WO2009123040A1 - 太陽電池の製造方法,太陽電池の製造装置,及び太陽電池 - Google Patents
太陽電池の製造方法,太陽電池の製造装置,及び太陽電池 Download PDFInfo
- Publication number
- WO2009123040A1 WO2009123040A1 PCT/JP2009/056249 JP2009056249W WO2009123040A1 WO 2009123040 A1 WO2009123040 A1 WO 2009123040A1 JP 2009056249 W JP2009056249 W JP 2009056249W WO 2009123040 A1 WO2009123040 A1 WO 2009123040A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- partition
- solar cell
- defect
- partition element
- structural
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 230000007847 structural defect Effects 0.000 claims abstract description 100
- 230000007547 defect Effects 0.000 claims abstract description 72
- 238000009826 distribution Methods 0.000 claims abstract description 4
- 238000005192 partition Methods 0.000 claims description 155
- 238000000034 method Methods 0.000 claims description 54
- 238000005259 measurement Methods 0.000 claims description 42
- 239000000523 sample Substances 0.000 claims description 30
- 238000006243 chemical reaction Methods 0.000 claims description 29
- 230000008439 repair process Effects 0.000 claims description 22
- 239000010410 layer Substances 0.000 description 28
- 230000008569 process Effects 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 18
- 229910021417 amorphous silicon Inorganic materials 0.000 description 17
- 239000010408 film Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000002950 deficient Effects 0.000 description 7
- 238000001514 detection method Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000001678 irradiating effect Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000000593 degrading effect Effects 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 238000000638 solvent extraction Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- Amorphous silicon solar cells use a semiconductor film having a layer structure called a pin junction in which an amorphous silicon film (i-type) that generates electrons and holes when receiving light is sandwiched between p-type and n-type silicon films. . Electrodes are formed on both sides of the semiconductor film. Electrons and holes generated by sunlight move actively due to the potential difference between the p-type and n-type semiconductors, and this is continuously repeated, causing a potential difference between the electrodes on both sides.
- i-type amorphous silicon film
- a transparent electrode such as TCO (Transparent Conductive Oxide) is formed on a glass substrate as a lower electrode, and a semiconductor film made of amorphous silicon, an upper electrode, A structure in which an Ag thin film or the like is formed is employed.
- TCO Transparent Conductive Oxide
- an amorphous silicon solar cell including a photoelectric conversion body composed of such upper and lower electrodes and a semiconductor film there is a problem that a potential difference is small and a resistance value is large only by depositing each layer uniformly over a wide area on a substrate. .
- an amorphous silicon solar cell is configured by forming partition elements in which photoelectric converters are electrically partitioned for each predetermined size and electrically connecting partition elements adjacent to each other.
- a groove called a scribe line (scribe line) is formed on a photoelectric conversion body uniformly formed in a large area on a substrate using a laser beam or the like to obtain a large number of strip-shaped partition elements.
- a structure in which the partition elements are electrically connected in series is employed.
- an amorphous silicon solar cell having such a structure it is known that some structural defects occur in the manufacturing stage. For example, when an amorphous silicon film is formed, particles may be mixed or pinholes may be generated, so that the upper electrode and the lower electrode may be locally short-circuited.
- the metal film constituting the upper electrode melts along the scribe line to reach the lower electrode, There may be a local short circuit with the lower electrode.
- Patent Documents 1 and 2 a bias voltage is applied to the entire partition elements divided by a scribe line, and a Joule heat generated at a short-circuited portion is detected by an infrared sensor, whereby a partition element having a structural defect exists.
- a method of identifying is disclosed. Further, there is a structural defect by enlarging and observing the surface of all partition elements with a CCD camera or the like, or by irradiating light and measuring and comparing FF (fill factor) for each partition element.
- FF fill factor
- the present invention has been made in view of the above circumstances, and accurately identifies the location of occurrence of a structural defect in a short time without damaging the photoelectric conversion body of the solar cell, and reliably identifies the identified structural defect. Another object is to provide a solar cell manufacturing method and a solar cell manufacturing apparatus that can be removed and repaired.
- the part where the structural defect exists in the first partition element is limited (defect part specifying step), and the first partition element including the part where the structural defect exists and the first partition element
- the first partition element and the second partition element are irradiated with a laser beam so as to cross a boundary portion between adjacent second partition elements, and the structural defects are removed or separated (repair process).
- this invention provides the manufacturing apparatus of the following solar cells. That is, the solar cell manufacturing apparatus according to the second aspect of the present invention is configured such that, in the photoelectric conversion body, the regions adjacent to each other are limited in order to limit the site where the structural defect exists in the first partition element having the structural defect.
- a resistance measuring unit that measures resistance values at a plurality of locations between the partition elements, and between the first partition element including a portion where the structural defect exists and a second partition element adjacent to the first partition element.
- a repairing unit that irradiates the first partitioning element and the second partitioning element with a laser beam so as to cross the boundary, and removes or separates the structural defect.
- structural defects A ⁇ b> 1 caused by impurities (contamination) mixed into the semiconductor layer 14 and fine pinholes are generated in the semiconductor layer 14. Problems such as structural defect A2 may occur. Such structural defects A1 and A2 locally short-circuit (leak) between the first electrode layer 13 and the second electrode layer 15 to reduce power generation efficiency.
- a laser beam or the like is irradiated toward the photoelectric converter 12 to form a scribe line (scribe line) 19 and divided into a large number of strip-shaped partition elements 21, 21. : P2).
- FF fill factor
- the solar cell in which the partition element in which the structural defect exists is found through the defect partition specifying process as described above is sent to the defect site specifying process described below.
- a solar cell in which a partition element having a structural defect cannot be found is commercialized as a non-defective product through a protective layer formation step P6 and the like.
- the defect location specifying process specifies the position of the defect by changing the measurement interval of the resistance value in two stages, but further changes the measurement interval in three or more stages so that the defect is detected in the partition element.
- the existing position may be specified more accurately.
- a bias current (voltage) is intermittently applied only to the probe X1 intermittently at a predetermined wide measurement interval T1, and the approximate position of the structural defect R is specified.
- the bias current is applied to the probe X2 in the section in which the structural defect R is considered to exist, that is, the section having the lowest resistance value between the probes to which the bias current (voltage) is applied. (Voltage) is applied.
- the position of the structural defect R in the partition element is specified more accurately.
- the probe unit U in which the probes are densely arranged at the interval T2 along the longitudinal direction L of the partitioning element 21s the probe to which the bias current (voltage) is applied is appropriately changed to thereby change the probe.
- the position of the structural defect R can be quickly detected simply by selecting a probe that supplies a bias current without moving the needle in the longitudinal direction L.
- the structural defect R of the solar cell is repaired (repair process: P5).
- the structural defect R is caused in the vicinity of the scribe line 19 between the adjacent partition elements 21 due to the shift of the laser irradiation position. .
- a solar cell including a partition element having a structural defect is selected in a defect partition specifying step. Then, only the sorted solar cells having defects are sent to the defect site identification process. In the defect site identification step, the site where the defect is present is accurately identified, so that it is possible to efficiently manufacture a solar cell free of structural defects.
- the position where the defect exists in the partition element can be accurately identified in the defect site identification process, it is possible to remove only the minimum region including the defect in the repair process. Therefore, the defective portion can be repaired without greatly degrading the characteristics as a solar cell and without damaging the appearance.
- the first partition element 21s and the first partition element 21s and the second partition element 21 so as to cross the scribe line 19 between the first partition element 21s including the portion where the structural defect exists and the second partition element 21 adjacent to the first partition element 21s.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
本願は、2008年3月31日に出願された特願2008-090570号に基づき優先権を主張し、その内容をここに援用する。
このような上下電極と半導体膜からなる光電変換体を備えたアモルファスシリコン太陽電池においては、基板上に広い面積で均一に各層を成膜しただけでは電位差が小さく、抵抗値が大きくなる問題がある。そのため、例えば、光電変換体を所定のサイズごとに電気的に区画した区画素子を形成し、互いに隣接する区画素子どうしを電気的に接続することにより、アモルファスシリコン太陽電池が構成されている。
具体的には、基板上に広い面積で均一に形成した光電変換体にレーザー光などを用いてスクライブ線(スクライブライン)と称される溝を形成し、多数の短冊状の区画素子を得て、この区画素子どうしを電気的に直列に接続した構造が採用される。
また、欠陥箇所が発熱する程度にバイアス電圧を印加するため、半導体膜にダメージを与える虞もあった。
光を照射して区画素子ごとのFFを測定する方法では、欠陥が存在する区画素子自体は検出できるが、区画素子内のどこに欠陥が存在するかを特定することは困難であった。
また、大よその欠陥位置しか特定しないで、バイアス電圧を印加して欠陥を除去する場合、バイアス電圧を高くする必要があった。しかし、必要以上に高いバイアス電圧を印加すると、欠陥が生じていない正常な部分にダメージを与えるという問題があった。
即ち、本発明の第2態様の太陽電池の製造装置は、前記光電変換体のうち、構造欠陥を有する第1区画素子内で前記構造欠陥が存在する部位を限定するために、互いに隣接する前記区画素子どうしの間で複数個所の抵抗値を測定する抵抗測定部と、前記構造欠陥が存在する部位を含む前記第1区画素子と前記第1区画素子に隣接する第2区画素子との間の境界部を横断するように前記第1区画素子及び前記第2区画素子にレーザー光線を照射し、前記構造欠陥を除去もしくは分離する修復部と、を含む。
即ち、本発明の第3態様の太陽電池は、複数の区画素子を含む光電変換体と、前記光電変換体の一部を除去もしくは分離することによって形成され、互いに隣接する前記区画素子の間の境界部を横断している横断部と、を含む。
11 基板
12 光電変換体
13 第一電極
14 半導体層
15 第二電極
19 スクライブ線
21 区画素子
25 レーザー装置
まず、図1に示すように、透明な基板11の第1面11aに上に光電変換体12を形成する(光電変換体の形成工程:P1)。光電変換体12の構造としては、例えば、基板11の第1面11aから順に第一電極層(下部電極)13,半導体層14,及び第二電極層(上部電極)15が積層された構造であればよい。
Claims (5)
- 太陽電池の製造方法であって、
複数の区画素子を含み、互いに隣接する前記区画素子どうしが電気的に接続された光電変換体を形成し、
前記光電変換体のうち、構造欠陥を有する第1区画素子を特定し、
互いに隣接する前記区画素子どうしの間で複数個所の抵抗値を測定して得られる抵抗値の分布に基づき、欠陥部位を特定することにより、前記第1区画素子内で構造欠陥が存在する部位を限定し、
前記構造欠陥が存在する部位を含む前記第1区画素子と、前記第1区画素子に隣接する第2区画素子との間の境界部を横断するように、前記第1区画素子及び前記第2区画素子にレーザー光線を照射し、前記構造欠陥を除去もしくは分離する。 - 前記構造欠陥が存在する部位を限定する際に、抵抗値の測定密度を少なくとも2段階以上変えて測定することを特徴とする請求項1に記載の太陽電池の製造方法。
- 前記構造欠陥が存在する部位を限定する際に、抵抗値の測定には4探針式の抵抗測定装置が用いられることを特徴とする請求項1または2に記載の太陽電池の製造方法。
- 複数の区画素子を含む光電変換体を有する太陽電池の製造装置であって、
前記光電変換体のうち、構造欠陥を有する第1区画素子内で前記構造欠陥が存在する部位を限定するために、互いに隣接する前記区画素子どうしの間で複数個所の抵抗値を測定する抵抗測定部と、
前記構造欠陥が存在する部位を含む前記第1区画素子と、前記第1区画素子に隣接する第2区画素子との間の境界部を横断するように、前記第1区画素子及び前記第2区画素子にレーザー光線を照射し、前記構造欠陥を除去もしくは分離する修復部と、
を含むことを特徴とする太陽電池の製造装置。 - 太陽電池であって、
複数の区画素子を含む光電変換体と、
前記光電変換体の一部を除去もしくは分離することによって形成され、互いに隣接する前記区画素子の間の境界部を横断している横断部と、
を含むことを特徴とする太陽電池。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP09727036A EP2264781A4 (en) | 2008-03-31 | 2009-03-27 | METHOD FOR PRODUCING A SOLAR CELL, DEVICE FOR PREPARING A SOLAR CELL AND SOLAR CELL |
JP2010505823A JP5144747B2 (ja) | 2008-03-31 | 2009-03-27 | 太陽電池の製造方法,太陽電池の製造装置,及び太陽電池 |
CN2009801036169A CN101933154B (zh) | 2008-03-31 | 2009-03-27 | 太阳能电池的制造方法、太阳能电池的制造装置以及太阳能电池 |
US12/865,665 US20110005571A1 (en) | 2008-03-31 | 2009-03-27 | Method and apparatus for manufacturing solar cell, and solar cell |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008090570 | 2008-03-31 | ||
JP2008-090570 | 2008-03-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009123040A1 true WO2009123040A1 (ja) | 2009-10-08 |
Family
ID=41135418
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2009/056249 WO2009123040A1 (ja) | 2008-03-31 | 2009-03-27 | 太陽電池の製造方法,太陽電池の製造装置,及び太陽電池 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20110005571A1 (ja) |
EP (1) | EP2264781A4 (ja) |
JP (1) | JP5144747B2 (ja) |
KR (1) | KR20100113129A (ja) |
CN (1) | CN101933154B (ja) |
TW (1) | TW201003960A (ja) |
WO (1) | WO2009123040A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011142297A (ja) * | 2009-12-08 | 2011-07-21 | Hitachi Via Mechanics Ltd | 薄膜太陽電池製造方法及びレーザスクライブ装置 |
JPWO2013179898A1 (ja) * | 2012-05-29 | 2016-01-18 | 三菱電機株式会社 | 太陽電池モジュールとその製造方法および太陽電池モジュール製造管理装置 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012064933A (ja) * | 2010-08-19 | 2012-03-29 | Semiconductor Energy Lab Co Ltd | 光電変換モジュール及びその作製方法 |
CN102922141A (zh) * | 2011-08-11 | 2013-02-13 | 吉富新能源科技(上海)有限公司 | 一种以绝缘量测改善tco膜厚划线后良率的技术方法 |
JP5786028B2 (ja) * | 2011-09-05 | 2015-09-30 | 株式会社日本マイクロニクス | シート状電池の評価装置及び評価方法 |
DE102012212419A1 (de) * | 2012-07-16 | 2014-01-16 | Robert Bosch Gmbh | Verfahren zum Herstellen eines Energiespeichers und Energiespeicher |
EP3282577B1 (en) * | 2016-08-09 | 2018-12-05 | Main-Energia Inc. | Apparatus for measuring pollution level of surface of photovoltaic module |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6154681A (ja) * | 1984-08-25 | 1986-03-18 | Fuji Electric Corp Res & Dev Ltd | 薄膜光起電力素子の製造方法 |
JPH09266322A (ja) | 1996-03-27 | 1997-10-07 | Sanyo Electric Co Ltd | 光電変換素子のリーク箇所検出リペア装置 |
JP2001135835A (ja) * | 1999-11-08 | 2001-05-18 | Kanegafuchi Chem Ind Co Ltd | 薄膜光電変換セルの欠陥修復方法、薄膜光電変換モジュールの製造方法、及び薄膜光電変換モジュールの欠陥修復装置 |
JP2002203978A (ja) | 2000-12-28 | 2002-07-19 | Canon Inc | 光起電力素子モジュールの短絡欠陥検出方法及び短絡欠陥修復方法 |
JP2006245507A (ja) * | 2005-03-07 | 2006-09-14 | Sharp Corp | 薄膜太陽電池およびその製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4233330B2 (ja) * | 2003-01-10 | 2009-03-04 | 三洋電機株式会社 | 光起電力装置の検査方法 |
US20070227586A1 (en) * | 2006-03-31 | 2007-10-04 | Kla-Tencor Technologies Corporation | Detection and ablation of localized shunting defects in photovoltaics |
-
2009
- 2009-03-27 KR KR1020107018376A patent/KR20100113129A/ko not_active Application Discontinuation
- 2009-03-27 US US12/865,665 patent/US20110005571A1/en not_active Abandoned
- 2009-03-27 WO PCT/JP2009/056249 patent/WO2009123040A1/ja active Application Filing
- 2009-03-27 CN CN2009801036169A patent/CN101933154B/zh not_active Expired - Fee Related
- 2009-03-27 EP EP09727036A patent/EP2264781A4/en not_active Withdrawn
- 2009-03-27 JP JP2010505823A patent/JP5144747B2/ja not_active Expired - Fee Related
- 2009-03-30 TW TW098110478A patent/TW201003960A/zh unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6154681A (ja) * | 1984-08-25 | 1986-03-18 | Fuji Electric Corp Res & Dev Ltd | 薄膜光起電力素子の製造方法 |
JPH09266322A (ja) | 1996-03-27 | 1997-10-07 | Sanyo Electric Co Ltd | 光電変換素子のリーク箇所検出リペア装置 |
JP2001135835A (ja) * | 1999-11-08 | 2001-05-18 | Kanegafuchi Chem Ind Co Ltd | 薄膜光電変換セルの欠陥修復方法、薄膜光電変換モジュールの製造方法、及び薄膜光電変換モジュールの欠陥修復装置 |
JP2002203978A (ja) | 2000-12-28 | 2002-07-19 | Canon Inc | 光起電力素子モジュールの短絡欠陥検出方法及び短絡欠陥修復方法 |
JP2006245507A (ja) * | 2005-03-07 | 2006-09-14 | Sharp Corp | 薄膜太陽電池およびその製造方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2264781A4 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011142297A (ja) * | 2009-12-08 | 2011-07-21 | Hitachi Via Mechanics Ltd | 薄膜太陽電池製造方法及びレーザスクライブ装置 |
CN102169920A (zh) * | 2009-12-08 | 2011-08-31 | 日立比亚机械股份有限公司 | 薄膜太阳能电池制造方法和激光刻图装置 |
JPWO2013179898A1 (ja) * | 2012-05-29 | 2016-01-18 | 三菱電機株式会社 | 太陽電池モジュールとその製造方法および太陽電池モジュール製造管理装置 |
Also Published As
Publication number | Publication date |
---|---|
EP2264781A4 (en) | 2013-03-27 |
US20110005571A1 (en) | 2011-01-13 |
CN101933154B (zh) | 2012-06-20 |
JPWO2009123040A1 (ja) | 2011-07-28 |
TW201003960A (en) | 2010-01-16 |
EP2264781A1 (en) | 2010-12-22 |
JP5144747B2 (ja) | 2013-02-13 |
KR20100113129A (ko) | 2010-10-20 |
CN101933154A (zh) | 2010-12-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5144747B2 (ja) | 太陽電池の製造方法,太陽電池の製造装置,及び太陽電池 | |
JP5048843B2 (ja) | 太陽電池の製造方法 | |
TWI404223B (zh) | 太陽電池之製造方法 | |
WO2010018869A1 (ja) | 太陽電池の製造方法及び製造装置 | |
JP5186552B2 (ja) | 太陽電池の製造方法および太陽電池の製造装置 | |
WO2009123070A1 (ja) | 太陽電池の製造方法および太陽電池の製造装置 | |
JP2009246122A (ja) | 太陽電池の製造方法および製造装置 | |
JP2010021437A (ja) | 太陽電池の製造装置およびその製造方法 | |
WO2011024750A1 (ja) | 太陽電池の評価方法及び評価装置 | |
KR101169455B1 (ko) | 태양전지의 제조방법 | |
WO2010146698A1 (ja) | 太陽電池の製造方法および太陽電池の製造装置 | |
JP2012114229A (ja) | 電気特性測定装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200980103616.9 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 09727036 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2010505823 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 12865665 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2009727036 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref document number: 20107018376 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |