WO2010057836A1 - Vorrichtung und verfahren zum beschichten eines substrats mittels cvd - Google Patents
Vorrichtung und verfahren zum beschichten eines substrats mittels cvd Download PDFInfo
- Publication number
- WO2010057836A1 WO2010057836A1 PCT/EP2009/065176 EP2009065176W WO2010057836A1 WO 2010057836 A1 WO2010057836 A1 WO 2010057836A1 EP 2009065176 W EP2009065176 W EP 2009065176W WO 2010057836 A1 WO2010057836 A1 WO 2010057836A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrode
- weight
- heating
- conductors
- heating conductor
- Prior art date
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 21
- 239000011248 coating agent Substances 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims description 10
- 239000004020 conductor Substances 0.000 claims abstract description 79
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 5
- 239000010432 diamond Substances 0.000 claims abstract description 5
- 238000010438 heat treatment Methods 0.000 claims description 99
- 239000007789 gas Substances 0.000 claims description 11
- 238000001816 cooling Methods 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 239000003870 refractory metal Substances 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/271—Diamond only using hot filaments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Definitions
- the invention relates to a device according to the preamble of claim 1 and a method using the device.
- Such a device is known from JP 01072992 A.
- the heating conductors are arranged horizontally above the substrate to be coated. To generate a suitable clamping force, the heating conductors are guided over a deflection device and provided at one end with a weight.
- the device known from the prior art has the disadvantage that the heating conductors break after only one or two coating operations and, as a result, become unusable. It is necessary in practice to replace the heating conductors after each coating operation. This requires a lot of time and money.
- relatively thick heating conductors with a diameter of about 2 mm.
- the use of such relatively thick heating element is also disadvantageous. Thick heating conductors, in contrast to thin heating conductors, generate a relatively large heat radiation, which undesirably acts on the substrates. Apart from that, a considerably higher electrical power is needed for heating thicker heating wires.
- the object of the invention is to eliminate the disadvantages of the prior art.
- a device is to be specified which enables multiple coating of substrates without replacement of the heating conductors.
- the electrical power used should be as low as possible.
- Another object of the invention is to provide a most efficient method for coating a substrate by means of CVD.
- the weight or the heating conductor is guided on the second electrode with the formation of an electrical sliding contact such that a vector of the weight force generated by the weight with a direction of the longitudinal extent of the heating element an angle of at most 45 ° forms. - Surprisingly, it also succeeds in drastically increasing their durability even when using thin heating conductors.
- thermally induced change in length of the heating conductor during heating and cooling can be compensated.
- the weight force generated by the weight acts according to the invention substantially in the direction of the longitudinal extent of the heating element. Ie. the tension caused by the weight is not exerted on the heat conductor over a strong bend.
- the alignment of the weight force with the direction of the longitudinal extent of the heating conductor contributes significantly to its improved durability.
- the device according to the invention ensures that the heating conductors are always kept taut and exact, in particular exactly parallel. Even after a large number of operating cycles, the heating conductors do not sag. Their distance to the coating substrate can can always be kept reproducibly constant over a large number of coating processes.
- a contact force which forces the heat conductor or the weight against the second electrode is caused by the weight. This can be achieved in a particularly simple manner by the direction of the longitudinal extension of the heating conductors is slightly adjusted with the second electrode against the vertical direction. In this case, a vector of the clamping force acting on the heating conductor stretched between the two electrodes is inclined on the vector of the weight force. The clamping force here forms the resultant of weight and contact force.
- the weight or the heating conductor are slidable on an inner wall of a recess provided on the second electrode.
- the recess may be, for example, a slot-like recess in which the heating conductor is guided.
- the recess has a substantially round cross-section. It can be embodied as a breakthrough provided in the second electrode. In this case, the heating element can be passed through the opening.
- the weight is cylindrical.
- an outer diameter of the weight is smaller than an inner diameter of the recess. Then, for example, the weight can also be guided in the recess.
- the vector of the weight force expediently forms an angle of 5 to 35 °, preferably 10 to 20 °, with the direction of the longitudinal extension of the heating conductor.
- two adjacent heating conductors are formed from a single wire, which bends in the region of the first electrode and is provided in the region of the second electrode at its two ends, each with a weight.
- the wire can be passed through two adjacent further openings at the first electrode.
- the two ends of the wire can then be performed by, for example, provided at the second electrode openings and be provided at the projecting beyond the second electrode ends each with a weight.
- slot-like recesses may be provided instead of the aforementioned openings.
- the heating conductors are made of a refractory metal, preferably of W, Ta, Mo, Rh or an alloy thereof.
- the proposed materials are suitable for producing particularly thin wires and on the other hand can be exposed to high thermal stresses.
- the heating conductors are expediently wires having a diameter in the range of 5 microns to 500 microns, preferably in the range of 100 microns to 300 microns.
- the required electrical power for coating a substrate can be significantly reduced.
- a high temperature of the heating conductor, whereby the formation of atomic hydrogen is supported.
- the heating conductors do not necessarily have to be designed in the form of wires. It may also be that these are bands, rods or sheets. A diameter or cross-sectional area of the heating conductors need not be the same over their entire length.
- a holding device for fastening the other end of the heating element is provided on the first electrode.
- This may expediently be a device for clamping attachment of the heating element.
- the holding device can in particular be designed such that an attachment of the heating conductors without substantial bending of the same is possible.
- the first electrode is advantageously arranged above the second electrode.
- the heating conductors extend substantially vertically between the first and second electrodes. You may be slightly inclined with respect to the vertical direction. An inclination angle with respect to the vertical direction is usually ⁇ 20 °.
- the first and / or second electrode is made of a dispersion-strengthened copper material.
- the proposed dispersion-strengthened copper material is extremely dimensionally stable even at high temperatures.
- workpieces in particular profiles or hollow profiles, can be extruded from such a material simply and inexpensively and subsequently processed.
- a cooling device is provided for cooling the first and / or second electrode.
- the first and / or second electrode may be formed, for example in the form of a hollow profile, which with a
- Cooling fluid is flowed through.
- the cooling fluid is expediently water.
- the heating element array is designed as a module.
- the first and second electrodes are fixed relative to one another, for example by means of laterally mounted supports, and form a structural unit.
- Such a unit is expediently designed so that it can be arranged in a conventional housing of a CVD coating device.
- a pressure in the range of about 0.1 to 400 mbar is set therein.
- the pressure during the generation of the reactive gas atmosphere is 1 to 400 mbar, preferably 3 to 20 mbar.
- the reactive gas atmosphere expediently contains 90 to 99.5% by weight of hydrogen.
- methane in a concentration of 0.5 to 10% by weight can be used as the carbon carrier.
- the reactive gas atmosphere may contain a gaseous silicon carrier instead of the gaseous carbon carrier.
- the reactive gas atmosphere may additionally contain nitrogen, oxygen, phosphorus or boron-containing gases.
- the heating conductors are advantageously heated to a temperature in the range of 1800 0 C to 2500 0 C, preferably 1900 ° C to 2300 0 C. Especially at the indicated high temperatures, graphite deposition on the heating conductors from the gas phase is avoided. This ensures that especially at high concentrations of the carbon support in the gas phase, the generation of atomic hydrogen is always maintained at the heating conductors. Cooling of the heating conductors to ambient temperature expediently takes place in a vacuum, ie not in the reactive gas atmosphere. After cooling the heating element to ambient temperature, the housing is ventilated. Subsequently, the coated substrates are removed.
- 1 is a schematic view of a first device
- FIG. 1 is a plan view of the weight of FIG. 1,
- FIG. 3 is a schematic view of a second device
- Fig. 4 is a plan view of the further weight of FIG.
- FIG. 5 is a detail view of FIG. 3,
- FIG. 6 is a schematic detail view of a third device
- FIG. 7 is a schematic view of a fourth device
- FIG. 9 is a schematic view of a fifth device and Fig. 10 is a schematic sectional view of a CVD coating apparatus.
- Fig. 1 shows a schematic view of a first device.
- a plurality of heating elements 2 are in a row next to each other, preferably with approximately the same distance, attached.
- the heating conductors 2 can be received in a clamping manner in holding devices 3, which are provided on the first electrode 1.
- the heating element 2 are kept individually stretched by provided at the end of weights 4.
- the cylindrically executed weights 4 are slidably guided in corresponding recesses 5, which are provided on a second electrode 6.
- the second electrode 6 is here below the first
- Electrode 1 in a running through the first electrode 1 vertical plane.
- the recesses 5 have a straight contact line or surface with respect to the weights 4 in the axial direction.
- the holding devices 3 on the first electrode 1 and the recesses 5 on the second electrode 6 are designed so that the heating conductors 2 are kept taut in a substantially parallel arrangement.
- FIG. 2 shows a top view of the weights 4 according to FIG. 1.
- the heating conductors 2 are mounted outside a center of gravity of the weights 4.
- the tilting moment is dimensioned such that an electrical sliding contact is formed between the second electrode 6 and the weights 4 or the heat conductors 2 attached thereto. Slip on a thermally induced change in the length of the heating element 2 the respective weights 4 rectilinearly along the inner surface of the respective recess 5.
- FIGS. 3 and 4 show a schematic view of a second device.
- the first 1 and second electrodes 6 are arranged in the same vertical plane.
- the recesses 5 provided on the second electrode 6 are arranged slightly horizontally offset from the holding devices 3 on the first electrode 1.
- the heating conductor 2 can be mounted centrally on the cylindrically shaped weights 4. Because of the staggered arrangement of the first 1 and the second electrode 6 acts on the weights 4 in turn a tilting moment, which causes the weights 4 in abutment with an inner wall of the recesses 5 mandatory contact force K.
- the contact force K is chosen so that a caused by thermal changes in length of the heating element 2 vertical movement of the weights 4 within the recess 5 at any time is possible and the heating element 2 are always kept taut.
- the weights 4 are moved in the case of a thermal change in length of the heating element 2 on the inner wall of the recesses 5 on a rectilinear contact line or surface.
- Such a rectilinear design of the contact surface between the weight 4 and the second electrode 6 contributes to particularly low friction losses.
- the heating element 2 can thus be kept taut at any time.
- FIG. 5 shows a detailed view according to FIG. 3. It can be seen from this that a vector of a clamping force S acting on the heating conductor 2 runs parallel to the direction of the longitudinal extension of the heating conductor 2. A vector of a weight force G generated by the weight 4, however, always runs vertically. With ⁇ , an angle between the longitudinal extent of the heating element 2 and the vector of the weight G is designated.
- the term "longitudinal extent” is understood to mean a direction which the heating conductor 2 describes from the first 1 to the second electrode 6.
- K denotes a vector of a contact force perpendicular to the vector of the weight G, with which the weight 4 is forced against the inner wall of the recess 5.
- the contact force K is dependent on the angle ⁇ and the weight G.
- the angle ⁇ is suitably selected in a range of 10 to 20 °.
- a movement of the weight 4 located in the sliding contact takes place in a straight line and parallel to the vector of the weight G.
- Fig. 6 shows a detail view of a third device.
- the vector of the contact force K is perpendicular to the vector of the clamping force S.
- the weight 4 is against the inner wall of the recess 5 forced, so that held by the weight 4, on the one hand, the heating element 2 taut and on the other hand, an electrical sliding contact is made.
- the weight 4 moves straight along the contact surface.
- Figs. 7 and 8 show a fourth device.
- the holding devices 3 on the first electrode 1 are in turn arranged offset relative to the corresponding recesses 5, so that the heating element 2 between the first electrode 1 and the second electrode 6 is not held vertically, but in a biased slightly different from the vertical direction oblique direction.
- the heating conductors 2 are led through the apertures 5 provided on the second electrode 6.
- the weights 4 are here each attached below the second electrode 6 at the free ends of the heating element 2.
- a contact line or area between the heating conductor 2 and the recess 5 is formed in a straight line here as well. This increases the durability of the heating element 2. At the same time a frictional resistance in the compensation of thermally induced changes in length of the heating element 2 is reduced.
- this arrangement results in a contact force K acting on the heating conductor 2 perpendicular to the weight G, which forces the heating conductor 2 against the inner wall of the opening 5.
- the electrical sliding contact is thus formed directly between the heating conductor 2 and the second electrode 6.
- Fig. 9 shows a schematic representation of a fifth device.
- the first electrode 1 is arranged above the second electrode 6, it is not arranged in the same vertical plane as the second electrode 6.
- the provided on the first electrode 1 holding means 3 are offset to the corresponding recesses 5 on the second electrode 6 so that the heating element 2 are not arranged in a vertical plane, but obliquely in space.
- a skew angle of the heating element 2 with respect to the vertical direction is expediently less than 45 °, preferably less than 30 °. Also in this case arises
- Fig. 10 shows a schematic view of a CVD coating apparatus.
- the first 1 and the second electrode 6 via supports 7 and with the interposition of electrical insulation means 8 are interconnected. Together with the heat conductors 2 attached thereto, they form a heating conductor array, which is accommodated in a gas-tight housing 9.
- a pump 10 is provided for evacuating the housing 9.
- a nozzle is designated by the optional reaction gas can be performed in the housing 9.
- the first 1 and second electrodes 6 are connected to a current source 12 for heating the heating conductors 2.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Toxicology (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/130,910 US9343337B2 (en) | 2008-11-24 | 2009-11-13 | Device and method for coating a substrate using CVD |
JP2011536835A JP5603340B2 (ja) | 2008-11-24 | 2009-11-13 | 化学気相成長法を用いて基板をコーティングするデバイス及び方法 |
EP09756153.4A EP2361322B1 (de) | 2008-11-24 | 2009-11-13 | Vorrichtung und verfahren zum beschichten eines substrats mittels cvd |
CN200980155316.5A CN102292466B (zh) | 2008-11-24 | 2009-11-13 | 利用cvd 涂覆基板的器件和方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008044028A DE102008044028A1 (de) | 2008-11-24 | 2008-11-24 | Vorrichtung und Verfahren zum Beschichten eines Substrats mittels CVD |
DE102008044028.0 | 2008-11-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2010057836A1 true WO2010057836A1 (de) | 2010-05-27 |
Family
ID=41611313
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2009/065176 WO2010057836A1 (de) | 2008-11-24 | 2009-11-13 | Vorrichtung und verfahren zum beschichten eines substrats mittels cvd |
Country Status (6)
Country | Link |
---|---|
US (1) | US9343337B2 (ja) |
EP (1) | EP2361322B1 (ja) |
JP (1) | JP5603340B2 (ja) |
CN (1) | CN102292466B (ja) |
DE (1) | DE102008044028A1 (ja) |
WO (1) | WO2010057836A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110287194A1 (en) * | 2008-11-24 | 2011-11-24 | Cemecon Ag | Device and method for coating a substrate using cvd |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008044025A1 (de) * | 2008-11-24 | 2010-08-05 | Cemecon Ag | Vorrichtung und Verfahren zum Beschichten eines Substrats mittels CVD |
CN110938810B (zh) * | 2019-12-27 | 2024-10-01 | 杭州睿清环保科技有限公司 | 一种用于热丝化学气相沉积制备大尺寸金刚石薄膜的热丝支架 |
CN113265643B (zh) * | 2021-05-13 | 2022-05-10 | 杭州超然金刚石有限公司 | 一种金刚石的加工设备 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0470447A1 (en) * | 1990-08-07 | 1992-02-12 | General Electric Company | CVD diamond for coating twist drills |
US5314570A (en) * | 1990-07-18 | 1994-05-24 | Sumitomo Electric Industries Ltd. | Process and apparatus for the production of diamond |
EP0714997A1 (en) * | 1994-11-30 | 1996-06-05 | Kodak-Pathe | Process for manufacturing layers of diamond doped with boron |
WO2002068709A1 (en) * | 2001-02-26 | 2002-09-06 | Precision Diamond Technologies Co., Ltd | A chemical vapor deposition process and apparatus thereof |
US6582780B1 (en) * | 1999-08-30 | 2003-06-24 | Si Diamond Technology, Inc. | Substrate support for use in a hot filament chemical vapor deposition chamber |
WO2008003275A1 (de) * | 2006-07-06 | 2008-01-10 | Ecka Granulate Velden Gmbh | Verfahren zur herstellung vonformteilen aus dispersionsverfestigten metalllegierungen |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1487436A (en) * | 1921-03-30 | 1924-03-18 | Standard Oil Company Inciana | Air-hose protector |
US1448480A (en) * | 1921-10-20 | 1923-03-13 | Lester D Bedell | Apparatus for operating furnace doors |
US2996806A (en) * | 1959-08-17 | 1961-08-22 | Zeiss Carl | Vertical length measuring device |
FR1402940A (fr) * | 1964-04-21 | 1965-06-18 | Fives Lille Cail | Perfectionnement aux transporteurs aériens à câbles |
JPS6472992A (en) | 1987-09-14 | 1989-03-17 | Sumitomo Electric Industries | Diamond synthesizing installation |
US4958592A (en) * | 1988-08-22 | 1990-09-25 | General Electric Company | Resistance heater for diamond production by CVD |
US4970986A (en) * | 1989-08-03 | 1990-11-20 | General Electric Company | Apparatus for synthetic diamond deposition including spring-tensioned filaments |
US4953499A (en) * | 1989-08-03 | 1990-09-04 | General Electric Company | Apparatus for synthetic diamond deposition including curved filaments and substrate cooling means |
JPH0421777A (ja) | 1990-05-14 | 1992-01-24 | Seiko Instr Inc | ダイヤモンドの合成装置 |
US5146481A (en) * | 1991-06-25 | 1992-09-08 | Diwakar Garg | Diamond membranes for X-ray lithography |
USH1249H (en) * | 1991-07-01 | 1993-11-02 | Machonkin Mary A | Coating processes with a polycrystalline diamond passivation layer |
US5391229A (en) * | 1993-07-26 | 1995-02-21 | General Electric Company | Apparatus for chemical vapor deposition of diamond including graphite substrate holders |
US5833753A (en) * | 1995-12-20 | 1998-11-10 | Sp 3, Inc. | Reactor having an array of heating filaments and a filament force regulator |
DE19701696C2 (de) * | 1997-01-20 | 1999-02-18 | Fraunhofer Ges Forschung | Vorrichtung und Verfahren zur Beschichtung eines Substrates mittels eines chemischen Gasphasenabscheideverfahrens |
US6214706B1 (en) * | 1998-08-28 | 2001-04-10 | Mv Systems, Inc. | Hot wire chemical vapor deposition method and apparatus using graphite hot rods |
US6432206B1 (en) * | 1999-08-30 | 2002-08-13 | Si Diamond Technology, Inc. | Heating element for use in a hot filament chemical vapor deposition chamber |
US6692574B1 (en) * | 1999-08-30 | 2004-02-17 | Si Diamond Technology, Inc. | Gas dispersion apparatus for use in a hot filament chemical vapor deposition chamber |
JP4710187B2 (ja) * | 2000-08-30 | 2011-06-29 | ソニー株式会社 | 多結晶シリコン層の成長方法および単結晶シリコン層のエピタキシャル成長方法 |
DE20019105U1 (de) * | 2000-11-12 | 2001-05-23 | Leica Microsystems Ag, Heerbrugg | Stativ |
JP3787816B2 (ja) * | 2002-10-04 | 2006-06-21 | キヤノンアネルバ株式会社 | 発熱体cvd装置 |
JP4843785B2 (ja) | 2006-02-28 | 2011-12-21 | 国立大学法人東北大学 | 気相ダイヤモンド膜のコーティング方法及び装置 |
TW200809000A (en) * | 2006-08-09 | 2008-02-16 | Kinik Co | Chemical vapor thin film deposition apparatus having vertical plating surface and power controlled heat wire |
TW200809924A (en) * | 2006-08-09 | 2008-02-16 | Kinik Co | Chemical vapor thin film deposition device |
US20100144122A1 (en) * | 2007-07-07 | 2010-06-10 | Xinmin Cao | Hybrid chemical vapor deposition process combining hot-wire cvd and plasma-enhanced cvd |
CN101280423B (zh) * | 2008-04-02 | 2010-04-21 | 中国工程物理研究院总体工程研究所 | 小孔径金刚石涂层拉丝模具制备方法 |
DE102008044028A1 (de) * | 2008-11-24 | 2010-08-12 | Cemecon Ag | Vorrichtung und Verfahren zum Beschichten eines Substrats mittels CVD |
-
2008
- 2008-11-24 DE DE102008044028A patent/DE102008044028A1/de not_active Ceased
-
2009
- 2009-11-13 EP EP09756153.4A patent/EP2361322B1/de active Active
- 2009-11-13 US US13/130,910 patent/US9343337B2/en active Active
- 2009-11-13 CN CN200980155316.5A patent/CN102292466B/zh active Active
- 2009-11-13 WO PCT/EP2009/065176 patent/WO2010057836A1/de active Application Filing
- 2009-11-13 JP JP2011536835A patent/JP5603340B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5314570A (en) * | 1990-07-18 | 1994-05-24 | Sumitomo Electric Industries Ltd. | Process and apparatus for the production of diamond |
EP0470447A1 (en) * | 1990-08-07 | 1992-02-12 | General Electric Company | CVD diamond for coating twist drills |
EP0714997A1 (en) * | 1994-11-30 | 1996-06-05 | Kodak-Pathe | Process for manufacturing layers of diamond doped with boron |
US6582780B1 (en) * | 1999-08-30 | 2003-06-24 | Si Diamond Technology, Inc. | Substrate support for use in a hot filament chemical vapor deposition chamber |
WO2002068709A1 (en) * | 2001-02-26 | 2002-09-06 | Precision Diamond Technologies Co., Ltd | A chemical vapor deposition process and apparatus thereof |
WO2008003275A1 (de) * | 2006-07-06 | 2008-01-10 | Ecka Granulate Velden Gmbh | Verfahren zur herstellung vonformteilen aus dispersionsverfestigten metalllegierungen |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110287194A1 (en) * | 2008-11-24 | 2011-11-24 | Cemecon Ag | Device and method for coating a substrate using cvd |
US9343337B2 (en) * | 2008-11-24 | 2016-05-17 | Diaccon Gmbh | Device and method for coating a substrate using CVD |
Also Published As
Publication number | Publication date |
---|---|
EP2361322A1 (de) | 2011-08-31 |
JP5603340B2 (ja) | 2014-10-08 |
CN102292466B (zh) | 2014-06-25 |
JP2012509825A (ja) | 2012-04-26 |
US20110287194A1 (en) | 2011-11-24 |
EP2361322B1 (de) | 2017-05-10 |
US9343337B2 (en) | 2016-05-17 |
CN102292466A (zh) | 2011-12-21 |
DE102008044028A1 (de) | 2010-08-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69009893T2 (de) | Vorrichtung zur Abscheidung von synthetischem Diamant, die unter Federdruck stehende Drähte enthält. | |
DE69127609T2 (de) | Vorrichtung und verfahren zur herstellung von diamanten | |
EP1223146B1 (de) | Vorrichtung und Verfahren zur Herstellung eines polykristallinen Siliciumstabes | |
DE69009915T2 (de) | Vorrichtung zur synthetischen Diamantherstellung mit gebogenen Filamenten und Substratkühlungseinrichtung. | |
DE60126576T2 (de) | Elektrostatische Spannvorrichtung und Verfahren zur Herstellung derselben | |
EP0432528B1 (de) | Verfahren zur Erzeugung von Schichten aus harten Kohlenstoffmodifikationen und Vorrichtung zur Durchführung des Verfahrens | |
CH664768A5 (de) | Verfahren zur beschichtung von substraten in einer vakuumkammer. | |
EP2361322B1 (de) | Vorrichtung und verfahren zum beschichten eines substrats mittels cvd | |
DE60319508T2 (de) | Verfahren und vorrichtung zur herstellung von kohlenstoffnanostrukturen | |
DE102010003069A1 (de) | Kegelförmige Graphitelektrode mit hochgezogenem Rand | |
DE102005031081A1 (de) | Bipolarplatte, Verfahren zur Herstellung einer Bipolarplatte und Brennstoffzellenblock-Anordnung | |
EP2359388B1 (de) | Vorrichtung und verfahren zum beschichten eines substrats mittels cvd | |
EP3523466B1 (de) | Vorrichtung und verfahren zum aufbringen einer kohlenstoffschicht | |
EP2438206B1 (de) | Beschichtungsanlage und -verfahren | |
DE19960790A1 (de) | Elektrode zum elektrochemischen Feinbohren von Werkstücken sowie Verfahren zu ihrer Herstellung | |
DE2839504C2 (de) | Elektronenstrahlerzeuger für eine Kathodenstrahlröhre | |
DE102013103575A1 (de) | Verfahren (varianten) und vorrichtung für die herstellung von silizium-trägerplatten | |
DE102020000902A1 (de) | Vorrichtung zum Produzieren von polykristallinem Silicium und polykristallines Silicium | |
WO2010139542A1 (de) | Beschichtungsanlage und beschichtungsverfahren | |
DE3208086C2 (de) | Verwendung einer Plasmakanone | |
DE102014117766B4 (de) | Substratkühlvorrichtung, Bandsubstratbehandlungsvorrichtung und Verwendung | |
DE19630134A1 (de) | Fügeverfahren für Elektronik- und Elektrotechnik-Baugruppen | |
DE174476C (ja) | ||
DE2223868B2 (de) | Verfahren und Vorrichtung zum Herstellen von aus Halbleitermaterial bestehenden Hohlkörpern, insbesondere von Siliciumrohren | |
DE102015121518A1 (de) | Verfahren und Anlage zur Herstellung von Beschichtungen auf Substraten sowie ein beschichtetes drahtförmiges Substrat |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200980155316.5 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 09756153 Country of ref document: EP Kind code of ref document: A1 |
|
DPE2 | Request for preliminary examination filed before expiration of 19th month from priority date (pct application filed from 20040101) | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2011536835 Country of ref document: JP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
REEP | Request for entry into the european phase |
Ref document number: 2009756153 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2009756153 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13130910 Country of ref document: US |