WO2010097903A1 - ガラス基板の研磨方法、パッケージの製造方法、圧電振動子、発振器、電子機器並びに電波時計 - Google Patents
ガラス基板の研磨方法、パッケージの製造方法、圧電振動子、発振器、電子機器並びに電波時計 Download PDFInfo
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- WO2010097903A1 WO2010097903A1 PCT/JP2009/053332 JP2009053332W WO2010097903A1 WO 2010097903 A1 WO2010097903 A1 WO 2010097903A1 JP 2009053332 W JP2009053332 W JP 2009053332W WO 2010097903 A1 WO2010097903 A1 WO 2010097903A1
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- WIPO (PCT)
- Prior art keywords
- polishing
- glass substrate
- surface plate
- piezoelectric vibrator
- polishing pad
- Prior art date
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
- H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Definitions
- the present invention relates to a method for polishing a glass substrate, a method for manufacturing a package, a piezoelectric vibrator, an oscillator, an electronic device, and a radio timepiece.
- a piezoelectric vibrator using a crystal or the like as a timing source such as a time source or a control signal, a reference signal source, or the like is used in a mobile phone or a portable information terminal device.
- Various piezoelectric vibrators of this type are known, and one of them is a surface mount (SMD) type piezoelectric vibrator.
- SMD surface mount
- As this type of piezoelectric vibrator for example, a base substrate and a lid substrate bonded to each other, a cavity formed between both substrates, and a piezoelectric vibrating piece (electronic) housed in a hermetically sealed state in the cavity Parts).
- This type of piezoelectric vibrator has a two-layer structure in which a base substrate and a lid substrate are directly bonded, and a piezoelectric vibrating piece is accommodated in a cavity formed between the two substrates.
- a cavity concave portion is formed on the lid substrate, and after mounting the piezoelectric vibrating piece on the base substrate, both wafers are anodic bonded via the bonding layer. To do.
- a plurality of piezoelectric vibrators (packages) in which the piezoelectric vibrating reeds are hermetically sealed in the cavities are manufactured. JP-A-5-177539
- the bonding margin (area of the bonding surface) of both the substrates and the surface of the bonding surface It is important to ensure accuracy and to join flat surfaces. Therefore, when bonding both substrates, a polishing step is performed to improve the surface accuracy by polishing the bonding surfaces of both substrates in the previous stage.
- a polishing process for example, as shown in Patent Document 1, a carrier holding a substrate is sandwiched between a pair of upper and lower surface plates provided with a polishing cloth, and the surface plate and the carrier are relatively rotated and moved.
- the polishing cloth slides mainly on the front end surface of the partition wall that surrounds the recess, so that the front end surface of the partition wall that becomes the bonding surface with the base substrate is used. It is said that the surface accuracy can be improved.
- the polishing cloth may wrap around the peripheral edge of the front end surface (joining surface) of the partition wall, and a surface sagging phenomenon may occur in the peripheral portion of the bonding surface.
- the joint surface has a curved surface shape such that the thickness of the glass substrate gradually decreases from the center to the outer peripheral side and the inner peripheral side.
- the present invention has been made in view of the above-described problems.
- the glass substrate can improve the surface accuracy of the bonding surface of the glass substrate and can ensure airtightness in the cavity by securing a bonding allowance.
- An object of the present invention is to provide a polishing method, a package manufacturing method, a piezoelectric vibrator, an oscillator, an electronic device, and a radio timepiece.
- a glass substrate polishing method is a glass substrate polishing method having a polishing step of polishing the surface of a glass substrate while supplying an abrasive, wherein the polishing step comprises: A primary polishing step for polishing the surface of the glass substrate using a first polishing pad made of a polishing cloth, and a secondary polishing step for polishing the surface of the glass substrate using a second polishing pad made of urethane foam. It is characterized by having.
- the surface of the glass substrate can be mirror-finished and the surface accuracy can be improved.
- polishing cloth may go around to the periphery of the glass substrate as described above, and the surface sagging phenomenon may occur in the peripheral portion of the surface. Therefore, in the secondary polishing step, by using a second polishing pad made of foamed urethane that is harder than the polishing cloth, while maintaining the surface accuracy of the surface of the glass substrate processed by the primary polishing, Polishing can be performed without sagging the corners. That is, the second polishing pad does not go around the edge of the corner of the glass substrate and slides only on the tip surface, so that the tip surface can be actively polished to flatten the surface sag portion.
- the surface accuracy of the surface of the glass substrate can be improved and a flat surface can be ensured to be large, so that it is possible to secure a joining allowance when joining the surfaces of the glass substrate. As a result, it is possible to reliably bond the glass substrates while ensuring airtightness.
- a concave portion is formed on the surface of the glass substrate, and in the polishing step, a tip surface of a partition wall surrounding the concave portion is polished.
- the polishing cloth wraps around the periphery of the partition wall surrounding the recess, and surface sagging occurs at the periphery of the partition wall.
- the second polishing pad made of foamed urethane which is harder than the polishing cloth, the second polishing pad does not go around the corner of the glass substrate. Since it slides only on the tip surface, it is possible to remove the surface sagging portion by actively polishing the tip surface. Therefore, the front end surface of the partition wall of the glass substrate can be flattened.
- the back surface of the glass substrate is also collectively polished. According to this configuration, in addition to the surface of the glass substrate, the surface accuracy of the back surface of the glass substrate can also be improved collectively.
- the double-side polishing apparatus includes a planetary gear mechanism including a disk-shaped carrier in which a holding hole for storing the glass substrate is formed, and is disposed above and below the carrier, and the first polishing pad or the first polishing pad A lower surface plate and an upper surface plate on which two polishing pads are mounted, and in the polishing step, the lower surface plate and the upper surface plate are placed on the surface of the glass substrate via the first polishing pad or the second polishing pad. And it presses on the back surface, revolves around the axis while rotating the carrier, and the rotation direction of the lower surface plate is set opposite to the rotation direction of the upper surface plate. According to this configuration, by rotating the surface plates in opposite directions, the resistance between the glass substrate and the polishing pad can be increased, and the polishing rate can be improved. Therefore, the work efficiency can be improved.
- the second polishing pad is used as the polishing pad of the lower surface plate, and the surface side of the glass substrate is polished by the lower surface plate, while the polishing pad of the upper surface plate is A third polishing pad made of a material softer than foamed urethane is used, and the back surface side of the glass substrate is polished by the upper surface plate.
- the polishing rate of the front surface of the glass substrate can be increased. It can be made faster than the polishing rate. That is, when the surface of the glass substrate is used as a bonding surface, only the surface that becomes the bonding surface can be actively polished to remove surface sagging.
- the package manufacturing method of the present invention is a package manufacturing method capable of enclosing an electronic component in a cavity formed between a plurality of substrates bonded to each other, and among the plurality of substrates, A recess forming step of forming the cavity recess on the surface of the first substrate, a polishing step of polishing a front end surface of the partition wall surrounding the recess using the glass substrate polishing method of the present invention, and the partition wall; And a step of anodic bonding a second substrate among the plurality of substrates.
- the second polishing pad does not wrap around the periphery of the joint surface, but slides only on the tip surface.
- the surface sag portion can be flattened by actively polishing. Thereby, the bonding surface of the first substrate can be planarized. Therefore, it is possible to improve the surface accuracy of the bonding surface of the first substrate and secure a large flat surface. Therefore, it is possible to ensure a bonding margin when bonding the bonding surface of the first substrate. As a result, the first substrate and the second substrate can be reliably anodically bonded to ensure airtightness in the cavity.
- the piezoelectric vibrator according to the present invention is manufactured by the package manufacturing method of the present invention. According to this configuration, since the piezoelectric vibrator is manufactured by the package manufacturing method of the present invention, a highly reliable piezoelectric vibrator having excellent vibration characteristics can be provided.
- the oscillator according to the present invention is characterized in that the piezoelectric vibrator of the present invention is electrically connected to an integrated circuit as an oscillator.
- the electronic device is characterized in that the piezoelectric vibrator of the present invention is electrically connected to a time measuring unit.
- the radio timepiece according to the present invention is characterized in that the piezoelectric vibrator of the present invention is electrically connected to a filter portion.
- the oscillator, electronic device, and radio timepiece according to the present invention include the above-described piezoelectric vibrator, a highly reliable product having excellent vibration characteristics can be provided.
- a glass substrate processed by primary polishing by using a second polishing pad made of foamed urethane that is harder than the polishing cloth in the secondary polishing step It is possible to perform polishing without sagging the corners of the surface while maintaining the surface accuracy of the surface. That is, since the second polishing pad does not go around the corner of the glass substrate but slides only on the tip surface, the flat surface can be actively polished to remove the surface sag portion. Thereby, the surface of a glass substrate can be planarized. Accordingly, the surface accuracy of the surface of the glass substrate can be improved and a flat surface can be ensured to be large, so that it is possible to secure a joining allowance when joining the surfaces of the glass substrate.
- the package manufacturing method of the present invention by performing the polishing using the glass substrate polishing method of the present invention, the surface accuracy of the bonding surface of the first substrate is improved and the flat surface is formed. Since it can ensure, the joining margin in the case of joining the joint surface of a 1st board
- substrate can be ensured largely. As a result, the first substrate and the second substrate can be reliably anodically bonded to ensure airtightness in the cavity.
- the piezoelectric vibrator according to the present invention since it is a piezoelectric vibrator manufactured by the method for manufacturing a package of the present invention, a highly reliable piezoelectric vibrator having excellent vibration characteristics can be provided. . Since the oscillator, electronic device, and radio timepiece according to the present invention include the above-described piezoelectric vibrator, a highly reliable product having excellent vibration characteristics can be provided.
- FIG. 1 is an external perspective view showing an example of a piezoelectric vibrator according to an embodiment of the present invention. It is an internal block diagram of a piezoelectric vibrator, and is a view of a piezoelectric vibrating piece viewed from above with a lid substrate removed.
- FIG. 3 is a cross-sectional view taken along line AA in FIG. 2. It is a disassembled perspective view of a piezoelectric vibrator. 2 is a flowchart showing a flow of manufacturing the piezoelectric vibrator shown in FIG. 1. It is process drawing for demonstrating a 2nd wafer preparation process, Comprising: It is a figure which shows the cross section of the wafer for lid substrates.
- SYMBOLS 1 Piezoelectric vibrator (package) 3a ... Recessed part 5 ... Piezoelectric vibration piece (electronic component) 40 ... Wafer for lid substrate (glass substrate, 1st board
- FIG. 1 is an external perspective view of the piezoelectric vibrator according to the present embodiment
- FIG. 2 is an internal configuration diagram of the piezoelectric vibrator, and is a view of the piezoelectric vibrating piece viewed from above with the lid substrate removed.
- FIG. 3 is a cross-sectional view of the piezoelectric vibrator taken along line AA shown in FIG. 2, and
- FIG. 4 is an exploded perspective view of the piezoelectric vibrator. As shown in FIGS.
- the piezoelectric vibrator 1 is formed in a box shape in which a base substrate 2 and a lid substrate 3 are laminated in two layers, and the piezoelectric vibrating reed 5 is accommodated in an internal cavity C.
- the surface mount type piezoelectric vibrator 1 is provided.
- the piezoelectric vibrating reed 5 and the external electrodes 6 and 7 installed outside the base substrate 2 are electrically connected by a pair of through electrodes 8 and 9 penetrating the base substrate 2.
- the base substrate 2 is formed in a plate shape with a transparent insulating substrate made of a glass material such as soda lime glass.
- the base substrate 2 is formed with a pair of through holes (through holes) 21 and 22 in which a pair of through electrodes 8 and 9 are formed.
- the through holes 21 and 22 have a tapered cross-sectional shape in which the diameter gradually decreases from the lower surface to the upper surface of the base substrate 2.
- the lid substrate 3 is a transparent insulating substrate made of a glass material, for example, soda-lime glass, and is formed in a plate shape that can be superimposed on the base substrate 2.
- a rectangular recess 3 a for accommodating the piezoelectric vibrating reed 5 is formed on the bonding surface side of the lid substrate 3 to which the base substrate 2 is bonded.
- the concave portion 3 a forms a cavity C that accommodates the piezoelectric vibrating piece 5 when the base substrate 2 and the lid substrate 3 are overlaid.
- the lid substrate 3 is anodically bonded to the base substrate 2 via a bonding layer 23 described later with the recess 3a facing the base substrate 2 side.
- the piezoelectric vibrating piece 5 is a tuning fork type vibrating piece formed from a piezoelectric material such as quartz, lithium tantalate, or lithium niobate, and vibrates when a predetermined voltage is applied.
- the piezoelectric vibrating reed 5 includes a pair of vibrating arm portions 24 and 25 arranged in parallel and a base portion 26 that integrally fixes the base end sides of the pair of vibrating arm portions 24 and 25 in a plan view.
- An excitation electrode comprising a pair of first excitation electrode and a second excitation electrode (not shown) that vibrates the vibration arm portions 24, 25 on the outer surface of the pair of vibration arm portions 24, 25;
- the piezoelectric vibrating reed 5 configured in this way is bump-bonded onto the lead-out electrodes 27 and 28 formed on the upper surface of the base substrate 2 using bumps B such as gold. ing. More specifically, the first excitation electrode of the piezoelectric vibrating piece 5 is bump-bonded on one lead-out electrode 27 via one mount electrode and bump B, and the second excitation electrode is connected to the other mount electrode and Bump bonding is performed on the other lead-out electrode 28 via the bump B. As a result, the piezoelectric vibrating reed 5 is supported in a state where it floats from the upper surface of the base substrate 2, and the mount electrodes and the routing electrodes 27 and 28 are electrically connected to each other.
- bumps B such as gold.
- a bonding layer 23 for anodic bonding made of a conductive material (for example, aluminum) is formed on the upper surface side of the base substrate 2 (the bonding surface side to which the lid substrate 3 is bonded).
- the bonding layer 23 is formed along the periphery of the base substrate 2 so as to surround the periphery of the recess 3 a formed in the lid substrate 3.
- the base substrate 2 and the lid substrate 3 are anodically bonded to the base substrate 2 via the bonding layer 23 with the recess 3a facing the bonding surface side of the base substrate 2.
- the external electrodes 6 and 7 are disposed at both ends of the lower surface of the base substrate 2 in the longitudinal direction, and are electrically connected to the piezoelectric vibrating reed 5 via the through electrodes 8 and 9 and the routing electrodes 27 and 28. ing. More specifically, one external electrode 6 is electrically connected to one mount electrode of the piezoelectric vibrating piece 5 through one through electrode 8 and one routing electrode 27. The other external electrode 7 is electrically connected to the other mount electrode of the piezoelectric vibrating piece 5 through the other through electrode 9 and the other lead-out electrode 28.
- the through-electrodes 8 and 9 are formed by the cylindrical body 32 and the core member 31 that are integrally fixed to the through-holes 21 and 22 by firing, and completely close the through-holes 21 and 22 to form a cavity.
- the airtightness in C is maintained, and the external electrodes 6 and 7 and the routing electrodes 27 and 28 are electrically connected.
- one through electrode 8 is positioned below the routing electrode 27 between the external electrode 6 and the base 26, and the other through electrode 9 is routed above the external electrode 7 and below the routing electrode 28. Is located.
- the cylindrical body 32 is obtained by baking paste-like glass frit.
- the cylindrical body 32 is formed in a cylindrical shape having flat ends and substantially the same thickness as the base substrate 2.
- a core member 31 is arranged at the center of the cylinder 32 so as to penetrate the center hole 32 a of the cylinder 32.
- the outer shape of the cylindrical body 32 is formed in a conical shape (tapered cross section) in accordance with the shape of the through holes 21 and 22. The cylindrical body 32 is fired in a state of being embedded in the through holes 21 and 22, and is firmly fixed to the through holes 21 and 22.
- the core material portion 31 described above is a conductive core material formed in a cylindrical shape from a metal material, and both ends are flat like the cylindrical body 32 and have the same thickness as the thickness of the base substrate 2. Is formed.
- the through electrodes 8 and 9 are ensured to have electrical conductivity through the conductive core portion 31.
- a predetermined drive voltage is applied to the external electrodes 6 and 7 formed on the base substrate 2.
- a current can be passed through each excitation electrode of the piezoelectric vibrating piece 5, and the pair of vibrating arm portions 24 and 25 can be vibrated at a predetermined frequency in a direction in which the pair of vibrating arm portions 24 and 25 approaches and separates.
- the vibration of the pair of vibrating arm portions 24 and 25 can be used as a time source, a control signal timing source, a reference signal source, or the like.
- a first wafer manufacturing process is performed in which a base substrate wafer to be the base substrate 2 later is manufactured up to a state immediately before anodic bonding (S10).
- a disk-shaped base substrate wafer is formed by removing the outermost work-affected layer by etching or the like (S11).
- a through-hole forming step is performed in which a plurality of through-holes 21 and 22 for arranging the pair of through-electrodes 8 and 9 are formed on the base substrate wafer by, for example, pressing (S12). Specifically, after forming a concave portion on the surface of the base substrate wafer by press working and polishing from the back side of the base substrate wafer, the through holes 21 and 22 can be formed by penetrating the concave portion. .
- a through electrode forming step (S13) for forming the through electrodes 8 and 9 in the through holes 21 and 22 formed in the through hole forming step (S12) is performed.
- the core portion 31 is held in a state flush with the surface of the base substrate wafer.
- the through electrodes 8 and 9 can be formed.
- a conductive material is patterned on the upper surface of the base substrate wafer to perform a bonding layer forming process for forming the bonding layer 23 (S14), and a lead electrode forming process is performed (S15).
- the first wafer manufacturing process (S10) is completed.
- FIGS. 6 to 10 are process diagrams for explaining the second wafer production process
- FIGS. 6 to 9 are cross-sectional views of the lid substrate wafer
- FIG. 10 is a plan view.
- a second wafer manufacturing process is performed in which the lid substrate wafer 40 to be the lid substrate 3 later is manufactured to a state just before anodic bonding (S20).
- a disc-shaped lid substrate wafer 40 from which soda-lime glass is polished to a predetermined thickness and cleaned, and then the outermost processed layer is removed by etching or the like is used.
- Form S21
- a recess forming step is performed for forming a plurality of recesses 3a for the cavity C in the matrix direction by etching or the like on the bonding surface 41 of the lid substrate wafer 40 (S22).
- a polishing step (S23) for polishing at least the bonding surface 41 of the lid substrate wafer 40 is performed.
- a double-sided lapping apparatus (not shown) is used to lapping (roughing) both surfaces of the lid substrate wafer 40 (the bonding surface 41 and the surface 42 opposite to the bonding surface 41 (hereinafter referred to as the back surface 42)).
- wrapping step: S24 Specifically, the lid substrate wafer 40 is sandwiched by a wrap made of cast iron or the like via a wrap agent, and the wrap and the lid substrate wafer 40 are moved relative to each other. Thereby, both surfaces 41 and 42 of the lid substrate wafer 40 can be rough-cut.
- a primary polishing process is performed to mirror-finish at least the bonding surface 41 of the lid substrate wafer 40 (S25).
- a double-side polishing apparatus 71 manufactured by S Company that polishes both surfaces 41 and 42 of the lid substrate wafer 40 at once is performed.
- FIG. 11 is a sectional view (side view) of the double-side polishing apparatus
- FIG. 12 is a plan view of the double-side polishing apparatus.
- the double-side polishing apparatus 71 is positioned at the center of the upper surface plate 72 having a circular shape in plan view, the lower surface plate 73 having the same circular shape in plan view as the upper surface plate 72, and the lower surface plate 73.
- the lid substrate wafer 40 is mounted between the sun gear 74, the internal gear 75 surrounding the outer periphery of the lower surface plate 73, and the upper surface plate 72 and the lower surface plate 73, between the sun gear 74 and the internal gear 75.
- the upper surface plate 72 and the lower surface plate 73 have a disk shape arranged on the same axis L1, and are supported so as to be rotatable around the axis L1.
- Pad holding portions 72 a and 73 a to which the polishing pad P is attached are provided on the polishing side surfaces of the surface plates 72 and 73.
- teeth 74a and 75a are vertically and annularly arranged at a constant pitch.
- the sun gear 74 and the internal gear 75 are arranged on the same axis L1 as the upper surface plate 72 and the lower surface plate 73, and rotate around the axis L1. Therefore,
- the carrier 76 has a disk shape, and a plurality of wafer holding holes 76b in which the lid substrate wafer 40 can be fitted and held are formed at equal intervals along the circumferential direction.
- the carrier 76 is formed to be thinner than the thickness of the lid substrate wafer 40, and holds the side surface of the lid substrate wafer 40 so that the lid substrate wafer 40 protrudes from above and below the carrier 76. ing.
- teeth (gear portions) 76a are arranged on the outer periphery of the carrier 76 vertically and annularly at a constant pitch.
- the carrier 76 is not fixed, and the carrier 76 rotates and revolves when the teeth 76a of the carrier 76 mesh with the rotating sun gear 74 and the teeth 74a and 75a of the internal gear 75.
- the sun gear 74 and the internal gear 75 are rotated counterclockwise (see arrows Q and R in FIG. 12) by the driving means described above. At this time, the rotational speeds of the sun gear 74 and the internal gear 75 are adjusted to rotate at different speeds. As a result, each carrier 76 revolves counterclockwise (see arrow T in FIG.
- the carrier 76, the sun gear 74, and the internal gear 75 function as a planetary gear mechanism 77 that revolves around the axis L1 while rotating the carrier 76.
- the abrasive supply means 78 includes a storage unit (not shown) having a motor for storing and stirring the abrasive W, one end connected to the storage unit via a pump, and the other supply port 79a connected to the upper surface plate 72. And a plurality of supply hoses 79. Then, the polishing agent W is sent from the housing portion into the supply hose 79 by a pump, and from the supply holes 72 b formed in the upper surface plate 72, the polishing pads P of the surface plates 72 and 73 and the lid substrate wafer 40. It is supplied between both sides 41 and 42.
- the abrasive supply means 78 includes an abrasive recovery unit (not shown) that recovers the abrasive W flowing out from the lower surface plate 73, and the recovered abrasive W can be conveyed to the supply hose 79 again. It has become.
- abrasive W cerium oxide or the like generally used for polishing a glass surface is preferably used.
- the polishing pad P is first attached to the pad holding portions 72a and 73a, and the lid substrate wafer 40 is placed in the wafer holding hole 76b. Fit.
- the polishing pad (first polishing pad) P used in the primary polishing process for example, a cerium pad that is a nonwoven fabric or a suede-like polishing cloth is preferably used.
- the abrasive supply means 78 is driven to supply the abrasive W between the polishing pad P of each of the surface plates 72 and 73 and the both surfaces 41 and 42 of the lid substrate wafer 40 from the supply port 79a. Thereafter, the upper surface plate 72, the lower surface plate 73, the sun gear 74, and the drive means for the internal gear 75 are driven, and the surface plates 72, 73 and the gears 74, 75 are rotated about the axis L1.
- FIG. 13 is a diagram showing the relationship between the rotation direction and rotation speed ratio of each of the surface plates 72 and 73 and the relative rotation ratio of the carrier 76.
- a so-called four-way method is adopted in which each of the surface plates 72 and 73 and each of the gears 74 and 75 are rotationally driven independently.
- the lower surface plate 73 and the upper surface plate 72 are rotated in opposite directions around the axis L1.
- the rotation direction of the upper surface plate 72 is clockwise (arrow N in FIG. 11) and the rotation speed ratio per predetermined time T1 is 1 (U ⁇ P1 in FIG.
- the rotation direction of the lower surface plate 73 is The counterclockwise rotation (arrow M in FIG. 12) and the rotation speed ratio are set to 3 (L ⁇ P3 in FIG. 13). That is, the lower surface plate 73 and the upper surface plate 72 are rotated in opposite directions, and the rotation speed ratio per predetermined time T1 is set to 3: 1.
- the resistance between the lid substrate wafer 40 and the polishing pad P can be increased, and the polishing rate can be improved. Therefore, the work efficiency can be improved.
- the sun gear 74 and the internal gear 75 are rotated counterclockwise (see arrows L and R in FIG. 12) as described above, and adjusted to rotate at different speeds.
- the carrier 76 revolves around the axis L1 while rotating around the axis L2.
- the revolution direction of the carrier 76 is the same direction (counterclockwise) as the rotation direction of the lower surface plate 73, and the revolution speed ratio of the carrier 76 is 1 per predetermined time T1.
- the speed ratio of the relative rotation between the lower surface plate 73 and the carrier 76 is 2 (L ⁇ P2 in FIG. 13).
- the relative rotation speed ratio between the upper surface plate 72 and the carrier 76 is also 2 (U ⁇ P2 in FIG. 13).
- polishing conditions in other primary polishing steps are, for example, as follows. ⁇ Polishing pressure: several hundred g / cm2 ⁇ Abrasive flow rate hundreds of cc / min
- both surfaces 41 and 42 of the lid substrate wafer 40 are mirror-finished as shown in FIG.
- a relatively soft polishing pad P such as the cerium pad described above. Therefore, the polishing pad P goes around to the periphery of the partition wall 43 of the recess 3 a that becomes the bonding surface 41, and forms a curved surface shape in which the thickness gradually decreases from the center to the periphery of the partition wall 43.
- the secondary polishing step (S26) is performed on the lid substrate wafer 40 that has undergone the primary polishing step (S25).
- the polishing pad P is attached to the pad holding portions 72a and 73a.
- different materials are used for the polishing pads P of the surface plates 72 and 73, respectively.
- a polishing pad (second polishing pad) P made of foamed urethane is used for the lower surface plate 73.
- the polishing pad P made of foamed urethane is formed by impregnating a foamed urethane resin into a nonwoven fabric, and is a harder polishing pad P than the cerium pad described above.
- a polishing pad for example, third polishing pad
- P for example, SUBA (registered trademark)
- SUBA registered trademark
- polishing conditions such as the rotation direction and rotation speed ratio of each of the surface plates 72 and 73 and each of the gears 74 and 75, the pressure, the flow rate of the polishing agent, etc. are the same as the polishing conditions of the primary polishing step (S25) described above. It is the same.
- the polishing pad P made of urethane foam is uniformly distributed over the entire area of the lid substrate wafer 40 while holding the abrasive W.
- tip part of the joint surface 41 is mainly grind
- the bonding allowance D3 can be formed to be about 90% to 95% as compared with the bonding allowance D1 after the lapping process.
- the second wafer creation process (S20) is completed.
- the piezoelectric vibrating reed 5 is mounted on the routing electrodes 27 and 28 of the base substrate wafer created in the first wafer creation step (S10) via bumps B such as gold, respectively (S31). Then, an overlaying step is performed in which the base substrate wafer and the lid substrate wafer 40 created in the above-described wafer creation steps are overlaid (S32). Specifically, both wafers are aligned at the correct position while using a reference mark (not shown) as an index. As a result, the mounted piezoelectric vibrating reed 5 is housed in a cavity C surrounded by the recess 3a formed in the lid substrate wafer 40 and the base substrate wafer.
- the two superposed wafers are put into an anodic bonding apparatus (not shown), and a predetermined voltage is applied in a predetermined temperature atmosphere with the outer peripheral portion of the wafer clamped by a holding mechanism (not shown) to perform anodic bonding.
- a joining step is performed (S33). Specifically, a predetermined voltage is applied between the bonding layer 23 and the lid substrate wafer 40.
- a predetermined voltage is applied between the bonding layer 23 and the lid substrate wafer 40.
- an electrochemical reaction occurs at the interface between the bonding layer 23 and the lid substrate wafer 40, and the two are firmly bonded to each other and anodic bonded.
- the piezoelectric vibrating reed 5 can be sealed in the cavity C, and a wafer bonded body in which the base substrate wafer and the lid substrate wafer 40 are bonded can be obtained.
- the wafer bonded body is cut into individual pieces, and the internal electric characteristic inspection is performed, whereby the package (piezoelectric vibrator 1) containing the piezoelectric vibrating piece 5 is formed.
- the lid substrate wafer 40 that has been mirror-polished in the primary polishing process is polished on the bonding surface 41 side using the polishing pad P made of foamed urethane in the secondary polishing process.
- the configuration according to this configuration, by using the polishing pad P made of foamed urethane that is harder than the polishing pad P made of cerium pad or the like, the surface accuracy of the bonding surface 41 processed by primary polishing is maintained. Further, the polishing can be performed without causing the peripheral portion of the joining surface 41 to be bent.
- the polishing pad P made of foamed urethane does not wrap around the periphery of the bonding surface 41 of the lid substrate wafer 40, and slides only on the tip portion of the bonding surface 41.
- the sagging part can be removed.
- the joint surface 41 can be planarized. Therefore, since both wafers can be bonded in a state where a bonding allowance (for example, bonding allowance D3) is ensured at the time of bonding of both wafers, airtightness in the cavity C can be ensured. As a result, the piezoelectric vibrator 1 having excellent vibration characteristics and high reliability can be provided.
- a bonding allowance for example, bonding allowance D3
- the oscillator 100 is configured such that the piezoelectric vibrator 1 is an oscillator electrically connected to the integrated circuit 101.
- the oscillator 100 includes a substrate 103 on which an electronic component 102 such as a capacitor is mounted. On the substrate 103, the above-described integrated circuit 101 for the oscillator is mounted, and the piezoelectric vibrator 1 is mounted in the vicinity of the integrated circuit 101.
- the electronic component 102, the integrated circuit 101, and the piezoelectric vibrator 1 are electrically connected by a wiring pattern (not shown). Each component is molded with a resin (not shown).
- the piezoelectric vibrating piece 5 in the piezoelectric vibrator 1 vibrates. This vibration is converted into an electric signal by the piezoelectric characteristics of the piezoelectric vibrating piece 5 and input to the integrated circuit 101 as an electric signal.
- the input electrical signal is subjected to various processes by the integrated circuit 101 and is output as a frequency signal.
- the piezoelectric vibrator 1 functions as an oscillator.
- an RTC real-time clock
- a function for controlling the time, providing a time, a calendar, and the like can be added.
- the quality of the oscillator 100 itself can be improved in the same manner. In addition to this, it is possible to obtain a highly accurate frequency signal that is stable over a long period of time.
- the portable information device 110 having the above-described piezoelectric vibrator 1 will be described as an example of the electronic device.
- the portable information device 110 according to the present embodiment is represented by, for example, a mobile phone, and is a development and improvement of a wrist watch in the related art. The appearance is similar to that of a wristwatch, and a liquid crystal display is arranged in a portion corresponding to a dial so that the current time and the like can be displayed on this screen.
- the portable information device 110 includes the piezoelectric vibrator 1 and a power supply unit 111 for supplying power.
- the power supply unit 111 is made of, for example, a lithium secondary battery.
- the power supply unit 111 includes a control unit 112 that performs various controls, a clock unit 113 that counts time, a communication unit 114 that communicates with the outside, a display unit 115 that displays various types of information, A voltage detection unit 116 that detects the voltage of the functional unit is connected in parallel.
- the power unit 111 supplies power to each functional unit.
- the control unit 112 controls each function unit to control operation of the entire system such as transmission and reception of voice data, measurement and display of the current time, and the like.
- the control unit 112 includes a ROM in which a program is written in advance, a CPU that reads and executes the program written in the ROM, and a RAM that is used as a work area of the CPU.
- the clock unit 113 includes an integrated circuit including an oscillation circuit, a register circuit, a counter circuit, an interface circuit, and the like, and the piezoelectric vibrator 1.
- the piezoelectric vibrator 1 When a voltage is applied to the piezoelectric vibrator 1, the piezoelectric vibrating reed 5 vibrates, and this vibration is converted into an electric signal by the piezoelectric characteristics of the crystal and is input to the oscillation circuit as an electric signal.
- the output of the oscillation circuit is binarized and counted by a register circuit and a counter circuit. Then, signals are transmitted to and received from the control unit 112 via the interface circuit, and the current time, current date, calendar information, or the like is displayed on the display unit 115.
- the communication unit 114 has functions similar to those of a conventional mobile phone, and includes a radio unit 117, a voice processing unit 118, a switching unit 119, an amplification unit 120, a voice input / output unit 121, a telephone number input unit 122, and a ring tone generation unit. 123 and a call control memory unit 124.
- the wireless unit 117 exchanges various data such as audio data with the base station via the antenna 125.
- the audio processing unit 118 encodes and decodes the audio signal input from the radio unit 117 or the amplification unit 120.
- the amplifying unit 120 amplifies the signal input from the audio processing unit 118 or the audio input / output unit 121 to a predetermined level.
- the voice input / output unit 121 includes a speaker, a microphone, and the like, and amplifies a ringtone and a received voice or collects a voice.
- the ring tone generator 123 generates a ring tone in response to a call from the base station.
- the switching unit 119 switches the amplifying unit 120 connected to the voice processing unit 118 to the ringing tone generating unit 123 only when an incoming call is received, so that the ringing tone generated in the ringing tone generating unit 123 is transmitted via the amplifying unit 120.
- the call control memory unit 124 stores a program related to incoming / outgoing call control of communication.
- the telephone number input unit 122 includes, for example, a number key from 0 to 9 and other keys. By pressing these number keys and the like, a telephone number of a call destination is input.
- the voltage detection unit 116 detects the voltage drop and notifies the control unit 112 of the voltage drop.
- the predetermined voltage value at this time is a value set in advance as a minimum voltage necessary for stably operating the communication unit 114, and is, for example, about 3V.
- the control unit 112 prohibits the operations of the radio unit 117, the voice processing unit 118, the switching unit 119, and the ring tone generation unit 123. In particular, it is essential to stop the operation of the wireless unit 117 with high power consumption. Further, the display unit 115 displays that the communication unit 114 has become unusable due to insufficient battery power.
- the operation of the communication unit 114 can be prohibited by the voltage detection unit 116 and the control unit 112, and that effect can be displayed on the display unit 115.
- This display may be a text message, but as a more intuitive display, a x (X) mark may be attached to the telephone icon displayed at the top of the display surface of the display unit 115.
- the function of the communication part 114 can be stopped more reliably by providing the power supply cutoff part 126 that can selectively cut off the power of the part related to the function of the communication part 114.
- the portable information device 110 of the present embodiment since the high-quality piezoelectric vibrator 1 is provided, the quality of the portable information device itself can be improved as well. In addition to this, it is possible to display highly accurate clock information that is stable over a long period of time.
- the radio timepiece 130 of the present embodiment includes the piezoelectric vibrator 1 electrically connected to the filter unit 131, and receives a standard radio wave including timepiece information to accurately It is a clock with a function of automatically correcting and displaying the correct time.
- a standard radio wave including timepiece information to accurately It is a clock with a function of automatically correcting and displaying the correct time.
- transmitting stations transmit standard radio waves in Fukushima Prefecture (40 kHz) and Saga Prefecture (60 kHz), each transmitting standard radio waves.
- Long waves such as 40 kHz or 60 kHz have the property of propagating the surface of the earth and the property of propagating while reflecting the ionosphere and the surface of the earth, so the propagation range is wide, and the above two transmitting stations cover all of Japan. is doing.
- the antenna 132 receives a long standard wave of 40 kHz or 60 kHz.
- the long-wave standard radio wave is obtained by subjecting time information called a time code to AM modulation on a 40 kHz or 60 kHz carrier wave.
- the received long standard wave is amplified by the amplifier 133 and filtered and tuned by the filter unit 131 having the plurality of piezoelectric vibrators 1.
- the piezoelectric vibrator 1 in this embodiment includes crystal vibrator portions 138 and 139 having resonance frequencies of 40 kHz and 60 kHz that are the same as the carrier frequency described above.
- the filtered signal having a predetermined frequency is detected and demodulated by the detection and rectification circuit 134. Subsequently, the time code is taken out via the waveform shaping circuit 135 and counted by the CPU 136.
- the CPU 136 reads information such as the current year, accumulated date, day of the week, and time. The read information is reflected in the RTC 137, and accurate time information is displayed. Since the carrier wave is 40 kHz or 60 kHz, the crystal vibrator units 138 and 139 are preferably vibrators having the tuning fork type structure described above.
- the frequency of the long standard radio wave is different overseas.
- a standard radio wave of 77.5 KHz is used. Accordingly, when the radio timepiece 130 that can be used overseas is incorporated in a portable device, the piezoelectric vibrator 1 having a frequency different from that in Japan is required.
- the radio-controlled timepiece 130 of the present embodiment since the high-quality piezoelectric vibrator 1 is provided, the quality of the radio-controlled timepiece itself can be improved in the same manner. In addition to this, it is possible to count time stably and with high accuracy over a long period of time.
- the tuning fork type piezoelectric vibrating piece 5 has been described as an example, but is not limited to the tuning fork type.
- a through-electrode may be formed by the above-described method when a thickness-shear vibration piece or an AT vibration piece is mounted in a cavity and these vibration pieces and an external electrode are electrically connected.
- the two-layer structure type in which the piezoelectric vibrating reed 5 is housed in the cavity C formed between the base substrate 2 and the lid substrate 3 has been described. It is also possible to adopt a three-layer structure type in which the piezoelectric substrate on which the resonator element 5 is formed is joined between the base substrate 2 and the lid substrate 3 so as to be sandwiched from above and below.
- the four-way method is described in which each of the surface plates 72 and 73 and each of the gears 74 and 75 are independently rotated in the polishing process.
- the present invention is not limited to this. You may employ
- FIG. In the above-described embodiment, the double-side polishing apparatus 71 made by S, in which the internal gear 75 rotates independently, is used, but the internal gear 75 does not rotate independently, and is fixed to, for example, a lower surface plate, You may use the double-side polish apparatus of a structure rotated with a lower surface plate.
- the design of the rotational speed and direction of the surface plates 72 and 73 and the gears 74 and 75 can be changed as appropriate. Further, in the above-described embodiment, the case where both surfaces 41 and 42 of the lid substrate wafer 40 are polished using the double-side polishing apparatus 71 has been described. However, it is sufficient that at least only the bonding surface 41 can be polished. That is, only the joint surface 41 may be polished using a single-side polishing apparatus.
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Abstract
Description
このような2層構造タイプの圧電振動子を製造する場合、リッド基板にキャビティ用の凹部を形成する一方、ベース基板上に圧電振動片をマウントした後、接合層を介して両ウエハを陽極接合する。これにより、キャビティ内に圧電振動片が気密封止された複数の圧電振動子(パッケージ)を製造するものである。
そこで、両基板を接合する場合には、その前段で両基板の接合面を研磨して表面精度を向上させる研磨工程を行っている。研磨工程の一例としては、例えば特許文献1に示されるように、研磨布を設けた上下一対の定盤間に、基板を保持するキャリアを挟み、定盤とキャリアとを相対的に回転、移動させて基板両面を同時に研磨する方法が開示されている。
上述した両基板のうち、特にリッド基板を研磨する際には、凹部を取り囲む隔壁の先端面上を主に研磨布が摺動することで、ベース基板との接合面となる隔壁の先端面の表面精度を向上できるとされている。
そこで、2次ポリッシュ工程において、研磨布に比べて硬質な、発砲ウレタンからなる第2研磨パッドを使用することで、1次ポリッシュで加工されたガラス基板の表面の表面精度を維持しつつ、表面の角部等を面ダレさせずに研磨を行うことができる。すなわち、第2研磨パッドは、ガラス基板の角部の周縁に回り込まず、先端面上のみを摺動するので、先端面面を積極的に研磨して面ダレ部分を平坦化することができる。
したがって、ガラス基板の表面の表面精度の向上を図るとともに、平坦面を大きく確保することができるため、ガラス基板の表面を接合する場合の接合代を確保することができる。その結果、気密性を確保した上で、ガラス基板を確実に接合することができる。
上述したように、研磨布からなる第1研磨パッドを用いて研磨を行うと、凹部を取り囲む隔壁の周縁に研磨布が回り込んで、隔壁の周縁に面ダレが発生する。
これに対して、本発明の構成によれば、研磨布に比べて硬質な、発砲ウレタンからなる第2研磨パッドを使用することで、第2研磨パッドはガラス基板の角部の周縁に回り込まず、先端面上のみを摺動するので、先端面を積極的に研磨して面ダレ部分を除去することができる。そのため、ガラス基板の隔壁の先端面を平坦化することができる。
この構成によれば、ガラス基板の表面に加えて、ガラス基板の裏面の表面精度も一括して向上させることができる。
この構成によれば、各定盤を互いに反対方向に回転させることで、ガラス基板と研磨パッドとの抵抗を増大させることができ、研磨レートを向上させることができる。そのため、作業効率の向上を図ることができる。
この構成によれば、ガラス基板の裏面と上定盤との間の抵抗に比べて、表面と下定盤との間の抵抗を増大させることができるので、ガラス基板の表面の研磨レートを裏面の研磨速度に比べて早くすることができる。すなわち、ガラス基板の表面を接合面とした場合に、接合面となる表面のみを積極的に研磨して、面ダレを除去することができる。
この構成によれば、上記本発明のガラス基板の研磨方法を用いて研磨を行うことで、第2研磨パッドは、接合面の周縁に回り込まず、先端面上のみを摺動するので、先端面を積極的に研磨して面ダレ部分を平坦化することができる。これにより、第1基板の接合面を平坦化することができる。
したがって、第1基板の接合面の表面精度の向上を図るとともに、平坦面を大きく確保することができるため、第1基板の接合面を接合する場合の接合代を確保することができる。その結果、第1基板と第2基板とを確実に陽極接合し、キャビティ内の気密を確保することができる。
この構成によれば、上記本発明のパッケージの製造方法によって製造された圧電振動子であるため、振動特性に優れた信頼性の高い圧電振動子を提供することができる。
したがって、ガラス基板の表面の表面精度の向上を図るとともに、平坦面を大きく確保することができるため、ガラス基板の表面を接合する場合の接合代を確保することができる。その結果、ガラス基板間の気密性を確保した上で、ガラス基板を確実に接合することができる。
また、本発明に係るパッケージの製造方法によれば、上記本発明のガラス基板の研磨方法を用いて研磨を行うことで、第1基板の接合面の表面精度の向上を図るとともに、平坦面を確保することができるため、第1基板の接合面を接合する場合の接合代を大きく確保することができる。その結果、第1基板と第2基板とを確実に陽極接合し、キャビティ内の気密を確保することができる。
また、本発明に係る圧電振動子によれば、上記本発明のパッケージの製造方法によって製造された圧電振動子であるので、振動特性に優れた信頼性の高い圧電振動子を提供することができる。
本発明に係る発振器、電子機器及び電波時計においては、上述した圧電振動子を備えているので、振動特性に優れた信頼性の高い製品を提供することができる。
(圧電振動子)
図1は、本実施形態における圧電振動子の外観斜視図であり、図2は圧電振動子の内部構成図であって、リッド基板を取り外した状態で圧電振動片を上方から見た図ある。また、図3は図2に示すA-A線に沿った圧電振動子の断面図であり、図4は圧電振動子の分解斜視図である。
図1~4に示すように、圧電振動子1は、ベース基板2とリッド基板3とで2層に積層された箱状に形成されており、内部のキャビティC内に圧電振動片5が収納された表面実装型の圧電振動子1である。そして、圧電振動片5とベース基板2の外側に設置された外部電極6,7とが、ベース基板2を貫通する一対の貫通電極8,9によって電気的に接続されている。
この凹部3aは、ベース基板2及びリッド基板3が重ね合わされたときに、圧電振動片5を収容するキャビティCを形成する。そして、リッド基板3は、凹部3aをベース基板2側に対向させた状態でベース基板2に対して後述する接合層23を介して陽極接合されている。
この圧電振動片5は、平行に配置された一対の振動腕部24,25と、一対の振動腕部24,25の基端側を一体的に固定する基部26とからなる平面視略コの字型で、一対の振動腕部24,25の外表面上には、振動腕部24,25を振動させる図示しない一対の第1の励振電極と第2の励振電極とからなる励振電極と、第1の励振電極及び第2の励振電極に電気的に接続された一対のマウント電極とを有している(何れも不図示)。
上述した芯材部31は、金属材料により円柱状に形成された導電性の芯材であり、筒体32と同様に両端が平坦で、且つベース基板2の厚みと略同じ厚さとなるように形成されている。
なお、貫通電極8,9は、導電性の芯材部31を通して電気導通性が確保されている。
次に、上述した圧電振動子の製造方法について、図5に示すフローチャートを参照しながら説明する。
(第1のウエハ作成工程)
まず、図5に示すように、後にベース基板2となるベース基板用ウエハを、陽極接合を行う直前の状態まで作製する第1のウエハ作製工程を行う(S10)。まず、ソーダ石灰ガラスを所定の厚さまで研磨加工して洗浄した後に、エッチング等により最表面の加工変質層を除去した円板状のベース基板用ウエハ(図7参照)を形成する(S11)。次いで、例えばプレス加工等により、ベース基板用ウエハに一対の貫通電極8,9を配置するためのスルーホール21,22を複数形成するスルーホール形成工程を行う(S12)。具体的には、プレス加工によりベース基板用ウエハの表面に凹部を形成した後、ベース基板用ウエハの裏面側から研磨することで、凹部を貫通させ、スルーホール21,22を形成することができる。
図6~10は、第2のウエハ作成工程を説明するための工程図であり、図6~9はリッド基板用ウエハの断面図、図10は平面図である。
次に、上記工程と同時或いは前後のタイミングで、後にリッド基板3となるリッド基板用ウエハ40を、陽極接合を行う直前の状態まで作製する第2のウエハ作製工程を行う(S20)。具体的には、図6に示すように、ソーダ石灰ガラスを所定の厚さまで研磨加工して洗浄した後に、エッチング等により最表面の加工変質層を除去した円板状のリッド基板用ウエハ40を形成する(S21)。次いで、図7,10に示すように、リッド基板用ウエハ40の接合面41に、エッチング等により行列方向にキャビティC用の凹部3aを複数形成する凹部形成工程を行う(S22)。
次に、リッド基板用ウエハ40の少なくとも接合面41を研磨する研磨工程(S23)を行う。研磨工程(S23)では、まず図示しない両面ラッピング装置を用い、リッド基板用ウエハ40の両面(接合面41及び接合面41と反対側の面42(以下、裏面42という))をラッピング(粗削り)する(ラッピング工程:S24)。具体的には、リッド基板用ウエハ40を鋳鉄等からなるラップによってラップ剤を介して挟持し、これらラップとリッド基板用ウエハ40とを相対移動させる。これにより、リッド基板用ウエハ40の両面41,42を粗削りすることができる。
図11は両面研磨装置の断面図(側面図)であり、図12は両面研磨装置の平面図である。
図11,12に示すように、両面研磨装置71は、平面視円形状の上定盤72と、上定盤72と同じ平面視円形状の下定盤73と、下定盤73の中央に位置するサンギヤ74と、下定盤73の外周を取り囲むインターナルギヤ75と、上定盤72と下定盤73との間で、サンギヤ74とインターナルギヤ75との間に設置され、リッド基板用ウエハ40を保持する複数のキャリア76と、ベース基板用ウエハ40の両面41,42に研磨剤Wを供給させる研磨剤供給手段78と、上定盤72、下定盤73及びサンギヤ74、インターナルギヤ75をそれぞれ独立して回転駆動させる図示しない駆動手段と、から概略構成されている。
そして、研磨剤供給手段78を駆動させ、供給口79aから各定盤72,73の研磨パッドPとリッド基板用ウエハ40の両面41,42との間に研磨剤Wを供給する。その後、上定盤72、下定盤73及びサンギヤ74、インターナルギヤ75の駆動手段を駆動させ、これら各定盤72,73及び各ギヤ74,75を軸線L1周りに回転させる。
図12,13に示すように、本実施形態のポリッシュ工程では、各定盤72,73及び各ギヤ74,75を全て独立で回転駆動させる、いわゆる4ウェイ方式を採用している。具体的には、下定盤73と上定盤72とを軸線L1回りに互いに反対方向に回転させている。この場合、上定盤72の回転方向を時計回り(図11中矢印N)とし、所定時間T1あたりの回転速度比を1とすると(図13中U・P1)、下定盤73の回転方向は半時計回り(図12中矢印M)で、かつ回転速度比が3になるように設定している(図13中L・P3)。すなわち、下定盤73と上定盤72とを互いに反対方向に回転させるとともに、所定時間T1あたりの回転速度比を3:1に設定している。
このように、各定盤72,73を互いに反対方向に回転させることで、リッド基板用ウエハ40と研磨パッドPとの抵抗を増大させることができ、研磨速度を向上させることができる。そのため、作業効率の向上を図ることができる。
・研磨圧力 数百g/cm2
・研磨剤の流量 数百cc/min
ところで、1次ポリッシュ工程(S25)では、リッド基板用ウエハ40の接合面41の表面精度を向上させるため、上述したセリウムパッド等の比較的軟らかい研磨パッドPを使用する必要がある。そのため、研磨パッドPが接合面41となる凹部3aの隔壁43の周縁まで回り込むことになり、隔壁43の中心から周縁にかけて漸次厚さが薄くなる曲面形状をなすことになる。その結果、ラッピング工程(S24)後の接合面41の平坦面の面積(接合代D1)に比べて(図7参照)、1次ポリッシング工程(S25)後の接合面の接合代D2が縮小し、後述する接合工程において、両ウエハを良好に接合することができない虞がある。
この構成によれば、セリウムパッド等からなる研磨パッドPに比べて硬質な、発砲ウレタンからなる研磨パッドPを使用することで、1次ポリッシュで加工された接合面41の表面精度を維持しつつ、接合面41の周縁部を面ダレさせずに研磨を行うことができる。すなわち、発砲ウレタンからなる研磨パッドPは、リッド基板用ウエハ40の接合面41の周縁に回り込まず、接合面41の先端部分上のみを摺動するので、先端部分を積極的に研磨して面ダレ部分を除去することができる。これにより、接合面41を平坦化することができる。したがって、両ウエハの接合時に接合代(例えば、接合代D3)を確保した状態で両ウエハを接合することができるので、キャビティC内の気密を確保することができる。その結果、振動特性に優れ信頼性の高い圧電振動子1を提供することができる。
次に、本発明に係る発振器の一実施形態について、図14を参照しながら説明する。
本実施形態の発振器100は、図14に示すように、圧電振動子1を、集積回路101に電気的に接続された発振子として構成したものである。この発振器100は、コンデンサ等の電子部品102が実装された基板103を備えている。基板103には、発振器用の上述した集積回路101が実装されており、この集積回路101の近傍に、圧電振動子1が実装されている。これら電子部品102、集積回路101及び圧電振動子1は、図示しない配線パターンによってそれぞれ電気的に接続されている。なお、各構成部品は、図示しない樹脂によりモールドされている。
また、集積回路101の構成を、例えば、RTC(リアルタイムクロック)モジュール等を要求に応じて選択的に設定することで、時計用単機能発振器等の他、当該機器や外部機器の動作日や時刻を制御したり、時刻やカレンダー等を提供したりする機能を付加することができる。
次に、本発明に係る電子機器の一実施形態について、図15を参照して説明する。なお電子機器として、上述した圧電振動子1を有する携帯情報機器110を例にして説明する。始めに本実施形態の携帯情報機器110は、例えば、携帯電話に代表されるものであり、従来技術における腕時計を発展、改良したものである。外観は腕時計に類似し、文字盤に相当する部分に液晶ディスプレイを配し、この画面上に現在の時刻等を表示させることができるものである。また、通信機として利用する場合には、手首から外し、バンドの内側部分に内蔵されたスピーカ及びマイクロフォンによって、従来技術の携帯電話と同様の通信を行うことが可能である。しかしながら、従来の携帯電話と比較して、格段に小型化及び軽量化されている。
無線部117は、音声データ等の各種データを、アンテナ125を介して基地局と送受信のやりとりを行う。音声処理部118は、無線部117又は増幅部120から入力された音声信号を符号化及び複号化する。増幅部120は、音声処理部118又は音声入出力部121から入力された信号を、所定のレベルまで増幅する。音声入出力部121は、スピーカやマイクロフォン等からなり、着信音や受話音声を拡声したり、音声を集音したりする。
なお、呼制御メモリ部124は、通信の発着呼制御に係るプログラムを格納する。また、電話番号入力部122は、例えば、0から9の番号キー及びその他のキーを備えており、これら番号キー等を押下することにより、通話先の電話番号等が入力される。
なお、通信部114の機能に係る部分の電源を、選択的に遮断することができる電源遮断部126を備えることで、通信部114の機能をより確実に停止することができる。
本実施形態の電波時計130は、図16に示すように、フィルタ部131に電気的に接続された圧電振動子1を備えたものであり、時計情報を含む標準の電波を受信して、正確な時刻に自動修正して表示する機能を備えた時計である。
日本国内には、福島県(40kHz)と佐賀県(60kHz)とに、標準の電波を送信する送信所(送信局)があり、それぞれ標準電波を送信している。40kHz若しくは60kHzのような長波は、地表を伝播する性質と、電離層と地表とを反射しながら伝播する性質とを併せもつため、伝播範囲が広く、上述した2つの送信所で日本国内を全て網羅している。
以下、電波時計130の機能的構成について詳細に説明する。
アンテナ132は、40kHz若しくは60kHzの長波の標準電波を受信する。長波の標準電波は、タイムコードと呼ばれる時刻情報を、40kHz若しくは60kHzの搬送波にAM変調をかけたものである。受信された長波の標準電波は、アンプ133によって増幅され、複数の圧電振動子1を有するフィルタ部131によって濾波、同調される。
本実施形態における圧電振動子1は、上述した搬送周波数と同一の40kHz及び60kHzの共振周波数を有する水晶振動子部138、139をそれぞれ備えている。
続いて、波形整形回路135を介してタイムコードが取り出され、CPU136でカウントされる。CPU136では、現在の年、積算日、曜日、時刻等の情報を読み取る。読み取られた情報は、RTC137に反映され、正確な時刻情報が表示される。
搬送波は、40kHz若しくは60kHzであるから、水晶振動子部138、139は、上述した音叉型の構造を持つ振動子が好適である。
例えば、上述した実施形態では、音叉型の圧電振動片5を例に挙げて説明したが、音叉型に限られるものではない。例えば、厚み滑り振動片やAT振動片をキャビティ内にマウントし、これらの振動片と外部電極とを電気的に接続する際に、上述した方法により貫通電極を形成しても構わない。
また、上述した実施形態では、ベース基板2とリッド基板3との間に形成されたキャビティC内に圧電振動片5を収納した2層構造タイプのものについて説明したが、これに限らず、圧電振動片5が形成された圧電基板をベース基板2とリッド基板3とで上下から挟み込むように接合した3層構造タイプを採用することも可能である。
また、上述した施形態では、インターナルギヤ75が独自に回転するS社製の両面研磨装置71を使用しているが、インターナルギヤ75が独自に回転せず、例えば下定盤に固定され、下定盤とともに回転する構造の両面研磨装置を使用してもよい。
さらに、各定盤72,73及び各ギヤ74,75の回転速度や回転方向は、適宜設計変更が可能である。
さらに、上述した実施形態では、両面研磨装置71を用いてリッド基板用ウエハ40の両面41,42を研磨する場合について説明したが、少なくとも接合面41のみが研磨できれば構わない。すなわち、片面研磨装置を用いて接合面41のみを研磨してもよい。
Claims (10)
- 研磨剤を供給しつつガラス基板の表面を研磨する、研磨工程を有するガラス基板の研磨方法であって、
前記研磨工程は、研磨布からなる第1研磨パッドを用いて前記ガラス基板の前記表面を研磨する1次ポリッシュ工程と、
発泡ウレタンからなる第2研磨パッドを用いて前記ガラス基板の前記表面を研磨する2次ポリッシュ工程とを有することを特徴とするガラス基板の研磨方法。 - 請求項1記載のガラス基板の研磨方法であって、
前記ガラス基板の表面には、凹部が形成され、
前記研磨工程では、前記凹部の周囲を取り囲む隔壁の先端面を研磨することを特徴とするガラス基板の研磨方法。 - 請求項1または2記載のガラス基板の研磨方法であって、
前記1次ポリッシュ工程及び前記2次ポリッシュ工程では、両面研磨装置を用い、前記ガラス基板の裏面に対しても一括して研磨を施すことを特徴とするガラス基板の研磨方法。 - 請求項3記載のガラス基板の研磨方法であって、
前記両面研磨装置は、前記ガラス基板が収納される保持孔が形成された円板状のキャリアを備える遊星歯車機構と、
前記キャリアの上下方に配置され、前記第1研磨パッドまたは前記第2研磨パッドが装着される下定盤及び上定盤とを備え、
前記研磨工程では、前記第1研磨パッドまたは前記第2研磨パッドを介して前記下定盤及び前記上定盤を前記ガラス基板の表面及び裏面に押圧し、前記キャリアを自転させながら軸線回りに公転させ、前記下定盤の回転方向を、前記上定盤の回転方向とは反対に設定することを特徴とするガラス基板の研磨方法。 - 請求項4記載のガラス基板の研磨方法であって、
前記2次ポリッシュ工程では、前記下定盤の前記研磨パッドに前記第2研磨パッドを用い、前記下定盤によって前記ガラス基板の表面側を研磨する一方、前記上定盤の前記研磨パッドに前記発砲ウレタンよりも軟質な材料からなる第3研磨パッドを用い、前記上定盤によって前記ガラス基板の裏面側を研磨することを特徴とするガラス基板の研磨方法。 - 互いに接合された複数の基板との間に形成されたキャビティ内に、電子部品を封入可能なパッケージの製造方法であって、
前記複数の基板のうち、第1基板の表面に前記キャビティ用の凹部を形成する凹部形成工程と、
請求項1ないし請求項5の何れか1項に記載のガラス基板の研磨方法を用い、前記凹部の周囲を取り囲む隔壁の先端面を研磨する研磨工程と、
前記隔壁の先端面に、前記複数の基板のうち第2基板を陽極接合する工程とを有することを特徴とするパッケージの製造方法。 - 請求項6記載のパッケージの製造方法によって製造されたことを特徴とする圧電振動子。
- 請求項7に記載の前記圧電振動子が、発振子として集積回路に電気的に接続されていることを特徴とする発振器。
- 請求項7に記載の前記圧電振動子が、計時部に電気的に接続されていることを特徴とする電子7器。
- 請求項7記載の前記圧電振動子が、フィルタ部に電気的に接続されていることを特徴とする電波時計。
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CN2009801578675A CN102333737A (zh) | 2009-02-25 | 2009-02-25 | 玻璃基板的研磨方法、封装件的制造方法、压电振动器、振荡器、电子设备以及电波钟 |
TW098145076A TW201041025A (en) | 2009-02-25 | 2009-12-25 | Glass substrate polishing method, package manufacturing method, piezoelectric oscillator, oscillator, electronic device, and radio-controlled watch |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012200851A (ja) * | 2011-03-28 | 2012-10-22 | Seiko Instruments Inc | 研磨装置、研磨方法、パッケージの製造方法、圧電振動子、発振器、電子機器及び電波時計 |
JP2013031909A (ja) * | 2011-08-03 | 2013-02-14 | Seiko Instruments Inc | ガラス基板の研磨方法、パッケージの製造方法、圧電振動子、発振器、電子機器並びに電波時計 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012169376A (ja) * | 2011-02-10 | 2012-09-06 | Seiko Instruments Inc | 陽極接合装置、パッケージ製造方法、圧電振動子、発振器、電子機器および電波時計 |
JP5597583B2 (ja) * | 2011-03-28 | 2014-10-01 | 太陽誘電株式会社 | タッチパネル装置及び電子機器 |
EP2543653B2 (fr) * | 2011-07-04 | 2023-01-11 | Comadur S.A. | Procédé de fabrication d'une céramique mate non marquante |
US9748090B2 (en) * | 2015-01-22 | 2017-08-29 | Toshiba Memory Corporation | Semiconductor manufacturing apparatus and manufacturing method of semiconductor device |
CN104858771B (zh) * | 2015-06-01 | 2017-09-29 | 东莞信柏结构陶瓷股份有限公司 | 氧化锆超薄片抛光装置以及抛光方法 |
CN105643433B (zh) * | 2016-02-15 | 2018-11-06 | 张欣 | 一种高效研磨抛光加工装置 |
JP2023517454A (ja) | 2020-06-24 | 2023-04-26 | アプライド マテリアルズ インコーポレイテッド | 圧電圧力制御によるキャリアヘッドの研磨 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05309559A (ja) * | 1992-05-12 | 1993-11-22 | Speedfam Co Ltd | 平面研磨方法及び装置 |
JP2001072433A (ja) * | 1999-09-02 | 2001-03-21 | Asahi Techno Glass Corp | 陽極接合用ガラス |
JP2002008223A (ja) * | 2000-06-21 | 2002-01-11 | Mitsui Mining & Smelting Co Ltd | 磁気記録媒体用ガラス基板の製造方法 |
JP2006157872A (ja) * | 2004-10-28 | 2006-06-15 | Seiko Instruments Inc | 圧電振動子とその製造方法、発振器、電子機器及び電波時計 |
JP2008201645A (ja) * | 2007-02-22 | 2008-09-04 | Nippon Sheet Glass Co Ltd | ガラス組成物 |
JP2008252805A (ja) * | 2007-03-30 | 2008-10-16 | Kyocera Kinseki Corp | 水晶振動子及び水晶振動子の製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05177539A (ja) | 1991-12-24 | 1993-07-20 | Sumitomo Electric Ind Ltd | 両面ポリッシュ装置によるウェハ研磨方法 |
JPH11221742A (ja) * | 1997-09-30 | 1999-08-17 | Hoya Corp | 研磨方法及び研磨装置並びに磁気記録媒体用ガラス基板及び磁気記録媒体 |
JP2002503559A (ja) * | 1998-02-19 | 2002-02-05 | ミネソタ マイニング アンド マニュファクチャリング カンパニー | ガラス研削用研磨製品および方法 |
JP2001341058A (ja) * | 2000-03-29 | 2001-12-11 | Nihon Micro Coating Co Ltd | 磁気ディスク用ガラス基板表面加工方法及び加工用砥粒懸濁液 |
US7364495B2 (en) * | 2002-03-28 | 2008-04-29 | Etsu Handotai Co., Ltd. | Wafer double-side polishing apparatus and double-side polishing method |
CN201167092Y (zh) * | 2007-12-19 | 2008-12-17 | 亿光电子工业股份有限公司 | 发光二极管的封装结构 |
-
2009
- 2009-02-25 JP JP2011501385A patent/JPWO2010097903A1/ja not_active Withdrawn
- 2009-02-25 WO PCT/JP2009/053332 patent/WO2010097903A1/ja active Application Filing
- 2009-02-25 CN CN2009801578675A patent/CN102333737A/zh active Pending
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-
2011
- 2011-06-17 US US13/163,096 patent/US8540550B2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05309559A (ja) * | 1992-05-12 | 1993-11-22 | Speedfam Co Ltd | 平面研磨方法及び装置 |
JP2001072433A (ja) * | 1999-09-02 | 2001-03-21 | Asahi Techno Glass Corp | 陽極接合用ガラス |
JP2002008223A (ja) * | 2000-06-21 | 2002-01-11 | Mitsui Mining & Smelting Co Ltd | 磁気記録媒体用ガラス基板の製造方法 |
JP2006157872A (ja) * | 2004-10-28 | 2006-06-15 | Seiko Instruments Inc | 圧電振動子とその製造方法、発振器、電子機器及び電波時計 |
JP2008201645A (ja) * | 2007-02-22 | 2008-09-04 | Nippon Sheet Glass Co Ltd | ガラス組成物 |
JP2008252805A (ja) * | 2007-03-30 | 2008-10-16 | Kyocera Kinseki Corp | 水晶振動子及び水晶振動子の製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012200851A (ja) * | 2011-03-28 | 2012-10-22 | Seiko Instruments Inc | 研磨装置、研磨方法、パッケージの製造方法、圧電振動子、発振器、電子機器及び電波時計 |
JP2013031909A (ja) * | 2011-08-03 | 2013-02-14 | Seiko Instruments Inc | ガラス基板の研磨方法、パッケージの製造方法、圧電振動子、発振器、電子機器並びに電波時計 |
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