WO2009057185A1 - Ｃｖｄ装置 - Google Patents

Ｃｖｄ装置 Download PDF

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Publication number
WO2009057185A1
WO2009057185A1 PCT/JP2007/070989 JP2007070989W WO2009057185A1 WO 2009057185 A1 WO2009057185 A1 WO 2009057185A1 JP 2007070989 W JP2007070989 W JP 2007070989W WO 2009057185 A1 WO2009057185 A1 WO 2009057185A1
Authority
WO
WIPO (PCT)
Prior art keywords
forming
tray
silicon
room
frequency induction
Prior art date
Application number
PCT/JP2007/070989
Other languages
English (en)
French (fr)
Inventor
Masayasu Suzuki
Original Assignee
Shimadzu Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corporation filed Critical Shimadzu Corporation
Priority to JP2009538862A priority Critical patent/JPWO2009057185A1/ja
Priority to PCT/JP2007/070989 priority patent/WO2009057185A1/ja
Publication of WO2009057185A1 publication Critical patent/WO2009057185A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0209—Pretreatment of the material to be coated by heating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

多結晶シリコンおよび単結晶シリコン太陽電池のシリコン窒化膜を形成するＣＶＤ装置であって、真空チャンバー内に、ＣＶＤによるＳｉＮ薄膜の形成によって、多結晶シリコン基板上にＳｉＮ反射膜を形成する成膜室と、この成膜室の上流側に配置する予備加熱室とを備える。加熱機構は、予備加熱室内において、搬入されたトレイと対向する位置にワークコイルを配置する。ワークコイルは、誘電体で覆った平面螺旋状とする高周波誘導加熱ヒータとする。真空チャンバー内での加熱を高周波誘導加熱ヒータによって行うことで、基板を載置するトレイを加熱して周辺部分の加熱を抑制することで熱容量を低減し、ワークコイルとトレイとの間に電界シールドを配置することによってグロー放電の発生を抑制する。これにより、基板温度を応答性よく精細に制御し、真空中において、高周波誘導加熱ヒータを用いた加熱を可能とし、基板温度を応答性よく精細に制御する。
PCT/JP2007/070989 2007-10-29 2007-10-29 Ｃｖｄ装置 WO2009057185A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009538862A JPWO2009057185A1 (ja) 2007-10-29 2007-10-29 Ｃｖｄ装置
PCT/JP2007/070989 WO2009057185A1 (ja) 2007-10-29 2007-10-29 Ｃｖｄ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/070989 WO2009057185A1 (ja) 2007-10-29 2007-10-29 Ｃｖｄ装置

Publications (1)

Publication Number Publication Date
WO2009057185A1 true WO2009057185A1 (ja) 2009-05-07

Family

ID=40590596

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/070989 WO2009057185A1 (ja) 2007-10-29 2007-10-29 Ｃｖｄ装置

Country Status (2)

Country Link
JP (1) JPWO2009057185A1 (ja)
WO (1) WO2009057185A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101363002B1 (ko) * 2011-12-30 2014-02-18 엘아이지에이디피 주식회사 플라즈마를 이용한 기판처리장치 및 기판처리방법
JP2018041732A (ja) * 2017-09-27 2018-03-15 ワイエス電子工業株式会社 プラズマ処理装置
CN110512183A (zh) * 2019-09-23 2019-11-29 苏州迈正科技有限公司 一种真空镀膜设备及对导电导磁托盘进行快速加热的方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107675141B (zh) * 2017-10-25 2023-08-04 南昌大学 一种用于制备氮化物材料的装置

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6124304A (ja) * 1984-07-12 1986-02-03 Toshiba Corp 高周波加熱装置
JPH046791A (ja) * 1990-04-24 1992-01-10 Shimon Yahav 家庭用調理器
JPH07249623A (ja) * 1994-03-11 1995-09-26 Hitachi Ltd シリコン窒化膜形成方法
JPH0892746A (ja) * 1994-09-21 1996-04-09 Mitsubishi Heavy Ind Ltd プラズマ化学蒸着方法及び装置
JPH10183353A (ja) * 1996-08-07 1998-07-14 Concept Syst Design Inc Ｃｖｄリアクタ用ガス注入システム及びガス注入方法
JPH11219907A (ja) * 1998-02-04 1999-08-10 Sony Corp ウエハ処理装置および処理方法
JP2003223979A (ja) * 2002-01-30 2003-08-08 Harison Toshiba Lighting Corp 誘導加熱ローラ装置、定着装置および画像形成装置
JP2003224114A (ja) * 2001-09-28 2003-08-08 Tokyo Electron Ltd プラズマ処理システム
JP2003231970A (ja) * 2002-02-08 2003-08-19 Hitachi Zosen Corp 基板処理装置および基板処理方法
JP2003234169A (ja) * 2002-02-08 2003-08-22 Hitachi Zosen Corp 誘導加熱装置および誘導加熱方法
JP2003306772A (ja) * 2002-04-16 2003-10-31 Tokyo Electron Ltd 処理装置および処理方法ならびに載置部材
JP2004091885A (ja) * 2002-09-02 2004-03-25 Sharp Corp 薄膜製造装置およびその装置を用いた薄膜製造方法
JP2005093858A (ja) * 2003-09-19 2005-04-07 Dainippon Screen Mfg Co Ltd 熱処理装置
JP2005150590A (ja) * 2003-11-19 2005-06-09 Matsushita Electric Ind Co Ltd 電磁波シールド
JP2006261612A (ja) * 2005-03-18 2006-09-28 Shikusuon:Kk 炭化珪素半導体およびその製造方法と製造装置

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6124304A (ja) * 1984-07-12 1986-02-03 Toshiba Corp 高周波加熱装置
JPH046791A (ja) * 1990-04-24 1992-01-10 Shimon Yahav 家庭用調理器
JPH07249623A (ja) * 1994-03-11 1995-09-26 Hitachi Ltd シリコン窒化膜形成方法
JPH0892746A (ja) * 1994-09-21 1996-04-09 Mitsubishi Heavy Ind Ltd プラズマ化学蒸着方法及び装置
JPH10183353A (ja) * 1996-08-07 1998-07-14 Concept Syst Design Inc Ｃｖｄリアクタ用ガス注入システム及びガス注入方法
JPH11219907A (ja) * 1998-02-04 1999-08-10 Sony Corp ウエハ処理装置および処理方法
JP2003224114A (ja) * 2001-09-28 2003-08-08 Tokyo Electron Ltd プラズマ処理システム
JP2003223979A (ja) * 2002-01-30 2003-08-08 Harison Toshiba Lighting Corp 誘導加熱ローラ装置、定着装置および画像形成装置
JP2003231970A (ja) * 2002-02-08 2003-08-19 Hitachi Zosen Corp 基板処理装置および基板処理方法
JP2003234169A (ja) * 2002-02-08 2003-08-22 Hitachi Zosen Corp 誘導加熱装置および誘導加熱方法
JP2003306772A (ja) * 2002-04-16 2003-10-31 Tokyo Electron Ltd 処理装置および処理方法ならびに載置部材
JP2004091885A (ja) * 2002-09-02 2004-03-25 Sharp Corp 薄膜製造装置およびその装置を用いた薄膜製造方法
JP2005093858A (ja) * 2003-09-19 2005-04-07 Dainippon Screen Mfg Co Ltd 熱処理装置
JP2005150590A (ja) * 2003-11-19 2005-06-09 Matsushita Electric Ind Co Ltd 電磁波シールド
JP2006261612A (ja) * 2005-03-18 2006-09-28 Shikusuon:Kk 炭化珪素半導体およびその製造方法と製造装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101363002B1 (ko) * 2011-12-30 2014-02-18 엘아이지에이디피 주식회사 플라즈마를 이용한 기판처리장치 및 기판처리방법
JP2018041732A (ja) * 2017-09-27 2018-03-15 ワイエス電子工業株式会社 プラズマ処理装置
CN110512183A (zh) * 2019-09-23 2019-11-29 苏州迈正科技有限公司 一种真空镀膜设备及对导电导磁托盘进行快速加热的方法

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