WO2009063631A1 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
WO2009063631A1
WO2009063631A1 PCT/JP2008/003291 JP2008003291W WO2009063631A1 WO 2009063631 A1 WO2009063631 A1 WO 2009063631A1 JP 2008003291 W JP2008003291 W JP 2008003291W WO 2009063631 A1 WO2009063631 A1 WO 2009063631A1
Authority
WO
WIPO (PCT)
Prior art keywords
plasma
treatment device
plasma treatment
antenna
generating means
Prior art date
Application number
PCT/JP2008/003291
Other languages
English (en)
French (fr)
Inventor
Yuichi Setsuhara
Akinori Ebe
Original Assignee
Emd Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Emd Corporation filed Critical Emd Corporation
Priority to CN2008801158320A priority Critical patent/CN101855947B/zh
Publication of WO2009063631A1 publication Critical patent/WO2009063631A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/3277—Continuous moving of continuous material

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Treatment Of Fiber Materials (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

　本発明は、生成されたプラズマを効率よく利用することができるプラズマ処理装置を提供することを目的としている。本発明に係るプラズマ処理装置１０は、真空容器１１と、真空容器１１の内部空間１１１に突出するように設けられたアンテナ（プラズマ生成手段）支持部１２と、アンテナ支持部１２に取り付けられた高周波アンテナ（プラズマ生成手段）１３と、を備えることを特徴とする。これにより、高周波アンテナが取り付けられる部分の面積が小さくなり、プラズマの利用効率が向上する。
PCT/JP2008/003291 2007-11-14 2008-11-12 プラズマ処理装置 WO2009063631A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2008801158320A CN101855947B (zh) 2007-11-14 2008-11-12 等离子体处理装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007296119A JP5138342B2 (ja) 2007-11-14 2007-11-14 プラズマ処理装置
JP2007-296119 2007-11-14

Publications (1)

Publication Number Publication Date
WO2009063631A1 true WO2009063631A1 (ja) 2009-05-22

Family

ID=40638487

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/003291 WO2009063631A1 (ja) 2007-11-14 2008-11-12 プラズマ処理装置

Country Status (5)

Country Link
JP (1) JP5138342B2 (ja)
KR (1) KR101542270B1 (ja)
CN (1) CN101855947B (ja)
TW (1) TWI450644B (ja)
WO (1) WO2009063631A1 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5659809B2 (ja) * 2011-01-17 2015-01-28 株式会社Ihi 補助治具及びアレイアンテナ式のｃｖｄプラズマ装置
JP5659808B2 (ja) * 2011-01-17 2015-01-28 株式会社Ihi アレイアンテナ式のｃｖｄプラズマ装置及びアレイアンテナユニット
WO2013030953A1 (ja) * 2011-08-30 2013-03-07 株式会社イー・エム・ディー プラズマ処理装置用アンテナ及び該アンテナを用いたプラズマ処理装置
CN102560439A (zh) * 2012-03-29 2012-07-11 雅视光学有限公司 等离子体表面处理方法及装置
CN103060778B (zh) * 2013-01-23 2015-03-11 深圳市劲拓自动化设备股份有限公司 平板式pecvd装置
JP6373707B2 (ja) * 2014-09-30 2018-08-15 株式会社Ｓｃｒｅｅｎホールディングス プラズマ処理装置
KR101847530B1 (ko) 2016-10-31 2018-04-10 (주)울텍 플라즈마 프로세싱 장치
US11646182B2 (en) * 2019-12-18 2023-05-09 Jiangsu Favored Nanotechnology Co., Ltd. Coating apparatus and coating method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08333684A (ja) * 1995-04-03 1996-12-17 Canon Inc 堆積膜の形成方法
JP2003297275A (ja) * 2002-04-05 2003-10-17 Hitachi High-Technologies Corp イオンビームミリング方法およびイオンビームミリング装置
JP2004339570A (ja) * 2003-05-15 2004-12-02 Sony Corp プラズマｃｖｄ装置及びこれを用いた成膜方法
JP2006169562A (ja) * 2004-12-14 2006-06-29 Shinko Seiki Co Ltd 表面処理装置
JP2007123008A (ja) * 2005-10-27 2007-05-17 Nissin Electric Co Ltd プラズマ生成方法及び装置並びにプラズマ処理装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1223074B (it) * 1986-11-19 1990-09-12 Martin Processing Co Inc Parabrezza di sicurezza e metodo per fabbricarlo
JPS63134052A (ja) * 1986-11-25 1988-06-06 Kuraray Co Ltd シ−ト状物のプラズマ処理装置
DE4117332C2 (de) * 1991-05-31 1995-11-23 Ivanovskij Ni Skij Eksperiment Verfahren zur Behandlung von laufendem Substrat mit Hilfe eines elektrischen Entladungsplasmas und Vorrichtung zu dessen Durchführung
TW422775B (en) * 1996-04-18 2001-02-21 Ga Tek Corp Adhesiveless flexible laminate and process for making adhesiveless flexible laminate
JP2001115265A (ja) * 1999-10-14 2001-04-24 Canon Inc 高周波プラズマｃｖｄ法および高周波プラズマｃｖｄ装置
JP3897582B2 (ja) * 2000-12-12 2007-03-28 キヤノン株式会社 真空処理方法、真空処理装置、半導体装置の製造方法および半導体装置
JP2004228354A (ja) * 2003-01-23 2004-08-12 Japan Science & Technology Agency プラズマ生成装置
JP4425167B2 (ja) * 2005-03-22 2010-03-03 富士フイルム株式会社 ガスバリア性フィルム、基材フィルムおよび有機エレクトロルミネッセンス素子

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08333684A (ja) * 1995-04-03 1996-12-17 Canon Inc 堆積膜の形成方法
JP2003297275A (ja) * 2002-04-05 2003-10-17 Hitachi High-Technologies Corp イオンビームミリング方法およびイオンビームミリング装置
JP2004339570A (ja) * 2003-05-15 2004-12-02 Sony Corp プラズマｃｖｄ装置及びこれを用いた成膜方法
JP2006169562A (ja) * 2004-12-14 2006-06-29 Shinko Seiki Co Ltd 表面処理装置
JP2007123008A (ja) * 2005-10-27 2007-05-17 Nissin Electric Co Ltd プラズマ生成方法及び装置並びにプラズマ処理装置

Also Published As

Publication number Publication date
CN101855947B (zh) 2012-09-05
KR20100096068A (ko) 2010-09-01
TWI450644B (zh) 2014-08-21
JP2009123513A (ja) 2009-06-04
TW200939904A (en) 2009-09-16
CN101855947A (zh) 2010-10-06
JP5138342B2 (ja) 2013-02-06
KR101542270B1 (ko) 2015-08-06

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