WO2010043287A1 - Dotierte granat-leuchtstoffe mit rotverschiebung für pcleds - Google Patents
Dotierte granat-leuchtstoffe mit rotverschiebung für pcleds Download PDFInfo
- Publication number
- WO2010043287A1 WO2010043287A1 PCT/EP2009/006356 EP2009006356W WO2010043287A1 WO 2010043287 A1 WO2010043287 A1 WO 2010043287A1 EP 2009006356 W EP2009006356 W EP 2009006356W WO 2010043287 A1 WO2010043287 A1 WO 2010043287A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- phosphor
- formula
- light source
- mmol
- sio
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/38—Devices for influencing the colour or wavelength of the light
- H01J61/42—Devices for influencing the colour or wavelength of the light by transforming the wavelength of the light by luminescence
- H01J61/44—Devices characterised by the luminescent material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/77744—Aluminosilicates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
- Y10T428/24372—Particulate matter
- Y10T428/24413—Metal or metal compound
Definitions
- the invention relates to phosphors consisting of Th 4+ , Sb 3+ , Ir 3+ and / or Se 3+ -coated garnets, their preparation and their use as LED conversion phosphors for warm white LEDs or so-called color on demand applications.
- This concept is e.g. used to create certain corporate designs, e.g. for illuminated company logos, brands etc.
- Solid-state light sources with YAG Ce today usually provide only cold white colors (T c > 5000 K), whereby their application in general lighting, especially in the interior area, is limited.
- T c > 5000 K cold white colors
- Concentration or thermal quenching reduces phosphor, which is unacceptable for use in a light source because, in the present cases, this also leads to a reduction in phosphor brightness.
- the phosphor brightness is the essential criterion for use in light sources, because the customer, with defined excitability and defined color point, carries out the choice of the phosphor solely on the basis of its brightness.
- the price of the phosphor does not play the decisive role because it is negligible compared to the total price of the LED. Therefore, there is still a great need to find solutions that can shift the emission band of the 5d-4f transition of the YAG.Ce into the red spectral range without reducing the brightness of the phosphor.
- the materials are annealed by the known in the art solid-state diffusion method (also called mix & fire) of oxides in a CO atmosphere.
- the CO is made by placing a container of activated charcoal around the crucible containing the educts are placed. Upon heating, a Boudouard equilibrium forms, creating a CO gas atmosphere.
- the resulting materials are described in relative brightness, which makes it difficult to understand how bright these materials really are.
- the Chinese application shows that the
- WO2008051486 discloses a material (Y, A) 3 (Al, B) 5 (O,
- Nano-phosphor particles lead in the LED to a lower brightness than microparticles, which is familiar to the person skilled in the art: In such small particles, a large part of the Ce activators is on the surface. There, these ions are exposed to an inhomogeneous crystal field and unavoidable surface defects lead to the absorption of the photons to be emitted. Fluorine-containing phosphors can not be used in LEDs because fluorine (id) may not be present in electronic components (LEDs) as part of the ROHS list. The described phosphors can emit in a range between "540-560" nm, which are more easily accessible using a YAG, LuAG, and TAG, respectively.
- the object of the present invention is therefore to provide red-shifted, ie fluorescent in the range of 560-605 nm, conversion phosphors for white LEDs or for color-on-demand applications, which do not have one or more of the disadvantages mentioned above and warm generate white light.
- Ce phosphors can be realized with a distinct redshift if one part of the Al 3+ cations by Si 4+ and at the same time for charge compensation an analogous proportion of Al 3+ cations by Mg 2+ substituted if one or more elements from the group Se 1 Th, Ir, Sb are used as codotants.
- these four codotants are each present at least in a concentration of 100 ppm.
- the present invention thus provides phosphors with garnet structure of the formula I.
- garnet structure is here of course also slightly different from the ideal case of garnet, based on defects or lattice disorder structure meant as long as this crystal is the typical
- SE rare earth metal
- B Al, Ga
- D activator replacing SE such as cerium means.
- the doping concentration of the cerium is between 0.5 and 10% by weight. It is more preferably between 2.0 and 5.0 wt
- % and most preferably between 3.0 and 3.5% by weight.
- cerium concentration between 3.0 and 3.5 wt.%, There is generally an increased absorption and thus an increased light output or a greater brightness of the phosphor. A higher cerium concentration would reduce the quantum yield and in turn lead to a reduced light output.
- the degree of substitution y essentially determines the position of the emission maximum of the above composition.
- YsAI 5 y Mgy / 2 Siy / 2 ⁇ -i 2 : Ce the maximum of the Ce 3+ emission band can be shifted from 555 to 605 nm.
- the co-dopants Sb, Ir, Th, Se have no significant influence on the position of the emission maximum or the color point of the phosphors according to the invention.
- Redshifts are explained as follows: responsible for the redshift of the YAG: Ce phosphors is the covalent nature of the Ce-O bonds, ie, the effective negative charge of the anions and the overlap between the anion and activator orbitals. In general it can be stated that with increasing covalent character the Ce 3+
- a phosphor according to formula I wherein it is in the compound of formula I is a compound selected from the
- x 0.015 to 0.05.
- the particle size of the phosphors according to the invention is between 50 nm and 30 .mu.m, preferably between 1 .mu.m and 20 .mu.m, more preferably between 2 and 10 .mu.m.
- the phosphor of the formula I may additionally comprise at least one further of the following phosphor materials:
- the phosphor has a patterned (e.g., pyramidal) surface on the side opposite an LED chip (see WO2008 / 058619, Merck, which is incorporated by reference in its entirety in the context of the present application).
- a patterned (e.g., pyramidal) surface on the side opposite an LED chip (see WO2008 / 058619, Merck, which is incorporated by reference in its entirety in the context of the present application).
- Coating with a suitable material which is already structured, or produced in a subsequent step by (photo) lithographic processes, etching processes or by writing processes with energy or matter jets or by the action of mechanical forces.
- the phosphors according to the invention have on the, an LED chip opposite side a rough surface, the nanoparticles of SiO 2 , TiO 2 , Al 2 O 3, ZnO 2, ZrO 2 and / or Y 2 O 3 or combinations of these materials and / or of particles with the phosphor composition according to formula I with or without dopants from the series Ce, Th, Ir, Sb and / or Se carries.
- a rough surface has a roughness of up to several 100 nm.
- the coated surface has the advantage that total reflection can be reduced or prevented and the light can be better decoupled from the phosphor according to the invention (see WO2008 / 058619 (Merck), which is full is incorporated by reference in the context of the present application.)
- the phosphors according to the invention have a refractive index-adapted layer on the surface facing away from the chip, which facilitates the decoupling of the primary radiation and / or the radiation emitted by the phosphor body.
- the phosphors have a closed surface coating consisting of SiO 2 , TiO 2 , Al 2 O 3, ZnO , ZrO 2 and / or Y 2 O 3 or mixed oxides and / or of the phosphor composition of the formula I without the activator Cer consists.
- This surface coating has the advantage that an adaptation of the refractive index to the environment can be achieved by a suitable graduation of the refractive indices of the coating materials. In this case, the scattering of the light at the surface of the phosphor is reduced and a larger portion of the light can be absorbed in the
- the refractive index matched surface coating allows more light to be coupled out of the phosphor because the total internal reflection is reduced.
- a closed layer is advantageous if the phosphor has to be encapsulated. This may be necessary to one Sensitivity of the phosphor or parts thereof to diffusing water or other materials in the immediate vicinity. Another reason for the encapsulation with a closed shell is a thermal decoupling of the actual phosphor from the heat that arises in the chip. This heat leads to a reduction in the fluorescent light output of the phosphor and may also affect the color of the fluorescent light. Finally, it is possible by such a coating to increase the efficiency of the phosphor by preventing lattice vibrations arising in the phosphor from propagating to the environment.
- the phosphors have a porous surface coating consisting of SiO 2 , TiO 2 , Al 2 O 3, ZnO , ZrO 2 and / or Y 2 O 3 or mixed oxides thereof and / or from the phosphor composition according to formula I with or without dopants from the
- the application is incorporated by reference: the etching of glass (e.g., soda-lime glasses (see US 4019884)), the application of a porous layer and the combination of porous layer and an etching process.
- glass e.g., soda-lime glasses (see US 4019884)
- porous layer e.g., soda-lime glasses (see US 4019884)
- the phosphors have a surface which carries functional groups, which allows a chemical or physical connection to the environment, preferably consisting of epoxy or silicone resin.
- functional groups can be, for example, esters attached via oxo groups or other derivatives which can form linkages with constituents of the binders based on epoxides and / or silicones.
- Such surfaces have the advantage that a homogeneous mixing of the phosphors in the binder is made possible.
- the rheological properties of the system phosphor / binder and also the pot life can be adjusted to a certain extent. This simplifies the processing of the mixtures.
- a physical connection to the environment is referred to when between the systems electrostatic interactions via charge fluctuations or partial charges act.
- the phosphor layer of the invention applied to the LED chip preferably consists of a mixture of silicone and homogeneous phosphor particles, and the silicone has a surface tension, this phosphor layer is not uniform at the microscopic level or the thickness of the layer is not consistently constant.
- the phosphors of the invention may contain 0 to 20 wt.% Of alkali or alkaline earth metals such as Li, Na, K, Ca, Sr, Ba and halides such as F or Cl. These are preferably used as flux in the production of phosphors and serve to increase the crystal quality, coarsening of the particle size and the
- Particle morphology and thus have a high potential for increasing the efficiency of the phosphors.
- a further subject of the present invention is a garnet-structured phosphor obtainable by mixing aluminum, magnesium,
- the educts for the preparation of the phosphor are, as mentioned above, of the base material (eg, oxides of aluminum, yttrium, silicon, magnesium and cerium) and at least one Sb, Se, Iroder Th-containing dopant and optionally further Lu or Tb-containing materials.
- suitable starting materials include other inorganic and / or organic substances such as nitrates, carbonates, bicarbonates, phosphates, carboxylates, alcoholates, acetates, oxalates, halides, sulfates, organometallic compounds, hydroxides of metals, semimetals, transition metals and / or rare earths which may be dissolved and / or suspended in inorganic and / or organic liquids.
- oxides are used which contain the corresponding elements in the required stoichiometric ratio.
- Another object of the present invention is a method for
- Producing a phosphor with the following process steps: a) producing a cerium-activated phosphor which is co-doped with materials containing Sb, Se, Ir and / or Th, by mixing at least 5 starting materials selected from Y-, Al-, Mg, Si. Ce, Lu, Tb, containing materials. b) Thermal aftertreatment of the Sb, Se, Ir and / or Theodot convinced phosphor.
- spray pyrolysis also called spray pyrolysis
- aqueous or organic salt solutions educts
- nitrate solutions of the corresponding phosphorus are mixed with an NH 4 HCO 3 solution, whereby the phosphor precursor is formed.
- Spray pyrolysis belongs to the aerosol processes which are characterized by spraying solutions, suspensions or dispersions into a reaction chamber (reactor) which has been heated in different ways, as well as the formation and separation of solid particles.
- a reaction chamber reactor
- hot gas temperatures ⁇ 200 0 C find in the spray pyrolysis as a high-temperature process except the
- the annealing is performed at least partially under reducing conditions (for example, with carbon monoxide, forming gas, pure or hydrogen or at least vacuum or oxygen deficient atmosphere).
- Phosphor particles are produced, such as spherical particles, platelets and structured materials and ceramics.
- platelet-shaped phosphors as a further preferred embodiment is done by conventional methods from the corresponding metal and / or rare earth salts.
- the preparation process is described in detail in EP 763573 and WO2008 / 058620, which are incorporated by reference in the context of the present application.
- These platelet-shaped phosphors can be prepared by using a natural or synthetically produced highly stable support or a substrate of, for example mica, SiO 2 , Al 2 O 3 , ZrO 2 , glass or TiO 2 platelets, which is a very large Has aspect ratio, an atomically smooth surface and an adjustable thickness, can be coated by precipitation reaction in aqueous dispersion or suspension with a phosphor layer.
- the platelets may also consist of the phosphor material itself, or be composed of a material. If the wafer itself merely serves as a carrier for the phosphor coating, it must be made of a material that is transparent to the primary radiation of the LED, or absorbs the primary radiation and this energy on the phosphor layer transfers.
- the platelet-shaped phosphors are in a resin (eg
- the platelet-shaped phosphors can be produced on a large scale in thicknesses of 50 nm up to about 20 ⁇ m, preferably between 150 nm and 5 ⁇ m.
- the diameter is from 50 nm to 20 microns.
- the platelet extent (length x width) depends on the arrangement. Platelets are also suitable as scattering centers within the
- the LED chip surface facing the platelet-shaped phosphor according to the invention can be provided with a coating which anti-reflective with respect to the emitted from the LED chip
- Fluorescent body can be coupled.
- Coating may also consist of photonic crystals. This also includes a structuring of the surface of the platelet-shaped phosphor in order to achieve certain functionalities.
- the production of the phosphors according to the invention in the form of ceramic bodies takes place analogously to the process described in WO 2008/017353 (Merck), which is incorporated by reference in its entirety into the context of the present application.
- the phosphor is prepared wet-chemically by mixing the corresponding reactants and dopants, then isostatically pressed and in shape of a homogeneous thin and non-porous plate applied directly to the surface of the chip.
- no location-dependent variation of the excitation and emission of the phosphor takes place, as a result of which the LED equipped with it emits a homogeneous and color-constant light cone and has a high light output.
- Phosphor bodies can be produced industrially, for example, as platelets in thicknesses of a few 100 nm up to about 500 ⁇ m.
- the platelet extent (length x width) depends on the arrangement.
- the size of the wafer according to the chip size from about 100 .mu.m * 100 microns to several mm 2 ) with a certain excess of about 10% - 30% of the chip surface with a suitable chip arrangement (eg Flip Chip arrangement) or to choose accordingly. If the phosphor plate is placed over a finished LED, the emerging cone of light is completely covered by the plate.
- the side surfaces of the ceramic phosphor body can be mirrored with a light or noble metal, preferably aluminum or silver.
- the mirroring causes no light to emerge laterally from the phosphor body. Lateral exiting light can reduce the luminous flux to be coupled out of the LED.
- the mirroring of the ceramic phosphor body is carried out in a process step after the isostatic pressing to bars or plates, which may be done before the mirroring a tailor of the rods or plates in the required size.
- the side surfaces are for this purpose e.g. wetted with a solution of silver nitrate and glucose and then exposed at elevated temperature to an ammonia atmosphere.
- a silver coating on the side surfaces e.g. a silver coating on the side surfaces.
- electroless metallization processes are also suitable, see, for example, Hollemann-Wiberg, Lehrbuch der Inorganischen Chemie,
- the ceramic phosphor body can, if necessary, be fixed with a water glass solution on the substrate of an LED chip.
- the ceramic phosphor body has a patterned (e.g., pyramidal) surface on the side opposite an LED chip.
- a patterned (e.g., pyramidal) surface on the side opposite an LED chip.
- the excitability of the phosphors according to the invention also extend over a wide range, ranging from about 410 nm to 530 nm, preferably 430 nm to about 500 nm.
- these phosphors are not only suitable for excitation by UV or blue emitting primary light sources such as LEDs or conventional discharge lamps (eg based on Hg), but also for light sources such as those which exploit the blue In 3+ line at 451 nm.
- Another object of the present invention is a lighting unit with at least one primary light source whose emission maximum or maximum ranges in the range 410 nm to 530 nm, preferably 430 nm to about 500 nm. Particularly preferred is a range between 440 and 480 nm, wherein the primary radiation is partially or completely converted by the phosphors according to the invention into longer-wave radiation.
- this is Lighting unit emits white or emits light with a specific color point (color-on-demand principle). Preferred embodiments of the lighting units according to the invention are shown in FIGS. 9 to 20.
- the person skilled in possible forms of such light sources are known. These may be light-emitting LED chips of different construction.
- the light source is a luminescent arrangement based on ZnO, TCO (transparent conducting oxide), ZnSe or SiC or else an arrangement based on an organic light-emitting layer (OLED).
- the light source is a source that shows electroluminescence and / or photoluminescence. Furthermore, the light source may also be a plasma or discharge source.
- the phosphors according to the invention can either be dispersed in a resin (eg epoxy or silicone resin) or, with suitable size ratios, can be arranged directly on the primary light source or can be remotely located therefrom, depending on the application (the latter arrangement also includes “remote phosphor technology”).
- a resin eg epoxy or silicone resin
- the advantages of the "remote phosphor technology” are those skilled in the art known and, for example, refer to the following publication: Japanese Journ. of Appl. Phys. Vol. 44, no. 21 (2005). L649-L651.
- Primary light source is realized by a photoconductive arrangement. This makes it possible that the primary light source is installed at a central location and this is optically coupled to the phosphor by means of light-conducting devices, such as light-conducting fibers. In this way, the lighting requirements adapted lights can only be realized consisting of one or different phosphors, which can be arranged to form a luminescent screen, and a light guide, which is coupled to the primary light source realize. In this way it is possible to place a strong primary light source at a convenient location for the electrical installation and to install without further electrical wiring, but only by laying fiber optics at any location lights of phosphors, which are coupled to the light guide.
- Another object of the present invention is the use of the phosphors according to the invention for the partial or complete conversion of blue or in the near UV emission of a light-emitting diode.
- Phosphors for conversion of blue or near UV emission into visible white radiation are preferred.
- the use of the phosphors according to the invention for converting the primary radiation into a specific color point according to the "color on demand" concept is preferred.
- Another object of the present invention is the use of the phosphors according to the invention in electroluminescent materials, such as electroluminescent films (also called phosphors or light foils) in which, for example, zinc sulfide or zinc sulfide doped with Mn 2+ , Cu + , or Ag + as an emitter is used, which emit in the yellow-green area.
- the fields of application of the electroluminescent film are, for example, advertising, display backlighting in liquid crystal displays (LC displays) and thin-film transistor displays (TFT displays), self-illuminating license plate labels, floor graphics (in conjunction with a non-slip and non-slip laminate), in display and / or controls for example in automobiles, trains, ships and aircraft or household, gardening, measuring or sports and leisure equipment.
- LC displays liquid crystal displays
- TFT displays thin-film transistor displays
- license plate labels in conjunction with a non-slip and non-slip laminate
- floor graphics in conjunction with a non-slip and non-slip laminate
- composition (Y, Lu) 3 AIMg 2 Si 2 O 12 Ce
- the starting materials 4.4728 g of Y 2 O 3 , 15.5193 g of Lu 2 O 3 , 2.1207 g of Al 2 O 3 , 0.4130 g of CeO 2 , 8.0094 g of MgCO 3 and 4.9067 g of SiO 2 are ground in 50 ml of ethanol for 45 minutes. Thereafter, the resulting paste is dried in a drying oven and placed in a corundum crucible. The mixture is then sintered at 1500 0 C under CO for 8 h and the resulting
- Example 1b Preparation of the orange-emitting, Sb-codoped phosphor of the composition with Lu
- the starting materials 4.4728 g (20 mmol) of Y 2 O. 3 , 14.2778 g (36 mmol) of Lu 2 O 3 , 1, 5840 g (6 mmol) of ThO 2 , 2,1207 g (21 mmol) of Al 2 O 3 , 0.4130 g of CeO 2 ,
- Example 1e Preparation of the Ir-emitting Ir Co-doped Phosphorus Composition (Y 5 Lu 1 Ir) 3 AIMg 2 Si 2 Oi 2 ) Ce, with Lu:
- Example 2a Preparation of the orange-emitting phosphor of the composition (Y 1 Lu) 3 Al 3 MgSiOi 2 ICe.
- the starting materials 4.4728 g (20 mmol) of Y 2 O 3 , 15.5193 g (39 mmol) of Lu 2 O 3 , 6.3623 g (62 mmol) of Al 2 O 3 , 0.4130 g (2 mmol) of CeO 2 , 4.0471 g (48 mmol) MgCO 3 and 2.4039 g (40 mmol) of SiO 2 are dissolved in 50 ml of ethanol 45 min. Thereafter, the resulting paste is dried in a drying oven and placed in a corundum crucible. The mixture is then sintered at 1500 ° C. for 8 hours under CO 2 and the resulting sintered cake is comminuted in an agate mortar and the powder is finally sieved through a 36 ⁇ m sieve.
- Lu 2 O 3 , 0.8237 g (3 mmol) of ThO 2 , 6.3623 g (62 mmol) of Al 2 O 3 , 0.4130 g (2 mmol) of CeO 2 , 4.0471 g (48 mmol) of MgCO 3 and 2.4039 g (40 mmol ) SiO 2 are ground in 50 ml of ethanol for 45 min. Thereafter, the resulting paste is dried in a drying oven and placed in a corundum crucible. The mixture is then sintered at 1500 ° C for 8h under CO and the obtained
- Example 2c Preparation of the orange-emitting, Se codoped phosphor of the composition (Y 1 Lu, Se) 3 Al 3 MgSiOi 2 : Ce with Lu:
- the starting materials 4.4728 g (20 mmol) of Y 2 O 3 , 14.280 g (36 mmol) of Lu 2 O 3 , 0.3241 g (3 mmol) of SeO 2 , 6.3623 g (62 mmol) of Al 2 O 3 , 0.4130 g (2 mmol) CeO 2 , 4.0471 g (48 mmol) MgCO 3 and 2.4039 g (40 mmol) SiO 2 are ground in 50 ml ethanol for 45 min. Thereafter, the resulting paste is dried in a drying oven and placed in a corundum crucible.
- Lu 2 O 3 , 0.648 g (1.5 mmol) Ir 2 O 3 , 6.3623 g (62 mmol) Al 2 O 3 , 0.4130 g (2 mmol) CeO 2 , 4.0471 g (48 mmol) MgCO 3 and 2.4039 g ( 40 mmol) of SiO 2 are ground in 50 ml of ethanol for 45 minutes. Thereafter, the resulting paste is dried in a drying oven and placed in a corundum crucible. The mixture is then sintered at 1500 0 C under CO for 8 h and the resulting
- Example 2e Preparation of the orange-emitting, Sb-codoped phosphor of the composition (Y 1 Lu 1 Sb) 3 Al 3 MgSiOi 2 ICe with Lu:
- the starting materials 4.4728 g (20 mmol) of Y 2 O 3 , 14.280 g (36 mmol) of Lu 2 O 3 , 0.4382 g (1.5 mmol) of Sb 2 O 3 , 6.3623 g (62 mmol) of Al 2 O 3 , 0.4130 g (2 mmol) CeO 2 , 4.0471 g (48 mmol) MgCO 3 and 2.4039 g (40 mmol) SiO 2 are ground in 50 ml ethanol for 45 min. Thereafter, the resulting paste is dried in a drying oven and placed in a corundum crucible. The mixture is then sintered at 1500 ° C. for 8 hours under CO 2 and the resulting sintered cake is comminuted in an agate mortar and the powder is finally sieved through a 36 ⁇ m sieve.
- FIG. 4 shows an enlarged detail from FIG. 3 for improved representation of the emission peak maxima.
- Fig. 6 shows an excitation (2), emission (3), and reflectance spectrum (i) of (Y 1 Lu) 3 Al 3 MgSiO 12 ICe.
- Fig. 7 shows emission spectra of the phosphors according to the invention from the embodiments 2 a to e.
- the higher brightness of the codoped phosphors (b to e) compared to the non-codoped phosphor (a) can be seen.
- FIG. 8 shows a detail enlargement from FIG. 7 for a better differentiation of the peak maxima
- FIG. 9 shows the schematic illustration of a light-emitting diode with a phosphor-containing coating.
- the component comprises a chip-like
- LED 1 as a radiation source.
- the LED is attached to a cup-shaped reflector, which is held by a Justageahmen 2.
- Chip 1 is connected via a flat cable 7 to a first contact 6 and directly to a second electrical contact 6 ' .
- a coating was applied, which contains a conversion luminescent material according to the invention.
- the phosphors are used either separately or as a mixture.
- the phosphor is distributed in a binder lens, which simultaneously constitutes a secondary optical element and influences the light emission characteristic as a lens.
- COB chip on board package of the type InGaN, which serves as light source (LED) for white light
- LED light source
- the phosphor is located in a thin layer of binder directly on the LED chip and a secondary optical element made of a transparent material can be placed on top of it.
- Conversion luminescent material in cavity with reflector Conversion luminescent material in cavity with reflector.
- the conversion phosphor is dispersed in a binder, the mixture filling the cavity.
- This design has the advantage that it is a flip-chip design, with over the transparent substrate and a reflector on the ground a larger proportion of the light from the chip can be used for light purposes. In addition, the heat dissipation is favored in this design.
- the semiconductor chip is completely covered with the phosphor according to the invention.
- the SMD design has the advantage that it has a small design and thus fits into conventional luminaires.
- the conversion phosphor is located on the back side of the LED chip, which has the advantage that the phosphor is cooled via the metallic connections.
- This form of phosphor / binder layer may act as a secondary optical element and may be e.g. B. influence the light propagation.
- Fig. 19 shows an example of another application, as already known in principle from US Pat. No. 6,700,322.
- the phosphor according to the invention is used together with an OLED.
- the light source is an organic light-emitting diode 31, consisting of the actual organic film 30 and a transparent substrate 32.
- the film 30 emits in particular blue primary light, generated for example by means of
- PVK PBD: coumarin (PVK 1 abbreviation for poly (n-vinylcarbazole); PBD, abbreviation for 2- (4-biphenyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole) ).
- the emission is partially converted into a yellow, secondarily emitted light by a cover layer, formed from a layer 33 of the phosphor according to the invention, so that a white emission is achieved overall by color mixing of the primary and secondary emitted light.
- the OLED consists essentially of at least one layer of a light-emitting polymer or of so-called small molecules between two electrodes, which consist of materials known per se, such as ITO (abbreviation for "indium tin oxide”) as the anode and a highly reactive metal, For example, Ba or Ca, as a cathode, often multiple layers are used between the electrodes, which either serve as a hole transport layer or serve as electron transport layers in the area of the "small molecules".
- ITO abbreviation for "indium tin oxide”
- Ba or Ca as a cathode
- emitting polymers for example, polyfluorene or polyspiro materials are used.
- FIG. 20 shows a low-pressure lamp 20 with a mercury-free gas filling 21 (schematized), which contains an indium filling and a buffer gas analogous to WO 2005/061659, wherein a layer 22 of the phosphors according to the invention is attached.
- a mercury-free gas filling 21 (schematized), which contains an indium filling and a buffer gas analogous to WO 2005/061659, wherein a layer 22 of the phosphors according to the invention is attached.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/123,758 US8350465B2 (en) | 2008-10-13 | 2009-09-02 | Doped garnet fluorescent substance having red shift for pc LEDs |
JP2011530381A JP5611960B2 (ja) | 2008-10-13 | 2009-09-02 | pcLEDのための赤方偏移を有するドープされたガーネット蛍光物質 |
CN200980140453.1A CN102186944B (zh) | 2008-10-13 | 2009-09-02 | 用于pc led的具有红移的掺杂石榴石发光材料 |
EP09778282A EP2350231A1 (de) | 2008-10-13 | 2009-09-02 | Dotierte granat-leuchtstoffe mit rotverschiebung für pcleds |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008051029A DE102008051029A1 (de) | 2008-10-13 | 2008-10-13 | Dotierte Granat-Leuchtstoffe mit Rotverschiebung für pcLEDs |
DE102008051029.7 | 2008-10-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2010043287A1 true WO2010043287A1 (de) | 2010-04-22 |
Family
ID=41259542
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2009/006356 WO2010043287A1 (de) | 2008-10-13 | 2009-09-02 | Dotierte granat-leuchtstoffe mit rotverschiebung für pcleds |
Country Status (8)
Country | Link |
---|---|
US (1) | US8350465B2 (de) |
EP (1) | EP2350231A1 (de) |
JP (1) | JP5611960B2 (de) |
KR (1) | KR20110069151A (de) |
CN (1) | CN102186944B (de) |
DE (1) | DE102008051029A1 (de) |
TW (1) | TW201024393A (de) |
WO (1) | WO2010043287A1 (de) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013005356A1 (ja) | 2011-07-05 | 2013-01-10 | パナソニック株式会社 | 希土類アルミニウムガーネットタイプ蛍光体およびこれを用いた発光装置 |
WO2014097527A1 (ja) | 2012-12-20 | 2014-06-26 | パナソニック株式会社 | 希土類アルミニウムガーネットタイプ無機酸化物、蛍光体及びこれを用いた発光装置 |
WO2014136407A1 (ja) | 2013-03-08 | 2014-09-12 | パナソニック株式会社 | 希土類アルミニウムガーネットタイプ無機酸化物、蛍光体及びこれを用いた発光装置 |
JP2014534306A (ja) * | 2011-10-17 | 2014-12-18 | グリレム アドヴァンスド マテリアルズ カンパニー リミテッドGrirem Advanced Materials Co.,Ltd. | Led赤色蛍光体及び該蛍光体を含有する発光デバイス |
CN104250555A (zh) * | 2013-06-27 | 2014-12-31 | 宁波升谱光电半导体有限公司 | 黄色荧光粉及其制备方法和使用该荧光粉的发光器件 |
WO2015045260A1 (ja) | 2013-09-30 | 2015-04-02 | パナソニックIpマネジメント株式会社 | 蛍光体及びこれを用いた発光装置、照明光源、照明装置 |
JP2015528042A (ja) * | 2012-10-25 | 2015-09-24 | フォース4 コーポレーション | トリウムがドープされたガーネット系蛍光体及びこれを用いた発光装置 |
US11050005B2 (en) | 2016-03-08 | 2021-06-29 | Panasonic Intellectual Property Management Co., Ltd. | Phosphor and light emitting device |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8133461B2 (en) | 2006-10-20 | 2012-03-13 | Intematix Corporation | Nano-YAG:Ce phosphor compositions and their methods of preparation |
US8475683B2 (en) | 2006-10-20 | 2013-07-02 | Intematix Corporation | Yellow-green to yellow-emitting phosphors based on halogenated-aluminates |
US9120975B2 (en) | 2006-10-20 | 2015-09-01 | Intematix Corporation | Yellow-green to yellow-emitting phosphors based on terbium-containing aluminates |
US8529791B2 (en) | 2006-10-20 | 2013-09-10 | Intematix Corporation | Green-emitting, garnet-based phosphors in general and backlighting applications |
US20130182444A1 (en) * | 2010-03-06 | 2013-07-18 | Blackbrite Aps | Led head and photon extractor |
WO2012011279A1 (ja) * | 2010-07-20 | 2012-01-26 | パナソニック株式会社 | 電球形ランプ |
TWI474967B (zh) * | 2011-07-14 | 2015-03-01 | Getters Spa | 有關磷光體之改良 |
JP5842701B2 (ja) * | 2012-03-27 | 2016-01-13 | 信越化学工業株式会社 | 希土類元素が拡散された酸化物セラミック蛍光材料 |
CN103375708B (zh) * | 2012-04-26 | 2015-10-28 | 展晶科技(深圳)有限公司 | 发光二极管灯源装置 |
CN102703056B (zh) * | 2012-05-09 | 2014-06-25 | 苏州英特华照明有限公司 | 一种复合包膜led荧光粉颗粒及其包膜方法 |
DE102012107797A1 (de) * | 2012-08-23 | 2014-02-27 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauelements und Licht emittierendes Halbleiterbauelement |
DE102012021570A1 (de) | 2012-11-02 | 2014-05-22 | Merck Patent Gmbh | Eu-aktivierte Leuchtstoffe |
CN102936497B (zh) * | 2012-11-08 | 2014-12-31 | 广州有色金属研究院 | 一种发射主峰变化可调的荧光材料及其制备方法 |
EP2733190B1 (de) * | 2012-11-16 | 2020-01-01 | LG Innotek Co., Ltd. | Phosphorzusammensetzung und lichtemittierende Vorrichtung damit |
CN103965906A (zh) * | 2013-02-01 | 2014-08-06 | 常州化学研究所 | 一种钇铝石榴石荧光粉材料及其制备方法 |
KR101496718B1 (ko) * | 2013-04-15 | 2015-03-02 | 주식회사 포스포 | 형광체 및 발광소자 |
JP5620562B1 (ja) * | 2013-10-23 | 2014-11-05 | 株式会社光波 | 単結晶蛍光体及び発光装置 |
CN103952153A (zh) * | 2014-05-21 | 2014-07-30 | 烟台建塬光电技术有限公司 | 掺杂Lu、Sb的铝酸盐绿色荧光粉及其制备方法 |
US9331253B2 (en) | 2014-09-03 | 2016-05-03 | Cree, Inc. | Light emitting diode (LED) component comprising a phosphor with improved excitation properties |
DE112015005560T5 (de) | 2014-12-12 | 2017-09-07 | Panasonic Intellectual Property Management Co., Ltd. | Licht-emittierende Vorrichtung |
WO2016199406A1 (ja) * | 2015-06-12 | 2016-12-15 | 株式会社 東芝 | 蛍光体およびその製造方法、ならびにledランプ |
US10125314B2 (en) | 2015-09-29 | 2018-11-13 | Philips Lighting Holding B.V. | Lighting device with ceramic garnet |
US10611959B2 (en) * | 2016-08-29 | 2020-04-07 | Panasonic Intellectual Property Management Co., Ltd. | Phosphor and light emitting device |
CN106635014A (zh) * | 2016-12-02 | 2017-05-10 | 浙江工业大学 | 一种石榴石结构单基质白光荧光粉及其制备方法和应用 |
KR102359594B1 (ko) * | 2017-09-19 | 2022-02-07 | 엘지디스플레이 주식회사 | 복합 무기 발광 재료, 발광 필름, 이를 포함하는 엘이디 패키지, 발광다이오드 및 발광장치 |
JP2021155254A (ja) | 2020-03-26 | 2021-10-07 | パナソニックIpマネジメント株式会社 | セラミクス複合体 |
CN113578307B (zh) * | 2021-08-10 | 2023-09-19 | 无锡威孚环保催化剂有限公司 | 一种高效的车用天然气催化剂及其制备方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4093890A (en) * | 1976-05-13 | 1978-06-06 | U.S. Philips Corporation | Terbium-activated luminescent garnet material and mercury vapor discharge lamp containing the same |
US20050099786A1 (en) * | 2003-11-07 | 2005-05-12 | Ru-Shi Liu | Yellow phosphor material and white light-emitting device using the same |
DE102004051519A1 (de) * | 2003-10-22 | 2005-05-25 | GE Medical Systems Global Technology Company, LLC, Waukesha | Terbium oder Lutetium enthaltende Szintillatorverbindungen mit erhöhter Beständigkeit gegenüber Strahlungsschaden |
EP1566426A2 (de) * | 2004-02-23 | 2005-08-24 | LumiLeds Lighting U.S., LLC | Lichtemittierende Vorrichtung, enthaltend einen wellenlängenkonvertierenden Leuchtstoff |
US20050205874A1 (en) * | 2004-03-19 | 2005-09-22 | Ru-Shi Liu | Phosphor material and white light-emitting device using the same |
WO2007144060A1 (de) * | 2006-06-12 | 2007-12-21 | Merck Patent Gmbh | Verfahren zur herstellung von granat-leuchtstoffen in einem pulsationsreaktor |
DE102007010719A1 (de) * | 2007-03-06 | 2008-09-11 | Merck Patent Gmbh | Leuchtstoffe bestehend aus dotierten Granaten für pcLEDs |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4019884A (en) | 1976-01-22 | 1977-04-26 | Corning Glass Works | Method for providing porous broad-band antireflective surface layers on chemically-durable borosilicate glasses |
JP3242561B2 (ja) | 1995-09-14 | 2001-12-25 | メルク・ジヤパン株式会社 | 薄片状酸化アルミニウム、真珠光沢顔料及びその製造方法 |
US6700322B1 (en) | 2000-01-27 | 2004-03-02 | General Electric Company | Light source with organic layer and photoluminescent layer |
WO2003027015A1 (de) | 2001-09-21 | 2003-04-03 | Merck Patent Gmbh | Neuartiges hybrid-sol zur herstellung abriebfester sio2-antireflexschichten |
DE10360546A1 (de) | 2003-12-22 | 2005-07-14 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Leuchtstoff und Lichtquelle mit derartigem Leuchtstoff |
DE102006037730A1 (de) | 2006-08-11 | 2008-02-14 | Merck Patent Gmbh | LED-Konversionsleuchtstoffe in Form von keramischen Körpern |
US8133461B2 (en) | 2006-10-20 | 2012-03-13 | Intematix Corporation | Nano-YAG:Ce phosphor compositions and their methods of preparation |
DE102006054331A1 (de) | 2006-11-17 | 2008-05-21 | Merck Patent Gmbh | Leuchtstoffkörper basierend auf plättchenförmigen Substraten |
DE102006054330A1 (de) | 2006-11-17 | 2008-05-21 | Merck Patent Gmbh | Leuchtstoffplättchen für LEDs aus strukturierten Folien |
CN100999662A (zh) | 2006-12-29 | 2007-07-18 | 中国科学院长春应用化学研究所 | 一种蓝光激发的白光led用荧光粉的制备方法 |
-
2008
- 2008-10-13 DE DE102008051029A patent/DE102008051029A1/de not_active Withdrawn
-
2009
- 2009-09-02 JP JP2011530381A patent/JP5611960B2/ja not_active Expired - Fee Related
- 2009-09-02 US US13/123,758 patent/US8350465B2/en not_active Expired - Fee Related
- 2009-09-02 CN CN200980140453.1A patent/CN102186944B/zh not_active Expired - Fee Related
- 2009-09-02 WO PCT/EP2009/006356 patent/WO2010043287A1/de active Application Filing
- 2009-09-02 EP EP09778282A patent/EP2350231A1/de not_active Withdrawn
- 2009-09-02 KR KR1020117010538A patent/KR20110069151A/ko not_active Application Discontinuation
- 2009-10-12 TW TW098134545A patent/TW201024393A/zh unknown
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4093890A (en) * | 1976-05-13 | 1978-06-06 | U.S. Philips Corporation | Terbium-activated luminescent garnet material and mercury vapor discharge lamp containing the same |
GB1533507A (en) * | 1976-05-13 | 1978-11-29 | Philips Nv | Luminescent materials |
DE102004051519A1 (de) * | 2003-10-22 | 2005-05-25 | GE Medical Systems Global Technology Company, LLC, Waukesha | Terbium oder Lutetium enthaltende Szintillatorverbindungen mit erhöhter Beständigkeit gegenüber Strahlungsschaden |
US20050099786A1 (en) * | 2003-11-07 | 2005-05-12 | Ru-Shi Liu | Yellow phosphor material and white light-emitting device using the same |
EP1566426A2 (de) * | 2004-02-23 | 2005-08-24 | LumiLeds Lighting U.S., LLC | Lichtemittierende Vorrichtung, enthaltend einen wellenlängenkonvertierenden Leuchtstoff |
US20050205874A1 (en) * | 2004-03-19 | 2005-09-22 | Ru-Shi Liu | Phosphor material and white light-emitting device using the same |
WO2007144060A1 (de) * | 2006-06-12 | 2007-12-21 | Merck Patent Gmbh | Verfahren zur herstellung von granat-leuchtstoffen in einem pulsationsreaktor |
DE102007010719A1 (de) * | 2007-03-06 | 2008-09-11 | Merck Patent Gmbh | Leuchtstoffe bestehend aus dotierten Granaten für pcLEDs |
WO2008107062A1 (de) * | 2007-03-06 | 2008-09-12 | Merck Patent Gmbh | Leuchtstoffe bestehend aus dotierten granaten für pcleds |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8957575B2 (en) | 2011-07-05 | 2015-02-17 | Panasonic Intellectual Property Management Co., Ltd. | Rare earth aluminum garnet type phosphor and light-emitting device using the same |
WO2013005356A1 (ja) | 2011-07-05 | 2013-01-10 | パナソニック株式会社 | 希土類アルミニウムガーネットタイプ蛍光体およびこれを用いた発光装置 |
JP2014534306A (ja) * | 2011-10-17 | 2014-12-18 | グリレム アドヴァンスド マテリアルズ カンパニー リミテッドGrirem Advanced Materials Co.,Ltd. | Led赤色蛍光体及び該蛍光体を含有する発光デバイス |
EP2913379A4 (de) * | 2012-10-25 | 2016-06-01 | Force4 Corp | Thoriumdotierter garnetbasierter phosphor und lichtemittierende vorrichtung damit |
JP2015528042A (ja) * | 2012-10-25 | 2015-09-24 | フォース4 コーポレーション | トリウムがドープされたガーネット系蛍光体及びこれを用いた発光装置 |
US9732271B2 (en) | 2012-12-20 | 2017-08-15 | Panasonic Intellectual Property Management Co., Ltd. | Rare earth aluminum garnet-type inorganic oxide, phosphor and light-emitting device using same |
WO2014097527A1 (ja) | 2012-12-20 | 2014-06-26 | パナソニック株式会社 | 希土類アルミニウムガーネットタイプ無機酸化物、蛍光体及びこれを用いた発光装置 |
WO2014136407A1 (ja) | 2013-03-08 | 2014-09-12 | パナソニック株式会社 | 希土類アルミニウムガーネットタイプ無機酸化物、蛍光体及びこれを用いた発光装置 |
US9976080B2 (en) | 2013-03-08 | 2018-05-22 | Panasonic Intellectual Property Management Co., Ltd. | Rare earth aluminum garnet-type inorganic oxide, phosphor and light-emitting device using same |
CN104250555A (zh) * | 2013-06-27 | 2014-12-31 | 宁波升谱光电半导体有限公司 | 黄色荧光粉及其制备方法和使用该荧光粉的发光器件 |
WO2015045260A1 (ja) | 2013-09-30 | 2015-04-02 | パナソニックIpマネジメント株式会社 | 蛍光体及びこれを用いた発光装置、照明光源、照明装置 |
US9840666B2 (en) | 2013-09-30 | 2017-12-12 | Panasonic Intellectual Property Management Co., Ltd. | Phosphor having inorganic oxide with cerium and terbium activators, light-emitting device illumination light source, and illumination device using same |
US11050005B2 (en) | 2016-03-08 | 2021-06-29 | Panasonic Intellectual Property Management Co., Ltd. | Phosphor and light emitting device |
Also Published As
Publication number | Publication date |
---|---|
JP2012505269A (ja) | 2012-03-01 |
US20110279022A1 (en) | 2011-11-17 |
DE102008051029A1 (de) | 2010-04-15 |
EP2350231A1 (de) | 2011-08-03 |
CN102186944B (zh) | 2016-01-27 |
TW201024393A (en) | 2010-07-01 |
US8350465B2 (en) | 2013-01-08 |
KR20110069151A (ko) | 2011-06-22 |
JP5611960B2 (ja) | 2014-10-22 |
CN102186944A (zh) | 2011-09-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2115092B1 (de) | Leuchtstoffe bestehend aus dotierten granaten für pcleds | |
WO2010043287A1 (de) | Dotierte granat-leuchtstoffe mit rotverschiebung für pcleds | |
EP2616523B1 (de) | Silicophosphat-leuchtstoffe | |
EP2129740B1 (de) | Verfahren zur herstellung von leuchtstoffen basierend auf orthosilikaten für pcleds | |
EP2129741B1 (de) | VERFAHREN ZUR HERSTELLUNG VON LEUCHTSTOFFEN BESTEHEND AUS ORTHOSILIKATEN FÜR pcLEDs | |
EP2401342B1 (de) | Mit zirkonium und hafnium co-dotierte nitridosilikate | |
EP2576725B1 (de) | Leuchtstoffe | |
EP2596078B1 (de) | Aluminat-leuchtstoffe | |
EP2324096B1 (de) | Co-dotierte 1-1-2 nitride | |
DE102009032711A1 (de) | Co-dotierte Silicooxynitride | |
EP2625247B1 (de) | Mn-aktivierte leuchtstoffe | |
WO2011047757A1 (de) | Sm-aktivierte aluminat- und borat-leuchtstoffe | |
DE102010031914A1 (de) | Carbodiimid-Leuchtstoffe | |
EP2619283B1 (de) | Silicat-leuchtstoffe |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200980140453.1 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 09778282 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2009778282 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2011530381 Country of ref document: JP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20117010538 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13123758 Country of ref document: US |