KR101047862B1 - 고압 처리기를 이용한 기판처리장치 및 고압 처리기의 가스재활용방법 - Google Patents

고압 처리기를 이용한 기판처리장치 및 고압 처리기의 가스재활용방법 Download PDF

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Publication number
KR101047862B1
KR101047862B1 KR1020090021566A KR20090021566A KR101047862B1 KR 101047862 B1 KR101047862 B1 KR 101047862B1 KR 1020090021566 A KR1020090021566 A KR 1020090021566A KR 20090021566 A KR20090021566 A KR 20090021566A KR 101047862 B1 KR101047862 B1 KR 101047862B1
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KR
South Korea
Prior art keywords
carbon dioxide
high pressure
branch line
processor
additive
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KR1020090021566A
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English (en)
Korean (ko)
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KR20100103120A (ko
Inventor
한갑수
Original Assignee
주식회사 에이앤디코퍼레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 주식회사 에이앤디코퍼레이션 filed Critical 주식회사 에이앤디코퍼레이션
Priority to KR1020090021566A priority Critical patent/KR101047862B1/ko
Priority to JP2011553926A priority patent/JP5318975B2/ja
Priority to PCT/KR2009/002527 priority patent/WO2010104238A1/ko
Publication of KR20100103120A publication Critical patent/KR20100103120A/ko
Application granted granted Critical
Publication of KR101047862B1 publication Critical patent/KR101047862B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020090021566A 2009-03-13 2009-03-13 고압 처리기를 이용한 기판처리장치 및 고압 처리기의 가스재활용방법 KR101047862B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020090021566A KR101047862B1 (ko) 2009-03-13 2009-03-13 고압 처리기를 이용한 기판처리장치 및 고압 처리기의 가스재활용방법
JP2011553926A JP5318975B2 (ja) 2009-03-13 2009-05-13 高圧処理器を利用した基板処理装置及び高圧処理器のガスリサイクル方法
PCT/KR2009/002527 WO2010104238A1 (ko) 2009-03-13 2009-05-13 고압 처리기를 이용한 기판처리장치 및 고압 처리기의 가스 재활용방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020090021566A KR101047862B1 (ko) 2009-03-13 2009-03-13 고압 처리기를 이용한 기판처리장치 및 고압 처리기의 가스재활용방법

Publications (2)

Publication Number Publication Date
KR20100103120A KR20100103120A (ko) 2010-09-27
KR101047862B1 true KR101047862B1 (ko) 2011-07-08

Family

ID=42728508

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090021566A KR101047862B1 (ko) 2009-03-13 2009-03-13 고압 처리기를 이용한 기판처리장치 및 고압 처리기의 가스재활용방법

Country Status (3)

Country Link
JP (1) JP5318975B2 (ja)
KR (1) KR101047862B1 (ja)
WO (1) WO2010104238A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5544666B2 (ja) * 2011-06-30 2014-07-09 セメス株式会社 基板処理装置
KR101932035B1 (ko) 2012-02-08 2018-12-26 삼성전자주식회사 기판 처리용 유체 공급 시스템 및 방법
JP6535649B2 (ja) 2016-12-12 2019-06-26 株式会社荏原製作所 基板処理装置、排出方法およびプログラム

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002334860A (ja) 2001-05-07 2002-11-22 Dainippon Screen Mfg Co Ltd 高圧処理装置
KR100445951B1 (ko) 2001-04-17 2004-08-25 가부시키가이샤 고베 세이코쇼 고압 처리 장치
WO2009004439A2 (en) * 2007-06-12 2009-01-08 Hunt Robert D Ultra-low-temperature power cycle engine

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
LU86156A1 (fr) * 1985-11-12 1987-06-26 Xrg Systems Procede et dispositif pour extraire des liquides d'agregate et de melanges gaz-vapeur
JPH0189736U (ja) * 1987-12-04 1989-06-13
JP3049761B2 (ja) * 1990-11-21 2000-06-05 株式会社島津製作所 洗浄装置
AT395951B (de) * 1991-02-19 1993-04-26 Union Ind Compr Gase Gmbh Reinigung von werkstuecken mit organischen rueckstaenden
US5868862A (en) * 1996-08-01 1999-02-09 Texas Instruments Incorporated Method of removing inorganic contamination by chemical alteration and extraction in a supercritical fluid media
JP3658117B2 (ja) * 1996-12-12 2005-06-08 シャープ株式会社 超臨界流体排気方法及び超臨界流体洗浄装置
JP3778674B2 (ja) * 1997-10-17 2006-05-24 オルガノ株式会社 高温，高圧流体に含まれる二酸化炭素の液化分離法及び装置
JP4031281B2 (ja) * 2001-04-17 2008-01-09 株式会社神戸製鋼所 高圧処理装置
JP4053253B2 (ja) * 2001-05-17 2008-02-27 大日本スクリーン製造株式会社 高圧処理装置及び方法
JP2007305676A (ja) * 2006-05-09 2007-11-22 Sony Corp 基板の処理方法及び処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100445951B1 (ko) 2001-04-17 2004-08-25 가부시키가이샤 고베 세이코쇼 고압 처리 장치
JP2002334860A (ja) 2001-05-07 2002-11-22 Dainippon Screen Mfg Co Ltd 高圧処理装置
WO2009004439A2 (en) * 2007-06-12 2009-01-08 Hunt Robert D Ultra-low-temperature power cycle engine
WO2009004439A3 (en) 2007-06-12 2009-12-30 Hunt Robert D Ultra-low-temperature power cycle engine

Also Published As

Publication number Publication date
WO2010104238A1 (ko) 2010-09-16
JP5318975B2 (ja) 2013-10-16
JP2012519978A (ja) 2012-08-30
KR20100103120A (ko) 2010-09-27

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