WO2010032778A1 - 磁気記録媒体の製造方法 - Google Patents
磁気記録媒体の製造方法 Download PDFInfo
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- WO2010032778A1 WO2010032778A1 PCT/JP2009/066234 JP2009066234W WO2010032778A1 WO 2010032778 A1 WO2010032778 A1 WO 2010032778A1 JP 2009066234 W JP2009066234 W JP 2009066234W WO 2010032778 A1 WO2010032778 A1 WO 2010032778A1
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/855—Coating only part of a support with a magnetic layer
Definitions
- the present invention relates to a method for manufacturing a magnetic recording medium such as a hard disk.
- DTR Discrete Track Recording Media
- BPM Bit Patterned Media
- the magnetic recording medium is required to have a smooth surface so that the magnetic head floats on the surface of the magnetic recording medium during recording and reproduction. Therefore, after the patterning, a smoothing process for filling the space between the magnetic films with a nonmagnetic material is necessary.
- a method of irradiating a processing object having a resist layer on a magnetic film with ions of a processing gas (ion beam) is known (Patent Document 1 below). 2).
- the portion covered with the resist layer is protected and is not demagnetized, but the target element, which is a constituent atom of the processing gas, is injected into the processing portion where the resist layer is not disposed, thereby demagnetizing. Accordingly, a non-magnetic part is formed in the magnetic film along the opening pattern of the resist layer, and the part where the magnetism remains (magnetic part) is separated by the non-magnetic part, and the magnetic recording medium It becomes a recording part.
- the present invention provides an ion shielding portion on a magnetic film of a processing object having a substrate and a magnetic film disposed on the surface of the substrate, and a film more than the ion shielding portion.
- a process including disposing a resist having a thin ion permeable portion, accelerating ions of a processing gas, allowing constituent elements of the processing gas to pass through the ion permeable portion, and positioning the ion permeable portion of the magnetic film
- the present invention relates to a method of manufacturing a magnetic recording medium, wherein the acceleration voltage is applied to the film thickness of the ion permeable portion so that the depth from the surface of the magnetic film where the amount of the constituent element implanted becomes maximum is constant.
- This is a method of manufacturing a magnetic recording medium that is changed in accordance with the change in the number.
- the present invention is a method for manufacturing a magnetic recording medium, wherein the accelerating voltage is changed so that the depth from the surface of the magnetic film at which the amount of the constituent element implanted is maximized is moved. .
- the present invention is a method of manufacturing a magnetic recording medium, wherein the acceleration voltage is changed so that the depth from the surface of the magnetic film at which the implantation amount of the constituent element is maximized moves from the substrate side to the resist side. This is a method of manufacturing a magnetic recording medium.
- the present invention is a method of manufacturing a magnetic recording medium, wherein the acceleration voltage is changed so that the depth from the surface of the magnetic film at which the implantation amount of the constituent element is maximized moves from the resist side to the substrate side. This is a method of manufacturing a magnetic recording medium.
- the peak depth at which the target element implantation amount is maximized can be set to a set depth, so that the magnetic film can be made non-magnetic uniformly from the surface to the bottom. Since the magnetic part (recording part) where information is written / read is separated, the contrast of the magnetic pattern is good and no writing blur occurs.
- Sectional drawing which shows an example of the manufacturing apparatus used for this invention (A) to (c): Cross-sectional views schematically showing the demagnetization process Sectional view showing an example of a magnetic recording medium
- Reference numeral 10 in FIG. 1 shows an example of a manufacturing apparatus used in the present invention.
- the manufacturing apparatus 10 includes a vacuum chamber 11 and an ion generator 15.
- the internal space of the ion generator 15 is connected to the internal space of the vacuum chamber 11 through a discharge port (not shown).
- a gas supply system 16 is connected to the ion generator 15, and a vacuum exhaust system 19 is connected to the vacuum chamber 11.
- the inside of the vacuum chamber 11 is evacuated by the evacuation system 19, a processing gas such as N 2 gas is supplied from the gas supply system 16 into the ion generator 15, and a high frequency antenna (not shown) in the ion generator 15 is provided. Is energized, the process gas is ionized in the ion generator 15 to generate positively or negatively charged process gas ions.
- a processing gas such as N 2 gas is supplied from the gas supply system 16 into the ion generator 15, and a high frequency antenna (not shown) in the ion generator 15 is provided. Is energized, the process gas is ionized in the ion generator 15 to generate positively or negatively charged process gas ions.
- Accelerator 20 is arranged at a location facing the discharge port inside vacuum chamber 11.
- the acceleration device 20 has one or a plurality of acceleration electrodes 21a to 21d, and the acceleration electrodes 21a to 21d are arranged along the direction in which the processing gas ions are emitted.
- the acceleration electrodes 21 a to 21d are connected to the acceleration power supply device 22.
- the acceleration power supply device 22 includes a control device 29 and a power supply source 25.
- the power supply source 25 applies voltages having different polarities or magnitudes as acceleration voltages to the adjacent acceleration electrodes 21a to 21d. Since the processing gas ions are charged, they are accelerated by an accelerating electric field while flying inside the acceleration device 20 and then released into the vacuum chamber 11.
- the power supply source 25 is connected to the control device 29.
- the control device 29 is configured to change the acceleration energy of the processing gas ions by changing the acceleration voltage applied by the power supply source 25 to the acceleration device 20 based on the set information.
- symbol 40 of Fig.2 (a) has shown the process target object.
- the processing object 40 includes a substrate 41, a magnetic film 44 formed on one or both surfaces of the substrate 41, and a protective film 46 formed on the surface of the magnetic film 44.
- a base film may be provided between the substrate 41 and the magnetic film 44.
- the processing unit 43 to be demagnetized and the non-processing unit 42 to be left non-magnetized are determined in advance.
- the resist 49 is transferred onto the magnetic film 44 by using a stamper, and an ion shielding part 47 for shielding ions is arranged on the non-processing part 42, which is made of a thick film part of the resist 49.
- an ion transmissive portion 48 that is made of a thin film portion thinner than the ion shielding portion 47 of the resist 49 and transmits ions is disposed (FIG. 2B).
- the film thickness of the magnetic film 44 is determined, and the energy for injecting the target element necessary for demagnetization of the processing unit 43 is determined from the film thickness and the thickness and area of the ion transmission unit 48 on the processing unit 43.
- the ion implantation amount for the processing unit 43 to demagnetize is determined from the relationship between the magnetic property change amount of the magnetic film 44 obtained in advance and the implanted ion amount.
- the ion permeable portion 48 and the ion shielding portion 47 are reduced in film according to the ion energy and the ion incidence time (ion implantation time).
- the amount of implantation of the target element necessary for demagnetizing the processing unit 43 is known, and the film thickness reduction amount of the ion transmission unit 48 when the amount is implanted is obtained in advance.
- Reference numerals T 0 and T 1 in FIGS. 2B and 2C are film thicknesses of the ion permeable portion 48, and reference T 0 is an initial film at the start of the demagnetization process before being etched with process gas ions.
- the thickness, T 1 is the final film thickness at the end of the demagnetization process in which a necessary amount of the target element is implanted. Assuming that the depth from the surface of the magnetic film 44 to the position where the implantation amount of the target element is maximum is “peak depth”, the peak depth is the lower limit and the same distance as the film thickness of the magnetic film 44 is the upper limit. It can be changed within the range.
- Symbols D 0 and D 1 in FIGS. 2B and 2C denote an initial peak depth which is a peak depth at the start of demagnetization and a final peak which is a peak depth when a necessary amount of the target element is injected. Depth is shown.
- the initial peak depth D 0 is equal to the final peak depth D 1 , and the peak depth is constant, the initial peak depth D 0 is larger than the final peak depth D 1 , and the elapsed time of ion implantation
- the initial peak depth D 0 moves from the substrate 41 side to the resist 49 side, the initial peak depth D 0 is smaller than the final peak depth D 1 , and the peak depth position changes according to the elapsed time of ion implantation. In some cases, the substrate moves from the 49 side to the substrate 41 side.
- V 1 is obtained and set in the control device 29.
- a vacuum atmosphere is formed in the vacuum chamber 11, and the processing object 40 in the state of FIG. 2B is held in the substrate holding holder 18 and carried into the vacuum chamber 11, and the surface on which the resist 49 is disposed is accelerated. It faces the device 20 (FIG. 1). Processing gas ions are generated in a state where the vacuum atmosphere in the vacuum chamber 11 is maintained and the vacuum chamber 11 is placed at the ground potential.
- the control device 29 applies the initial acceleration voltage V 0 to the acceleration device 20 to start the demagnetization process, changes the acceleration voltage one or more times until the required amount of the target element has been injected, and changes the acceleration voltage. Close to the final acceleration voltage V 1 , the final acceleration voltage V 1 is applied when the required amount of the target element has been injected, and the demagnetization process is terminated.
- the acceleration voltage may be decreased stepwise or continuously.
- the speed at which the acceleration voltage is reduced is a value corresponding to the film reduction, and is a constant value.
- the acceleration voltage when the peak depth is constant is reduced. It is necessary to reduce the acceleration voltage at a speed larger than the speed.
- the acceleration voltage is increased beyond the implantation depth corresponding to the resist film reduction amount. That is, when the peak depth moves from the resist 49 side to the substrate 41 side (D 0 ⁇ D 1 ), the speed at which the acceleration voltage is reduced is higher than the speed at which the acceleration voltage is reduced when the peak depth is constant.
- the acceleration voltage can be made constant or constant.
- the acceleration voltage can be increased according to the elapsed time of ion implantation. A range in which the peak depth does not exceed the thickness of the magnetic film 44 is preferable.
- the peak depths D 0 and D 1 from the surface of the magnetic film 44 may be changed from increase to decrease, or from decrease to increase.
- the acceleration voltage having the set peak depth is examined and set in the control device 29.
- the application of the acceleration voltage is stopped or the processing object 40 is covered with a shutter or the like, and the processing gas ion irradiation to the processing object 40 is stopped.
- the processing object 40 is carried out of the vacuum chamber 11 and the resist 49 is removed. If necessary, the protective film 46 is removed and newly formed, or the protective film 46 is grown to increase the film thickness, and another layer such as a lubricating layer is formed on the protective film 46 to form the magnetic recording medium 50. (FIG. 3).
- reference numeral 51 in FIG. 3 is composed of the non-processing part 42 remaining without being demagnetized.
- the magnetic part is shown.
- Reference numeral 52 in the figure denotes a nonmagnetic portion comprising the processing portion 43 that has been made nonmagnetic.
- the magnetic part 51 is divided into a plurality of parts by a non-magnetic part 52, and each magnetic part 51 becomes a recording part in which information is written / read.
- the present invention is not limited to this, and the magnetic film 44 may be formed on both surfaces of the substrate 41. In that case, demagnetization may be performed on both sides simultaneously or on each side.
- the target element is preferably, for example, one or more selected from the group of O, B, P, F, N, H, C, Kr, Ar, and Xe. Two or more kinds of these atoms may be implanted.
- the processing gas one containing one or more of the above-mentioned target elements in the chemical structure is used.
- the structure of the magnetic film 44 is not particularly limited as long as it contains a magnetic material such as Fe, Co, or Ni.
- a magnetic material such as Fe, Co, or Ni.
- an artificial lattice film metal laminated film
- Co / Pd, Co / Pt, Fe / Pd, or Fe / Pt, or a CoPt (Cr) alloy can be used.
- a nonmagnetic CrMo underlayer and a ferromagnetic CoCrPtTa magnetic layer may be used.
- the film thickness of the ion shielding part 47 is not particularly limited, but is increased from the start to the end of the demagnetization process so that the target element does not reach the non-processed part.
- the ion permeable part 48 is made thin enough to allow the target element to permeate and reach the processing part.
- the protective film 46 is not particularly limited, but is selected from the group consisting of carbon such as DLC (diamond-like carbon), hydrogenated carbon, nitrogenated carbon, silicon carbide (SiC), SiO 2 , Zr 2 O 3 , and TiN. Any one or more protective materials may be used.
- carbon such as DLC (diamond-like carbon), hydrogenated carbon, nitrogenated carbon, silicon carbide (SiC), SiO 2 , Zr 2 O 3 , and TiN. Any one or more protective materials may be used.
- the stamper is not particularly limited, but is, for example, a plate shape in which concave portions whose planar shape is substantially the same as that of the non-processing portion 42 are formed on the surface at the same interval as the non-processing portion 42.
- a method for forming the resist 49 using a stamper will be described below.
- the stamp 49 and the processing object 40 are pressed with the resist 49 interposed therebetween.
- the resist 49 contains a thermoplastic resin, it is heated while being pressed.
- an ion shielding portion 47 made of a thick film of the resist 49 is formed on the non-processing portion 42.
- the resist 49 is not completely pushed away from the convex portion, and a part of the resist 49 remains, and an ion transmission portion 48 made of a thin film of the resist 49 is formed on the processing portion 43.
- the resist 49 contains a thermosetting resin such as an epoxy resin
- the resist 49 is cured by heating.
- the resist 49 contains an ultraviolet curable resin such as an acrylate
- the resist 49 is cured by ultraviolet irradiation, and when it contains a thermoplastic resin, it is solidified by cooling. .
- the stamper surface has lower adhesion to the cured (or solidified) resist 49 than the object 40 to be processed.
- the resist 49 in which the ion shielding part 47 and the ion permeable part 48 are formed is formed. It remains on the processing object 40.
- the resist 49 on the processing unit 43 is etched halfway by the photolithography method without using a stamper, so that the ion transmission unit 48 is left, and the resist 49 on the non-processing unit 42 is left unetched to form the ion shielding unit 47.
- a stamper is easier than the photolithography method because the manufacturing process is simpler, and the required amount of materials such as the resist 49 and the etching solution is small, which is economical.
- the substrate 41 is not particularly limited as long as it is a nonmagnetic substrate.
- a glass substrate, a resin substrate, a ceramic substrate, an aluminum substrate, or the like is used.
- the manufacturing method of the present invention can be widely applied to a method of manufacturing a magnetic recording medium in which a part of a magnetic film is made non-magnetic and a plurality of magnetic parts are separated.
- DTR Discrete Track Recording Media
- BPM Battery-Coupled Media
Abstract
Description
平滑化の工程を無くし、工程を簡素化するため、磁性膜上にレジスト層を配置した処理対象物に、処理ガスのイオン(イオンビーム)を照射する方法が公知である(下記特許文献1、2を参照)。
しかし、原板(スタンパ)等でレジストを形成すると、処理部上にもレジストの薄膜が残り、その薄膜がイオンビームでエッチングされると、加速電圧が一定でもピーク深さが底面側へ移動してしまう。ピーク深さが底面側へ移動すると、磁性膜の表面部分等が十分に非磁性化されず、磁性部が分離されない。磁性部が分離されないと、情報を書き込む際に書きにじみと呼ばれる現象が起こる。
本発明は磁気記録媒体の製造方法であって、前記構成元素の注入量が最大となる前記磁性膜表面からの深さが一定になるように、前記加速電圧を、前記イオン透過部の膜厚の変化に応じて変化させる磁気記録媒体の製造方法である。
本発明は磁気記録媒体の製造方法であって、前記構成元素の注入量が最大となる前記磁性膜表面からの深さが移動するように前記加速電圧を変化させる磁気記録媒体の製造方法である。
本発明は磁気記録媒体の製造方法であって、前記構成元素の注入量が最大となる前記磁性膜表面からの深さが、前記基板側から前記レジスト側へ移動するよう前記加速電圧を変化させる磁気記録媒体の製造方法である。
本発明は磁気記録媒体の製造方法であって、前記構成元素の注入量が最大となる前記磁性膜表面からの深さが、前記レジスト側から前記基板側へ移動するよう前記加速電圧を変化させる磁気記録媒体の製造方法である。
この製造装置10は、真空槽11と、イオン発生装置15とを有している。
イオン発生装置15は不図示の放出口を介して内部空間が真空槽11の内部空間に接続されている。イオン発生装置15にはガス供給系16が接続され、真空槽11には真空排気系19が接続されている。
加速電極21a~21dは加速電源装置22に接続されている。加速電源装置22は、制御装置29と、電力供給源25を有しており、電力供給源25は、互いに隣接する加速電極21a~21dに極性又は大きさの異なる電圧を加速電圧として印加する。処理ガスイオンは帯電しているから、加速装置20の内部を飛行する間に、加速電界により加速されてから、真空槽11内部に放出される。
図2(a)の符号40は処理対象物を示している。処理対象物40は基板41と、基板41の片面又は両面に形成された磁性膜44と、磁性膜44の表面上に形成された保護膜46とを有している。なお、基板41と磁性膜44の間には、下地膜を設けてもよい。
イオン透過部48とイオン遮蔽部47にイオンが入射すると、イオンエネルギーとイオンの入射時間(イオン注入時間)に従って、イオン透過部48とイオン遮蔽部47は膜減りする。処理部43を非磁性化するために必要な目的元素の注入量は分かっており、その量を注入した時の、イオン透過部48の膜厚減少量は予め求めておく。
磁性膜44表面から、目的元素の注入量が最大となる位置までの深さを「ピーク深さ」とすると、ピーク深さは、ゼロが下限、磁性膜44の膜厚と同じ距離が上限となる範囲内で変更可能である。
即ち、磁性膜44表面からのピーク深さを一定にする場合(D0=D1)、イオン注入によって消失したレジスト膜の膜厚(膜減り量)が増加すると、ピーク深さのレジスト49表面からの距離は短くなるから、レジスト膜表面からのピーク深さの位置が浅くなり、ピーク深さが一定になるように、膜減り量の増加に対応して加速電圧を小さくする。
膜減り量の速度(膜減り量/時間)が一定のときは、加速電圧を小さくする速度(加速電圧を小さくした値/時間)は膜減り量に応じた値であり、一定値であるが、ピーク深さが磁性膜44の底面側(基板41側)から磁性膜44の表面側へ移動させる場合は(D0>D1)、ピーク深さを一定にする場合の加速電圧を小さくする速度よりも、大きな速度で加速電圧を小さくする必要がある。
即ち、ピーク深さがレジスト49側から基板41側へ移動する場合(D0<D1)は、加速電圧を小さくする速度を、ピーク深さを一定にする場合に加速電圧を小さくする速度よりも、小さくするか、又は、加速電圧を一定にすることができる。更に又、加速電圧を、イオン注入の経過時間に従って、大きくすることもできる。ピーク深さが磁性膜44の膜厚を超えない範囲がよい。
ピーク深さD0、D1を一定にする場合には、そのピーク深さD0、D1を磁性膜44膜厚方向中央にすれば、非磁性化の効率が最も高い。磁性膜44表面からのピーク深さD0、D1を変える場合は、目的元素が注入される領域が、磁性膜44の表面から底面まで移動するようにする。
スタンパを用いたレジスト49の形成方法を以下に説明する。スタンパと処理対象物40でレジスト49を挟んで押圧する。レジスト49が熱可塑性樹脂を含有する場合、押圧しながら加熱する。
Claims (5)
- 基板と、前記基板表面に配置された磁性膜とを有する処理対象物の、前記磁性膜上に、
イオン遮蔽部と、前記イオン遮蔽部よりも膜厚が薄いイオン透過部とを有するレジストを配置し、
処理ガスのイオンを加速し、前記処理ガスの構成元素を、前記イオン透過部を透過させ、前記磁性膜の前記イオン透過部が位置する処理部に前記構成元素を注入し、非磁性化させる磁気記録媒体の製造方法であって、
前記処理ガスのイオンを加速する加速電圧を変化させて、前記処理部を非磁性化させる磁気記録媒体の製造方法。 - 前記構成元素の注入量が最大となる前記磁性膜表面からの深さが一定になるように、前記加速電圧を、前記イオン透過部の膜厚の変化に応じて変化させる請求項1記載の磁気記録媒体の製造方法。
- 前記構成元素の注入量が最大となる前記磁性膜表面からの深さが移動するように前記加速電圧を変化させる請求項1記載の磁気記録媒体の製造方法。
- 前記構成元素の注入量が最大となる前記磁性膜表面からの深さが、前記基板側から前記レジスト側へ移動するよう前記加速電圧を変化させる請求項3記載の磁気記録媒体の製造方法。
- 前記構成元素の注入量が最大となる前記磁性膜表面からの深さが、前記レジスト側から前記基板側へ移動するよう前記加速電圧を変化させる請求項3記載の磁気記録媒体の製造方法。
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- 2009-09-17 MY MYPI2011001207A patent/MY154187A/en unknown
- 2009-09-17 KR KR1020117008808A patent/KR101294392B1/ko active IP Right Grant
- 2009-09-17 WO PCT/JP2009/066234 patent/WO2010032778A1/ja active Application Filing
- 2009-09-17 JP JP2010529786A patent/JP5318109B2/ja active Active
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2011
- 2011-03-16 US US13/049,250 patent/US20110212272A1/en not_active Abandoned
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JP2009116979A (ja) * | 2007-11-08 | 2009-05-28 | Hitachi Global Storage Technologies Netherlands Bv | 磁気記録媒体の製造方法 |
Also Published As
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JPWO2010032778A1 (ja) | 2012-02-09 |
CN102160116B (zh) | 2013-03-27 |
MY154187A (en) | 2015-05-15 |
KR101294392B1 (ko) | 2013-08-08 |
KR20110069109A (ko) | 2011-06-22 |
US20110212272A1 (en) | 2011-09-01 |
CN102160116A (zh) | 2011-08-17 |
JP5318109B2 (ja) | 2013-10-16 |
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