WO2009123158A1 - 電気電子機器用銅合金材料および電気電子部品 - Google Patents
電気電子機器用銅合金材料および電気電子部品 Download PDFInfo
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- WO2009123158A1 WO2009123158A1 PCT/JP2009/056575 JP2009056575W WO2009123158A1 WO 2009123158 A1 WO2009123158 A1 WO 2009123158A1 JP 2009056575 W JP2009056575 W JP 2009056575W WO 2009123158 A1 WO2009123158 A1 WO 2009123158A1
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/10—Alloys based on copper with silicon as the next major constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/02—Contact members
- H01R13/03—Contact members characterised by the material, e.g. plating, or coating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention relates to a copper alloy material for electrical and electronic equipment and electrical and electronic parts.
- Parts for electrical and electronic equipment such as spring contact materials for connectors, are required to have characteristics such as strength, stress relaxation resistance, conductivity, bending workability, heat resistance, plating adhesion, and migration characteristics.
- phosphor bronze has been widely used.
- phosphor bronze cannot completely satisfy the above-mentioned characteristics, and beryllium copper having higher strength and excellent stress relaxation characteristics has been widely used.
- beryllium copper is very expensive and metal beryllium is treated as an environmentally hazardous substance. Therefore, a Corson alloy (Cu—Ni—Si based alloy) in which nickel (Ni) and silicon (Si) are added to copper has attracted attention as an alloy that can replace these materials.
- Corson alloy is a precipitation-hardening type alloy in which fine particles of Ni 2 Si intermetallic compound are dispersed and precipitated in Cu and strengthened. So far, the addition amount of Ni and Si and Ni / Si are specified, and high strength In addition, there are reports on achieving high conductivity (see Patent Documents 1 and 2).
- the ratio of mass% of the content of Ni and Si that is, the value of Ni (mass%) / Si (mass%) (hereinafter referred to as Ni / Si) mainly contributes to strengthening Ni 2. It is said that the range is centered on 4.2, which is the stoichiometric ratio of the Si compound.
- Ni / Si is a Ni 2 Si stoichiometric ratio or Ni 2 Si stoichiometric ratio, while making the Ni excess value better than the Ni 2 Si stoichiometric ratio.
- the scope definition was wide and ambiguous.
- many studies have been made to maintain a balance between strength and electrical conductivity, but the conditions for having high strength and good bending workability have not been sufficiently studied.
- this invention makes it a subject to provide the copper alloy material for electrical and electronic equipment which has high intensity
- Ni is contained in an amount of 2.0% by mass to less than 3.3% by mass
- Si content is in the range of 2.8 to 3.8 in terms of the mass ratio of Ni to Si (Ni / Si). Containing 0.01 to 0.2% by mass of Sn, 0.05 to 1.5% by mass of Sn, 0.2 to 1.5% by mass of Zn, and the balance being Cu and inevitable impurities.
- a copper alloy material for electrical and electronic equipment wherein the value of R is 0 mm or more and 0.1 mm or less, (2) Ni is contained in an amount of 2.0% by mass to less than 3.3% by mass, and the Si content is in the range of 2.8 to 3.8 in terms of the mass ratio of Ni to Si (Ni / Si).
- Copper alloy material for electronic equipment (3) The cast ingot is subjected to hot rolling, dough (cold) rolling, and solution treatment, followed by intermediate (cold) rolling at a rolling rate of 5 to 50%, 0 at 400 to 600 ° C.
- Item (1) or (2) which is produced by performing aging treatment for 5 to 12 hours, finish (cold) rolling at a rolling rate of 30% or less, and low-temperature annealing treatment in this order.
- Copper alloy material for electrical and electronic equipment (4) The cast ingot is subjected to hot rolling, dough (cold) rolling, and solution treatment, followed by aging treatment at 300 to 400 ° C. for 0.5 to 8 hours, and 425 to Item (1) or (2) is characterized by being manufactured by aging at 600 ° C.
- the cast ingot is subjected to hot rolling, dough (cold) rolling, and solution treatment, followed by intermediate (cold) rolling at a rolling rate of 5 to 50%, 0 at 300 to 400 ° C. .Aging treatment for 5 to 8 hours, aging treatment at 425 to 600 ° C.
- Ni is contained in an amount of 2.0% by mass or more and less than 3.3% by mass, and the Si content is in the range of 2.8 to 3.8 in terms of the mass ratio of Ni to Si (Ni / Si). Containing 0.01 to 0.2% by mass of Sn, 0.05 to 1.5% by mass of Sn, 0.2 to 1.5% by mass of Zn, and the balance being Cu and inevitable impurities.
- An electrical and electronic component obtained by processing a copper alloy material for electrical and electronic equipment, wherein the copper alloy material contains a total of 0.005 to 2.0% by mass of the remainder and Cu and inevitable impurities.
- the electrical and electronic component is characterized by having a thickness of 0 mm to 0.1 mm.
- the copper alloy material for electrical and electronic equipment of the present invention has higher conductivity than conventional phosphor bronze and has conductivity equal to or higher than beryllium copper (C17200, C17530), and has sufficient conductivity for connector applications. In addition, it has high strength and extremely good bending workability. In addition, since the electrical and electronic component of the present invention is obtained by processing the copper alloy material for electrical and electronic equipment, it has a high strength and is extremely good in bending required for a component for connector use. Has processability.
- the Ni content 2.0% by mass or more and less than 3.3% by mass, a sufficiently high bending strength can be achieved at the same time while having sufficient electrical conductivity and high strength. . If the Ni content is less than the lower limit, sufficient strength cannot be obtained. Moreover, when Ni content exceeds an upper limit, it will become high intensity
- Ni / Si mass ratio of content
- the tensile strength due to aging treatment for precipitation density is improved in the Ni 2 Si and Ni 3 Si 2 can be improved.
- the crystal grain size at the time of solution treatment can be controlled to be small by increasing the amount of dissolved Si, it also works well in bending workability. If it is larger than the upper limit, the required effect of improving the aging strength cannot be obtained.
- a more preferable range is 3.0 to 3.5 with Ni / Si centering on 3.3. In this range, a material having a good balance of tensile strength, electrical conductivity, and bending workability can be obtained.
- Mg improves the stress relaxation resistance, but the reason for limiting the content to 0.01 to 0.2% by mass is that when the content is less than 0.01% by mass, the stress relaxation resistance is not improved. This is because if it exceeds 2% by mass, bending workability is adversely affected.
- the Mg content is preferably 0.05 to 0.15% by mass.
- Sn is interrelated with Mg and further improves the stress relaxation resistance.
- the reason why the content is specified to be 0.05 to 1.5% by mass is that if the content is less than 0.05% by mass, the effect cannot be sufficiently obtained, and if the content exceeds 1.5% by mass, the conductivity decreases. is there.
- the Sn content is preferably 0.1 to 0.7% by mass.
- Zn slightly improves the bending workability.
- the Zn content Preferably, by defining the Zn content to be 0.2 to 1.5% by mass, bending workability at a level that causes no practical problems even when Mg is added up to 0.2% by mass is obtained.
- Zn improves the adhesion and migration characteristics of Sn plating and solder plating. If the Zn content exceeds 1.5% by mass, the electrical conductivity is lowered.
- the Zn content is more preferably 0.3 to 1.0% by mass.
- 0.005 to 2.0 mass% in total of one or more of Ag, Co, and Cr may be contained.
- Ag improves heat resistance and strength, and at the same time, prevents coarsening of crystal grains and improves bending workability. If the amount of Ag is less than 0.005% by mass, the effect cannot be sufficiently obtained, and even if added over 0.3% by mass, there is no adverse effect on the characteristics, but the cost increases. From these viewpoints, the Ag content is set to 0.005 to 0.3 mass%.
- Co like Ni, forms a compound with Si to improve the strength. If the Co content is less than 0.05% by mass, the effect cannot be sufficiently obtained.
- Co content exceeds 2.0% by mass, crystallization / precipitates that do not contribute to the strength are present even after the solution treatment, and bending is performed. Deteriorates. Cr precipitates as a second phase with Ni and Si and is effective in controlling the crystal grain size. If it is less than 0.05% by mass, the effect cannot be sufficiently obtained, and if it exceeds 1.0% by mass, the bending workability deteriorates. When two or more of Ag, Co, and Cr are added, the content is determined in the range of 0.005 to 2.0 mass% depending on the required characteristics.
- the copper alloy material for electrical and electronic equipment of the present invention is preferably manufactured by a process of performing intermediate rolling, aging treatment, finish rolling, and low-temperature annealing treatment after casting, hot rolling, dough rolling, and solution treatment. It is a thing.
- the shape of the copper alloy material for electrical and electronic equipment of the present invention is not particularly limited, and examples thereof include a plate, a strip, a wire, a bar, and a foil.
- the preferable manufacturing method of the copper alloy material of this invention is demonstrated in detail.
- a method for producing a copper alloy plate or a copper alloy strip will be described in detail as a representative example.
- casting is performed by a general DC method (Direct Chill Casting) or the like.
- hot rolling is performed immediately after the ingot is homogenized at a temperature of 850 to 1000 ° C. for 0.5 to 12 hours and then at a temperature of 700 to 950 ° C. It is preferable to cool with water.
- the oxide film is chamfered and then cold rolled.
- this cold rolling is referred to as dough rolling.
- intermediate rolling and finish rolling are performed to a plate thickness that provides a predetermined processing rate.
- Solution treatment is performed at a material temperature of 700 to 880 ° C. After holding for about 3 to 60 seconds, cooling is performed at a cooling rate of 15 ° C./second or more (more preferably 30 ° C./second or more) to prevent precipitation. It is preferable to do this.
- the solution treatment temperature is lower than 700 ° C., a sound recrystallized structure is not obtained, and the bending workability is adversely affected. Further, the amount of Ni and Si dissolved becomes insufficient, and Ni during aging treatment -There is a problem that the yield strength cannot be obtained due to insufficient precipitation of Si-based precipitates.
- the solution treatment temperature is higher than 880 ° C., the recrystallized grains become coarse, resulting in a decrease in strength, anisotropy, and a deterioration in bending workability.
- Intermediate rolling is cold rolling for the purpose of improving tensile strength and proof stress in aging treatment.
- dislocations are introduced into the copper alloy matrix, but some of them function as heterogeneous nucleation sites for Ni-Si compounds in the aging treatment of the next process, and the compounds form densely and finely.
- the effect of increasing the precipitation density by controlling Ni / Si is further improved.
- Intermediate rolling is preferably introduced in order to improve the aging strength, but even if the rolling rate is too high, the effect of improving the aging strength is saturated and the bending workability is deteriorated. Therefore, it is preferable to perform the intermediate rolling at a rolling rate of 5 to 50%.
- Ni 2 Si and Ni 3 Si 2 compounds are uniformly dispersed and precipitated in the copper matrix phase to improve strength and conductivity. It is preferable to use a batch furnace and hold the material at a material temperature of 400 to 600 ° C. for 0.5 to 12 hours. When the substantial temperature is lower than 400 ° C., it takes a very long time to obtain a sufficient precipitation amount of the Ni—Si compound, or the proof stress and the conductivity are insufficient. When the actual temperature is higher than 600 ° C., the Ni—Si compound is coarsened, so that sufficient proof stress cannot be obtained. In addition, the aging treatment is carried out by aging the material at an actual temperature of 300 to 400 ° C.
- the intermediate rolling in the above-described process may not be performed, but the strength can be further improved by performing the intermediate rolling.
- Finish rolling is cold rolling for the purpose of improving proof stress. If the proof strength after aging is sufficient, finish rolling and subsequent low-temperature annealing need not be introduced. If the rolling rate by finish rolling is too high, the bending workability deteriorates and the stress relaxation resistance is deteriorated. Therefore, the rolling rate is preferably 30% or less.
- Low temperature annealing is performed for the purpose of restoring elongation, bending workability and spring limit value while maintaining strength to some extent. If the solid temperature during the low-temperature annealing is too high, recrystallization occurs and the yield strength is lowered. Therefore, it is preferable to perform annealing at a solid temperature of 300 to 600 ° C. for a short time of 5 to 60 seconds. When the solid temperature is lower than 300 ° C., the elongation, bending workability and recovery of the spring limit value are insufficient, and when the solid temperature is higher than 600 ° C., the strength is reduced.
- the electrical / electronic component of the present invention can be obtained by appropriately processing the copper alloy material for electrical / electronic equipment.
- This processing method is not particularly limited, and a desired part shape may be formed by a conventional method, for example, plastic processing such as press processing.
- Example 1 A copper alloy having the composition shown in Table 1 was melted and cast by the DC method to obtain an ingot having a thickness of 30 mm, a width of 100 mm, and a length of 150 mm. Next, these ingots were heated to 900 ° C., held at this temperature for 1 hour, hot-rolled to a thickness of 12 mm, and quickly cooled. Next, both sides were cut by 1.5 mm each to remove the oxide film, and then processed to a thickness of 0.25 to 0.50 mm by rolling the dough. Thereafter, solution treatment was performed under various conditions of 750 to 880 ° C., and immediately cooled at a cooling rate of 15 ° C./second or more. Next, intermediate rolling at a rolling rate of 5 to 50% was performed.
- an aging treatment was performed at 450 to 550 ° C. for 2 hours in an inert gas atmosphere, and then finish rolling with a rolling rate of 30% or less was performed, so that the final plate thickness was adjusted to 0.20 mm.
- finish rolling the following various properties were evaluated using materials subjected to a low-temperature annealing treatment at 500 ° C. for 30 seconds.
- the unit of the component (Ni, Si, etc.) of the copper alloy shown in each table is mass% (mass%) except for the value of Ni / Si (no unit) which is a mass ratio. is there.
- the ratio of the bending radius (R) to the plate thickness (t) was defined as R / t.
- R / t The ratio of the bending radius (R) to the plate thickness (t) was defined as R / t.
- Examples 1 to 10 of the present invention show excellent characteristics of achieving both high tensile strength and excellent bending workability.
- the conductivity was 35% IACS or more
- the tensile strength was 750 MPa or more
- the bending workability was 0 or more and 0.5 or less in terms of R / t.
- Ni / Si is within the specified range, but the strength is insufficient because the amount of Ni is less than the lower limit.
- Comparative Examples 13, 15 to 20 and 23 since Ni / Si is larger than the upper limit value, the strength is lower than that of the present invention corresponding to the composition, and bending workability is large because the crystal grain size is large. Declined.
- Table 2 shows the results of investigating the effect of changing the steps after solution treatment using the ingots of Nos. 4, 15 and 22. The numbers shown in Table 2 are described with a child number such as 4-2 when the manufacturing process is changed using, for example, an ingot of 4.
- Inventive Example 4-2 and Comparative Examples 15-2 and 22-2 are aging treatments at 350 ° C. for 2 hours, followed by aging treatment at 500 ° C. for 2 hours. It was produced by performing a stage aging treatment.
- Invention Example 4-3 and Comparative Examples 15-3 and 22-3 are aging treatments at 350 ° C. for 2 hours without intermediate rolling immediately before the aging treatment in the production process of Example 1. Later, it was prepared by performing a two-stage aging treatment at 500 ° C.
- Reference Example 4-4 is an example in which the aging treatment was performed only at one stage for 2 hours at 500 ° C. without performing the intermediate rolling immediately before the aging treatment in the production process of Example 1, and the item (3)
- the invention according to is a comparative example.
- the characteristics were examined for each copper alloy plate in the same manner as in Example 1 by (1) crystal grain size, (2) tensile strength, (3) conductivity, and (4) bending workability. The results are shown in Table 2.
- Inventive Examples 4-2 and 4-3 are respectively Nos. A strength higher than 4 and an excellent bending workability are achieved.
- Comparative Examples 15-2 and 15-3 since Ni / Si is larger than the upper limit value, the effect of the process change cannot be obtained as compared with Invention Examples 4-2 and 4-3. The bending workability was lowered due to the low crystal grain size.
- Comparative Examples 22-2 and 22-3 since Ni / Si is less than the lower limit, the electrical conductivity is low, and the effect of changing the process cannot be obtained as compared with Inventive Examples 4-2 and 4-3. Was low.
- Reference Example 4-4 is an example in which the finish rolling ratio was increased in order to improve the strength, but rather the strength decreased and the bending workability deteriorated.
- the copper alloy material for electrical and electronic equipment of the present invention has high strength and is excellent in bending workability, it can be suitably used for parts for electrical and electronic equipment, particularly spring contacts of connectors.
- the electrical / electronic component of the present invention is obtained by processing the copper alloy material for electrical / electronic equipment, it is a component for a connector that requires extremely good bending workability while having high strength. It is suitable as.
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Abstract
Description
しかしながら、ベリリウム銅は非常に高価でかつ金属ベリリウムは環境負荷物質として取り扱われている。そこで、これらの材料に代わる合金として、銅にニッケル(Ni)とシリコン(Si)を添加したコルソン合金(Cu-Ni-Si系合金)が注目されている。
コルソン合金はNi2Si金属間化合物の微細粒子をCu内に分散析出させて強化する析出硬化型の合金であり、これまでにNiおよびSiの添加量やNi/Siを規定して、高強度および高導電性を図ることについての報告がある(特許文献1、2参照)。従来、コルソン合金において、NiとSiの含有量の質量%の比、すなわちNi(質量%)/Si(質量%)の値(以下Ni/Siと表記)は、主に強化に寄与するNi2Si化合物の化学量論比である4.2を中心とした範囲にするのが良いとされており、Ni/Siは特許文献1ではNi/Si=3~7となっており、また、特許文献2ではNi/Si=3.5~5.5となっている。さらに特許文献1では固溶Siが導電率を低下することを懸念し、固溶Si量をできるだけ低減させるため、Ni2Si組成よりもNi量が過剰気味な方が良く、Ni/Si=4.5が最も良いとしている。特許文献2でもNi/Si=4.2から値が外れる際の固溶NiおよびSiの増加による導電率低下を懸念し、Ni2Siの化学量論比Ni/Si=4.2に近いことが好ましいとしている。
そこで、本発明は、高強度と極めて良好な曲げ加工性とを有する電気電子機器用銅合金材料およびそれを用いた電気電子部品を提供することを課題とする。
本発明によれば、以下の手段が提供される:
(1)Niを2.0質量%以上3.3質量%未満含有し、Siの含有量がNiとSiの質量比(Ni/Si)で2.8~3.8の範囲であり、Mgを0.01~0.2質量%、Snを0.05~1.5質量%、Znを0.2~1.5質量%含有し、残部がCuおよび不可避不純物からなる電気電子機器用銅合金材料であって、厚さt=0.20mm、幅w=2.0mmの試験片に対して曲げ半径R(mm)の180°曲げを行った際に、割れの生じない最小の曲げ半径Rの値が0mm以上0.1mm以下であることを特徴とする電気電子機器用銅合金材料、
(2)Niを2.0質量%以上3.3質量%未満含有し、Siの含有量がNiとSiの質量比(Ni/Si)で2.8~3.8の範囲であり、Mgを0.01~0.2質量%、Snを0.05~1.5質量%、Znを0.2~1.5質量%含有し、さらにAg、Co、およびCrからなる群から選択される1種以上を合計で0.005~2.0質量%含有し、残部がCuおよび不可避不純物からなる電気電子機器用銅合金材料であって、厚さt=0.20mm、幅w=2.0mmの試験片に対して曲げ半径R(mm)の180°曲げを行った際に、割れの生じない最小の曲げ半径Rの値が0mm以上0.1mm以下であることを特徴とする電気電子機器用銅合金材料、
(3)鋳造された鋳塊を熱間圧延、生地(冷間)圧延、および溶体化処理を行った後、圧延率5~50%の中間(冷間)圧延、400~600℃にて0.5~12時間の時効処理、圧延率30%以下の仕上げ(冷間)圧延、および低温焼鈍処理をこの順に施して製造されたことを特徴とする前記(1)または(2)項に記載の電気電子機器用銅合金材料、
(4)鋳造された鋳塊を熱間圧延、生地(冷間)圧延、および溶体化処理を行った後、300~400℃にて0.5~8時間の時効処理を施し、さらに425~600℃にて0.5~12時間の時効を施し、仕上げ(冷間)圧延、および低温焼鈍処理をこの順に施して製造されたことを特徴とする前記(1)または(2)項に記載の電気電子機器用銅合金材料、
(5)鋳造された鋳塊を熱間圧延、生地(冷間)圧延、および溶体化処理を行った後、圧延率5~50%の中間(冷間)圧延、300~400℃にて0.5~8時間の時効処理を施し、さらに425~600℃にて0.5~12時間の時効処理を施し、圧延率30%以下の仕上げ(冷間)圧延、および低温焼鈍処理をこの順に施して製造されたことを特徴とする前記(1)または(2)項に記載の電気電子機器用銅合金材料、
(6)Niを2.0質量%以上3.3質量%未満含有し、Siの含有量がNiとSiの質量比(Ni/Si)で2.8~3.8の範囲であり、Mgを0.01~0.2質量%、Snを0.05~1.5質量%、Znを0.2~1.5質量%含有し、残部がCuおよび不可避不純物からなる電気電子機器用銅合金材料を加工して得られる電気電子部品であって、前記銅合金材料は、厚さt=0.20mm、幅w=2.0mmの試験片に対して曲げ半径R(mm)の180°曲げを行った際に、割れの生じない最小の曲げ半径Rの値が0mm以上0.1mm以下であることを特徴とする電気電子部品、および、
(7)Niを2.0質量%以上3.3質量%未満含有し、Siの含有量がNiとSiの質量比(Ni/Si)で2.8~3.8の範囲であり、Mgを0.01~0.2質量%、Snを0.05~1.5質量%、Znを0.2~1.5質量%含有し、さらにAg、Co、およびCrからなる群から選択される1種以上を合計で0.005~2.0質量%含有し、残部がCuおよび不可避不純物からなる電気電子機器用銅合金材料を加工して得られる電気電子部品であって、前記銅合金材料は、厚さt=0.20mm、幅w=2.0mmの試験片に対して曲げ半径R(mm)の180°曲げを行った際に、割れの生じない最小の曲げ半径Rの値が0mm以上0.1mm以下であることを特徴とする電気電子部品。
本発明の上記及び他の特徴及び利点は、下記の記載からより明らかになるであろう。
Agは耐熱性および強度を向上させると同時に、結晶粒の粗大化を阻止して曲げ加工性を改善する。Ag量が0.005質量%未満ではその効果が充分に得られず、0.3質量%を超えて添加しても特性上に悪影響はないもののコスト高になる。これらの観点からAgの含有量は0.005~0.3質量%とする。
Coは、Niと同様にSiと化合物を形成して強度を向上させる。Coの含有量は0.05質量%未満ではその効果が充分に得られず、2.0質量%を超えると、溶体化処理後にも強度に寄与しない晶出・析出物が存在して曲げ加工性が劣化する。
CrはNiやSiとの第二相として析出し、結晶粒径の制御に有効である。0.05質量%未満ではその効果が充分に得られず、1.0質量%を超えると曲げ加工性が劣化する。
上述Ag、Co、Crを2種以上添加する場合には、要求特性に応じて0.005~2.0質量%の範囲内で決定される。
本発明の電気電子機器用銅合金材料の形状は、特に限定されるものでなく、板、条、線、棒、箔などが挙げられる。
本発明では、鋳造は一般的なDC法(Direct Chill Casting)などで行う。熱間圧延は、鋳塊を850~1000℃の温度で0.5~12時間の均質化処理を施した直後、700~950℃の温度で圧延を行い、その後、冷却中の析出を防ぐために水冷することが好ましい。熱間圧延後酸化膜を面削後に冷間にて圧延を行う。以下、この冷間圧延を生地圧延と呼称する。生地圧延は中間圧延、仕上げ圧延において所定の加工率が得られる板厚に圧延を行う。
また、時効処理は材料の実体温度300~400℃にて0.5~8時間の時効の後、実体温度425~600℃、0.5~12時間の2段階の時効とすることで、Ni-Si化合物の析出密度を向上し強度と曲げ性をさらに向上させることが可能である。この2段階の時効処理を実施する場合、上記工程の中間圧延を実施しなくても良いが、中間圧延を行うことで更に強度を向上させることができる。
表1に示す組成の銅合金を溶解し、DC法により鋳造して、厚さ30mm,幅100mm,長さ150mmの鋳塊を得た。次にこれら鋳塊を900℃に加熱し、この温度に1時間保持後、厚さ12mmに熱間圧延し、速やかに冷却した。次いで両面を各1.5mmずつ切削して酸化被膜を除去した後、生地圧延により厚さ0.25~0.50mmに加工した。この後、750~880℃の種々の条件で溶体化処理を行い、直ちに15℃/秒以上の冷却速度で冷却した。次いで圧延率5~50%の中間圧延を施した。次に不活性ガス雰囲気中で、450~550℃で2時間の時効処理を施し、その後圧延率30%以下の仕上げ圧延を行い、最終的な板厚を0.20mmに揃えた。仕上げ圧延後、500℃で30秒の低温焼鈍処理を施した材料で以下の各種特性評価を行った。なお、本明細書において、各表に示す銅合金の成分(Ni、Si等)の単位は、質量比であるNi/Siの値(単位なし)を除き、いずれも質量%(mass%)である。
(1)結晶粒径はJIS H 0501(切断法)により求めた。
(2)引張強さはJIS Z 2201記載の5号試験片を用い、JIS Z 2241に準拠して求めた。引張強度は5MPaの整数倍に丸めて示した。
(3)導電率はJIS H 0505に準拠して求めた。
(4)曲げ加工性は、曲げ試験片幅wを2mm、板厚tを0.20mmとして、曲げ半径R(mm)=0~0.6で180°曲げを行い、割れの生じない最小の曲げ半径(R)と板厚(t)の比をR/tとして定義した。R/t=3.0でも割れが生じた場合にはR/t>3と表記した。なお、曲げ部の評価は、日本伸銅協会技術標準「銅および銅合金薄板条の曲げ加工性評価方法(JBMA T307:1999)」に準拠した。
比較例11、12はNi/Siは規定の範囲内だが、Ni量が下限値未満であるため強度が不十分である。比較例13、15~20および23はNi/Siが上限値より大きいために、それぞれ組成が対応する本発明例と比較して強度が低く、また、結晶粒径が大きいために曲げ加工性が低下した。比較例14、21、22および24はNi/Siが下限値未満のために、それぞれ組成が対応する本発明例と比較して強度が低く、また、導電率が低下した。比較例24では曲げ加工性も低下した。参考例25、26はNi量が規定値よりも多いために、本発明例における極めて良好な曲げ加工性は得られなかった。
実施例1で製造した、No.4、15および22の鋳塊を用いて、溶体化処理後の工程を変化させた効果を調査した結果を表2に示す。表2に示した番号は、例えば4の鋳塊を用いて製造工程を変更した場合には4-2など子番号を記載して表記してある。
本発明例4-2、比較例15-2および22-2は、実施例1記載の製造工程のうち、時効処理を350℃にて2時間の時効処理の後に500℃にて2時間の2段階の時効処理を施して作製した。本発明例4-3、比較例15-3および22-3は、実施例1の製造工程のうち、時効処理直前の中間圧延を行わずに時効処理を350℃にて2時間の時効処理の後に500℃にて2時間の2段階の時効処理を施して作製した。参考例4-4は実施例1の製造工程のうち、時効処理直前の中間圧延を行わずに時効処理を500℃にて2時間の1段階のみで行った例であり、前記(3)項に係る発明については比較例である。
特性の調査は各々の銅合金板について、実施例1と同様に(1)結晶粒径、(2)引張強さ、(3)導電率、(4)曲げ加工性を調べた。結果をあわせて表2に示す。
それに対して、比較例15-2および15-3はNi/Siが上限値よりも大きいために本発明例4-2および4-3と比較して、工程変更の効果が得られず強度が低く、また結晶粒径が大きいために曲げ加工性が低下した。比較例22-2および22-3はNi/Siが下限値未満であるために、導電率が低く、本発明例4-2および4-3と比較して工程変更の効果が得られず強度が低かった。また、参考例4-4は強度を向上させようと仕上げ圧延率を高めた例であるが、むしろ強度は低下し、また、曲げ加工性が劣化した。
Claims (7)
- Niを2.0質量%以上3.3質量%未満含有し、Siの含有量がNiとSiの質量比(Ni/Si)で2.8~3.8の範囲であり、Mgを0.01~0.2質量%、Snを0.05~1.5質量%、Znを0.2~1.5質量%含有し、残部がCuおよび不可避不純物からなる電気電子機器用銅合金材料であって、厚さt=0.20mm、幅w=2.0mmの試験片に対して曲げ半径R(mm)の180°曲げを行った際に、割れの生じない最小の曲げ半径Rの値が0mm以上0.1mm以下であることを特徴とする電気電子機器用銅合金材料。
- Niを2.0質量%以上3.3質量%未満含有し、Siの含有量がNiとSiの質量比(Ni/Si)で2.8~3.8の範囲であり、Mgを0.01~0.2質量%、Snを0.05~1.5質量%、Znを0.2~1.5質量%含有し、さらにAg、Co、およびCrからなる群から選択される1種以上を合計で0.005~2.0質量%含有し、残部がCuおよび不可避不純物からなる電気電子機器用銅合金材料であって、厚さt=0.20mm、幅w=2.0mmの試験片に対して曲げ半径R(mm)の180°曲げを行った際に、割れの生じない最小の曲げ半径Rの値が0mm以上0.1mm以下であることを特徴とする電気電子機器用銅合金材料。
- 鋳造された鋳塊を熱間圧延、生地(冷間)圧延、および溶体化処理を行った後、圧延率5~50%の中間(冷間)圧延、400~600℃にて0.5~12時間の時効処理、圧延率30%以下の仕上げ(冷間)圧延、および低温焼鈍処理をこの順に施して製造されたことを特徴とする請求項1または請求項2に記載の電気電子機器用銅合金材料。
- 鋳造された鋳塊を熱間圧延、生地(冷間)圧延、および溶体化処理を行った後、300~400℃にて0.5~8時間の時効処理を施し、さらに425~600℃にて0.5~12時間の時効を施し、仕上げ(冷間)圧延、および低温焼鈍処理をこの順に施して製造されたことを特徴とする請求項1または請求項2に記載の電気電子機器用銅合金材料。
- 鋳造された鋳塊を熱間圧延、生地(冷間)圧延、および溶体化処理を行った後、圧延率5~50%の中間(冷間)圧延、300~400℃にて0.5~8時間の時効処理を施し、さらに425~600℃にて0.5~12時間の時効処理を施し、圧延率30%以下の仕上げ(冷間)圧延、および低温焼鈍処理をこの順に施して製造されたことを特徴とする請求項1または請求項2に記載の電気電子機器用銅合金材料。
- Niを2.0質量%以上3.3質量%未満含有し、Siの含有量がNiとSiの質量比(Ni/Si)で2.8~3.8の範囲であり、Mgを0.01~0.2質量%、Snを0.05~1.5質量%、Znを0.2~1.5質量%含有し、残部がCuおよび不可避不純物からなる電気電子機器用銅合金材料を加工して得られる電気電子部品であって、前記銅合金材料は、厚さt=0.20mm、幅w=2.0mmの試験片に対して曲げ半径R(mm)の180°曲げを行った際に、割れの生じない最小の曲げ半径Rの値が0mm以上0.1mm以下であることを特徴とする電気電子部品。
- Niを2.0質量%以上3.3質量%未満含有し、Siの含有量がNiとSiの質量比(Ni/Si)で2.8~3.8の範囲であり、Mgを0.01~0.2質量%、Snを0.05~1.5質量%、Znを0.2~1.5質量%含有し、さらにAg、Co、およびCrからなる群から選択される1種以上を合計で0.005~2.0質量%含有し、残部がCuおよび不可避不純物からなる電気電子機器用銅合金材料を加工して得られる電気電子部品であって、前記銅合金材料は、厚さt=0.20mm、幅w=2.0mmの試験片に対して曲げ半径R(mm)の180°曲げを行った際に、割れの生じない最小の曲げ半径Rの値が0mm以上0.1mm以下であることを特徴とする電気電子部品。
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EP09729125.6A EP2267173A4 (en) | 2008-03-31 | 2009-03-30 | COPPER ALLOY MATERIAL FOR ELECTRICAL AND ELECTRONIC DEVICES AND ELECTRICAL AND ELECTRONIC COMPONENTS |
CN200980111783.8A CN101981214B (zh) | 2008-03-31 | 2009-03-30 | 电气电子设备用铜合金材料及电气电子零件 |
JP2009536500A JP4653239B2 (ja) | 2008-03-31 | 2009-03-30 | 電気電子機器用銅合金材料および電気電子部品 |
KR1020107023988A KR101114147B1 (ko) | 2008-03-31 | 2009-03-30 | 전기전자기기용 동합금 재료 및 전기전자부품 |
US12/893,341 US20110017358A1 (en) | 2008-03-31 | 2010-09-29 | Copper alloy material for electrical/electronic equipments, and electrical/electronic part |
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JP2001181759A (ja) | 1999-12-17 | 2001-07-03 | Nippon Mining & Metals Co Ltd | 表面特性の優れた電子材料用銅合金およびその製造方法 |
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US2185958A (en) * | 1938-12-13 | 1940-01-02 | New Haven Copper Company | Copper base alloy |
JP3520034B2 (ja) * | 2000-07-25 | 2004-04-19 | 古河電気工業株式会社 | 電子電気機器部品用銅合金材 |
US7090732B2 (en) * | 2000-12-15 | 2006-08-15 | The Furukawa Electric, Co., Ltd. | High-mechanical strength copper alloy |
JP3520046B2 (ja) * | 2000-12-15 | 2004-04-19 | 古河電気工業株式会社 | 高強度銅合金 |
JP4809602B2 (ja) * | 2004-05-27 | 2011-11-09 | 古河電気工業株式会社 | 銅合金 |
JP4566020B2 (ja) * | 2005-02-14 | 2010-10-20 | 株式会社神戸製鋼所 | 異方性の小さい電気電子部品用銅合金板 |
JP5247021B2 (ja) * | 2005-11-28 | 2013-07-24 | Jx日鉱日石金属株式会社 | 曲げ部のしわを低減させたCu−Ni−Si系合金板・条及びその製造方法 |
JP4357536B2 (ja) * | 2007-02-16 | 2009-11-04 | 株式会社神戸製鋼所 | 強度と成形性に優れる電気電子部品用銅合金板 |
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EP2267173A4 (en) | 2013-09-25 |
KR101114147B1 (ko) | 2012-03-13 |
CN101981214B (zh) | 2015-12-09 |
JPWO2009123158A1 (ja) | 2011-07-28 |
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JP4653239B2 (ja) | 2011-03-16 |
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