WO2010103713A1 - Elément d'onde acoustique de surface - Google Patents

Elément d'onde acoustique de surface Download PDF

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Publication number
WO2010103713A1
WO2010103713A1 PCT/JP2010/000291 JP2010000291W WO2010103713A1 WO 2010103713 A1 WO2010103713 A1 WO 2010103713A1 JP 2010000291 W JP2010000291 W JP 2010000291W WO 2010103713 A1 WO2010103713 A1 WO 2010103713A1
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WO
WIPO (PCT)
Prior art keywords
piezoelectric substrate
acoustic wave
surface acoustic
support layer
substrate
Prior art date
Application number
PCT/JP2010/000291
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English (en)
Japanese (ja)
Inventor
大村正志
Original Assignee
株式会社 村田製作所
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Filing date
Publication date
Application filed by 株式会社 村田製作所 filed Critical 株式会社 村田製作所
Publication of WO2010103713A1 publication Critical patent/WO2010103713A1/fr

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/058—Holders; Supports for surface acoustic wave devices
    • H03H9/059—Holders; Supports for surface acoustic wave devices consisting of mounting pads or bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Definitions

  • the present invention relates to a surface acoustic wave element, and more particularly to a surface acoustic wave element in which a support layer is formed on a piezoelectric substrate.
  • the piezoelectric substrate In the surface acoustic wave element, it is necessary to make the piezoelectric substrate thin in order to obtain desired characteristics. In order to reduce the thickness of the piezoelectric substrate, for example, a manufacturing method shown in a sectional view of FIG. 10 has been proposed.
  • FIG. 10A after bonding the piezoelectric substrate 111A and the silicon support substrate 112A, as shown in FIG. 10B, a part 111C of the piezoelectric substrate 111A is cut and polished.
  • the piezoelectric substrate 111B having a desired thickness is formed by removing.
  • an element pattern 101a including an IDT electrode (IDT: interdigital transducer) 113, an electrode pad 114 and a wiring pattern is formed on the piezoelectric substrate 111B, and a bump 108 is formed on the electrode pad 114. To do.
  • IDT electrode interdigital transducer
  • a part 112C of the support substrate 112A is removed by cutting and polishing to form a support layer 112B having a desired thickness.
  • the piezoelectric substrate 111B and the support substrate 112B are cut so that the element patterns 101a are separated, and the surface acoustic wave separated into pieces as shown in FIG.
  • the element 110 that is, the surface acoustic wave element 110 in which the support layer 112 is formed on the piezoelectric substrate 111 is manufactured (for example, see Patent Document 1).
  • the element pattern 220 is formed as shown in the cross-sectional view of FIG. Due to this heat, warpage due to a difference in linear expansion coefficient between the piezoelectric substrate 210 and the support substrate 240 may occur, and accurate patterning may not be possible. In the worst case, the wafer itself is broken. Further, as shown in the sectional view of FIG. 9A, the wafer is warped as shown in the sectional view of FIG. 9B due to heat in the process of bonding the support substrate 240 to the flat piezoelectric substrate 210 as shown in the sectional view of FIG. Or cracks may occur.
  • the present invention intends to provide a surface acoustic wave element capable of preventing the occurrence of warping due to the formation of a support layer on a piezoelectric substrate.
  • the present invention provides a surface acoustic wave element configured as follows.
  • the surface acoustic wave element includes (a) a first piezoelectric substrate having a pair of main surfaces, (b) a second piezoelectric substrate having a pair of main surfaces, and (c) a pair of main surfaces, One of the main surfaces is bonded to one of the main surfaces of the first piezoelectric substrate, and the other of the main surfaces includes a support layer bonded to one of the main surfaces of the second piezoelectric substrate, An element pattern including an IDT electrode is formed on at least one of the other main surface of the first piezoelectric substrate and the other main surface of the second piezoelectric substrate.
  • the linear expansion coefficient of the support layer is smaller than the linear expansion coefficient of the first piezoelectric substrate and smaller than the linear expansion coefficient of the second piezoelectric substrate.
  • the surface acoustic wave element has a sandwich structure in which a support layer is sandwiched between first and second piezoelectric substrates, and an element pattern including an IDT electrode is formed on at least one of the piezoelectric substrates.
  • the first warp caused by the joining of the first piezoelectric substrate and the support layer if there is no second piezoelectric substrate, the first warp caused by the joining of the first piezoelectric substrate and the support layer, and if there is no first piezoelectric substrate, the second piezoelectric substrate and the support layer Since the second warp caused by the joining is opposite to each other, the first warp and the second warp cancel each other. Therefore, it is possible to prevent the occurrence of warpage due to the formation of the support layer on the piezoelectric substrate.
  • the linear expansion coefficient of the support layer is smaller than the linear expansion coefficients of the first and second piezoelectric substrates, the expansion and contraction of the piezoelectric substrate is suppressed by the support layer, and the variation in the frequency characteristics due to the temperature change becomes small. The characteristics are improved.
  • an element pattern including an IDT electrode is formed on both the other main surface of the first piezoelectric substrate and the other main surface of the second piezoelectric substrate.
  • the surface acoustic wave element is formed more than in the case where the element pattern is formed only on one side of the chip. It can be downsized.
  • the thickness of the support layer is larger than the thickness of the first piezoelectric substrate and larger than the thickness of the second piezoelectric substrate.
  • the support layer thicker than the first and second piezoelectric substrates, expansion and contraction of the piezoelectric substrate accompanying a temperature change can be sufficiently suppressed by the support layer, and the temperature characteristic improvement effect can be enhanced.
  • the surface acoustic wave device according to the present invention can prevent warpage due to the formation of the support layer on the piezoelectric substrate.
  • Example 1 It is sectional drawing of a surface acoustic wave element.
  • Example 1 It is sectional drawing which shows the manufacturing process of a surface acoustic wave element.
  • Example 1 It is sectional drawing which shows the manufacturing process of a surface acoustic wave element.
  • Example 2 It is sectional drawing which shows the mounting state of a surface acoustic wave element.
  • Example 2 It is sectional drawing which shows the mounting state of a surface acoustic wave element.
  • Example 2 It is sectional drawing which shows the manufacturing process of a surface acoustic wave element.
  • Example 2 It is sectional drawing which shows the manufacturing process of a surface acoustic wave element.
  • Example 2 It is sectional drawing which shows the manufacturing process of a surface acoustic wave element.
  • Reference example It is sectional drawing which shows the manufacturing process of a surface acoustic wave element.
  • Example 1 A surface acoustic wave element 2 of Example 1 will be described with reference to FIGS.
  • FIG. 1 is a cross-sectional view of a surface acoustic wave element 2 according to the first embodiment.
  • first and second piezoelectric substrates 12 and 16 are bonded via a support layer 14.
  • An element pattern 20 including an IDT electrode is formed on the surface 12 a of the first piezoelectric substrate 12.
  • An element pattern including an IDT electrode is not formed on the surface 16 b of the second piezoelectric substrate 16.
  • FIGS. 2 and 3 are cross-sectional views schematically showing a method for manufacturing the surface acoustic wave device 2 of the first embodiment.
  • a wafer-like first piezoelectric substrate 12 is prepared.
  • a lithium tantalate (LiTaO 3 ) substrate (LT substrate) or a lithium niobate (LiNbO 3 ) substrate (LN substrate) is prepared.
  • the support layer 14 is formed on the back surface 12b of the first piezoelectric substrate 12 by thermal spraying.
  • the linear expansion coefficient is sufficiently higher than that of the piezoelectric substrates 12 and 16 such as the LT substrate and the LN substrate, using a material such as a metal or ceramic such as Si, Al 2 O 3 , SiO 2 .
  • the support layer 14 can be easily formed, and the effect of improving the temperature characteristics by the support layer 14 can be increased. Even if the back surface 12b of the piezoelectric substrate 12 is uneven, the support layer 14 can be easily formed by thermal spraying, and the flatness of the back surface 12b of the piezoelectric substrate 12 is high as in the case of direct bonding. Manufacturing is simple because accuracy is not required.
  • a member that becomes the support layer 14 is formed in advance using a material such as Si, Al 2 O 3 , SiO 2, such as metal or ceramic, and this member is attached to the back surface 12 b of the first piezoelectric substrate 12. To join.
  • FIG. 3 (f) Pattern Formation Next, as shown in FIG. 3 (f), an element including an IDT electrode, a pad, and a wiring connecting the IDT electrode and the pad on the surface 12a of the first piezoelectric substrate 12.
  • the pattern 20 is formed using a photolithography technique or an etching technique.
  • the surface acoustic wave element 2 of Example 1 has a sandwich structure in which a support layer 14 is sandwiched between first and second piezoelectric substrates 12 and 16, and an element pattern 20 including an IDT electrode is formed on one piezoelectric substrate 12. Is formed.
  • the surface acoustic wave element 2 has a sandwich structure, and if there is no second piezoelectric substrate 16, the first warp caused by the bonding of the first piezoelectric substrate 12 and the support layer 14 and the first piezoelectric substrate 12 are absent. Since the second warp caused by the joining of the second piezoelectric substrate 16 and the support layer 14 is opposite to each other, the first warp and the second warp cancel each other. Therefore, it is possible to prevent the occurrence of warpage due to the formation of the support layer on the piezoelectric substrate.
  • the surface acoustic wave element 2 is formed so that the linear expansion coefficient of the support layer 14 is smaller than the linear expansion coefficients of the first and second piezoelectric substrates 12 and 16.
  • the expansion and contraction of the piezoelectric substrates 12 and 16 is suppressed by the support layer 14, fluctuations in the frequency characteristics accompanying temperature changes are reduced, and the temperature characteristics of the surface acoustic wave element 2 are improved.
  • the support layer 14 is formed using a material such as Si, Al 2 O 3 , or SiO 2 , the temperature characteristics are improved. .
  • the thickness of the support layer 14 is preferably larger than the thickness of the first piezoelectric substrate 12 and larger than the thickness of the second piezoelectric substrate 16. In this case, by making the support layer 14 thicker than the piezoelectric substrates 12 and 16, the expansion and contraction of the piezoelectric substrates 12 and 16 due to temperature change can be sufficiently suppressed by the support layer 14, and the effect of improving the temperature characteristics can be achieved. Can be increased.
  • Example 2 A surface acoustic wave element 2a of Example 2 will be described with reference to FIGS.
  • FIG. 4 is a cross-sectional view of the surface acoustic wave element 2a according to the second embodiment.
  • the surface acoustic wave element 2 a according to the second embodiment is similar to the first embodiment, in which the first and second piezoelectric substrates 12 and 16 are joined via the support layer 14.
  • An element pattern 20 is formed on the surface 12 a of 12.
  • the element pattern 22 including the IDT electrode is also formed on the surface 16 b of the second piezoelectric substrate 16.
  • the surface acoustic wave element 2 a is a duplexer in which a transmission resonator and a filter are formed by one element pattern 20 and a reception resonator and a filter are formed by the other element pattern 22.
  • the chip body 10 in which the support layer 14 is sandwiched between the pair of piezoelectric substrates 12 and 16, the chip body as in the first embodiment.
  • the surface acoustic wave element can be reduced in size as compared with the case where the element pattern 20 is formed only on one side of 10.
  • the surface acoustic wave element 2a can be mounted on the circuit board 30 as shown in the cross-sectional view of FIG.
  • one piezoelectric substrate 12 side is electrically connected to the circuit substrate 30 via the bonding wire 40
  • the other piezoelectric substrate 16 side is electrically connected to the circuit substrate 30 via the bump 42.
  • the surface acoustic wave element 2 a can be mounted in a standing state on the circuit board 30.
  • the electrodes formed on the piezoelectric substrates 12 and 16 are electrically connected to the circuit substrate 30 via the solder 44.
  • FIGS. 7 and 8 are cross-sectional views schematically showing manufacturing steps of the surface acoustic wave element 2a.
  • support layers 15s and 15t are formed on the back surfaces 12b and 16a of the first and second piezoelectric substrates 12 and 16 by thermal spraying, and the surfaces 15a and 15b of the support layers 15s and 15t are formed. They are joined together using an adhesive.
  • the surface acoustic wave element 2 a is formed so that the linear expansion coefficients of the support layers 14; 15 s and 15 t are smaller than the linear expansion coefficients of the first and second piezoelectric substrates 12 and 16.
  • the expansion and contraction of the piezoelectric substrates 12 and 16 is suppressed by the support layers 14; 15s and 15t, the fluctuation of the frequency characteristics accompanying the temperature change is reduced, and the temperature characteristics of the surface acoustic wave element 2 are improved.
  • a material such as Si, Al 2 O 3 , or SiO 2
  • the thickness of the support layer 14 and the total thickness of the support layers 15 s and 15 t are preferably larger than the thickness of the first piezoelectric substrate 12 and larger than the thickness of the second piezoelectric substrate 16.
  • the support layers 14; 15s, 15t thicker than the piezoelectric substrates 12, 16, the expansion and contraction of the piezoelectric substrates 12, 16 due to temperature changes can be sufficiently suppressed by the support layers 14; 15s, 15t. It is possible to increase the effect of improving the temperature characteristics.
  • the sandwich structure in which the support layer 14; 15s, 15t is sandwiched between the piezoelectric substrates 12 and 16 can cause warpage due to the formation of the support layer on the piezoelectric substrate. Can be prevented.
  • the surface acoustic wave element 2 may be manufactured by a manufacturing method different from the manufacturing method described above.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

La présente invention concerne un élément d'onde acoustique de surface, l'occurrence du gauchissement dû à la formation d'une couche de support sur un substrat piézoélectrique pouvant être évitée. L'élément d'onde acoustique de surface comprend : (a) un premier substrat piézoélectrique (12) comportant deux surfaces principales (12a, 12b) ; (b) un second substrat piézoélectrique (16) comportant deux surfaces principales (16a, 16b) ; et (c) une couche de support (14) comportant deux surfaces principales (14a, 14b) respectivement liées à une surface principale (12b, 16a) du premier et du second substrat piézoélectrique (12, 16). Au moins une surface principale (12a) parmi l'autre surface principale (12a, 16b) du premier et du second substrat piézoélectrique (12, 16) est dotée d'un motif d'élément (20) contenant une électrode IDT. Le coefficient de dilatation linéique de la couche de support (14) est inférieur à la fois au coefficient de dilatation linéique du premier substrat piézoélectrique (12) et à celui du second substrat piézoélectrique (16).
PCT/JP2010/000291 2009-03-10 2010-01-20 Elément d'onde acoustique de surface WO2010103713A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009057208 2009-03-10
JP2009-057208 2009-03-10

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WO2010103713A1 true WO2010103713A1 (fr) 2010-09-16

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013545398A (ja) * 2010-11-02 2013-12-19 レイセオン カンパニー 表面弾性波共振器の低加速度感度取付け
WO2016060072A1 (fr) * 2014-10-17 2016-04-21 株式会社村田製作所 Dispositif piézoélectrique et procédé de fabrication de dispositif piézoélectrique
JP2017220778A (ja) * 2016-06-07 2017-12-14 太陽誘電株式会社 弾性波デバイス

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1155070A (ja) * 1997-06-02 1999-02-26 Matsushita Electric Ind Co Ltd 弾性表面波素子とその製造方法
JP2000049563A (ja) * 1998-07-31 2000-02-18 Kinseki Ltd 弾性表面波装置
JP2002135076A (ja) * 2000-10-27 2002-05-10 Matsushita Electric Ind Co Ltd 弾性表面波デバイスおよびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1155070A (ja) * 1997-06-02 1999-02-26 Matsushita Electric Ind Co Ltd 弾性表面波素子とその製造方法
JP2000049563A (ja) * 1998-07-31 2000-02-18 Kinseki Ltd 弾性表面波装置
JP2002135076A (ja) * 2000-10-27 2002-05-10 Matsushita Electric Ind Co Ltd 弾性表面波デバイスおよびその製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013545398A (ja) * 2010-11-02 2013-12-19 レイセオン カンパニー 表面弾性波共振器の低加速度感度取付け
WO2016060072A1 (fr) * 2014-10-17 2016-04-21 株式会社村田製作所 Dispositif piézoélectrique et procédé de fabrication de dispositif piézoélectrique
JPWO2016060072A1 (ja) * 2014-10-17 2017-05-18 株式会社村田製作所 圧電デバイス、圧電デバイスの製造方法
US10594297B2 (en) 2014-10-17 2020-03-17 Murata Manufacturing Co., Ltd. Piezoelectric device and manufacturing method therefor
JP2017220778A (ja) * 2016-06-07 2017-12-14 太陽誘電株式会社 弾性波デバイス
US10250231B2 (en) 2016-06-07 2019-04-02 Taiyo Yuden Co., Ltd. Acoustic wave device

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