WO2010074283A1 - パッシベーション膜形成用成膜装置及び成膜方法、並びに太陽電池素子の製造方法 - Google Patents
パッシベーション膜形成用成膜装置及び成膜方法、並びに太陽電池素子の製造方法 Download PDFInfo
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- WO2010074283A1 WO2010074283A1 PCT/JP2009/071767 JP2009071767W WO2010074283A1 WO 2010074283 A1 WO2010074283 A1 WO 2010074283A1 JP 2009071767 W JP2009071767 W JP 2009071767W WO 2010074283 A1 WO2010074283 A1 WO 2010074283A1
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- film
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- 238000002161 passivation Methods 0.000 title claims abstract description 88
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000007789 gas Substances 0.000 claims description 43
- 230000015572 biosynthetic process Effects 0.000 claims description 38
- 238000009792 diffusion process Methods 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 230000006798 recombination Effects 0.000 description 15
- 238000005215 recombination Methods 0.000 description 15
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 235000008733 Citrus aurantifolia Nutrition 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 235000011941 Tilia x europaea Nutrition 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000004571 lime Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum ions Chemical class 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
2 成膜装置
3 成膜装置
11 p型半導体基板
12 n型拡散層
13 パッシベーション層
14 グリッド電極
15 BSF層
16 裏面電極層
16a 第一裏面電極層
16b 第二裏面電極層
21 真空室
22 載置台
23 シャワープレート
24 ガス導入手段
24a、24b、24c ガス源
24d ガス導入管
24e バルブ
24 ガス導入手段
25 高周波電源
26 低周波電源
S 成膜対象
Claims (8)
- 成膜対象を載置する載置部と、高周波電源と、前記載置部に載置された成膜対象に対向するように設けられ、成膜ガスを導入すると共に前記高周波電源が接続され高周波数の電圧が印加されるシャワープレートとを備え、
前記シャワープレート又は前記載置部に、低周波数の電圧を印加する低周波電源が接続されたことを特徴とするパッシベーション膜形成用成膜装置。 - 前記低周波電源が前記シャワープレートに接続されていることを特徴とする請求項1記載のパッシベーション膜形成用成膜装置。
- シリコンと、窒素及び酸素から選ばれた少なくとも1種とを含む成膜ガスを導入し、この成膜ガスを導入するシャワープレートを放電電極として高周波電源から高周波数の電圧を印加してプラズマを発生させて成膜対象にパッシベーション膜を成膜する成膜方法において、
成膜時に、さらに低周波電源から低周波数の電圧をシャワープレート又は成膜対象に印加しながら、成膜対象にパッシベーション膜を成膜することを特徴とする成膜方法。 - 前記低周波電源は、前記低周波数の電圧を前記シャワープレートに印加しながら、成膜対象にパッシベーション膜を成膜することを特徴とする請求項3に記載の成膜方法。
- 前記低周波電源の設定周波数は、20~400kHzであり、前記高周波電源の設定周波数は、13.56~27.12MHzであることを特徴とする請求項3又は4記載の成膜方法。
- 前記低周波電源の投入電力は、前記高周波電源の投入電力の14~37%であることを特徴とする請求項3~5のいずれか一項に記載の成膜方法。
- 前記成膜対象が、拡散層が設けられた太陽電池素子であり、該拡散層上に前記パッシベーション膜を成膜することを特徴とする請求項3~6のいずれか一項に記載の成膜方法。
- 半導体基板の一方面に拡散層を形成する拡散層形成工程と、
前記拡散層上にパッシベーション膜を形成するパッシベーション膜形成工程と、
前記パッシベーション膜上にグリッド電極を形成し、その後、さらに半導体基板の他方面に裏面電極を形成し、加熱することで前記グリッド電極を前記拡散層に接続させる電極形成工程とを含み、
前記パッシベーション膜形成工程は、
シリコンと、窒素及び酸素から選ばれた少なくとも1種とを含む成膜ガスを導入し、この成膜ガスを導入するシャワープレートを放電電極として高周波電源から高周波数の電圧を印加すると共に、低周波電源から低周波数の電圧を前記シャワープレート又は前記拡散層が形成された半導体基板に印加しプラズマを発生させて、前記拡散層上に前記パッシベーション膜を形成することを特徴とする太陽電池素子の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200980152288.1A CN102265407B (zh) | 2008-12-26 | 2009-12-28 | 钝化膜的成膜方法、以及太阳能电池元件的制造方法 |
EP09835076.2A EP2381483B1 (en) | 2008-12-26 | 2009-12-28 | Film-forming method |
JP2010544193A JP5520834B2 (ja) | 2008-12-26 | 2009-12-28 | パッシベーション膜の成膜方法、及び太陽電池素子の製造方法 |
US13/142,138 US8735201B2 (en) | 2008-12-26 | 2009-12-28 | Film-forming method for forming passivation film and manufacturing method for solar cell element |
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JP2008335051 | 2008-12-26 | ||
JP2008-335051 | 2008-12-26 |
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WO2010074283A1 true WO2010074283A1 (ja) | 2010-07-01 |
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PCT/JP2009/071767 WO2010074283A1 (ja) | 2008-12-26 | 2009-12-28 | パッシベーション膜形成用成膜装置及び成膜方法、並びに太陽電池素子の製造方法 |
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US (1) | US8735201B2 (ja) |
EP (1) | EP2381483B1 (ja) |
JP (1) | JP5520834B2 (ja) |
KR (1) | KR20110101223A (ja) |
CN (1) | CN102265407B (ja) |
MY (1) | MY155992A (ja) |
TW (1) | TWI463687B (ja) |
WO (1) | WO2010074283A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012039099A1 (ja) * | 2010-09-22 | 2012-03-29 | 株式会社神戸製鋼所 | μ-PCD法を用いた薄膜半導体の結晶性評価装置 |
JP2013195096A (ja) * | 2012-03-16 | 2013-09-30 | Kobe Steel Ltd | 半導体結晶性評価装置および該方法 |
JP2016508286A (ja) * | 2012-12-06 | 2016-03-17 | サンパワー コーポレイション | 太陽電池導電性コンタクトのシード層 |
JP2019517142A (ja) * | 2016-05-17 | 2019-06-20 | アメリカ合衆国 | AlGaN/GaN高電子移動度トランジスタのダメージフリープラズマCVDパッシベーション |
Families Citing this family (2)
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CN104103717A (zh) * | 2014-06-30 | 2014-10-15 | 浙江晶科能源有限公司 | 一种新型太阳能电池减反射膜的制备方法 |
CN108322991A (zh) * | 2018-01-08 | 2018-07-24 | 青海师范大学 | 一种半封闭常压双频大面积辉光放电实验装置 |
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- 2009-12-28 MY MYPI2011002981A patent/MY155992A/en unknown
- 2009-12-28 CN CN200980152288.1A patent/CN102265407B/zh active Active
- 2009-12-28 KR KR1020117017408A patent/KR20110101223A/ko not_active Application Discontinuation
- 2009-12-28 EP EP09835076.2A patent/EP2381483B1/en active Active
- 2009-12-28 US US13/142,138 patent/US8735201B2/en active Active
- 2009-12-28 TW TW098145307A patent/TWI463687B/zh active
- 2009-12-28 WO PCT/JP2009/071767 patent/WO2010074283A1/ja active Application Filing
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JPS5930130A (ja) * | 1982-08-10 | 1984-02-17 | Kazuyuki Kinoshita | 入力装置 |
JPH08339992A (ja) * | 1995-06-13 | 1996-12-24 | Toshiba Corp | 薄膜形成装置および薄膜形成方法 |
JPH09298193A (ja) * | 1996-05-08 | 1997-11-18 | Fuji Film Micro Device Kk | パッシベーション膜の製造方法 |
JP2005159171A (ja) | 2003-11-27 | 2005-06-16 | Kyocera Corp | 太陽電池素子およびその製造方法 |
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Non-Patent Citations (1)
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012039099A1 (ja) * | 2010-09-22 | 2012-03-29 | 株式会社神戸製鋼所 | μ-PCD法を用いた薄膜半導体の結晶性評価装置 |
JP2012069614A (ja) * | 2010-09-22 | 2012-04-05 | Kobe Steel Ltd | 薄膜半導体の結晶性評価装置および方法 |
CN103098194A (zh) * | 2010-09-22 | 2013-05-08 | 株式会社神户制钢所 | 利用μ-PCD法的薄膜半导体的结晶性评价装置 |
TWI451080B (zh) * | 2010-09-22 | 2014-09-01 | Kobe Steel Ltd | Method for evaluating crystallinity of thin film semiconductor and method thereof |
KR101465377B1 (ko) | 2010-09-22 | 2014-11-26 | 가부시키가이샤 고베 세이코쇼 | μ-PCD법을 사용한 박막 반도체의 결정성 평가 장치 |
US8952338B2 (en) | 2010-09-22 | 2015-02-10 | Kobe Steel, Ltd. | Crystalline quality evaluation apparatus for thin-film semiconductors, using μ-PCD technique |
JP2013195096A (ja) * | 2012-03-16 | 2013-09-30 | Kobe Steel Ltd | 半導体結晶性評価装置および該方法 |
JP2016508286A (ja) * | 2012-12-06 | 2016-03-17 | サンパワー コーポレイション | 太陽電池導電性コンタクトのシード層 |
JP2019517142A (ja) * | 2016-05-17 | 2019-06-20 | アメリカ合衆国 | AlGaN/GaN高電子移動度トランジスタのダメージフリープラズマCVDパッシベーション |
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US8735201B2 (en) | 2014-05-27 |
TW201034231A (en) | 2010-09-16 |
JPWO2010074283A1 (ja) | 2012-06-21 |
EP2381483B1 (en) | 2014-12-10 |
MY155992A (en) | 2015-12-31 |
EP2381483A4 (en) | 2013-09-04 |
TWI463687B (zh) | 2014-12-01 |
JP5520834B2 (ja) | 2014-06-11 |
US20110294256A1 (en) | 2011-12-01 |
CN102265407B (zh) | 2014-02-05 |
CN102265407A (zh) | 2011-11-30 |
KR20110101223A (ko) | 2011-09-15 |
EP2381483A1 (en) | 2011-10-26 |
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