WO2010079686A1 - 光検出器 - Google Patents
光検出器 Download PDFInfo
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- WO2010079686A1 WO2010079686A1 PCT/JP2009/071316 JP2009071316W WO2010079686A1 WO 2010079686 A1 WO2010079686 A1 WO 2010079686A1 JP 2009071316 W JP2009071316 W JP 2009071316W WO 2010079686 A1 WO2010079686 A1 WO 2010079686A1
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- Prior art keywords
- film
- substrate
- bolometer
- heat dissipation
- heat
- Prior art date
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- 230000003287 optical effect Effects 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 90
- 230000017525 heat dissipation Effects 0.000 claims abstract description 87
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims description 42
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
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Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
- G01J5/064—Ambient temperature sensor; Housing temperature sensor; Constructional details thereof
Definitions
- the present invention relates to a photodetector.
- a bolometer type infrared detector that detects infrared rays is known as a photodetector.
- the bolometer-type infrared detector is a photodetector that detects infrared rays using a material whose resistance value changes with temperature, and is disclosed in Patent Document 1, for example.
- Patent Document 1 discloses a bolometer-type infrared detector that includes a bolometer element that senses incident infrared light and a reference element that detects a temperature change caused by a change in use environment. This bolometer-type infrared detector detects signals by using signals output from the bolometer element and signals output from the reference element to eliminate the influence of temperature changes caused by changes in the usage environment.
- the bolometer element has a bolometer thin film supported on a silicon substrate via a cavity
- the reference element is a bolometer thin film formed on the silicon substrate via a sacrificial layer.
- the thickness of the sacrificial layer is reduced, the height of the reference element is changed, so that the difference between the height of the bolometer element and the height of the reference element is increased.
- it becomes difficult to adjust the depth of focus at the time of patterning by exposure and thus it becomes difficult to form a fine pattern, which may hinder downsizing of the infrared detector.
- an object of the present invention is to provide a photodetector that can sufficiently reduce the influence of a temperature change in a use environment and that can be downsized.
- the present invention provides a first bolometer film supported on a surface of a substrate so as to be separated from the surface of the substrate, and a first bolometer film supported on the surface of the substrate so as to be separated from the surface of the substrate.
- the second bolometer film is connected to the substrate through the substrate-side insulating film, the heat dissipation film, and the heat dissipation column. For this reason, when the second bolometer film is employed as the bolometer film of the reference element, heat generated in the second bolometer film by infrared rays is transmitted to the substrate via the substrate-side insulating film, the heat dissipation film, and the heat dissipation column. Further, since the second bolometer film and the substrate-side insulating film are formed so as to extend to the side surface of the heat dissipation film, the contact area between the second bolometer film and the substrate-side insulating film and the heat dissipation film is increased.
- the path through which heat is transferred from the second bolometer film to the heat dissipation film is widened. Therefore, since the heat generated in the second bolometer film is efficiently transmitted to the substrate, it is possible to accurately measure only the temperature change caused by the change in the use environment. As a result, it is possible to efficiently reduce the influence of temperature changes in the usage environment. Furthermore, since it is not necessary to reduce the thickness of the sacrificial layer in order to efficiently dissipate the heat of the reference element to the substrate, for example, when performing patterning by exposure, it becomes easy to control the depth of focus, and a fine pattern can be formed. As a result, the size can be reduced.
- a metal film is formed in a region facing the second bolometer film on the surface of the substrate, and the plurality of heat radiation columns are thermally connected to the substrate through the metal film.
- the thermal contact area between the heat dissipation column and the substrate is increased by interposing the metal film between the heat dissipation column and the substrate. be able to. Therefore, the heat generated in the second bolometer film by the incident infrared rays can be more efficiently transmitted to the substrate.
- a reflective film made of a metal is formed in a region facing the first bolometer film on the surface of the substrate.
- the infrared light transmitted through the first bolometer film is reflected to the first bolometer film side by the reflection film, and then transferred to the first bolometer film. It can be incident again. Therefore, the heat generated by infrared rays can be measured efficiently.
- the first bolometer film and the second bolometer film are disposed substantially parallel to the surface of the substrate and are formed at substantially the same height from the substrate. Is preferred. By adopting such a configuration, for example, when performing patterning by exposure, control of the depth of focus can be further facilitated.
- any of the above photodetectors it is preferable that a metal element is added to the amorphous silicon constituting the heat dissipation film and the plurality of heat dissipation columns. This is because the heat transfer efficiency can be increased.
- the substrate-side insulating film is preferably formed using an insulating material containing silicon.
- FIG. 2 is a partially enlarged plan view of a pixel portion of the infrared detector in FIG. 1. It is a perspective view of the bolometer element in the pixel part of the infrared detector of FIG. It is a top view of the bolometer element in the pixel part of the infrared detector of FIG. It is a top view of the reference element in the reference pixel part of the infrared detector of FIG.
- FIG. 6 is a combined sectional view taken along line VI-VI in FIGS.
- FIG. 2 is a circuit diagram of a signal processing circuit unit shown in FIG. 1. FIG.
- FIG. 2 is a circuit diagram of a signal processing circuit unit shown in FIG. 1.
- A it is a sectional view showing a (b), (c) the substrate thermal oxidation process of the reference element shown in FIG. 6, respectively, the first electrode forming step and SiO 2 laminating step.
- D is a sectional view showing the subsequent process of FIG. 9 and the subsequent processes in order.
- G is sectional views showing the subsequent process of FIG. 10 and subsequent processes in order.
- J are sectional views showing the subsequent process of FIG. 11 and subsequent processes in order.
- M (n), (o) are sectional views showing the subsequent process of FIG. 12 and subsequent processes in order.
- (P), (q) is sectional drawing which shows the subsequent process of FIG. 13 and shows the subsequent process in order. It is a schematic diagram explaining the effect of the thermal radiation pillar shown in FIG. It is a modification of the infrared detector shown in FIG. It is a modification of the infrared detector shown in FIG. It is a modification of the infrared detector shown in FIG. It is sectional drawing which expands and shows the principal part of the reference element shown in FIG.
- a photodetector is a so-called bolometer-type infrared detector that detects infrared rays using a material whose resistance value changes with temperature, and is suitably used for an infrared imager, a thermography, and the like.
- FIG. 1 is a plan view of an infrared detector according to an embodiment of the present invention
- FIG. 2 is a plan view in which a part of a pixel portion of the infrared detector of FIG. 1 is enlarged
- FIG. 3 is an infrared detector of FIG. It is a perspective view which shows the structure of 1 pixel.
- FIG. 4 is a plan view showing the configuration of one pixel in the pixel portion of the infrared detector in FIG. 1
- FIG. 5 is a plan view showing the configuration of one pixel in the reference pixel portion of the infrared detector in FIG. 1
- FIG. 6 is a schematic cross-sectional view of an infrared detector in which a cross section taken along line VI-VI in FIG. 4 and a cross section taken along line VI-VI in FIG. 5 are combined.
- the infrared detector 1 is a detector that detects infrared rays by thermal change, and includes a substrate 10, a pixel unit 12, a reference pixel unit 13, and a signal processing circuit unit formed on the substrate 10. 14.
- the substrate 10 is, for example, a Si (silicon) substrate, and is a flat plate member having a certain width, depth, and thickness.
- a thermal oxide layer or an underlayer may be formed on the surface of the Si substrate. In this embodiment, when these layers are formed on the Si substrate, the substrate including these layers is also used. 10 is set.
- the pixel unit 12 functions as an infrared receiver, and is electrically connected to the signal processing circuit unit 14. Further, as shown in FIG. 2, the pixel unit 12 has a two-dimensional array structure in which a plurality of pixels (bolometer elements 11) are arranged in a two-dimensional pattern in a vertical and horizontal order on a substrate 10, and is a so-called surface micromachine. .
- the bolometer element 11 which comprises each pixel is formed in the rectangular pixel area 10b in the surface 10a of the board
- the bolometer element 11 includes ROIC (Readout Integrated Circuit) pads 16 and 17, electrode plugs 18 and 19, and a bolometer thin film (first bolometer film) 15.
- ROIC Readout Integrated Circuit
- ROIC pads 16 and 17 are conductive rectangular pads.
- the ROIC pads 16 and 17 are disposed at positions (diagonal positions) facing each other across the center of the pixel region 10b on the diagonal line, and both are electrically connected to the signal processing circuit unit 14 (not shown in FIGS. 3 and 4). It is connected.
- the electrode plugs 18 and 19 are formed on the ROIC pads 16 and 17.
- the electrode plugs 18 and 19 are substantially columnar members standing in a direction intersecting the surface 10 a, and a portion slightly above the middle in the height direction is connected to the bolometer thin film 15.
- the electrode plugs 18 and 19 are made of a conductive material, and for example, Al (aluminum) is used.
- the bolometer thin film 15 is a substantially rectangular thin film, and is disposed substantially parallel to the substrate 10 and spaced from the surface 10a.
- the central portion of the bolometer thin film 15 is a light receiving portion 15 a that receives infrared rays, and two corner portions 15 b and 15 c arranged at diagonal positions are connected to electrode plugs 18 and 19.
- the bolometer thin film 15 is formed with crank-shaped slits 15f and 15g so as to leave corners 15b and 15c from two opposed peripheral portions 15d and 15e constituting the light receiving portion 15a.
- the portions connected to the corner portions 15b and 15c outside the slits 15f and 15g are beam portions 15h and 15i.
- the beam portions 15h and 15i are formed to extend along the outer periphery of the light receiving portion 15a with the corner portions 15b and 15c as starting points, and are opposed to each other. Since the light receiving portion 15a and the beam portions 15h and 15i are spatially separated by the slits 15f and 15g, the light receiving portion 15a and the beam portions 15h and 15i are thermally separated.
- the bolometer thin film 15 is made of a material having a large resistivity change due to a temperature change, for example, amorphous silicon.
- wirings 15j and 15k are formed on the beam portions 15h and 15i (not shown in FIG. 3).
- the wirings 15j and 15k have one end side electrically connected to the electrode plugs 18 and 19, respectively, and the other end side electrically connected to the light receiving portion 15a. Accordingly, the wirings 15j and 15k are electrically connected to the signal processing circuit unit 14 via the electrode plugs 18 and 19 and the ROIC pads 16 and 17.
- the bolometer thin film 15 is supported on the substrate 10 with only the corner portions 15b and 15c being connected to the electrode plugs 18 and 19, and the other portions being separated from the surface 10a. Thereby, as shown in FIG. 6, a gap 11 a is formed between the bolometer thin film 15 and the substrate 10.
- the bolometer thin film 15 has an insulating film 30 formed on the surface 15m on the substrate 10 side.
- a silicon oxide film (silicon oxide) formed by a plasma CVD (Chemical Vapor Deposition) method using TEOS (Tetraethyl orthosilicate) as a raw material is used as the insulating film 30 (or silicon nitride may be used).
- a reflective film 20 made of metal is laminated in a region facing the bolometer thin film 15 on the surface 10a.
- the reflective film 20 is made of a metal having a high reflectance with respect to infrared rays.
- the bolometer element 11 has a membrane configuration in which the bolometer thin film 15 is spaced apart from the surface 10 a of the substrate 10 and is arranged substantially parallel to the substrate 10. Further, the bolometer thin film 15 and the substrate 10 are spatially separated by a gap 11a and thermally separated. Then, the resistivity change due to the temperature change of the light receiving portion 15a of the bolometer thin film 15 can be read by the signal processing circuit portion 14 via the wirings 15j and 15k, the electrode plugs 18 and 19 and the ROIC pads 16 and 17. ing.
- the reference pixel unit 13 has a two-dimensional array structure in which a plurality of pixels (reference elements 21) are arranged on the substrate 10 in a two-dimensional shape with regular vertical and horizontal dimensions. Each pixel is so-called optical black.
- the reference element 21 constituting each pixel has substantially the same configuration as the bolometer element 11 as shown in FIGS.
- the reference element 21 is different from the bolometer element 11 in that it includes a bolometer thin film (second bolometer film) 22, a heat dissipation film 23, a heat dissipation metal film 24, a plurality of heat dissipation columns 25, and a substrate-side insulating film 31. ing.
- the reference element 21 has ROIC pads 26 and 27 and electrode plugs 28 and 29 (not shown in FIG. 5), these are the same as the bolometer element 11, and thus detailed description thereof is omitted.
- the bolometer thin film (second bolometer film) 22 is substantially parallel to the surface 10a of the substrate 10 and is disposed so as to form a substantially same plane as the bolometer thin film 15.
- forming substantially the same plane means that the difference in height from the surface 10a of the bolometer thin film 22 and the bolometer thin film 15 is within the range of the thickness of the heat dissipation film 23 described later.
- the plane including 22 and the plane including the bolometer thin film 15 are within, for example, about ⁇ 1 ⁇ m when viewed from the surface 10a, and the bolometer thin film 22 and the bolometer thin film 15 are formed at substantially the same height from the substrate 10. It means that
- the bolometer thin film 22 is a substantially rectangular thin film similar to the bolometer thin film 15, and includes a light receiving portion 22a, corner portions 22b and 22c, peripheral portions 22d and 22e, slits 22f and 22g, and a beam portion 22h. , 22i and wirings 22j, 22k, and a wraparound portion 22s described later.
- a substrate-side insulating film 31 is formed on the surface of the light receiving portion 22a on the substrate 10 side, and a heat dissipation film 23 is formed via the substrate-side insulating film 31.
- the substrate-side insulating film 31 is made of the same material as that of the insulating film 30 of the bolometer element 11.
- the substrate-side insulating film 31 is a side surface intersecting the surface 10a of the substrate 10 in the heat dissipation film 23, that is, a side surface 23a intersecting the surface 23b on the substrate 10 side of the heat dissipation film 23 as shown in detail in FIG.
- the side surface 23a is directly covered. Further, a wraparound portion 22s of the bolometer thin film 22 is formed on the side surface 23a. Therefore, the bolometer thin film 22 and the substrate-side insulating film 31 are formed to wrap around the side surface 23a of the heat dissipation film 23 and cover the side surface 23a.
- the heat dissipating film 23 has a wide crank shape obtained by removing corner portions at two diagonal positions from a rectangle along the slits 22f and 22g.
- the heat dissipation film 23 is made of amorphous silicon ( ⁇ -Si).
- Each heat radiation column 25 has an upper end surface connected to the heat dissipation film 23 and a lower end surface connected to the heat dissipation metal film 24 to thermally connect the heat dissipation film 23 and the heat dissipation metal film 24.
- Each heat radiation column 25 is made of amorphous silicon and is formed in a substantially columnar shape extending in the direction intersecting the surface 10a. Further, the heat radiation columns 25 are arranged at equal intervals in the vertical and horizontal directions so as to be accommodated in the heat radiation film 23.
- the film thickness of the heat dissipation film 23 is W23, W23 is larger than the film thickness W22 of the bolometer thin film 22 and the film thickness W31 of the substrate side insulating film 31 (W23> W22, W23> W31).
- the heat radiation column 25 and the heat radiation film 23 may be integrally formed.
- the heat radiating metal film 24 is formed in a region facing the light receiving portion 22a of the substrate 10a.
- the heat dissipation metal film 24 has an area larger than the total area of the cross-sectional areas of the plurality of heat dissipation columns 25 and is thermally connected to the heat dissipation columns 25 and the substrate 10.
- the heat dissipation metal film 24 for example, Al, Cu, W, or the like is used.
- the reference element 21 can be dissipated by transferring heat generated by a temperature change accompanying the incidence of infrared rays to the substrate 10.
- the resistivity change due to the temperature change such as the environmental change of the bolometer thin film 22 can be read by the signal processing circuit unit 14 through the wirings 22j and 22k, the electrode plugs 28 and 29, and the ROIC pads 26 and 27. ing.
- the signal processing circuit unit 14 shown in FIG. 1 is a circuit for reading, reads out the output signals of the pixel unit 12 and the reference pixel unit 13, and outputs the output signal of the reference pixel unit 13 from the output signal of the pixel unit 12. It has a function to subtract.
- the readout circuit will be specifically described with reference to FIGS. 7 and 8 are diagrams illustrating the circuit configuration of the readout circuit of the signal processing circuit unit 14.
- description will be made by taking as an example an infrared detector having a minimum configuration including one bolometer element 11 and one reference element 21. In the case of this minimum configuration, the output voltage Vout is measured using, for example, an integration circuit shown in FIG.
- This output voltage Vout is obtained by subtracting the reference resistance current I (Rref) flowing in the light receiving portion 22a of the reference element 21 from the bolometer current I (Rb) flowing in the light receiving portion 15a of the bolometer element 11, Ip,
- the integration capacity is Cf, it is expressed by the following formula (1).
- Vout ⁇ Vinp ⁇ Ip ⁇ t / Cf (1)
- the signal processing circuit unit 14 converts the change in the resistance value into the change in the output voltage Vout using the equation (1), and infrared detection is performed based on this electric signal.
- infrared detection is performed based on this electric signal.
- the infrared detector 1 having the above configuration will be described.
- the infrared rays are incident on the infrared detector 1, the infrared rays are absorbed by the light receiving unit 15 a of the bolometer element 11.
- the light receiving unit 15a generates heat according to the absorbed infrared rays. Since the light receiving portion 15a is thermally separated from surrounding members such as the substrate 10 by the gap 11a, the heat generated in the light receiving portion 15a increases the temperature of the light receiving portion 15a without being dissipated to the surroundings. As the temperature rises, the resistance value of the light receiving portion 15a changes. This change in resistance value is sent as a signal to the signal processing circuit unit 14 via the wirings 15j and 15k, the electrode plugs 18 and 19 and the ROIC pads 16 and 17 electrically connected to the light receiving unit 15a.
- the infrared detector 1 can absorb infrared rays efficiently.
- the infrared ray is incident on the infrared detector 1, the infrared ray is incident on the reference element 21 similarly to the bolometer element 11. Then, the infrared rays are absorbed by the light receiving portion 22a of the reference element 21. The light receiver 22a generates heat according to the absorbed infrared rays.
- the light receiving unit 22 a is thermally connected to the heat dissipation film 23, the heat dissipation column 25, the heat dissipation metal film 24, and the substrate 10 through the substrate-side insulating film 31.
- the heat generated in the light receiving portion 22 a due to the incidence of infrared rays is transmitted in the order of the substrate-side insulating film 31, the heat dissipation film 23, the heat dissipation column 25, and the heat dissipation metal film 24 to the substrate 10. Since the infrared detector 1 releases the heat generated in the light receiving unit 22a in this way, only the heat generated by the temperature change accompanying the environmental change of the infrared detector 1 changes the resistance value of the light receiving unit 22a. become.
- Such a change in the resistance value due to the environmental change is sent to the signal processing circuit unit 14 as a signal through the wirings 22j and 22k, the electrode plugs 28 and 29, and the ROIC pads 26 and 27 electrically connected to the light receiving unit 22a. Sent.
- the bolometer thin film 22 is connected to the substrate 10 via the substrate-side insulating film 31, the heat dissipation film 23, and the heat dissipation column 25. For this reason, efficient heat dissipation is performed in which the heat of the light receiving portion 22 a generated by infrared rays is transmitted to the substrate 10 through the substrate-side insulating film 31, the heat dissipation film 23, the plurality of heat dissipation columns 25, and the heat dissipation metal film 24. Therefore, it is possible to accurately measure only a temperature change caused by a change in use environment.
- the bolometer thin film 22 and the substrate-side insulating film 31 are formed so as to wrap around the side surface 23a of the heat dissipation film 23 and are also in contact with the side surface 23a. Therefore, the contact area to the heat dissipation film 23 is expanded as compared with the case where only the planar portion along the substrate 10 is in contact. Therefore, a path through which heat is transmitted from the bolometer thin film 22 to the heat dissipation film 23 is widened, and heat generated in the light receiving portion 22a is further efficiently transmitted to the heat dissipation film 23. Therefore, heat dissipation is performed extremely efficiently.
- the infrared detector 1 it is possible to more efficiently reduce the influence of the temperature change in the usage environment. Further, since the bolometer thin film 22 and the substrate-side insulating film 31 are formed so as to wrap around the side surface 23a of the heat dissipation film 23, the bolometer thin film 22, the substrate-side insulating film 31 and the heat dissipation film 23 are difficult to peel off. Thus, insulation between the bolometer thin film 22 and the heat dissipation film 23 is reliably performed.
- the heat radiating metal film 24 is interposed between the heat radiating column 25 and the substrate 10, the thermal contact area between the heat radiating column 25 and the substrate 10 is increased. Therefore, the heat generated in the bolometer thin film 22 by the incident infrared rays is more efficiently transmitted to the substrate 10, and more efficient heat dissipation is performed.
- the light receiving portion 22a and the substrate 10 are thermally connected by a plurality of heat radiation columns 25 having a columnar body structure.
- the bolometer thin film 15 has a larger thermal expansion coefficient difference between the light receiving unit 22a and the heat radiating column 25 or between the substrate 10 and the heat radiating column 25 than when the light receiving unit 22a and the substrate 10 are configured as a single unit. It is possible to prevent stress from being applied. Therefore, it is possible to prevent the bolometer thin film 15 from being cracked.
- the reference element 21 is similar in shape to the bolometer element 11, the difference in resistance due to the difference in shape between the two elements can be reduced. Therefore, the reference element 21 can be suitably employed as a reference element.
- the heat dissipation film 23 and the heat dissipation column 25 are made of amorphous silicon, both are preferably doped (doped) with a metal element. This is because when a metal element is added, heat transfer efficiency is improved and heat dissipation characteristics are improved.
- FIG. 9 to 14 are cross-sectional views showing structures during the manufacture of the reference element 21 in the infrared detector 1 shown in FIG.
- a substrate thermal oxidation process is performed.
- the surface of the Si substrate 100 is oxidized to form a thermal oxide film 101 on the Si substrate 100.
- the thickness of the thermal oxide film 101 is, for example, 0.7 ⁇ m.
- a first electrode forming step is performed.
- the ROIC pads 26 and 27 and the electrode pad 33 of the reference element 21 are formed on the thermal oxide film 101.
- Al—Si—Ti is laminated to a thickness of about 1 ⁇ m, a mask (not shown) using a photoresist is formed, and then etching is performed to remove unnecessary portions, thereby removing ROIC pads 26 and 27 and electrode pads 33.
- a dry etching method is preferable, but a wet etching method may be used.
- a SiO 2 lamination step is performed.
- the SiO 2 film 102 is laminated on the thermal oxide film 101, the ROIC pads 26 and 27 and the electrode pad 33.
- the SiO 2 film 102 is laminated with a thickness of about 1 ⁇ m by plasma CVD.
- the Si substrate 100, the thermal oxide film 101, and the SiO 2 film 102 are used as the substrate 10.
- an opening forming step is performed.
- openings 102a, 102b, and 102c are formed in the SiO 2 film 102 located above the ROIC pads 26 and 27 and the electrode pad 33, respectively.
- etching is performed to remove unnecessary portions of the SiO 2 film 102 to form openings 102a, 102b, and 102c.
- a second electrode formation step is performed.
- a metal layer made of the same material as that of the ROIC pads 26 and 27 and the electrode pad 33 is formed, and after forming a mask using a photoresist, etching is performed to remove unnecessary portions, whereby the ROIC pad 26 is removed. 27, the electrode pad 33 and the metal film 24 for heat dissipation are formed.
- the ROIC pads 26 and 27 and the electrode pad 33 formed in the first electrode formation step are integrated with the ROIC pads 26 and 27 and the electrode pad 33 formed in the second electrode formation step, respectively.
- the upper surfaces of the pads 26 and 27 and the electrode pad 33 are positioned above the SiO 2 film 102 through the openings 102a, 102b and 102c.
- the upper surfaces of the ROIC pads 26 and 27, the electrode pad 33, and the heat radiating metal film 24 are positioned on the same plane. As described above, the upper surface of the ROIC pads 26 and 27, the electrode pad 33, and the heat dissipation metal film 24 is positioned on the same plane, so that the membrane structure of the reference element 21 is flattened.
- a sacrificial layer forming step is performed as shown in FIG.
- the sacrificial layer 36 is formed by applying, for example, polyimide so that the film thickness becomes, for example, about 2.5 ⁇ m.
- a dummy pixel creation step is performed.
- the protective layer 34 is laminated on the surface of the laminate.
- the protective layer 34 is formed on the surface of the stacked body by stacking amorphous silicon.
- the protective layer 34 may be formed by stacking TEOS-SiO 2 (SiO 2 film formed by a plasma CVD apparatus using TEOS).
- the protective layer 34 is laminated with a thickness of about 50 nm, for example.
- the openings 36a are formed to have an inner diameter as small as possible.
- the inner diameter is about 2 ⁇ m
- the pitch between the openings 36a is 2 to 5 ⁇ m.
- the protective layer 34 is removed.
- amorphous silicon is used as the protective layer 34
- XeF 2 is used.
- TEOS-SiO 2 is used as the protective layer 34
- HF is used.
- a step of forming a heat dissipation column is performed.
- an amorphous silicon film 35 that later becomes the heat dissipation pillar 25 and the heat dissipation film 23 is formed on the entire upper surface of the sacrificial layer 36 including the inside of the opening 36a formed by the dummy pixel forming step.
- the amorphous silicon film 35 is formed by laminating amorphous silicon with a thickness of about 1 ⁇ m, for example, by sputtering.
- the heat radiation column 25 is formed inside the opening 36a.
- the heat radiation column 25 has, for example, an outer diameter of 2 ⁇ m and a pitch of 2 to 5 ⁇ m.
- the inner diameter of the opening 36a is made as small as possible. Therefore, for example, as shown in FIG. 15A, compared to the case where the outer diameter of the heat radiating column 25 (that is, the inner diameter of the opening 36a) is large, as shown in FIG.
- the surface 35a of the connected amorphous silicon film 35 can be flattened. This eliminates the need for a separate flattening step (etchback step) to flatten the membrane structure after the heat-dissipating column forming step, thereby reducing manufacturing costs and shortening manufacturing time. be able to. Further, by forming the heat dissipation column 25 with a small outer diameter, a small amount of amorphous silicon can be used, so that the material cost can be reduced.
- a heat radiation film forming step is performed.
- the amorphous silicon film 35 is etched to form the heat dissipation film 23 on the upper side of the heat dissipation column 25.
- the heat radiation column 25 and the heat radiation film 23 are integrally formed, it is possible to disperse the stress generated by the difference in thermal expansion coefficient between the substrate 10 and the heat radiation column 25. As a result, it is possible to prevent the bolometer thin film 15 from being cracked.
- an insulating film stacking step is performed.
- the substrate-side insulating film 31 is formed by laminating, for example, TEOS-SiO 2 with a thickness of about 100 nm on the entire surface of the multilayer body.
- a bolometer thin film is laminated.
- the bolometer thin film 22 is formed by laminating amorphous silicon, for example, with a thickness of about 100 nm on the entire surface of the laminate.
- the substrate-side insulating film 31 is formed so as to be in direct contact with the upper surface of the heat radiating film 23 and the side surface intersecting the upper surface.
- the bolometer thin film 22 is formed on the upper surface of 23 and the side surface intersecting with the upper surface through the substrate-side insulating film 31.
- an electrode metal film laminating step is performed.
- the electrode metal film 38 is laminated on the entire surface of the laminate.
- the electrode metal film 38 is formed by laminating WSi or Ti with a thickness of about 50 nm.
- the electrode metal film 38 may be laminated with a thickness of about 100 nm.
- an upper electrode forming step is performed.
- a resist pattern (not shown) using a photoresist is formed, and unnecessary portions of the electrode metal film 38 are removed to form the upper electrode 38a.
- an opening forming step is performed.
- openings 39 and 40 are formed in the upper layers of the ROIC pads 26 and 27, respectively, and openings 41 and 42 are formed in the layer on the substrate 10 located between the heat dissipation metal film 24 and the ROIC pads 26 and 27. Respectively.
- an electrode plug forming step is performed.
- a metal film is laminated by sputtering or vacuum deposition, and then electrode plugs 28 and 29 are formed in the openings 39 and 40 by lift-off, respectively.
- the electrode plugs 28 and 29 are formed using Al.
- the upper electrode 38a and the electrode plugs 28 and 29 are integrated respectively.
- a lower electrode forming step is performed.
- an electrode metal film for example, using Ti, Pt, Au, Sn, etc.
- a resist pattern (not shown) using a photoresist is formed.
- lift-off is performed to form the lower electrode 32.
- the lower electrode 32 includes, for example, wiring that connects the ROIC pads 26 and 27 and the signal processing circuit 14.
- a sacrificial layer removal step is performed.
- the sacrificial layer 36 made of polyimide, for example, is ashed with O 2 . In this way, by completely removing the sacrificial layer 36, it is possible to prevent unnecessary gas from being generated from the sacrificial layer 36 due to heat treatment or the like in the process.
- the reference element 21 that can suitably dissipate heat due to infrared absorption to the substrate 10 can be manufactured.
- the steps shown in FIGS. 11 and 12 such as the dummy pixel creation step, the heat radiation column formation step, and the heat radiation film formation step are not necessary.
- the bolometer element 11 and the reference element 21 can be simultaneously manufactured on the same substrate 10.
- the bolometer thin film 15 and the bolometer thin film 22 are substantially parallel to the surface of the substrate 10 and are located on substantially the same plane, the depth of focus can be easily controlled during patterning by exposure.
- the infrared detector 1 can be downsized.
- the uniformity of resistivity in the pixel portion 12 and the reference pixel portion 13 is also improved, so that the function as a reference element can be improved.
- the signal processing circuit unit 14 manufactured independently is connected to the pixel unit 12 composed of the bolometer element 11 and the reference pixel unit 13 composed of the reference element 21, whereby the infrared detector 1 is completed.
- embodiment mentioned above shows an example of the infrared detector which concerns on this invention.
- the infrared detector according to the present invention is not limited to the infrared detector according to the embodiment, and the infrared detector according to the embodiment may be modified or applied to others.
- the infrared detector 1 including the reference element 21 having the heat radiating metal film 24 has been described.
- the reference element 21 does not have the heat radiating metal film 24. Also good.
- heat generated by infrared rays in the light receiving portion 22 a is conducted in the order of the substrate-side insulating film 31, the heat dissipation film 23, and the heat dissipation column 25, and is transmitted to the substrate 10.
- the reference element 21 can accurately detect a temperature change due to an environmental change or the like, and can efficiently reduce the influence of the temperature change in the use environment, and can be downsized. It becomes possible.
- the infrared detector 1 including the bolometer element 11 having the reflective film 20 has been described.
- the reflective film 20 may not be formed on the bolometer element 11.
- heat generated by infrared rays in the light receiving portion 22 a of the reference element 21 is conducted in the order of the substrate-side insulating film 31, the heat dissipation film 23, the heat dissipation column 25, and the heat dissipation metal film 24, and is transmitted to the substrate 10.
- the reference element 21 can accurately detect a temperature change due to an environmental change or the like, and can efficiently reduce the influence of the temperature change in the use environment, and can be downsized. It becomes possible.
- the heat dissipation metal film 24 is not provided, and the bolometer element 11 may not have the reflective film 20.
- heat generated by infrared rays in the light receiving portion 22 a of the reference element 21 is conducted in the order of the substrate-side insulating film 31, the heat dissipation film 23, and the heat dissipation column 25 and is radiated to the substrate 10.
- the reference element 21 can accurately detect a temperature change due to an environmental change or the like, and can efficiently reduce the influence of the temperature change in the use environment, and can be downsized. It becomes possible.
- the said embodiment demonstrated the case where the thermal radiation column 25 was formed in the substantially cylindrical shape, the column shape from which the cross section of the thermal radiation column 25 becomes a rectangle or a triangle may be sufficient. Even in such a case, the influence of the temperature change in the use environment can be efficiently reduced, and the size can be reduced.
- the present invention it is possible to reduce the size of the photodetector while efficiently reducing the influence of temperature changes in the usage environment.
- SYMBOLS 1 Infrared detector (light detector), 10 ... Board
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Abstract
Description
Vout-Vinp=-Ip・t/Cf …(1)
の変化は、受光部22aと電気的に接続された配線22j,22k、電極プラグ28,29及びROICパッド26,27を介して信号として信号処理回路部14へ送られる。
Claims (6)
- 基板の表面上に該基板の表面から離間して支持された第1のボロメータ膜と、
前記基板の表面から離間して前記基板の表面上に支持された第2のボロメータ膜と、
前記第2のボロメータ膜の前記基板側表面に形成された基板側絶縁膜と、
該基板側絶縁膜を介して前記第2のボロメータ膜の前記基板側表面に形成されたアモルファスシリコンからなる放熱膜と、
前記放熱膜と前記基板とに熱的に接続されたアモルファスシリコンからなる複数の放熱柱とを有し、
前記第2のボロメータ膜および前記基板側絶縁膜は、前記放熱膜における前記基板の表面と交差する側面にまで回り込んで形成されていることを特徴とする光検出器。 - 前記基板の表面における前記第2のボロメータ膜と対向する領域に金属膜が形成され、
前記複数の放熱柱は、前記金属膜を介して前記基板と熱的に接続されていることを特徴とする請求項1記載の光検出器。 - 前記基板の表面における前記第1のボロメータ膜と対向する領域に金属からなる反射膜が形成されていることを特徴とする請求項1記載の光検出器。
- 前記第1のボロメータ膜及び前記第2のボロメータ膜は、前記基板の表面と略平行に配置され、かつ前記基板からの高さが略同じ位置に形成されていることを特徴とする請求項1記載の光検出器。
- 前記放熱膜および前記複数の放熱柱を構成する前記アモルファスシリコンに金属元素が添加されていることを特徴とする請求項1記載の光検出器。
- 前記基板側絶縁膜は、シリコンを含む絶縁性材料を用いて形成されていることを特徴とする請求項1記載の光検出器。
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EP09837571.0A EP2375228B1 (en) | 2009-01-06 | 2009-12-22 | Optical sensor |
CN200980154028.8A CN102272563B (zh) | 2009-01-06 | 2009-12-22 | 光检测器 |
US13/139,599 US8350350B2 (en) | 2009-01-06 | 2009-12-22 | Optical sensor |
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JP2009-000926 | 2009-01-06 | ||
JP2009000926A JP5259430B2 (ja) | 2009-01-06 | 2009-01-06 | 光検出器 |
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WO2010079686A1 true WO2010079686A1 (ja) | 2010-07-15 |
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US (1) | US8350350B2 (ja) |
EP (1) | EP2375228B1 (ja) |
JP (1) | JP5259430B2 (ja) |
KR (1) | KR101624762B1 (ja) |
CN (1) | CN102272563B (ja) |
TW (1) | TWI443317B (ja) |
WO (1) | WO2010079686A1 (ja) |
Cited By (2)
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WO2008146719A1 (ja) | 2007-05-23 | 2008-12-04 | Teijin Limited | ポリカ-ボネ-ト樹脂組成物 |
WO2019031234A1 (ja) * | 2017-08-10 | 2019-02-14 | 浜松ホトニクス株式会社 | 光検出器 |
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JP5708122B2 (ja) * | 2011-03-25 | 2015-04-30 | 日本電気株式会社 | 熱型赤外線固体撮像素子及びその製造方法 |
DE202012103703U1 (de) * | 2011-10-03 | 2012-10-08 | Koninklijke Philips Electronics N.V. | Bolometer |
US20150380627A1 (en) * | 2014-06-27 | 2015-12-31 | Qualcomm Technologies, Inc. | Lid assembly for thermopile temperature sensing device in thermal gradient environment |
KR102318266B1 (ko) * | 2014-07-23 | 2021-10-27 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
CN111033192A (zh) * | 2017-08-10 | 2020-04-17 | 浜松光子学株式会社 | 光检测器 |
JP7142470B2 (ja) * | 2018-06-07 | 2022-09-27 | 浜松ホトニクス株式会社 | 光検出器 |
JP7142471B2 (ja) * | 2018-06-07 | 2022-09-27 | 浜松ホトニクス株式会社 | 光検出器 |
CN113015889B (zh) * | 2019-02-28 | 2024-04-02 | 松下知识产权经营株式会社 | 红外线传感器、红外线传感器阵列及红外线传感器的制造方法 |
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Also Published As
Publication number | Publication date |
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EP2375228A4 (en) | 2017-12-13 |
CN102272563B (zh) | 2014-08-06 |
US8350350B2 (en) | 2013-01-08 |
TWI443317B (zh) | 2014-07-01 |
EP2375228A1 (en) | 2011-10-12 |
US20110241154A1 (en) | 2011-10-06 |
JP2010161113A (ja) | 2010-07-22 |
EP2375228B1 (en) | 2019-04-10 |
CN102272563A (zh) | 2011-12-07 |
KR101624762B1 (ko) | 2016-05-26 |
JP5259430B2 (ja) | 2013-08-07 |
TW201111758A (en) | 2011-04-01 |
KR20110101128A (ko) | 2011-09-15 |
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