JPS6428296A - Synthesis of diamond in vapor phase - Google Patents
Synthesis of diamond in vapor phaseInfo
- Publication number
- JPS6428296A JPS6428296A JP18122487A JP18122487A JPS6428296A JP S6428296 A JPS6428296 A JP S6428296A JP 18122487 A JP18122487 A JP 18122487A JP 18122487 A JP18122487 A JP 18122487A JP S6428296 A JPS6428296 A JP S6428296A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- diamond
- wire
- slit
- heater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To effect the deposition of uniform diamond on a stably and efficiently heated substrate in high rate of deposition using a vapor process, by using a substrate table composed of a molded article of hexagonal BN having built-in heater and heating the substrate on the table. CONSTITUTION:A molded article of hexagonal BN is processed in the form of e.g. a plate of 3-30mm thick. A slit 2 is formed at the middle of the thickness and a heater 3 such as nichrome wire, alumel wire, chromel wire or tungsten wire having a prescribed form is inserted into the slit. A lead wire is extended through the plate at a part opposite to the slit 2 and a thermocouple 4 for determining the substrate temperature is attached to the plate to obtain a substrate table 1. A substrate 5 such as a silicon wafer is placed on the table and heated at 500-1,000 deg.C with the heater 3. A diamond-forming gas produced by the thermal decomposition of an organic compound such as CH4, C2H6 or methanol is optionally mixed with H2 gas and the gas is excited with microwave, etc., to deposit a diamond on the substrate 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18122487A JPS6428296A (en) | 1987-07-22 | 1987-07-22 | Synthesis of diamond in vapor phase |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18122487A JPS6428296A (en) | 1987-07-22 | 1987-07-22 | Synthesis of diamond in vapor phase |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6428296A true JPS6428296A (en) | 1989-01-30 |
Family
ID=16096982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18122487A Pending JPS6428296A (en) | 1987-07-22 | 1987-07-22 | Synthesis of diamond in vapor phase |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6428296A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU614605B2 (en) * | 1988-04-28 | 1991-09-05 | De Beers Industrial Diamond Division (Proprietary) Limited | Diamond growth |
-
1987
- 1987-07-22 JP JP18122487A patent/JPS6428296A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU614605B2 (en) * | 1988-04-28 | 1991-09-05 | De Beers Industrial Diamond Division (Proprietary) Limited | Diamond growth |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2002084710A3 (en) | Systems and methods for epitaxially depositing films | |
| CA2312790A1 (en) | Growth of very uniform silicon carbide epitaxial layers | |
| DE69105537D1 (en) | Polycrystalline CVD diamond substrate for epitaxial growth of single crystal semiconductors. | |
| GB940236A (en) | Improvements in or relating to layers of semiconductor material | |
| JP2001023759A (en) | Pyrolytic boron nitride radiation heater | |
| CN105648425B (en) | A kind of chemical vapor deposition unit and its temperature control method | |
| US5225245A (en) | Chemical vapor deposition method for forming thin film | |
| JPS6428296A (en) | Synthesis of diamond in vapor phase | |
| GB1105870A (en) | Manufacture of silicon carbide ribbons | |
| US3304908A (en) | Epitaxial reactor including mask-work support | |
| GB1136881A (en) | Vapour growth of silicon crystals and apparatus for producing the same | |
| JPH069187B2 (en) | Sample heating device, atmospheric pressure CVD device and reduced pressure CVD device | |
| US5479874A (en) | CVD diamond production using preheating | |
| GB1124328A (en) | Improvements in or relating to the epitaxial deposition of crystalline layers | |
| GB1378302A (en) | Production of semiconductor rods | |
| JPS5629337A (en) | Formation of silicon nitride film | |
| JPS6447850A (en) | Manufacture of thermoelement | |
| FR2114105A5 (en) | Epitaxial radiation heated reactor - including a quartz reaction chamber | |
| EP0561511A2 (en) | Preheater for CVD diamond reactor | |
| Muhsin | Chemical vapor deposition of aluminum oxide (Al2O3) and beta iron disilicide (β-FeSi2) thin films | |
| Ohashi et al. | GaCl molecular beam cell for surface dynamics studies | |
| JPH06115913A (en) | Synthesis of boron carbonitride | |
| KR980011761A (en) | Semiconductor device manufacturing apparatus | |
| JPS57120335A (en) | Manufacture of semiconductor device | |
| US3585241A (en) | High yield synthesis of the smaller closo-carboranes,1,5c2b3h5,1,6-c2b4h6 and 2,4-c2b5h7 |