HK1144590A1 - Sputtering apparatus and film forming method - Google Patents

Sputtering apparatus and film forming method

Info

Publication number
HK1144590A1
HK1144590A1 HK10111009.4A HK10111009A HK1144590A1 HK 1144590 A1 HK1144590 A1 HK 1144590A1 HK 10111009 A HK10111009 A HK 10111009A HK 1144590 A1 HK1144590 A1 HK 1144590A1
Authority
HK
Hong Kong
Prior art keywords
film forming
forming method
sputtering apparatus
sputtering
film
Prior art date
Application number
HK10111009.4A
Other languages
English (en)
Inventor
Kuniaki Horie
Junichiro Yoshioka
Original Assignee
Ebara Udylite Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Udylite Kk filed Critical Ebara Udylite Kk
Publication of HK1144590A1 publication Critical patent/HK1144590A1/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
HK10111009.4A 2007-11-19 2010-11-26 Sputtering apparatus and film forming method HK1144590A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007299137A JP5464800B2 (ja) 2007-11-19 2007-11-19 スパッタリング装置及び成膜方法
PCT/JP2008/069732 WO2009066551A1 (ja) 2007-11-19 2008-10-30 スパッタリング装置及び成膜方法

Publications (1)

Publication Number Publication Date
HK1144590A1 true HK1144590A1 (en) 2011-02-25

Family

ID=40667377

Family Applications (1)

Application Number Title Priority Date Filing Date
HK10111009.4A HK1144590A1 (en) 2007-11-19 2010-11-26 Sputtering apparatus and film forming method

Country Status (5)

Country Link
JP (1) JP5464800B2 (ja)
KR (1) KR20100080912A (ja)
CN (1) CN101861409B (ja)
HK (1) HK1144590A1 (ja)
WO (1) WO2009066551A1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102839352A (zh) * 2011-06-21 2012-12-26 无锡尚德太阳能电力有限公司 一种薄膜沉积装置及方法
CN103060759A (zh) * 2011-10-21 2013-04-24 鸿富锦精密工业（深圳）有限公司 镀膜装置
CN103074584A (zh) * 2011-10-25 2013-05-01 鸿富锦精密工业（深圳）有限公司 镀膜装置
CN104131258B (zh) * 2014-06-17 2017-01-11 北京大学深圳研究生院 一种离子镀膜装置和离子镀膜方法
JP6476261B1 (ja) 2017-10-17 2019-02-27 株式会社神戸製鋼所 成膜方法
CN115772652A (zh) * 2022-12-05 2023-03-10 唐山斯腾光电科技有限公司 一种红外窗片加工用溅射镀膜设备

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW358964B (en) * 1996-11-21 1999-05-21 Applied Materials Inc Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US6599399B2 (en) * 1997-03-07 2003-07-29 Applied Materials, Inc. Sputtering method to generate ionized metal plasma using electron beams and magnetic field
US6551471B1 (en) * 1999-11-30 2003-04-22 Canon Kabushiki Kaisha Ionization film-forming method and apparatus
JP2002053955A (ja) * 2000-08-04 2002-02-19 Canon Inc イオン化成膜装置及びイオン化成膜方法
JP2002020861A (ja) * 2000-07-04 2002-01-23 Canon Inc 成膜方法及び成膜装置
JP3950429B2 (ja) * 2003-03-20 2007-08-01 独立行政法人科学技術振興機構 化合物薄膜成膜装置及び化合物薄膜成膜方法
CN2734774Y (zh) * 2004-07-28 2005-10-19 雷卫武 双离子束共溅射淀积原子层纳米薄膜设备
JP2007248562A (ja) * 2006-03-14 2007-09-27 Shincron:Kk 光学物品およびその製造方法

Also Published As

Publication number Publication date
CN101861409B (zh) 2012-11-28
CN101861409A (zh) 2010-10-13
WO2009066551A1 (ja) 2009-05-28
JP5464800B2 (ja) 2014-04-09
KR20100080912A (ko) 2010-07-13
JP2009120925A (ja) 2009-06-04

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20171030