WO2010104238A1 - 고압 처리기를 이용한 기판처리장치 및 고압 처리기의 가스 재활용방법 - Google Patents

고압 처리기를 이용한 기판처리장치 및 고압 처리기의 가스 재활용방법 Download PDF

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Publication number
WO2010104238A1
WO2010104238A1 PCT/KR2009/002527 KR2009002527W WO2010104238A1 WO 2010104238 A1 WO2010104238 A1 WO 2010104238A1 KR 2009002527 W KR2009002527 W KR 2009002527W WO 2010104238 A1 WO2010104238 A1 WO 2010104238A1
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WO
WIPO (PCT)
Prior art keywords
carbon dioxide
pressure
processor
additive
high pressure
Prior art date
Application number
PCT/KR2009/002527
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English (en)
French (fr)
Korean (ko)
Inventor
한갑수
Original Assignee
주식회사 에이앤디코퍼레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 주식회사 에이앤디코퍼레이션 filed Critical 주식회사 에이앤디코퍼레이션
Priority to JP2011553926A priority Critical patent/JP5318975B2/ja
Publication of WO2010104238A1 publication Critical patent/WO2010104238A1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like

Definitions

  • the present invention relates to a substrate processing apparatus using a high pressure processor and a gas recycling method of the high pressure processor, and in particular, a high pressure processor capable of reducing energy consumption and reducing footprint in a process for reusing carbon dioxide used for cleaning or drying.
  • the present invention relates to a substrate recycling apparatus and a gas recycling method of a high pressure processor.
  • a cleaning process for removing foreign substances of organic or inorganic materials present on the semiconductor substrate is required.
  • wet cleaning has many aspects such as high aspect ratio, wetting in the microstructure by the cleaning liquid, watermark formation, and increasing the purification cost to increase the purity of the cleaning liquid. I have a problem.
  • dry cleaning is being developed by plasma, gas phase or supercritical dry cleaning technology.
  • dry cleaning process by plasma is not easy to remove contaminants as well as concern that the substrate may be damaged by oxygen plasma. There was a problem that a process is required.
  • FIG. 1 is a block diagram of a conventional substrate processing apparatus described in Korean Patent No. 0753493.
  • a conventional substrate treating apparatus includes a high pressure processor 60, a gaseous carbon dioxide supply source 20 and a liquid carbon dioxide supply source 21 connected to the high pressure processor 60, and a high pressure pump for delivering carbon dioxide at a high pressure. 24, a cleaning additive source 25 for supplying the cleaning additive, a rinse additive source 26 for supplying the rinse additive, and a supply pipe L2, L3, L4 for heating carbon dioxide and the additive.
  • a homogeneous transparent phase mixer 70 for supplying a predetermined amount of the cleaning additive while forming a homogeneous transparent phase mixture in a supercritical state.
  • a separator 61 connected to the high pressure processor 60 to separate the mixture discharged from the high pressure processor 60 into gaseous carbon dioxide and a liquid additive, and a separated gas.
  • a off automatic valve (1 to 12) and the gas washing column 63 and the absorption column 64 and a carbon dioxide condensation tank 23 to condense and re-purified gas for purifying carbon dioxide, on.
  • the invention described in Korean Patent No. 0753493 uses a high-pressure processor 60 to clean a semiconductor substrate to be cleaned with carbon dioxide and an additive in a supercritical state, and then is used by using an on-off automatic valve 11.
  • the carbon dioxide and the additives are discharged to the outside, or the separator 61, the gas washing column 63, the adsorption column 64 and the condensation vessel 23 are treated to reuse the used carbon dioxide in the washing process.
  • the separator 61, the gas cleaning column 63, the adsorption column 64, and the condensation container 23, which are provided independently of each other, are bulky, cause an increase in footprint, and an increase in items to be inspected. A problem occurred.
  • the carbon dioxide is discharged and then, it takes a long time to increase the pressure of the high pressure processor 60, thus delaying the process time and thus reducing the productivity.
  • the problem to be solved by the present invention in view of the above problems is to provide a substrate processing apparatus and a gas recycling method of a high pressure processor using a high pressure processor capable of integrating devices for the reuse of carbon dioxide.
  • another object of the present invention is to provide a substrate processing apparatus and a gas recycling method of a high pressure processor using a high pressure processor that can reduce the amount of energy required to recycle carbon dioxide.
  • Another problem to be solved by the present invention is to dualize the heating unit for heating the carbon dioxide, by using each heating unit as a supply buffer of carbon dioxide, to shorten the time required to increase the pressure of the high-pressure processor to the process pressure to improve productivity
  • the present invention provides a substrate treatment apparatus using a high pressure processor and a gas recycling method of the high pressure processor.
  • Substrate processing apparatus using a high pressure processor of the present invention for solving the above problems, the high pressure processor for processing a substrate using a high pressure carbon dioxide, and each branching carbon dioxide from the discharge pipe for discharging the carbon dioxide used in the high pressure processor
  • the additives are separated from the first and second branch lines and carbon dioxide supplied through the first branch line, and the carbon dioxide is condensed, and the second branch line is connected with the refrigerant circulation pipe through which the refrigerant passes through the condensation.
  • Recycling unit to be involved in the temperature drop by adiabatic expansion of the carbon dioxide supplied through, High pressure pump for pumping the liquid carbon dioxide of the recycle unit or carbon dioxide supply unit at a high pressure, and heating the carbon dioxide boosted through the high pressure pump step by step and Serves as a buffer for supplying the high pressure processor It includes a first and second heating buffer portion.
  • the gas recycling method of the high-pressure processor of the present invention for solving the above problems, by branching the gas to be recycled in the high-pressure processor to adiabatic expansion of a portion of the branched gas, the other part of the gas is adiabatic expansion
  • the recycling efficiency can be improved.
  • the substrate treating apparatus and the gas recycling method using the high pressure processor comprise an integrated single-cycle recycling unit to separate additives from carbon dioxide used for cleaning or drying, and to process the condensation process, thereby reducing the volume of equipment. It has the effect of reducing the footprint, reducing the footprint, and reducing the number of checks.
  • the gas recycling method of the substrate processing apparatus and the high pressure processor using the high pressure processor of the present invention is used for the purpose of recycling the carbon dioxide by using it for condensation of the recycled carbon dioxide without directly discharging a part of the used carbon dioxide to the outside. Reducing the amount of refrigerant used has the effect of reducing the cost.
  • the gas treatment method of the substrate processing apparatus and the high pressure processor using the high pressure processor of the present invention dual heating unit for heating the liquid carbon dioxide in a supercritical state to enable a stepwise increase in temperature, each heating unit as a supply buffer of carbon dioxide It is effective to prevent the pressure drop in the high pressure processor and to shorten the process time.
  • FIG. 1 is a block diagram of a conventional substrate processing apparatus.
  • FIG. 2 is a block diagram of a substrate processing apparatus using the high pressure processor of the present invention.
  • FIG. 3 is a cross-sectional configuration diagram of a recycling unit used in the high pressure processor of the present invention.
  • bundle tube portion 220 refrigerant circulation tube
  • partition 240 outer wall
  • gas-liquid separator 260 adsorption plate
  • first heating buffer unit 620 second heating buffer unit
  • FIG. 2 is a block diagram of a substrate processing apparatus using the high pressure processor of the present invention.
  • the substrate treating apparatus using the high pressure processor of the present invention includes a high pressure processor 100 for cleaning, rinsing or drying a substrate with supplied supercritical carbon dioxide and additives, and a carbon dioxide supply unit 400 for supplying liquid carbon dioxide.
  • the discharge line (L1) for discharging the carbon dioxide and additives used for cleaning in the high-pressure processor (100), and the first and second branch line for branching the carbon dioxide and additives discharged through the discharge line (L1) L2 and L3 and the carbon dioxide and the additive supplied through the first branch line L2 are separated from each other, the separated carbon dioxide is purified, and the refrigerant of the cooling unit 300 and the second branch line ( Lisa condensing the purified carbon dioxide using carbon dioxide supplied through L3) and condensing the carbon dioxide supplied from the carbon dioxide supply unit 400 so as not to vaporize.
  • High pressure pump 500 for supplying the clock portion 200, the carbon dioxide or the recycled carbon dioxide of the recycle unit 200 at a high pressure
  • the first heating buffer unit for storing and heating the carbon dioxide supplied from the high pressure pump 500 610 and a second heating buffer 620 which receives and stores the carbon dioxide heated in the first heating buffer 610 and reheats it to a process temperature to supply the high pressure processor 100, and the carbon dioxide to be supplied.
  • the cleaning additive supply unit 700 and the rinse additive supply unit 800 for selectively supplying the cleaning additive and the rinse additive, respectively.
  • the carbon dioxide of the carbon dioxide supply unit 400 is supplied through the valve V4 and the high pressure pump 500 through the recycle unit 200 does not vaporize the liquid carbon dioxide.
  • the high pressure is supplied to the first heating buffer unit 610.
  • the liquid carbon dioxide of the carbon dioxide supply unit 400 may be vaporized even while moving through the line, and when the vaporized carbon dioxide is directly pumped through the high pressure pump 500 which is a liquid pump, the high pressure pump 500 may idle. have.
  • the carbon dioxide supply unit 400 is condensed in the recycling unit 200 through a line L4 connected to the recycling unit 200 including a function of condensing the recycled carbon dioxide, and the liquid carbon dioxide is the high pressure pump. To pump carbon dioxide by 500.
  • the pressure of the carbon dioxide supplied to the first heating buffer unit 610 is about 150 to 300bar is appropriate, and the temperature is heated to 35 to 100 °C.
  • the carbon dioxide heated in the first heating buffer 610 is supplied to the second heating buffer 620 again.
  • the second heating buffer unit 620 heats the temperature of carbon dioxide to about 50 to 100 ° C. at a pressure of about 150 to 300 bar.
  • the pressure of the first heating buffer unit 610 and the second heating buffer unit 620 is higher than the pressure of 120 to 250 bar of the process pressure of the pressure processor 100, which means that the pressure is lost in the supply of carbon dioxide In addition to taking into consideration, after the cleaning is completed in the pressure processor 100, after the carbon dioxide and the additives are discharged to lower the pressure back to the process pressure to act quickly.
  • the carbon dioxide whose heating and pressure are adjusted through the second heating buffer unit 620 is supplied to the high pressure processor 100 by changing its path according to a cleaning or rinsing process.
  • the cleaning process when the cleaning process is performed, it passes through the valves V6, V8, and V10 so as to pass through the cleaning additive mixing unit 700, and in a high pressure atmosphere with the cleaning additive already introduced into the cleaning additive mixing unit 700.
  • the mixture is supplied to the autoclave 100.
  • valves V8 and V10 are closed, and the carbon dioxide passed through the rinse additive mixing unit 800 through the valves V9 and V11 passes through the rinse additive mixing unit 800. It is mixed with the rinse additive previously supplied.
  • valve V12 may be supplied through the cleaning additive mixing unit 700 during the rinsing process, and the treatment may make the atmosphere in the cleaning additive mixing unit 700 into a carbon dioxide atmosphere.
  • the supplied supercritical carbon dioxide and the cleaning additive or rinse additive added to the carbon dioxide are supplied to the pressure processor 100, and the plurality of substrates are simultaneously cleaned.
  • MEMS microelectromechanical systems
  • the carbon dioxide and the additive after the cleaning, rinsing or drying treatment are discharged through the discharge pipe L1, and the discharge pipe L1 is branched by the first branch line L2 and the second branch line L3.
  • the first branch line L2 is for recycling carbon dioxide
  • the second branch line L3 is used to condense the recycled carbon dioxide again.
  • the first branch line L2 and the second branch line L3 are connected to the recycling unit 200.
  • FIG. 3 is a cross-sectional configuration diagram of a recycling portion of a substrate processing apparatus using the high pressure processor of the present invention.
  • the recycling unit 200 includes a bundle tube unit 210 connected to the second branch line L3 at the center thereof and adiabatic expansion, and the cooling unit 300 around the bundle tube unit 210.
  • Refrigerant circulation pipe 220 through which the refrigerant flows through a partition wall 230 for separating the liquid carbon dioxide and the additive recycled spaced apart from the refrigerant circulation tube 220 by a predetermined distance, and the partition wall 230 and the outer wall 240 )
  • Is a ring-shaped gas-liquid separator 250 which is sequentially installed in the horizontal direction between the) and the gas carbon dioxide supplied through the first branch line (L2) is located downward from the upper side of the outer wall (240). It is configured to include a heater 270 to prevent the liquefaction of carbon dioxide.
  • And line (L4) is to allow the carbon dioxide to be condensed at the front end of the high-pressure pump 500 in order to prevent the vaporization of the liquid carbon dioxide supplied through the carbon dioxide supply unit 400.
  • the first branch line L1 is connected to a side surface of the outer wall 240 of the recycling unit 200, and the partition wall 230 is installed at a position spaced apart from the outer wall 240 by a predetermined distance.
  • the partition wall 230 is provided with a passage through which the upper side is spaced apart from the upper side of the outer wall 240 so that gaseous carbon dioxide can pass.
  • the carbon dioxide to be reused supplied through the first branch line L1 includes an additive of a liquid phase, which is separated by moving to a space formed by the outer wall 240 and the partition wall 230, in particular, the gas-liquid separator 250. It can be separated by to recycle high purity carbon dioxide.
  • the gas-liquid separator 250 may be a porous plate or an adsorption plate.
  • Contaminants that are removed during cleaning or rinsing with the additive are also collected and dropped into the space formed by the outer wall 240 and the partition wall 230.
  • the carbon dioxide which is maintained in the gas state, may be easily moved to the outside of the bundle tube part 210 through the upper side of the partition wall 230 and the outer wall 240.
  • the bundle 210 Since the bundle 210 has a large volume, heat exchange easily occurs, and thus, the carbon dioxide can be more effectively condensed with the smooth discharge of carbon dioxide by depressurization.
  • the additive is separated, and the purified gas carbon dioxide is condensed by the refrigerant circulation tube 220 to become liquid carbon dioxide, which is discharged to the high pressure pump 500 through the drain line thereunder.
  • the bundle pipe portion 210 passes the gas carbon dioxide supplied through the second branch line (L3).
  • the bundle tube portion 210 includes a plurality of pipes each end is connected to the second branch line (L3), the total sum of the cross-sectional area of the plurality of pipes is more than the second branch line (L3). The larger, the gas or liquid carbon dioxide is adiabatic expansion in the inside of the bundle tube portion 210 to be smoothly discharged to the gaseous carbon dioxide by heat exchange, and the temperature is lowered.
  • the bundle tube portion 210 serves to condense the gaseous carbon dioxide together with the refrigerant circulation tube 220 due to the carbon dioxide having a lower temperature.
  • Carbon dioxide passing through the bundle 210 is discharged to the outside, the condensed carbon dioxide is discharged as necessary, the high-pressure pump 500, the first heating buffer 610 and the second heating buffer 620 Through the high pressure processor 100 is supplied can be reused for cleaning.
  • the recycling unit 200 implements facilities that are conventionally separated and installed in the process chamber as a single device, but by implementing a structure capable of minimizing its volume, thereby reducing the footprint and the number of inspection items of the facility. Can be reduced.
  • the latent heat loss generated during the adiabatic expansion of the gaseous carbon dioxide discharged to the outside together with the refrigerant may contribute to condensation of the carbon dioxide to be reused, thereby reducing energy use.
  • the liquid carbon dioxide condensed in the recycling unit 200 is selectively supplied to the high pressure processor 100 and used again for cleaning.
  • the substrate treating apparatus and the gas recycling method using the high pressure processor comprise an integrated single-cycle recycling unit to separate additives from carbon dioxide used for cleaning or drying, and to process the condensation process, thereby reducing the volume of equipment. It can be used industrially because it can reduce the footprint, reduce the footprint, and reduce the number of checks.
  • the gas recycling method of the substrate processing apparatus and the high pressure processor using the high pressure processor of the present invention is used for the purpose of recycling the carbon dioxide by using it for condensation of the recycled carbon dioxide without directly discharging a part of the used carbon dioxide to the outside. It is possible to reduce the amount of refrigerant used to reduce the cost there is industrial availability.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
PCT/KR2009/002527 2009-03-13 2009-05-13 고압 처리기를 이용한 기판처리장치 및 고압 처리기의 가스 재활용방법 WO2010104238A1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011553926A JP5318975B2 (ja) 2009-03-13 2009-05-13 高圧処理器を利用した基板処理装置及び高圧処理器のガスリサイクル方法

Applications Claiming Priority (2)

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KR1020090021566A KR101047862B1 (ko) 2009-03-13 2009-03-13 고압 처리기를 이용한 기판처리장치 및 고압 처리기의 가스재활용방법
KR10-2009-0021566 2009-03-13

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WO2010104238A1 true WO2010104238A1 (ko) 2010-09-16

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102856234A (zh) * 2011-06-30 2013-01-02 细美事有限公司 处理基板的设备和方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101932035B1 (ko) 2012-02-08 2018-12-26 삼성전자주식회사 기판 처리용 유체 공급 시스템 및 방법
JP6535649B2 (ja) * 2016-12-12 2019-06-26 株式会社荏原製作所 基板処理装置、排出方法およびプログラム

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JPH11116222A (ja) * 1997-10-17 1999-04-27 Japan Organo Co Ltd 高温，高圧流体に含まれる二酸化炭素の液化分離法及び装置
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JP2002334860A (ja) * 2001-05-07 2002-11-22 Dainippon Screen Mfg Co Ltd 高圧処理装置
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102856234A (zh) * 2011-06-30 2013-01-02 细美事有限公司 处理基板的设备和方法
JP2013016798A (ja) * 2011-06-30 2013-01-24 Semes Co Ltd 基板処理装置及び基板処理方法
US9679788B2 (en) 2011-06-30 2017-06-13 Semes Co., Ltd. Apparatus and method for treating substrate

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KR101047862B1 (ko) 2011-07-08
JP5318975B2 (ja) 2013-10-16
JP2012519978A (ja) 2012-08-30
KR20100103120A (ko) 2010-09-27

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