TW200939904A - Plasma processing device - Google Patents

Abstract

Disclosed is a plasma treatment device that can efficiently use the plasma generated. Plasma treatment device (10) comprises vacuum chamber (11), antenna (plasma-generating means) support part (12) furnished to project into internal space (111) of vacuum chamber (11), and high-frequency antenna (plasma-generating means) (13) attached to antenna support part (12). The area to which the high-frequency antenna is attached is thereby smaller and the plasma usage efficiency improved.

Description

200939904 IX. Description of the Invention: [Technical Field] The present invention relates to a plasma processing apparatus which generates electropolymerization in a vacuum vessel in the vicinity of a substrate to be processed, and then uses the electricity to deposit the substrate to be processed. Processing or etching treatment, and the like. [Prior Art] The t slurry processing apparatus is widely used for stacking processing, money etching processing, and washing processing. For example, electrolysis is carried out from a gas containing nitrogen and a film of nitrogen oxide is deposited on a glass substrate, whereby a substrate used for a liquid crystal display or a solar cell is obtained. Here, the nitride film has a function as a passivation film for preventing diffusion of impurities from the glass. Further, when a liquid crystal display or a solar cell is produced using such a substrate, the entire surface or a part thereof is subjected to an etching treatment or a cleaning treatment, and thereafter, the substrate to which the plasma treatment is applied (in the above-described example, a glass substrate) is referred to as The substrate is processed. & In recent years, there has been a tendency for the substrate to be processed to become large, or even if the size of the substrate to be processed is as conventional, the number of substrates to be processed is increased at the same time, and the electric processing device is oriented toward large-scale development. . Among them, in the case of processing a large-sized substrate to be processed, in the whole case, in the case of processing a plurality of relatively small-sized substrates to be processed, it is necessary to uniformly generate plasma for all of them. {Column> The quality of the film thickness of the film formed on the glass substrate or the like must be within a limited range. Thus, although the plasma generation region becomes large, the variation of the density of the plasma generated in the plasma processing apparatus is required to be within a fixed range.

2285-10123-PF 200939904 In the electric power treatment device, there are ECR (electron cyclotron resonance) plasma method, microwave plasma method, inductively coupled plasma method, and capacitive coupling method. Wherein, the inductively coupled plasma processing device introduces gas into the interior of the vacuum vessel and causes the high-frequency current to flow to the high-frequency antenna (induction coil), thereby accelerating the electrons in the interior of the vacuum vessel with the induced induced electric field. The electrons collide with the gas molecules, thereby ionizing the gas molecules to produce a plasma. For example, Patent Document 1 describes an inductively coupled plasma processing apparatus in which one spiral wire is placed on the zenith on the outer side of the vacuum vessel. However, in the plasma processing apparatus described in Patent Document 1, when the diaphragm is enlarged in size with the plasma generation region, the spiral coil is only enlarged, because the difference in plasma density between the center portion and the peripheral portion is only Simply amplifying 'therefore, the criterion for the uniformity of the entire plasma generation region as described above cannot be satisfied. In addition, when the antenna is made large, the conductor of the antenna becomes long. Therefore, the "standing wave is formed in the antenna" and the intensity distribution of the high-frequency current becomes uneven. As a result, the plasma density distribution may become uneven (see Patent Document 1). In Patent Document 2 and Non-Patent Document 1, a multi-antenna type inductively coupled plasma processing apparatus in which a plurality of high-frequency antennas are attached to the inner wall of a vacuum container is described. According to the device, the distribution of the plasma in the vacuum vessel can be controlled by appropriately setting the configuration of the plurality of antennas. Further, since the length of the conductor of each antenna can be shortened, it is possible to prevent the adverse effect caused by the standing wave. For these reasons, the plasma processing apparatus described in Patent Document 2 and Non-Patent Document 1 can produce plasma having higher uniformity than conventional ones. [Patent Document 1] JP-A-2000- 058297 ([0026] to [0027], 丨图)

2285-10123-PF 6 200939904 [Patent Document 2] JP-A-2001 No. 2001-035697 ([〇〇5〇], 11th image) [Non-Patent Document 1] Section Yukiyuki's large-scale treatment of 'r generations of meters Using a plasma source", Journal 〇f Plasma and Fusi〇n

Research, Vol. 81, No. 2, pp. 85-93, issued in February, 2005. [Problems to be Solved by the Invention] The electropolymerization processing device described in Patent Document 2 and Non-Patent Document i is used. The uniformity of the plasma density in the vacuum vessel is increased. However, the device is moved to the inner wall on which the antenna is mounted because about half of the generated electric power is not located on the true side of the container, and the household is treated with the plasma. Further, in the electric t-device for forming a film to be processed, about half of the base atomic groups (membrane precursors) generated by the plasma adhere to the inner wall of the true* container to become particles, which are dropped. : Two ® m m 々 联 & 品质 品质 品质 。 Reason for deterioration. It is necessary to periodically reduce the operation rate of the inside of the vacuum container. Also, because of the need for a large main gas, the operating cost increases. Use-Responsible Cleaning The problem to be solved by the present invention is to provide an electro-polymerization treatment apparatus which has high utilization efficiency of plasma and can suppress running costs. [Means for Solving the Problem] The device developed to solve the above problems is characterized in that it includes: a burst processing device a) a vacuum container;

2285-10123-PF 7 200939904 b) the plasma generating means support portion ' is arranged to protrude into the inner space of the vacuum container; and c) one or a plurality of plasma generating means are attached to the plasma generating means Support department. The electropolymerization means generates electricity by ionizing gas molecules in the vacuum vessel. Various types of plasma generating means can be used, and as a representative example thereof, a high frequency antenna can be cited. Further, a person who installs a slit in a microwave waveguide or a high-frequency electrode can also be used as a plasma generating means. In the present invention, the "electro-convergence generating means supporting portion provided to protrude into the internal space of the vacuum container" also includes a vertical (horizontal) internal space. In the plasma processing apparatus of the present invention, a plurality of the plasma generating means can be radially arranged from the plasma generating means supporting portion to the wall surface of the vacuum container. For example, the plasma generating means employs a high-frequency antenna which can be used on the side of the cylindrical plasma generating means support portion or the surface of the spherical plasma generating means supporting portion from the wall surface facing the vacuum container (the outer side of the cylinder or the ball) Set a plurality of high frequency antennas. The plasma processing apparatus of the present invention may include a substrate holding portion that holds a plurality of substrates to be processed to surround the plasma generating means supporting portion. The base holding portion includes a revolution portion that rotates the substrate to be processed around the plasma generation means support portion, and/or a rotation portion that rotates the substrate to be processed. Further, the base holding portion may include a film-like base holding portion that holds the film-like substrate such that the film-like substrate surrounds the plasma generating means supporting portion. In this case, it may further comprise: a delivery portion, the strip-shaped film

2285-10123-PF 200939904 The matrix is sequentially fed to the film-form substrate holding portion; and the take-in portion is sequentially taken into the film-form substrate from the film-form substrate holding portion. [Effect of the Invention] In the plasma processing apparatus of the present invention, the plasma generating means is attached to the plasma generating means supporting portion which is provided to protrude into the internal space of the vacuum container. Since the surface area of the plasma generating means supporting portion is generally smaller than the surface of the inner wall of the vacuum container, it is installed in comparison with the case where the plasma processing apparatus of the patent document 2 and the non-patent document i are attached to the inner wall of the vacuum container. The total area of the portion of the plasma generating means is smaller. Therefore, the utilization efficiency of the plasma is improved, and the slurry adhering to the inner wall of the vacuum vessel can be reduced in the plasma CVD apparatus. As a result, the frequency of cleaning the inner wall can be reduced, the operation rate of the apparatus can be improved, and the running cost can be suppressed. In the case where the plasma processing apparatus of the present invention has a revolving portion, by rotating the periphery of the substrate to be processed around the plasma generating means support portion in the plasma processing, all of the substrates to be processed can be electrically operated under the same conditions. Slurry treatment. In the case where the plasma processing apparatus of the present invention has a self-rotating portion, the surface of each substrate to be processed can be subjected to plasma treatment in the same manner by rotating the substrate to be processed. The surface of the thin flag-shaped substrate can be appropriately subjected to electropolymerization treatment by providing the film-form substrate holding portion to the plasma processing apparatus 'of the present invention. In particular, the film-form substrate is sequentially sent to and taken out from the region where the plasma is generated by the delivery portion and the take-in portion, whereby the plasma treatment can be performed over a large area. [Embodiment] 2285-10123-PF 9 200939904 Embodiment 1 of the plasma processing apparatus of the present invention will be described with reference to Figs. 1 to 4 [First Embodiment] The plasma processing apparatus 10 of the first embodiment is used for A device for performing plasma treatment on the surface of the rod-shaped substrate 21 to be processed. The plasma processing apparatus 10 of the present embodiment has a vacuum container u as in the prior art, and as shown in the first drawing, is disposed so as to protrude from the vicinity of the center of the upper wall surface of the vacuum container 11 toward the inside space U1 of the vacuum container u. A cylindrical antenna (plasma generating means) support portion 12. On the outer peripheral surface of the antenna supporting portion 12, four rows of four high-frequency antennas 13 are provided at equal intervals in the longitudinal direction of the cylinder and four of them are equally spaced along the circumference. Each of the high-frequency antennas 13 bends the linear conductor into a U shape. Each of the high frequency antennas 13 and the power source 14 are connected in parallel, and the work impedance integrator 15 is disposed between all of the high frequency antennas 3 and the power supply port 4. The inside of the antenna supporting portion 12 is hollow, and wiring for connecting the above-described high frequency antenna 13 and the power source 14 is provided in the cavity. The cavity 天线 of the antenna supporting portion 12 may be connected to the vacuum container 11 or vice versa. The base holding portion 16 is provided at the bottom of the vacuum container n. The base holding portion 16 has a disk-shaped revolving portion 161 that is placed on a column 163 that is erected on the bottom surface of the vacuum vessel 11 and that rotates around the column 163. The two rotation portions 162' are equally spaced (second The figure is disposed around the upper surface of the revolution portion 161 and is constituted by a circular plate rotatable around the center.

Further, in the present plasma processing apparatus 10, a vacuum pump for exhausting the internal space m or a gas introduction port for introducing the plasma material gas or the like is provided. The operation of the plasma device of the present embodiment will be described. First, in the state of 2285-10123-PF 10 200939904 = the rod-shaped substrate 2i to be processed is fixed. After the internal space is exhausted by a vacuum pump, the plasma raw material gas is introduced from the carcass introduction port. Then, while the revolution is turned white, the high-frequency electric power is introduced from the power source U to the high-frequency antenna 13 on the second side of the unit y, and the high-frequency electromagnetic field is generated in the barntor 11. By using the high-frequency electromagnetic field, the molecules of the electric material gas are ionized to be in an electropolymerized state, and the surface of the substrate to be treated 21 is subjected to electro-deposition processing such as engraving or stacking treatment using the plasma. The plasma processing apparatus 10 is empty to the inside of the vacuum vessel 11. In the case where the antenna support portion 12 is provided to be small, the area of the mounting antenna can be made relatively small. Therefore, compared with the case where the high-frequency antenna 13 is attached to the wall surface of the vacuum container 11, the electric power to the mounting surface side can be further suppressed. Loss of pulp. Further, in the plasma processing apparatus 10 of the present embodiment, since the substrate to be processed 21 is revolved around the antenna supporting portion 12 by the revolution cymbal 161, the entire processed substrate 21 can be plasma-treated under the same conditions. deal with. Further, in the electropolymerization apparatus 1 of the present embodiment, since the substrate to be processed 21 is rotated by the rotation portion (10), the surface of each of the substrates 21 to be processed can be subjected to plasma treatment in the same manner. A conventional plasma processing apparatus described in Patent Document 2 and Non-Patent Document. A plurality of high frequency antennas are dispersedly disposed on the wall surface of the vacuum vessel. Therefore, when a plurality of high-frequency antennas are connected to a small number of high-frequency power sources or impedance integrators, wiring becomes long, and power loss during power supply becomes large, and in order to suppress this power loss, a plurality of high-frequency power sources or Impedance integrator

2285-10123-PF 11 200939904 The problem of increased costs. In the plasma processing apparatus of the present embodiment, since the high-frequency antenna 13 is collectively disposed in the antenna supporting portion 12, the wiring is shorter than the conventional one, and both power loss and cost can be suppressed. m

Further, in the present embodiment, although the antenna supporting portion 12 is a cylindrical member, other shapes such as a quadrangular prism may be used. The number of antenna support units (four) may be only one as shown in this embodiment, or may be plural. In order to reduce the area of the portion where the high-frequency antenna 13 is mounted and the loss when power is supplied to the high-frequency antenna, the number of the antenna support portions 12 can be reduced (preferably only one). The high frequency antenna 13 is configured. Further, the position of the antenna supporting portion 12 can be appropriately changed. The number of the high-frequency antennas 13 can be appropriately changed according to the magnitude or uniformity of the required density of the electropolymer. These items are the same for the other embodiments described below. [Second Embodiment] The electropolymerization apparatus 30 of the second embodiment will be described using a top view shown in Fig. 3. The fourth embodiment of the present invention is a device for performing an operation of carrying out the plasma processing from the vacuum container 31 after performing the plasma treatment by moving the flat substrate-processed substrate 22 into the internal space 311 of the vacuum container 31. The plasma processing apparatus 30 of the present embodiment has an octagonal cylindrical vacuum container 31, and i hexagonal column-shaped antennas are provided so as to protrude from the vicinity of the center of the upper wall surface toward the inner space 311 of the vacuum vessel 31 (plasma) The means of generating) the support unit 32. A plurality of high frequency antennas (plasma generating means) 33 are provided on each side surface of the hexagonal column of the antenna supporting portion 32 so as to be arranged in a line in the vertical direction. Each of the high-frequency antennas 33 is a U-shaped antenna, and the bottom portion of the u-shape is radially arranged toward the wall surface side of the vacuum container 31.

2285-10123-PF 12 200939904 is mounted on the antenna support unit 32. Further, all of the high-frequency antennas 33 are connected in parallel via a power amplifier and a power source (not shown). On one of the side walls of the eight faces of the vacuum vessel 31, a loading lock chamber 38 is provided. The loading lock chamber 38 is provided with a vacuum container side loading and unloading port 381 for carrying out the loading and unloading of the substrate 22 to be processed between the inner space 311 and the outer side, and the outer side is carried out to p 382 for use in The substrate to be processed 22 is carried out and carried in between the outside, and the inside thereof can be exhausted independently of the internal space @311 of the vacuum vessel 31. In the internal space 311, a substrate carrying device (not shown) for winding the substrate to be processed 22 loaded from the loading lock chamber 38 along the side wall is provided. Wait. Further, as in the first embodiment, a vacuum pump or a gas introduction port is provided to explain the operation of the electric paddle processing apparatus 3 of the present embodiment. In the same manner as in the first embodiment, the slurry is generated in the internal space 31, and then the substrate 22 to be processed is sequentially carried into the internal space from the outside via the loading lock chamber 38, and is then wound around the inside at a predetermined time by the substrate carrying device. Space 3 ιι one week, for plasma treatment. The substrate 22 to be processed that has reached the top of the loading tray is lifted out from the ergonomic side loading and unloading port 38i to the purple sentence loading lock chamber 38, and after the door of the real-side loading and unloading port 381 is closed, the work is smashed. The outside side carries out the inlet 382 and carries it out to the outside. Then, the next processed 丞渡22 is moved into the loading lock palace 38' and moved in accordance with the procedure just now, and the office is operated. In this manner, the plurality of substrates to be processed 22 are continuously smashed, and the plasma processing is performed in a flying manner. Since the plasma processing of the present embodiment is in the state of the internal space 311, the state of the plasma is generated to carry out the loading/unloading of the substrate 22. Therefore, 2285-10123~PF^13 200939904 will not The plasma treatment is interrupted, and a plurality of substrates to be processed can be processed efficiently and continuously. Further, all of the substrates 22 to be processed can be subjected to plasma treatment under the same conditions. [Third embodiment] A plasma processing apparatus 40 according to a third embodiment will be described using a top view shown in Fig. 4. The plasma processing apparatus 4 of the present embodiment is a device for performing plasma treatment on the surface of the film-form substrate to be processed 23 composed of a strip-shaped film.

The plasma processing apparatus 40 of the present embodiment has a rectangular parallelepiped vacuum container 41, and is provided with a hexagonal columnar antenna so as to protrude from the vicinity of the center of the upper wall surface toward the inner space 411 of the vacuum vessel 41 (plasma generation = Segment) support unit 42. Further, similarly to the plasma processing apparatus 3A of the second embodiment, the antenna support portion 42 is provided with the radio-frequency antenna 43, and is connected in parallel via a single power amplifier to one power source (not shown). The film-shaped base holding portion 46 is disposed to surround the antenna support portion 42. The film-like base holding portion 46 has a cylindrical large roller which is parallel to the antenna supporting portion 42, and a cylindrical small roller which is parallel to the antenna branch (4) u and smaller in diameter than the large roller 461. The antenna supports 胄42 60. A total of six large rolls 461 are arranged at intervals. A total of twelve small rolls 462 of each pair are disposed on the outer circumference of each of the large rolls 461. Further, a delivery portion 471 and an intake portion 472 composed of a cylindrical shape (four) are provided in parallel with the side of the adjacent two large rollers 461 and the antenna support portion 42. Further, as in the first and second embodiments, a vacuum pump or a gas introduction port or the like is provided.

2285-10123-PF 14 200939904 The operation of the plasma processing apparatus 40 will be described. First, the film-form substrate to be processed 23 wound around the delivery portion 471 is attached to the film-form substrate holding portion 46 and the take-in portion 472 as follows. First, the first small roller 462A adjacent to the delivery portion 471, the i-th large roller 46U adjacent to the first small roller 462a, and the second small roller adjacent to the first large roller 461A and the first small roller 462A. 4626, ..., and the 12th small roller 462L adjacent to the take-in portion 472 are placed in a sequence. Then, the end of the film-formed substrate 23 is fixed to the take-in portion 472. Then, the air of the internal space 41 i is removed by a vacuum pump, and the plasma raw material gas is introduced from the gas introduction port, and a high-frequency alternating current is introduced from the power source to the high-frequency antenna 43 , whereby plasma is generated in the internal space 41 . At the same time, the film-shaped substrate to be processed is taken in from the delivery portion 471 via the film-like substrate holding portion 46 by the take-in portion 472 by rotating the roller of the take-in portion 472. During this period, the surface (treated surface) of one of the film-formed substrates 23 is exposed to the plasma, and thus plasma treatment such as etching or deposition is applied to the surface to be treated. According to the plasma processing apparatus of the third embodiment, the plasma treatment can be performed on the entire surface of the surface to be processed. At that time, since the film-shaped substrate to be processed is moved in order, the treatment on the surface of the film-form substrate 23 can be performed uniformly. Further, since the high-frequency antenna 43 is surrounded by the film-formed substrate 23, the generated plasma is also surrounded by the film-formed substrate 23, and as a result, the plasma can be used for the film-formed substrate 23 without waste. deal with. In the third embodiment, also and the first! Similarly to the embodiment, the shape, number, position, and the like of the antenna supporting portion 42 or the high-frequency antenna 43 can be appropriately changed.

2285-10123-PF 15 200939904 [Brief Description of the Drawings] FIG. 1 is a longitudinal cross-sectional view showing a plasma processing apparatus including a substrate holding portion including a rotation portion of a rotation portion according to the first embodiment of the present invention. Fig. 2 is a top view showing the electrician handling of the i-th embodiment. Fig. 3 is a top plan view showing an electropolymerization processing apparatus 30 having a loading lock chamber 38 and a substrate carrying device according to a second embodiment of the present invention.髻 The first embodiment is a top view of the plasma processing apparatus 40 having the film-form substrate holding portion according to the third embodiment of the present invention. [Description of main component symbols] 10 Plasma processing apparatus 11'31, 41 of the first embodiment, vacuum vessel 111' 311, 411 internal space 12 32 42 Antenna support section (plasma generation means support section) 13, 33, 43 high Frequency antenna (plasma generation means) ❹ 14 power supply 15 impedance integrator 16 base holding portion 161 revolution portion 16 2 rotation portion 163 pillar 21 processed substrate 23 film-shaped processed substrate 30 plasma processing device of the second embodiment

2285-10123-PF 16 200939904 38 Loading lock chamber 3 81 Vacuum container side loading and unloading port 382 External side loading and unloading port 40 Plasma processing apparatus of the third embodiment 46 Film-shaped substrate holding portion 461 Large roller 462 Small roller 471 Delivery portion

472 take-in department

17

2285-10123-PF

Claims (1)

200939904 X. Patent application scope: A plasma processing device, characterized in that it comprises a) a vacuum container; b) a plasma generating means supports a protruding portion in a space; and is arranged to be mounted to the internal portion of the vacuum container The plasma produces c) one or a plurality of plasma generating means means support means. 2. If you apply for a patent. The plasma processing apparatus of the item, wherein the mass generating means is a high frequency antenna. The plasma processing device of the patent scope 1 < 2, wherein the hand and the slave are supported by the electrician. A plurality of the plasma generating means are disposed radially on the wall surface of the vacuum vessel. The plasma processing apparatus of claim 1 or 2, further comprising a substrate holding portion that holds the plurality of substrates to be processed so as to surround the electron generating means supporting portion. 5. The plasma processing apparatus of claim 4, wherein the substrate holding portion includes a revolving portion that rotates the substrate to be processed around the plasma generating hand support portion. 6. The plasma processing apparatus of claim 4, wherein the substrate holding portion includes a rotation portion that rotates the substrate to be processed. 7. The plasma processing apparatus according to claim 1 or 2, further comprising a film-form substrate holding portion which surrounds the electric production means supporting portion with a thin film-like substrate to protect the (four) thin medium substrate. 8. The plasma processing apparatus of claim 7, wherein the package 2285-10123-PF 18 200939904 comprises: a delivery portion for sequentially feeding the strip-shaped film-like substrate to the film-form substrate holding portion; And the take-in portion, the film-form substrate is sequentially taken in from the film-form substrate holding portion. 9. The plasma processing apparatus of claim 1 or 2, wherein the loading lock chamber is adapted to carry in/out the substrate to be processed between the vacuum container and the outside of the vacuum container. 〇 2285-10123-PF 19