to be measured is used.
  • an area in which a predetermined area of the thin film layer 11 can be captured by a single trigger signal is used.
  • Camera is used.
  • thickness information in a certain area can be simultaneously obtained and shown in a three-dimensional graph, and as shown in FIG. 7, surface shape information in that area can also be obtained.
  • the relative difference between the thickness of the thin film layer 11 is defined herein as the surface shape. .
  • FIG. 3 is a view schematically illustrating a thickness measuring method according to an embodiment of the present invention
  • FIG. 4 is a view schematically showing a reflection path of light incident on a thin film layer
  • FIG. 5 is an embodiment of the present invention.
  • FIG. 6 is a diagram schematically illustrating a method of reflectance distribution modeling according to the present invention
  • FIG. 6 is a diagram illustrating a comparison of a measurement reflection distribution curve, an integral reflection distribution curve, and a reflection distribution curve by a conventional modeling method.
  • the thickness measuring method of the present embodiment includes a modeling step S110, an obtaining step S120, a comparing step S130, and a determining step S140.
  • the modeling step (S110) a plurality of sample thin film layers having different thicknesses are assumed, and an integral reflection distribution curve 20 corresponding to each sample thin film layer is prepared using the reflectance distribution curve modeling method of the present invention.
  • the sample thin film layer is not an actual thin film layer but an imaginary thin film layer having different thicknesses for performing modeling using an equation.
  • the sample thin film layer is the same material as the thin film layer 11 that will actually measure its thickness, and thus the physical properties of the thin film layer 11 to measure the thickness, for example, the reflection coefficient. (reflection coefficient), complex refractive index (complex refractive index), etc. are modeled.
  • the upper limit and the lower limit of the thickness corresponding to the integral reflectance distribution curve 20 to be modeled are determined in advance through information on the upper and lower limits of the thickness of the thin film layer 11 processed in the actual process, and the upper and lower limit thicknesses are fixed at regular intervals. After dividing, the integral reflectance distribution curve 20 is modeled for each thickness.
  • Reflectance distribution curve modeling method for preparing an integrated reflectance distribution curve 20 corresponding to each sample thin film layer, the reflection distribution curve preparing step (S111) and the input intensity setting step (S112) And an output intensity setting step S113, an integral reflection setting step S114, and an integral reflection distribution curve generation step S115.
  • a reflectance distribution curve 40 representing a reflectance distribution of the thin film layer 11 according to the change of the wavelength of light is prepared.
  • the reflectance distribution curve 40 is prepared by mathematical modeling using the following equations.
  • R p (d, ⁇ ) is the total reflection coefficient of the P wave parallel to the plane of incidence
  • r p 12 is the Fresnel reflection of the P wave at the interface between the air layer 12 and the thin film layer 11 layer
  • R p 23 is the Fresnel reflection coefficient of the P wave at the interface between the thin film layer 11 and the base layer 10
  • ⁇ is an amount of phase change generated when light L passes through the thin film layer 11.
  • R s (d, ⁇ ) is the total reflection coefficient of the S wave perpendicular to the incident plane
  • r s 12 is the Fresnel reflection of the S wave at the interface between the air layer 12 and the thin film layer 11 layer
  • r s 23 is the Fresnel reflection coefficient of the S wave at the interface between the thin film layer 11 and the base layer 10.
  • d is the thickness of the thin film layer 11
  • ⁇ 2 is the refractive angle in the thin film layer 11.
  • R1 is the reflectivity by mathematical modeling
  • I i is the intensity of incident light L
  • I r is the intensity of reflected light L.
  • the reflectivity can be obtained for the thin film layer 11 having a predetermined thickness, and the reflectance distribution as shown in FIG. Curve 40 can be generated.
  • the intensity distribution curve 30 is integrated in the predetermined wavelength band 32 and the integrated value is set as the input intensity I i .
  • an intensity distribution curve 30 representing an intensity distribution of light in a predetermined wavelength band is output as shown in FIG. 5.
  • the white light passes through the linear variable filter 120 to prepare a bandpass intensity distribution curve 30.
  • an intensity distribution curve 30 of light band-passed around 600 nm is illustrated as an example.
  • the intensity distribution curve 30 for the specific wavelength 31 is provided, the intensity distribution curve 30 is integrated in the wavelength band 32 to set the input intensity I i of the specific wavelength 31.
  • the composite intensity distribution curve 50 combining the reflection distribution curve 40 and the intensity distribution curve 30 for a specific wavelength is generated.
  • the composite intensity distribution curve 50 is for a particular wavelength, and FIG. 5 shows a composite intensity distribution curve 50 for 600 nm as an example.
  • the composite intensity distribution curve 50 for the specific wavelength 31 is provided, the composite intensity distribution curve 50 is integrated in the wavelength band 32 to set the output intensity I r of the specific wavelength.
  • the value obtained by dividing the output intensity I r of the specific wavelength by the input intensity I i of the specific wavelength is set to the integral reflectivity R2 of the thin film layer for the specific wavelength.
  • an integral reflection diagram (R2, 21) of the thin film layer with respect to a specific wavelength of 600 nm is shown on the graph.
  • R2 is the integral reflectance by mathematical modeling
  • ⁇ * is the specific wavelength
  • I i is the input intensity
  • I r is the output intensity
  • I 0 is the maximum value of the intensity at the particular wavelength
  • I 0 ⁇ F ⁇ * is the intensity distribution curve of a specific wavelength
  • R1 is the reflectance distribution curve.
  • the input intensity setting step (S112), the output intensity setting step (S113) and the integral reflectance setting step (S114) are repeated while changing the specific wavelength 31, and the wavelength is changed.
  • the integrated reflectance distribution curve 20 as shown in FIG. 5 can be generated. have.
  • the integrated reflection distribution curves 20 for the different thicknesses may be prepared by performing the above-described steps while varying the thickness. In this way, if the integral reflection distribution curves 20 for various thicknesses are provided, the modeling step S110 is completed.
  • the measurement reflectivity distribution curve 60 of the thin film layer 11 according to the change of the wavelength of the light L by irradiating the white light toward the thin film layer 11 side.
  • the first intensity setting step (S121), the second intensity setting step (S122), the measurement reflectance setting step (S123), and the measurement reflection distribution curve generation step (S124) are obtained. Include.
  • the white light bandpass (bandpass) to have an intensity distribution in a predetermined wavelength band 32 around a specific wavelength 31, and then the base layer (not a thin film layer laminated on the upper surface ( 10) Irradiate the band pass light (L) to the side. Thereafter, the intensity distribution curve of the light reflected by the base layer 10 is integrated in the wavelength band 32 to set it as the first intensity.
  • the white light is bandpassed to have intensity distribution in a predetermined wavelength band 32 around a specific wavelength 31, and then the light bandpassed to the thin film layer 11.
  • Examine (L) Thereafter, the intensity distribution curve of the light reflected by the thin film layer 11 and the base layer 10 is integrated in the wavelength band 32 to set it as the second intensity.
  • a value obtained by dividing the second intensity by the first intensity is set as the measurement reflectance of the thin film layer for a specific wavelength. That is, the ratio of the strength of the thin film layer 11 to the strength of the base layer 10 on which the thin film layers are not laminated is determined as the measurement reflectance of the thin film layer.
  • the measurement reflectance distribution curve generation step (S124), the first intensity setting step (S121), the second intensity setting step (S122), and the measurement reflectance setting step (S123) are repeated while changing the specific wavelength 31, and thus, A measurement reflectance distribution curve 60 representing the distribution of the measurement reflectance according to the change is generated.
  • the measurement reflectance distribution curve 60 as shown in FIG. 3 may be generated.
  • the comparison step (S130) a substantial match between the plurality of integrated reflectance distribution curves 20 and the measured reflectance distribution curves 60 prepared by mathematical modeling are compared.
  • the error function using the least square method is obtained to determine the integral reflection distribution curve 20 and the measurement reflection distribution curve 60 having the minimum error as "substantial agreement". Since it is well known, more detailed description is omitted.
  • the integral reflection distribution curve 20 is selected to substantially match the measurement reflection distribution curve 60, and the thickness corresponding to the integration reflection distribution curve 20 is finally determined as the thickness of the thin film layer 11.
  • FIG. 6 is a diagram comparing the measured reflectivity distribution curve 60, the integrated reflectance distribution curve 20 by the modeling method of the present invention, and the reflectivity distribution curve 1 by the conventional modeling method. It can be seen that the measured reflectance distribution curve 60 measured by 100) is much better matched to the integrated reflectance distribution curve 20 by the modeling method of the present invention than the reflectivity distribution curve 1 by the conventional modeling method. .
  • the reflectivity distribution curve modeling method and the thickness measurement method of the present invention configured as described above are reflected by the thin film layer using a method of integrating within the wavelength band in the light that is bandpassed and entered into a predetermined wavelength band.
  • the effect of mathematically modeling the reflectance distribution curve substantially close to the reflectance distribution curve obtained by actual measurement can be obtained.
  • the thickness measuring reflector of the present invention configured as described above has a specific wavelength to be measured without noise such as light having an unwanted ambient wavelength by bandpassing light by disposing a linear variable filter between the light source and the optical system. By passing only light having a central wavelength band, an effect of measuring the thickness of the thin film layer more precisely can be obtained.
  • the thickness measuring reflectometer of the present invention can simultaneously obtain not only the thickness of the thin film layer but also the surface shape, which means the relative thickness difference of the thin film layer, the effect of calculating and visualizing comprehensive information on the thin film layer can be obtained.
  • the thickness measurement method using the same, and the thickness measurement reflectometer in the case of light that is bandpassed and incident in a predetermined wavelength band, the light is reflected by the thin film layer by using an integrated method in the wavelength band.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

Le procédé de modélisation de courbe de distribution de réflectance de cette invention est destiné à modéliser une distribution de la réflectance d'une couche de film mince conformément à un changement de la longueur d'onde de lumière par rapport à la couche de film mince ayant une épaisseur uniforme. Ce procédé comprend : une étape de préparation de courbe de distribution de la réflectance au cours de laquelle la courbe est préparée pour représenter une distribution de la réflectance de la couche de film mince en fonction d'une variation de la longueur d'onde de la lumière; une étape de définition de l'intensité d'entrée au cours de laquelle une courbe de distribution de l'intensité est préparée pour représenter l'intensité de lumière d'une certaine bande de longueur d'onde proche d'une longueur d'onde spécifique qui laisse passer la lumière blanche, et la courbe de distribution de l'intensité est alors intégrée dans la bande de longueur d'onde pour être définie comme intensité d'entrée de la longueur d'onde spécifique; une étape de définition de l'intensité de sortie au cours de laquelle une courbe de distribution d'intensité combinée des courbes de distribution de réflectance et d'intensité est intégrée dans la bande de longueur d'onde pour définir une intensité de sortie de la longueur d'onde spécifique; une étape de définition de la réflectance intégrée au cours de laquelle une valeur obtenue par division de l'intensité de sortie de la longueur d'onde spécifique par l'intensité d'entrée de la longueur d'onde spécifique est définie comme réflectance d'intégration de la couche de film mince pour la longueur d'onde spécifique; et une étape de génération de courbe de distribution de réflectance d'intégration au cours de laquelle une courbe de distribution de réflectance d'intégration, destinée à refléter la distribution de réflectance d'intégration en fonction d'une variation de longueur d'onde, est générée par répétition de l'étape de définition d'intensité d'entrée, de l'étape de définition d'intensité de sortie et de l'étape de définition de réflectance d'intégration, tout en faisant varier la longueur d'onde spécifique.
PCT/KR2010/001131 2009-03-23 2010-02-26 Procédé de modélisation de la courbe de distribution de réflectance, système de mesure d'épaisseur et réflectomètre de mesure d'épaisseur utilisant ce système WO2010110535A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012501920A JP5424143B2 (ja) 2009-03-23 2010-02-26 反射度分布曲線のモデリング方法及びこれを利用した厚さ測定方法、ならびに厚さ測定反射計
CN201080013587XA CN102362146B (zh) 2009-03-23 2010-02-26 反射度分布曲线的建模方法及应用该方法的厚度检测方法以及厚度检测反射仪

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0024362 2009-03-23
KR1020090024362A KR101107507B1 (ko) 2009-03-23 2009-03-23 반사도분포곡선의 모델링방법 및 이를 이용하는 두께 측정방법, 두께 측정 반사계

Publications (2)

Publication Number Publication Date
WO2010110535A2 true WO2010110535A2 (fr) 2010-09-30
WO2010110535A3 WO2010110535A3 (fr) 2010-12-09

Family

ID=42781626

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/001131 WO2010110535A2 (fr) 2009-03-23 2010-02-26 Procédé de modélisation de la courbe de distribution de réflectance, système de mesure d'épaisseur et réflectomètre de mesure d'épaisseur utilisant ce système

Country Status (5)

Country Link
JP (1) JP5424143B2 (fr)
KR (1) KR101107507B1 (fr)
CN (1) CN102362146B (fr)
TW (1) TWI428557B (fr)
WO (1) WO2010110535A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110763657A (zh) * 2019-11-20 2020-02-07 江苏赛诺格兰医疗科技有限公司 用于反射材料反射率测试系统的光电数字转换系统

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101537854B1 (ko) * 2013-09-23 2015-07-21 에스엔유 프리시젼 주식회사 두께 측정 장치 및 이를 이용한 두께 측정 방법
CN104111235B (zh) * 2014-07-11 2016-10-05 北京大学 一种测量二维薄膜材料复折射率谱的方法
KR101650319B1 (ko) * 2015-03-06 2016-08-24 에스엔유 프리시젼 주식회사 컬러 카메라를 이용한 두께 측정방법 및 두께 측정장치
JP6568041B2 (ja) * 2016-10-25 2019-08-28 株式会社ブルービジョン 光源装置及び撮像システム
JP6550101B2 (ja) * 2017-07-13 2019-07-24 Ｊｆｅテクノリサーチ株式会社 膜厚測定方法及び膜厚測定装置
KR102210348B1 (ko) 2019-07-25 2021-02-01 (주)지엘테크 초점위치와 광축의 조정이 가능한 반사계
US11624607B2 (en) 2020-01-06 2023-04-11 Tokyo Electron Limited Hardware improvements and methods for the analysis of a spinning reflective substrates
DE112021007576T5 (de) * 2021-04-23 2024-02-22 Yamaha Hatsudoki Kabushiki Kaisha Messvorrichtung und Platineninspektionsvorrichtung
US11738363B2 (en) 2021-06-07 2023-08-29 Tokyo Electron Limited Bath systems and methods thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001153620A (ja) * 1999-11-29 2001-06-08 Dainippon Screen Mfg Co Ltd 膜厚測定装置および膜厚測定方法
KR100490325B1 (ko) * 2001-09-21 2005-05-17 케이맥(주) 2차원형 검출기를 이용한 박막 특성 측정 장치 및 그 측정 방법
KR100624542B1 (ko) * 2004-03-04 2006-09-19 다이니폰 스크린 세이조우 가부시키가이샤 막 두께 측정 방법 및 장치

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3657345B2 (ja) * 1996-04-25 2005-06-08 オリンパス株式会社 膜厚検査装置
JP3932836B2 (ja) * 2001-07-27 2007-06-20 株式会社日立製作所 薄膜の膜厚計測方法及びその装置並びにそれを用いたデバイスの製造方法
US7286242B2 (en) * 2001-09-21 2007-10-23 Kmac Apparatus for measuring characteristics of thin film by means of two-dimensional detector and method of measuring the same
JP2003168666A (ja) * 2001-12-03 2003-06-13 Nikon Corp 膜層状態測定方法、膜層状態測定装置、研磨装置及び半導体デバイスの製造方法
JP2007212477A (ja) * 2007-05-01 2007-08-23 Toshiba Corp 成膜量測定方法及び成膜量測定装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001153620A (ja) * 1999-11-29 2001-06-08 Dainippon Screen Mfg Co Ltd 膜厚測定装置および膜厚測定方法
KR100490325B1 (ko) * 2001-09-21 2005-05-17 케이맥(주) 2차원형 검출기를 이용한 박막 특성 측정 장치 및 그 측정 방법
KR100624542B1 (ko) * 2004-03-04 2006-09-19 다이니폰 스크린 세이조우 가부시키가이샤 막 두께 측정 방법 및 장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110763657A (zh) * 2019-11-20 2020-02-07 江苏赛诺格兰医疗科技有限公司 用于反射材料反射率测试系统的光电数字转换系统

Also Published As

Publication number Publication date
KR20100105976A (ko) 2010-10-01
TWI428557B (zh) 2014-03-01
KR101107507B1 (ko) 2012-01-31
JP2012521560A (ja) 2012-09-13
CN102362146A (zh) 2012-02-22
CN102362146B (zh) 2013-10-16
WO2010110535A3 (fr) 2010-12-09
TW201035518A (en) 2010-10-01
JP5424143B2 (ja) 2014-02-26

Similar Documents

Publication Publication Date Title
WO2010110535A2 (fr) Procédé de modélisation de la courbe de distribution de réflectance, système de mesure d'épaisseur et réflectomètre de mesure d'épaisseur utilisant ce système
US7092105B2 (en) Method and apparatus for measuring the three-dimensional surface shape of an object using color informations of light reflected by the object
US20070165210A1 (en) High-density channels detecting device
JP6984963B2 (ja) 測定システムおよび方法
CN107683400A (zh) 用于测量在半导体晶片上的高度的方法及设备
KR100624256B1 (ko) 투명한 튜브의 외경과 내경을 측정하기 위한 장치 및 방법
TW202007932A (zh) 一種感測裝置及感測方法
JP2008286584A (ja) 光学特性測定装置およびフォーカス調整方法
TWI756306B (zh) 光學特性測定裝置及光學特性測定方法
TW202043758A (zh) 拓樸半導體裝置晶圓之製造中量測錯位的方法
CN113375583A (zh) 光路系统、单目三维图像采集系统及三维应变检测系统
US20230058064A1 (en) Film thickness measuring device and film thickness measuring method
CN206627438U (zh) 一种新型透过率测量仪
CN110779874B (zh) 一种光学参数与形貌同时测量的装置
TWI598565B (zh) 測量薄膜厚度的方法
JP3595117B2 (ja) アレイ素子検査方法およびアレイ素子検査装置
CN103453845B (zh) 一种散射计量的装置和测量方法
KR20190027045A (ko) 층간 절연체로 투명 pid를 갖는 다층레이어 패널의 표면검사장치
CN108759691A (zh) 工作效果好的基于双光路红外反射法的涂层测厚仪的测厚方法
RU69634U1 (ru) Прибор для обнаружения и классификации дефектов оптических объектов (варианты)
Ohno et al. One-shot color mapping of a ray direction field for obtaining three-dimensional profiles integrating deep neural networks
KR102091623B1 (ko) 광파이버를 이용한 3차원 형상 측정 장치
JP2004117236A (ja) 光学特性測定装置
JP7440860B2 (ja) 水晶体の透過スペクトル推定システム及び水晶体の透過スペクトル推定方法
WO2023143242A1 (fr) Module de détection d'empreintes digitales, et appareil et procédé de détection d'empreintes digitales de corps vivant

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201080013587.X

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10756290

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 2012501920

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10756290

Country of ref document: EP

Kind code of ref document: A2