WO2009066551A1 - スパッタリング装置及び成膜方法 - Google Patents

スパッタリング装置及び成膜方法 Download PDF

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Publication number
WO2009066551A1
WO2009066551A1 PCT/JP2008/069732 JP2008069732W WO2009066551A1 WO 2009066551 A1 WO2009066551 A1 WO 2009066551A1 JP 2008069732 W JP2008069732 W JP 2008069732W WO 2009066551 A1 WO2009066551 A1 WO 2009066551A1
Authority
WO
WIPO (PCT)
Prior art keywords
work
sputtering particles
film forming
forming method
sputtering apparatus
Prior art date
Application number
PCT/JP2008/069732
Other languages
English (en)
French (fr)
Inventor
Kuniaki Horie
Junichiro Yoshioka
Original Assignee
Ebara-Udylite Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara-Udylite Co., Ltd. filed Critical Ebara-Udylite Co., Ltd.
Priority to CN2008801165610A priority Critical patent/CN101861409B/zh
Publication of WO2009066551A1 publication Critical patent/WO2009066551A1/ja
Priority to HK10111009.4A priority patent/HK1144590A1/xx

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

ターゲット（１１）とワーク（Ｗ）との間には、ＲＦコイル（２３）が配され、ターゲット（１１）からワーク（Ｗ）に向けて飛散するスパッタ粒子は、ＲＦコイル（２３）に高周波電力が供給されるとによってプラスイオンにイオン化される。ワーク（Ｗ）またはワーク（Ｗ）を保持するワークホルダ（８）には、バイアス電源（２６）によってマイナスのバイアスが与えられ、イオン化されたスパッタ粒子を吸着する。バイアス電源（２６）に流れる電流は、付着したスパッタ粒子が直ちに電気的に中性とならないように制限される。
PCT/JP2008/069732 2007-11-19 2008-10-30 スパッタリング装置及び成膜方法 WO2009066551A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2008801165610A CN101861409B (zh) 2007-11-19 2008-10-30 溅射装置以及成膜方法
HK10111009.4A HK1144590A1 (en) 2007-11-19 2010-11-26 Sputtering apparatus and film forming method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007299137A JP5464800B2 (ja) 2007-11-19 2007-11-19 スパッタリング装置及び成膜方法
JP2007-299137 2007-11-19

Publications (1)

Publication Number Publication Date
WO2009066551A1 true WO2009066551A1 (ja) 2009-05-28

Family

ID=40667377

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/069732 WO2009066551A1 (ja) 2007-11-19 2008-10-30 スパッタリング装置及び成膜方法

Country Status (5)

Country Link
JP (1) JP5464800B2 (ja)
KR (1) KR20100080912A (ja)
CN (1) CN101861409B (ja)
HK (1) HK1144590A1 (ja)
WO (1) WO2009066551A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115772652A (zh) * 2022-12-05 2023-03-10 唐山斯腾光电科技有限公司 一种红外窗片加工用溅射镀膜设备

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102839352A (zh) * 2011-06-21 2012-12-26 无锡尚德太阳能电力有限公司 一种薄膜沉积装置及方法
CN103060759A (zh) * 2011-10-21 2013-04-24 鸿富锦精密工业（深圳）有限公司 镀膜装置
CN103074584A (zh) * 2011-10-25 2013-05-01 鸿富锦精密工业（深圳）有限公司 镀膜装置
CN104131258B (zh) * 2014-06-17 2017-01-11 北京大学深圳研究生院 一种离子镀膜装置和离子镀膜方法
JP6476261B1 (ja) * 2017-10-17 2019-02-27 株式会社神戸製鋼所 成膜方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10229057A (ja) * 1996-11-21 1998-08-25 Applied Materials Inc 誘導結合プラズマによるチャンバ内スパッタリングにおいて側壁カバレージを改善する方法及び装置
JPH10259477A (ja) * 1997-03-07 1998-09-29 Applied Materials Inc 電子ビーム及び磁界を用いてイオン化金属プラズマを生成する方法
JP2002053955A (ja) * 2000-08-04 2002-02-19 Canon Inc イオン化成膜装置及びイオン化成膜方法
JP2007248562A (ja) * 2006-03-14 2007-09-27 Shincron:Kk 光学物品およびその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002020861A (ja) * 2000-07-04 2002-01-23 Canon Inc 成膜方法及び成膜装置
US6551471B1 (en) * 1999-11-30 2003-04-22 Canon Kabushiki Kaisha Ionization film-forming method and apparatus
JP3950429B2 (ja) * 2003-03-20 2007-08-01 独立行政法人科学技術振興機構 化合物薄膜成膜装置及び化合物薄膜成膜方法
CN2734774Y (zh) * 2004-07-28 2005-10-19 雷卫武 双离子束共溅射淀积原子层纳米薄膜设备

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10229057A (ja) * 1996-11-21 1998-08-25 Applied Materials Inc 誘導結合プラズマによるチャンバ内スパッタリングにおいて側壁カバレージを改善する方法及び装置
JPH10259477A (ja) * 1997-03-07 1998-09-29 Applied Materials Inc 電子ビーム及び磁界を用いてイオン化金属プラズマを生成する方法
JP2002053955A (ja) * 2000-08-04 2002-02-19 Canon Inc イオン化成膜装置及びイオン化成膜方法
JP2007248562A (ja) * 2006-03-14 2007-09-27 Shincron:Kk 光学物品およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115772652A (zh) * 2022-12-05 2023-03-10 唐山斯腾光电科技有限公司 一种红外窗片加工用溅射镀膜设备

Also Published As

Publication number Publication date
KR20100080912A (ko) 2010-07-13
CN101861409A (zh) 2010-10-13
CN101861409B (zh) 2012-11-28
JP2009120925A (ja) 2009-06-04
JP5464800B2 (ja) 2014-04-09
HK1144590A1 (en) 2011-02-25

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