DE69009915T2 - Vorrichtung zur synthetischen Diamantherstellung mit gebogenen Filamenten und Substratkühlungseinrichtung. - Google Patents
Vorrichtung zur synthetischen Diamantherstellung mit gebogenen Filamenten und Substratkühlungseinrichtung.Info
- Publication number
- DE69009915T2 DE69009915T2 DE69009915T DE69009915T DE69009915T2 DE 69009915 T2 DE69009915 T2 DE 69009915T2 DE 69009915 T DE69009915 T DE 69009915T DE 69009915 T DE69009915 T DE 69009915T DE 69009915 T2 DE69009915 T2 DE 69009915T2
- Authority
- DE
- Germany
- Prior art keywords
- filaments
- substrates
- synthetic diamond
- substrate cooling
- diamond production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/271—Diamond only using hot filaments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/389,212 US4953499A (en) | 1989-08-03 | 1989-08-03 | Apparatus for synthetic diamond deposition including curved filaments and substrate cooling means |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69009915D1 DE69009915D1 (de) | 1994-07-21 |
DE69009915T2 true DE69009915T2 (de) | 1994-11-17 |
Family
ID=23537321
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69009915T Expired - Fee Related DE69009915T2 (de) | 1989-08-03 | 1990-07-23 | Vorrichtung zur synthetischen Diamantherstellung mit gebogenen Filamenten und Substratkühlungseinrichtung. |
Country Status (8)
Country | Link |
---|---|
US (1) | US4953499A (de) |
EP (1) | EP0417434B1 (de) |
JP (1) | JPH03115576A (de) |
KR (1) | KR910004296A (de) |
AT (1) | ATE107368T1 (de) |
DE (1) | DE69009915T2 (de) |
IE (1) | IE901920A1 (de) |
ZA (1) | ZA905696B (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011014204A1 (de) | 2011-03-17 | 2012-09-20 | Universität Rostock | Verfahren zur Synthese von Diamanten |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6413589B1 (en) | 1988-11-29 | 2002-07-02 | Chou H. Li | Ceramic coating method |
US5314570A (en) * | 1990-07-18 | 1994-05-24 | Sumitomo Electric Industries Ltd. | Process and apparatus for the production of diamond |
US5256206A (en) * | 1990-08-07 | 1993-10-26 | General Electric Company | CVD diamond for coating twist drills |
US5096736A (en) * | 1990-08-07 | 1992-03-17 | General Electric Company | Cvd diamond for coating twist drills |
ATE134223T1 (de) * | 1990-12-24 | 1996-02-15 | Gen Electric | Verkleidung aus metall zur steigerung der wachstumsgeschwindigkeit beim aufdampfen von diamant mittels cvd |
US5145712A (en) * | 1991-02-08 | 1992-09-08 | Center For Innovative Technology | Chemical deposition of diamond |
US5429069A (en) * | 1991-07-11 | 1995-07-04 | Fang; Pao-Hsien | Method for growing diamond crystals utilizing a diffusion fed epitaxy |
US5240749A (en) * | 1991-08-27 | 1993-08-31 | University Of Central Florida | Method for growing a diamond thin film on a substrate by plasma enhanced chemical vapor deposition |
GB9123331D0 (en) * | 1991-11-04 | 1991-12-18 | De Beers Ind Diamond | Apparatus for depositing a material on a substrate by chemical vapour deposition |
US5479874A (en) * | 1993-09-29 | 1996-01-02 | General Electric Company | CVD diamond production using preheating |
US5397396A (en) * | 1993-12-27 | 1995-03-14 | General Electric Company | Apparatus for chemical vapor deposition of diamond including thermal spreader |
US5424096A (en) * | 1994-02-14 | 1995-06-13 | General Electric Company | HF-CVD method for forming diamond |
US5833753A (en) * | 1995-12-20 | 1998-11-10 | Sp 3, Inc. | Reactor having an array of heating filaments and a filament force regulator |
US5776553A (en) * | 1996-02-23 | 1998-07-07 | Saint Gobain/Norton Industrial Ceramics Corp. | Method for depositing diamond films by dielectric barrier discharge |
US6082294A (en) * | 1996-06-07 | 2000-07-04 | Saint-Gobain Industrial Ceramics, Inc. | Method and apparatus for depositing diamond film |
DE19701696C2 (de) * | 1997-01-20 | 1999-02-18 | Fraunhofer Ges Forschung | Vorrichtung und Verfahren zur Beschichtung eines Substrates mittels eines chemischen Gasphasenabscheideverfahrens |
US6286206B1 (en) | 1997-02-25 | 2001-09-11 | Chou H. Li | Heat-resistant electronic systems and circuit boards |
US5937514A (en) | 1997-02-25 | 1999-08-17 | Li; Chou H. | Method of making a heat-resistant system |
US6976904B2 (en) * | 1998-07-09 | 2005-12-20 | Li Family Holdings, Ltd. | Chemical mechanical polishing slurry |
US6676492B2 (en) | 1998-12-15 | 2004-01-13 | Chou H. Li | Chemical mechanical polishing |
US6458017B1 (en) | 1998-12-15 | 2002-10-01 | Chou H. Li | Planarizing method |
US6692574B1 (en) * | 1999-08-30 | 2004-02-17 | Si Diamond Technology, Inc. | Gas dispersion apparatus for use in a hot filament chemical vapor deposition chamber |
JP2005179744A (ja) * | 2003-12-19 | 2005-07-07 | Toshiba Corp | 触媒cvd装置及び触媒cvd法 |
US20090017258A1 (en) * | 2007-07-10 | 2009-01-15 | Carlisle John A | Diamond film deposition |
DE102008044028A1 (de) * | 2008-11-24 | 2010-08-12 | Cemecon Ag | Vorrichtung und Verfahren zum Beschichten eines Substrats mittels CVD |
US8852347B2 (en) * | 2010-06-11 | 2014-10-07 | Tokyo Electron Limited | Apparatus for chemical vapor deposition control |
CN112323046B (zh) * | 2020-08-31 | 2023-02-21 | 广东鼎泰机器人科技有限公司 | 一种涂层机的真空加热装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4593644A (en) * | 1983-10-26 | 1986-06-10 | Rca Corporation | Continuous in-line deposition system |
US4859490A (en) * | 1986-07-23 | 1989-08-22 | Sumitomo Electric Industries, Ltd. | Method for synthesizing diamond |
US4816291A (en) * | 1987-08-19 | 1989-03-28 | The Regents Of The University Of California | Process for making diamond, doped diamond, diamond-cubic boron nitride composite films |
US4958592A (en) * | 1988-08-22 | 1990-09-25 | General Electric Company | Resistance heater for diamond production by CVD |
-
1989
- 1989-08-03 US US07/389,212 patent/US4953499A/en not_active Expired - Fee Related
-
1990
- 1990-05-29 IE IE192090A patent/IE901920A1/en unknown
- 1990-07-19 ZA ZA905696A patent/ZA905696B/xx unknown
- 1990-07-23 EP EP90114049A patent/EP0417434B1/de not_active Expired - Lifetime
- 1990-07-23 DE DE69009915T patent/DE69009915T2/de not_active Expired - Fee Related
- 1990-07-23 AT AT90114049T patent/ATE107368T1/de not_active IP Right Cessation
- 1990-08-02 KR KR1019900011874A patent/KR910004296A/ko not_active Application Discontinuation
- 1990-08-03 JP JP2205338A patent/JPH03115576A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011014204A1 (de) | 2011-03-17 | 2012-09-20 | Universität Rostock | Verfahren zur Synthese von Diamanten |
DE102011014204B4 (de) | 2011-03-17 | 2022-04-07 | Universität Rostock | Verfahren zur Synthese von Diamanten |
Also Published As
Publication number | Publication date |
---|---|
KR910004296A (ko) | 1991-03-28 |
ZA905696B (en) | 1991-07-31 |
IE901920A1 (en) | 1991-02-13 |
EP0417434A1 (de) | 1991-03-20 |
US4953499A (en) | 1990-09-04 |
ATE107368T1 (de) | 1994-07-15 |
EP0417434B1 (de) | 1994-06-15 |
JPH03115576A (ja) | 1991-05-16 |
DE69009915D1 (de) | 1994-07-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |