WO2009069687A1 - 共役系化合物、含窒素縮合環化合物、含窒素縮合環重合体、有機薄膜及び有機薄膜素子 - Google Patents

共役系化合物、含窒素縮合環化合物、含窒素縮合環重合体、有機薄膜及び有機薄膜素子 Download PDF

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WO2009069687A1
WO2009069687A1 PCT/JP2008/071520 JP2008071520W WO2009069687A1 WO 2009069687 A1 WO2009069687 A1 WO 2009069687A1 JP 2008071520 W JP2008071520 W JP 2008071520W WO 2009069687 A1 WO2009069687 A1 WO 2009069687A1
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nitrogenated
condensed
thin film
ring
organic thin
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PCT/JP2008/071520
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English (en)
French (fr)
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Yoshio Aso
Yutaka Ie
Makoto Okabe
Masashi Nitani
Masato Ueda
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Osaka University
Sumitomo Chemical Company, Limited
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Priority claimed from JP2008220031A external-priority patent/JP5363771B2/ja
Application filed by Osaka University, Sumitomo Chemical Company, Limited filed Critical Osaka University
Priority to US12/745,481 priority Critical patent/US8378338B2/en
Priority to EP08853653A priority patent/EP2223918A4/en
Priority to CN200880118465XA priority patent/CN101878207A/zh
Publication of WO2009069687A1 publication Critical patent/WO2009069687A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D277/00—Heterocyclic compounds containing 1,3-thiazole or hydrogenated 1,3-thiazole rings
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    • C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/02—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
    • C07D333/04—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings not substituted on the ring sulphur atom
    • C07D333/06—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings not substituted on the ring sulphur atom with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to the ring carbon atoms
    • C07D333/22—Radicals substituted by doubly bound hetero atoms, or by two hetero atoms other than halogen singly bound to the same carbon atom
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/50—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
    • C07D333/78—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems condensed with rings other than six-membered or with ring systems containing such rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D409/00—Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms
    • C07D409/14—Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing three or more hetero rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D417/00—Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and sulfur atoms as the only ring hetero atoms, not provided for by group C07D415/00
    • C07D417/14—Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and sulfur atoms as the only ring hetero atoms, not provided for by group C07D415/00 containing three or more hetero rings
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    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thin Film Transistor (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
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Abstract

　第一の発明群においては、下記一般式（Ｉ）で表される基又は下記一般式（ＩＩ）で表される基を２以上有する共役系化合物を提供する。 ［式中、Ａｒ及びＡｒ’のいずれか一方は炭素数６以上の２価の芳香族炭化水素基、他方は炭素数４以上の２価の複素環基（これらの基は置換基を有してもよい。但し、これらの基全体としてフッ素原子を含有しない）を示し、Ｒ１及びＲ２はそれぞれ独立に、水素原子、ハロゲン原子又は１価の基、Ａｒ’’は、３価の芳香族炭化水素基又は３価の複素環基をそれぞれ示す。但し、共役系化合物が、一般式（Ｉ）で表される基を２以上有する場合は、当該基以外の部分はフッ素原子を含有しない。］ 　第二の発明群においては、下記一般式（α－Ｉ）で表される含窒素縮合環化合物を提供する。 ［式（α－Ｉ）中、Ｒ２１及びＲ２２は各々独立に、水素原子、ハロゲン原子又は置換基で置換されていてもよい１価の基を示し、Ｚ２１及びＺ２２は各々独立に、下記式（α－ｉ）～（α－ｉｘ）で表される基のいずれかを示す。 ［式中、Ｒ２３、Ｒ２４、Ｒ２５及びＲ２６は各々独立に、水素原子、ハロゲン原子又は１価の基を示し、Ｒ２３とＲ２４とは互いに結合して環を形成していてもよい。なお、式（α－ｖｉｉｉ）で表される基は左右反転していてもよい。］
PCT/JP2008/071520 2007-11-30 2008-11-27 共役系化合物、含窒素縮合環化合物、含窒素縮合環重合体、有機薄膜及び有機薄膜素子 WO2009069687A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/745,481 US8378338B2 (en) 2007-11-30 2008-11-27 Conjugated compound, nitrogenated condensed-ring compound, nitrogenated condensed-ring polymer, organic thin film, and organic thin film element
EP08853653A EP2223918A4 (en) 2007-11-30 2008-11-27 CONJUGATED CONNECTION, CONNECTION WITH NITROGENATED CONDENSED RING, POLYMER WITH NITROGENATED CONDENSED RING, ORGANIC THIN FILM AND ITEM WITH ORGANIC THIN FILM
CN200880118465XA CN101878207A (zh) 2007-11-30 2008-11-27 共轭系化合物、含氮缩合环化合物、含氮缩合环聚合物、有机薄膜以及有机薄膜元件

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2007311381 2007-11-30
JP2007-311381 2007-11-30
JP2008031972 2008-02-13
JP2008-031972 2008-02-13
JP2008220031A JP5363771B2 (ja) 2008-02-13 2008-08-28 含窒素縮合環化合物、含窒素縮合環重合体、有機薄膜及び有機薄膜素子
JP2008-220031 2008-08-28

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Country Status (6)

Country Link
US (1) US8378338B2 (ja)
EP (2) EP2223918A4 (ja)
KR (1) KR20100099225A (ja)
CN (1) CN101878207A (ja)
TW (1) TWI421246B (ja)
WO (1) WO2009069687A1 (ja)

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WO2010104042A1 (ja) * 2009-03-11 2010-09-16 住友化学株式会社 含フッ素重合体及びこれを用いた有機薄膜
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WO2012014943A1 (ja) * 2010-07-28 2012-02-02 住友化学株式会社 縮合環化合物、有機薄膜及び有機薄膜素子
CN102344553A (zh) * 2010-08-03 2012-02-08 海洋王照明科技股份有限公司 一类萘四羧酸二酰亚胺有机半导体材料及其制备方法和应用
WO2012016925A2 (en) 2010-08-05 2012-02-09 Basf Se Semiconductor materials prepared from bridged bithiazole copolymers
WO2012070582A1 (ja) * 2010-11-24 2012-05-31 住友化学株式会社 共役系化合物、並びにこれを用いた有機薄膜及び有機薄膜素子
WO2012105511A1 (ja) * 2011-01-31 2012-08-09 住友化学株式会社 含窒素縮合環化合物、含窒素縮合環重合体、有機薄膜及び有機薄膜素子
WO2012118128A1 (ja) * 2011-03-03 2012-09-07 住友化学株式会社 重合体、この重合体を用いた有機薄膜及び有機薄膜素子

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JP5426199B2 (ja) * 2009-03-11 2014-02-26 住友化学株式会社 分岐型化合物、並びにこれを用いた有機薄膜及び有機薄膜素子
JP5792482B2 (ja) 2010-03-04 2015-10-14 住友化学株式会社 含窒素縮合環化合物、含窒素縮合環重合体、有機薄膜及び有機薄膜素子
WO2013023106A1 (en) * 2011-08-10 2013-02-14 Georgia Tech Research Corporation Coupled heteroaryl compounds via rearrangement of halogenated heteroaromatics followed by oxidative coupling (acyl moieties)
WO2013023108A1 (en) * 2011-08-10 2013-02-14 Georgia Tech Research Corporation Coupled heteroaryl compounds via rearrangement of halogenated heteroaromatics followed by oxidative coupling (heteroarylene spacer moiety)
WO2013023109A1 (en) * 2011-08-10 2013-02-14 Georgia Tech Research Corporation Coupled heteroaryl compounds via rearrangement of halogenated heteroaromatics followed by oxidative coupling (coupled tricyclic core compounds)
US20140221664A1 (en) * 2011-08-10 2014-08-07 Georgia Tech Research Corporation Coupled heteroaryl compounds via rearrangement of halogenated heteroaromatics followed by oxidative coupling (electron withdrawing groups)
JP5780402B2 (ja) * 2011-12-27 2015-09-16 ソニー株式会社 半導体素子、半導体素子の製造方法、固体撮像装置および電子機器
US9234112B2 (en) * 2013-06-05 2016-01-12 Korea Institute Of Machinery & Materials Metal precursor powder, method of manufacturing conductive metal layer or pattern, and device including the same
KR102282495B1 (ko) 2014-07-21 2021-07-27 삼성전자주식회사 화합물, 유기 광전자 소자 및 이미지 센서
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