WO2010058264A1 - P-TYPE SiC SEMICONDUCTOR - Google Patents
P-TYPE SiC SEMICONDUCTOR Download PDFInfo
- Publication number
- WO2010058264A1 WO2010058264A1 PCT/IB2009/007497 IB2009007497W WO2010058264A1 WO 2010058264 A1 WO2010058264 A1 WO 2010058264A1 IB 2009007497 W IB2009007497 W IB 2009007497W WO 2010058264 A1 WO2010058264 A1 WO 2010058264A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- concentration
- atom number
- type sic
- sic semiconductor
- satisfy
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 239000013078 crystal Substances 0.000 claims abstract description 18
- 239000012535 impurity Substances 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 description 11
- 238000002513 implantation Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 230000006872 improvement Effects 0.000 description 4
- 239000000370 acceptor Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000005092 sublimation method Methods 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- 229910008381 Si—Al-M Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
Definitions
- the invention relates to a SiC semiconductor, and in particular to a p-type SiC semiconductor of low resistance.
- JP-A-2005-507360 describes the method of obtaining a semi-insulating SiC single crystal of high resistance by employing the combination of deep-energy-level intrinsic defects of high concentration and deep-energy-level acceptors (Ti and B).
- Ti and B deep-energy-level acceptors
- a method of manufacturing a p-type SiC single crystal by Al-doping, modified LeIy method (sublimation method) is described in T. L. Staubinger, et al. Mat. Sci. Forum 389-393 (2002) p.131.
- the crystal growth with high-concentration Al doping can adversely affect the crystallinity.
- JP-A-2008-100890 describes a manufacturing method that is characterized in that the liquid alloy used when a SiC single crystal is grown by liquid-phase growth method, is a Si-Al-M alloy (M is Ti, for example).
- M is Ti, for example.
- Al and Ti are used to obtain a high-quality SiC single crystal and neither a method of controlling the amounts of these elements that are mixed into the crystal made nor the properties of the crystal are described in this document.
- Al and B are representative acceptors for p-type SiC.
- the ionization energy of Al and B is higher than that of N, which is a donor for n-type SiC.
- N which is a donor for n-type SiC.
- JP-A-2007-13154 Published Japanese Translation of PCT application No. 2008-505833 (JP-A-2008-505833), WO2004/090969, Japanese Patent Application Publication No. 10-70273 (JP-A-10-70273), and Japanese Patent Application Publication No. 2006-237319 (JP-A-2006 : 237319) describe that Al and Ti atoms are introduced into a SiC single crystal.
- JP-A-2006 : 237319 describe that Al and Ti atoms are introduced into a SiC single crystal.
- the invention provides a p-type SiC semiconductor of low resistance.
- An aspect of the invention is a p-type SiC semiconductor including a SiC crystal that contains, as impurities, Al and Ti, wherein the atom number concentration of Ti is equal to or less than the atom number concentration of Al.
- the atom number concentration of Al and the atom number concentration of Ti may satisfy the following relations: (Concentration of Al) ⁇ 5 x 10 18 /cm 3 ; and 0.01% ⁇ (Concentration of Ti)/(Concentration of Al) ⁇ 20%.
- the atom number concentration of Al and the atom number concentration of Ti may satisfy the following relations: 5 x 10 /cm ⁇ (Concentration of Al) ⁇ 1 x 10 20 /cm 3 ; and 0.01% ⁇ (Concentration of Ti)/(Concentration of Al) ⁇ 20%.
- the atom number concentration of Al and the atom number concentration of Ti may satisfy the following relations: (Concentration of Al) ⁇ 5 x 10 18 /cm 3 ; and 1 x 10 17 /cm 3 ⁇ (Concentration of Ti) ⁇ 1 x 10 18 /cm 3 .
- the atom number concentration of Al and the atom number concentration of Ti may satisfy the following relations: 5 x 10 /cm ⁇ (Concentration of Al) ⁇ 1 x 10 20 /cm 3 ; and 1 x 10 17 /cm 3 ⁇ (Concentration of Ti) ⁇ 1 x 10 18 /cm 3 .
- a SiC single crystal is caused to contain, as acceptors, Ti as well as Al and the atom number concentration of Ti is equal to or less than the atom number concentration of Al, so that it is possible to reduce the specific resistance as compared to the case where Al alone is added.
- FIG. 1 is a graph showing the variation of specific resistance with the change in the concentration of Ti for each of the concentrations of Al in a SiC single crystal to which Al and Ti atoms are added according to the invention.
- the atom number concentration of Al and the atom number concentration of Ti satisfy the following relations: (Concentration of Al) ⁇ 5 x 10 18 /cm 3 ; and 0.01% ⁇ (Concentration of Ti)/(Concentration of Al) ⁇ 20%.
- the atom number concentration of Al and the atom number concentration of Ti satisfy the following relations: (Concentration of Al) ⁇ 5 x 10 18 /cm 3 ; and 1 x 10 17 /cm 3 ⁇ (Concentration of Ti) ⁇ 1 x 10 18 /cm 3 .
- a sample is made that is obtained by introducing Al and Ti atoms into a SiC single crystal by ion co-implantation.
- a sample is also made that is obtained by introducing only Al into a SiC single crystal.
- Implantation Angle 0 • • ⁇ oo°
- Implantation Substrate Temperature 500 0 C ⁇ High-Temperature Annealing after Implantation>
- the atom number concentration of Al and the atom number concentration of Ti are measured by secondary ion mass spectrometry (SIMS) for each of the samples into which ions have been implanted. Then, by conducting a Hall-effect measurement by the van der Pauw method, the specific resistance of each sample is determined. The result is collectively shown in Table 1. In Table 1, the specific resistance improvement rates that are obtained using the following equation are also shown.
- Improvement Rate (%) ⁇ 1 - (p2/pl) ⁇ x 100 pi: Specific resistance ( ⁇ cm) of the sample when Al alone is introduced p2: Specific resistance ( ⁇ -cm) of the sample when Al and Ti are introduced
- Table 3 shows the ratio (%) of the concentration of Ti to the concentration of Al and Table 4 shows the relations between the respective ratios and the sample numbers.
- FIG. 1 shows the variation of specific resistance with the change in the concentration of Ti when the concentration of Al is 1 x 10 20 /cm 3 and 5 x 10 20 /cm 3 . It is clearly seen that when the concentration of Al is 1 x 10 20 /cm 3 , the specific resistance monotonously decreases as the concentration of Ti increases. When the concentration of Al is 5 x 10 20 /cm 3 , because the concentration of Al is high and the absolute value of the specific resistance is therefore relatively low even when no Ti is added, the decrease in the specific resistance with the increase in the concentration of Ti is small. However, it is perceived that there is a tendency of gradual decrease as a whole.
- a p-type SiC semiconductor is provided that is reduced in resistance as compared to the case where Al alone is added.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009801467545A CN102224592B (zh) | 2008-11-20 | 2009-11-19 | p型SiC半导体 |
| US13/127,814 US8399888B2 (en) | 2008-11-20 | 2009-11-19 | P-type SiC semiconductor |
| DE112009003685.6T DE112009003685B4 (de) | 2008-11-20 | 2009-11-19 | p-SiC-Halbleiter |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008-296814 | 2008-11-20 | ||
| JP2008296814A JP5521317B2 (ja) | 2008-11-20 | 2008-11-20 | ｐ型ＳｉＣ半導体 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2010058264A1 true WO2010058264A1 (en) | 2010-05-27 |
Family
ID=41593032
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/IB2009/007497 WO2010058264A1 (en) | 2008-11-20 | 2009-11-19 | P-TYPE SiC SEMICONDUCTOR |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8399888B2 (ja) |
| JP (1) | JP5521317B2 (ja) |
| CN (1) | CN102224592B (ja) |
| DE (1) | DE112009003685B4 (ja) |
| WO (1) | WO2010058264A1 (ja) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6230031B2 (ja) * | 2013-05-20 | 2017-11-15 | 国立研究開発法人産業技術総合研究所 | 炭化珪素単結晶の製造方法 |
| JP6380267B2 (ja) * | 2015-07-09 | 2018-08-29 | トヨタ自動車株式会社 | ＳｉＣ単結晶及びその製造方法 |
| CN113279065B (zh) * | 2021-04-01 | 2022-01-11 | 浙江大学杭州国际科创中心 | 一种IVB族原子和铝共掺制备p型4H-SiC的方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5063421A (en) * | 1988-08-08 | 1991-11-05 | Sharp Kabushiki Kaisha | Silicon carbide light emitting diode having a pn junction |
| JPH04206578A (ja) * | 1990-11-30 | 1992-07-28 | Toshiba Corp | 炭化珪素半導体素子 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5281831A (en) * | 1990-10-31 | 1994-01-25 | Kabushiki Kaisha Toshiba | Optical semiconductor device |
| DE59711968D1 (de) | 1996-07-19 | 2004-11-04 | Infineon Technologies Ag | Verfahren zur Herstellung einer MIS-Struktur auf Siliziumkarbid (SiC) |
| JP2000277448A (ja) * | 1999-03-26 | 2000-10-06 | Ion Kogaku Kenkyusho:Kk | 結晶材料の製造方法および半導体素子 |
| US6599644B1 (en) * | 2000-10-06 | 2003-07-29 | Foundation For Research & Technology-Hellas | Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide |
| SE520968C2 (sv) | 2001-10-29 | 2003-09-16 | Okmetic Oyj | Högresistiv monokristallin kiselkarbid och metod för dess framställning |
| GB0215150D0 (en) * | 2002-07-01 | 2002-08-07 | Univ Hull | Photoelectric cell |
| WO2004090969A1 (ja) * | 2003-03-24 | 2004-10-21 | National Institute Of Advanced Industrial Science And Technology | 炭化珪素半導体装置およびその製造方法 |
| WO2006017074A2 (en) * | 2004-07-07 | 2006-02-16 | Ii-Vi Incorporated | Low-doped semi-insulating sic crystals and method |
| JP4763314B2 (ja) | 2005-02-25 | 2011-08-31 | 新日本無線株式会社 | ｐ型シリコンカーバイド層の製造方法 |
| US7391058B2 (en) | 2005-06-27 | 2008-06-24 | General Electric Company | Semiconductor devices and methods of making same |
| JP4419937B2 (ja) | 2005-09-16 | 2010-02-24 | 住友金属工業株式会社 | 炭化珪素単結晶の製造方法 |
| JP2008100890A (ja) | 2006-10-20 | 2008-05-01 | Sumitomo Metal Ind Ltd | ＳｉＣ単結晶の製造方法 |
| JP4697235B2 (ja) * | 2008-01-29 | 2011-06-08 | トヨタ自動車株式会社 | ｐ型ＳｉＣ半導体単結晶の製造方法およびそれにより製造されたｐ型ＳｉＣ半導体単結晶 |
-
2008
- 2008-11-20 JP JP2008296814A patent/JP5521317B2/ja active Active
-
2009
- 2009-11-19 DE DE112009003685.6T patent/DE112009003685B4/de active Active
- 2009-11-19 CN CN2009801467545A patent/CN102224592B/zh active Active
- 2009-11-19 WO PCT/IB2009/007497 patent/WO2010058264A1/en active Application Filing
- 2009-11-19 US US13/127,814 patent/US8399888B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5063421A (en) * | 1988-08-08 | 1991-11-05 | Sharp Kabushiki Kaisha | Silicon carbide light emitting diode having a pn junction |
| JPH04206578A (ja) * | 1990-11-30 | 1992-07-28 | Toshiba Corp | 炭化珪素半導体素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| US8399888B2 (en) | 2013-03-19 |
| CN102224592B (zh) | 2013-05-22 |
| DE112009003685B4 (de) | 2020-03-19 |
| DE112009003685T5 (de) | 2012-10-18 |
| CN102224592A (zh) | 2011-10-19 |
| US20110210341A1 (en) | 2011-09-01 |
| JP5521317B2 (ja) | 2014-06-11 |
| JP2010123794A (ja) | 2010-06-03 |
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