WO2010097902A1 - ガラス基板の研磨方法、パッケージの製造方法、圧電振動子、発振器、電子機器並びに電波時計 - Google Patents
ガラス基板の研磨方法、パッケージの製造方法、圧電振動子、発振器、電子機器並びに電波時計 Download PDFInfo
- Publication number
- WO2010097902A1 WO2010097902A1 PCT/JP2009/053331 JP2009053331W WO2010097902A1 WO 2010097902 A1 WO2010097902 A1 WO 2010097902A1 JP 2009053331 W JP2009053331 W JP 2009053331W WO 2010097902 A1 WO2010097902 A1 WO 2010097902A1
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- WIPO (PCT)
- Prior art keywords
- glass substrate
- polishing
- base substrate
- plate
- piezoelectric vibrator
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
- H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
- B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
Definitions
- the present invention relates to a method for polishing a glass substrate, a method for manufacturing a package, a piezoelectric vibrator, an oscillator, an electronic device, and a radio timepiece.
- a piezoelectric vibrator using a crystal or the like as a timing source such as a time source or a control signal, a reference signal source, or the like is used in a mobile phone or a portable information terminal device.
- Various piezoelectric vibrators of this type are known, and one of them is a surface mount (SMD) type piezoelectric vibrator.
- SMD surface mount
- As this type of piezoelectric vibrator for example, a base substrate (first substrate) and a lid substrate bonded to each other, a cavity formed between the two substrates, and a hermetically sealed state in the cavity are accommodated. And a piezoelectric vibrating piece (electronic component).
- This type of piezoelectric vibrator has a two-layer structure in which a base substrate and a lid substrate are directly bonded, and a piezoelectric vibrating piece is accommodated in a cavity formed between the two substrates.
- a through hole communicating with a cavity in a base substrate made of a glass material, a through electrode disposed in the through hole, and an outer surface side of the base substrate are provided.
- Some include an external electrode electrically connected to the piezoelectric vibrating piece through the through electrode. JP 2001-105307 A
- a concave portion is formed on the surface side of the base substrate by, for example, sandblasting or press molding, and then the back surface of the base substrate is polished (single side polishing).
- a method of penetrating the recess is known.
- one-side polishing of a substrate for example, as shown in Patent Document 1, one surface of the substrate is water-adsorbed to a holding plate that holds the substrate via a suction pad, and the substrate is pressed against the polishing surface plate in this state. And a method of sticking a substrate to a holding plate using wax are common.
- the other surface of the substrate can be polished by rotationally driving the surface plate with an abrasive interposed between the surface plate and the substrate.
- the base substrate is warped by the suction force of the suction pad, and this warpage causes variations in the polishing rate in the surface direction of the base substrate.
- the substrate is attached using wax, there is a possibility that the substrate is held in a state inclined with respect to the holding plate due to uneven film thickness of the wax.
- polishing is performed in this state, only the same portion of the substrate is always in contact with the lower surface plate and polished.
- the final thickness of the finished base substrate varies, so that the parallelism of the base substrate is lowered, that is, so-called partial reduction occurs.
- a gap is formed between the joint surfaces, and as a result, airtightness in the cavity may not be ensured.
- the present invention has been made in view of the above-described problems, and is a glass substrate polishing method and a package manufacturing method capable of reducing variation in the finished thickness in the surface direction of the glass substrate and ensuring airtightness in the cavity.
- An object of the present invention is to provide a piezoelectric vibrator, an oscillator, an electronic device, and a radio timepiece.
- a glass substrate polishing method is a glass substrate polishing method for polishing a glass substrate using a polishing apparatus, and the polishing apparatus is driven to rotate about a first central axis.
- a work holder that regulates movement of the glass substrate in the surface direction while holding the glass substrate in a state in which a central axis is decentered from the second central axis, and between the glass substrate and the surface plate
- the glass substrate is polished by rotating the surface plate while holding the glass substrate rotatably in the work holder with an abrasive interposed therebetween.
- the warp of the glass substrate is reduced. Can be prevented. Further, the glass substrate is not tilted and held in the work holder. And while holding
- one surface of the glass substrate can be uniformly polished, variations in the finished thickness in the surface direction of the glass substrate can be reduced, and the parallelism of the glass substrate can be improved. As a result, even when a relatively soft material such as a glass substrate is polished, it can be formed to have a desired finished thickness while preventing a reduction in size.
- the plate is characterized in that a regulating member for regulating the polishing amount of the glass substrate is erected toward the standing board.
- a regulating member for regulating the polishing amount of the glass substrate is erected toward the standing board.
- the height H of the regulating member is set to T + 2D. According to this configuration, by setting the height H of the regulating member to T + 2D, the polishing material interposed between the surface plate and one surface of the glass substrate at the time of polishing enters the work holder, In consideration of the size of the particle size of the abrasive interposed between the other surface of the glass substrate and the lower surface of the plate, the glass substrate can be formed in a desired finished thickness.
- the plate is formed with a plurality of work holders, and a plurality of the plates are arranged along a circumferential direction of the surface plate. According to this configuration, it is possible to polish a plurality of glass substrates at a time, so that it is possible to improve work efficiency.
- the package manufacturing method of the present invention is a package manufacturing method capable of enclosing an electronic component in a cavity formed between a plurality of substrates bonded to each other, and among the plurality of substrates, A through-hole forming step for passing through the first substrate in the thickness direction and arranging a through-electrode for conducting the inside of the cavity and the outside of the package; A through hole is formed in the first substrate made of a glass material by using a glass substrate polishing method. According to this configuration, by polishing using the glass substrate polishing method of the present invention, a gap is not formed between the first substrate and the bonding surface, and each substrate is bonded in a good state. And airtightness in the cavity can be ensured.
- the piezoelectric vibrator according to the present invention is manufactured by the package manufacturing method of the present invention. According to this configuration, since the piezoelectric vibrator is manufactured by the package manufacturing method of the present invention, a highly reliable piezoelectric vibrator having excellent vibration characteristics can be provided.
- the oscillator according to the present invention is characterized in that the piezoelectric vibrator of the present invention is electrically connected to an integrated circuit as an oscillator.
- the electronic device is characterized in that the piezoelectric vibrator of the present invention is electrically connected to a time measuring unit.
- the radio timepiece according to the present invention is characterized in that the piezoelectric vibrator of the present invention is electrically connected to a filter portion.
- the oscillator, electronic device, and radio timepiece according to the present invention include the piezoelectric vibrator described above, it is possible to provide a highly reliable product that is particularly excellent in vibration.
- the method for polishing a glass substrate according to the present invention since one surface of the glass substrate can be uniformly polished, variation in the finished thickness in the surface direction of the glass substrate is reduced, and the parallelism of the glass substrate is improved. Can be made. As a result, even when a relatively soft material such as a glass substrate is polished, it can be formed to have a desired finished thickness while preventing a reduction in size. Further, according to the package manufacturing method of the present invention, by performing polishing using the glass substrate polishing method of the present invention, there is no gap between the bonding surface of the first substrate, Each substrate can be bonded in a good state, and airtightness in the cavity can be secured.
- the piezoelectric vibrator according to the present invention since it is a piezoelectric vibrator manufactured by the method for manufacturing a package of the present invention, a piezoelectric vibrator having excellent vibration characteristics and high reliability can be provided. Since the oscillator, electronic device, and radio timepiece according to the present invention include the above-described piezoelectric vibrator, it is possible to provide a product with excellent vibration characteristics and high reliability.
- FIG. 1 is an external perspective view showing an example of a piezoelectric vibrator according to an embodiment of the present invention. It is an internal block diagram of a piezoelectric vibrator, and is a view of a piezoelectric vibrating piece viewed from above with a lid substrate removed.
- FIG. 3 is a cross-sectional view taken along line AA in FIG. 2. It is a disassembled perspective view of a piezoelectric vibrator.
- FIG. 2 is a perspective view of a housing used when manufacturing the piezoelectric vibrator shown in FIG. 1. 2 is a flowchart showing a flow of manufacturing the piezoelectric vibrator shown in FIG. 1.
- FIG. 1 is an external perspective view of the piezoelectric vibrator according to the present embodiment
- FIG. 2 is an internal configuration diagram of the piezoelectric vibrator, and is a view of the piezoelectric vibrating piece viewed from above with the lid substrate removed.
- FIG. 3 is a cross-sectional view of the piezoelectric vibrator taken along line AA shown in FIG. 2, and
- FIG. 4 is an exploded perspective view of the piezoelectric vibrator. As shown in FIGS.
- the piezoelectric vibrator 1 is formed in a box shape in which a base substrate 2 and a lid substrate 3 are laminated in two layers, and the piezoelectric vibrating reed 5 is accommodated in an internal cavity C.
- the surface mount type piezoelectric vibrator 1 is provided.
- the piezoelectric vibrating reed 5 and the external electrodes 6 and 7 installed outside the base substrate 2 are electrically connected by a pair of through electrodes 8 and 9 penetrating the base substrate 2.
- the base substrate 2 is formed in a plate shape with a transparent insulating substrate made of a glass material such as soda lime glass.
- the base substrate 2 is formed with a pair of through holes (through holes) 21 and 22 in which a pair of through electrodes 8 and 9 are formed.
- the through holes 21 and 22 have a tapered cross-sectional shape in which the diameter gradually decreases from the lower surface to the upper surface of the base substrate 2.
- the lid substrate 3 is a transparent insulating substrate made of a glass material, for example, soda-lime glass, and is formed in a plate shape that can be superimposed on the base substrate 2.
- a rectangular recess 3 a for accommodating the piezoelectric vibrating reed 5 is formed on the bonding surface side of the lid substrate 3 to which the base substrate 2 is bonded.
- the concave portion 3 a forms a cavity C that accommodates the piezoelectric vibrating piece 5 when the base substrate 2 and the lid substrate 3 are overlaid.
- the lid substrate 3 is anodically bonded to the base substrate 2 via the bonding layer 23 with the recess 3a facing the base substrate 2 side.
- the piezoelectric vibrating piece 5 is a tuning fork type vibrating piece formed from a piezoelectric material such as quartz, lithium tantalate, or lithium niobate, and vibrates when a predetermined voltage is applied.
- the piezoelectric vibrating reed 5 includes a pair of vibrating arm portions 24 and 25 arranged in parallel and a base portion 26 that integrally fixes the base end sides of the pair of vibrating arm portions 24 and 25 in a plan view.
- An excitation electrode comprising a pair of first excitation electrode and a second excitation electrode (not shown) that vibrates the vibration arm portions 24, 25 on the outer surface of the pair of vibration arm portions 24, 25;
- the piezoelectric vibrating reed 5 configured in this way is bump-bonded onto the lead-out electrodes 27 and 28 formed on the upper surface of the base substrate 2 using bumps B such as gold. ing. More specifically, the first excitation electrode of the piezoelectric vibrating piece 5 is bump-bonded on one lead-out electrode 27 via one mount electrode and bump B, and the second excitation electrode is connected to the other mount electrode and Bump bonding is performed on the other lead-out electrode 28 via the bump B. As a result, the piezoelectric vibrating reed 5 is supported in a state where it floats from the upper surface of the base substrate 2, and the mount electrodes and the routing electrodes 27 and 28 are electrically connected to each other.
- bumps B such as gold.
- the external electrodes 6 and 7 are disposed at both ends of the lower surface of the base substrate 2 in the longitudinal direction, and are electrically connected to the piezoelectric vibrating reed 5 via the through electrodes 8 and 9 and the routing electrodes 27 and 28. ing. More specifically, one external electrode 6 is electrically connected to one mount electrode of the piezoelectric vibrating piece 5 through one through electrode 8 and one routing electrode 27. The other external electrode 7 is electrically connected to the other mount electrode of the piezoelectric vibrating piece 5 through the other through electrode 9 and the other lead-out electrode 28.
- the through-electrodes 8 and 9 are formed by firing a core material portion 31 disposed on the central axis of the through holes 21 and 22 and a glass frit 32 a filled between the core material portion 31 and the through holes 21 and 22.
- the cylindrical body 32 is formed.
- One through electrode 8 is positioned below the routing electrode 27 between the external electrode 6 and the base 26, and the other through electrode 9 is positioned above the external electrode 7 and below the routing electrode 28. Yes.
- the cylindrical body 32 integrally fixes the core portion 31 to the through holes 21 and 22, and the core portion 31 and the cylindrical body 32 completely block the through holes 21 and 22. Thus, the airtightness in the cavity C is maintained.
- FIG. 5 is a perspective view of the housing.
- the core member 31 is a conductive metal core formed in a columnar shape, and both ends are flat and have the same thickness as the thickness of the base substrate 2. Further, when the through electrodes 8 and 9 are formed as finished products, the core material portion 31 is formed in a columnar shape and has the same thickness as the base substrate 2 as described above.
- a housing 37 is formed together with a flat base portion 36 connected to one end portion of the core portion 31. Further, the base portion 36 is polished and removed in the manufacturing process (described later in the manufacturing method). That is, the through electrodes 8 and 9 are ensured to have electrical conductivity through the conductive core portion 31.
- the cylindrical body 32 is obtained by firing a paste-like glass frit 32a, is flat at both ends, has substantially the same thickness as the base substrate 2, and has a through-hole through which the core portion 31 passes in the central axis. .
- the cylindrical body 32 has a tapered outer shape that is the same shape as the through holes 21 and 22.
- the cylindrical body 32 is fired in a state of being embedded in the through holes 21 and 22, firmly fixed to the through holes 21 and 22, and firmly fixing the core portion 31. Yes.
- a predetermined drive voltage is applied to the external electrodes 6 and 7 formed on the base substrate 2.
- a current can be passed through each excitation electrode of the piezoelectric vibrating piece 5, and the pair of vibrating arm portions 24 and 25 can be vibrated at a predetermined frequency in a direction in which the pair of vibrating arm portions 24 and 25 approaches and separates.
- the vibration of the pair of vibrating arm portions 24 and 25 can be used as a time source, a control signal timing source, a reference signal source, or the like.
- a first wafer manufacturing process is performed in which a lid substrate wafer (not shown) to be the lid substrate 3 later is manufactured up to a state immediately before anodic bonding (S20). Specifically, after polishing and cleaning soda-lime glass to a predetermined thickness, a disk-shaped lid substrate wafer is formed by removing the outermost process-affected layer by etching or the like (S21).
- a recess forming step is performed for forming a plurality of cavity recesses 3a in the matrix direction by etching or the like on the bonding surface of the lid substrate wafer (S22). At this point, the first wafer manufacturing process is completed.
- a second wafer manufacturing process is performed in which a base substrate wafer 40 (see FIG. 7), which will later become the base substrate 2, is manufactured to a state just before anodic bonding ( S30).
- a disk-shaped base substrate wafer 40 is formed by removing the outermost work-affected layer by etching or the like (S31).
- a through hole forming process is performed in which a plurality of through holes 21 and 22 for arranging the pair of through electrodes 8 and 9 are formed in the base substrate wafer 40 (S32).
- FIG. 7 to 9 are process diagrams of the through hole forming process, showing a cross section of the base substrate wafer.
- a base substrate wafer 40 formed in the second wafer creation step (S30) is prepared.
- a recess 41 having a predetermined depth Q to be the holes 21 and 22 (see FIG. 2) is formed (S32A: recess formation step). Specifically, by pressing the base substrate wafer 40, the concave portion 41 having a tapered cross section that gradually increases in inner diameter from the bottom surface 41a toward the opening edge is formed.
- the front surface (the other surface) 40a of the base substrate wafer 40 is a surface serving as the lower surface of the above-described base substrate 2 (see FIG. 3), and the back surface (one surface) 40b is the base substrate 2. It is the surface which becomes the upper surface of
- polishing of the base substrate wafer 40 is performed using a single-side polishing apparatus 51 as shown in FIG.
- FIG. 10 is a schematic configuration diagram of a single-side polishing apparatus
- FIG. 11 is a plan view of the single-side polishing apparatus.
- the single-side polishing apparatus 51 includes an upper surface plate 52 having a circular shape in plan view, a lower surface plate (surface plate) 53 formed in the same shape as the upper surface plate 52, and an upper surface plate 52.
- a pressing plate (plate) 54 that presses the base substrate wafer 40 toward the lower surface plate 53, and an abrasive inflow means 55 that flows an abrasive 56 between the upper surface plate 52 and the lower surface plate 53.
- Mainly comprising driving means (not shown) for rotating the lower surface plate 53 around the central axis O1.
- the lower surface plate 53 is made of a special alloy steel that is not polished by contact with the diamond point 60 described later, and its upper surface (polishing surface) 53a is directed radially outward from the central axis (first central axis) O1. Radially, grooves (not shown) are notched.
- the lower surface plate 53 is supported so as to be able to rotate around the central axis O1 by driving the driving means described above.
- the pressing plate 54 has a disk shape made of ceramic or the like, and a plurality of (for example, four) pressing plates 54 are arranged at equal intervals along the circumferential direction of the lower surface plate 53. That is, the central axis (second central axis) O2 of the pressing plate 54 is disposed at a position that is eccentric with respect to the central axis O1 of the lower surface plate 53.
- a plate shaft 61 erected along the central axis O ⁇ b> 2 of the pressing plate 54 is fixed to the upper surface of the pressing plate 54.
- the upper end side of the plate shaft 61 is rotatably supported by the upper surface plate 52, and the pressing plate 54 is configured to rotate about the central axis O2 in conjunction with the rotation of the lower surface plate 53.
- FIG. 12 is a plan view of the pressing plate.
- a plurality (for example, five places) of work holders 62 are provided at equal intervals along the circumferential direction on the lower surface of the pressing plate 54 (the surface facing the lower surface plate 53).
- the work holder 62 is a ring-shaped member having an inner diameter slightly larger than the diameter of the base substrate wafer 40, and is erected from the lower surface toward the lower surface plate 53 (see FIG. 10).
- the work holder 62 accommodates the base substrate wafer 40 in a state in which the central axis of the base substrate wafer 40 is eccentric from the central axis O2 of the pressing plate 54, and restricts movement of the base substrate wafer 40 in the surface direction during polishing. It is supposed to be.
- the plurality of work holders 62 are formed on the pressing plate 54, the plurality of base substrate wafers 40 can be polished together. Therefore, the work efficiency can be improved.
- a plurality of (for example, four) diamond points (regulating members) 60 are provided at equal intervals along the circumferential direction on the outer peripheral side of the lower surface of the pressing plate 54.
- the diamond point 60 has a ball screw structure, is installed on the pressing plate 54, has a base portion 63 having a screw hole penetrating in the thickness direction of the pressing plate 54, and a screw shaft 64 screwed into the screw hole. And a diamond portion 65 attached to the tip (lower end) of the screw shaft 64 and formed to taper toward the tip.
- the diamond point 60 is for controlling the finished thickness T of the base substrate wafer 40, and the tip of the diamond portion 65 is in contact with the lower surface plate 53 at the time of polishing, thereby restricting further polishing. It is.
- the diamond point 60 can adjust the protrusion amount (height) H (see FIG. 13) of the screw shaft 64 and the diamond portion 65 from the lower surface of the pressing plate 54, and thereby the base substrate wafer.
- a finished thickness T of 40 can be set.
- the finished thickness T of the base substrate wafer 40 in the first polishing step (S32B) of the present embodiment is equivalent to the position through which the bottom surface 41a of the recess 41 penetrates, that is, the depth Q of the recess 41.
- the abrasive inflow means 55 is connected to an accommodating portion (not shown) in which the abrasive 56 is stored and is connected to the accommodating portion via a pump, and supplies the abrasive 56 supplied from the accommodating portion to the upper surface 53 a of the lower surface plate 53.
- a supply unit 70 is disposed coaxially with the central axis O ⁇ b> 1 of the lower surface plate 53, and includes a plurality of supply pipes 72 extending radially from the supply unit 70.
- the supply pipe 72 extends between the pressing plates 54 along the radially outer side of the lower surface plate 53, and the supply port at the tip is disposed on the inner peripheral side of the plate shaft 61 in the radial direction of the lower surface plate 53. Yes.
- the base substrate wafer 40 is set in each work holder 62 of the pressing plate 54 as shown in FIG. Specifically, the base substrate wafer 40 is water bonded to the lower surface of the pressing plate 54 with the front surface 40 a of the base substrate wafer 40 facing the lower surface of the pressing plate 54. Note that the base substrate wafer 40 is simply attached to the lower surface of the pressing plate 54, and therefore, the base substrate wafer 40 is peeled off from the pressing plate 54 after a predetermined time has elapsed or immediately after the start of polishing. In other words, in this embodiment, the base substrate wafer 40 only needs to be attracted to the pressing plate 54 until the base substrate wafer 40 is transferred to the polishing start position.
- the protrusion amount H of the diamond point 60 (screw shaft 64 and diamond portion 65) is adjusted based on the finished thickness T of the base substrate wafer 40.
- the protrusion amount H of the diamond point 60 is the final thickness T of the base substrate wafer 40 at the time when the recess 41 of the base substrate wafer 40 penetrates, and the polishing agent 56 supplied from the polishing agent inflow means 55.
- the maximum particle size of D is D, it is preferably set to about T + 2D.
- the abrasive 56 may be interposed between the surface 40a of the base substrate wafer 40 and the lower surface of the pressing plate 54 as described above.
- the surface 40a of the wafer 40 for use is hardly polished, and there is no risk of problems after polishing.
- the abrasive inflow means 55 is driven to supply the abrasive 56 onto the lower surface plate 53 from the supply port.
- the pressing plate 54 is lowered, and the back surface 40 b of the base substrate wafer 40 is pressed toward the lower surface plate 53 with a predetermined pressing force via the polishing agent 56.
- the driving means of the lower surface plate 53 is driven to rotate the lower surface plate 53 around the central axis O1. Thereby, polishing of the base substrate wafer 40 is started.
- the pressing plate 54 rotates around the central axis O2 by the frictional force between the pressing plate 54 and the base substrate wafer 40 (see arrow H in FIG. 11).
- the pressing plate 54 rotates about the central axis O2 and the base substrate wafer 40 rotates about the central axis in conjunction with the rotation of the lower surface plate 53. It is like that.
- the lower surface plate 53 and the base substrate wafer 40 move relative to each other with the abrasive 56 interposed therebetween, so that the back surface 40b of the base substrate wafer 40 can be continuously polished. .
- the base substrate wafer 40 is polished while freely rotating in the work holder 62, variations in the finished thickness T in the surface are prevented, and a highly parallel base substrate wafer 40 is produced. can do.
- the base substrate wafer 40 is polished by the finished thickness T, so that the bottom surface 41a of the recess 41 formed with a predetermined depth Q on the surface 40a of the base substrate wafer 40 becomes the base
- the back surface 40b of the substrate wafer 40 is penetrated.
- the through holes 21 and 22 penetrating in the thickness direction can be formed in the base substrate wafer 40.
- the through holes 21 and 22 can be formed by penetrating this recessed part 41. Therefore, a through-hole is directly formed in the base substrate wafer 40. There is no formation. Therefore, burrs are not generated at the opening edges of the through holes 21 and 22, and thus the through holes 21 and 22 having good shapes can be formed.
- FIGS. 16 to 18 are process diagrams showing the through electrode forming process, and show a cross section of the base substrate wafer 40.
- a through electrode forming step (S33) for forming the through electrodes 8 and 9 in the through holes 21 and 22 formed in the first polishing step (S32B) is performed.
- the core member 31 of the housing 37 is inserted from the back surface 40b side of the base substrate wafer 40 into the through holes 21 and 22 (S33A).
- the gap between the through holes 21 and 22 and the core part 31 is filled with paste-like glass frit 32a (S33B), and fired at a predetermined temperature to solidify the glass frit 32a (S33C).
- the paste-like glass frit 32 a can be reliably filled into the through holes 21 and 22.
- the base portion 36 is formed in a flat plate shape, the housing 37 and the base substrate wafer 40 on which the housing 37 is installed are stable without rattling or the like. Can be planned.
- the back surface 40b of the base substrate wafer 40 is formed as a highly parallel surface with little variation in the finished thickness T in the first polishing step described above, it is possible to reliably prevent the housing 37 from rattling. be able to.
- the glass frit 32a is baked and solidified to fix the housing 37 in a close contact state, and can be fixed to the through holes 21 and 22 to seal the through holes 21 and 22.
- the base portion 36 of the housing 37 is polished and removed (S33D: second polishing step).
- S33D second polishing step
- a conductive material is patterned on the upper surface of the base substrate wafer 40 to perform a bonding layer forming process for forming the bonding layer 23 (S34), and a routing electrode forming process is performed (S35). In this way, the manufacturing process of the base substrate wafer 40 is completed.
- the piezoelectric vibrating reed 5 is disposed in the cavity C formed by the base substrate wafer 40 and the lid substrate wafer formed as described above and mounted on the through electrodes 8 and 9.
- a wafer bonded body is formed by anodically bonding the lid substrate wafer.
- a pair of external electrodes 6, 7 electrically connected to the pair of through electrodes 8, 9 are formed, and the frequency of the piezoelectric vibrator 1 is finely adjusted.
- the wafer bonded body is cut into small pieces, and the internal electrical characteristics are inspected to form a package (piezoelectric vibrator 1) containing the piezoelectric vibrating piece.
- the pressing plate 54 is rotated around the central axis O2 in conjunction with the rotation of the lower surface plate 53, and the base substrate wafer 40 is rotated in the work holder 62.
- the base substrate wafer 40 rotates in the work holder 62 by the frictional force between the lower surface plate 53 and the base substrate wafer 40, and the base substrate wafer 40 Due to the frictional force with the pressing plate 54, the pressing plate 54 rotates around the central axis O2. That is, when the base substrate wafer 40 is polished without being attracted and fixed to the pressing plate 54, the base substrate wafer 40 is polished while being attracted and fixed to the pressing plate 54 using a suction pad or the like as in the prior art.
- the base substrate wafer 40 is not tilted and held in the work holder 62.
- the back surface 40b of the base substrate wafer 40 and the upper surface 53a of the lower surface plate 53 can be arranged in parallel across the entire surface direction, so that the base substrate wafer 40 extends over the entire surface direction. It is possible to press with a uniform pressing force. Therefore, since the back surface 40b of the base substrate wafer 40 can be uniformly polished, variations in the finished thickness T in the surface direction of the base substrate wafer 40 can be reduced, and the parallelism of the base substrate wafer 40 can be improved. Can do. As a result, even when a relatively soft material such as a glass substrate is polished, it is possible to prevent a reduction in the size.
- the finished thickness T of the base substrate wafer 40 is controlled based on the polishing rate of the abrasive 56 as in the prior art.
- the control of the finished thickness T of the base substrate wafer 40 can be easily managed. That is, the polishing rate of the polishing agent 56 has a problem that it is difficult to control the finished thickness T because the polishing rate changes with time due to the deterioration of the polishing agent 56.
- the finished thickness T can be adjusted only by determining the protrusion amount H of the screw shaft 64 and the diamond portion 65 before polishing.
- the diamond portion 65 and the lower surface plate 53 are in contact with each other, further polishing can be regulated, so that the control of the finished thickness T of the base substrate wafer 40 can be easily managed with high accuracy. it can.
- the protrusion amount H of the diamond point 60 to T + 2D, it penetrates into the abrasive 56 and the work holder 62 interposed between the lower surface plate 53 and the back surface 40b of the base substrate wafer 40 during polishing.
- the base substrate wafer 40 may be formed to a desired finished thickness. it can.
- both the wafers can be bonded in a good condition without creating a gap between the bonded surfaces of the both wafers. Airtightness in the cavity C can be ensured. As a result, the highly reliable piezoelectric vibrator 1 having excellent vibration characteristics can be provided.
- the oscillator 100 is configured by configuring the piezoelectric vibrator 1 as an oscillator electrically connected to the integrated circuit 101.
- the oscillator 100 includes a substrate 103 on which an electronic component 102 such as a capacitor is mounted. On the substrate 103, the above-described integrated circuit 101 for the oscillator is mounted, and the piezoelectric vibrator 1 is mounted in the vicinity of the integrated circuit 101.
- the electronic component 102, the integrated circuit 101, and the piezoelectric vibrator 1 are electrically connected by a wiring pattern (not shown). Each component is molded with a resin (not shown).
- the piezoelectric vibrating piece 5 in the piezoelectric vibrator 1 vibrates. This vibration is converted into an electric signal by the piezoelectric characteristics of the piezoelectric vibrating piece 5 and input to the integrated circuit 101 as an electric signal.
- the input electrical signal is subjected to various processes by the integrated circuit 101 and is output as a frequency signal.
- the piezoelectric vibrator 1 functions as an oscillator.
- an RTC real-time clock
- a function for controlling the time, providing a time, a calendar, and the like can be added.
- the quality of the oscillator 100 itself can be improved in the same manner. In addition to this, it is possible to obtain a highly accurate frequency signal that is stable over a long period of time.
- the portable information device 110 having the above-described piezoelectric vibrator 1 will be described as an example of the electronic device.
- the portable information device 110 according to the present embodiment is represented by, for example, a mobile phone, and is a development and improvement of a wrist watch in the related art. The appearance is similar to that of a wristwatch, and a liquid crystal display is arranged in a portion corresponding to a dial so that the current time and the like can be displayed on this screen.
- the portable information device 110 includes the piezoelectric vibrator 1 and a power supply unit 111 for supplying power.
- the power supply unit 111 is made of, for example, a lithium secondary battery.
- the power supply unit 111 includes a control unit 112 that performs various controls, a clock unit 113 that counts time, a communication unit 114 that communicates with the outside, a display unit 115 that displays various types of information, A voltage detection unit 116 that detects the voltage of the functional unit is connected in parallel.
- the power unit 111 supplies power to each functional unit.
- the control unit 112 controls each function unit to control operation of the entire system such as transmission and reception of voice data, measurement and display of the current time, and the like.
- the control unit 112 includes a ROM in which a program is written in advance, a CPU that reads and executes the program written in the ROM, and a RAM that is used as a work area of the CPU.
- the clock unit 113 includes an integrated circuit including an oscillation circuit, a register circuit, a counter circuit, an interface circuit, and the like, and the piezoelectric vibrator 1.
- the piezoelectric vibrator 1 When a voltage is applied to the piezoelectric vibrator 1, the piezoelectric vibrating reed 5 vibrates, and this vibration is converted into an electric signal by the piezoelectric characteristics of the crystal and is input to the oscillation circuit as an electric signal.
- the output of the oscillation circuit is binarized and counted by a register circuit and a counter circuit. Then, signals are transmitted to and received from the control unit 112 via the interface circuit, and the current time, current date, calendar information, or the like is displayed on the display unit 115.
- the communication unit 114 has functions similar to those of a conventional mobile phone, and includes a radio unit 117, a voice processing unit 118, a switching unit 119, an amplification unit 120, a voice input / output unit 121, a telephone number input unit 122, and a ring tone generation unit. 123 and a call control memory unit 124.
- the wireless unit 117 exchanges various data such as audio data with the base station via the antenna 125.
- the audio processing unit 118 encodes and decodes the audio signal input from the radio unit 117 or the amplification unit 120.
- the amplifying unit 120 amplifies the signal input from the audio processing unit 118 or the audio input / output unit 121 to a predetermined level.
- the voice input / output unit 121 includes a speaker, a microphone, and the like, and amplifies a ringtone and a received voice or collects a voice.
- the ring tone generator 123 generates a ring tone in response to a call from the base station.
- the switching unit 119 switches the amplifying unit 120 connected to the voice processing unit 118 to the ringing tone generating unit 123 only when an incoming call is received, so that the ringing tone generated in the ringing tone generating unit 123 is transmitted via the amplifying unit 120.
- the call control memory unit 124 stores a program related to incoming / outgoing call control of communication.
- the telephone number input unit 122 includes, for example, a number key from 0 to 9 and other keys. By pressing these number keys and the like, a telephone number of a call destination is input.
- the voltage detection unit 116 detects the voltage drop and notifies the control unit 112 of the voltage drop.
- the predetermined voltage value at this time is a value set in advance as a minimum voltage necessary for stably operating the communication unit 114, and is, for example, about 3V.
- the control unit 112 prohibits the operations of the radio unit 117, the voice processing unit 118, the switching unit 119, and the ring tone generation unit 123. In particular, it is essential to stop the operation of the wireless unit 117 with high power consumption. Further, the display unit 115 displays that the communication unit 114 has become unusable due to insufficient battery power.
- the operation of the communication unit 114 can be prohibited by the voltage detection unit 116 and the control unit 112, and that effect can be displayed on the display unit 115.
- This display may be a text message, but as a more intuitive display, a x (X) mark may be attached to the telephone icon displayed at the top of the display surface of the display unit 115.
- the function of the communication part 114 can be stopped more reliably by providing the power supply cutoff part 126 that can selectively cut off the power of the part related to the function of the communication part 114.
- the portable information device 110 of the present embodiment since the high-quality piezoelectric vibrator 1 is provided, the quality of the portable information device itself can be improved as well. In addition to this, it is possible to display highly accurate clock information that is stable over a long period of time.
- the radio timepiece 130 includes the piezoelectric vibrator 1 electrically connected to the filter unit 131.
- the radio timepiece 130 receives a standard radio wave including timepiece information and is accurate. It is a clock with a function of automatically correcting and displaying the correct time.
- transmitting stations transmitting stations that transmit standard radio waves in Fukushima Prefecture (40 kHz) and Saga Prefecture (60 kHz), each transmitting standard radio waves.
- Long waves such as 40 kHz or 60 kHz have the property of propagating the surface of the earth and the property of propagating while reflecting the ionosphere and the surface of the earth, so the propagation range is wide, and the above two transmitting stations cover all of Japan. is doing.
- the antenna 132 receives a long standard wave of 40 kHz or 60 kHz.
- the long-wave standard radio wave is obtained by subjecting time information called a time code to AM modulation on a 40 kHz or 60 kHz carrier wave.
- the received long standard wave is amplified by the amplifier 133 and filtered and tuned by the filter unit 131 having the plurality of piezoelectric vibrators 1.
- the piezoelectric vibrator 1 in this embodiment includes crystal vibrator portions 138 and 139 having resonance frequencies of 40 kHz and 60 kHz that are the same as the carrier frequency described above.
- the filtered signal having a predetermined frequency is detected and demodulated by the detection and rectification circuit 134. Subsequently, the time code is taken out via the waveform shaping circuit 135 and counted by the CPU 136.
- the CPU 136 reads information such as the current year, accumulated date, day of the week, and time. The read information is reflected in the RTC 137, and accurate time information is displayed. Since the carrier wave is 40 kHz or 60 kHz, the crystal vibrator units 138 and 139 are preferably vibrators having the tuning fork type structure described above.
- the frequency of the long standard radio wave is different overseas.
- a standard radio wave of 77.5 KHz is used. Accordingly, when the radio timepiece 130 that can be used overseas is incorporated in a portable device, the piezoelectric vibrator 1 having a frequency different from that in Japan is required.
- the radio-controlled timepiece 130 of the present embodiment since the high-quality piezoelectric vibrator 1 is provided, the quality of the radio-controlled timepiece itself can be improved in the same manner. In addition to this, it is possible to count time stably and with high accuracy over a long period of time.
- the tuning fork type piezoelectric vibrating piece 5 has been described as an example, but is not limited to the tuning fork type.
- a through-electrode may be formed by the above-described method when a thickness-shear vibration piece or an AT vibration piece is mounted in a cavity and these vibration pieces and an external electrode are electrically connected.
- the two-layer structure type in which the piezoelectric vibrating reed 5 is housed in the cavity C formed between the base substrate 2 and the lid substrate 3 has been described. It is also possible to adopt a three-layer structure type in which the piezoelectric substrate on which the resonator element 5 is formed is joined between the base substrate 2 and the lid substrate 3 so as to be sandwiched from above and below. Furthermore, in the above-described embodiment, the case where the glass frit 32a serving as a filler is filled between the core part 31 and the through holes 21 and 22 has been described. However, the present invention is not limited thereto, and a conductive filler is used. The through holes 21 and 22 may be filled and the structure itself may be a through electrode.
- the through holes 21 and 22 are not limited to a tapered shape, and may be cylindrical through holes that pass straight through the base substrate 2.
- Variations in the finished thickness in the surface direction of the glass substrate can be reduced, and airtightness in the cavity can be ensured.
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Abstract
Description
このような2層構造タイプの圧電振動子としては、ガラス材料からなるベース基板にキャビティに連通する貫通孔と、この貫通孔内に配置された貫通電極と、ベース基板の外面側に設けられ、貫通電極を介して圧電振動片と電気的に接続された外部電極とを備えたものがある。
片減りがあるベース基板をリッド基板に接合しようすると、互いの接合面との間に隙間が生じる虞があり、その結果、キャビティ内の気密を確保することができない場合がある。
この構成によれば、ガラス基板に直接貫通孔を形成する場合に比べて、貫通孔の開口縁等にバリが発生することがないので、良好な形状の貫通孔を形成することができる。
この構成によれば、規制部材と定盤とが接触することで、それ以上の研磨を規制することができ、ガラス基板の仕上がり厚みの制御を容易に行うことができる。すなわち、従来のように研磨材の研磨レート等に基づいて仕上がり厚みの制御を行う場合には、研磨材の劣化により研磨材の研磨レートが経時変化するため、膜厚制御が難しいという問題があった。
これに対して、本発明の構成によれば、研磨前にプレートからの規制部材の突出量を決定するだけで、ガラス基板の仕上がり厚みを調整することができる。そのため、ガラス基板の仕上がり厚みを高精度、かつ容易に管理することができる。
この構成によれば、規制部材の高さHを、T+2Dに設定することで、研磨時に定盤とガラス基板の一方の面との間に介在する研磨材、及びワークホルダ内に侵入して、ガラス基板の他方の面とプレートの下面との間に介在する研磨材の粒径の大きさを考慮し、ガラス基板を所望の仕上がり厚みに形成することができる。
この構成によれば、複数のガラス基板を一括して研磨することができるので、作業効率の向上を図ることができる。
この構成によれば、上記本発明のガラス基板の研磨方法を用いて研磨を行うことで、第1基板の接合面との間に隙間を生じさせることがなく、良好な状態で各基板を接合することができ、キャビティ内の気密を確保することができる。
この構成によれば、上記本発明のパッケージの製造方法によって製造された圧電振動子であるため、振動特性に優れた信頼性の高い圧電振動子を提供することができる。
また、本発明に係るパッケージの製造方法によれば、上記本発明のガラス基板の研磨方法を用いて研磨を行うことで、第1基板の接合面との間に隙間を生じさせることがなく、良好な状態で各基板を接合することができ、キャビティ内の気密を確保することができる。
また、本発明に係る圧電振動子によれば、上記本発明のパッケージの製造方法によって製造された圧電振動子であるため、振動特性に優れ信頼性の高い圧電振動子を提供することができる。
本発明に係る発振器、電子機器及び電波時計においては、上述した圧電振動子を備えているので、振動特性に優れ信頼性の高い製品を提供することができる。
(圧電振動子)
図1は、本実施形態における圧電振動子の外観斜視図であり、図2は圧電振動子の内部構成図であって、リッド基板を取り外した状態で圧電振動片を上方から見た図ある。また、図3は図2に示すA-A線に沿った圧電振動子の断面図であり、図4は圧電振動子の分解斜視図である。
図1~4に示すように、圧電振動子1は、ベース基板2とリッド基板3とで2層に積層された箱状に形成されており、内部のキャビティC内に圧電振動片5が収納された表面実装型の圧電振動子1である。そして、圧電振動片5とベース基板2の外側に設置された外部電極6,7とが、ベース基板2を貫通する一対の貫通電極8,9によって電気的に接続されている。
この凹部3aは、ベース基板2およびリッド基板3が重ね合わされたときに、圧電振動片5を収容するキャビティCを形成する。そして、リッド基板3は、凹部3aをベース基板2側に対向させた状態でベース基板2に対して接合層23を介して陽極接合されている。
この圧電振動片5は、平行に配置された一対の振動腕部24,25と、一対の振動腕部24,25の基端側を一体的に固定する基部26とからなる平面視略コの字型で、一対の振動腕部24,25の外表面上には、振動腕部24,25を振動させる図示しない一対の第1の励振電極と第2の励振電極とからなる励振電極と、第1の励振電極及び第2の励振電極に電気的に接続された一対のマウント電極とを有している(何れも不図示)。
貫通電極8,9は、筒体32が芯材部31をスルーホール21,22に対して一体的に固定しており、芯材部31及び筒体32がスルーホール21,22を完全に塞いでキャビティC内の気密を維持している。
芯材部31は、円柱状に形成された導電性の金属芯材で、両端が平坦で且つベース基板2の厚みと同じ厚さである。また、貫通電極8,9が完成品として形成された場合には、上述したように芯材部31は、円柱状でベース基板2の厚みと同じ厚さとなるように形成されているが、製造過程では、図5に示すように、芯材部31の一方の端部に連結された平板状の土台部36と共に鋲体37を形成している。また、この土台部36は製造過程において、研磨されて除去されている(後に製造方法で説明する)。
すなわち、貫通電極8、9は、導電性の芯材部31を通して電気導通性が確保されている。
このように構成された圧電振動子1を作動させる場合には、ベース基板2に形成された外部電極6,7に対して、所定の駆動電圧を印加する。これにより、圧電振動片5の各励振電極に電流を流すことができ、一対の振動腕部24,25を接近・離間させる方向に所定の周波数で振動させることができる。そして、この一対の振動腕部24,25の振動を利用して、時刻源、制御信号のタイミング源やリファレンス信号源等として利用することができる。
次に、上述した圧電振動子の製造方法について、図6に示すフローチャートを参照しながら説明する。
まず、後にリッド基板3となるリッド基板用ウエハ(不図示)を、陽極接合を行う直前の状態まで作製する第1のウエハ作製工程を行う(S20)。具体的には、ソーダ石灰ガラスを所定の厚さまで研磨加工して洗浄した後に、エッチング等により最表面の加工変質層を除去した円板状のリッド基板用ウエハを形成する(S21)。次いで、リッド基板用ウエハの接合面に、エッチング等により行列方向にキャビティ用の凹部3aを複数形成する凹部形成工程を行う(S22)。この時点で、第1のウエハ作製工程が終了する。
まず、図7に示すように、第2のウエハ作成工程(S30)で形成されたベース基板用ウエハ40を用意し、図8に示すように、ベース基板用ウエハ40の表面40aに、後にスルーホール21,22(図2参照)となる所定深さQの凹部41を形成する(S32A:凹部形成工程)。具体的には、ベース基板用ウエハ40に対してプレス加工を行なうことで、底面41aから開口縁に向かうにつれ内径が漸次広がる断面テーパ形状の凹部41を形成する。なお、本実施形態では、ベース基板用ウエハ40の表面(他方の面)40aが上述したベース基板2(図3参照)の下面となる面であり、裏面(一方の面)40bがベース基板2の上面となる面である。
次に、ベース基板用ウエハ40の裏面40bを研磨して、凹部41をベース基板用ウエハ40の厚さ方向に貫通させる(S32B:第1研磨工程)。
ベース基板用ウエハ40の研磨は、図10に示すような、片面研磨装置51を使用して行う。
図10は片面研磨装置の概略構成図であり、図11は片面研磨装置の平面図である。
図10,11に示すように、片面研磨装置51は、平面視円形状の上定盤52と、上定盤52と同形状に形成された下定盤(定盤)53と、上定盤52に連結され、ベース基板用ウエハ40を下定盤53に向けて押圧する押圧プレート(プレート)54と、上定盤52と下定盤53との間に研磨剤56を流入する研磨剤流入手段55と、下定盤53を中心軸O1回りに回転駆動させる駆動手段(不図示)とを主に備えている。
図12に示すように、押圧プレート54の下面(下定盤53との対向面)には、周方向に沿って等間隔に複数(例えば、5箇所)のワークホルダ62が設けられている。このワークホルダ62は、ベース基板用ウエハ40の直径よりも僅かに大きい内径を有するリング状の部材であり、下面から下定盤53(図10参照)に向けて立設されている。すなわち、ワークホルダ62は、ベース基板用ウエハ40の中心軸を押圧プレート54の中心軸O2から偏心させた状態で収容しており、研磨時においてベース基板用ウエハ40の面方向への移動を規制するようになっている。このように、押圧プレート54に複数のワークホルダ62が形成されているため、複数のベース基板用ウエハ40を一括して研磨することができる。そのため、作業効率の向上を図ることができる。
上述した片面研磨装置51を用いて第1研磨工程(S32B)を行うには、まず図13に示すように、ベース基板用ウエハ40を押圧プレート54の各ワークホルダ62内にセットする。具体的には、ベース基板用ウエハ40の表面40aを押圧プレート54の下面に向けた状態で、押圧プレート54の下面にベース基板用ウエハ40を水貼りする。なお、ベース基板用ウエハ40は押圧プレート54の下面に水貼りしているだけなので、所定時間経過後または研磨開始直後には押圧プレート54からベース基板用ウエハ40が剥がれることになる。すなわち、本実施形態では、研磨開始位置にベース基板用ウエハ40が搬送されるまで、ベース基板用ウエハ40が押圧プレート54に吸着されていればよい。
その後、下定盤53の駆動手段を駆動させ、下定盤53を中心軸O1回りに回転させる。これにより、ベース基板用ウエハ40の研磨が開始する。
続いて、図6,16に示すように、第1研磨工程(S32B)で形成されたスルーホール21,22内に貫通電極8,9を形成する貫通電極形成工程(S33)を行う。
具体的には、ベース基板用ウエハ40の裏面40b側からスルーホール21,22内に向けて、鋲体37の芯材部31を挿入する(S33A)。その後、図17に示すように、スルーホール21、22と芯材部31との隙間にペースト状のガラスフリット32aを充填し(S33B)、所定の温度で焼成しガラスフリット32aを固化させる(S33C)。
そして、ガラスフリット32aは焼成されて固化し、鋲体37を密着状態で固定するとともに、スルーホール21,22に固着してスルーホール21,22を封止することができる。
そして、一対の貫通電極8,9にそれぞれ電気的に接続された一対の外部電極6,7を形成し、圧電振動子1の周波数を微調整する。そして、ウエハ接合体を小片化する切断を行い、内部の電気特性検査を行うことで圧電振動片を収容したパッケージ(圧電振動子1)が形成される。
この構成によれば、第1研磨工程において、下定盤53とベース基板用ウエハ40との間の摩擦力によって、ベース基板用ウエハ40がワークホルダ62内を回転するとともに、ベース基板用ウエハ40と押圧プレート54との摩擦力により、押圧プレート54が中心軸O2回りに回転することになる。すなわち、ベース基板用ウエハ40を押圧プレート54に吸着固定させず研磨することで、従来のように吸着パッド等を用いてベース基板用ウエハ40を押圧プレート54に吸着固定させた状態で研磨する場合と異なり、ベース基板用ウエハ40の反りを防止することができる。また、ワークホルダ62内でベース基板用ウエハ40が傾いて保持されることもない。
これにより、ベース基板用ウエハ40の裏面40bと下定盤53の上面53aとを、互いの面方向全域に亘って平行に配置することができるので、ベース基板用ウエハ40を面方向全域に亘って、均一な押圧力で押圧することができる。よって、ベース基板用ウエハ40の裏面40bを均一に研磨することができるので、ベース基板用ウエハ40の面方向における仕上がり厚みTのばらつきを低減させ、ベース基板用ウエハ40の平行度を向上させることができる。その結果、ガラス基板等の比較的軟らかい材料を研磨する場合であっても、片減り等を防止することができる。
しかも、ダイヤモンドポイント60の突出量Hを、T+2Dに設定することで、研磨時に下定盤53とベース基板用ウエハ40の裏面40bとの間に介在する研磨剤56、及びワークホルダ62内に侵入して、ベース基板用ウエハ40の表面40aと押圧プレート54の下面との間に介在する研磨剤56の粒径の大きさを考慮し、ベース基板用ウエハ40を所望の仕上がり厚みに形成することができる。
次に、本発明に係る発振器の一実施形態について、図19を参照しながら説明する。
本実施形態の発振器100は、図19に示すように、圧電振動子1を、集積回路101に電気的に接続された発振子として構成したものである。この発振器100は、コンデンサ等の電子部品102が実装された基板103を備えている。基板103には、発振器用の上述した集積回路101が実装されており、この集積回路101の近傍に、圧電振動子1が実装されている。これら電子部品102、集積回路101及び圧電振動子1は、図示しない配線パターンによってそれぞれ電気的に接続されている。なお、各構成部品は、図示しない樹脂によりモールドされている。
また、集積回路101の構成を、例えば、RTC(リアルタイムクロック)モジュール等を要求に応じて選択的に設定することで、時計用単機能発振器等の他、当該機器や外部機器の動作日や時刻を制御したり、時刻やカレンダー等を提供したりする機能を付加することができる。
次に、本発明に係る電子機器の一実施形態について、図20を参照して説明する。なお電子機器として、上述した圧電振動子1を有する携帯情報機器110を例にして説明する。始めに本実施形態の携帯情報機器110は、例えば、携帯電話に代表されるものであり、従来技術における腕時計を発展、改良したものである。外観は腕時計に類似し、文字盤に相当する部分に液晶ディスプレイを配し、この画面上に現在の時刻等を表示させることができるものである。また、通信機として利用する場合には、手首から外し、バンドの内側部分に内蔵されたスピーカ及びマイクロフォンによって、従来技術の携帯電話と同様の通信を行うことが可能である。しかしながら、従来の携帯電話と比較して、格段に小型化及び軽量化されている。
無線部117は、音声データ等の各種データを、アンテナ125を介して基地局と送受信のやりとりを行う。音声処理部118は、無線部117又は増幅部120から入力された音声信号を符号化及び複号化する。増幅部120は、音声処理部118又は音声入出力部121から入力された信号を、所定のレベルまで増幅する。音声入出力部121は、スピーカやマイクロフォン等からなり、着信音や受話音声を拡声したり、音声を集音したりする。
なお、呼制御メモリ部124は、通信の発着呼制御に係るプログラムを格納する。また、電話番号入力部122は、例えば、0から9の番号キー及びその他のキーを備えており、これら番号キー等を押下することにより、通話先の電話番号等が入力される。
なお、通信部114の機能に係る部分の電源を、選択的に遮断することができる電源遮断部126を備えることで、通信部114の機能をより確実に停止することができる。
本実施形態の電波時計130は、図21に示すように、フィルタ部131に電気的に接続された圧電振動子1を備えたものであり、時計情報を含む標準の電波を受信して、正確な時刻に自動修正して表示する機能を備えた時計である。
日本国内には、福島県(40kHz)と佐賀県(60kHz)とに、標準の電波を送信する送信所(送信局)があり、それぞれ標準電波を送信している。40kHz若しくは60kHzのような長波は、地表を伝播する性質と、電離層と地表とを反射しながら伝播する性質とを併せもつため、伝播範囲が広く、上述した2つの送信所で日本国内を全て網羅している。
以下、電波時計130の機能的構成について詳細に説明する。
アンテナ132は、40kHz若しくは60kHzの長波の標準電波を受信する。長波の標準電波は、タイムコードと呼ばれる時刻情報を、40kHz若しくは60kHzの搬送波にAM変調をかけたものである。受信された長波の標準電波は、アンプ133によって増幅され、複数の圧電振動子1を有するフィルタ部131によって濾波、同調される。
本実施形態における圧電振動子1は、上述した搬送周波数と同一の40kHz及び60kHzの共振周波数を有する水晶振動子部138、139をそれぞれ備えている。
続いて、波形整形回路135を介してタイムコードが取り出され、CPU136でカウントされる。CPU136では、現在の年、積算日、曜日、時刻等の情報を読み取る。読み取られた情報は、RTC137に反映され、正確な時刻情報が表示される。
搬送波は、40kHz若しくは60kHzであるから、水晶振動子部138、139は、上述した音叉型の構造を持つ振動子が好適である。
例えば、上述した実施形態では、音叉型の圧電振動片5を例に挙げて説明したが、音叉型に限られるものではない。例えば、厚み滑り振動片やAT振動片をキャビティ内にマウントし、これらの振動片と外部電極とを電気的に接続する際に、上述した方法により貫通電極を形成しても構わない。
また、上述した実施形態では、ベース基板2とリッド基板3との間に形成されたキャビティC内に圧電振動片5を収納した2層構造タイプのものについて説明したが、これに限らず、圧電振動片5が形成された圧電基板をベース基板2とリッド基板3とで上下から挟み込むように接合した3層構造タイプを採用することも可能である。
さらに、上述した実施形態では、芯材部31とスルーホール21,22との間に充填材となるガラスフリット32aを充填する場合について説明したが、これに限らず、導電性を有する充填材をスルーホール21,22に充填し、それ自体を貫通電極とする構成にしてもよい。このような充填材としては、金属微粒子および複数のガラスビーズを含んだものや、上述した導電ペーストを用いることが可能である。
また、スルーホール21,22はテーパ状に限られず、ベース基板2を真っ直ぐに貫通する円柱状のスルーホールとしてもよい。
Claims (10)
- 研磨装置を用いてガラス基板を研磨するガラス基板の研磨方法であって、
前記研磨装置は、第1中心軸回りに回転駆動する定盤と、前記第1中心軸から偏心した第2中心軸の周りを回転可能とされ、前記ガラス基板を前記定盤に向けて押圧するプレートと、前記プレートに形成され、前記ガラス基板の中心軸を前記第2中心軸から偏心させた状態で前記ガラス基板を保持しつつ、前記ガラス基板の面方向への移動を規制するワークホルダとを備え、
前記ガラス基板と前記定盤との間に研磨材を介在させた状態で、前記ガラス基板を前記ワークホルダ内で回転可能に保持しつつ、前記定盤を回転させて前記ガラス基板を研磨することを特徴とするガラス基板の研磨方法。 - 請求項1記載のガラス基板の研磨方法であって、
前記ガラス基板の一方の面を研磨することで、前記ガラス基板の他方の面に形成された凹部を貫通させ、前記ガラス基板に貫通孔を形成することを特徴とするガラス基板の研磨方法。 - 請求項1または請求項2記載のガラス基板の研磨方法であって、
前記プレートには、前記ガラス基板の研磨量を規制する規制部材が、前記常盤に向けて立設されていることを特徴とするガラス基板の研磨方法。 - 請求項3記載のガラス基板の研磨方法であって、
前記ガラス基板の仕上がり厚みをT、前記研磨材の最大粒子径をDとすると、
前記規制部材の高さHを、T+2Dに設定することを特徴とするガラス基板の研磨方法。 - 請求項1ないし請求項4の何れか1項に記載のガラス基板の研磨方法であって、
前記プレートには、複数の前記ワークホルダが形成され、前記プレートが前記定盤の周方向に沿って複数配されていることを特徴とするガラス基板の研磨方法。 - 互いに接合された複数の基板との間に形成されたキャビティ内に、電子部品を封入可能なパッケージの製造方法であって、
前記複数の基板のうち、第1基板を厚さ方向に貫通し、前記キャビティの内側と前記パッケージの外側とを導通する貫通電極を配するための貫通孔形成工程を有し、
前記貫通孔形成工程は、
請求項1ないし請求項5の何れか1項に記載のガラス基板の研磨方法を用い、ガラス材料からなる前記第1基板に貫通孔を形成することを特徴とするパッケージの製造方法。 - 請求項6記載のパッケージの製造方法によって製造されたことを特徴とする圧電振動子。
- 請求項7に記載の前記圧電振動子が、発振子として集積回路に電気的に接続されていることを特徴とする発振器。
- 請求項7に記載の前記圧電振動子が、計時部に電気的に接続されていることを特徴とする電子機器。
- 請求項7記載の前記圧電振動子が、フィルタ部に電気的に接続されていることを特徴とする電波時計。
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PCT/JP2009/053331 WO2010097902A1 (ja) | 2009-02-25 | 2009-02-25 | ガラス基板の研磨方法、パッケージの製造方法、圧電振動子、発振器、電子機器並びに電波時計 |
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TW098144769A TW201041024A (en) | 2009-02-25 | 2009-12-24 | Glass substrate polishing method, package manufacturing method, piezoelectric oscillator, oscillator, electronic device, and radio-controlled watch |
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