WO2010050318A1 - Substrat électroconducteur transparent, procédé de fabrication d'un substrat électroconducteur transparent, et élément d'affichage électrochimique - Google Patents

Substrat électroconducteur transparent, procédé de fabrication d'un substrat électroconducteur transparent, et élément d'affichage électrochimique Download PDF

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WO2010050318A1
WO2010050318A1 PCT/JP2009/066501 JP2009066501W WO2010050318A1 WO 2010050318 A1 WO2010050318 A1 WO 2010050318A1 JP 2009066501 W JP2009066501 W JP 2009066501W WO 2010050318 A1 WO2010050318 A1 WO 2010050318A1
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transparent conductive
conductive substrate
intermediate layer
transparent
substrate
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PCT/JP2009/066501
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English (en)
Japanese (ja)
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真和 岡田
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コニカミノルタホールディングス株式会社
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/153—Constructional details
    • G02F1/1533—Constructional details structural features not otherwise provided for
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/153—Constructional details
    • G02F1/155—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F2001/164—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect the electrolyte is made of polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details

Definitions

  • the present invention relates to a transparent conductive substrate, a method for producing a transparent conductive substrate, and an electrochemical display element.
  • a plating method is known in addition to the vacuum film forming method used in Patent Document 1 (see, for example, Patent Document 2 and Patent Document 3). .
  • an element having a structure in which a transparent conductive substrate having such a defect in a transparent conductive film and a metal electrode film partially exposed is in direct contact with an electrolyte, such as an electrochemical element or a dye-sensitized solar cell
  • an electrolyte such as an electrochemical element or a dye-sensitized solar cell
  • the present invention has been made in view of the above-mentioned problems, and provides a transparent conductive substrate having excellent characteristics that has both high transmittance and low resistance, a method for producing the transparent conductive substrate, and an electrochemical display element. Objective.
  • a method for producing a transparent conductive substrate comprising:
  • the metal oxide-based material is one selected from tin-doped indium oxide, fluorine-doped tin oxide, aluminum-doped zinc oxide, aluminum-doped tin oxide, and indium-doped zinc oxide.
  • An electrochemical display element comprising: an electrode substrate facing the transparent conductive substrate with an electrolyte interposed therebetween, and an electrode film formed on the surface of the substrate.
  • transparent indicates that the transmittance in the visible light region (wavelength 400 nm to 700 nm) is 50% or more.
  • FIG. 1 (a1), FIG. 1 (b), FIG. 1 (c1), and FIG. 1 (d1) are schematic cross-sectional views showing an example of the manufacturing process of the transparent conductive substrate 2
  • FIG. 1 (a2) is FIG.
  • FIG. 1C2 and FIG. 1D2 are schematic cross-sectional views showing another example of the manufacturing process of the transparent conductive substrate 2.
  • a metal electrode film is formed on the entire surface of the transparent substrate using a film formation method such as a sputtering method, and then a pattern is formed using a photolithography method.
  • Various formation methods such as a method in which a metal material is plated and grown in a region where a resist is not formed after the negative pattern is formed can be used.
  • the manufacturing process of the transparent conductive substrate 2 which employs a method of plating and growing a metal material using a resist pattern made of a resin-based resist material will be described.
  • a direct patterning method such as a screen printing method, a flexographic printing method, and an ink jet method can be used.
  • a pattern may be formed by using a photolithography method.
  • the pattern shape of the transparent insulating film 202 is not limited to a rectangle, but may be a polygon, a circle, or an ellipse.
  • a metal electrode film 203 is formed by an electroless plating method on an exposed portion of the transparent substrate 201 on which the transparent insulating film 202 is not formed.
  • the material of the metal electrode film 203 a material capable of forming a thick film with an electrical resistivity of less than 10 ⁇ 5 ⁇ cm is suitable. Specifically, gold, silver, copper, aluminum, nickel, alloys mainly composed of these, and the like are preferable.
  • the thickness of the metal electrode film 203 is preferably in the range of 100 nm to 3000 nm from the viewpoint of low resistance and productivity.
  • the intermediate layer 205 is formed.
  • the intermediate layer 205 may be formed on the entire surface of the transparent substrate 201 on which the transparent insulating film 202 and the metal electrode film 203 are formed as shown in FIG. 1 (c1), or as shown in FIG. 1 (c2). Alternatively, it may be formed only on the metal electrode film 203.
  • a coating method using a solution for example, a slit coating or an ink jet method is effective when the main purpose is to reduce the level difference of the irregularities on the surface of the metal electrode film 203.
  • vacuum evaporation is also effective for the purpose of reducing the local battery effect.
  • a conductive polymer As the material of the intermediate layer 205, when it is formed on the entire surface as shown in FIG. 1 (c1), a conductive polymer, a nanoparticle dispersion solution, or the like can be used.
  • the conductive polymer polythiophene, polyaniline, polypyrrole, a complex of polyethylenedioxythiophene and polyethylenesulfonic acid is suitable.
  • the nanoparticle dispersion solution include tin-doped indium oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), aluminum-doped tin oxide (ATO), and indium-doped zinc oxide (IZO).
  • Examples thereof include metal fine particle-dispersed ink in which a metal oxide material is finely divided and dispersed in an organic solvent.
  • a dispersant may be added to prevent aggregation between fine particles, and acrylic resin, urethane resin, epoxy resin or the like is added to 5% or less in order to improve adhesion. You may mix in the quantity.
  • the electrical resistance of the intermediate layer 205 is desirably 10 k ⁇ / ⁇ or less.
  • the thickness of the intermediate layer 205 is preferably 10 nm to 1000 nm, and is formed so as to ensure a transmittance of 50% or more.
  • the metal electrode film 203 when an aluminum system is used as the material of the metal electrode film 203, the aluminum based metal effect due to the local battery effect generated between the ITO and the wet process in the subsequent process such as a paneling process is obtained. Corrosion can be suppressed.
  • the nanoparticle dispersion solution when the nanoparticle dispersion solution is used, a metal material that corrodes due to the oxidizing action of the conductive polymer when the conductive polymer is used can also be used as the material of the metal electrode film 203.
  • the material of the intermediate layer 205 when formed only on the metal electrode film 203 is not as low as the metal electrode film 203 (10 ⁇ 5 ⁇ cm to 10 ⁇ 4).
  • a material excellent in ( ⁇ cm) film formability, workability (when etching is performed), and corrosion resistance, chromium, tantalum, titanium, manganese, molybdenum, and palladium are preferable.
  • the same material as that shown in FIG. 1 (c1) may be used.
  • a metal oxide-based transparent conductive film 204 such as tin-doped indium oxide (ITO), fluorine-doped tin oxide (FTO), or aluminum-doped zinc oxide (AZO) is formed by sputtering.
  • ITO tin-doped indium oxide
  • FTO fluorine-doped tin oxide
  • AZO aluminum-doped zinc oxide
  • the transparent conductive film 204 As a material for the transparent conductive film 204, a transparent material having an electrical resistivity of 10 ⁇ 5 ⁇ cm to 10 ⁇ 4 ⁇ cm is preferable, and a metal formed by a vacuum film forming method such as a sputtering method or a vacuum evaporation method. An oxide-based material is used.
  • the film thickness of the transparent conductive film 204 is preferably 30 nm to 300 nm.
  • FIG. 2 is a schematic cross-sectional view showing the configuration of the electrochemical display element 1.
  • the main part of the electrochemical display element 1 includes a transparent conductive substrate 2, an electrode substrate 3, a scattering layer 5, an electrolyte 6, and the like.
  • the electrode substrate 3 includes a substrate 301, an electrode film 303 formed on the surface of the substrate 301, and the like.
  • the electrochemical display element 1 includes a transparent conductive substrate 2 on the observation side and an electrode substrate 3 on the non-observation side, and the transparent conductive film 204 of the transparent conductive substrate 2 and the electrode film 303 of the electrode substrate 3 face each other.
  • a scattering layer 5 is provided on the electrode substrate 3.
  • an electrochromic dye and an electrolyte 6 are filled between the transparent conductive film 204 and the electrode film 303.
  • silver or silver is contained in the chemical structure.
  • An electrolyte 6 containing a compound is filled.
  • the electrolyte 6 may be provided with a layer in which fine particles such as TiO 2 are mixed or the fine particles are made porous using a binder such as a water-soluble polymer.
  • the transparent conductive substrate 2 described above As the non-observation side substrate 301, a substrate in which a transparent conductive film or a metal electrode film is formed on the surface of a transparent substrate such as glass or PET can be used.
  • the substrate is not necessarily transparent, and a substrate such as stainless foil or polyimide can also be used.
  • the electrochromic dye used when the electrochemical display element 1 is an ECD element is a compound that changes a light absorption state by accepting electrons, and an organic compound or a metal complex can be used.
  • an organic compound or a metal complex can be used.
  • a pyridine compound, a conductive polymer, or a styryl compound can be used.
  • Various viologen compounds described in JP-A-2002-328401, dyes described in JP-T-2004-537743, and other known dyes Can be used.
  • dye you may use together a color developer or a decoloring agent as needed.
  • Electrode materials may be applied directly to the surface of the electrode, or in order to more efficiently accept and receive electrons, an oxide semiconductor nanostructure typified by TiO 2 is formed on the electrode,
  • the electrochromic material may be applied and impregnated by a method such as an ink jet method.
  • Examples of the compound containing silver or silver in the chemical structure used when the electrochemical display element 1 is an ED element include, for example, silver oxide, silver sulfide, metallic silver, silver colloid particles, silver halide, silver complex compound, It is a compound such as silver ion, and there are no particular limitations on the phase state species such as a solid state, a solubilized state in a liquid, and a gas state, and charged state species such as neutral, anionic, and cationic.
  • the concentration of silver ions contained in the electrolyte 6 is preferably 0.2 mol / kg ⁇ [Ag] ⁇ 2.0 mol / kg.
  • the concentration of silver ions contained in the electrolyte 6 is preferably 0.2 mol / kg ⁇ [Ag] ⁇ 2.0 mol / kg.
  • the silver ion concentration is less than 0.2 mol / kg, a dilute silver solution is obtained, and the driving speed is delayed.
  • the silver ion concentration is more than 2 mol / kg, the solubility is deteriorated, and precipitation is likely to occur during low-temperature storage.
  • the electrolyte is usually a substance that dissolves in a solvent such as water and the solution exhibits ion conductivity, but in this embodiment, other metals or compounds are included regardless of whether the electrolyte is a non-electrolyte.
  • the mixture is called an electrolyte.
  • the electrolyte filled between the transparent conductive film 204 and the electrode film 303 is configured by appropriately selecting an organic solvent, an ionic liquid, a redox active substance, a supporting electrolyte, a complexing agent, a white scattering material, a polymer binder, and the like. Is done.
  • Electrolyte 6 is usually classified into a liquid electrolyte and a polymer electrolyte.
  • the polymer electrolyte is further classified into a solid electrolyte substantially composed of a solid compound and a gel electrolyte composed of a polymer compound and a liquid electrolyte. From the viewpoint of fluidity, the solid electrolyte has substantially no fluidity, and the gel electrolyte has a fluidity intermediate between the liquid electrolyte and the solid electrolyte.
  • a gel electrolyte can be used.
  • This gel electrolyte has a high viscosity in a room temperature environment and has fluidity.
  • the viscosity at 25 ° C. is 100 mPa ⁇ s or more and 1000 mPa ⁇ s. It is a gel-like or high-viscosity electrolyte of s or less.
  • the gel electrolyte in this embodiment does not necessarily need to have a characteristic that causes a sol-gel change with temperature.
  • a low-viscosity electrolyte may be used.
  • the viscosity of the low-viscosity electrolyte is an electrolyte having a viscosity at 25 ° C. of 0.1 mPa ⁇ s or more and less than 100 mPa ⁇ s, and is based on the solvent of the electrolyte.
  • the amount of the polymer binder is preferably less than 10% by mass.
  • Clear ink for clear screen printing both made by Teikoku Ink Co., Ltd. are formed by screen printing method at 600 ⁇ m pitch and 2 ⁇ m thickness at 540 ⁇ m square, and heat-treated at 90 ° C. for 10 minutes to form a transparent insulating resin pattern (FIG. 1 ( a): A transparent insulating film 202) was formed.
  • a copper electrode pattern (FIG. 1B: metal electrode film 203) having a thickness of 2 ⁇ m.
  • the formed copper electrode pattern had a surface roughness Ra of 25 nm.
  • Pre-dip processing 25% Cataprep 404 aqueous solution, 23 ° C./1 minute immersion / catalyze treatment: The above pre-dip solution + 3% Cataposit 44 aqueous solution, 50 ° C./5 minutes immersion / accelerator treatment: 5% Kewposit accelerator 19E aqueous solution, 23 ° C./7 minutes immersion / electroless copper plating treatment: 25% cue deposit copper mix 328A 25% cue deposit copper mix 328L 3% cue deposit copper mix 328C In this solution, all the materials used were those manufactured by Rohm and Haas Electronic Materials.
  • PEDOT / PSS polyethylenediochithiophene / polystyrenesulfonic acid
  • an IZO film (FIG. 1 (d1): transparent conductive film 204) was formed to a thickness of 50 nm by a DC sputtering method, and the transparent conductive substrate 2 was completed.
  • the sheet resistance of the obtained transparent conductive substrate 2 was 0.2 ⁇ / ⁇ , and the total light transmittance was 65%. It was confirmed that the transparent conductive film 204 did not show pin poles or cracks even after the paneling process and the panel was completed, and showed good characteristics.
  • Example 2 First, in the same manner as in Example 1, a transparent insulating resin pattern (FIG. 1 (a): transparent insulating film 202) and a copper electrode are formed on the surface of a PET substrate (FIG. 1 (a): transparent substrate 201). A pattern (FIG. 1B: metal electrode film 203) was formed.
  • nano-metal ink L-Ag1T manufactured by ULVAC Material Co., Ltd.
  • silver nanoparticles were dispersed by an inkjet method was injected onto the copper electrode pattern to form an intermediate layer 205 having a thickness of 30 nm (FIG. 1 (c2)).
  • an IZO film (FIG. 1 (d2): transparent conductive film 204) is formed to a thickness of 50 nm by a DC sputtering method, and the transparent conductive substrate 2 is formed. Completed.
  • the sheet resistance of the obtained transparent conductive substrate 2 was 0.2 ⁇ / ⁇ , and the total light transmittance was 70%. It was confirmed that the transparent conductive film 204 did not show pin poles or cracks even after the paneling process and the panel was completed, and showed good characteristics.
  • FIG. 3A to FIG. 3C are schematic cross-sectional views showing the manufacturing process of the transparent conductive substrate 2.
  • the manufacturing method of the transparent conductive substrate 2 according to the present embodiment uses a resist pattern made of a resin-based material as in the case of the first and second embodiments in the pattern forming method of the metal electrode film 203.
  • a metal electrode film is formed on the entire surface using a film forming method such as sputtering, and then a pattern is formed using a photolithography method.
  • an alloy of 98% aluminum and 2% neodymium (Al: Nd) is formed on the entire surface of a glass substrate (FIG. 3A: transparent substrate 201) by sputtering to form a metal electrode.
  • a film 203 was formed.
  • molybdenum was deposited to a thickness of 30 nm by a sputtering method to form an intermediate layer 205 (FIG. 3A).
  • the metal electrode film 203 and the intermediate layer 205 are collectively etched using a photolithography method to form a grid-like metal electrode film 203 having a width of 10 ⁇ m and a pitch of 140 ⁇ m and the intermediate layer.
  • a pattern laminated with 205 was formed (FIG. 3B).
  • an ITO film (FIG. 3C: transparent conductive film 204) was formed to a thickness of 50 nm by a DC sputtering method, and the transparent conductive substrate 2 was completed.
  • the sheet resistance of the obtained transparent conductive substrate 2 was 1.2 ⁇ / ⁇ , and the total light transmittance was 75%.
  • the ITO film was patterned by wet etching to create a panel, but it was confirmed that the aluminum-based metal electrode film 203 showed good characteristics without being corroded.
  • Example 4 is an example of the electrochemical display element 1 in the embodiment according to the present invention.
  • FIG. 4 shows a method for manufacturing the electrochemical display element 1 according to Example 4.
  • FIG. 4A to FIG. 4E are schematic cross-sectional views showing the manufacturing process of the electrochemical display element 1.
  • an a-Si TFT array formed on the surface of a glass substrate (FIG. 4 (a): substrate 301) with the transparent conductive substrate 2 obtained in Example 3 as the observation side and the non-observation side.
  • a pixel palladium electrode (FIG. 4 (a): electrode film 303) formed as a pixel electrode (FIG. 4 (a): electrode substrate 3) was prepared.
  • an electrolyte sealing material 7 was formed on the surface of the electrode substrate 3 with an epoxy resin so as to have a height of 40 ⁇ m by a dispenser method except for an injection port (not shown) (FIG. 4C).
  • the display area of the completed electrochemical display element 1 was 150 mm ⁇ 200 mm. However, even when gray display is performed on the entire surface, the display density is uniform over the entire display area and there is no display unevenness. A good image with no image defects was obtained.
  • the transparent substrate including the intermediate layer 205 is formed.
  • a transparent conductive film 204 was formed on 201. That is, the intermediate layer 205 is provided between the metal electrode film 203 and the transparent conductive film 204.
  • the difference in level of the irregularities on the surface of the metal electrode film 203 that occurs when the metal electrode film 203 is made thicker can be reduced by the intermediate layer 205, so that defects such as pin poles and cracks in the transparent conductive film 204 are generated. Can be suppressed. As a result, it is possible to obtain a transparent conductive substrate 2 having excellent characteristics and high transmittance and low resistance.
  • the electrochemical display element 1 having a configuration including the formed electrode substrate 3, it is possible to display an image with a uniform display density over the entire display area, no display unevenness, and few image defects.
  • Electrochemical display element 2 Transparent conductive substrate 201 Transparent substrate 202 Transparent insulating film 203 Metal electrode film 204 Transparent conductive film 205 Intermediate layer 3
  • Electrode substrate 301 Substrate 303
  • Electrode film 5 Confusion layer 6

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

L'invention porte sur un substrat électroconducteur transparent qui peut atteindre à la fois une transmittance élevée et une résistivité faible et possède par conséquent d'excellentes propriétés. L'invention porte également sur un procédé de fabrication d'un substrat électroconducteur transparent. L'invention porte en outre sur un élément d'affichage électrochimique. Le procédé de fabrication d'un substrat électroconducteur transparent consiste à : former un film d'électrode métallique à motifs sur un substrat transparent ; former une couche intermédiaire ayant une conductivité électrique sur au moins le film d'électrode métallique ; et former un film électroconducteur transparent sur le substrat transparent sur lequel la couche intermédiaire a été formée.
PCT/JP2009/066501 2008-10-31 2009-09-24 Substrat électroconducteur transparent, procédé de fabrication d'un substrat électroconducteur transparent, et élément d'affichage électrochimique WO2010050318A1 (fr)

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JP2008-281075 2008-10-31

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Cited By (6)

* Cited by examiner, † Cited by third party
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WO2012093530A1 (fr) * 2011-01-06 2012-07-12 リンテック株式会社 Corps stratifié conducteur transparent et dispositif à film fin organique
JP2015038837A (ja) * 2013-08-19 2015-02-26 凸版印刷株式会社 透明電極の製造方法、透明電極、及びそれを備えた有機エレクトロルミネッセンス素子
WO2016038311A1 (fr) * 2014-09-11 2016-03-17 Saint-Gobain Glass France Support electroconducteur pour dispositif electrochromique, dispositif electrochromique l'incorporant, et sa fabrication
CN105807527A (zh) * 2015-01-16 2016-07-27 株式会社理光 电致彩色显示装置，电致彩色显示元件及其制造方法
JP2018012101A (ja) * 2011-06-10 2018-01-25 シーマ ナノテック イスラエル リミテッド パターン化されたコーティングを製造するための方法
US11862746B2 (en) * 2019-04-23 2024-01-02 Syracuse University Ultrawide-angle light collecting modules formed by direct light-writing of nanoparticle-based metallo-dielectric optical waveguides

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JP2005302508A (ja) * 2004-04-12 2005-10-27 Fuji Photo Film Co Ltd 透明導電性シートおよびそれを用いたエレクトロルミネッセンス素子
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WO2008038764A1 (fr) * 2006-09-28 2008-04-03 Fujifilm Corporation Écran à émission spontanée, procédé de fabrication d'un écran à émission spontanée, film conducteur transparent, dispositif électroluminescent, électrode transparente de cellule solaire et électrode transparente de papier électronique
JP2008226753A (ja) * 2007-03-15 2008-09-25 Toray Ind Inc 色素増感型太陽電池用導電性基板

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JPS6266236A (ja) * 1985-09-18 1987-03-25 Hitachi Maxell Ltd エレクトロクロミツク表示素子
JPS63301028A (ja) * 1987-05-30 1988-12-08 Iwasaki Electric Co Ltd 溶液型エレクトロクロミック素子
JP2005019056A (ja) * 2003-06-24 2005-01-20 Toray Ind Inc 複合透明導電性基材とそれを用いたディスプレイ
JP2005108467A (ja) * 2003-09-26 2005-04-21 Mitsui Chemicals Inc 透明導電性シートおよびそれを用いた光増感太陽電池。
JP2005302508A (ja) * 2004-04-12 2005-10-27 Fuji Photo Film Co Ltd 透明導電性シートおよびそれを用いたエレクトロルミネッセンス素子
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WO2008038764A1 (fr) * 2006-09-28 2008-04-03 Fujifilm Corporation Écran à émission spontanée, procédé de fabrication d'un écran à émission spontanée, film conducteur transparent, dispositif électroluminescent, électrode transparente de cellule solaire et électrode transparente de papier électronique
JP2008226753A (ja) * 2007-03-15 2008-09-25 Toray Ind Inc 色素増感型太陽電池用導電性基板

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WO2012093530A1 (fr) * 2011-01-06 2012-07-12 リンテック株式会社 Corps stratifié conducteur transparent et dispositif à film fin organique
CN103348417A (zh) * 2011-01-06 2013-10-09 琳得科株式会社 透明导电性层压体以及有机薄膜装置
JPWO2012093530A1 (ja) * 2011-01-06 2014-06-09 リンテック株式会社 透明導電性積層体および有機薄膜デバイス
JP2018012101A (ja) * 2011-06-10 2018-01-25 シーマ ナノテック イスラエル リミテッド パターン化されたコーティングを製造するための方法
JP2015038837A (ja) * 2013-08-19 2015-02-26 凸版印刷株式会社 透明電極の製造方法、透明電極、及びそれを備えた有機エレクトロルミネッセンス素子
WO2015025474A1 (fr) * 2013-08-19 2015-02-26 凸版印刷株式会社 Procédé pour fabriquer une électrode transparente, électrode transparente et élément électroluminescent organique comportant ladite électrode
US9923164B2 (en) 2013-08-19 2018-03-20 Toppan Printing Co., Ltd. Method for manufacturing transparent electrode, transparent electrode, and organic electroluminescence device provided with the same
WO2016038311A1 (fr) * 2014-09-11 2016-03-17 Saint-Gobain Glass France Support electroconducteur pour dispositif electrochromique, dispositif electrochromique l'incorporant, et sa fabrication
FR3025944A1 (fr) * 2014-09-11 2016-03-18 Saint Gobain Support electroconducteur pour dispositif electrochromique, dispositif electrochromique l'incorporant, et sa fabrication.
US10209600B2 (en) 2014-09-11 2019-02-19 Saint-Gobain Glass France Electrically conducting support for an electrochromic device, electrochromic device incorporating it, and its manufacture
CN105807527A (zh) * 2015-01-16 2016-07-27 株式会社理光 电致彩色显示装置，电致彩色显示元件及其制造方法
US11862746B2 (en) * 2019-04-23 2024-01-02 Syracuse University Ultrawide-angle light collecting modules formed by direct light-writing of nanoparticle-based metallo-dielectric optical waveguides

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