KR910004296A - 만곡 필라멘트 및 기판 냉각 수단을 포함하는 합성 다이어몬드 도포 장치 - Google Patents

만곡 필라멘트 및 기판 냉각 수단을 포함하는 합성 다이어몬드 도포 장치 Download PDF

Info

Publication number
KR910004296A
KR910004296A KR1019900011874A KR900011874A KR910004296A KR 910004296 A KR910004296 A KR 910004296A KR 1019900011874 A KR1019900011874 A KR 1019900011874A KR 900011874 A KR900011874 A KR 900011874A KR 910004296 A KR910004296 A KR 910004296A
Authority
KR
South Korea
Prior art keywords
substrate
filaments
diamond coating
pair
diamond
Prior art date
Application number
KR1019900011874A
Other languages
English (en)
Inventor
리챠드 안토니 토사스
챨스 디브리즈 로버트
앨런 잉글러 리챠드
헬무트 에팅거 로버트
폴턴 플라이 쉬어 제임스
Original Assignee
아더 엠. 킹
제너럴 일렉트릭 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아더 엠. 킹, 제너럴 일렉트릭 캄파니 filed Critical 아더 엠. 킹
Publication of KR910004296A publication Critical patent/KR910004296A/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/271—Diamond only using hot filaments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

내용 없음.

Description

만곡 필라멘트 및 기판 냉각 수단을 포함하는 합성 다이어몬드 도포 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 장치의 개략적인 측면도,
제2도는 제1도의 2-2선을 취한 상기 장치의 단면도,
제3도는 제2도의 3-3을 취한 단면도.

Claims (6)

  1. 화학 증착에 의해 기판상에 다이어몬드의 도포를 위한 장치로서, 대기압이하의 압력으로 유지되고 적어도 하나의 유입구수단과 거어도 하나의 배출구 수단을 가진 폐쇄된 반응실과, 상기 기판들사이에 가스유동을 허용하기 위하여 이격되고 서로에 대하여 평행한 상기 반응실 내에 상기 기판을 지지하기 위한 지지 수단과, 한쌍의 고정 전극의 각 단부에서 부착고정 되고 상기 기판에 평행하고 실제적으로 동일한 거리에 있는 단일 평면내에서 만곡되도록 압축응력을 받는 수직으로 연장된 직선의 전도성의 복수의 필라멘트를 구비한 저항가열 수단과, 상기 필라멘트로 부터 대향 측면상의 상기 한기판에 인접하게 위치한 기판 냉각 수단을 구비한 다이어몬드 도포장치.
  2. 제1항에 있어서, 각각의 상기 기판의 상기 필라멘트로부터 대향 측면상의 한쌍의 기판 냉각 수단을 포함한 다이어몬드 도포장치.
    제2항에 있어서, 필라멘트가 텅스텐을 구비한 다이어몬드 도포장치.
  3. 제2항에 있어서, 필라멘트가 텅스텐을 구비한 다이어몬드 도포장치.
  4. 제3항에 있어서, 기판 냉각 수단을 냉각 수의 통로를 위한 설비를 가지 구리를 구비한 다이어몬드 도포장치.
  5. 제3항에 있어서, 기판으로부터 기판 냉각 수단까지의 거리를 조정하기 위한 수단을 구비한 다이어몬드 도포장치.
  6. 화학증착에 의해 한쌍의 평면 수직 기판상에 다이어몬드의 도포를 하기 위한 장치로서, 대기압이하의 압력으로 유지되고 적어도 하나의 유입구 수단과 적어도 하나의 배출구 수단을 가진 폐쇄된 반응실과, 상기 반응실내에 상기 기판을 지지하기 위한지지 수단과, 한쌍의 고정된 전극의 각 단부에 고정되고 상기 기판에 평행하고 실제적으로 동일 거리에 있는 단일 평면내에서 만곡되도록 압축 응력을 받는 상기 기판으로부터 실제적으로 동일한 거리에 위치된 수직으로 연장된 복수의 직선 텅스텐 필라멘트를 구비한 저항가열수단과, 냉각수의 통과를 위한 설비를 가진 구리를 구비하고 상기필라멘트로부터 대향 측면상의 상기 기판에 인접하게 위치한 한쌍의 제거 가능한 히트 싱크를 구비한 것을 특징으로 하는 다이어몬드 도포장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900011874A 1989-08-03 1990-08-02 만곡 필라멘트 및 기판 냉각 수단을 포함하는 합성 다이어몬드 도포 장치 KR910004296A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US389,212 1989-08-03
US07/389,212 US4953499A (en) 1989-08-03 1989-08-03 Apparatus for synthetic diamond deposition including curved filaments and substrate cooling means

Publications (1)

Publication Number Publication Date
KR910004296A true KR910004296A (ko) 1991-03-28

Family

ID=23537321

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900011874A KR910004296A (ko) 1989-08-03 1990-08-02 만곡 필라멘트 및 기판 냉각 수단을 포함하는 합성 다이어몬드 도포 장치

Country Status (8)

Country Link
US (1) US4953499A (ko)
EP (1) EP0417434B1 (ko)
JP (1) JPH03115576A (ko)
KR (1) KR910004296A (ko)
AT (1) ATE107368T1 (ko)
DE (1) DE69009915T2 (ko)
IE (1) IE901920A1 (ko)
ZA (1) ZA905696B (ko)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6413589B1 (en) 1988-11-29 2002-07-02 Chou H. Li Ceramic coating method
EP0493609B1 (en) * 1990-07-18 1997-09-10 Sumitomo Electric Industries, Ltd. Method and device for manufacturing diamond
US5256206A (en) * 1990-08-07 1993-10-26 General Electric Company CVD diamond for coating twist drills
US5096736A (en) * 1990-08-07 1992-03-17 General Electric Company Cvd diamond for coating twist drills
DE69117159T2 (de) * 1990-12-24 1996-08-29 Gen Electric Verkleidung aus Metall zur Steigerung der Wachstumsgeschwindigkeit beim Aufdampfen von Diamant mittels CVD
US5145712A (en) * 1991-02-08 1992-09-08 Center For Innovative Technology Chemical deposition of diamond
US5429069A (en) * 1991-07-11 1995-07-04 Fang; Pao-Hsien Method for growing diamond crystals utilizing a diffusion fed epitaxy
US5240749A (en) * 1991-08-27 1993-08-31 University Of Central Florida Method for growing a diamond thin film on a substrate by plasma enhanced chemical vapor deposition
GB9123331D0 (en) * 1991-11-04 1991-12-18 De Beers Ind Diamond Apparatus for depositing a material on a substrate by chemical vapour deposition
US5479874A (en) * 1993-09-29 1996-01-02 General Electric Company CVD diamond production using preheating
US5397396A (en) * 1993-12-27 1995-03-14 General Electric Company Apparatus for chemical vapor deposition of diamond including thermal spreader
US5424096A (en) * 1994-02-14 1995-06-13 General Electric Company HF-CVD method for forming diamond
US5833753A (en) * 1995-12-20 1998-11-10 Sp 3, Inc. Reactor having an array of heating filaments and a filament force regulator
US5776553A (en) * 1996-02-23 1998-07-07 Saint Gobain/Norton Industrial Ceramics Corp. Method for depositing diamond films by dielectric barrier discharge
US6082294A (en) * 1996-06-07 2000-07-04 Saint-Gobain Industrial Ceramics, Inc. Method and apparatus for depositing diamond film
DE19701696C2 (de) * 1997-01-20 1999-02-18 Fraunhofer Ges Forschung Vorrichtung und Verfahren zur Beschichtung eines Substrates mittels eines chemischen Gasphasenabscheideverfahrens
US5937514A (en) 1997-02-25 1999-08-17 Li; Chou H. Method of making a heat-resistant system
US6286206B1 (en) 1997-02-25 2001-09-11 Chou H. Li Heat-resistant electronic systems and circuit boards
US6976904B2 (en) * 1998-07-09 2005-12-20 Li Family Holdings, Ltd. Chemical mechanical polishing slurry
US6458017B1 (en) 1998-12-15 2002-10-01 Chou H. Li Planarizing method
US6676492B2 (en) 1998-12-15 2004-01-13 Chou H. Li Chemical mechanical polishing
US6692574B1 (en) * 1999-08-30 2004-02-17 Si Diamond Technology, Inc. Gas dispersion apparatus for use in a hot filament chemical vapor deposition chamber
JP2005179744A (ja) * 2003-12-19 2005-07-07 Toshiba Corp 触媒ｃｖｄ装置及び触媒ｃｖｄ法
US20090017258A1 (en) * 2007-07-10 2009-01-15 Carlisle John A Diamond film deposition
DE102008044028A1 (de) * 2008-11-24 2010-08-12 Cemecon Ag Vorrichtung und Verfahren zum Beschichten eines Substrats mittels CVD
US8852347B2 (en) * 2010-06-11 2014-10-07 Tokyo Electron Limited Apparatus for chemical vapor deposition control
DE102011014204B4 (de) 2011-03-17 2022-04-07 Universität Rostock Verfahren zur Synthese von Diamanten
CN112323046B (zh) * 2020-08-31 2023-02-21 广东鼎泰机器人科技有限公司 一种涂层机的真空加热装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4593644A (en) * 1983-10-26 1986-06-10 Rca Corporation Continuous in-line deposition system
US4859490A (en) * 1986-07-23 1989-08-22 Sumitomo Electric Industries, Ltd. Method for synthesizing diamond
US4816291A (en) * 1987-08-19 1989-03-28 The Regents Of The University Of California Process for making diamond, doped diamond, diamond-cubic boron nitride composite films
US4958592A (en) * 1988-08-22 1990-09-25 General Electric Company Resistance heater for diamond production by CVD

Also Published As

Publication number Publication date
ATE107368T1 (de) 1994-07-15
DE69009915T2 (de) 1994-11-17
DE69009915D1 (de) 1994-07-21
EP0417434A1 (en) 1991-03-20
ZA905696B (en) 1991-07-31
IE901920A1 (en) 1991-02-13
EP0417434B1 (en) 1994-06-15
JPH03115576A (ja) 1991-05-16
US4953499A (en) 1990-09-04

Similar Documents

Publication Publication Date Title
KR910004296A (ko) 만곡 필라멘트 및 기판 냉각 수단을 포함하는 합성 다이어몬드 도포 장치
KR910004297A (ko) 스프링 인장된 필라멘트를 포함하는 합성 다이어몬드 도포 장치
KR0160510B1 (ko) 다구역 평면 히이터 어셈블리 및 그의 운전 방법
KR20210005515A (ko) 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
KR900003428A (ko) Cvd에 의한 다이어먼드 생산용 저항 가열기
US5397396A (en) Apparatus for chemical vapor deposition of diamond including thermal spreader
JPH05339733A (ja) 化学蒸着によって基体に物質を付着させる方法および装置
KR920004614A (ko) 트위스트 드릴 피복용 cvd 다이아몬드
JPH10280150A (ja) 被処理基板の処理装置
KR950032730A (ko) 다이아몬드 화학 증착 장치 및 방법
KR970701804A (ko) 액체 소스로부터 발생된 화학 증기의 통합 전송 시스템에서의 개선된 모듈(animproved module in an integrated delivery system for chemical vapors from liquid sources)
CN112899642B (zh) 一种大沉积区域金刚石薄膜制备用热丝架
MX171806B (es) Viga distribuidora con control de temperatura para el deposito de vapor quimico
KR100322411B1 (ko) 액체원료 기화장치
KR930018062A (ko) 화학증착 다이아몬드 반응기용 예비가열장치
KR960026481A (ko) 고압산화 및 저압 화학기상증착용 다중공정 반도체 제조장치
KR100237828B1 (ko) 고순도의 가스 고온가열장치
KR100257737B1 (ko) 반도체웨이퍼 증착장비의 샤워헤드
JPH01502183A (ja) ガラス被覆装置
JPH09306860A (ja) 熱処理炉
KR960026137A (ko) 플라즈마가 적용된 저압 화학 증기 증착장치
KR200163644Y1 (ko) 화학기상증착장치
JP2000074486A (ja) 流体加熱装置およびそれを用いた基板処理装置
JPS6050919A (ja) 気相成長装置
JPS5789218A (en) Liquid phase growing device of crystal

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application