WO2009119201A1 - Film de sous-couche de réserve, composition et procédé de formation de ce film - Google Patents

Film de sous-couche de réserve, composition et procédé de formation de ce film Download PDF

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Publication number
WO2009119201A1
WO2009119201A1 PCT/JP2009/052931 JP2009052931W WO2009119201A1 WO 2009119201 A1 WO2009119201 A1 WO 2009119201A1 JP 2009052931 W JP2009052931 W JP 2009052931W WO 2009119201 A1 WO2009119201 A1 WO 2009119201A1
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Prior art keywords
underlayer film
resist underlayer
resist
forming
composition
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PCT/JP2009/052931
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English (en)
Japanese (ja)
Inventor
洋助 今野
仲篤 能村
浩光 中島
信也 峯岸
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Jsr株式会社
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Publication of WO2009119201A1 publication Critical patent/WO2009119201A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers

Definitions

  • the present invention relates to a resist underlayer film, a resist underlayer film forming composition, and a resist underlayer film forming method. More specifically, the present invention can be suitably used for microfabrication in a lithography process using various types of radiation (particularly, a multilayer resist process suitable for manufacturing a highly integrated circuit element), and has excellent etching resistance.
  • the present invention relates to a resist underlayer film, a resist underlayer film forming composition, and a resist underlayer film forming method capable of transferring a resist pattern to a substrate to be processed faithfully with high reproducibility in an etching process.
  • the semiconductor device manufacturing process includes many steps of depositing a plurality of substances as a film to be processed on a silicon wafer and patterning the same into a desired pattern.
  • a photosensitive material generally called a resist is deposited on the film to be processed to form a resist film, and a predetermined region of the resist film is exposed.
  • the exposed portion or the unexposed portion of the resist film is removed by development processing to form a resist pattern, and the processed film is dry-etched using the resist pattern as an etching mask.
  • ultraviolet light such as an ArF excimer laser is used as an exposure light source for exposing the resist film.
  • LSIs large-scale integrated circuits
  • the required resolution may be less than the wavelength of exposure light.
  • the exposure process tolerance such as the exposure tolerance and the focus tolerance is insufficient.
  • it is effective to improve the resolution by reducing the thickness of the resist film.
  • the resist thickness required for etching the film to be processed It becomes difficult to ensure.
  • a resist underlayer film (hereinafter also simply referred to as “underlayer film”) is formed on the film to be processed, and the resist pattern is once transferred to the underlayer film to form the underlayer film pattern.
  • underlayer film a resist underlayer film
  • multilayer resist process a process of transferring an underlayer film pattern to a film to be processed using an etching mask.
  • the lower layer film is preferably made of a material having etching resistance.
  • Examples of the material for forming such a lower layer film include, for example, a resin containing a benzene ring that absorbs energy during etching and is known to have etching resistance, in particular, a composition containing a thermosetting phenol novolac, and acenaphthylene.
  • a composition containing a polymer having a skeleton has been proposed (see, for example, Patent Documents 1 and 2).
  • the etching pattern is further miniaturized, the aspect ratio of the lower layer film pattern (the ratio of the pattern width (line width) to the film thickness of the lower layer film pattern) is increased, and the lower layer film pattern is changed during etching of the substrate to be processed. There was also a problem of bending. For example, since the composition described in Patent Document 1 has low bending resistance as an underlayer film pattern, the underlayer film pattern is bent during etching of the substrate to be processed, and the resist pattern is faithfully transferred to the substrate to be processed. I could not.
  • the present invention has been made in view of the above-mentioned problems of the prior art, and can be suitably used for microfabrication in a lithography process using various types of radiation, has excellent etching resistance, and particularly dry etching.
  • a resist underlayer film, a resist underlayer film forming composition, and a resist underlayer film forming method capable of transferring a resist pattern to a substrate to be processed faithfully with high reproducibility.
  • the present inventors have found that when the hydrogen content in the resist underlayer film is within a specific range (particularly 30 atom% or less), the underlayer film pattern during etching of the substrate to be processed is the conventional resist underlayer. The present inventors have found that it is harder to bend than a film and have completed the present invention.
  • the present invention is as follows. [1] A resist underlayer film is formed on a substrate to be processed, a resist pattern is formed on the resist underlayer film, the resist pattern is temporarily transferred to the resist underlayer film, and then the underlayer film pattern is formed. Is a resist underlayer film used in a multilayer resist process for transferring to a substrate to be processed using an etching mask, A resist underlayer film, wherein the content of hydrogen atoms in the resist underlayer film is 20 to 30 atom%.
  • a resist underlayer film forming method for forming the resist underlayer film according to [1] A step of forming a resist underlayer film by heating a coating film obtained using a composition for forming a resist underlayer film containing a resin having a phenolic hydroxyl group and a solvent; A resist underlayer film forming method, characterized in that it is in air, a heating temperature is 300 to 550 ° C., and a heating time is 30 to 600 seconds.
  • the resist underlayer film forming method according to [2] wherein the heating temperature is 350 to 550 ° C., and the heating time is 120 to 600 seconds.
  • the resin having a phenolic hydroxyl group is an aromatic compound having 6 to 10 carbon atoms having two phenolic hydroxyl groups, and at least selected from formaldehyde, paraformaldehyde, trioxane, furfural, benzaldehyde, vanillin, and naphthaldehyde.
  • a resist underlayer film forming composition for forming the resist underlayer film according to [1] contains a resin having a phenolic hydroxyl group and a solvent,
  • the resin having a phenolic hydroxyl group is obtained by a condensation reaction of dihydroxynaphthalene and at least one aldehyde derivative selected from formaldehyde, paraformaldehyde, trioxane, furfural, benzaldehyde, vanillin and naphthaldehyde.
  • a resist underlayer film forming composition is obtained by a condensation reaction of dihydroxynaphthalene and at least one aldehyde derivative selected from formaldehyde, paraformaldehyde, trioxane, furfural, benzaldehyde, vanillin and naphthaldehyde.
  • a resist underlayer film forming composition for forming the resist underlayer film according to [1] contains a resin having a phenolic hydroxyl group and a solvent,
  • the resin having a phenolic hydroxyl group is obtained by a condensation reaction between resorcinol and at least one aldehyde derivative selected from formaldehyde, paraformaldehyde, trioxane, furfural, benzaldehyde, vanillin and naphthaldehyde.
  • a composition for forming a resist underlayer film contains a resin having a phenolic hydroxyl group and a solvent,
  • the resin having a phenolic hydroxyl group is obtained by a condensation reaction between resorcinol and at least one aldehyde derivative selected from formaldehyde, paraformaldehyde, trioxane, furfural, benzaldehyde, vanillin and naphthaldehyde.
  • the resist underlayer film of the present invention is excellent in etching resistance, and the underlayer film pattern is not easily bent when the substrate to be processed is etched. Moreover, according to the composition for forming a resist underlayer film of the present invention, the resist underlayer film can be formed.
  • a resist underlayer film having excellent etching resistance has precise pattern transfer performance and good etching selectivity in a dry etching process, and there is little over-etching of the resist underlayer film, and a resist pattern is formed on a substrate to be processed. Transfers faithfully with good reproducibility.
  • the lower layer film pattern is not bent when the substrate to be processed is etched, an improvement in yield can be expected in microfabrication in the lithography process, particularly in the manufacture of highly integrated circuit elements.
  • the resist underlayer film forming composition is used to form an underlayer film pattern on the substrate to be processed, which has excellent etching resistance and is etched. It is possible to easily form a resist underlayer film that is not easily bent.
  • composition for forming a resist underlayer film of the present invention contains a resin having a phenolic hydroxyl group (hereinafter also referred to as “resin (A)”) and a solvent.
  • the resin (A) is obtained by a condensation reaction between an aromatic compound having 6 to 10 carbon atoms having two phenolic hydroxyl groups and an aldehyde derivative.
  • the resin (A) may be a novolak resin obtained by reacting with an acidic catalyst or a resol resin obtained by reacting with an alkaline catalyst.
  • aromatic hydrocarbon having 6 to 10 carbon atoms having two phenolic hydroxyl groups include, for example, phenols such as resorcinol and catechol; dihydroxynaphthalene (for example, 1,5-dihydroxynaphthalene, 2,7-dihydroxynaphthalene). , 2,6-dihydroxynaphthalene, 2,3-dihydroxynaphthalene) and the like.
  • these aromatic hydrocarbons may be used individually by 1 type, and may be used in combination of 2 or more type.
  • aldehyde derivative at least one selected from formaldehyde, paraformaldehyde, trioxane, furfural, benzaldehyde, vanillin and naphthaldehyde is used.
  • phenolic compounds other than aromatic hydrocarbons having a phenolic hydroxyl group other aldehyde compounds other than the above-mentioned aldehyde derivatives, and the like may be used.
  • the other phenol compounds include phenols such as phenol, cresol and xylenol; naphthols such as 1-naphthol and 2-naphthol.
  • these other phenol compounds may be used individually by 1 type, and may be used in combination of 2 or more type.
  • aldehyde compounds examples include aldehydes such as acetaldehyde and propionaldehyde.
  • these other aldehyde compounds may be used individually by 1 type, and may be used in combination of 2 or more type.
  • the polystyrene-equivalent weight average molecular weight (hereinafter referred to as “Mw”) of the resin (A) by gel permeation chromatography (GPC) is preferably 500 to 5000, more preferably 1000 to 3000. . If this Mw is less than 500, the in-plane uniformity of the film thickness may be impaired due to the effect of sublimation of low molecular components. On the other hand, when it exceeds 5000, when it is applied on a substrate having a pattern such as a via or a trench, the embedding property to the pattern may be impaired.
  • composition for forming a resist underlayer film in the present invention may contain only one kind of the resin (A), or may contain two or more kinds.
  • the composition for forming a resist underlayer film in the present invention contains a solvent for dissolving the resin (A) (hereinafter referred to as “solvent (B)”), and is usually a liquid composition.
  • solvent (B) is not particularly limited as long as it can dissolve the resin (A).
  • ethylene glycol monomethyl ether ethylene glycol monoethyl ether, ethylene glycol mono-n-propyl ether, ethylene glycol mono Ethylene glycol monoalkyl ethers such as n-butyl ether; ethylene glycol monoalkyl ethers such as ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol mono-n-propyl ether acetate, ethylene glycol mono-n-butyl ether acetate Ether acetates; diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol di-n-propyl ether Diethylene glycol dialkyl ethers such as diethylene glycol di-n-butyl ether; triethylene glycol dialkyl ethers such as triethylene glycol dimethyl ether and triethylene glycol diethyl ether; propylene glycol monomethyl ether, propylene glycol monoe
  • Lactic acid esters such as methyl lactate, ethyl lactate, n-propyl lactate, i-propyl lactate, n-butyl lactate, i-butyl lactate; methyl formate, ethyl formate, n-propyl formate, i-propyl formate, n-formate Butyl, i-butyl formate, n-amyl formate, i-amyl formate, methyl acetate, ethyl acetate, n-propyl acetate, i-propyl acetate, n-butyl acetate, i-butyl acetate, n-amyl acetate, i-acetate -Amyl, n-hexyl acetate, methyl propionate, ethyl propionate, n-propyl propionate, i-propyl propionate, n-butyl propionate
  • solvents (B) propylene glycol monomethyl ether, ethylene glycol monoethyl ether acetate, ethyl lactate, n-butyl acetate, ethyl 3-ethoxypropionate, methyl 3-methoxypropionate, 2-heptanone, cyclohexanone, ⁇ -butyrolactone is preferred.
  • these solvent (B) may be used individually by 1 type, and may be used in combination of 2 or more type.
  • the amount of the solvent (B) used is such that the solid content concentration of the resulting resist underlayer film forming composition is usually 5 to 80% by mass, preferably 5 to 40% by mass, more preferably 10 to 30% by mass. This is the range.
  • the composition for forming a resist underlayer film in the present invention includes, as necessary, an accelerator, an acid generator, a crosslinking agent, a binder resin, a radiation absorber, and a surfactant, as long as the initial effects are not impaired. These various additives can be blended.
  • the composition for forming a resist underlayer film of the present invention preferably contains an accelerator.
  • the accelerator promotes a dehydrogenation reaction and reduces the hydrogen content of the resist underlayer film when heating the coating film obtained from the resist underlayer film forming composition in order to form the resist underlayer film. It is an auxiliary that can be used.
  • Specific examples of the accelerator include a one-electron oxidant.
  • the one-electron oxidant means an oxidant that itself undergoes one electron transfer. For example, in the case of cerium (IV) ammonium nitrate, cerium ion (IV) obtains one electron and changes to cerium ion (III).
  • radical oxidizing agents such as halogen obtain one electron and convert it to an anion. In this way, the phenomenon of oxidizing the oxide by taking one electron from the oxide (substrate, catalyst, etc.) is called one-electron oxidation, and the component that receives one electron at this time is called one-electron oxidant.
  • Typical examples of the one-electron oxidizing agent include (a) metal compounds, (b) peroxides, (c) diazo compounds, (d) halogens or halogen acids.
  • Examples of the metal compound (a) include metal compounds containing cerium, lead, silver, manganese, osmium, ruthenium, vanadium, thallium, copper, iron, bismuth, and nickel.
  • cerium salts such as cerium (IV) ammonium nitrate (CAN; ammonium hexanitratocerium (IV)), cerium (IV) acetate, cerium (IV) nitrate, cerium (IV) sulfate (
  • tetravalent cerium salt etravalent cerium salt
  • lead tetraacetate lead oxide such as lead (IV) oxide (eg, tetravalent lead compound)
  • silver oxide oxide
  • silver (II) oxide silver
  • silver compounds such as silver nitrate
  • manganese compounds such as permanganate, activated manganese dioxide, manganese (III) salts,
  • osmium compounds such as osmium tetroxide
  • Ruthenium compounds such as ruthenium oxide
  • Vanadium compounds such as VOCl 3 , VOF 3 , V 2 O 5 , NH 4 VO
  • Examples of the (b) peroxide include peracids such as peracetic acid and m-chloroperbenzoic acid, hydroxyperoxides such as hydrogen peroxide and t-butyl hydroperoxide, diacyl peroxide, perester, Examples include acid ketals, peroxydicarbonates, dialkyl peroxides, and peracid ketones. In addition, these may be used individually by 1 type and may be used in combination of 2 or more type.
  • Examples of the (c) diazo compound include 2,2'-azobisisobutyronitrile. In addition, these may be used individually by 1 type and may be used in combination of 2 or more type.
  • halogen or halogen acid examples include perhalogen acids, halogen acids, halogen acids, and hypohalous acids selected from halogens such as chlorine, bromine, and iodine, and halogens such as chlorine, bromine, and iodine. And salts thereof.
  • halogen acid salts include sodium perchlorate and sodium bromate. In addition, these may be used individually by 1 type and may be used in combination of 2 or more type.
  • (b) peroxides and (c) diazo compounds are preferable, and in particular, m-chloroperbenzoic acid, t-butyl hydroperoxide, 2,2′-azobisisobutyronitrile. Is preferred. When these are used, there is no possibility that metal residues or the like adhere to the substrate, which is preferable.
  • the resist underlayer film forming composition in the present invention may contain two or more of the accelerators.
  • two or more one-electron oxidizing agents selected from the above (a) metal compound and (b) peroxide can be contained.
  • the amount of the accelerator is usually 1,000 parts by mass or less, preferably 0.01 to 500 parts by mass, and more preferably 0.1 to 100 parts by mass with respect to 100 parts by mass of the resin (A). Part.
  • the acid generator is a component that generates an acid upon exposure or heating.
  • a crosslinking reaction can be effectively caused between the molecular chains of each polymer at a relatively low temperature including normal temperature.
  • the acid generator that generates an acid upon exposure include diphenyliodonium trifluoromethanesulfonate, diphenyliodonium nonafluoro-n-butanesulfonate, diphenyliodonium pyrenesulfonate, and diphenyliodonium n.
  • Halogen-containing compound-based photoacid generators such as phenylbis (trichloromethyl) -s-triazine, 4-methoxyphenylbis (trichloromethyl) -s-triazine, 1-naphthylbis (trichloromethyl) -s-triazine; 1,2-naphthoquinonediazide-4-sulfonyl chloride, 1,2-naphthoquinonediazide-5-sulfonyl chloride, 1,3,4-naphthoquinonediazide-4-sulfonic acid ester of 2,3,4,4′-tetrahydroxybenzophenone or 1, Diazoketone compound photoacid generators such as 2-naphthoquinonediazide-5-sulfonic acid ester; sulfone compound photoacid generators such as 4-trisphenacylsulfone, mesitylphenacylsulfone, and bis (phenylsulfony
  • diphenyliodonium trifluoromethanesulfonate diphenyliodonium nonafluoro-n-butanesulfonate, diphenyliodonium pyrenesulfonate, diphenyliodonium n-dodecylbenzenesulfonate, diphenyliodonium 10-camphorsulfonate, diphenyliodonium naphthalenesulfonate
  • Bis (4-t-butylphenyl) iodonium trifluoromethanesulfonate bis (4-t-butylphenyl) iodonium nonafluoro-n-butanesulfonate, bis (4-t-butylphenyl) iodonium n-dodecylbenzenesulfonate, bis (4-tert-butylphenyl) iodonium 10-camphorsulfon
  • thermal acid generator examples include 2,4,4,6-tetrabromocyclohexadienone, benzoin tosylate, 2-nitrobenzyl, and the like. Tosylate, alkyl sulfonates and the like can be mentioned.
  • thermal acid generators may be used individually by 1 type, and may be used in combination of 2 or more type.
  • a photo-acid generator and a thermal acid generator can also be used together as an acid generator.
  • the amount of the acid generator is usually 5000 parts by mass or less, preferably 0.1 to 1000 parts by mass, more preferably 0.1 to 100 parts by mass with respect to 100 parts by mass of the resin (A). It is.
  • the crosslinking agent is a component having an action of preventing intermixing between the obtained resist underlayer film and the resist film formed thereon, and further preventing the occurrence of cracks in the resist underlayer film.
  • a crosslinking agent polynuclear phenols and various commercially available curing agents can be used.
  • polynuclear phenols examples include binuclear phenols such as 4,4′-biphenyldiol, 4,4′-methylene bisphenol, 4,4′-ethylidene bisphenol, and bisphenol A; 4,4 ′, 4 ′′ -Trinuclear phenols such as methylidenetrisphenol, 4,4 '-[1- [4- ⁇ 1- (4-hydroxyphenyl) -1-methylethyl ⁇ phenyl] ethylidene] bisphenol; polyphenols such as novolak Is mentioned.
  • binuclear phenols such as 4,4′-biphenyldiol, 4,4′-methylene bisphenol, 4,4′-ethylidene bisphenol, and bisphenol A
  • 4,4 ′, 4 ′′ -Trinuclear phenols such as methylidenetrisphenol, 4,4 '-[1- [4- ⁇ 1- (4-hydroxyphenyl) -1
  • 4,4 ′-[1- [4- ⁇ 1- (4-hydroxyphenyl) -1-methylethyl ⁇ phenyl] ethylidene] bisphenol, novolak, and the like are preferable.
  • these polynuclear phenols may be used individually by 1 type, and may be used in combination of 2 or more type.
  • Examples of the curing agent include 2,3-tolylene diisocyanate, 2,4-tolylene diisocyanate, 3,4-tolylene diisocyanate, 3,5-tolylene diisocyanate, 4,4 ′.
  • -Diisocyanates such as diphenylmethane diisocyanate, hexamethylene diisocyanate, 1,4-cyclohexane diisocyanate, and the following trade names: Epicoat 812, 815, 826, 828, 834, 834 871, 1001, 1004, 1007, 1007, 1009, 1031 [above, manufactured by Yuka Shell Epoxy Co., Ltd.], Araldite 6600, 6700, 6800, 502, 6071, 6084, 6097, 6099 (above, manufactured by Ciba Geigy), DER331, 332, 333, 66 1, 644, 667 [above, manufactured by Dow Chemical Co., Ltd.]; Cymel 300, 301, 303, 350, 370
  • melamine curing agents glycoluril curing agents and the like are preferable.
  • curing agents may be used individually by 1 type, and may be used in combination of 2 or more type.
  • curing agent can also be used together as a crosslinking agent.
  • the blending amount of the crosslinking agent is usually 5000 parts by mass or less, preferably 1 to 1000 parts by mass, and more preferably 1 to 20 parts by mass with respect to 100 parts by mass of the resin (A).
  • thermoplastic resin is a component having an action of imparting the fluidity and mechanical characteristics of the added thermoplastic resin to the lower layer film.
  • thermoplastic resin include polyethylene, polypropylene, poly-1-butene, poly-1-pentene, poly-1-hexene, poly-1-heptene, poly-1-octene, poly-1-decene, and poly-1-decene.
  • ⁇ -Olefin polymers such as 1-dodecene, poly-1-tetradecene, poly-1-hexadecene, poly-1-octadecene, and polyvinylcycloalkane; poly-1,4-pentadiene, poly-1,4- Non-conjugated diene polymers such as hexadiene and poly-1,5-hexadiene; ⁇ , ⁇ -unsaturated aldehyde polymers; poly (methyl vinyl ketone), poly (aromatic vinyl ketone), poly (cyclic vinyl ketone) ⁇ , ⁇ -unsaturated ketone polymers such as: (meth) acrylic acid, ⁇ -chloroacrylic acid, (meth) acrylic acid salt, (meth) acrylic acid Polymers of ⁇ , ⁇ -unsaturated carboxylic acids or derivatives thereof such as stealth and (meth) acrylic acid halides; ⁇ , ⁇ -unsaturated polymers of poly
  • thermosetting resin is a component having an action of preventing intermixing between the resist underlayer film obtained and the resist film formed thereon, which is cured by heating and becomes insoluble in a solvent.
  • thermosetting resin include thermosetting acrylic resins, phenol resins, urea resins, melamine resins, amino resins, aromatic hydrocarbon resins, epoxy resins, alkyd resins, and the like. Is mentioned. Of these, urea resins, melamine resins, aromatic hydrocarbon resins and the like are preferable.
  • binder resins may be used individually by 1 type, and may be used in combination of 2 or more type.
  • the amount of the binder resin is usually 20 parts by mass or less, preferably 1 to 10 parts by mass with respect to 100 parts by mass of the resin (A).
  • the radiation absorber examples include oil-soluble dyes, disperse dyes, basic dyes, methine dyes, pyrazole dyes, imidazole dyes, hydroxyazo dyes, and the like; bixin derivatives, norbixin, stilbene, 4, Optical brighteners such as 4′-diaminostilbene derivatives, coumarin derivatives, pyrazoline derivatives; UV absorbers such as hydroxyazo dyes, trade names “Tinuvin 234” and “Tinuvin 1130” (manufactured by Ciba Geigy); anthracene derivatives And aromatic compounds such as anthraquinone derivatives.
  • these radiation absorbers may be used individually by 1 type, and may be used in combination of 2 or more type.
  • the compounding amount of the radiation absorber is usually 100 parts by mass or less, preferably 1 to 50 parts by mass with respect to 100 parts by mass of the resin (A).
  • the surfactant is a component having an action of improving coatability, striation, wettability, developability and the like.
  • the surfactant include polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene-n-octylphenyl ether, polyoxyethylene-n-nonylphenyl ether, polyethylene glycol dilaurate , Nonionic surfactants such as polyethylene glycol distearate and the following trade names: KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.), Polyflow No. 75, no.
  • the blending amount of the surfactant is usually 15 parts by mass or less, preferably 0.001 to 10 parts by mass with respect to 100 parts by mass of the resin (A).
  • additives such as a storage stabilizer, an antifoaming agent, and an adhesion aid can be blended in addition to the various additives described above.
  • the resist underlayer film forming method of the present invention includes a step of forming a resist underlayer film by heating a coating film obtained using the resist underlayer film forming composition.
  • the above description can be applied as it is to the resist underlayer film forming composition.
  • the coating film is usually formed by applying a resist underlayer film forming composition on a substrate to be processed.
  • a substrate to be processed for example, a silicon wafer; a wafer coated with aluminum, an oxide film, or a nitride film can be used.
  • coating method of the composition for resist underlayer film formation to a to-be-processed substrate is not specifically limited, For example, it can implement by appropriate methods, such as spin coating, cast coating, and roll coating.
  • the said coating film is heated in air
  • the heating temperature at this time is 300 to 800 ° C., preferably 300 to 700 ° C., more preferably 350 to 550 ° C.
  • a heating temperature of 300 to 550 ° C. is preferable because the dehydrogenation reaction proceeds sufficiently.
  • the heating time is 30 to 1200 seconds, preferably 60 to 800 seconds, and more preferably 120 to 600 seconds.
  • the coating film before it is heated at a temperature of 300 to 550 ° C., it may be preheated at a temperature of 100 to 250 ° C.
  • the heating time in the preheating is not particularly limited, but is preferably 10 to 300 seconds, and more preferably 30 to 120 seconds.
  • one-electron oxidation of the resin (A) in the resist underlayer film forming composition forming the coating film (for example, one electron of the phenolic hydroxyl group of the resin (A)) Oxidation) is considered to cause a dehydrogenation reaction and increase the molecular weight of the resin.
  • a resist underlayer film having a hydrogen content of 30 atom% or less, particularly 20 to 30 atom%, more preferably 20 to 28 atom% can be obtained.
  • the method for measuring the hydrogen content in the resist underlayer film is the same as in the examples described later.
  • the coating film is usually cured by heating the coating film to form a resist underlayer film.
  • a predetermined photocuring agent is added to the resist underlayer film forming composition.
  • crosslinking agent By containing (crosslinking agent), the exposure process with respect to the heated coating film can be provided, photocured, and a resist underlayer film can also be formed.
  • the radiation exposed at this time is visible light, ultraviolet light, far ultraviolet light, X-ray, electron beam, ⁇ -ray, molecular beam, It is appropriately selected from an ion beam or the like.
  • thermosetting agent and / or a photocuring agent crosslinking agent
  • a crosslinking step by exposure and / or heating may be provided to partially crosslink the resin (A) in the coating film.
  • the resist underlayer film of the present invention is formed by forming a resist underlayer film on a substrate to be processed, forming a resist pattern on the resist underlayer film, and then transferring the resist pattern once to the resist underlayer film. After the film pattern is formed, this lower layer film pattern is used as an etching mask and is used in a multilayer resist process that is transferred to a substrate to be processed.
  • the resist underlayer film can be formed of a resist underlayer film forming composition containing a resin having a phenolic hydroxyl group and a solvent, and has a hydrogen content of 20 to 30 atom%.
  • the resist underlayer film forming composition is not particularly limited, for example, the above-described resist underlayer film forming composition of the present invention can be used.
  • the resist underlayer film has a hydrogen content of 20 to 30 atom%, preferably 20 to 28 atom%.
  • the method for measuring the hydrogen content in the resist underlayer film is the same as in the examples described later.
  • the method for forming the resist underlayer film is not particularly limited, and can be obtained, for example, by the above-described resist underlayer film forming method of the present invention.
  • step (1) a resist underlayer film forming composition is applied on a substrate to be processed and the resist underlayer film is formed.
  • a step of forming a film (hereinafter referred to as “step (1)"), and (2) a step of applying a resist composition on the obtained resist underlayer film to form a resist film (hereinafter referred to as “step (“ 2) "), and (3) a step of exposing the resist film by selectively irradiating the resulting resist film with radiation through a photomask (hereinafter referred to as” step (3) ").
  • process (4) developing the exposed resist film to form a resist pattern
  • step (5) using the resist pattern as a mask (etching mask).
  • step (5) a step of forming a pattern by dry etching the bottom layer film and the substrate to be processed
  • a resist underlayer film is formed on the substrate to be processed by the resist underlayer film forming method described above.
  • the resist underlayer film forming method the above description can be applied as it is.
  • the thickness of the resist underlayer film formed in this step (1) is usually 0.1 to 5 ⁇ m.
  • middle layer on a resist lower layer film may be further provided as needed.
  • This intermediate layer is a layer provided with these functions in order to further supplement the functions of the resist underlayer film and / or the resist film in the formation of the resist pattern, or to obtain the functions that they do not have.
  • the antireflection film is formed as an intermediate layer, the antireflection function of the resist underlayer film can be further supplemented.
  • This intermediate layer can be formed of an organic compound or an inorganic oxide.
  • organic compounds include materials marketed under the trade names such as “DUV-42”, “DUV-44”, “ARC-28”, and “ARC-29” manufactured by Brewer Science, and Rohm and Haas.
  • Commercially available materials such as “AR-3” and “AR-19” manufactured by the company can be used.
  • inorganic oxides include materials marketed under the trade names such as “NFC SOG01” and “NFC SOG04” manufactured by JSR, polysiloxane formed by CVD, titanium oxide, alumina oxide, and oxide. Tungsten or the like can be used.
  • the method for forming the intermediate layer is not particularly limited, and for example, a coating method, a CVD method, or the like can be used. Among these, the coating method is preferable. When the coating method is used, the intermediate layer can be formed continuously after forming the resist underlayer film.
  • the film thickness of the intermediate layer is not particularly limited, and is appropriately selected according to the function required for the intermediate layer, but is preferably in the range of 10 to 3000 nm, more preferably 20 to 300 nm.
  • the film thickness of this intermediate layer is less than 10 nm, the intermediate layer may not be removed during the etching of the resist underlayer film.
  • the thickness exceeds 3000 nm, a difference in processing conversion occurs remarkably when the resist pattern is transferred to the intermediate layer.
  • a resist film is formed on the resist underlayer film and / or the intermediate layer using the resist composition solution.
  • the resist composition solution is applied so that the resulting resist film has a predetermined film thickness, and then pre-baked to volatilize the solvent in the film and form a resist film.
  • the resist composition solution include a positive or negative chemically amplified resist composition containing a photoacid generator, a positive resist composition comprising an alkali-soluble resin and a quinonediazide-based photosensitizer, and an alkali-soluble resin.
  • a negative resist composition composed of a crosslinking agent and the like.
  • the solid content concentration of the resist composition solution when applied on the resist underlayer film or intermediate layer is usually about 5 to 50% by mass, and is generally filtered through a filter having a pore diameter of about 0.2 ⁇ m, for example. Used.
  • the said resist composition solution can also use a commercially available thing as it is.
  • the method for applying the resist composition solution is not particularly limited, and can be performed by, for example, a spin coating method.
  • the pre-baking temperature is appropriately adjusted according to the type of resist composition solution used and the like, but is usually about 30 to 200 ° C., preferably 50 to 150 ° C.
  • a predetermined region of the obtained resist film is irradiated with radiation through a photomask and selectively exposed.
  • the radiation used for the exposure depending on the type of acid generator used in the resist composition, Appropriately selected from visible light, ultraviolet light, far ultraviolet light, X-ray, electron beam, ⁇ -ray, molecular beam, ion beam, etc., but is preferably far ultraviolet light, particularly KrF excimer laser (248 nm), ArF excimer laser.
  • a resist pattern is formed by developing the exposed resist film with a developer.
  • the developer is appropriately selected according to the type of resist composition used.
  • An alkaline aqueous solution such as nonene is used.
  • an appropriate amount of a water-soluble organic solvent for example, an alcohol such as methanol or ethanol, or a surfactant can be added to these
  • post-baking can be performed after the exposure before development in order to improve resolution, pattern profile, developability, and the like.
  • the post-baking temperature is appropriately adjusted according to the type of resist composition used, but is usually about 50 to 200 ° C., preferably 80 to 150 ° C.
  • the resist pattern is used as a mask, and the pattern is transferred to the intermediate layer and / or the resist underlayer film by performing dry etching of the resist underlayer film using, for example, gas plasma such as oxygen plasma.
  • gas plasma such as oxygen plasma.
  • the substrate to be processed is processed.
  • a predetermined pattern for substrate processing can be formed by appropriately performing the steps (1) to (5).
  • Mw weight average molecular weight
  • G2000HXL: 2, G3000HXL: 1 manufactured by Tosoh Corporation
  • flow rate 1.0 ml / min
  • elution solvent tetrahydrofuran
  • column temperature Measurement was performed by a gel permeation chromatograph (detector: differential refractometer) using monodisperse polystyrene as a standard under analysis conditions of 40 ° C., and the results are also shown in Table 1.
  • CA-1 acenaphthylene / hydroxymethylacenaphthylene copolymer (molar ratio; 1: 1, Mw; 1600)
  • CA-2 acenaphthylene / hydroxystyrene copolymer (molar ratio; 1: 1, Mw; 2300)
  • CA-3 Phenol / formaldehyde condensate (Mw; 1800)
  • CA-4 1-naphthol / formaldehyde condensate (Mw; 1500)
  • CA-5 2,7-dihydroxynaphthalene / propionaldehyde condensate (Mw; 1600)
  • resist underlayer film (Example 1)
  • the resist underlayer film forming composition (U-1) is applied onto a substrate to be processed by spin coating, and baked (baked) in an air atmosphere at 350 ° C. for 120 seconds.
  • a film was formed to obtain a substrate with a resist underlayer film (Example 1) in which a resist underlayer film was formed on a substrate to be processed.
  • two types of processing substrates a silicon wafer and a TEOS substrate, are used as processing substrates, a resist underlayer film is formed on each processing substrate, and two types of resist underlayer films are attached.
  • a substrate was obtained. Further, a resist underlayer film having a thickness of 300 nm was formed on the silicon wafer, and a resist underlayer film having a thickness of 500 nm was formed on the TEOS substrate.
  • Examples 2 to 22 and Comparative Examples 1 to 8 In the same manner as in Example 1, a resist underlayer film was formed on each substrate to be processed using two types of substrates to be processed, that is, a silicon wafer and a TEOS substrate, and a substrate with a resist underlayer film (Examples 2 to 22, and Comparative Examples 1 to 8) were obtained.
  • ⁇ Element composition of resist underlayer film (measurement of hydrogen content)>
  • the content (mass%) of carbon, hydrogen, oxygen, and nitrogen of the resist underlayer film in each substrate with a resist underlayer film using a silicon wafer as the substrate to be processed is measured using an organic element analyzer (manufactured by J Science Co., Ltd. Measurement was performed using “CHN coder JM10”). Thereafter, the number of atoms of each element contained in the film is calculated by [weight-converted value of each element (mass%) / mass of each element (g)], and then [number of hydrogen atoms in film / in film] From the total number of atoms, the hydrogen content (atom%) after the dehydrogenation reaction was determined.
  • Each substrate with a resist underlayer film using a silicon wafer as a substrate to be processed is immersed in propyl glycol monomethyl ether acetate for 1 minute at room temperature, and the film thickness change rate of the resist underlayer film before and after the immersion is measured using a spectroscopic ellipsometer UV1280E (KLA-TENCOR The measurement was performed using The evaluation criteria were “ ⁇ ” when the film thickness change rate was 0%, and “X” when the film thickness change rate exceeded 0%.
  • etching resistance For each substrate with a resist underlayer film using a silicon wafer as the substrate to be processed, CF 4 / Ar / O 2 (CF 4 : 40 mL / min, using an etching apparatus (manufactured by Shinko Seiki Co., Ltd., model number “EXAM”), The resist underlayer film was etched at Ar: 20 mL / min, O 2 : 5 mL / min, pressure: 20 Pa, RF power: 200 W, processing time: 40 seconds, temperature: 15 ° C.) The film thickness was measured, the etching rate was calculated, and the etching resistance was evaluated.
  • the etching rate was calculated by forming a reference resist underlayer film using a resist underlayer film forming composition (trade name “NFC CT08”) manufactured by JSR.
  • the evaluation criteria were “ ⁇ ” when the etching rate was less than + 10% as compared with the reference resist underlayer film, and “X” when the etching rate was + 10% or more.
  • Each substrate with a resist underlayer film using a TEOS substrate as a substrate to be processed is used.
  • an intermediate layer composition solution for a three-layer resist process (manufactured by JSR, trade name “NFC SOG080”) ) was spin-coated and heated on a hot plate at 200 ° C. for 60 seconds and further at 300 ° C. for 60 seconds to form an intermediate layer having a thickness of 50 nm.
  • an ArF resist composition (trade name “AR1682J” manufactured by JSR Corporation) is spin-coated on this intermediate layer, and prebaked on a hot plate at 130 ° C.
  • Resist film 200 nm-thick photoresist film ( Resist film) was formed. Thereafter, exposure was performed for an optimal exposure time through a mask pattern using an ArF excimer laser exposure apparatus (lens numerical aperture 0.78, exposure wavelength 193 nm) manufactured by NIKON. Next, after post-baking on a hot plate at 130 ° C. for 90 seconds, using an aqueous solution of tetramethylammonium hydroxide having a concentration of 2.38%, developing at 25 ° C. for 1 minute, washing with water and drying, a positive type for ArF A resist pattern was formed. Next, the formed resist pattern is transferred to an intermediate layer using a dry etching method to form an intermediate layer pattern.
  • ArF excimer laser exposure apparatus las numerical aperture 0.78, exposure wavelength 193 nm
  • this intermediate layer pattern as a mask, the pattern is transferred to the resist underlayer using a dry etching method. Then, a resist underlayer film pattern was formed on the resist underlayer film. Further, using this resist underlayer film pattern as a mask, a pattern was formed on the TEOS substrate to a depth of 300 nm with CF 4 / Ar / O 2 . And in order to evaluate bending tolerance, the lower layer film pattern shape was observed with the scanning electron microscope, and bending tolerance was evaluated. The evaluation criteria were “ ⁇ ” when the lower layer film pattern was not bent and “X” when the lower layer film pattern was bent.
  • the resist underlayer formed by the resist underlayer film forming composition containing a resin obtained by a condensation reaction of an aromatic compound having 2 or more phenolic hydroxyl groups and having 6 to 10 carbon atoms and an aldehyde compound It was confirmed that the film had good film curability, etching resistance, and bending resistance.
  • the resist underlayer film forming composition of the present invention it is possible to form a resist underlayer film that has excellent etching resistance and does not bend the underlayer film pattern when the substrate to be processed is etched. Therefore, it can be used very suitably for fine processing in a lithography process.
  • a dry etching process it has precise pattern transfer performance and good etching selectivity, and there is little over-etching of the resist underlayer film, and the resist pattern can be faithfully transferred to the substrate to be processed with good reproducibility.
  • the lower layer film pattern is not bent when the substrate to be processed is etched, an improvement in yield can be expected in microfabrication in the lithography process, particularly in the manufacture of highly integrated circuit elements.
  • the resist underlayer film forming method of the present invention is extremely useful as a lithography process, particularly as a process for manufacturing highly integrated circuit elements.
  • a resist underlayer film forming composition comprising a resin having a phenolic hydroxyl group and a solvent,
  • the resin having a phenolic hydroxyl group is an aromatic compound having 6 to 10 carbon atoms having two phenolic hydroxyl groups and at least one selected from formaldehyde, paraformaldehyde, trioxane, furfural, benzaldehyde, vanillin and naphthaldehyde.
  • a composition for forming a resist underlayer film which is obtained by a condensation reaction with an aldehyde derivative.
  • the method includes a step of forming a resist underlayer film by heating a coating film obtained using the composition for forming a resist underlayer film according to [2], wherein the heating atmosphere is in the air, A resist underlayer film forming method, wherein the heating temperature is 300 to 550 ° C. and the heating time is 30 to 600 seconds.

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  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)

Abstract

La présente invention concerne un film de sous-couche de réserve qui a une excellente résistance à la gravure et qui, particulièrement durant un processus de gravure à sec, est moins susceptible d'entraîner la flexion du gabarit de film de sous-couche, et permet ainsi de réaliser le transfert d'un gabarit de réserve sur un substrat à traiter fidèlement et avec une bonne reproductibilité. La présente invention concerne également la composition et le procédé de formation de ce film de sous-couche de réserve. Ce film de sous-couche de réserve est utilisé dans un processus de réserve multicouche comprenant la formation de ce film sur un substrat à traiter, la formation d'un gabarit de réserve sur ce film, le transfert immédiat de ce gabarit de réserve sur le film pour former un gabarit de film de sous-couche, puis le transfert sur le substrat à traiter, en utilisant le gabarit de film de sous-couche comme masque de gravure. La teneur en atomes d'hydrogène du film de sous-couche de réserve est de 20 à 30 % d'atomes.
PCT/JP2009/052931 2008-03-28 2009-02-19 Film de sous-couche de réserve, composition et procédé de formation de ce film WO2009119201A1 (fr)

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WO2012176767A1 (fr) * 2011-06-24 2012-12-27 日産化学工業株式会社 Composition formant un film de sous-couche de résist contenant une résine polyhydroxybenzène novolaque
EP2650729A1 (fr) * 2010-12-09 2013-10-16 Nissan Chemical Industries, Ltd. Composition servant à former une pellicule sous-jacente résistante contenant une résine novolac au carbazole contenant un groupe hydroxyle
WO2014178348A1 (fr) * 2013-04-30 2014-11-06 明和化成株式会社 Résine phénolique, composition de résine époxy et produit durci l'utilisant, stratifié recouvert de cuivre et matériau d'encapsulation de semi-conducteur
US20150376202A1 (en) * 2013-02-08 2015-12-31 Mitsubishi Gas Chemical Company, Inc. Compound, material for forming underlayer film for lithography, underlayer film for lithography and pattern forming method
JP2017107185A (ja) * 2015-11-30 2017-06-15 ローム・アンド・ハース・エレクトロニック・マテリアルズ・コリア・リミテッド オーバーコートされたフォトレジストと共に用いるためのコーティング組成物
JP2017125182A (ja) * 2016-01-08 2017-07-20 Jsr株式会社 レジスト下層膜形成用重合体及びその製造方法、レジスト下層膜形成用組成物、レジスト下層膜並びにパターニングされた基板の製造方法
US9828355B2 (en) 2013-02-08 2017-11-28 Mitsubishi Gas Chemical Company, Inc. Compound, material for forming underlayer film for lithography, underlayer film for lithography and pattern forming method
US20170349564A1 (en) 2014-12-25 2017-12-07 Mitsubishi Gas Chemical Company, Inc. Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and purification method
JPWO2017069063A1 (ja) * 2015-10-19 2018-08-09 日産化学工業株式会社 長鎖アルキル基含有ノボラックを含むレジスト下層膜形成組成物
US10179828B2 (en) * 2015-01-16 2019-01-15 Dic Corporation Curable composition for permanent resist films, and permanent resist film
EP3508919A1 (fr) * 2017-12-26 2019-07-10 Shin-Etsu Chemical Co., Ltd. Procédé de production de condensat de dihydroxynaphtalène et condensat de dihydroxynaphtalène
US10377734B2 (en) 2013-02-08 2019-08-13 Mitsubishi Gas Chemical Company, Inc. Resist composition, method for forming resist pattern, polyphenol derivative for use in the composition
US11137686B2 (en) 2015-08-31 2021-10-05 Mitsubishi Gas Chemical Company, Inc. Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, and resist pattern forming method
US11143962B2 (en) 2015-08-31 2021-10-12 Mitsubishi Gas Chemical Company, Inc. Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, pattern forming method, resin, and purification method
US11243467B2 (en) 2015-09-10 2022-02-08 Mitsubishi Gas Chemical Company, Inc. Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method
US11256170B2 (en) 2015-03-31 2022-02-22 Mitsubishi Gas Chemical Company, Inc. Compound, resist composition, and method for forming resist pattern using it
US11480877B2 (en) 2015-03-31 2022-10-25 Mitsubishi Gas Chemical Company, Inc. Resist composition, method for forming resist pattern, and polyphenol compound used therein
WO2023132263A1 (fr) * 2022-01-07 2023-07-13 東京応化工業株式会社 Composition de formation de film de sous-couche de réserve, procédé de formation de motif de réserve, procédé de formation pour motif de film de sous-couche de réserve, et procédé de formation de motif

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JP2005156816A (ja) * 2003-11-25 2005-06-16 Tokyo Ohka Kogyo Co Ltd 下地材及び多層レジストパターン形成方法
WO2006132088A1 (fr) * 2005-06-10 2006-12-14 Nissan Chemical Industries, Ltd. Composition formant un film de sous-couche de type enrobage contenant un dérivé de résine de naphtalène pour la lithographie
JP2008039815A (ja) * 2006-08-01 2008-02-21 Shin Etsu Chem Co Ltd レジスト下層膜材料並びにそれを用いたレジスト下層膜基板およびパターン形成方法
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US9263285B2 (en) 2010-12-09 2016-02-16 Nissan Chemical Industries, Ltd. Composition for forming a resist underlayer film including hydroxyl group-containing carbazole novolac resin
EP2650729A1 (fr) * 2010-12-09 2013-10-16 Nissan Chemical Industries, Ltd. Composition servant à former une pellicule sous-jacente résistante contenant une résine novolac au carbazole contenant un groupe hydroxyle
EP2650729A4 (fr) * 2010-12-09 2014-07-16 Nissan Chemical Ind Ltd Composition servant à former une pellicule sous-jacente résistante contenant une résine novolac au carbazole contenant un groupe hydroxyle
WO2012176767A1 (fr) * 2011-06-24 2012-12-27 日産化学工業株式会社 Composition formant un film de sous-couche de résist contenant une résine polyhydroxybenzène novolaque
US9809601B2 (en) * 2013-02-08 2017-11-07 Mitsubishi Gas Chemical Company, Inc. Compound, material for forming underlayer film for lithography, underlayer film for lithography and pattern forming method
US20150376202A1 (en) * 2013-02-08 2015-12-31 Mitsubishi Gas Chemical Company, Inc. Compound, material for forming underlayer film for lithography, underlayer film for lithography and pattern forming method
US9828355B2 (en) 2013-02-08 2017-11-28 Mitsubishi Gas Chemical Company, Inc. Compound, material for forming underlayer film for lithography, underlayer film for lithography and pattern forming method
US10377734B2 (en) 2013-02-08 2019-08-13 Mitsubishi Gas Chemical Company, Inc. Resist composition, method for forming resist pattern, polyphenol derivative for use in the composition
WO2014178348A1 (fr) * 2013-04-30 2014-11-06 明和化成株式会社 Résine phénolique, composition de résine époxy et produit durci l'utilisant, stratifié recouvert de cuivre et matériau d'encapsulation de semi-conducteur
US20170349564A1 (en) 2014-12-25 2017-12-07 Mitsubishi Gas Chemical Company, Inc. Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and purification method
US10745372B2 (en) 2014-12-25 2020-08-18 Mitsubishi Gas Chemical Company, Inc. Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and purification method
US10179828B2 (en) * 2015-01-16 2019-01-15 Dic Corporation Curable composition for permanent resist films, and permanent resist film
US11480877B2 (en) 2015-03-31 2022-10-25 Mitsubishi Gas Chemical Company, Inc. Resist composition, method for forming resist pattern, and polyphenol compound used therein
US11256170B2 (en) 2015-03-31 2022-02-22 Mitsubishi Gas Chemical Company, Inc. Compound, resist composition, and method for forming resist pattern using it
US11137686B2 (en) 2015-08-31 2021-10-05 Mitsubishi Gas Chemical Company, Inc. Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, and resist pattern forming method
US11143962B2 (en) 2015-08-31 2021-10-12 Mitsubishi Gas Chemical Company, Inc. Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, pattern forming method, resin, and purification method
US11243467B2 (en) 2015-09-10 2022-02-08 Mitsubishi Gas Chemical Company, Inc. Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method
US11572430B2 (en) 2015-09-10 2023-02-07 Mitsubishi Gas Chemical Company, Inc. Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method
JPWO2017069063A1 (ja) * 2015-10-19 2018-08-09 日産化学工業株式会社 長鎖アルキル基含有ノボラックを含むレジスト下層膜形成組成物
JP7176844B2 (ja) 2015-10-19 2022-11-22 日産化学株式会社 長鎖アルキル基含有ノボラックを含むレジスト下層膜形成組成物
JP2017107185A (ja) * 2015-11-30 2017-06-15 ローム・アンド・ハース・エレクトロニック・マテリアルズ・コリア・リミテッド オーバーコートされたフォトレジストと共に用いるためのコーティング組成物
JP2017125182A (ja) * 2016-01-08 2017-07-20 Jsr株式会社 レジスト下層膜形成用重合体及びその製造方法、レジスト下層膜形成用組成物、レジスト下層膜並びにパターニングされた基板の製造方法
EP3508919A1 (fr) * 2017-12-26 2019-07-10 Shin-Etsu Chemical Co., Ltd. Procédé de production de condensat de dihydroxynaphtalène et condensat de dihydroxynaphtalène
US11267937B2 (en) 2017-12-26 2022-03-08 Shin-Etsu Chemical Co., Ltd. Method for producing dihydroxynaphthalene condensate and dihydroxynaphthalene condensate
WO2023132263A1 (fr) * 2022-01-07 2023-07-13 東京応化工業株式会社 Composition de formation de film de sous-couche de réserve, procédé de formation de motif de réserve, procédé de formation pour motif de film de sous-couche de réserve, et procédé de formation de motif

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