WO2010059954A2 - Procédé de co-optimisation de source et de masque de forme libre rapide - Google Patents
Procédé de co-optimisation de source et de masque de forme libre rapide Download PDFInfo
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- WO2010059954A2 WO2010059954A2 PCT/US2009/065359 US2009065359W WO2010059954A2 WO 2010059954 A2 WO2010059954 A2 WO 2010059954A2 US 2009065359 W US2009065359 W US 2009065359W WO 2010059954 A2 WO2010059954 A2 WO 2010059954A2
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- cost function
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
- G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70083—Non-homogeneous intensity distribution in the mask plane
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70125—Use of illumination settings tailored to particular mask patterns
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
Definitions
- the present invention relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes.
- Lithographic apparatuses can be used, for example, in the manufacture of integrated circuits (ICs).
- the mask may contain a circuit pattern corresponding to an individual layer of the IC, and this pattern can be imaged onto a target portion (e.g. comprising one or more dies) on a substrate (silicon wafer) that has been coated with a layer of radiation-sensitive material (resist).
- a target portion e.g. comprising one or more dies
- substrate silicon wafer
- resist radiation-sensitive material
- a single wafer will contain a whole network of adjacent target portions that are successively irradiated via the projection system, one at a time.
- each target portion is irradiated by exposing the entire mask pattern onto the target portion in one go; such an apparatus is commonly referred to as a wafer stepper.
- each target portion is irradiated by progressively scanning the mask pattern under the projection beam in a given reference direction (the "scanning" direction) while synchronously scanning the substrate table parallel or anti-parallel to this direction.
- the projection system will have a magnification factor M (generally ⁇ 1), the speed Fat which the substrate table is scanned will be a factor M times that at which the mask table is scanned. More information with regard to lithographic devices as described herein can be gleaned, for example, from US 6,046,792, incorporated herein by reference.
- a mask pattern is imaged onto a substrate that is at least partially covered by a layer of radiation-sensitive material (resist).
- the substrate Prior to this imaging step, the substrate may undergo various procedures, such as priming, resist coating and a soft bake. After exposure, the substrate may be subjected to other procedures, such as a post-exposure bake (PEB), development, a hard bake and measurement/inspection of the imaged features.
- PEB post-exposure bake
- This array of procedures is used as a basis to pattern an individual layer of a device, e.g., an IC.
- Such a patterned layer may then undergo various processes such as etching, ion-implantation (doping), metallization, oxidation, chemo-mechanical polishing, etc., all intended to finish off an individual layer. If several layers are required, then the whole procedure, or a variant thereof, will have to be repeated for each new layer. Eventually, an array of devices will be present on the substrate (wafer). These devices are then separated from one another by a technique such as dicing or sawing, whence the individual devices can be mounted on a carrier, connected to pins, etc.
- the projection system may hereinafter be referred to as the "lens"; however, this term should be broadly interpreted as encompassing various types of projection systems, including refractive optics, reflective optics, and catadioptric systems, for example.
- the radiation system may also include components operating according to any of these design types for directing, shaping or controlling the projection beam of radiation, and such components may also be referred to below, collectively or singularly, as a "lens".
- the lithographic apparatus may be of a type having two or more substrate tables (and/or two or more mask tables).
- twin stage lithographic apparatus are described, for example, in US 5,969,441 , incorporated herein by reference.
- the photolithographic masks referred to above comprise geometric patterns corresponding to the circuit components to be integrated onto a silicon wafer.
- the patterns used to create such masks are generated utilizing CAD (computer-aided design) programs, this process often being referred to as EDA (electronic design automation).
- EDA electronic design automation
- Most CAD programs follow a set of predetermined design rules in order to create functional masks. These rules are set by processing and design limitations. For example, design rules define the space tolerance between circuit devices (such as gates, capacitors, etc.) or interconnect lines, so as to ensure that the circuit devices or lines do not interact with one another in an undesirable way.
- the design rule limitations are typically referred to as "critical dimensions" (CD).
- a critical dimension of a circuit can be defined as the smallest width of a line or hole or the smallest space between two lines or two holes.
- the CD determines the overall size and density of the designed circuit.
- one of the goals in integrated circuit fabrication is to faithfully reproduce the original circuit design on the wafer (via the mask).
- microlithography is a central step in the manufacturing of semiconductor integrated circuits, where patterns formed on semiconductor wafer substrates define the functional elements of semiconductor devices, such as microprocessors, memory chips etc. Similar lithographic techniques are also used in the formation of flat panel displays, micro-electro mechanical systems (MEMS) and other devices.
- MEMS micro-electro mechanical systems
- RET resolution enhancement techniques
- optical proximity correction addresses the fact that the final size and placement of a printed feature on the wafer will not simply be a function of the size and placement of the corresponding feature on the mask.
- 'mask' and 'reticle' are utilized interchangeably herein.
- the position of a particular edge of a given feature will be influenced to a certain extent by the presence or absence of other adjacent features.
- proximity effects arise from minute amounts of light coupled from one feature to another.
- proximity effects may arise from diffusion and other chemical effects during post-exposure bake (PEB), resist development, and etching that generally follow lithographic exposure.
- PEB post-exposure bake
- Both OPC and full-chip RET verification may be based on numerical modeling systems and methods as described, for example in, U.S. Patent App. No. 10/815 ,573 and an article titled "Optimized Hardware and Software For Fast, Full Chip Simulation", by Y. Cao et al., Proc. SPIE, Vol. 5754, 405 (2005).
- the illumination scheme utilized in the imaging process can be also optimized, either jointly with mask optimization or separately, in an effort to improve the overall lithography fidelity.
- off-axis light sources such as annular, quadrupole, and dipole
- off-axis illumination is a proven way to resolve fine structures (i.e., target features) contained in the mask.
- an off-axis illuminator usually provides less light intensity for the aerial image (AI) .
- AI aerial image
- NA hyper numerical apertures
- the present invention relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes.
- the present invention significantly speeds up the convergence of the optimization by allowing direct computation of gradient of a wide class of cost functions.
- the present invention allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence and improving the final result.
- the present invention allows for free-form optimization, without the constraints required by conventional optimization techniques, and discovers the full process window entitlement absent manufacturability constraints.
- the present invention employs a method to place sub-resolution assist feature (SRAF) seeds according to free-form optimization results and grows these SRAF seeds simultaneously while performing main feature optical proximity correction (OPC) in a subsequent constrained optimization that takes into account manufacturability constraints from both source and mask sides.
- SRAF sub-resolution assist feature
- OPC main feature optical proximity correction
- the present invention utilizes a cost function to minimize the worst edge placement errors across process window, and a computationally friendly approximation to such a cost function.
- a method for optimizing a lithographic process includes receiving descriptions of an illumination source and a mask, the mask comprising a lithography pattern, and until the source and mask are simultaneously optimized for a process window of the lithographic process, selectively repeating the steps of: forming a cost function as a function of both the illumination source and mask, calculating the gradient of the cost function, and reconfiguring the source and mask descriptions depending on the calculated gradient.
- a method for optimizing a lithographic process having an illumination source and a mask includes forming a cost function as a function of descriptions of both the illumination source and mask, wherein the cost function is formulated in terms of worst case edge placement error over a given process window, and calculating a gradient of the cost function.
- a method for optimizing a lithographic process having an illumination source and a mask includes a free- form optimization process, placing SRAF seeds in a description of the mask based on a result of the free-form optimization process, and a constrained optimization process, including growing the SRAF seeds while taking into account manufacturability constraints for both the illumination source and the mask.
- the terms "radiation” and “beam” are used to encompass all types of electromagnetic radiation, including ultraviolet radiation (e.g. with a wavelength of 365, 248, 193, 157 or 126 nm) and EUV (extreme ultra-violet radiation, e.g. having a wavelength in the range 5-20 nm).
- mask as employed in this text may be broadly interpreted as referring to generic patterning means that can be used to endow an incoming radiation beam with a patterned cross-section, corresponding to a pattern that is to be created in a target portion of the substrate; the term "light valve" can also be used in this context.
- classic mask transmissive or reflective; binary, phase-shifting, hybrid, etc.
- examples of other such patterning means include:
- a programmable mirror array • a programmable mirror array.
- An example of such a device is a matrix-addressable surface having a viscoelastic control layer and a reflective surface.
- the basic principle behind such an apparatus is that (for example) addressed areas of the reflective surface reflect incident light as diffracted light, whereas unaddressed areas reflect incident light as undiffracted light.
- the said undiffracted light can be filtered out of the reflected beam, leaving only the diffracted light behind; in this manner, the beam becomes patterned according to the addressing pattern of the matrix -addressable surface.
- the required matrix addressing can be performed using suitable electronic means. More information on such mirror arrays can be gleaned, for example, from United States Patents US 5,296,891 and US 5,523,193, which are incorporated herein by reference.
- FIG. 1 is an exemplary block diagram illustrating a typical lithographic projection system.
- FIG. 2 is an exemplary block diagram illustrating the functional modules of a lithographic simulation model.
- FIG. 3 is a schematic depiction of the general optimization process employed in certain aspects of the invention.
- FIG. 4 is a chart illustrating a source and continuous transmission mask co-optimization flow (CTM flow) according to additional embodiments of the invention.
- FIG. 5 illustrates a resultant source and mask for an example application of a design for a DRAM.
- FIG. 6 illustrates a converted "New 37 illuminator and DOE source according to an example application of the invention.
- FIGs. 7A and 7B illustrate example masks that result with a DOE source
- FIG. 8 is a block diagram that illustrates a computer system which can assist in the implementation of the simulation method of the present invention.
- FIG. 9 schematically depicts a lithographic projection apparatus suitable for use with the method of the present invention
- Fig. 1 illustrates an exemplary lithographic projection system 10.
- the major components are a light source 12, which may be a deep-ultraviolet excimer laser source, illumination optics which define the partial coherence (denoted as sigma) and which may include specific source shaping optics 14, 16a and 16b; a mask or reticle 18; and projection optics 16c that produce an image of the reticle pattern onto the wafer plane 22.
- An adjustable filter or aperture 20 at the pupil plane may restrict the range of beam angles that impinge on the wafer plane 22, where the largest possible angle defines the numerical aperture of the projection optics
- the functional modules include the design layout module 26, which defines the target design; the mask layout module 28, which defines the mask to be utilized in the imaging process; the mask model module 30, which defines the model of the mask layout to be utilized during the simulation process; the optical model module 32, which defines the performance of the optical components of lithography system; and the resist model module 34, which defines the performance of the resist being utilized in the given process.
- the result of the simulation process produces, for example, predicted contours and CDs in the result module 36.
- the properties of the illumination and projection optics are captured in the optical model 32 that includes, but not limited to, NA-sigma ( ⁇ ) settings as well as any particular illumination source shape (e.g. off-axis light sources such as annular, quadrupole, and dipole, etc.).
- the optical properties of the photo-resist layer coated on a substrate ⁇ i.e. refractive index, film thickness, propagation and polarization effects — may also be captured as part of the optical model 32.
- the mask model 30 captures the design features of the reticle and may also include a representation of detailed physical properties of the mask, as described, for example, in US Patent 7,587,704.
- the resist model 34 describes the effects of chemical processes which occur during resist exposure, PEB and development, in order to predict, for example, contours of resist features formed on the substrate wafer.
- the objective of the simulation is to accurately predict, for example, edge placements and CDs, which can then be compared against the target design.
- the target design is generally defined as the pre-OPC mask layout, and will be provided in a standardized digital file format such as GDSII or OASIS. [0041] In a typical high-end design almost every feature edge requires some modification in order to achieve printed patterns that come sufficiently close to the target design.
- optimization techniques applied to the source of illumination may have different effects on different edges and features. Optimization of illumination sources can include the use of pupils to restrict source illumination to a selected pattern of light. The present invention provides optimization methods that can be applied to both source and mask configurations simultaneously.
- certain embodiments of the present invention provide methods for accelerated and simultaneous optimization of mask and source.
- Initial source 320 and mask 322 configurations e.g. corresponding to optical model 32 and mask model 30 described above, respectively
- Optimization module 324 comprises an iterative optimizer that calculates a cost function and a gradient for each iteration.
- a cost function for the mask and source is evaluated for each iteration.
- the gradient of the cost function can then be examined at 342 to determine if convergence has been obtained.
- the gradient is non-zero, then it may be considered that convergence has not been achieved and changes to source and mask can be calculated and applied at 344 before repeating the steps of computing a cost function and gradient for the new mask and source at 340 and testing for convergence 342.
- the final source 326 and mask 326 are considered to be optimized.
- Changes to the source and mask in 344 can be calculated and/or performed in a variety of ways, and it is not necessary for the exact sequence shown in FIG. 3 to be followed in all embodiments.
- optimal results can be obtained by performing an unconstrained (or significantly less constrained) optimization followed by a fully constrained optimization step.
- the relative more freedom in the unconstrained (or less constrained) optimization step means it is likely to reach an optimal solution in a global sense.
- the fully constrained optimization would then start from an initial condition derived from this solution.
- the unconstrained (or less constrained) optimization can be performed in the space of free-form source and free-form mask.
- a free-form source is represented as a source intensity map on a sampling grid in the source pupil plane, and pixel values of the map are allowed to vary freely.
- a free-form mask is the mask transmission map on a sampling grid with each pixel value free to vary. Free-form optimization permits faster calculation of the gradient of the cost function and certain algorithms can be selected to accelerate the achievement of an optimal solution.
- the initial condition of the fully constrained optimization can be constructed from the free-form result via a seeding process.
- the free-form mask result would serve as a guide as to potential locations to insert sub-resolution assist features (SRAF). Small SRAF seeds are then placed at these locations and are allowed to grow or shrink or move during the optimization.
- the main features of the mask design are also co-optimized along with the SRAF seeds to achieve the best solution.
- the free-form source result could also be used to select candidates for the final illumination solutions, for example, ones based on diffractive optical elements (DOE). These source solution candidates could also be simultaneously optimized with main and SRAF mask features.
- DOE diffractive optical elements
- certain aspects of the invention include significantly speeding up the convergence of the optimization by allowing direct computation of the gradient of the cost function.
- the methods include the use of linearized functions selected to optimize the printed wafer contour throughout the process window.
- the cost function is typically based on a pure optical model because optics in photolithography systems tend to determine a majority of the process constraints.
- the cost function may be selected to reduce the worst edge placement error of a design layout throughout the process window.
- the cost function F may be written as:
- pw is a list of process window conditions and variable e runs over a set of evaluation points placed along the target design layout.
- l pw (e) denotes the aerial image intensity at process window condition pw
- Uh the threshold for the aerial image contour.
- the denominator, represents the slope of aerial image.
- a weighting factor w(pw,e) is also preferably introduced to provide extra flexibility to control the goal of the optimization, which could be determined from considerations like evaluation point location (e.g. line, line end, jog) or relevant feature size (e.g. line width, space), or process window position.
- the mask transmissions M(x) and source intensities S(s) can be derived from the received source and mask descriptions (e.g. pixel-based maps corresponding to mask model 30 and optical model 32, respectively), and so details thereof will be omitted here for the sake of clarity of the invention.
- the present inventors recognize that aerial intensity / can be regarded as a function of mask transmissions M(x) and source intensities S(s) , and therefore so can the cost function F.
- the cost function may be expanded using a Taylor series and, in certain embodiments, the floor of the gradient may be discovered using first order terms. More particularly, F may be expressed as:
- This cost function may be minimized using any of a variety of known algorithms when the gradient or derivatives of Fare computed with respect to M and S:
- the aerial image can also be expressed in Hopkins formulation as a sum of coherence systems:
- the variations of the cost function itself as a function of the aerial image can be computed as follows:
- the variation with respect to mask image can be computed as a series of convolutions, thereby providing means for significantly decreasing computation time.
- the variation of the cost function with respect to the aerial image itself may be computed and the form of the cost function may be written:
- cost function is based on EPE.
- examples of other cost functions include (1) the EPE least square function, (2) the EPE least p-norm function where p is even and greater than 2, (3) the inverse NILS p-norm function, (4) the contour integral of image slope with Mas the design target, (5) the edge image value least square, (6) the edge image p-norm (p is even and > 2) and (7) the ILS p-norm with F to be maximized.
- cost function equations are listed below:
- the gradient calculation formulae described above can be implemented in various computing platforms. Additionally or alternatively, specially adapted hardware acceleration platforms can be used to further improve the optimization speed. For example, platforms can that include specialized digital signal processors ("DSPs") can be employed to process cost functions and calculate gradients. However, it will be appreciated that calculations maybe performed on other computing platforms that can comprise parallel processors, mathematical coprocessors and DSP based coprocessors.
- DSPs digital signal processors
- FIG. 4 illustrates a source and continuous transmission mask co-optimization flow (CTM flow) according to additional embodiments of the invention.
- the first step of the CTM flow is to set up all the input parameters for the optimization including: Model, DOE type, polarization, mask manufacture rule check (MRC) and process information etc. (502).
- MRC mask manufacture rule check
- process information etc. 502
- a user specifies the type of source constraints to be applied, either custom DOE or fully- flexible illuminator. This will determine later how the unconstrained freeform source will be converted and co-optimized.
- These setup parameters are used through out the entire flow.
- models will be created at user-specified PW comer conditions as shown in FIG, 4 (504). Users can specify the DOF versus EL trade off in this step, for example.
- step 506 starts the co-optimization with unconstrained freeform source and continuous transmission mask, using for example the optimization process of optimization module 324, including the cost function and gradient calculations, freeform source and mask optimizations and assist feature optimizations described above.
- the only constraint in this stage is the upper and lower bound of mask and source transmission which has physical limitations. Without constraints, optimization in this stage will search for solutions in the largest possible solution space, and give the best possible process window (PW) and MEF.
- PW process window
- the resultant source 602 and mask 604 for an example application of a design for a DRAM is shown in FIG. 5, respectively. However, neither the freeform source nor continuous transmission mask are manufacturable.
- a manufacturable source such as a DOE 704 shown in FIG. 6 or a "New" (e.g. fully flexible) illuminator 702 shown in FIG. 6.
- the mask needs to be constrained to a fixed transmission value (510).
- the selected source-mask combination is co -optimized using the scanner illuminator and mask manufacture rule check (MRC) constraints.
- the "New" illuminator closely resembles the freeform source (resulting from 514), and is expected to give minimal impact on the PW (as analyzed in 516) compared to a parametric DOE source (resulting from 512).
- FIG. 6 shows the converted
- FIGs. 7A and 7B show the masks 804 and 808 that result with the DOE source 802 and "New" illuminator 806, respectively.
- Computer system 100 includes a bus 102 or other communication mechanism for communicating information, and a processor 104 coupled with bus 102 for processing information.
- Computer system 100 also includes a main memory 106, such as a random access memory (RAM) or other dynamic storage device, coupled to bus 102 for storing information and instructions to be executed by processor 104.
- Main memory 106 also may be used for storing temporary variables or other intermediate information during execution of instructions to be executed by processor 104.
- Computer system 100 further includes a read only memory (ROM) 108 or other static storage device coupled to bus 102 for storing static information and instructions for processor 104.
- a storage device 1 such as a magnetic disk or optical disk, is provided and coupled to bus 102 for storing information and instructions.
- Computer system 100 may be coupled via bus 102 to a display 1 12, such as a cathode ray tube (CRT) or flat panel or touch panel display for displaying information to a computer user.
- a display 1 such as a cathode ray tube (CRT) or flat panel or touch panel display for displaying information to a computer user.
- An input device 114 is coupled to bus 102 for communicating information and command selections to processor 104.
- cursor control 1 16 is Another type of user input device for communicating direction information and command selections to processor 104 and for controlling cursor movement on display 1 12.
- This input device typically has two degrees of freedom in two axes, a first axis (e.g., x) and a second axis (e.g., y), that allows the device to specify positions in a plane.
- a touch panel (screen) display may also be used as an input device.
- portions of the optimization process may be performed by computer system 100 in response to processor 104 executing one or more sequences of one or more instructions contained in main memory 106. Such instructions may be read into main memory 106 from another computer-readable medium, such as storage device 1 10. Execution of the sequences of instructions contained in main memory 106 causes processor 104 to perform the process steps described herein.
- processors in a multi -processing arrangement may also be employed to execute the sequences of instructions contained in main memory 106.
- hard-wired circuitry may be used in place of or in combination with software instructions to implement the invention.
- embodiments of the invention are not limited to any specific combination of hardware circuitry and software.
- computer-readable medium refers to any medium that participates in providing instructions to processor 104 for execution. Such a medium may take many forms, including but not limited to, non-volatile media, volatile media, and transmission media.
- Non-volatile media include, for example, optical or magnetic disks, such as storage device 1 10
- Volatile media include dynamic memory, such as main memory 106.
- Transmission media include coaxial cables, copper wire and fiber optics, including the wires that comprise bus 102. Transmission media can also take the form of acoustic or light waves, such as those generated during radio frequency (RF) and infrared (IR) data communications.
- RF radio frequency
- IR infrared
- Common forms of computer-readable media include, for example, a floppy disk, a flexible disk, hard disk, magnetic tape, any other magnetic medium, a CD-ROM, DVD, any other optical medium, punch cards, paper tape, any other physical medium with patterns of holes, a RAM, a PROM, and EPROM, a FLASH-EPROM, any other memory chip or cartridge, a carrier wave as described hereinafter, or any other medium from which a computer can read.
- Various forms of computer readable media may be involved in carrying one or more sequences of one or more instructions to processor 104 for execution.
- the instructions may initially be borne on a magnetic disk of a remote computer.
- the remote computer can load the instructions into its dynamic memory and send the instructions over a telephone line using a modem.
- a modem local to computer system 100 can receive the data on the telephone line and use an infrared transmitter to convert the data to an infrared signal.
- An infrared detector coupled to bus 102 can receive the data carried in the infrared signal and place the data on bus 102.
- Bus 102 carries the data to main memory 106, from which processor 104 retrieves and executes the instructions.
- the instructions received by main memory 106 may optionally be stored on storage device 1 10 either before or after execution by processor 104.
- Computer system 100 also preferably includes a communication interface 1 18 coupled to bus 102.
- Communication interface 1 18 provides a two-way data communication coupling to a network link 120 that is connected to a local network 122.
- communication interface 1 18 may be an integrated services digital network (ISDN) card or a modem to provide a data communication connection to a corresponding type of telephone line.
- ISDN integrated services digital network
- communication interface 118 may be a local area network (LAN) card to provide a data communication connection to a compatible LAN.
- LAN local area network
- Wireless links may also be implemented.
- communication interface 118 sends and receives electrical, electromagnetic or optical signals that carry digital data streams representing various types of information.
- Network link 120 typically provides data communication through one or more networks to other data devices.
- network link 120 may provide a connection through local network 122 to a host computer 124 or to data equipment operated by an Internet Service Provider (ISP) 126.
- ISP 126 in turn provides data communication services through the worldwide packet data communication network, now commonly referred to as the "Internet” 128.
- Internet 128 uses electrical, electromagnetic or optical signals that carry digital data streams.
- the signals through the various networks and the signals on network link 120 and through communication interface 1 18, which carry the digital data to and from computer system 100, are exemplary forms of carrier waves transporting the information.
- Computer system 100 can send messages and receive data, including program code, through the network(s), network link 120, and communication interface 1 18.
- FIG. 9 schematically depicts an exemplary lithographic projection apparatus whose illumination source could be optimized utilizing the process of present invention.
- the apparatus comprises:
- the radiation system also comprises a radiation source LA;
- first object table (mask table) MT provided with a mask holder for holding a mask MA (e.g., a reticle), and connected to first positioning means for accurately positioning the mask with respect to item PL;
- a mask table e.g., a reticle
- a second object table (substrate table) WT provided with a substrate holder for holding a substrate W (e.g., a resist-coated silicon wafer), and connected to second positioning means for accurately positioning the substrate with respect to item PL; - a projection system ("lens") PL (e.g., a refractive, catoptric or catadioptric optical system) for imaging an irradiated portion of the mask MA onto a target portion C (e.g., comprising one or more dies) of the substrate W,
- substrate table substrate table
- PL e.g., a projection system
- PL e.g., a refractive, catoptric or catadioptric optical system
- the apparatus is of a transmissive type (i.e., has a transmissive mask). However, in general, it may also be of a reflective type, for example (with a reflective mask). Alternatively, the apparatus may employ another kind of patterning means as an alternative to the use of a mask; examples include a programmable mirror array or LCD matrix.
- the source LA e.g., a mercury lamp or excimer laser
- the illuminator IL may comprise adjusting means AM for setting the outer and/or inner radial extent (commonly referred to as ⁇ -outer and ⁇ -irmer, respectively) of the intensity distribution in the beam.
- adjusting means AM for setting the outer and/or inner radial extent (commonly referred to as ⁇ -outer and ⁇ -irmer, respectively) of the intensity distribution in the beam.
- ⁇ -outer and ⁇ -irmer respectively
- it will generally comprise various other components, such as an integrator IN and a condenser CO.
- the beam PB impinging on the mask MA has a desired uniformity and intensity distribution in its cross-section.
- the source LA may be within the housing of the lithographic projection apparatus (as is often the case when the source LA is a mercury lamp, for example), but that it may also be remote from the lithographic projection apparatus, the radiation beam that it produces being led into the apparatus (e.g., with the aid of suitable directing mirrors); this latter scenario is often the case when the source LA is an excimer laser (e.g., based on KrF, ArF or F 2 lasing).
- the current invention encompasses at least both of these scenarios.
- the beam PB subsequently intercepts the mask MA, which is held on a mask table
- the beam PB passes through the lens PL, which focuses the beam PB onto a target portion C of the substrate W.
- the substrate table WT can be moved accurately, e.g. so as to position different target portions C in the path of the beam PB.
- the first positioning means can be used to accurately position the mask MA with respect to the path of the beam PB, e.g., after mechanical retrieval of the mask MA from a mask library, or during a scan.
- the object tables MT, WT will be realized with the aid of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning), which are not explicitly depicted in FIG. 9.
- the mask table MT may just be connected to a short stroke actuator, or may be fixed.
- the depicted tool can be used in two different modes:
- the mask table MT is kept essentially stationary, and an entire mask image is projected in one go (i.e., a single "flash") onto a target portion C.
- the substrate table WT is then shifted in the x and/or y directions so that a different target portion C can be irradiated by the beam PB;
- the mask table MT is movable in a given direction (the so-called “scan direction", e.g., the y direction) with a speed v, so that the projection beam PB is caused to scan over a mask image; concurrently, the substrate table WT is simultaneously moved in the same or opposite direction at a speed V- Mv, in which M is the magnification of the lens PL (typically, M- 1/4 or 1/5). In this manner, a relatively large target portion C can be exposed, without having to compromise on resolution.
- the concepts disclosed herein may simulate or mathematically model any generic imaging system for imaging sub wavelength features, and may be especially useful with emerging imaging technologies capable of producing wavelengths of an increasingly smaller size.
- Emerging technologies already in use include EUV (extreme ultra violet) lithography that is capable of producing a 193nm wavelength with the use of a ArF laser, and even a 157nm wavelength with the use of a Fluorine laser.
- EUV lithography is capable of producing wavelengths within a range of 20-5nm by using a synchrotron or by hitting a material (either solid or a plasma) with high energy electrons in order to produce photons within this range.
- illumination may be produced by reflective mirrors with a multi-stack of Molybdenum and Silicon.
- the multi-stack mirror has a 40 layer pairs of Molybdenum and Silicon where the thickness of each layer is a quarter wavelength. Even smaller wavelengths may be produced with X-ray lithography.
- a synchrotron is used to produce an X-ray wavelength. Since most material is absorptive at x-ray wavelengths, a thin piece of absorbing material defines where features would print (positive resist) or not print (negative resist).
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Evolutionary Computation (AREA)
- Geometry (AREA)
- General Engineering & Computer Science (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Priority Applications (8)
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US13/130,548 US8584056B2 (en) | 2008-11-21 | 2009-11-20 | Fast freeform source and mask co-optimization method |
JP2011537660A JP5629691B2 (ja) | 2008-11-21 | 2009-11-20 | 高速自由形式ソース・マスク同時最適化方法 |
KR1020117012618A KR101766734B1 (ko) | 2008-11-21 | 2009-11-20 | 자유 소스 및 자유 마스크를 이용하는 프로세스 최적화 |
CN2009801458739A CN102224459B (zh) | 2008-11-21 | 2009-11-20 | 用于优化光刻过程的方法及设备 |
US14/075,917 US9111062B2 (en) | 2008-11-21 | 2013-11-08 | Fast freeform source and mask co-optimization method |
US14/822,661 US9953127B2 (en) | 2008-11-21 | 2015-08-10 | Fast freeform source and mask co-optimization method |
US15/959,123 US10592633B2 (en) | 2008-11-21 | 2018-04-20 | Fast freeform source and mask co-optimization method |
US16/821,048 US11042687B2 (en) | 2008-11-21 | 2020-03-17 | Fast freeform source and mask co-optimization method |
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US11678808P | 2008-11-21 | 2008-11-21 | |
US61/116,788 | 2008-11-21 |
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US14/075,917 Division US9111062B2 (en) | 2008-11-21 | 2013-11-08 | Fast freeform source and mask co-optimization method |
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JP (2) | JP5629691B2 (fr) |
KR (1) | KR101766734B1 (fr) |
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TW (1) | TWI437377B (fr) |
WO (1) | WO2010059954A2 (fr) |
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Also Published As
Publication number | Publication date |
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CN102224459B (zh) | 2013-06-19 |
JP5629691B2 (ja) | 2014-11-26 |
KR101766734B1 (ko) | 2017-08-16 |
TW201027272A (en) | 2010-07-16 |
US20110230999A1 (en) | 2011-09-22 |
JP6055436B2 (ja) | 2016-12-27 |
KR20110097800A (ko) | 2011-08-31 |
JP2012510165A (ja) | 2012-04-26 |
US20200218850A1 (en) | 2020-07-09 |
US8584056B2 (en) | 2013-11-12 |
US20150356234A1 (en) | 2015-12-10 |
US10592633B2 (en) | 2020-03-17 |
TWI437377B (zh) | 2014-05-11 |
WO2010059954A3 (fr) | 2011-06-23 |
CN102224459A (zh) | 2011-10-19 |
US9953127B2 (en) | 2018-04-24 |
US20180239861A1 (en) | 2018-08-23 |
JP2014135517A (ja) | 2014-07-24 |
US20140068530A1 (en) | 2014-03-06 |
US11042687B2 (en) | 2021-06-22 |
US9111062B2 (en) | 2015-08-18 |
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