WO2009057665A1 - 薄膜能動素子群、薄膜能動素子アレイ、有機発光装置、表示装置および薄膜能動素子群の製造方法 - Google Patents
薄膜能動素子群、薄膜能動素子アレイ、有機発光装置、表示装置および薄膜能動素子群の製造方法 Download PDFInfo
- Publication number
- WO2009057665A1 WO2009057665A1 PCT/JP2008/069697 JP2008069697W WO2009057665A1 WO 2009057665 A1 WO2009057665 A1 WO 2009057665A1 JP 2008069697 W JP2008069697 W JP 2008069697W WO 2009057665 A1 WO2009057665 A1 WO 2009057665A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- active element
- thin film
- film active
- element group
- light emitting
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/740,287 US8344390B2 (en) | 2007-10-31 | 2008-10-29 | Thin film active element group, thin film active element array, organic light emitting device, display apparatus, and thin film active element manufacturing method |
CN200880113516.XA CN101842904B (zh) | 2007-10-31 | 2008-10-29 | 薄膜有源元件组,薄膜有源元件阵列,有机发光装置,显示装置及薄膜有源元件组的制造方法 |
EP08845687A EP2207208A4 (en) | 2007-10-31 | 2008-10-29 | ACTIVE THIN FILM ELEMENT GROUP, ACTIVE THIN FILM ELEMENT ARRAY, ORGANIC LIGHT ARRANGEMENT, DISPLAY ARRANGEMENT AND METHOD FOR PRODUCING AN ACTIVE THIN FILM ELEMENT GROUP |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007283111 | 2007-10-31 | ||
JP2007-283111 | 2007-10-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009057665A1 true WO2009057665A1 (ja) | 2009-05-07 |
Family
ID=40591052
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/069697 WO2009057665A1 (ja) | 2007-10-31 | 2008-10-29 | 薄膜能動素子群、薄膜能動素子アレイ、有機発光装置、表示装置および薄膜能動素子群の製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8344390B2 (ko) |
EP (1) | EP2207208A4 (ko) |
JP (1) | JP5612258B2 (ko) |
KR (1) | KR20100087077A (ko) |
CN (1) | CN101842904B (ko) |
TW (1) | TWI466350B (ko) |
WO (1) | WO2009057665A1 (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4552160B2 (ja) | 2008-07-30 | 2010-09-29 | ソニー株式会社 | 有機半導体薄膜の形成方法および薄膜半導体装置の製造方法 |
KR102581069B1 (ko) * | 2010-02-05 | 2023-09-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 반도체 장치의 제조 방법 |
TWI487111B (zh) * | 2012-05-21 | 2015-06-01 | Au Optronics Corp | 電晶體結構以及驅動電路結構 |
JP6243821B2 (ja) * | 2014-09-25 | 2017-12-06 | 富士フイルム株式会社 | トランジスタ、トランジスタアレイ、および、トランジスタの製造方法 |
CN105428370B (zh) * | 2015-11-10 | 2018-09-04 | 深圳市华星光电技术有限公司 | 液晶显示面板及液晶显示装置 |
KR101872421B1 (ko) * | 2016-04-12 | 2018-06-28 | 충북대학교 산학협력단 | 산화물 반도체 기반의 트랜지스터 및 그 제조 방법 |
CN107579101A (zh) * | 2017-08-30 | 2018-01-12 | 京东方科技集团股份有限公司 | 一种显示基板及其制作方法、显示装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003007720A (ja) * | 2001-06-21 | 2003-01-10 | Matsushita Electric Ind Co Ltd | 多結晶薄膜、薄膜トランジスタアレイ、画像表示装置およびそれらの製造方法 |
JP2005182061A (ja) * | 2003-12-22 | 2005-07-07 | Lg Phillips Lcd Co Ltd | 有機電界発光素子とその製造方法 |
JP2006133762A (ja) * | 2004-10-08 | 2006-05-25 | Semiconductor Energy Lab Co Ltd | 表示装置の作製方法 |
WO2006117907A1 (ja) * | 2005-04-28 | 2006-11-09 | Sharp Kabushiki Kaisha | 半導体素子及び回路基板の製造方法、並びに、半導体素子及び回路基板 |
JP2007150031A (ja) | 2005-11-29 | 2007-06-14 | Toppan Printing Co Ltd | 薄膜トランジスタ及びその製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6661180B2 (en) * | 2001-03-22 | 2003-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, driving method for the same and electronic apparatus |
JP4155389B2 (ja) * | 2001-03-22 | 2008-09-24 | 株式会社半導体エネルギー研究所 | 発光装置、その駆動方法及び電子機器 |
KR100544117B1 (ko) * | 2003-05-01 | 2006-01-23 | 삼성에스디아이 주식회사 | 박막 트랜지스터를 구비한 평판표시장치 |
US7105855B2 (en) * | 2004-09-20 | 2006-09-12 | Eastman Kodak Company | Providing driving current arrangement for OLED device |
US7470604B2 (en) * | 2004-10-08 | 2008-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
JP2008042043A (ja) * | 2006-08-09 | 2008-02-21 | Hitachi Ltd | 表示装置 |
-
2008
- 2008-10-29 CN CN200880113516.XA patent/CN101842904B/zh not_active Expired - Fee Related
- 2008-10-29 JP JP2008278938A patent/JP5612258B2/ja active Active
- 2008-10-29 WO PCT/JP2008/069697 patent/WO2009057665A1/ja active Application Filing
- 2008-10-29 KR KR1020107006029A patent/KR20100087077A/ko not_active Application Discontinuation
- 2008-10-29 US US12/740,287 patent/US8344390B2/en active Active
- 2008-10-29 EP EP08845687A patent/EP2207208A4/en not_active Withdrawn
- 2008-10-31 TW TW097142067A patent/TWI466350B/zh not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003007720A (ja) * | 2001-06-21 | 2003-01-10 | Matsushita Electric Ind Co Ltd | 多結晶薄膜、薄膜トランジスタアレイ、画像表示装置およびそれらの製造方法 |
JP2005182061A (ja) * | 2003-12-22 | 2005-07-07 | Lg Phillips Lcd Co Ltd | 有機電界発光素子とその製造方法 |
JP2006133762A (ja) * | 2004-10-08 | 2006-05-25 | Semiconductor Energy Lab Co Ltd | 表示装置の作製方法 |
WO2006117907A1 (ja) * | 2005-04-28 | 2006-11-09 | Sharp Kabushiki Kaisha | 半導体素子及び回路基板の製造方法、並びに、半導体素子及び回路基板 |
JP2007150031A (ja) | 2005-11-29 | 2007-06-14 | Toppan Printing Co Ltd | 薄膜トランジスタ及びその製造方法 |
Non-Patent Citations (1)
Title |
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See also references of EP2207208A4 |
Also Published As
Publication number | Publication date |
---|---|
KR20100087077A (ko) | 2010-08-03 |
US20100258803A1 (en) | 2010-10-14 |
EP2207208A4 (en) | 2012-03-28 |
US8344390B2 (en) | 2013-01-01 |
JP5612258B2 (ja) | 2014-10-22 |
JP2009135467A (ja) | 2009-06-18 |
TW200931700A (en) | 2009-07-16 |
EP2207208A1 (en) | 2010-07-14 |
CN101842904A (zh) | 2010-09-22 |
CN101842904B (zh) | 2013-03-13 |
TWI466350B (zh) | 2014-12-21 |
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