WO2010067704A1 - 光起電力装置及びその製造方法 - Google Patents

光起電力装置及びその製造方法 Download PDF

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Publication number
WO2010067704A1
WO2010067704A1 PCT/JP2009/069838 JP2009069838W WO2010067704A1 WO 2010067704 A1 WO2010067704 A1 WO 2010067704A1 JP 2009069838 W JP2009069838 W JP 2009069838W WO 2010067704 A1 WO2010067704 A1 WO 2010067704A1
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
electrode
cell unit
intermediate layer
photovoltaic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2009/069838
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
稔枝 國井
茂郎 矢田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to US13/121,797 priority Critical patent/US20110197952A1/en
Publication of WO2010067704A1 publication Critical patent/WO2010067704A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/33—Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/40—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in a mechanically stacked configuration
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Definitions

  • the solar cell unit as a power generation layer is exposed to oxygen, resulting in a new problem that the characteristics of the solar cell unit itself deteriorate.
  • the first separation groove A is formed in the surface electrode 22.
  • the separation groove A is formed by laser processing, for example.
  • an Nd: YAG laser having a wavelength of about 1064 nm and an energy density of 1 ⁇ 10 5 W / cm 2 is used.
  • the line width of the separation groove A is preferably 10 ⁇ m or more and 200 ⁇ m or less.

Landscapes

  • Photovoltaic Devices (AREA)
PCT/JP2009/069838 2008-12-09 2009-11-25 光起電力装置及びその製造方法 Ceased WO2010067704A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/121,797 US20110197952A1 (en) 2008-12-09 2009-11-25 Photovoltaic device and manufacturing method for a photovoltaic device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008313001A JP2010140935A (ja) 2008-12-09 2008-12-09 光起電力装置及びその製造方法
JP2008-313001 2008-12-09

Publications (1)

Publication Number Publication Date
WO2010067704A1 true WO2010067704A1 (ja) 2010-06-17

Family

ID=42242694

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2009/069838 Ceased WO2010067704A1 (ja) 2008-12-09 2009-11-25 光起電力装置及びその製造方法

Country Status (3)

Country Link
US (1) US20110197952A1 (https=)
JP (1) JP2010140935A (https=)
WO (1) WO2010067704A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102456757A (zh) * 2010-10-26 2012-05-16 富阳光电股份有限公司 多层堆栈结构的半导体元件
WO2013041467A1 (de) * 2011-09-19 2013-03-28 Saint-Gobain Glass France Dünnschichtsolarmodul mit serienverschaltung und verfahren zur serienverschaltung von dünnschichtsolarzellen

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6237920U (https=) * 1985-08-26 1987-03-06
JPS6384074A (ja) * 1986-09-26 1988-04-14 Sanyo Electric Co Ltd 光起電力装置
JPH09162431A (ja) * 1995-12-13 1997-06-20 Kanegafuchi Chem Ind Co Ltd 並列型集積化太陽電池
JPH11274527A (ja) * 1998-03-24 1999-10-08 Sanyo Electric Co Ltd 光起電力装置
JP2001068707A (ja) * 1999-08-27 2001-03-16 Univ Osaka 導電性材料、導電性薄膜、複合膜、及び導電性材料の製造方法
JP2003273383A (ja) * 2002-03-15 2003-09-26 Sharp Corp 太陽電池素子およびその製造方法
JP2005038907A (ja) * 2003-07-15 2005-02-10 Kyocera Corp 集積型光電変換装置
JP2005093939A (ja) * 2003-09-19 2005-04-07 Mitsubishi Heavy Ind Ltd 集積型タンデム接合太陽電池及び集積型タンデム接合太陽電池の製造方法
JP2005217038A (ja) * 2004-01-28 2005-08-11 Sanyo Electric Co Ltd ｐ型ＺｎＯ半導体膜及びその製造方法
JP2005322707A (ja) * 2004-05-07 2005-11-17 Mitsubishi Heavy Ind Ltd 集積型太陽電池
JP2006313872A (ja) * 2005-04-06 2006-11-16 Mitsubishi Heavy Ind Ltd 多接合薄膜太陽電池

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6237920U (https=) * 1985-08-26 1987-03-06
JPS6384074A (ja) * 1986-09-26 1988-04-14 Sanyo Electric Co Ltd 光起電力装置
JPH09162431A (ja) * 1995-12-13 1997-06-20 Kanegafuchi Chem Ind Co Ltd 並列型集積化太陽電池
JPH11274527A (ja) * 1998-03-24 1999-10-08 Sanyo Electric Co Ltd 光起電力装置
JP2001068707A (ja) * 1999-08-27 2001-03-16 Univ Osaka 導電性材料、導電性薄膜、複合膜、及び導電性材料の製造方法
JP2003273383A (ja) * 2002-03-15 2003-09-26 Sharp Corp 太陽電池素子およびその製造方法
JP2005038907A (ja) * 2003-07-15 2005-02-10 Kyocera Corp 集積型光電変換装置
JP2005093939A (ja) * 2003-09-19 2005-04-07 Mitsubishi Heavy Ind Ltd 集積型タンデム接合太陽電池及び集積型タンデム接合太陽電池の製造方法
JP2005217038A (ja) * 2004-01-28 2005-08-11 Sanyo Electric Co Ltd ｐ型ＺｎＯ半導体膜及びその製造方法
JP2005322707A (ja) * 2004-05-07 2005-11-17 Mitsubishi Heavy Ind Ltd 集積型太陽電池
JP2006313872A (ja) * 2005-04-06 2006-11-16 Mitsubishi Heavy Ind Ltd 多接合薄膜太陽電池

Also Published As

Publication number Publication date
US20110197952A1 (en) 2011-08-18
JP2010140935A (ja) 2010-06-24

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