WO2010058621A1 - Dispositif d’affichage à cristaux liquides - Google Patents

Dispositif d’affichage à cristaux liquides Download PDF

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Publication number
WO2010058621A1
WO2010058621A1 PCT/JP2009/062714 JP2009062714W WO2010058621A1 WO 2010058621 A1 WO2010058621 A1 WO 2010058621A1 JP 2009062714 W JP2009062714 W JP 2009062714W WO 2010058621 A1 WO2010058621 A1 WO 2010058621A1
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Prior art keywords
electrode
transparent
gate
liquid crystal
crystal display
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PCT/JP2009/062714
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English (en)
Japanese (ja)
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中原聖
森永潤一
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シャープ株式会社
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Priority to US13/127,718 priority Critical patent/US8482689B2/en
Priority to CN200980145047.4A priority patent/CN102239440B/zh
Publication of WO2010058621A1 publication Critical patent/WO2010058621A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors

Definitions

  • the present invention relates to a liquid crystal display device. More specifically, the present invention relates to an active matrix liquid crystal display device in which each pixel includes a thin film transistor for driving a liquid crystal layer.
  • Liquid crystal display devices are widely used in electronic devices such as monitors, projectors, mobile phones, and personal digital assistants (PDAs), taking advantage of their thin and light weight and low power consumption.
  • PDAs personal digital assistants
  • active matrix liquid crystal display devices are widely used because they can realize a good display image without crosstalk between adjacent pixels.
  • an active matrix type liquid crystal display device has an alignment film interposed between a thin film transistor array substrate (hereinafter also referred to as “TFT (Thin Film Transistor) array substrate”)) arranged at a predetermined interval and a counter substrate.
  • TFT Thin Film Transistor
  • a liquid crystal display panel in which a liquid crystal layer is held. Then, by controlling the electric field strength applied between the transparent pixel electrode in each pixel region formed on the TFT array substrate side and the common electrode formed on the counter substrate side, the orientation state of the liquid crystal in each pixel region is controlled. By changing, the light transmittance is changed to display an image.
  • the counter substrate is generally a color filter substrate (hereinafter referred to as a “CF substrate”) having a color filter layer of any of the three colors R (red), G (green), and B (blue) in each pixel region. Is also called.).
  • CF substrate color filter substrate
  • each pixel region is partitioned by a light shielding film (hereinafter also referred to as “black matrix”).
  • black matrix a light shielding film
  • the TFT array substrate includes source lines and gate lines arranged in a grid pattern on the main surface of the transparent substrate.
  • a transparent pixel electrode is disposed in the pixel region defined by the source line and the gate line.
  • a thin film transistor (hereinafter also referred to as “TFT”) is disposed in the vicinity of the intersection of the source line and the gate line.
  • the TFT includes a gate electrode connected to the gate line, a source electrode connected to the source line, and a drain electrode connected to the transparent pixel electrode, and further includes a semiconductor layer made of amorphous silicon (a-Si). .
  • the gate electrode is covered with a gate insulating film (not shown). The TFT controls the transparent pixel electrode individually and selectively.
  • Auxiliary capacitance wiring (hereinafter also referred to as “Cs wiring”) is arranged between the gate lines so as to intersect the source lines.
  • Cs wiring A plurality of Cs wirings are provided in parallel on the TFT array substrate, and among the plurality of pixels arranged in a matrix, a common Cs wiring is used for pixels in the same row.
  • the Cs wiring is normally formed at a position overlapping the transparent pixel electrode, and the auxiliary capacitor for holding the drain voltage is formed by forming a capacitor using the Cs wiring and the transparent pixel electrode as electrodes and an insulating film as a dielectric. can get.
  • an area where the transparent pixel electrode is formed is used as a display area for liquid crystal display.
  • the source line, the gate line, the Cs wiring, the auxiliary capacitance electrode, etc. are formed of a metal material (for example, copper (Cu), silver (Ag)) in order to reduce the resistance.
  • the electrode portions such as the gate electrode are formed of a metal material. Therefore, the area in which these wirings and the like are formed becomes a light-shielding area regardless of the alignment state of the liquid crystal. Therefore, even if it is within the pixel area, it is treated as a non-display area and can be used effectively as a display area. I can't.
  • the area of the light shielding region by the various wirings is reduced in order to improve the ratio of the display region to the entire display screen, that is, the “aperture ratio” in the pixel region. It is requested to do.
  • the wiring resistance may increase.
  • the auxiliary capacitance necessary for preventing crosstalk and flicker of the liquid crystal display device is reduced.
  • this tendency is remarkable, and it is required to increase the aperture ratio of the pixel region while securing an auxiliary capacity.
  • a liquid crystal display device which has a wiring / electrode in which a transparent conductive film is coated on a laminated structure film in which aluminum or an alloy layer mainly composed of aluminum is coated with a refractory metal layer on an insulating substrate.
  • a wiring / electrode in which a transparent conductive film is coated on a laminated structure film in which aluminum or an alloy layer mainly composed of aluminum is coated with a refractory metal layer on an insulating substrate.
  • the liquid crystal display device having such a structure requires a laminated structure film in which a refractory metal layer is coated on an alloy layer, a laminated structure film is manufactured in addition to the conventional TFT array substrate manufacturing process. Further steps are required. Since an increase in the manufacturing process leads to an increase in processing cost, material cost, etc., it is preferable that the aperture ratio can be improved by a simple process. Further, when an aluminum or an alloy layer mainly composed of aluminum is formed in the gate electrode portion of the TFT, electrolytic corrosion may occur due to acid or alkali. Furthermore, the transparent conductive film formed on the laminated structure film is covered with an insulating film. However, if the insulating film is formed after the transparent conductive film is formed, the heat (about 350 ° C.) applied in the insulating film forming process is formed. ) May cause a composition change in the transparent conductive film.
  • the present invention has been made in view of the above situation, and an object of the present invention is to provide a liquid crystal display device having a high aperture ratio in a pixel region while securing a necessary auxiliary capacity.
  • the present inventors have made various studies on a liquid crystal display device having a high aperture ratio in the pixel region.
  • an electrode for forming an auxiliary capacitance is used in a region that is a non-display region in the pixel region, that is, a region occupied by TFTs or various wirings. Focusing on the fact that the proportion of the area occupied by the electrode is large, the auxiliary capacitor forming electrode made of a metal material is made of a transparent electrode, so that the auxiliary capacitor forming electrode can be used as a light transmission region, that is, a display region. It was found that the aperture ratio in the pixel region can be significantly improved.
  • the transparent electrode can be formed in the same layer by using a thin film layer used for improving the adhesion between the drain electrode of the TFT and the gate insulating film, thereby improving the aperture ratio without increasing the number of manufacturing steps. I found out that I could plan. It was also found that by forming on the gate insulating film, these transparent electrodes are not deteriorated by heat at the time of forming the gate insulating film. Furthermore, the formation of the capacitance between the transparent electrode for forming the auxiliary capacitance and the transparent pixel electrode makes it possible to secure the necessary auxiliary capacitance, so that the above problem can be solved brilliantly, and the present invention has been achieved. It is a thing.
  • the present invention is a liquid crystal display device having a thin film transistor array substrate, a liquid crystal layer, and a counter substrate in this order, wherein the thin film transistor array substrate is a source line arranged in a grid pattern on the main surface of the transparent substrate.
  • a gate line a storage capacitor line arranged to intersect the source line between the gate lines, a transparent pixel electrode arranged in a pixel region defined by the source line and the gate line, A storage capacitor line disposed across the pixel area and intersecting the source line, a gate electrode connected to the gate line in the vicinity of the intersection of the source line and the gate line, and connected to the source line
  • a thin film transistor including a source electrode and a drain electrode connected to the transparent pixel electrode, and further comprising the gate electrode and the source electrode and A gate insulating film is provided between the drain electrode and an interlayer insulating film between the source electrode, the drain electrode and the transparent pixel electrode, and is located on the gate insulating film and below the drain electrode.
  • a liquid crystal display device provided with a first transparent electrode and a second transparent electrode connected to the storage capacitor line, the second transparent electrode facing the transparent pixel electrode with the interlayer insulating film interposed therebetween It is.
  • the aperture ratio in the pixel region can be improved while securing the necessary auxiliary capacitance.
  • the second transparent electrode is preferably connected to the auxiliary capacitance line through a contact hole formed in the gate insulating film.
  • the first transparent electrode and the second transparent electrode can be formed on the same layer on the gate insulating film, and each transparent electrode is not deteriorated by heat at the time of forming the gate insulating film.
  • the liquid crystal display device of the present invention can be realized by the same method as before without increasing the number of manufacturing steps.
  • the source line, the gate line, and the Cs wiring are preferably formed of a metal material in order to reduce resistance.
  • electrode portions such as a gate electrode are formed of a metal material.
  • the metal material is aluminum, molybdenum, chromium, tantalum, titanium, Cu, Ag, or the like.
  • These wirings, electrodes, and the like may have a laminated structure with a metal material nitride, indium tin oxide (ITO), or the like.
  • the first transparent electrode connected to the transparent pixel electrode and the second transparent electrode connected to the auxiliary capacitance line are formed on the gate insulating film, so that it is necessary without increasing the number of steps.
  • the aperture ratio in the pixel region can be improved while securing the auxiliary capacitance.
  • FIG. 1 It is a plane schematic diagram which shows the principal part of the TFT array substrate of the liquid crystal display device in Embodiment 1 of this invention.
  • (A) is the plane schematic diagram which showed the some pixel of the TFT array substrate shown in FIG. 1
  • (b) is the plane schematic diagram which showed another example of the TFT array substrate which concerns on Embodiment 1.
  • FIG. . (A) is a schematic cross-sectional view showing a cross section taken along line AB in FIG. 1
  • (b) is a schematic cross-sectional view showing a cross section taken along line CD in FIG.
  • FIG. 4 is a schematic plan view showing a main part of a TFT array substrate of a liquid crystal display device in Comparative Embodiment 1.
  • FIG. 1 is the plane schematic diagram which showed the some pixel of the TFT array substrate shown in FIG. 1
  • (b) is the plane schematic diagram which showed another example of the TFT array substrate which concerns on Embodiment 1.
  • FIG. . (A) is
  • FIG. 5 is a schematic plan view showing a plurality of pixels of the TFT array substrate shown in FIG. 4. It is a plane schematic diagram which shows the principal part of the TFT array substrate of the liquid crystal display device in Comparative Embodiment 2.
  • FIG. 7 is a schematic cross-sectional view showing a cross section taken along line AB in FIG. 6.
  • the liquid crystal display device includes a TFT array substrate, a liquid crystal layer, and a counter substrate in this order. Specifically, it includes a TFT array substrate, a counter substrate provided so as to face the TFT array substrate, and a liquid crystal layer provided so as to be sandwiched between both substrates, and the liquid crystal layer is interposed via an alignment film. Thus, a liquid crystal display panel is obtained.
  • polarizers are respectively attached to the back surface side of the TFT array substrate and the observation surface side of the counter substrate. Then, by controlling the electric field strength applied between the transparent pixel electrode in each pixel region formed on the TFT array substrate side and the common electrode formed on the counter substrate side, the orientation state of the liquid crystal in each pixel region is controlled. By changing the light transmittance, the image is displayed.
  • the light source is a transmissive liquid crystal display device, a backlight or the like is provided on the back side of the liquid crystal display panel, and the light from the back side is guided to the inside of the liquid crystal display panel and emitted to the outside. The image is displayed by.
  • the counter substrate is formed by sequentially laminating a color filter layer formed of a colored layer and a black matrix so as to cover a transparent substrate, an insulating layer covering the color filter layer, a common electrode, and an alignment film.
  • CF substrate having the structure described above.
  • the colored layer is disposed so that one of the three colors red (R), green (G), and blue (B) corresponds to the transparent pixel electrode of the TFT array substrate.
  • Each pixel region is partitioned by a black matrix.
  • the common electrode is formed of, for example, ITO, and is formed as one electrode corresponding to a plurality of pixels, not for each pixel.
  • the TFT array substrate is connected to the first transparent electrode located below the drain electrode on the gate insulating film and to the auxiliary capacitance wiring, and is opposed to the transparent pixel electrode with the interlayer insulating film interposed therebetween. 2 transparent electrodes.
  • FIG. 1 is a schematic plan view showing a main part of a TFT array substrate of a liquid crystal display device according to Embodiment 1 of the present invention.
  • FIG. 2A is a schematic plan view showing a plurality of pixels of the TFT array substrate shown in FIG. 3A is a schematic cross-sectional view showing a cross section taken along line AB in FIG. 1
  • FIG. 3B is a schematic cross-sectional view showing a cross section taken along line CD in FIG. is there.
  • the TFT array substrate 10 includes source lines 12 and gate lines 13 arranged in a lattice pattern on the main surface of a transparent substrate made of a glass substrate, a plastic substrate, or the like. Between the gate lines 13, a Cs wiring 19 is disposed so as to intersect the source line 12. As the Cs wiring 19, for example, a common Cs wiring 19 is used for pixels in the same row among a plurality of pixels arranged in a matrix.
  • the gate line 13 is formed of a laminate of titanium nitride (TiN) / tantalum (Ta) / tantalum nitride (TaN) in order from the upper layer side, and the source line 12 is tantalum (Ta) / tantalum nitride in order from the upper layer side. It is formed of a (TaN) / ITO laminate.
  • the Cs wiring 19 is formed of a material for forming the gate line 13.
  • a transparent pixel electrode is disposed in the pixel region defined by the source line 12 and the gate line 13.
  • the transparent pixel electrode is disposed in the entire pixel region up to a region overlapping with the source line 12 and the gate line 13 in order to improve the aperture ratio, and is used for applying a voltage to the liquid crystal layer.
  • a TFT 30 is formed near the intersection of the source line 12 and the gate line 13.
  • the TFT 30 includes a gate electrode 21 connected to the gate line 13, a source electrode 22 connected to the source line 12, a drain electrode 23, and a semiconductor layer.
  • the semiconductor layer is usually made of amorphous silicon (a-Si) or a polysilicon film.
  • a first transparent electrode 50 and a second transparent electrode 51 are formed in the pixel region surrounded by the gate line 13 and the source line 12.
  • the 1st transparent electrode 50 and the 2nd transparent electrode 51 are demonstrated using Fig.3 (a), (b).
  • a gate electrode 21 is formed on the main surface of the transparent substrate 11, and a gate insulating film 24 is formed so as to cover the gate electrode 21.
  • a semiconductor layer 20, a source electrode 22, and a drain electrode 23 are formed on the gate electrode 21 via a gate insulating film 24, and the TFT 30 described above is formed by these.
  • the TFT 30 individually and selectively controls the transparent pixel electrode 14 formed thereon.
  • a first transparent electrode 50 connected to the transparent pixel electrode 14 is formed on the gate insulating film 24.
  • the TFT 30 and the first transparent electrode 50 are covered with an interlayer insulating film 25, and the transparent pixel electrode 14 is disposed on the interlayer insulating film 25.
  • the first transparent electrode 50 and the transparent pixel electrode 14 are electrically connected via a contact hole 31a formed in the interlayer insulating film 25.
  • the first transparent electrode 50 is a thin film layer formed for improving the adhesion between the drain electrode 23 and the gate insulating film 24 in the TFT 30.
  • the thin film layer is formed of a transparent electrode material. is doing.
  • the connection region between the transparent pixel electrode and the drain electrode is a non-display region.
  • the transparent pixel electrode 14 is connected to the first transparent electrode 50, the connection region can be used as a display region, thereby improving the aperture ratio in the pixel region.
  • a Cs wiring 19 made of the same material as the gate line 13 is formed on the transparent substrate 11 and is covered with a gate insulating film 24.
  • a second transparent electrode 51 connected to the Cs wiring 19 is formed on the gate insulating film 24, and the second transparent electrode 51 and Cs are connected to each other through a contact hole 31 b formed in the gate insulating film 24.
  • the wiring 19 is connected.
  • a transparent pixel electrode 14 is formed on the second transparent electrode 51 with an interlayer insulating film 25 interposed therebetween.
  • the auxiliary capacitance is obtained by forming a capacitor using the second transparent electrode 51 and a part of the transparent pixel electrode 14 as an electrode and the interlayer insulating film 25 as a dielectric. Since the second transparent electrode 51 is formed of a transparent electrode material, the area can be adjusted without affecting the aperture ratio, and a necessary auxiliary capacity can be secured.
  • the auxiliary capacitance electrode for forming the auxiliary capacitance is made of a metal material. Therefore, the ratio of the area occupied by the auxiliary capacity electrode in the non-display area is large.
  • the auxiliary capacity electrode is configured by the second transparent electrode 51, so that the light transmission area, that is, By increasing the display area, the aperture ratio in the pixel area can be significantly improved.
  • the improvement of the aperture ratio can contribute not only to the improvement of the luminance due to the increase of the display area but also to the reduction of the power consumption by the reduction of the light amount of the backlight.
  • Both the first transparent electrode 50 and the second transparent electrode 51 are formed on the gate insulating film 24. Therefore, the first transparent electrode 50 and the second transparent electrode 51 are not deteriorated by a high temperature of about 350 ° C. when the gate insulating film 24 is formed, and the function as the transparent electrode can be exhibited well.
  • first transparent electrode 50 and the second transparent electrode 51 are made of the same material, and both are formed on the gate insulating film 24 at the same time as the ITO film which is the lowermost layer of the source line 12, so They can be formed simultaneously in the process.
  • another transparent conductive material constituting the first transparent electrode 50 and the second transparent electrode 51 for example, indium zinc oxide (IZO), zinc oxide, or the like can be used.
  • the first transparent electrode 50 is a thin film layer used for improving the adhesion between the drain electrode 23 and the gate insulating film 24 in the gate electrode 21 portion of the TFT 30.
  • the first transparent electrode 50 is an ITO film that is the lowermost layer of the source line 12. Can be formed without increasing the manufacturing process, that is, without increasing processing costs and material costs.
  • the present embodiment by providing the first transparent electrode 50 and the second transparent electrode 51 on the gate insulating film 24, a high opening can be obtained while ensuring an auxiliary capacity without increasing the number of steps. Rate can be realized.
  • the liquid crystal display device according to the present embodiment is not particularly limited by the other components as long as it is an active matrix type liquid crystal display device configured with the above-described components of the TFT array substrate 10 as essential elements. Further, the shape and the like of the first transparent electrode 50 and the second transparent electrode 51 are not particularly limited as long as the above effects are obtained.
  • FIG. 2B is a schematic plan view showing an example of another shape of the TFT array substrate.
  • the same components as those in FIG. 2A are denoted by the same reference numerals, and description thereof is omitted here. Similar effects can be obtained even with the TFT array substrate 10a having the shape of the first transparent electrode 50a and the second transparent electrode 51a as shown in FIG.
  • the structure of the TFT array substrate according to the comparative embodiment will be described below with reference to the drawings.
  • FIG. 4 is a schematic plan view showing the main part of the TFT array substrate of the liquid crystal display device in Comparative Embodiment 1.
  • FIG. 5 is a schematic plan view showing a plurality of pixels of the TFT array substrate shown in FIG.
  • the TFT array substrate 60 includes source lines 62 and gate lines 63 arranged in a grid pattern on the main surface of the transparent substrate.
  • a transparent pixel electrode (not shown) is arranged in the pixel region defined by the source line 62 and the gate line 63.
  • a TFT 80 is arranged in the vicinity of the intersection of the source line 62 and the gate line 63.
  • the TFT 80 includes a gate electrode 71 connected to the gate line 63, a source electrode 72 connected to the source line 62, and a drain electrode 73 connected to the transparent pixel electrode, and further includes a semiconductor layer.
  • the gate electrode 71 is covered with a gate insulating film.
  • the TFT 80 individually and selectively controls the transparent pixel electrode.
  • a Cs wiring 69 is disposed between the gate lines 63 so as to intersect the source line 62.
  • a plurality of Cs wirings 69 are provided in parallel on the TFT array substrate 60, and a common Cs wiring 69 is used for pixels in the same row among a plurality of pixels arranged in a matrix.
  • an auxiliary capacitance electrode 68 is formed in the Cs wiring 69 at a position overlapping the transparent pixel electrode.
  • the Cs wiring 69 and the auxiliary capacitance electrode 68 are formed of the same material as the gate line 63 and the source line 62, that is, a metal material.
  • the auxiliary capacitance electrode 68 is connected to the drain electrode 73 via the wiring 68a, and the auxiliary capacitance for holding the drain voltage is the auxiliary capacitance electrode 68 that is a part of the Cs wiring 69 and a part of the transparent pixel electrode.
  • a capacitor using a gate insulating film as a dielectric is a capacitor using a gate insulating film as a dielectric.
  • the auxiliary capacitance electrode 68 is formed of a metal material, and the auxiliary capacitance electrode 68 and the drain electrode 73 are connected.
  • the display area is larger than that of the liquid crystal display device in the first embodiment. This is also clear from a comparison between FIG. 2 in the first embodiment and FIG. 5 in the first comparative embodiment.
  • the black portion indicates a non-display area. 2 and 5, the non-display area is much smaller in FIG. 2, so that the liquid crystal display device according to the first embodiment is higher than the liquid crystal display device according to the first embodiment. It can be seen that the aperture ratio can be obtained.
  • FIG. 6 is a schematic plan view showing the main part of the TFT array substrate of the liquid crystal display device in Comparative Embodiment 2.
  • FIG. 7 is a schematic cross-sectional view showing a cross section taken along line AB in FIG. Components having the same configurations as those in FIGS. 4 and 5 are denoted by the same reference numerals, and description thereof is omitted here.
  • a transparent electrode 96 is formed at a position facing the transparent pixel electrode 64.
  • the transparent electrode 96 is an electrode formed integrally with a part of the Cs wiring 69a as described later.
  • a Cs wiring 69 a is formed on the transparent substrate 81 and is covered with a gate insulating film 94.
  • a transparent pixel electrode 64 is formed on the gate insulating film 94 via an interlayer insulating film 95.
  • the Cs wiring 69a includes a wiring / electrode in which a transparent conductive film 93 is coated on a laminated structure film of aluminum or an alloy layer 91 mainly composed of aluminum and a refractory metal layer 92 covering the alloy layer 91. It has become.
  • the transparent electrode 96 is formed of a transparent conductive film 93 that is a part of the Cs wiring 69a, and is integrated with the Cs wiring 69a.
  • the auxiliary capacitor is formed between the transparent electrode 96 and the transparent pixel electrode 64 using the gate insulating film 94 and the interlayer insulating film 95 as a capacitor.
  • the liquid crystal display device having the above configuration has a higher aperture ratio than the liquid crystal display device described in the first embodiment.
  • the Cs wiring 69a requires a laminated structure film composed of the alloy layer 91 and the refractory metal layer 92, an additional process for forming the laminated structure film is required, which increases processing costs and material costs. Leads to.
  • the gate electrode 71 portion of the TFT is formed with aluminum or an alloy layer 91 mainly composed of aluminum, electrolytic corrosion may occur due to acid or alkali.
  • the transparent conductive film 93 and the transparent electrode 96 are covered with the gate insulating film 94, the composition change may occur due to heat (about 350 ° C.) applied in the film forming process of the gate insulating film 94.
  • the first transparent electrode 50 and the second transparent electrode 51 are provided on the gate insulating film 24, so that the transparent electrode can be deteriorated without increasing the number of steps.
  • a high aperture ratio can be realized while ensuring an auxiliary capacity without being generated.

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Abstract

L’invention concerne un dispositif d’affichage à cristaux liquides comportant une ouverture fortement numérique dans une zone de pixels tout en assurant une capacité auxiliaire nécessaire.  Le dispositif d’affichage à cristaux liquides comporte un substrat de matrice de transistors à couche mince, une couche de cristaux liquides, et un substrat opposé disposés dans cet ordre.  Le substrat de matrice de transistors à couche mince comprend : une ligne de source et une ligne de gâchette arrangées sous forme de réseau ; un circuit de capacité auxiliaire ; une électrode de pixels transparente disposée dans la zone de pixels ; et un transistor à couche mince comportant une électrode de gâchette, une électrode de source et une électrode de drain.  Une pellicule d’isolation de gâchette est disposée entre les couches de l’électrode de gâchette, l’électrode de source et l’électrode de drain.  Une pellicule d’isolation intercouche est disposée entre les couches de l’électrode de source, l’électrode de drain et l’électrode de pixels transparente.  Sur la pellicule d’isolation de gâchette sont disposées une première électrode transparente positionnée sur la couche inférieure de l’électrode de drain et une deuxième électrode transparente connectée au circuit de capacité auxiliaire.  La deuxième électrode transparente est positionnée en opposition à l’électrode de pixels transparente de sorte que la deuxième électrode transparente et l’électrode de pixels transparente encadrent la couche d’isolation intercouche.
PCT/JP2009/062714 2008-11-21 2009-07-14 Dispositif d’affichage à cristaux liquides WO2010058621A1 (fr)

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US13/127,718 US8482689B2 (en) 2008-11-21 2009-07-14 Liquid crystal display device
CN200980145047.4A CN102239440B (zh) 2008-11-21 2009-07-14 液晶显示装置

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JP2008297926A JP2012027046A (ja) 2008-11-21 2008-11-21 液晶表示装置
JP2008-297926 2008-11-21

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CN102239440A (zh) 2011-11-09
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CN102239440B (zh) 2014-05-07
US20110205478A1 (en) 2011-08-25

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