WO2008153013A1 - マイクロ波プラズマ処理装置およびマイクロ波プラズマ処理方法、ならびにマイクロ波透過板 - Google Patents
マイクロ波プラズマ処理装置およびマイクロ波プラズマ処理方法、ならびにマイクロ波透過板 Download PDFInfo
- Publication number
- WO2008153013A1 WO2008153013A1 PCT/JP2008/060587 JP2008060587W WO2008153013A1 WO 2008153013 A1 WO2008153013 A1 WO 2008153013A1 JP 2008060587 W JP2008060587 W JP 2008060587W WO 2008153013 A1 WO2008153013 A1 WO 2008153013A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- micro wave
- plasma processing
- transmitting plate
- wave plasma
- processing device
- Prior art date
Links
- 238000003672 processing method Methods 0.000 title 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32238—Windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
- H01L21/02326—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen into a nitride layer, e.g. changing SiN to SiON
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/3115—Doping the insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
- H01L21/3144—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers on silicon
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Formation Of Insulating Films (AREA)
- Arc Welding In General (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/664,191 US20100240225A1 (en) | 2007-06-14 | 2008-06-10 | Microwave plasma processing apparatus, microwave plasma processing method, and microwave-transmissive plate |
CN2008800201126A CN101681833B (zh) | 2007-06-14 | 2008-06-10 | 微波等离子体处理装置和微波等离子体处理方法以及微波透过板 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007157985A JP5096047B2 (ja) | 2007-06-14 | 2007-06-14 | マイクロ波プラズマ処理装置およびマイクロ波透過板 |
JP2007-157985 | 2007-06-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008153013A1 true WO2008153013A1 (ja) | 2008-12-18 |
Family
ID=40129618
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/060587 WO2008153013A1 (ja) | 2007-06-14 | 2008-06-10 | マイクロ波プラズマ処理装置およびマイクロ波プラズマ処理方法、ならびにマイクロ波透過板 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20100240225A1 (ja) |
JP (1) | JP5096047B2 (ja) |
KR (1) | KR20100019469A (ja) |
CN (1) | CN101681833B (ja) |
WO (1) | WO2008153013A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013239415A (ja) * | 2012-05-17 | 2013-11-28 | Shimadzu Corp | プラズマ発生ユニット及び表面波励起プラズマ処理装置 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013069739A1 (ja) * | 2011-11-11 | 2013-05-16 | 東京エレクトロン株式会社 | プラズマ処理装置用誘電体窓、およびプラズマ処理装置 |
CN111211074B (zh) * | 2013-04-30 | 2023-09-22 | 应用材料公司 | 具有空间分布的气体通道的气流控制衬垫 |
JP6383674B2 (ja) * | 2014-02-19 | 2018-08-29 | 東京エレクトロン株式会社 | 基板処理装置 |
US10039157B2 (en) * | 2014-06-02 | 2018-07-31 | Applied Materials, Inc. | Workpiece processing chamber having a rotary microwave plasma source |
US10269541B2 (en) | 2014-06-02 | 2019-04-23 | Applied Materials, Inc. | Workpiece processing chamber having a thermal controlled microwave window |
US9947516B2 (en) | 2014-06-03 | 2018-04-17 | Tokyo Electron Limited | Top dielectric quartz plate and slot antenna concept |
WO2016098582A1 (ja) * | 2014-12-15 | 2016-06-23 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US10431427B2 (en) | 2017-05-26 | 2019-10-01 | Applied Materials, Inc. | Monopole antenna array source with phase shifted zones for semiconductor process equipment |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005150637A (ja) * | 2003-11-19 | 2005-06-09 | Canon Inc | 処理方法及び装置 |
JP2006040638A (ja) * | 2004-07-23 | 2006-02-09 | Tokyo Electron Ltd | プラズマ処理装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4974318B2 (ja) * | 2001-08-17 | 2012-07-11 | 株式会社アルバック | マイクロ波プラズマ処理装置および処理方法 |
TWI235433B (en) * | 2002-07-17 | 2005-07-01 | Tokyo Electron Ltd | Oxide film forming method, oxide film forming apparatus and electronic device material |
JP4563729B2 (ja) * | 2003-09-04 | 2010-10-13 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP4149427B2 (ja) * | 2004-10-07 | 2008-09-10 | 東京エレクトロン株式会社 | マイクロ波プラズマ処理装置 |
KR101176061B1 (ko) * | 2007-08-28 | 2012-08-24 | 도쿄엘렉트론가부시키가이샤 | 천판 및 플라즈마 처리 장치 |
-
2007
- 2007-06-14 JP JP2007157985A patent/JP5096047B2/ja not_active Expired - Fee Related
-
2008
- 2008-06-10 US US12/664,191 patent/US20100240225A1/en not_active Abandoned
- 2008-06-10 CN CN2008800201126A patent/CN101681833B/zh not_active Expired - Fee Related
- 2008-06-10 KR KR1020097024919A patent/KR20100019469A/ko active IP Right Grant
- 2008-06-10 WO PCT/JP2008/060587 patent/WO2008153013A1/ja active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005150637A (ja) * | 2003-11-19 | 2005-06-09 | Canon Inc | 処理方法及び装置 |
JP2006040638A (ja) * | 2004-07-23 | 2006-02-09 | Tokyo Electron Ltd | プラズマ処理装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013239415A (ja) * | 2012-05-17 | 2013-11-28 | Shimadzu Corp | プラズマ発生ユニット及び表面波励起プラズマ処理装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2008311438A (ja) | 2008-12-25 |
KR20100019469A (ko) | 2010-02-18 |
CN101681833B (zh) | 2011-06-22 |
CN101681833A (zh) | 2010-03-24 |
US20100240225A1 (en) | 2010-09-23 |
JP5096047B2 (ja) | 2012-12-12 |
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