WO2009063631A1 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
- Publication number
- WO2009063631A1 WO2009063631A1 PCT/JP2008/003291 JP2008003291W WO2009063631A1 WO 2009063631 A1 WO2009063631 A1 WO 2009063631A1 JP 2008003291 W JP2008003291 W JP 2008003291W WO 2009063631 A1 WO2009063631 A1 WO 2009063631A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- plasma
- treatment device
- plasma treatment
- antenna
- generating means
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
- H01J37/3277—Continuous moving of continuous material
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Treatment Of Fiber Materials (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008801158320A CN101855947B (zh) | 2007-11-14 | 2008-11-12 | 等离子体处理装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-296119 | 2007-11-14 | ||
JP2007296119A JP5138342B2 (ja) | 2007-11-14 | 2007-11-14 | プラズマ処理装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009063631A1 true WO2009063631A1 (ja) | 2009-05-22 |
Family
ID=40638487
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/003291 WO2009063631A1 (ja) | 2007-11-14 | 2008-11-12 | プラズマ処理装置 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5138342B2 (ja) |
KR (1) | KR101542270B1 (ja) |
CN (1) | CN101855947B (ja) |
TW (1) | TWI450644B (ja) |
WO (1) | WO2009063631A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5659808B2 (ja) * | 2011-01-17 | 2015-01-28 | 株式会社Ihi | アレイアンテナ式のcvdプラズマ装置及びアレイアンテナユニット |
JP5659809B2 (ja) * | 2011-01-17 | 2015-01-28 | 株式会社Ihi | 補助治具及びアレイアンテナ式のcvdプラズマ装置 |
KR20140060295A (ko) * | 2011-08-30 | 2014-05-19 | 가부시키가이샤 이엠디 | 플라즈마 처리 장치용 안테나 및 해당 안테나를 이용한 플라즈마 처리 장치 |
CN102560439A (zh) * | 2012-03-29 | 2012-07-11 | 雅视光学有限公司 | 等离子体表面处理方法及装置 |
CN103060778B (zh) * | 2013-01-23 | 2015-03-11 | 深圳市劲拓自动化设备股份有限公司 | 平板式pecvd装置 |
JP6373707B2 (ja) * | 2014-09-30 | 2018-08-15 | 株式会社Screenホールディングス | プラズマ処理装置 |
KR101847530B1 (ko) | 2016-10-31 | 2018-04-10 | (주)울텍 | 플라즈마 프로세싱 장치 |
US11646182B2 (en) * | 2019-12-18 | 2023-05-09 | Jiangsu Favored Nanotechnology Co., Ltd. | Coating apparatus and coating method |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08333684A (ja) * | 1995-04-03 | 1996-12-17 | Canon Inc | 堆積膜の形成方法 |
JP2003297275A (ja) * | 2002-04-05 | 2003-10-17 | Hitachi High-Technologies Corp | イオンビームミリング方法およびイオンビームミリング装置 |
JP2004339570A (ja) * | 2003-05-15 | 2004-12-02 | Sony Corp | プラズマcvd装置及びこれを用いた成膜方法 |
JP2006169562A (ja) * | 2004-12-14 | 2006-06-29 | Shinko Seiki Co Ltd | 表面処理装置 |
JP2007123008A (ja) * | 2005-10-27 | 2007-05-17 | Nissin Electric Co Ltd | プラズマ生成方法及び装置並びにプラズマ処理装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1223074B (it) * | 1986-11-19 | 1990-09-12 | Martin Processing Co Inc | Parabrezza di sicurezza e metodo per fabbricarlo |
JPS63134052A (ja) * | 1986-11-25 | 1988-06-06 | Kuraray Co Ltd | シ−ト状物のプラズマ処理装置 |
DE4117332C2 (de) * | 1991-05-31 | 1995-11-23 | Ivanovskij Ni Skij Eksperiment | Verfahren zur Behandlung von laufendem Substrat mit Hilfe eines elektrischen Entladungsplasmas und Vorrichtung zu dessen Durchführung |
TW422775B (en) * | 1996-04-18 | 2001-02-21 | Ga Tek Corp | Adhesiveless flexible laminate and process for making adhesiveless flexible laminate |
JP2001115265A (ja) * | 1999-10-14 | 2001-04-24 | Canon Inc | 高周波プラズマcvd法および高周波プラズマcvd装置 |
JP3897582B2 (ja) * | 2000-12-12 | 2007-03-28 | キヤノン株式会社 | 真空処理方法、真空処理装置、半導体装置の製造方法および半導体装置 |
JP2004228354A (ja) * | 2003-01-23 | 2004-08-12 | Japan Science & Technology Agency | プラズマ生成装置 |
JP4425167B2 (ja) * | 2005-03-22 | 2010-03-03 | 富士フイルム株式会社 | ガスバリア性フィルム、基材フィルムおよび有機エレクトロルミネッセンス素子 |
-
2007
- 2007-11-14 JP JP2007296119A patent/JP5138342B2/ja active Active
-
2008
- 2008-11-12 KR KR1020107009477A patent/KR101542270B1/ko active IP Right Grant
- 2008-11-12 CN CN2008801158320A patent/CN101855947B/zh active Active
- 2008-11-12 WO PCT/JP2008/003291 patent/WO2009063631A1/ja active Application Filing
- 2008-11-13 TW TW097143835A patent/TWI450644B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08333684A (ja) * | 1995-04-03 | 1996-12-17 | Canon Inc | 堆積膜の形成方法 |
JP2003297275A (ja) * | 2002-04-05 | 2003-10-17 | Hitachi High-Technologies Corp | イオンビームミリング方法およびイオンビームミリング装置 |
JP2004339570A (ja) * | 2003-05-15 | 2004-12-02 | Sony Corp | プラズマcvd装置及びこれを用いた成膜方法 |
JP2006169562A (ja) * | 2004-12-14 | 2006-06-29 | Shinko Seiki Co Ltd | 表面処理装置 |
JP2007123008A (ja) * | 2005-10-27 | 2007-05-17 | Nissin Electric Co Ltd | プラズマ生成方法及び装置並びにプラズマ処理装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2009123513A (ja) | 2009-06-04 |
KR101542270B1 (ko) | 2015-08-06 |
KR20100096068A (ko) | 2010-09-01 |
CN101855947A (zh) | 2010-10-06 |
CN101855947B (zh) | 2012-09-05 |
TW200939904A (en) | 2009-09-16 |
JP5138342B2 (ja) | 2013-02-06 |
TWI450644B (zh) | 2014-08-21 |
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